Digital Integrated Circuits (83-313) · Coupling Waveforms 21 Simulated coupling for C adj =C...

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Digital Integrated Circuits (83-313) Semester B, 2015-16 Lecturer: Adam Teman TAs: Itamar Levi, Robert Giterman 1 Lecture 5: Interconnect

Transcript of Digital Integrated Circuits (83-313) · Coupling Waveforms 21 Simulated coupling for C adj =C...

Page 1: Digital Integrated Circuits (83-313) · Coupling Waveforms 21 Simulated coupling for C adj =C victim Aggressor Victim (undriven): 50% Victim (half size driver): 16% Victim (equal

Digital Integrated Circuits

(83-313)

Semester B, 2015-16

Lecturer: Adam Teman

TAs: Itamar Levi, Robert Giterman 1

Lecture 5:

Interconnect

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21

3 4 5

What will we learn today?

2

A First Glance at

InterconnectCapacitance Resistance Interconnect

ModelingWire

Scaling

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The Wire

3

transmitters receivers

schematics physical

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Wire Models

4

All-inclusive modelCapacitance-only

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Impact of Interconnect Parasitics

5

Interconnect parasitics affect all the metrics we care about

Reliability

Performance

Power Consumption

Cost

Classes of parasitics

Capacitive

Resistive

Inductive

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Modern Interconnect

6

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12

3 4 5

What will we learn today?

7

CapacitanceA First

Glance at

InterconnectResistance Interconnect

ModelingWire

Scaling

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Capacitance of Wire Interconnect

8

VDDVDD

VinVout

M1

M2

M3

M4Cdb2

Cdb1

Cgd12

Cw

Cg4

Cg3

Vout2

Fanout

Interconnect

VoutVin

CL

SimplifiedModel

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Capacitance: The Parallel Plate Model

9

How can we reduce this capacitance?

Dielectric

Substrate

L

W

H

tdi

Electrical-field lines

Current flow

dipp

di

c WLt

Typical numbers:• Wire cap ~0.2 fF/um• Gate cap ~2 fF/um• Diffusion cap ~2 fF/um

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Permittivity

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Fringing Capacitance

/ 2w W H

11

W - H/2H

+

(a)

(b)

W - H/2H

+

(a)

(b)

F mm

2 2

log

di dipp fringe

di di

W HC c c

t t H

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Fringing versus Parallel Plate

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(from [Bakoglu89])

0.05fringeC fFedge m

fringe

PP

C L

C W L

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A simple model for deriving wire cap

13

Wiring capacitances in 0.25μm

_ 2wire parallel plate fringeC C W L C L

Bottom Plate

Top

Pla

te

aF/µm2

aF/µm

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Interwire Capacitance

14

fringing parallel

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Impact of Interwire Capacitance

15

(from [Bakoglu89])

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Coupling Capacitance and Delay

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CC1

CC2CL

tot LC C

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Coupling Capacitance and Delay

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CC1

CC2CL

0

1

0

1

1 2tot L C CC C C C

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Coupling Capacitance and Delay

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CC1

CC2CL

1 22tot L C CC C C C

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Example – Coupling Cap

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A pair of wires, each with a capacitance to ground of 5pF, have a 1pF coupling capacitance between them.

A square pulse of 1.8V (relative to ground) is connected to one of the wires.

How high will the noise pulse be on the other wire?

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Example – Coupling Cap

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Draw an Equivalent Circuit:

2

2

1.8 10.3

1 5

in coupled

C

coupled

V C pV V

C C p p

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Coupling Waveforms

21

Simulated coupling for Cadj=Cvictim

Aggressor

Victim (undriven): 50%

Victim (half size driver): 16%

Victim (equal size driver): 8%

Victim (double size driver): 4%

t (ps)

0 200 400 600 800 1000 1200 1400 1800 2000

0

0.3

0.6

0.9

1.2

1.5

1.8

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Shielding

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Feedthrough Cap

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Measuring Capacitance

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13

2 4 5

What will we learn today?

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ResistanceA First

Glance at

Interconnect

Capacitance Interconnect

ModelingWire

Scaling

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Wire Resistance

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W

L

H

R =

H W

L

Sheet ResistanceRo

R1 R2

100m

Rsquare

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Interconnect Resistance

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,sq sq

L L LR R R

A H W W H

More LayersMetal Bulk resistivity

(*cm)

Silver (Ag) 1.6

Copper (Cu) 1.7

Gold (Au) 2.2

Aluminum (Al) 2.8

Tungsten (W) 5.3

Molybdenum (Mo) 5.3

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Sheet Resistance

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Typical sheet resistances for 180 nm process

Layer Sheet Resistance

(/)

N-Well/P-Well 1000-1500

Diffusion (silicided) 3-10

Diffusion (no silicide) 50-200

Polysilicon (silicided) 3-10

Polysilicon (no silicide) 50-400

Metal1 0.08

Metal2 0.05

Metal3 0.05

Metal4 0.03

Metal5 0.02

Metal6 0.02

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Polycide Gate MOSFET

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n+n+

SiO2

PolySilicon

Silicide

p

Silicides: WSi 2, TiSi 2, PtSi 2 and TaSi

Conductivity: 8-10 times better than Poly

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Contact Resistance

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Contact/Vias add extra resistanceSimilar to changing between roads on the way to a destination…

Contact resistance is generally 2-20 ohms

Make contacts biggerBUT… current “crowds” around the perimeter of a contact.

There are also problems in deposition…

Contacts/Vias have a maximum practical size.

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Dealing with Resistance

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Selective Technology ScalingDon’t scale the H

Use Better InterconnectMaterials

reduce average wire-length

e.g. copper, silicides

More Interconnect Layersreduce average wire-length

Minimize Contact ResistanceUse single layer routing

When changing layers, use lots of contacts.

