Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode,...

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1 GSECARS, University of Chicago, Chicago [email protected] Dynamics of Crystallization and Melting under Pressure Vitali Prakapenka

Transcript of Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode,...

Page 1: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

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GSECARS, University of Chicago, Chicago

[email protected]

Dynamics of Crystallization and Melting under PressureVitali Prakapenka

Page 2: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

LVP

DAC

R.Wenk, 2005

•Most of what we know about the structure of the Earth's deep interior comes from the study of seismic wave velocities

•In order to interpret such measurements in terms of mineralogical/compositional models of the Earth's interior, data on the physical and chemical properties of minerals at high pressures and temperatures are essential

•Knowledge of thermodynamics, phase equilibria, crystal chemistry, crystallography, rheology, diffusion and heat transport are required to characterize the structure and dynamics of the Earth's deep interior

The world’s deepest borehole in Sakhalin is 12,345 m (40,502 ft)

Page 3: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

At pressures above 225 gigapascals andtemperatures over 3400 kelvin, Fe0.9Ni0.1 adoptsa body-centered cubic structure

Science 316, 1880 (2007), Times Cited: 53

Page 4: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

6 8 10 12 14

5 6 7 8 9 10 11 12 13 14 15

molten Ge

~1280K

Inte

nsity

, a.u

.

2Θ, degrees

1280K 1150K 1050K RT

MgOGe II

Ge, 19 GPa

0 5 10 15 20 25 30 35 40

400

800

1200

1600

2000 Voronin Ge-I Ge-I/Ge-II Ge-II melt

Tem

pera

ture

, K

Pressure, GPa

Ge-I Ge-II

Liquid

Prakapenka et al., High Pressure Research, 2008 , 28:3,225

High P-T phase diagram of Germanium

Page 5: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

hot spot in the confined space

10 microns

Diamond anvil

Diamond anvil

Pressure medium

Sample

Laser

X-ray

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Fe : SiO2, 38 GPa,

30 µm

Page 7: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

Carbon transport in diamond anvil cells

Prakapenka et al, High Temperatures High Pressures, 2003/2004, volume 35/36, pages 237-249

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Dewaele et al, PRL, 2010

Page 9: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

RT

1400K

1520K

1900K

1700K

T quenched

Fe:C(d) + NaCl, 1:1, P ~ 92 GPa

^ diamond

Fe3C

Fe7C3

Prakapenka et al, 2011

Page 10: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

SEM images of FeO sample after laser heating

Leonid Dubrovinsky, BGI

Page 11: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

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10 15 20

10 15 20

10 15 20

10 15 20

10 15 20

10 15 20

101 hcp

101 hcp

111 fcc

MeltT ~ 3250 K

10 15 20

10 15 20

Melting of Fe-Ni alloy at 60 GPa

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12

Ice VII, 7 GPa, Tm ~ 600K

(110)

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HT RT

Ice VII, 7 GPa, Tm ~ 600K

Laser heating

RT, starting

Page 14: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

14

Page 15: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

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60 s, 100 mm, 3 p/s

(110)

Laser effect?

Ice VII, 7 GPa, Tm ~ 600K

Page 16: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

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Pt foil: melting at ambient pressure with double sided laser heating

2100 K 1900 K

solid Pt fluid

Page 17: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

17

Grain boundary misorientation maps of electron back scattered diffraction

Kim et al, METALS AND MATERIALS International, Vol. 8, No. 1 (2002), pp. 7~13

Images of electron back scattered diffraction at 1000”C and 0.5/sec under various strains; (a) 10%, (b) 50% and (c) 500%

Page 18: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

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Dynamic recrystallization

http://www.ndt-ed.org

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•Chemistry •Sample diffusion•Crystallization

Page 20: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

fs ps ns µs ms s min

Atomicvibrations

Dislocation nucleation

recrystallization

Thermally activated reaction dynamics

Phase Transformation diffusion

Static experiment

o phase transition kineticso structural dynamics & deformation o chemical reaction dynamicso transport properties (diffusion)o electronic properties

Probing fundamental ultrafast processes

High P-T-B-εLaserDynamic load

XESInelastic scattering

SAXSSynchrotron

Page 21: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

Finite-element calculations of the temperature profiles in the DAC cavity

8 ns pulse width

Goncharov, JSR, 2009

CW

Page 22: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

0.16 0.20 0.24 0.28 0.32 0.36 0.400.0

0.3

0.6

Inte

nsity

, a.u

.

Time, ms

up to 50 kHz

Pulse laser heating

1 μs

Goncharov, Prakapenka et al, Rev. Sci. Instrum. 81, 113902 (2010)

Page 23: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

Prakapenka et al., High Pressure Research, 2008 , 28:3,225

Optical schema of the on-line, flat top, double-sided laser heating system at GSECARS

500 – 10,000 K

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Page 25: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and
Page 26: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

Standard Operating Mode, top-up102 mA in 24 singlets (single bunches) with a nominal current of 4.25 mA and a spacing of 153 nanoseconds between 40 ps singlets.

Special Operating Mode - hybrid fill, top-upTotal current is 102 mA. A single bunch containing 16 mA isolated from the remaining bunches by symmetrical 1.594 microseconds gaps. The remaining current is distributed in 8 group of 7 consecutive bunches with a maximum of 11 mA per group. The total length of the bunch train is 500 ns.

