ECE 353 Introduction to Microprocessor Systems Michael G. Morrow, P.E. Week 9.
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Transcript of ECE 353 Introduction to Microprocessor Systems Michael G. Morrow, P.E. Week 9.
ECE 353Introduction to Microprocessor Systems
Michael G. Morrow, P.E.
Week 9
TopicsMemory technologiesOrganization and operation of typical SRAM, EPROM and flash memory devicesMemory subsystem designAddress decoder implementationSRAM timing characteristics
Memory TerminologyHow could we classify memory devices?Read-Only Memory (ROM) In common usage, ROM is memory that
is nonvolatile.
Random-Access Memory (RAM) The time required to access any memory
location is the same – i.e. it does not need to be accessed in a specific order.
In common usage, RAM is memory that can be read or written with equal ease.
Memory TechnologiesROM (non-volatile) Masked ROM Field programmable
EPROM OTP PROM (fuse or EPROM)
Electrically erasable EEPROM (or E2PROM) Flash memory
RAM (volatile) SRAM DRAM Pseudo-SRAM
Emerging memory technologies
Memory OrganizationLogical organization Organization as seen looking at the device
from the outside Linear array of registers (memory locations)
Width – number of bits in each memory location Depth – number of memory locations Usually written as depth x width (i.e. 32k x 8)
Physical organization Different physical organizations can be used
to implement the same logical organization Physical organization affects performance
and cost
SRAM InterfacesRAM with 3 control inputs /CS, /OE, /WE Read Write aka “Intel style”
RAM with 2 control inputs E (CS), R/W (or /WE) aka “Motorola style”
/CS
/WE
/OE
internal write signal
internal read signal
ER/W
internal write signal
internal read signal
SRAM OrganizationLogical Organization Typically 1, 4 , 8 or 16 bit widths
Physical Organization Rectangular bit array Two-level decoding (row and column) Characteristic delays and timing requirements are
specified in memory devices datasheet (Example)
NV-SRAM Uses an alternate power source to maintain SRAM
when system power is off Requires logic to switch power sources and
prevent spurious writes during power-up/power-down
EPROMElectrically programmable, non-volatileRequires UV light to erase Quartz window in package
Floating polysilicon gate avalanche injection MOS transistor (FAMOS) Operation
Programmer loads device out-of-circuitOTP EPROMs eliminate quartz windowEEPROMs are electrically erasable Byte-erasable / writeable Low-density
JEDEC Packages
Flash MemoryActually Flash EEPROM, commonly just called flash memoryCharacteristics Technologies Endurance Blocking, programming and erasing
Applications ROM replacement GP NV-RAM Solid-state disk (flash-disk) Example
Memory Subsystem Design
Memory banks Increasing memory width Increasing memory depth Increasing memory width and depth
Address decoding Exhaustive (full) vs. partial (reduced)
decoding Boundaries
If address is a 2n boundary, then what is the result of (address AND (2n-1))?
We normally decode memory devices to be aligned on boundaries at least as large as they are
Memory ArchitecturesWide (n-byte) buses Addressing effects Byte transfer support
Data lanes Control signals
Bus resizing Static Configurable Dynamic
Memory Subsystems Review
What is the purpose of an address decoder circuit, and where does its output usually get connected?What is exhaustive decoding, and what effects does it have?What is partial decoding, and what effects does it have?
SRAM Timing Characteristics
An SRAM device has key timing parameters specified for the read cycle. tAA – address access time
tRDHA – data valid after address changes
tACS – chip select access time tRHCS – data valid after chip select
tCHZ – time until device floats bus
tOE – output enable access time tOHZ – time until device floats bus
tRC – read cycle time
The write cycle has a complementary set of specifications.
7C1046SRAM
27C512EPROM
HM624100HCSRAM
SRAM Timing Compatibility
In order to ensure that we will be able to reliably read and write the memory device, we need to ensure that the processor system bus interface is compatible with the memory device.This is accomplished by analyzing the timing for all relevant parameters of both the processor and memory, and ensuring that the operations can be completed reliably.
Wrapping UpQuiz #2 will be held Wednesday 11/5/2007 at 7:15-8:30pm in 2317EH Covers educational objectives for
modules 3 and 4 (weeks 5 through 8) Single 3x5 card with original handwritten
notes No calculators Instruction set references and any
needed datasheets will be provided
Reading for next week Supplement #3, review chapter 9 in text
JEDEC Standard Packages
http://www.jedec.org/download/search/3_07_05R12.pdf
Flash Blocks
Flash Memory Application:Disk-on-Key
Up to 64GB nonvolatile storage And climbing
No battery or power supply
Specifications:Data retention up to 10 years Erase cycles: 1,000,000 times Shock resistance: 1000 G (maximum)
RAM Read – 3 control signals
/CS
Dx
Ax
/OE
/WE
RAM Write – 3 control signals
/CS
Dx
Ax
/OE
/WE
Increasing Memory Depth
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A15 D7
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A14 D7
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Extending Depth
Increasing Memory Width
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A15 D3
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Extending Width
Increasing Memory Depth & Width
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Extending Width and Depth
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