DS_IHW15N120R3 2.3

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Induction Heating SeriesReverse conducting IGBT with monolithic body diode

IHW15N120R3

Data sheet

Industrial Power Control

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IHW15N120R3

Induction Heating Series

Rev. 2.3, 2013-02-12

Reverse conducting IGBT with monolithic body diode

Features:

Powerful monolithic body diode with low forward voltagedesigned for soft commutation only

TRENCHSTOPTMtechnology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive

temperature coefficient in VCEsat Low EMI Qualified according to JESD-022 for target applications Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models:http://www.infineon.com/igbt/

Applications:

Inductive cooking

G

C

E

GC

E

Key Performance and Package Parameters

Type VCE IC VCEsat, Tvj=25C Tvjmax Marking Package

IHW15N120R3 1200V 15A 1.48V 175C H15R1203 PG-TO247-3

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Table of Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

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Maximum ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCE 1200 V

DC collector current, limited by TvjmaxTC= 25CTC= 100C

IC 30.015.0

A

Pulsed collector current, tplimited by Tvjmax ICpuls 45.0 A

Turn off safe operating area VCE1200V, Tvj175C - 45.0 A

Diode forward current, limited by TvjmaxTC= 25CTC= 100C

IF 30.015.0

A

Diode pulsed current, tplimited by Tvjmax IFpuls 45.0 A

Gate-emitter voltageTransient Gate-emitter voltage (tp10s, D < 0.010) VGE

2025 V

Power dissipation TC= 25CPower dissipation TC= 100C

Ptot254.0127.0

W

Operating junction temperature Tvj -40...+175 C

Storage temperature Tstg -55...+175 C

Soldering temperature,wave soldering 1.6 mm (0.063 in.) from case for 10s 260

C

Mounting torque, M3 screwMaximum of mounting processes: 3

M 0.6 Nm

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,junction - case

Rth(j-c) 0.59 K/W

Diode thermal resistance,junction - case

Rth(j-c) 0.59 K/W

Thermal resistancejunction - ambient

Rth(j-a) 40 K/W

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Switching Characteristic, Inductive Load

Value

min. typ. max.Parameter Symbol Conditions Unit

IGBT Characteristic, at Tvj= 175C

Turn-off delay time td(off) - 370 - ns

Fall time tf - 90 - ns

Turn-off energy Eoff - 1.25 - mJ

Tvj= 175C,VCC= 600V, IC= 15.0A,VGE= 0.0/15.0V,rG= 14.6, L= 180nH,C= 39pFL, Cfrom Fig. EEnergy losses include tail anddiode reverse recovery.

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Figure 1.Collector current as a function of switchingfrequency

(Tj175C, D=0.5, VCE=600V, VGE=15/0V,rG=14,6)

f, SWITCHING FREQUENCY [kHz]

IC,COLLECTORCURRENT[A]

1 10 100 10000

10

20

30

40

50

TC=80

TC=110

Figure 2.Forward bias safe operating area(D=0, TC=25C, Tj175C; VGE=15V)

VCE, COLLECTOR-EMITTER VOLTAGE [V]


1 10 100 10000.1

1

10

100

tp=1s

20s

50s

200s

1ms

10ms

DC

Figure 3.Power dissipation as a function of casetemperature(Tj175C)

TC, CASE TEMPERATURE [C]

Ptot,POWERDISSIP

ATION[W]

25 50 75 100 125 150 175

0

50

100

150

200

250

300

Figure 4.Collector current as a function of casetemperature(VGE15V, Tj175C)

TC, CASE TEMPERATURE [C]

IC,COLLECTORCU

RRENT[A]

25 50 75 100 125 150 175

0

10

20

30

40

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Figure 5.Typical output characteristic(Tj=25C)



0 1 2 30

15

30

45

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6.Typical output characteristic(Tj=175C)



0 1 2 3 40

15

30

45

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7.Typical transfer characteristic(VCE=20V)

VGE, GATE-EMITTER VOLTAGE [V]

IC,COLLECTORCU

RRENT[A]

2 4 6 8 10 12

0

15

30

45

Tj=25CTj=175C

Figure 8.Typical collector-emitter saturation voltage asa function of junction temperature(VGE=15V)

