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0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 1 0

/

Figure 4. Typical S1 and SZ2 vs. Frequency for the Figure 5. Typical SZ1 and S12 vs. Frequency for the 35821EforVo=15V, lc=15mA. . 35821 E for VCE = 15V, lC= 15 rnA.

C O M M O N EMITTER S - P h R f i M E T E R S

0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 1 0

Figure 6. Typical S1 and SZ2 vs. Frequency for the Figure 7. Typical S2, and S12 vs. Frequency for the 35821 B for Vm = 15V, I c= 15 rnA. 35821 B for VCB = 15V, l C = 15 rnA.

5

745 : Normalized Smith Chart

I

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Low-Noise XBand GaAs MESFET

a VERY HIGH fMAX 55 GHz

@ HIGH MAXIMUM AVAILABLE GAIN 17 dB a t 4 GHz 12 dB a t 8 GHz 10 dB a t 12 GHz

@ LOW NQlSE FIGURE 1.4 dB a t 4 GHz 2.5 dB a t 8 GHz 3.5 dB a t 12 GHz

a HlGH ASSQCDATED GAIN 13.5 dB a t 4 GHz 10.5 dB a t 8 G H z 7.0 dB a t 12 GHz

The NE244 is a gallium arserride (GaAs) nchannel field effect transistor (FET) employing a 1 . 0 ~ long Schottky- barrier gate. The device is available as a chip(NE24400) and in two rugged hermetically sealed metal-ceramic stripline packages. The chip offers exceptionally low noise figures and high associated gains, making it ideal for microwave integrated circuits operating up to 12 GHz. The chip's gate and channel are glassivated with a thin layer of Si02 for mechanical protection only. The NE24483 is a low cost packaged device for industrial, miiitary, and space appli- cations. The NE24406 is in a low-loss, hi-re1 package de- signed for space applications. NEC uses the highest grade materials and the latest design and production techniques to manufacture the best devices available. Reliability is assured by quality control and test procedures patterned

PROVEN RELIABILITY AND STABlklTY after MIL-S-19500 and MI L-STD-750. Long term perform- ance stability is zssured by N EC proprietary wafer selection

@ 1.0 MlCRBN GATE and processing. The exceptionally high gain, associated with

@ SPACE QUALlFlED +. a very low noise figure, has made the NE244 the industry's standard. The NE244 offers the engineer the best in performance, reliability and quality.

Nippon Electric Co,Ltd

NE244, LOW NOISE X-BAND GaAs FEB

ElWRICAL CHARAmERISIGS d& =2FO N E24400 ME24406 N E24483

EIAJ1 REGISTERED NUMBER 2SK85

SEE NOTES ON BACK PAGE

PARAMETER

All DC tests performed per MILSTD-750 I

100% Group A Tests Storage (125OC - 24 hrs)

100% Environmental Tests (Heat Cycle, Shock, Vibration, Centrifuge)

100% Power Burn-in at P,max (TCh=125OC,

(Tests may vary depending T, =10O0C - 168 hrs) upon package style.) 100% Group A Tests

I I 100 1 mA /

I

BOWER DERATING CURVES DC PERFGRMANCE

Drain Current

AMBIENT TEMPERATURE, la ('C) DRAIN VOLTAGE. VDS (V) 1 2

IDS

DRAIN CURRENT VS. GATE VOLTAGE AT AND NE24483 AT 4.0 GHz WITH VARIOUS CHANNEL TEMPERXTURES IDS = IQmA AND YDS = 3 V

GATE VOLTAGE, VGS (Vi

TYPICAL GAIN VS. FREQUEVCY FOB THE NE24406 AND NE24483 A T YII)s=U~V

AND I ~ s = 3 0 m A

TYPICAL PjOISB FIGU-XE A M ASSOCIATED GAIN YS. FREQUENCY AT V D S = ~ V

AND I~s=2 OmA

1 2 3 5 7 10 20

FREOUEMCY, f IGHz)

1 2 3 5 7 10 20

FREOUENCY. f IGHr)

ME244, LOW NOISE X-BAND GaAs FET

TYPICAL NOISE TEMPERATURE VS. AMBIENT TEMPERATURE FOR THE

NE24406 AND NE24483 AT VARIOUS FREQUENCIES

400

AMBIENT TEMPERATURE. T,i0#)

TYPICAL GAIN VS. DRAIN CURRENT RATIO FOR THE NE24406 AND

NE24483 AT 8.0 GHz

0 1 2 3 5 7 1 0 20 30 5070100

DRAIN CURRENT RATIO. 1 ~ ~ 1 1 ~ s (%)

TYPICAL i\TOISE FIGURE AND ASSOCIATED GAIN VS.. DRAIN CURRENT RATIO FOR THE NE24406 AND NE24483 AT 4.0 GHz

RELATIONSHIP BETWEEN THE RATE OF VARIATION OF NOISE TEMPERATURE/

RATE OF VARIATION OF AMBIENT TEMPERATUaE VS. FREQUENCY

7 2.0 2 2 5:

2 1.6

FREQUENCY. f (GHzI

TYPICAL NOISE FIGURE AND ASSOCIATED GAIN VS. DEAIN CURRENT RATIO FOR THE ME24406 AND NE24483 AT 1.9 GHz

1 2 3 5 7 1 0 20 30 5070100

t DRAIN CURRENT RATIO, 1 ~ 1 1 ~ s (%I

TYPICAL NOISE FIGURE AND ASSOCIATED GAIN VS. DRAIN CURRENT RATIO FOR THE NE24406 AND NE24483 AT 8.0 GHz

NE244, LOW NOISE X-BAND GaAs FET

TYPI%AL NOISE FIGURE AND ASSOCIATED GAIN VS. DRAIN CURRENT RATIO rTOR

THE NE24406 AND NE24483 AT 10.6 GHz

0 0 1 ' 2 3 5 7 10 20 30 50 70 100

DRAIN CURRENT RATIO, !DII~ss 1%)

TT(PCAL OUTPUT POWER AT THE I dl3 COMPRESSION POINT FOR THE

NE24406 AND NE24483 AT 4 GHz

TYPICAL OUTPUT POWER AT THE I dB COMPRESSION POINT VS. DRAIN

CURRENT FOR THE NE24406

- c AND NE24483 AT V D S = ~ V

DRAIN CURRENT. ID lmA)

TYPICAL SOURCE IMPEDANCE DATA FOR OPTIMUN NOISE FIGURES FOR THE

NE24406 AND NE24483

l ~ ~ = l O r n A -10 0.25 10 IMPEDANCE

NE24483, LOW NOISE X-BAND GaAs FET

Coordinates itz Ohms Frequency in GNz

(Vm=3V, dm=30rnA, ZOUT=50R)

S-MAGM AND ANGLES

,)ff)s'3V, I D S = ' ~ OtnA

FREQUENCY (MI-4z) sl 1 S21 S12 s22 i

e(gtl '22 - '2( 'st)& ~ l r ~ u o t l p * w tar ou~put, i For i n p u t

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