Synchrotron24 singlets

4.25 mA153 ns

T=3.672 µs

Synchrotronhybrid fill

500 ns, 88 mA

65 ps, 16 mA

1.594 µsT=3.672 µs

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Pt, 69 GPa

200 ns delay

600 ns delay

0 ns delay

Pilatus, 10000 pls600 ns width

Page 28: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

2Θ, degree

Detector window: 0.6 usScan step: 0.2 usCeO2, 105 pulses, 37 keV

0.2 µs

Synchrotronhybrid fill

500 ns, 88 mA

16 mA

Page 29: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

-0.4 0.0 0.4 0.8 1.2 1.6

0

20

40

60

80

100

120Co

unts

, a.u

Delay, microseconds

Synchrotronhybrid fill

500 ns, 88 mA

16 mA

Page 30: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

9

100

200

300

Inte

nsity

, a.u

.

Two theta, degree

HT RT

Synchrotronhybrid fill

500 ns, 88 mA

16 mALaser

-2 -1 0 1 2 3 4 5 6 7

0

2

4

Inte

nsity

, a.u

.

Time, µs

detector laser

Page 31: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

Wavelength (nm)

560 580 600 620 640 660

Rel

ativ

e In

tens

ity

1316(5) K

2741(6) KMeasurements

Planck fit

The time-resolved radiometric measurements of temperature

accumulation times: 0.1-10 s500 ns temporal resolution

Goncharov, Prakapenka et al, Rev. Sci. Instrum. 81, 113902 (2010)

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9 10 11

50

(200

)

Inte

nsity

, a.u

2Θ, degree

300 K 2600 K 3600 K(1

11) Ir, 40 GPa

2600 K300 K 3600 K

Pulsed laser heating Ir at 40 GPa

Page 33: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

TwoTheta (degree)

4 6 8 10 12 14 16

Inte

nsity

(arb

. uni

ts)

0

1

2

3

4 2400 K 3000 K 3350 K 3600 K

• Melting can be detected by observing a diffuse diffraction ring

Page 34: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

dspace/aIr

0.3 0.4 0.5 0.6 0.7 0.8 0.9

Inte

nsity

(arb

. uni

ts)

IrN2 at 42 GPa- this work IrN2 at 0 GPa -Crowhurst et al., 2007

IrIr Ir Ir

• Chemical reactivity is very fast in pulsed heating experiments• New possibilities for studying of chemical reactions

IrN2

Page 35: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

6 8 10 12 14 16 18

40

80

120In

ensi

ty, a

.u

2Θ, degree

pulse mode, 0.2s continius, 10s

Compare XRD for CeO2 collected with PILATUS detector for different exposure time:

continues 10s (divided by 50) and 0.2s averaged over 105pls, 2us window

Page 36: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

5 10 150.00

0.01

0.02

0.03

0.04In

tens

ity, a

.u.

2Θ, degree

10 pls

Detector window: 2 us or ~12 single bunches or ~2x105 photons

Standard Operating Mode, top-up: 102 mA in 24 singlets (single bunches) with a nominal current of 4.25 mA and a spacing of 153 nanoseconds between 40 ps singlets

Page 37: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

5 10 150.0

0.1

0.2

0.3

0.4In

tens

ity, a

.u.

2Θ, degree

10 pls 100 pls

Detector window: 2 us or ~12 single bunches or ~2x105 photons

Standard Operating Mode, top-up: 102 mA in 24 singlets (single bunches) with a nominal current of 4.25 mA and a spacing of 153 nanoseconds between 40 ps singlets

Page 38: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

5 10 150

10

20

30

40In

tens

ity, a

.u.

2Θ, degree

10 pls 100 pls 10000 pls

Detector window: 2 us or ~12 single bunches or ~2x105 photons

Standard Operating Mode, top-up: 102 mA in 24 singlets (single bunches) with a nominal current of 4.25 mA and a spacing of 153 nanoseconds between 40 ps singlets

Page 39: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

MAR-CCDReadout time: 3.5 sDynamic range: 16 bitsSize: Ø165 mmPixel size: 79 um

PILATUS 100KReadout time: 2.7 msDynamic range: 20 bitsSize: ~84x33 mm2

Pixel size: 172 um

Page 40: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

Dynamic x-ray probe optimization:

Synchrotronhybrid fill

500 ns, 88 mA

65 ps, 16 mA

1.594 µsT=3.672 µs

< 1 µs:

Synchrotron24 singlets

4.25 mA153 ns

T=3.672 µs2 -100 µs:

Detector: larger area, higher efficiency above 30 keV

Sample: thick, high Z, single crystal

General:

Page 41: Dynamics of Crystallization and Melting under Pressure · 2013-12-19 · Standard Operating Mode, top-up 102 mA in 24 singlets (single bunches) with a nominal current of 4.25mA and

Probing fundamental ultrafast processes

o high temperature EOSo phase transition kineticso structural dynamics & deformation o chemical reaction dynamicso transport properties (e.g., diffusion)o electronic properties

Pulse laser heating and optical spectroscopy combined with time-resolved x-ray probe

Reliable experimental conditions at higher then static T and P

CIW :A. GoncharovV. Struzhkin

GSECARS: Mark Rivers, Steve Sutton, Yanbin Wang, Peter Eng, Matt Newville, Przemek Dera, Nancy Lazarz, Fred Sopron

ESRF :I. Kantor