Driver Amplifier BFQ790 for GSM900 Cellular Repeater ... - Компэл€¦ · Key performance...

1 Revision 2.0, 2016-01-15

About this document

Scope and purpose

Application note describes a driver amplifier circuit that uses Infineon’s medium-power SiGe bipolar

transistor BFQ790. This driver amplifier is designed for GSM900 (cellular repeaters) appplications.

1. This application note presents the measurement results of a driver amplifier design for 900 MHz

application purposes.

2. BFQ790 is a single stage driver amplifier provides high linearity and high gain.

3. Key performance paramerters achieved (at 915 MHz)

a. Gain = 20 dB

b. Input return loss = 11 dB

c. Output return loss =10 dB

d. Output P1dB = 27 dBm

e. Output IP3 = 38.7 dBm

Driver Am pli f ier B FQ 790 for G S M9 00

Cel l ular R epea ter Ap pl i ca t i on s

A p p l i c a t i o n N o t e : A N 4 6 0

BFQ790 Driver Amplifier for GSM900 Application

Application Note AN460 2 Revision 2.0, 2016-01-15

Table of Contents

Table of Contents ........................................................................................................................ 2

List of Figures ............................................................................................................................. 3

1 Introduction ............................................................................................................... 4 1.1 BFQ790 as Driver Amplifier for GSM900 Cellular Repeaters .............................................................. 4

1.2 Infineon Driver Amplifier Family ......................................................................................................... 5

2 Driver Amplifier BFQ790 for GSM900 Cellular Repeater Applications ................................ 6 2.1 Performance Overview ........................................................................................................................ 6

3 Measurement Graphs .................................................................................................. 8

4 Evaluation Board and Layout Information ................................................................... 13

5 Authors .................................................................................................................... 14



List of Figures

Figure 1 Schematic of the BFQ790 Application Circuit for GSM900................................................................. 7 Figure 2 Insertion Power Gain of the BFQ790 Driver Amplifier ........................................................................ 8 Figure 3 Input Matching of the BFQ790 Driver Amplifier ................................................................................. 8 Figure 4 Input Matching of the BFQ790 Driver Amplifier ................................................................................. 9

Figure 5 Output Matching of the BFQ790 Driver Amplifier............................................................................... 9 Figure 6 Output Matching of the BFQ790 Driver Amplifier............................................................................. 10 Figure 7 Reverse Isolation of the BFQ790 Driver Amplifier ............................................................................ 10

Figure 8 Output 1dB Compression Point ........................................................................................................ 11 Figure 9 Carrier to IM3 Ratio of the BFQ790 Driver Amplifier ......................................................................... 11

Figure 10 Stability Mu1, Mu2 - factors of the BFQ790 Driver Amplifier ............................................................ 12

Figure 11 Photo of Evaluation Board (overview).............................................................................................. 13 Figure 12 Photo of Evaluation Board (detailed view) ...................................................................................... 13

List of Tables

Table 1 Summary of Measurement Results ..................................................................................................... 6 Table 2 Bill-of-Materials ................................................................................................................................... 7

1) The graphs are generated with the simulation program AWR Microwave Office®.



1 Introduction

1.1 BFQ790 as Driver Amplifier for GSM900 Cellular Repeaters

In the procedure normally used for effecting radio transmissions between base stations and cellpnes, when the strength of the signal from the base station falls below minimum levels (as the mobilephone moves from

one point to another), the mobilephone does not transfer the transmission in progress to another station without interruption. Now, thanks to the capability of transmitting data between bas station and mobile

phones, a transmission can be transferred without interruption from a base station to an adjacent fixed station which is closer to the mobile phone. Besides an insufficient number of cells, the following factors - Road, railway and subway tunnels - Buildings that are especially well-shielded - Radio-electric shadow areas (city centres) - Mountainous or hilly areas - Zones without cells, where the coverage is necessarily limited. The situation involving tunnels is the most

clear-cut case. The other cases can be resolved by increasing the density of the cells; however, this solution may not be advantageous because the radio-frequency signals may be reflected (especially in mountainous or shadow areas), which causes spurious handovers and probable losses of transmissions.

As was described above, the coverage limits of radio base stations can be extended by using cellular

repeaters that retransmit a band of carriers from the nearest radio base station into the area or environment

to be served. The simplest method for reaching this goal is to use a radio reception/transmission antenna pointed toward the nearest radio base station, a bi-directional amplifier and a radiating element (for example, an antenna) whose spatial transmission characteristics (range, angle of aperture and angle of

curvature) can be controlled sufficiently.

As can be seen in figure 1, an antenna-antenna type of cellular repeater system is made up of an RBS antenna, a radio-frequency amplifier and an RMA antenna.

The signal received by the RBS antenna (from the closest RBS, which is called the "donor RBS"), is amplified and sent to the RMA antenna, which is pointed toward the shadow area to be "illuminated". The signal from

the mobile station, which is received by the RMA antenna, is treated in the same way and sent to the donor

RBS.

