EE 230: Optical Fiber Communication Lecture 9 From the movie Warriors of the Net Light Sources.
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Transcript of EE 230: Optical Fiber Communication Lecture 9 From the movie Warriors of the Net Light Sources.
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EE 230: Optical Fiber Communication Lecture 9
From the movieWarriors of the Net
Light Sources
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Conditions for gain (lasing)
• E2-E1<Fc-Fv (population inversion)
• g(1/L)ln(1/R)+ (net gain)
=2nL/p, p an integer (phase coherence)
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Reflectivity
2
1
1
n
nR
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Longitudinal mode spacing
nL2
2
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Laser Diode Structure and Optical modes
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Conditions for continuous lasing (steady state)
• Net rate of change of density of conduction band electrons is zero (injection minus recombination and depletion)
• Net rate of change of density of photons created is zero (stimulated emission minus leakage and spontaneous emission)
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Laser Electrical Models
Laser Pad Capacitance
Package Lead Inductance
Package Lead Capacitance
Bond wireInductance
Laser contactresistance
Laser Junction
Assume that the light output is proportional to the current through the laser junction
Use a large signal diode model for the laserjunction, this neglects the optical resonance
Simple large signal model
(Hitachi)
More exactly the laser rate equations can be implemented in SPICE to give the correct transient behavior under large signal modulation
Small signal model
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Steady-state lasing conditions
N
NNNb
de
J
dt
dN
)(2
N
s
P
NfNNb
dt
d
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Turn-on delay
th
bNd JJ
JJt ln
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Turn-on Delay
Input Current
Output Light Signal
d
I p
b
For and applied current pulse of amplitude
the turn on delay is given by:
ln
with a bias current I applied:
ln
where is the delay at threshold (2ns
p
pd th
p th
pd th
p b th
th
I
II I
II I I
Typ.)
To reduce the turn on delay:• Use a low threshold laser and make Ip large• Bias the laser at or above threshold
Ib=0
Ib=0.9Ith
Ib=0.5Ith
Tur
n on
Del
ay (
ns)
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Relaxation oscillation
Decays as e-t/2, where
and with a freqency , where
N
b
1
thNP
thth J
JJNNb
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Modulation frequency
Difference between optical output at modulation frequency m and steady-state output is proportional to
2222
1
mmr
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Resonance Frequency
20
2 20
0
Photon Density ( ) (0)Laser Small Signal Frequency Response=
Excitation Current ( ) (0)
1 1 1f =Resonance frequency
2 22
d
thstim
p pp e
d
fs f s
i f i f f jff
where
gS gI I
f
220
=Damping frequency 2
= f =Frequency of peak response 4
g=differential gain S= photon lifetime carrier lifetime
p
d
stimth p e
S
ffp
I I1
gS
Semiconductor lasers exhibit an inherent second order response due to energy“sloshing” back-and-forthbetween excited electrons and photons
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Large Signal Transient Response
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Effects of current and temperature
• Applying a bias current has the same effect as applying a pump laser; electrons are promoted to conduction band. Fc and Fv get farther apart as well
• Increasing the temperature creates a population distribution rather than a sharp cutoff near the Fermi levels
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Fabry Perot Laser Characteristics
(Hitachi Opto Data Book)
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Quantum efficiency
• Internal quantum efficiency i, photons emitted per recombination event, determined empirically to be 0.650.05 for diode lasers
• External quantum efficiency e given by
th
thie g
g
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Total quantum efficiency
Equal to emitted optical power divided by applied electrical power, or he/qV
For GaAs lasers, TQE 50%
For InGaAsP lasers, TQE 20%
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Chirping
Current modulation causes both intensity and frequency modulation(chirp)
As the electron density changes the gain (imaginary part of refractive index ni) and the real part of the refractive index (nr) both change.
