EE 132 Electronic Devices and...
Transcript of EE 132 Electronic Devices and...
EE 132 Electronic
Devices and Circuits
Electrical Engineering Department Faculty of Engineering Alexandria University
Spring 2015
Lecturer: Bassem Mokhtar, Ph.D. Assistant Professor
Department of Electrical Engineering
Alexandria University
Introduction 1-1
Outline
Course Overview
Quick Review on Circuit Basics
Introduction to Electronics
Semiconductor Physics
Introduction 1-2
Course details
Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays)
Tutorial hours: 2 One tutorial class every week
Lab hours: 1 One experiment every two weeks
Course website: http://eng.alexu.edu.eg/~bmokhtar/courses/electronics_EE/spring_2015/electronics_EE.htm
Introduction 1-3
Course outline
Introduction to semiconductor physics and materials (2 weeks) Conductors vs. Insulators vs. Semiconductors
p-type, n-type
p-n junctions (2 weeks) Diodes and diode circuits
BJT transistors (3 weeks) Different types of BJT circuits
DC and AC Biasing
FET transistors (1 week) Brief Introduction
JFET
MOSFET (4 weeks) Different types of MOSFET circuits
DC and AC biasing
CMOS (1 week)
Introduction 1-4
Course Objectives
Having successfully completed this course, the student will be able to: (a) Comprehensively understand of electronic circuits and devices (diodes, BJTs, MOSFETs)
(b) Learn physical models of the operation of semiconductor devices
(c) Examine the design and operation of important circuits that utilize these devices
Introduction 1-5
Course Prerequisites: Course: EE x11 Electric Circuits
References
Lecture Notes
“Microelectronic Circuits”, Sedra/Smith,4th edition, 2004.
“Electronic Devices and Circuit Theory”, Boylestad and Nashelsky, 7th edition
“Fundamentals of Microelectronics”, Razavi, 2006
Introduction 1-6
Assessment Lab Work: ~ 11.5% (20 points)
Experiments and related reports (10 points)
Project (each team comprises 6 students) (10 points)
• Project paper, discussion, presentation and Simulations (LTspice IV)
Midterm Exam: 20% (35 points)
Oral Exam: ~ 8.5% (15 points)
Final Exam: 60% (105 points)
Introduction 1-7
Project The final project will run in parallel with the course. Each team (six students per team)
will choose freely an electronic device/topic (not covered in the course)
The electronic device/topic will be chosen by the team on a first-come first-serve (FCFS) basis (no more than two teams per device/topic)
The team will need to do more extensive searching for the latest research work concerning the selected device/topic
Each team will prepare and submit a project paper (using WORD, LATEX) which provides qualitative study for the their device /topic via including: Schematic of related device structure illustrating the key operating principles
Representative electrical data showing how related device works (e.g., current-voltage curves)
Discussion of the basic operation of related device and key variations thereof
Discussion of the major challenges to realizing the related device in a technology
Table of performance measure metrics for the related device
Table of comparison which compares the related device with other relevant/similar devices
Citation of all referenced work, figures, etc
(You can add other issues based on your selected device/topic) example: experimental study and results
Conducting simulations (using, for example, LTSpice IV) will be considered as bonus for the team members
Implementing hardware circuits for the studied topic/device will be also considered as bonus.
Teams will present their project and they will be discussed
Introduction 1-8
Examples of Project Topics Carbon nanotube field effect transistor
Ballistic transistors
Resonant Tunneling Diode
Coulomb blockade and single electron transistor
Graphene field effect transistor
Dissipation in FETs
Nano Sensors
Flexible Electronics
Quantum effects in nanoscale electronic devices
Raspberry Pi
FPGA
Introduction 1-9
DEADLINE for Project Team Formation and Project Topic
Selection: 22th February
Office Hours
Wednesdays (11:00 am to 12:00 pm) or appointment at office 4-4-F132 Email me via group representatives
Introduction 1-10
Attendance
Attendance in class is considered essential
Course TA Eng. Mostafa Ayesh and Eng. Yahia
Elbeltagy (tutorials)
Quick Review (Circuit Basics)
Introduction 1-11
Quick Review (Circuit Basics)
Introduction 1-12
Quick Review (Circuit Basics)
Introduction 1-13
Test your self now:
Write down equation
for calculating iB in
terms of voltages,
currents and resistors
Quick Review (Circuit Basics)
Introduction 1-14
Quick Review (Circuit Basics)
Introduction 1-15
Quick Review (Circuit Basics)
Introduction 1-16
Quick Review (Circuit Basics)
Introduction 1-17
Quick Review (Circuit Basics)
Introduction 1-18
Quick Review (Circuit Basics)
Introduction 1-19
Introduction 1-20
Introduction to Electronics
Block diagram of a simple electronic system: AM radio receiver
Introduction 1-21
Introduction to Electronics
Amplifiers
Filters
Signal sources (oscillators)
Wave-shaping circuits
Digital logic functions
Memories
Power supplies
Converters
Common “Blocks” in an Electronic System
Introduction 1-22
Introduction to Electronics
Analog vs. Digital Signals
Introduction 1-23
Introduction to Electronics
Analog to Digital Conversion
Introduction 1-24
Introduction to Electronics
Signals and Noise
Introduction 1-25
Introduction to Electronics
Analog vs. Digital Digital circuits advantages
Better immunity to noise
Easier to implement with IC techniques
More adaptable to variable uses
Analog Circuits advantages Require less devices
Better to deal with low signal amplitudes
Better to deal with high frequencies
What is the foundation material for all modern electronics ?
