ECE340 ELECTRONICS I
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Transcript of ECE340 ELECTRONICS I
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ECE340
ELECTRONICS I
MOSFET TRANSISTORS AND AMPLIFIERS
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MOSFET
• METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR
• VOLTAGE - CONTROLLED DEVICE
• LOW POWER DISSIPATION
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MOSFET
SOURCE DRAIN
OXIDE
METAL
OXIDE OXIDE
CHANNEL
L
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NMOSFET ENHANCEMENT MODE DEVICE
N TYPE SOURCE N TYPE DRAIN
OXIDE
METAL
OXIDE OXIDE
P TYPE SUBSTRATE
+VG+VD
-VS
-VB
DEPLETION LAYER DEPLETION LAYER
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MOSFET “ON” CONDITION
n+ n+
OXIDE
METAL
OXIDE OXIDE
VG > VTN +VD
p
ID
electrons
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MOSFET PARAMETERS
• iD – DRAIN CURRENT
• VTP,VTN – THRESHOLD VOLTAGE (VTH)
• vDS – DRAIN TO SOURCE VOLTAGE
• vGS – GATE TO SOURCE VOLTAGE
• vB – BULK VOLTAGE
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THRESHOLD VOLTAGE
• VOLTAGE REQUIRED TO CREATE AN INVERSION LAYER OF CHARGE UNDER THE GATE OXIDE
• POSITIVE FOR n-CHANNEL DEVICES
• NEGATIVE FOR p-CHANNEL DEVICES
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BULK VOLTAGE
• LOWEST VOLTAGE AVAILABLE FOR NMOS (N-CHANNEL) DEVICES
• HIGHEST VOLTAGE AVAILABLE FOR PMOS (P-CHANNEL) DEVICES
• REVERSE-BIASES PN JUNCTIONS
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MOSFET CAPACITANCE
• POSITIVE OR NEGATIVE VOLTAGE AT GATE TERMINAL INDUCES CHARGE ON GATE METAL
• CHARGE OF OPPOSITE TYPE ACCUMULATES IN CHANNEL
• FORMS MOSFET CAPACITOR
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OXIDE CAPACITANCE
cmF
tC
o
oox
ox
oxox
/1085.8
9.3
14
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PARAMETER DEFINITIONS
n,p - ELECTRON OR HOLE MOBILITY
ox – PERMITTIVITY OF OXIDE
• tox – OXIDE THICKNESS
• (W/L) – ASPECT RATIO
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MOSFET OPERATION
• SOURCE TERMINAL IS GROUNDED
• GATE AND DRAIN VOLTAGES REFERENCED TO SOURCE VOLTAGE
• VOLTAGE IS APPLIED TO GATE TERMINAL TO INDUCE CHARGE IN THE CHANNEL
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CHARGE FLOW
• CHARGE IS PULLED INTO CHANNEL FROM DRAIN AND SOURCE REGIONS
• CHARGE FLOWS FROM SOURCE TO DRAIN AS DRAIN VOLTAGE IS INCREASED
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DEVELOPMENT OF MOSFET EQUATIONS
dt
dxchargechannelofvelocity
dx
xdvxEv
VxvvWdxCdq
DS
THGSox
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DEVELOPMENT OF MOSFET EQUATIONS
dx
xdvVxvvWCμiii
dt
dx
dx
dqi
dt
dqi
dt
dxchargechannelofvelocity
THGSoxnDD
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DEVELOPMENT OF MOSFET EQUATIONS
DSv
THGSoxn
L
D
THGSoxnD
THGSoxnDD
xdvVxvvWCdxi
xdvVxvvWCdxi
dx
xdvVxvvWCiii
00
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DEVELOPMENT OF MOSFET EQUATIONS
2'
'
2
2
1
2
1
DSDSTHGSnD
oxnn
DSDSTHGSoxnD
vvVvL
Wki
Ck
vvVvL
WCi
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N-CHANNEL MOSFET EQUATIONS
2'
2'
2
1
2
1
0
THGSnDTHGSDS
DSDSTHGSnDTHGSDS
DTHGS
VvL
WkiVvv
vvVvL
WkiVvv
iVv
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MOSFET CHARACTERISTICS