Tj, JUNCTION TEMPERATURE [C]

VCE(sat),COLLECTOR-EMITTE

RSATURATION[V]

0 25 50 75 100 125 150 175

1.0

1.5

2.0

2.5

3.0

IC=7.5AIC=15AIC=30A

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Figure 13.Typical switching energy losses as afunction of collector current

(ind. load, Tj=175C, VCE=600V, VGE=15/0V,rG=14,6, test circuit in Fig. E)

IC, COLLECTOR CURRENT [A]

E,SWITCHI

NGENERGYLOSSES[mJ]

0 5 10 15 20 25 300.0

0.5

1.0

1.5

2.0

2.5

Eoff

Figure 14.Typical switching energy losses as afunction of gate resistor

(ind. load, Tj=175C, VCE=600V, VGE=15/0V,IC=15A, test circuit in Fig. E)

rG, GATE RESISTOR []

E,SWITCHI

NGENERGYLOSSES[mJ]

10 20 30 40 501.0

1.1

1.2

1.3

1.4

1.5

1.6

Eoff

Figure 15.Typical switching energy losses as afunction of junction temperature(ind load, VCE=600V, VGE=15/0V, IC=15A,rG=14,6, test circuit in Fig. E)


E,SWITCHINGENERGYLOSSES[mJ]

25 50 75 100 125 150 175

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

Eoff

Figure 16.Typical switching energy losses as afunction of collector emitter voltage(ind. load, Tj=175C, VGE=15/0V, IC=15A,rG=14,6, test circuit in Fig. E)


E,SWITCHINGENERGYLOSSES[mJ]

400 500 600 700 800 900 1000

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Eoff

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Figure 17.Typical turn off switching energy loss forsoft switching

(ind load, VCE=600V, VGE=15/0V, IC=15A,RG=14,6, test circuit in Fig. E)

dv/dt, VOLTAGE SLOPE [V/s]

E,SWITCHI

NGENERGYLOSSES[mJ]

100 1000 1E+40.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Tj=25CTj=175C

Figure 18.Typical gate charge(IC=15A)

QGE, GATE CHARGE [nC]

VGE,GATE

-EMITTERVOLTAGE[V]

0 25 50 75 100 125 150 1750

2

4

6

8

10

12

14

16

240V960V

Figure 19.Typical capacitance as a function ofcollector-emitter voltage(VGE=0V, f=1MHz)


C,CAPACITANC

E[pF]

0 10 20 30

10

100

1000

CissCossCrss

Figure 20.IGBT transient thermal impedance(D=tp/T)

tp, PULSE WIDTH [s]

ZthJC,TRANSIENTTHERMAL

IMPEDANCE[K/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 1

0.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:i[s]:

14.6E-32.4E-5

20.14313.3E-4

30.20973.1E-3

40.21850.01636424

50.012047620.1753518

61.9E-31.713276

72.1E-44.662402

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Figure 21.Diode transient thermal impedance as afunction of pulse width

(D=tp/T)

tp, PULSE WIDTH [s]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:i[s]:

14.6E-32.4E-5

20.14313.3E-4

30.20973.1E-3

40.21850.01636424

50.0120.1753518

61.9E-31.713276

72.1E-44.662402

Figure 22.Typical diode forward current as a functionof forward voltage

VF, FORWARD VOLTAGE [V]

IF,FOR

WARDCURRENT[A]

0 1 2 30

15

30

45

Tj=25CTj=175C

Figure 23.Typical diode forward voltage as a functionof junction temperature


VF,FORWARDVOLTAGE[V]

0 25 50 75 100 125 150 175

1.0

1.5

2.0

2.5

IC=7.5AIC=15AIC=30A

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PG-TO247-3

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t

a

a

b

b

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Revision History

IHW15N120R3

Revision: 2013-02-12, Rev. 2.3

Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2009-04-01 -

2.1 2009-05-27 -

2.2 2011-04-05 Pack. draw. rev. 05, marking update

2.3 2013-02-12 Layout change

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Published byInfineon Technologies AG81726 Munich, Germany81726 Mnchen, Germany 2013 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding theapplication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systemsand/or automotive, aviation and aerospace applications or systems only with the express written approval of InfineonTechnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life

support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may beendangered.

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