90nm Process

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Multiple Contacts to Diffusion?

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14

2 3 5

What will we learn today?

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Interconnect

Modeling

A First

Glance at

Interconnect

Capacitance Resistance Wire

Scaling

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The Ideal Model

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In schematics, a wire has no parasitics:

The wire is a single equipotential region.

No effect on circuit behavior.

Effective in first stages of design and for very short wires.

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The Lumped Model

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Vout

Driver

cwire

Vin

Clumped

RdriverVout

Ron=1kΩ-10kΩ

Rwire=1Ω

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The Distributed RC-line

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But actually, our wire is a distributed entity.

We can find its behavior by breaking it up into small RC segments.

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The Distributed RC-line

3

7

2

2

rcL 0.38pdt RC

Quadratic dependence on wire length

The lumped model is

pessimistic

1 1i i i iC

V V V VI

rdx rdx

idV

cdxdt

2

2

i idV Vrc

dt x

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Step-response of RC wire

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Step-response of RC wire as a function of time and space

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Elmore Delay Approximation

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Solving the diffusion equation for a given network is complex.

Elmore proposed a reasonably accurate method to achieve an

approximation of the dominate pole.

1 1 1 2 2 1 2 3 3elmore R C R R C R R R C

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Elmore Delay Approximation

40

For a complex network use the following method:

Find all the resistors on the path from in to out.

For every capacitor:

Find all the resistors on the path from the input to the capacitor.

Multiply the capacitance by the resistors that are also on the path to out.

The dominant pole is approximately the sum of all these time

constants.

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Simple Elmore Delay Example

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1 1 1 2 2 1 2elmore R C R R C R C

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General Elmore Delay Example

42

1 1 1 2 1 3 3 1 3 4 1 3elmore i iR C R C R R C R R C R R R C

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Generalized Ladder Chain

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Lets apply the Elmore approximation for our original distributed wire.

Divide the wire into N equal segments of dx=L/N length with capacitance cdx and resistance rdx.

2 ..N

L L L Lc r r Nr

N N N N

2

2 ..L

rc rc NrcN

2

2

1

2

N NrcL

N

2

lim2 2

DN

rcL RC

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RC-Models

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T-ModelPie Model

Pie-2 Model

Pie-3 Model

T-2 Model

T-3 Model

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Wire Delay Example

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Inverter driving a wire and a load cap.

2 2W W

driver d inv ext inv w

C CC R C R R

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A different look…

46

Again we’ll look at our driver with a distributed wire.

For the driver resistance, we can lump the as a capacitor.

For the wire resistance, we will use

the distributed time constant.

For the load capacitance, we can

lump the wire and driver resistance.

0.2

0.1

w

fFC

m

R

0.69 0.38 0.69D inv d W W W inv w LR C C R C R R C

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Repeaters

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Buffer Trees

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15

2 3 4

What will we learn today?

49

Wire

Scaling

A First

Glance at

Interconnect

Capacitance Resistance Interconnect

Modeling

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Wire Scaling

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We could try to scale interconnect at the same rate (S) as device

dimensions.

This makes sense for local interconnect that connects smaller devices/gates.

But global interconnections, such as clock signals, buses, etc. won’t scale in

length.

Length of global interconnect is proportional to die size or system

complexity.

Die Size has increased by 6% per year (X2 @10 years)

Devices have scaled, but complexity has grown!

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Nature of Interconnect

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Local Wire Scaling

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Looking at local interconnect:

W, H, t, L all scale at 1/S

C=LW/t1/S

R=L/WH S

RC=1

Reminder – Full Scaling of transistors:

» Ron=VDD/Ion α 1

» tpd=RonCg α 1/S

So the delay of local interconnect still increases relative to transistors!

So the delay of local interconnect

stays constant.

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Local Wire Scaling – Full Scaling

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What about fringe cap?

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Local Wire Scaling - Constant Thickness

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Thickness wasn’t scaled!

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Local Wire Scaling – Interwire Capacitance

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Without scaling height, coupling gets much worse.

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Global Wire Scaling

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Looking at global interconnect:

W, H, t scale at 1/S

L doesn’t scale!

C=LW/t1

R=L/WH S2

RC=S2 !!!

And if chip size grows, L actually increases!

Long wire delay increases

quadratically!!!

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Global Wire Scaling – Constant Thickness

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Leave thickness constant for global wires

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Wire Scaling

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So whereas device speed increases with scaling:

Local interconnect speed stays constant.

Global interconnect delays increase quadratically.

Therefore:

Interconnect delay is often the limiting factor for speed.

What can we do?

Keep the wire thickness (H) fixed.

This would provide 1/S for local wire delays

and S for constant length global wires.

But fringing capacitance increases, so this is optimistic.

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Wire Scaling

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What is done today?

Low resistance metals.

Low-K insulation.

Low metals (M1, M2) are used for local interconnect,

so they are thin and dense.

Higher metals are used for global routing, so they are

thicker, wider and spaced farther apart.

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Modern Interconnect

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Intel 90 nm Stack

[Thompson02]

Intel 45 nm Stack

[Moon08]

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Further Reading

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J. Rabaey, “Digital Integrated Circuits” 2003, Chapter 4

E. Alon, Berkeley EE-141, Lectures 15,16 (Fall 2009)http://bwrc.eecs.berkeley.edu/classes/icdesign/ee141_f09/

B. Nicolic, Berkeley EE-241, Lecture 3 (Spring 2011) http://bwrc.eecs.berkeley.edu/classes/icdesign/ee241_s11