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    ECM1106 - Electronics for Engineers Dr Mustafa M Aziz(2010)

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    THE BIPOLAR JUNCTION TRANSISTOR (BJT)

    1. Bias Stability

    2. Transistor Switches

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    1. Bias Stability

    For amplifying signals, DC bias was used to fix ICand VCEfor constant IBon the linear or active

    part of the characteristics. The position of the operating point depends on the current gain .

    , however, changes with temperatureandfrom transistor to transistor. The consequence is ashift in the operating point on the characteristic curve outside the active region of the

    characteristics leading to distortion, making the circuit not suitable for amplification.

    Example: Determine the values of ICand VCEfor the following circuits:

    1k5286k

    typ=100

    +15V

    (a)

    1k5286k

    max

    =200

    +15V

    (b)

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    1.1. Voltage-Divider Bias Circuit

    The circuit shown below provides DC bias that is almost independent of . The idea here is to

    fix the emitter current IE(IC) through the emitter resistor REsuch that it is independent of .

    In this case, IBis no longer fixed but will change to maintain the constant emitter (and collector)currents.

    Resistors R1and R2form a voltage-divider to set the DC voltage level of the base terminal (to

    ensure that the base-emitter junction is forward biased).

    VCC

    C1

    R1

    R2

    RC

    RE

    vivo

    C2

    VCC

    C1

    R1

    R2

    RC

    RE

    vivo

    C2

    Aim: choose resistor values to set the operating point (i.e. VCEand IC) in the linear region of the

    output characteristics.

    1.1.1. Input Circuit

    VCC

    R1

    R2 Ri

    I1

    I2

    IB

    VCC

    R1

    R2RE

    I1

    I2

    IE

    IB

    Ri

    VB

    VCC

    R1

    R2 Ri

    I1

    I2

    IB

    VCC

    R1

    R2RE

    I1

    I2

    IE

    IB

    Ri

    VB

    Resistance between base and ground: RiRE.

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    Provided Riis much larger than R2such that:

    RE10R2

    then IB

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    1.1.3. Self-Stabilising Network Action

    IC increase

    IE increase

    VE=IERE increase

    VBE=VB-VE decrease VB = constant

    determined by

    R1, R2 and VCC

    IB decrease

    VBE

    IB

    0

    IC=IB decrease

    IC increase

    IE increase

    VE=IERE increase

    VBE=VB-VE decrease VB = constant

    determined by

    R1, R2 and VCC

    IB decrease

    VBE

    IB

    0 VBE

    IB

    0

    IC=IB decrease

    Any tendency to increase ICwill be met with a network reaction to decrease it.

    1.1.4. Coupling Capacitors

    The input capacitor C1serves two purposes:

    1. Couples (superimposes) the AC input signal with the bias current.2. Blocks DC components of input signals (XC= ) that would affect the set DC bias

    level.

    The output capacitor C2is used to AC couple the output signal to a load and remove DC levels

    produced by biasing stages.

    The coupling capacitors should ideally provide zero reactance (XC=0, i.e. C) to AC signals.

    Typical value for coupling capacitors are 1 10F.

    1.2. Amplifier Design Considerations

    RCis designed to drop about half of the supply voltage to provide a symmetrical voltage swing

    of the output signal.

    REcannot be unreasonably large because voltage across it limits range of V CE. VEis typically

    set to be 1/4 to 1/0 of VCC.

    The base resistor R2is chosen such that 10R2RE.

    The value of R1is then determined from CC

    21

    2B VRR

    R

    V +=

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    Example: The following circuit is used to amplify the signals coming from a microphone.

    (a) Determine the values of R1, R2, REand RCfor the operating point indicated.

    (b) If an input AC signal with amplitude 0.5V and 2kHz frequency is applied, sketch the input,

    output and emitter voltage waveforms.

    (c) Estimate the voltage gain of this circuit.

    15V

    10F

    R1

    R2

    RC

    RE

    vivo

    0.7V

    10F

    15V

    10F

    R1

    R2

    RC

    RE

    vivo

    0.7V

    10F

    VCE (V)0 1 2 3 4 5 6 7 8 9 10

    -3

    0

    3

    6

    9

    12

    15

    18

    21

    24

    27

    30

    IB=0A

    20A

    40A

    60A

    80A

    100A

    120A

    140A

    IC(mA)

    VCE (V)0 1 2 3 4 5 6 7 8 9 10

    -3

    0

    3

    6

    9

    12

    15

    18

    21

    24

    27

    30

    IB=0A

    20A

    40A

    60A

    80A

    100A

    120A

    140A

    IC(mA)

    0 1 2 3 4 5 6 7 8 9 10-3

    0

    3

    6

    9

    12

    15

    18

    21

    24

    27

    30

    IB=0A

    20A

    40A

    60A

    80A

    100A

    120A

    140A

    IC(mA)

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    1.3. Signal Voltage Gain

    Increasing IBdue to input signal and hence ICincreases the voltage drop ICRC. But since VC=

    VCC-ICRC, the output collector voltage decreases.

    Likewise, decreasing IB due to input signal and hence IC, decreases voltage drop ICRC. Butsince VC= VCC-ICRC, the output collector voltage increases.

    Therefore there is 180o phase shift between base (input) and collector (output) signals

    inverting amplifier.