The susceptability of a laser to chirping is characterized by the alpha parameter.
n rNniN
where N is the electron density. Large implies lots of chirping.
v(t ) 4
P / tP
P
vP
jf
2P0 for P= P0 Pe
jt
1-3 is expected for only the very best lasersChirping gets worse at high frequenciesRelaxation oscillations will produce large dp/dt which leads to large chirpingDamping of relaxation oscillations will reduce chirpCorrectly adjusting the material composition and laser mode volume can reduce
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Reflection Sensitivity
R. G. F. Baets, University of Ghent, Belgium
Problem
Solution
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Example
A GaInAs diode laser has the following properties:
• Peak wavelength: 1.5337 m
• Spacing between peaks: 1.787x10-3 m
• J/Jth=1.2
What are the turn-on delay time, the cavity length, the threshold electron density, and the threshold current?
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Turn-on delay time
=3.7 ln(1.2/1.2-1) = 6.63 ns
th
bNd JJ
JJt ln
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Cavity length
L = (1.5337)2/(2)(3.56)(1.787x10-3)
= 184.9 m
nL2
2
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Threshold electron density
R = 0.3152
g(1/L)ln(1/R)+
gth=1/.01849 ln(1/.3152)+100=162.4 cm-1
From figure, N=1.8x1018 cm-3
2
1
1
n
nR
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Threshold current
J/2de = I/2deLW
Ith=(0.5x10-4)(1.6x10-19)(1.8x1018)(.01849)(4x10-4)/(3.7x10-9)
Ith=29 mA
N
NNNb
de
J
dt
dN
)(2
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Laser Diode Structures
Most require multiple growth stepsThermal cycling is problematic for electronic devices
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Laser Reliability and Aging
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Power degradation over time
Lifetime decreases with current density and junction temperature
DtePP /0
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Problems with Average Power Feedback control of Bias
Ligh
t
Current
Average Power
Ideal L-I Characteristic
Ligh
t
Current
Average Power
L-I Characteristic with temperature dependent threshold
Turn on delay increasedFrequency response decreased
Ligh
t
Current
Average Power
L-I Characteristic with temperature dependent threshold and decreased quantum efficiency
Output power, frequency response decreased
Average number of 1s and Os (the “Mark Density”) is linearlyrelated to the average power. If this duty cycle changes then the bias point will shift
Problem: L-I curves shift with Temperatureand aging
-
+Data
Laser Monitor Photodiode
Vref
-5V
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Light Emitting Diodes
An Introduction to Fiber Optic Systems-John Powers
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LED Output Characteristics
An Introduction to Fiber Optic Systems-John Powers
Typical Powers •1-10 mW
Typical beam divergence•120 degrees FWHM – Surface emitting LEDs•30 degrees FWHM – Edge emitting LEDs
Typical wavelength spread•50-60 nm
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Distributed Feedback (DFB) Laser Structure
•Laser of choice for optical•fiber communication
•Narrow linewidth, low chirp for direct modulation
•Narrow linewidth good stability for external modulation
•Integrated with Electro-absorption modulators
As with Avalanche photo-diodesthese structures are challenging enoughto fabricate by themselves without requiringyield on an electronic technology as well
Hidden advantage: the facet is not as criticalas the reflection is due to the integratedgrating structure
Distributed FeedBack (DFB) Laser Distributed Bragg Reflector(DBR) Laser
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Bragg wavelength for DFB lasers
k
nB
2
nL
mBB 2
2/12
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Thermal Properties of DFB Lasers
Agrawal & Dutta 1986
Light output and slope efficiency decrease at high temperature
Wavelength shifts with temperature•The good: Lasers can be temperature tuned for WDM systems•The bad: lasers must be temperature controlled, a problem for integration
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VCSELs
• Much shorter cavity length (20x)
• Spacing between longitudinal modes therefore larger by that factor, only one is active over gain bandwidth of medium
• Mirror reflectivity must be higher
• Much easier to fabricate
• Drive current is higher
• Ideal for laser arrays
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Choosing between light sources
• Diode laser: high optical output, sharp spectrum, can be modulated up to tens of GHz, but turn-on delay, T instability, and sensitivity to back-reflection
• LED: longer lifetime and less T sensitive, but broad spectrum and lower modulation limit
• DFB laser: even sharper spectrum but more complicated to make
• MQW laser: less T dependence, low current, low required bias, even more complicated
• VCSEL: single mode and easy fabrication, best for arrays, but higher current required