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Transcript of ECE 7366 Advanced Process Integration The CMOS Traasistors Dr. Wanda Wosik Text Book: B. El-Karek,...
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ECE 7366 Advanced Process Integration
The CMOS Traasistors
Dr. Wanda Wosik
Text Book: B. El-Karek, “Silicon Devices and Process Integration”, Chapter 5
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FET Structures
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Non-Ideal MOS Structure
Work function difference vs doping for Al gates and degenerate poly-silicon p+ and n+ type.
Note the symmetry of fms for poly-Si and asymmetry for Al gates
Band bending due to work function differences. No charge in the oxide assumed
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Polysilicon Workfunction
Intrinsic Si
The role of Ge in regulating work function of polysilicon: p+ polySi by 0.4eV (strain for higher Ge x>0.45). Less doping (VG )– higher mobility
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Scaled down NMOS device with poly-Si gate Poly-Si depletion Inversion capacitance decreases
Charging at the metal dielectric interfaceDipol EF,m aligns more with ECNL,d it is increasingly more (S to 0 for perfect pinning) with increasing e of dielectric Effective work function Fm changes from the metal vaccuum level
Yeo,IEEE, 2002
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Selection of Metal Gates and High-K Dielectric
Y-C Yeo et al.
Use dual work function metal gates Stability of work function on dielectric: Silicon Nitrides of Ti, TaWatch for resistivity.
required
obtained
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Metal F-level pinned to ECNL of the dielectric.
Effect of Fermi level pinning is smaller for poly-si gates – less changes of effective work function
Yeo, IEEE 2002
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Metal Gates
Midgap work function: W, TiN, W/TiN ~4.8 eV
Disadvantage in small devices: high concentrations in the channel ~1018cm-3
(fb~0.5eV ) VT~0.5V but VT required ~ 0.2-0.25V (VG-VT). To lower VT use implant (buried channel devices)– bad for mobility & SCE so midgap gates are not good for scaled down devices.
Dual work function: c+0.2V (NMOS) ~ 4.35eV and c+Eg/q-0.2V (PMOS) 5.07 eV
~4.7 eV
Y-C Yeo et al.
Yang et al.
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Verghese, SST, 2012
~0.4 eV for UT SOI
Work Function Requirements and
Options
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Polishchuk, 2001
Metal gates – challenge to control work function and stability
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Fermi Level Pinning
Fully Silicided Gate FUSI
NiSi doped with As (4.58 eV), B (5.1. eV), or undoped poly_Si (4.87 eV) – doping changes the workfunctionNixSiy &phase change the workfuction as well 4.44 eV 5.0 eV
For metal gates metal induced surface states MIGS
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14Frank&Taur, SSE, 2002
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Process Flow for ICs
Define;• components• their parameters • tolerances• limitations
• range of operating T• reliability• tools and limitations in production• overall costs
Define process flow• simulate devices and processes• run experimental short-loops
• use test structures• design, simulate and process complete test structure that
includes• process monitoring• components’ parameters testing• their tolerances & reliability• yield structure
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A Conventional CMOS Logic Process Flow - STI
1019cm-3 (100)
1015-1016cm-3 epi
Depth~0.25-0.5µm
10-15nm
100-150nm
10-20nmEtch oxide for easier CMP
Nitride is the stop layer
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A Conventional CMOS Logic Process Flow – Well implantsOxide&nitride pads removed;
grow
Oxide is used to decrease channeling effect in implantation &protect the surface
P-well for NMOS will be similarly done by Implantation
Tailored profile in Implantation
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• Sacrificial oxide etched
• Gate oxide grown 3-4 nm
• Undoped poly-Si grown
• PolySi patterned by RIE
• Pattern NMOS vs PMOS
• Implant S/D & gate• Thin oxide on poly
removes RIE damage and protects gate in P/As implant
• Halo implants
ox~10-15 nm
CVD deposition and etch back of nitride 100-150nm
Poly-Si gate doping: • single workfunction (ex. P – watch for VT in PMOS that gives buried channel)• dual workfunction (ex. B outdiffusioncan also lead to buried channels PMOS)• watch for poly-Si depletion
Watch for junction leakage due to silicon consumption during silicidation
Remove oxide and sputter deposit ~20-30nm metal: Ti, Co Ni
A Conventional CMOS Logic Process Flow – gates/junctions/contacts
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19Park &Hu
A Few Notes on Spacers
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21Niwa, Sematech Symposium
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What we Gain by Using Metal Gates
Hoffmann,SST, 2010
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Metal Gates
Gate first or gate last=replacement-gate?