vDS
0V 2V 4V 6V 8V 10V 12V
ID
0mA
0.5mA
1.0mA
1.5mA
vGS3
vGS2
vGS1
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TRANSCONDUCTANCE PARAMETER COMPONENTS
• MOBILITY
• ELECTRIC PERMITTIVITY
• OXIDE THICKNESS
• ASPECT RATIO
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TRANSCONDUCTANCE PARAMETER PHYSICS
ox
oxox
oxox
ox
tC
Ckt
k
L
WkK
''
'
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n-CHANNEL MOSFET OPERATION IN CUTOFF REGION
0
D
THGS
i
Vv
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n-CHANNEL MOSFET OPERATION IN LINEAR REGION
2
2
1DSDSTHGSnD
THGSDS
vvVvKi
Vvv
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n-CHANNEL MOSFET OPERATION IN SATURATION REGION
22
1THGSnD
THGSDS
VvKi
Vvv
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p-CHANNEL MOSFET OPERATION IN CUTOFF REGION
0
D
THSG
i
Vv
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p-CHANNEL MOSFET OPERATION IN LINEAR REGION
2
2
1SDSDTHSGpD
THSGSD
vvVvKi
Vvv
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p-CHANNEL MOSFET OPERATION IN SATURATION REGION
22
1THSGpD
THSGSD
VvKi
Vvv
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NMOS INCREMENTAL RESISTANCE IN THE LINEAR REGION
1
1
2
1
2
1
THGSnDS
smallv
VvDS
DDS
DSTHGSnDDS
DSDSTHGSnD
VVKrv
ir
vVvKiv
vvVvKi
DS
GSGS
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PMOS INCREMENTAL RESISTANCE IN THE LINEAR REGION
1
1
2
1
2
1
THSDnDS
smallv
VvSD
DSD
SDTHSGpDDS
SDSDTHSGpD
VVKrv
ir
vVvKiv
vvVvKi
SD
SGSG
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MODULATED CHANNEL IN SATURATION REGION
n+ n+
OXIDE
METAL
OXIDE OXIDE
VG > VTN +VD
p
ID
VD>>VG
TAPERED CHANNEL
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NMOS INCREMENTAL RESISTANCE IN SATURATION REGION
1
12
1
2
2
12
1
DO
THGSn
O
VvDS
DO
DSTHGSnD
Ir
VVK
rv
ir
vVvKi
GSGS
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PMOS INCREMENTAL RESISTANCE IN SATURATION REGION
1
1
2
1
2
2
12
1
DO
THSGp
O
VvSD
DO
SDTHSGpD
Ir
VVK
rv
ir
vVvKi
SGSG
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DEPENDENCE ON DRAIN VOLTAGE
2THGS'nD
DO
VVL
Wk
2
1I
parametermodulationlengthchannelλ
λI
1r
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PSPICE MOSFET SYMBOLS
p-channel enhancement n-channel enhancement
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NMOS LARGE SIGNAL MODEL
VGS
VDS
+
-
S
+
G
S
rO
-
DG
2THGS'n VV
L
Wk
2
1
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DEVELOPMENT OF MOSFET SMALL-SIGNAL MODEL
dDDgsGSGS iIivVv
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TOTAL CURRENT AND VOLTAGE
gsTHGSTHGSnDgs
gsgsTHGSTHGSnD
gsTHGSnDTNgsGSnD
vVVVVL
Wkiv
vvVVVVL
Wki
vVVL
WkiVvV
L
Wki
22
11
22
1
2
1
2
1
2'2
22'
2'2'
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COMPONENTS OF TOTAL CURRENT
gsTHGSnd
gsTHGSnTHGSnD
dDD
vVVL
Wki
vVVL
WkVV
L
Wki
iIi
'
'2'
2
1
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MOSFET TRANSCONDUCTANCE
THGSnm
gs
dm
gsTHGSnd
VVL
Wkg
v
ig
vVVL
Wki
'
'
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ALTERNATIVE TRANSCONDUCTANCE EQUATION
DnmTHGSnm
n
DTHGSTHGSnD
IL
WkgVV
L
Wkg
LW
k
IVVVV
L
WkI
''
'
2'
2
2
2
1
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SMALL-SIGNAL MODEL
g d
s s
rO
VCC
vds
+
-
+
vgs
-
gmvgs
id