RBS ANTENNA RMA ANTENNA

DUPLEXER DUPLEXER



Figure 1 Bi-directional cellular repeater

1.2 Infineon Driver Amplifier Family

The driver amplifier, also known as a gain block, is an important functional block in RF transceiver systems requiring high output power. The Power Amplifier (PA), the final stage of a signal-amplifier chain, requires a certain input power level to operate in the linear mode, which usually cannot be delivered by the transceiver IC directly. In these cases, external one or two stage driver amplifiers are required. Driver amplifiers are

generally operated in linear Class-A mode to enable high linearity and high gain, thereby keeping spurious

signals generated by the PA low by reducing intermodulation products. Class-A amplifiers are also the right choice for broadband operation at low power levels.

BFQ790 and BFP780 are general-purpose medium-power transistors in Infineon’s Silicon Germanium (SiGe) product portfolio for wireless infrastructure applications. These applications include mobile basestation

transceivers, cellular repeaters, the industrial, scientic and medical (ISM) radio band amplifiers, and test equipment. Their operating frequency range can be as high as 3.6 GHz, and the application circuit can be

optimized for specific frequency bands with external matching components. The BFQ790 is a single-stage driver amplifier with very high linearity. Its output 1dB compression point is 27

dBm. The device is housed in the halogen-free industry-standard package SOT89. The high thermal conductivity of silicon substrate and the low thermal resistance of the package add up to a thermal

resistance of only 35 K/W, which leads to moderate junction temperatures even at high dissipated power values. The proper die attach with good thermal contact is 100% tested, so that there is minimum variation of thermal properties. The device is based on Infineon's reliable and cost-effective NPN SiGe technology

running in high volume. The collector design allows safe operation with 5 V supply voltage. The BFQ790 is

very rugged. A special collector design protects it from thermal runaway secondary breakdown, which makes it rugged when exposed to mismatch at the output. The special design of the emitter/base diode

makes it robust and allows for high maximum RF input power.

In this application note, the driver application cirucit of BFQ790 for ISM Band (890 - 960 MHz) and its

measurement results are presented. The BFQ790 driver provides 20 dB gain in the frequency range of 890 to 960 MHz. The output 1dB compression point (OP1dB) is 27 dBm measured at 915 MHz. Besides, in two-tone test with tone spacing of 1 MHz, the output third order intercept point (OIP3) reaches 38.75 dBm.



2 Driver Amplifier BFQ790 for GSM900 Cellular Repeater

Applications

2.1 Performance Overview

Device: BFP740FESD

Application: Driver Amplifier BFQ790 for GSM900 Cellular Repeater Applications

PCB Marking: M15211

Table 1 Summary of Measurement Results

Parameter Symbol Value Unit Comments/Test Conditions

DC Voltage VCC 5 V

DC Current ICq 260 mA

Frequency Freq 890 - 960 MHz

Gain G 20 dB Vcc = 5 V, Icc = 260 mA, the PCB and

SMA losses (0.1 dB) are substracted.

Input Return Loss RLin 11.5 dB

Output Return Loss RLout 10 dB

Reverse Isolation IRev 30 dB

Output P1dB OP1dB 27 dBm Measured at 915 MHz

Output IP3 OIP3 38.7 dBm Power @ Input: 14 dBm

f1 = 915 MHz, f2 = 916 MHz

Stability µ1, µ2 > 1 -- Measured up to 10 GHz



2.2 Schematic and Bill-of-Materials

Figure 1 Schematic of the BFQ790 Application Circuit for GSM900

Table 2 Bill-of-Materials

Symbol Value Unit Size Manufacturer Comment

Q1 BFQ790 SOT89 Infineon SiGe driver transistor

C1 8 pF 0402 Various Input matching & DC blocking

C2 5.6 pF 0402 Various Output matching & DC blocking

C3 47 nF 0402 Various RF bypass

C4 56 pF 0402 Various RF bypass

C5 10 nF 0402 Various RF bypass

L1 2 nH 0402 Murata LQG Input matching

L2 3 nH 0402 Murata LQG Input matching

L3 5.6 nH 0402 Murata LQG RF chock & Input matching

R1 100 Ω 0402 Various DC biasing

R2 400 Ω 0402 Various DC biasing



3 Measurement Graphs

Figure 2 Insertion Power Gain of the BFQ790 Driver Amplifier

Figure 3 Input Matching of the BFQ790 Driver Amplifier

500 1000 1500 2000

Frequency (MHz)

Gain

-5

0

5

10

15

20

25

S2

1 (

dB

) 960 MHz19.29 dB

960 MHz19.7 dB

960 MHz20.11 dB

890 MHz19.38 dB

890 MHz19.82 dB

890 MHz20.24 dB

@ -10°C

@ +25°C

@ +55°C

500 1000 1500 2000

Frequency (MHz)