CMP
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Dual Metal Gate for High CMOS Performance Process Flow
Yeo, IEEE, 2004
Niwa, Sematech Symposium
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Dual Work Function Gates
20 nm
10 nm
5 nm
20 nm
LOCOS replaced by STI
For PMOS use Ru as a gate electrode
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Metal Interdiffusion Approach
Yeo, IEEE, 2004
(Ti~4eV)(Ni~5eV)
Single Metal Doping Approach
~5eVDecreased to~4.5eV
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Dual Workfunction Metal Gate Process
ALD
Reactive sputtering TiN wet
etch
Reactive Sputtering of TaSiN
Heavy doped
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Niwa, Sematech Symposium
Gate Stacks in High-K/Metal Gate System
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Fully Silicided Polysilicon FUSI
Earlier shown for CoSi2 - 100nm
Workfunction modified by Ni/Si ratio: • Si-rich fm~4.5 eV (NMOS)•Ni-rich fm~4.85 eV (PMOS)
• Silicidation can be done for NMOS and PMOS
• Dopant concentration changes work function
• Use M1 at the gate & other metal M2 on top
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FUSI Using Ni-Silicidation on Doped Poly Si
As and B dopingChanges of WF values by As (snow plow) but not by B
Maszara et al. IEEE 2002
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NMOS for different silicidation
NMOS gate leakage larger for FUSI than for Poly-SI gate
FUSI – Limitations
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HP Yu et al., 2006
FUSI using Amorphous Si and Ni-Silicide
The role of oxygen (measure profiles) in incomplete silicidation
900°C/20min
6-19nm
400°C/5min
100nm
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33Takalashi et al. IEDM, 2004
Phase Controlled FUSI Doped and Undoped Poly-Si (950°/10s)
Dielectrics: HfSiON and SiO2
~4.8eV
~4.5eV
~4.4eV
~4.8eV
~4.4eV~4.5eV
No degradation of h&el mobility
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Metal Gates - Deposition (ALD) of Metallic Films
H. Kim, Sematech Mtg, 2012
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FLP effect interface dipoles change EWF
Measurements done on variable oxide thickness
Eizenberg and Kornblum, Sematech Mtg.
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K=8
Interfacial layer increases EWF of TaAl & P have EWF as in vacuum
Interfacial layers change EWFUse Capping Layers
Rothschild, Sematech Mtg.
HfNx gate (N/Hf ratio 0 to 2)
Another example: Hf NMOS & HfNxPMOS
Interface from processing issues (reactive sputtering etc.)
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Planar Replacement Gate Device Structure
Capping Layers for Interfacial Charges/WF Control Constrains
Niwa, Sematech Symposium
Verghese, SST, 2012
Caps are added on purpose to set the WF due to dipoles – stability? – reliability?
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Gate first: Al2O3 for PMOS and LaOx for NMOS used as thin capping layers for dipoles that would determine VT – Instability – roll-off.EWF higher than in MIPS (metal inserted poly-Si)
EWF in PMOS with caps roll to mid-gap upon annealing
Hoffmann,SST, 2010
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39Niwa, Sematech Symposium
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Small Size Effects
Important: size calls for N in the substrate fluctuation in doping fluctuation fluctuation in VT – problems for circuits (analog more than digital)
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Gate Stack
History of gates in MOSFETs: •metal gate Al – not self aligned•polysilicon n+ type• dual poly-gates• silicides poly-gates• fully silicidedpoly-gates• metal gates – midgap• metal gates – dual
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High-k + Metal Gate Benefits
• High-k gate dielectric – Reduced gate leakage– TOX(e) scaling
• Metal gates– Eliminate polysilicon depletion– Resolves VT pinning and poor mobility for high-k dielectrics
Kawanago, PhD, 08D36028
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Kawanago, PhD, 08D36028
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Gate Stack Module
Gate-stack transition from silicides, doped poly-Si on SiO2 to metal gates on high-K dielectric
Gates scaling movie
Hsing-Huang Tseng
•Poly-Si depletion ~1.2 nm CET by ~ 0.4 nm•Poly-Si leaks B to the channel (dielectric and Si)
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46Iwai