Answer: Semiconductor materials
Introduction 1-26
Introduction 1-27
Brief History Rectification in metal-semiconductor contact (Braun, 1874)
Theory of thermionic emission (Bethe 1942)
Transistor (point-contact transistor) using polycrystalline germanium (Shockley, Bardeen and Brattain, 1947)
Bipolar junction transistor (Shockley, 1947)
Integrated circuit (Kilby and Noyce, 1958) using bipolar junction transistors
Practical metal-oxide-semiconductor (MOS) devices (1960s)
Small Scale Integration (SSI) (~10 Trs.chip) ->MSI(~100 Trs/chip)-> LSI (10,000 Trs/chip) in the 1970s)
VLSI (~10^5 Trs/chip) -> ULSI (10^6 Trs/chip) in the 1990s
Multicore chip processors -> 10^8 Trs/core up to 8 processors by 2010
The International Technology Roadmap for Semiconductors (ITRS) predicts 8 nm feature size with 1000 cores in 2020
Introduction 1-28
GOING TO THE FIRST TOPIC
Semiconductor Physics
Introduction 1-29
Introduction 1-30
Comparison Conductor
Easily can conduct electrical current Least valence electron on the atom-loosely bounded
Insulator Does not conduct electrical current under normal
condition Most are compounds Lots of electron exist on the valence shell-tightly
bounded
Semiconductor Element that is neither a conductor nor an insulator but
lies between the two element A material that is between conductors and insulators in
its ability to conduct electrical current Easily affected by temperature and light energy Most of them have 4 valence electrons on the valence
shells-bounded in intermediate strength
Introduction 1-31
Semiconductor Materials Atom Bohr Model
Atom have planetary type of structure consisting central nucleus equipped with the proton and surrounded by orbiting electron
Proton are positively charged and electron are negatively charged
Atomic number The atomic number is equal to the number of
protons in an atom’s nucleus
Distinguishes the chemical group characteristics
Electron shells and orbit Electron near the nucleus have less energy
than the outer one
Each electron orbits are grouped in shells (energy bands)
Introduction 1-32
Maximum number of electrons
(Ne) that exist in each shells of
atom can be calculated as
Ne = 2n2
where n(1,2,3,…) is the
number of the shells.
Semiconductor Materials Energy level increases as the distance from
the nucleus increases Valence electron
The outmost electrons are in the valence shells and known as valence electrons Valence shells represents the energy band of an atom The farther the electrons from the nucleus, the higher energy it gets Strongly related defining chemical reaction, bonding
structure and electrical properties Semiconductors have four valence electrons at the outermost
atomic shell Most conductors have just one electron in the valence shell
(high probability to form covalent bonds) Insulators have eight valence electrons
Introduction 1-33
Semiconductor Materials
Introduction 1-34
Valence shells represents the band of energy of an atom
Conduction bands
Existence of valence electron where that electron becomes a free electron when it acquires enough additional external energy
Energy gaps
Energy differences between conduction bands and valence bands (define the required energy for electron valence to be a free electron)
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Lecture Summary
Covered material Course Introduction
Load, assessment and topics
Quick Review (circuit basics) Introduction to Electronics and Semiconductor
Physics Material to be covered next lecture
Continue Semiconductor Physics Types of semiconductors Types of charge “carriers” in semiconductors Creation of electron-hole pairs Doping