Input Return Loss

-25

-20

-15

-10

-5

0

5

10

S1

1 (

dB

)

960 MHz-11.45 dB

890 MHz-11.87 dB

960 MHz-11.57 dB

890 MHz-12.29 dB

960 MHz-11.73 dB

890 MHz-12.76 dB

@ -10°C

@ +25°C

@ +55°C



Figure 4 Input Matching of the BFQ790 Driver Amplifier

Figure 5 Output Matching of the BFQ790 Driver Amplifier

0 1.0

1.0

-1.0

10.0

10.0

-10.0

5.0

5.0

-5.0

2.0

2.0

-2.0

3.0

3.0

-3.0

4.0

4.0

-4.0

0.2

0.2

-0.2

0.4

0.4

-0.4

0.6

0.6

-0.6

0.8

0.8

-0.8

Input MatchingSwp Max

1000MHz

Swp Min

800MHz

960 MHzr 0.642132x -0.230808

890 MHzr 0.920645x 0.442214

890 MHzr 0.919353x 0.46648

960 MHzr 0.642484x -0.244767

890 MHzr 0.915795x 0.489307

960 MHzr 0.644965x -0.259193

@ -10°C

@ +25°C

@ +55°C

500 1000 1500 2000

Frequency (MHz)

Output Return Loss

-20

-15

-10

-5

0

5

10

S2

2 (

dB

)

960 MHz-9.249 dB

890 MHz-14.4 dB

960 MHz-9.904 dB890 MHz

-14.6 dB

960 MHz-10.7 dB

890 MHz-14.85 dB

@ -10°C

@ +25°C

@ +55°C



Figure 6 Output Matching of the BFQ790 Driver Amplifier

Figure 7 Reverse Isolation of the BFQ790 Driver Amplifier

0 1.0

1.0

-1.0

10.0

10.0

-10.0

5.0

5.0

-5.0

2.0

2.0

-2.0

3.0

3.0

-3.0

4.0

4.0

-4.0

0.2

0.2

-0.2

0.4

0.4

-0.4

0.6

0.6

-0.6

0.8

0.8

-0.8

Output MatchingSwp Max

1000MHz

Swp Min

800MHz

960 MHzr 0.67382x -0.363788

890 MHzr 1.33385x 0.227477

890 MHzr 1.37864x 0.18785

960 MHzr 0.633758x -0.375389

890 MHzr 1.41614x 0.139616

960 MHzr 0.5972x -0.380519

@ -10°C

@ +25°C

@ +55°C

0 2000 4000 6000 8000 10000

Frequency (MHz)

Reverse Isolation

-100

-80

-60

-40

-20

S1

2 (

dB

)

960 MHz-29.646 dB

890 MHz-30.321 dB

890 MHz-30.259 dB

960 MHz-29.637 dB

960 MHz-29.709 dB

890 MHz-30.293 dB

@ -10°C

@ +25°C

@ +55°C



Figure 8 Output 1dB Compression Point

Figure 9 Carrier to IM3 Ratio of the BFQ790 Driver Amplifier

10 15 20 25 28

Output Power (dBm)

OIP1dB

18

19

20

21

22

Ga

in (

dB

)

26.7 dBm18.7

27.18 dBm19

27.7 dBm19.4

10 dBm19.7

10 dBm20

10 dBm20.4

@ -10°C

@ +25°C

@ +55°C

10 11 12 13 14 15 16 17

Output Power (dBm)

CIMR3

30

40

50

60

70

Carr

ier

to I

MP

3 R

atio

(dB

c) 14 dBm

54.5

14 dBm49.5

14 dBm49

Left @ -10°C

Right @ -10°C

Left @ +25°C

Right @ +25°C

Left @ +55°C

Right @ +55°C



Figure 10 Stability Mu1, Mu2 - factors of the BFQ790 Driver Amplifier

100 2100 4100 6100 8100 10000

Frequency (MHz)

Stability

0

0.5

1

1.5

2

Mu

1, M

u2

Mu1 @ -10°C

Mu2 @ -10°C

Mu1 @ +25°C

Mu2 @ +25°C

Mu1 @ +55°C

Mu2 @ +55°C



4 Evaluation Board and Layout Information In this application note, the following PCB is used:

PCB Marking: M15211

PCB material: FR4

r of PCB material: 4.6

Figure 11 Photo of Evaluation Board (overview)

Figure 12 Photo of Evaluation Board (detailed view)

Vias

Copper 35 µm,

FR4 Core, 510 µm

FR4 Preg, 360 µm



5 Authors Dr. Olim Hidayov, RF Application Engineer of Business Unit “RF and Sensors”

Revision History

Major changes since the last revision

Page or Reference Description of change

Published by

Infineon Technologies AG

81726 Munich, Germany

© 2016 Infineon Technologies AG. All Rights Reserved.

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aspect of this document?

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