    R1

    R2

    RC

    RE

    vivo

    +VCC

    vB

    vC

    R1

    R2

    RC

    RE

    vivo

    +VCC

    vB

    vC

    Signal voltage gain of amplifier,B

    C

    i

    ov

    vbase,atamplitudevoltagesignalAC

    vcollector,atamplitudevoltagesignalAC

    v

    vA ==

    Because base-emitter junction is forward biased, then vBvE, and hence:

    EE

    CC

    B

    C

    vRi

    Ri

    v

    v

    A ==

    But and since iCiEthen:

    E

    Cv

    R

    RA

    Example: Compare the estimated signal voltage gain in the previous example with the calculated

    one using the above equation.

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    2. Transistor Switches

    The second major application of transistors is electronic switching for computer and control

    applications.

    Typical transistor switching circuit is shown below, where it can be seen that the DC source isconnected to the collector (or output) side only (and not to the base).

    VCC

    RC

    RB

    vi

    VCEorvo

    IB

    IC

    VCC

    RC

    RB

    vi

    VCEorvo

    IB

    IC

    When used as an electronic switch, the transistor switches between cutoffand saturation.

    2.1. Cutoff

    vi= 0V, IB= 0A and hence IC0mA.

    The voltage drop across RCis ICRC= 0V resulting in:

    VCEVCC

    2.2. Saturation

    Input signal vi forward biases B-E junction and

    provides sufficient base current IB to increase IC to its

    maximum (ICsat) such that most of the supply voltageVCCdrops across RC.

    VCEis then very small (VCEsat0.1 - 0.3V) and can beneglected and replaced by short circuit. The collector

    current (or value of RC to achieve saturation) is then

    determined from:

    C

    CC

    CsatR

    VI =

    RC

    RB

    0V

    IC=0

    +VCC

    RC

    +VCC

    C

    E

    RC

    RB

    0V

    IC=0

    +VCC

    RC

    +VCC

    C

    E

    RC

    RB

    vi

    ICsat

    +VCC

    RC

    +VCC

    C

    E

    IB

    ICsatRC

    RB

    vi

    ICsat

    +VCC

    RC

    +VCC

    C

    E

    IB

    ICsat

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    To ensure saturation:

    > CsatBI

    I (typically set IB2ICsat/)

    The level of IBis set through applying Kirchhoff's voltage law around the input circuit:

    B

    BEiB

    R

    VvI

    =

    Example: For the following circuit:

    (a) What is VCEwhen vi= 0?

    (b) What is the minimum value of IB that will saturate the

    transistor?

    (c) Calculate maximum RBwhen vi= 5V.

    Example: For the following circuit:

    (a) Determine ICsat.

    (b) Determine IBat saturation.

    (c) Plot the output voltage waveform across the collector.

    820R

    68k

    +5V

    =125

    vi

    5V

    t0

    820R

    68k

    +5V

    =125

    vi

    5V

    t0

    1k

    RB

    vi

    +10V

    =200

    1k

    RB

    vi

    +10V

    =200

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    2.3. Inductive Load Drivers

    Transistors are used to establish the necessary current to

    energise (or drive) devices with coils such as relays and

    motors.

    When positive pulse is applied, the transistor is turned on

    (saturation) to establish sufficient current to drive the

    inductive load.

    When the signal to the base is removed to turn off the

    transistor (cutoff), the rapidly decreasing collector current

    develops a large reverse voltage across the coil (VL =

    LdI/dt).

    This also induces a large positive voltage at the collector terminal which exceeds the breakdown

    voltage of the transistor causing permanent damage to the transistor.

    RB

    +VCC

    vi

    t0

    off

    I

    t0

    Large voltage

    spike, VL = LdI/dt

    I

    boomRB

    +VCC

    vi

    t0

    off

    I

    t0

    Large voltage

    spike, VL = LdI/dt

    I

    boom

    Solution: add a diode in parallel with the inductive load diode forward biased during turn offto short out and dissipate the voltage spike and current.

    RB

    +VCC

    vi

    t0

    Diode forward

    biased during

    turn off

    ION

    IOFF

    RB

    +VCC

    vi

    t0

    Diode forward

    biased during

    turn off

    ION

    IOFF

    RB

    +VCC

    vi

    t0

    on

    I

    RB

    +VCC

    vi

    t0

    on

    I

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    Example: A motor switch circuit is shown below. The motor is on when the control signal is 5V,

    and off when the control signal is 0V.

    (a) Determine the minimum IBrequired to turn on the motor (saturation).

    (b) Determine the maximum value for RBto maintain saturation of the transistor.

    (c) Sketch the input and output voltage waveforms for this circuit.(d) What protection you need to apply to prevent damage to the transistor during turn off?

    RB

    +5V

    vi

    t0

    250mH

    5R

    =50

    Motor

    5V

    RB

    +5V

    vi

    t0

    250mH

    5R

    =50

    Motor

    5V

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    2.4. Logic Gates

    Logic gates are the fundamental building blocks of digital integrated circuits and components.

    They consist of transistors operating as switches in the saturation and cutoff regions.

    For example, an AND gate implementation using transistors is shown.

    10k

    B

    +5V

    10k

    A

    3k3 C=A AND BA B C

    0 0

    0 1

    1 0

    1 1

    Q1

    Q210k

    B

    +5V

    10k

    A

    3k3 C=A AND BA B C

    0 0

    0 1

    1 0

    1 1

    Q1

    Q2

    If both inputs A and B have a turn-on voltage, then both transistors Q1 and Q2 are approximately

    short circuits (saturation) providing a path from 5V supply to output terminal high or binary 1state.

    If one or both transistors are off due to 0V at input terminal, an open circuit (cutoff) is placed in

    series with the path from the 5V supply to output terminal 0V or binary 0 state.