Diffusion - courses.washington.educourses.washington.edu/.../luscombe/Week3andWeek4.pdf ·...

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1 Diffusion Diffusion - Mass transport by atomic motion Mechanisms Gases & Liquids – random (Brownian) motion Solids – vacancy diffusion or interstitial diffusion Interdiffusion: In an alloy, atoms tend to migrate from regions of high conc. to regions of low conc. Self-diffusion: In an elemental solid, atoms also migrate.

Transcript of Diffusion - courses.washington.educourses.washington.edu/.../luscombe/Week3andWeek4.pdf ·...

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Diffusion

Diffusion - Mass transport by atomic motion

Mechanisms•Gases & Liquids – random (Brownian) motion•Solids – vacancy diffusion or interstitial diffusion

Interdiffusion: In an alloy, atoms tend to migrate from regions of high conc. toregions of low conc.

Self-diffusion: In an elemental solid, atoms also migrate.

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Interdiffusion

Initially

Adapted fromFigs. 5.1 and5.2, Callister7e.

After some time

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Self-diffusion

Label some atoms After some time

A

B

C

DA

B

C

D

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Diffusion mechanisms

Vacancy Diffusion:• atoms exchange with vacancies• applies to substitutional impurities atoms• rate depends on: --number of vacancies --activation energy to exchange.

increasing elapsed time

Conditions:

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Diffusion simulation

• Simulation of interdiffusion across aninterface:

• Rate of substitutional diffusion depends on: --vacancy concentration --frequency of jumping.

(Courtesy P.M. Anderson)

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Diffusion flux

How do we quantify the amount or rate of diffusion?

Measured empirically• Make thin film (membrane) of known surface area• Impose concentration gradient• Measure how fast atoms or molecules diffuse through the membrane

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Steady-state diffusion

C1

C2

x

C1

C2

x1 x2

Flux proportional to concentration gradient =dx

dC

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Diffusion and temperature

• Diffusion coefficient increases with increasing T.

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Diffusion paths

Diffusion FASTER for...

• open crystal structures

• materials w/secondary bonding

• smaller diffusing atoms

• lower density materials

Diffusion SLOWER for...

• close-packed structures

• materials w/covalent bonding

• larger diffusing atoms

• higher density materials

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Elastic properties of materials

• Poisson's ratio, ν:

–ν > 0.50 density increases

–ν < 0.50 density decreases (voids form)

εL

ε

- ν

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Plastic deformation

• Simple tension test:

engineering stress, σ

engineering strain, ε

Elastic+Plastic at larger stress

permanent (plastic) after load is removed

εp

plastic strain

Elastic

initially

Adapted from Fig. 6.10 (a), Callister 7e.

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Yield strength, σy

Adapted from Fig. 6.10 (a), Callister 7e.

tensile stress, σ

engineering strain, ε

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Tensile strength, TS

• Metals: occurs when noticeable necking starts.• Polymers: occurs when polymer backbone chains are aligned and about to break.

σy

strain

Typical response of a metal

eng

inee

ring

stre

ss

engineering strain

• Maximum stress on engineering stress-strain curve.

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Ductility

• Plastic tensile strain at failure:

Adapted from Fig. 6.13,Callister 7e.

Engineering tensile strain, ε

Engineering tensile stress, σ

smaller %EL

larger %ELLf

AoAf

Lo

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Toughness

• Energy to break a unit volume of material• Approximate by the area under the stress-strain curve.

Adapted from Fig. 6.13,Callister 7e.

Engineering tensile strain, ε

Engineering tensile stress, σ

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Dislocation and plastic deformation

• Cubic & hexagonal metals - plastic deformation by plastic shear or slip whereone plane of atoms slides over adjacent plane by defect motion (dislocations).

Adapted from Fig. 7.1,Callister 7e.

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Dislocation motion

Edge dislocation

Screw dislocation

Adapted from Fig. 7.2,Callister 7e.

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Deformation mechanisms

Adapted from Fig.7.6, Callister 7e.

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Slip in single crystals

• Crystals slip due to a resolved shear stress, τR.

• Applied tension can produce such a stress.

slip planenormal, ns

Resolved shear stress:

slipdire

ction

AS

τR

τR

FS

slipdire

ction

Relation between σ and τR

λF

FS

φnS

AS

A

Applied tensile stress:

slipdire

ction

FA

F

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Critical resolved shear stress

• Condition for dislocation motion:

• Crystal orientation can make it easy or hard to move dislocation

σ σ σ

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Slip motion in polycrystals

• Stronger - grain boundaries pindeformations

• Slip planes & directions (λ, φ) changefrom one crystal to another.

• τR will vary from one crystal to another.

• The crystal with the largest τR yieldsfirst.

• Other (less favorably oriented) crystalsyield later.

Adapted from Fig.7.10, Callister 7e.(Fig. 7.10 iscourtesy of C.Brady, NationalBureau ofStandards [now theNational Institute ofStandards andTechnology,Gaithersburg, MD].)

σ

300 µm

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Strategies for strengthening: grain size reduction

• Grain boundaries are barriers toslip.

• Barrier "strength” increases withincreasing angle of misorientation.

• Smaller grain size: more barriersto slip.

• Hall-Petch Equation:

Adapted from Fig. 7.14, Callister 7e.(Fig. 7.14 is from A Textbook of MaterialsTechnology, by Van Vlack, PearsonEducation, Inc., Upper Saddle River, NJ.)

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Strategies for strengthening: solid solutions

Adapted from Fig. 7.4,Callister 7e.

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Effects of stress at dislocations

Adapted from Fig.7.5, Callister 7e.

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Strengthening by alloying

Adapted from Fig.7.17, Callister 7e.

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Strengthening by alloying

Adapted from Fig.7.18, Callister 7e.

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Strategies for strengthening: Cold work (%CW)

• Room temperature deformation.

• Common forming operations change the cross sectional area:

Adapted from Fig.11.8, Callister 7e.

-Forging

Ao Ad

force

dieblank

force-Drawing

tensile force

AoAddie

die

-Extrusion

ram billet

container

containerforce die holder

die

Ao

Adextrusion

-Rolling

roll

AoAd

roll

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Impact of cold work

Adapted from Fig. 7.20,Callister 7e.

As cold work is increased