Developments of SOI pixel detectors€¦ · Technology Project in 2005. - aimed at establishing of...
Transcript of Developments of SOI pixel detectors€¦ · Technology Project in 2005. - aimed at establishing of...
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Developments of SOI pixel detectors
Seventh International Meeting on Front-End Electronics2009/5/18-5/21Toshinobu Miyoshi (KEK)
Tokyo
HIGH ENERGY ACCELERATOR
RESEARCH ORGANIZATION
(KEK)Super-Kamiokande
J-PARC(Japan Proton Accelerator Research Complex)
JAEA
4.23 Neutrino beamlineOperation starts
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Developments of SOI pixel detector at KEK
- Started as a generic R&D program of KEK Detector Technology Project in 2005.
- aimed at establishing of a SOI Pixel process and developing pixel detectors for many applications.
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Handle Wafer
Box (Buried Oxide)
(200 nm)
SOI (40 nm)
650um
Silicon-On-Insulator (SOI) pixel detector fabrication
Start from commercial SOI wafer(e.g.) SOITEC, ShinEtsuInsulator (buried oxide) between two silicon
High-resistivity silicon = Handle waferUse as sensor
Low-resistivity silicon = SOI layerUse as CMOS transistor formation
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Handle Wafer
p+ n+Handle Wafer
Box (Buried Oxide)
(200 nm)
SOI (40 nm)
650um
Implant p+ to produce pn junction(handle wafer = n- bulk)
Form MOS transistor on SOI layer
Silicon-On-Insulator (SOI) pixel detector fabrication
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Handle Wafer
p+ n+Handle Wafer
Box (Buried Oxide)
(200 nm)
SOI (40 nm)
650um
Al
p+n+Handle Wafer
50~650um
Circuit formation
Electrode for back bias
Thinning of
handle wafer
Silicon-On-Insulator (SOI) pixel detector fabrication
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-Truly monolithic detector ( High Density, Low material, Thin Device).
-Standard CMOS can be used ( Complex functions in a pixel).
-No mechanical bonding ( High yield, Low cost).
-Fully depleted sensor with small capacitance of the sense node( ~10fF, High conversion gain, Low noise)
-Based on Industrial standard technology ( Cost benefit and Scalability)
-No Latch Up, Rad Hard.
-Low Power
-Low to High Temp(4K-300C) operation
Features of SOI Pixel Detector
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History
'05. 7: Start Collaboration with OKI Elec. Co. Ltd. '05.10: TEG submission to OKI SOI 0.15 um process.'06.12: 1st 0.15 um MPW run hosted by KEK.MPW=Multi Project Wafer(17 designs; KEK, Japanese Universities, LBNL, FNAL, Univ. of Hawaii)
'07.6: Process (and Fab.) has changed from 0.15 um to 0.2 um.'08.1: 1st 0.2 um (FY07) MPW run was submitted. ‘08.6- : SOI chips (FY07) are testing (continue)
'09.2: 2nd 0.2 um (FY08) MPW run was submitted.'09.7: 3rd 0.2um (FY09A) MPW run is planned.
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OKI 0.2 m FD-SOI Pixel Process
Process 0.2 m Low-Leakage Fully-Depleted SOI CMOS 1 Poly, 4 Metal layers, MIM Capacitor, DMOSCore (I/O) Voltage = 1.8 (3.3) V
SOI wafer Diameter: 200 mmTop Si : Cz, ~18 -cm, p-type, ~40 nm thick Buried Oxide: 200 nm thickHandle wafer: Cz, ~700 -cm, n-type, 650 m thick
Backside Thinned to 260 mSputtered with Al (200 nm).
8
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KEK SOI MPW run (submitted in Jan. 2008)
15 designsKEK(8)JAXA(4)(=Japan Aerospace Exploration Agency)FNALLBNLHawaii
KEK TEGs (5)-Sensor characteristics
KEK pixel detectors:INTPIX2CNTPIX2SBPIX-circuit test-light & X-ray response
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Integration Type Pixel (INTPIX2)
Use 5x5mm2 area20 x 20 um pixel size128 x 128 pixels
Pixel circuit
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INTPIX2 pixel layout (20 by 20 um pixel size)
4 p+
Windowfor lazer test
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INTPIX2 block diagram & top layout
Top layout
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INTPIX2 DAQ system
ethernet
ROOT GUI software
Mobile PC
SEABAS=Soipix EvAluation BoArd with SiTCP
-packaged chip is mounted on sub-board-Use on-board 12-bit ADC-User FPGA controls INTPIX2-SiTCP(network processor) for TCP-IP-light weight detector system (portable)
INTPIX2 sub-board
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INTPIX2 Images
2.56 mm
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Lazer imagewith plastic mask
10mm
2008 INTPIX2
X-ray imagewith metal mask
Laser and X-ray response are confirmed
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Counting Type Pixel (CNTPIX2)
ChargeAmp
DualDiscri
Counter
Energy window and counting in each pixel.
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p-n junctions
Analog
16bCounter
9b Register DDL128 x 128 pixels128 x 128 pixels
CNTPIX2 pixel layout and photograph
10.4mm60um
One pixel : ~600 transistors
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1717
Laser image with metal mask
Integration time 1.6msVback =20V, Vth=200mV
Counter works
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X-ray sensitivity
Total counts increase with intensity
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Relative intensity (uA)
Tota
l cou
nts i
n th
e fig
ure
X-ray tube Cu Kalpha 8keVPhotodiode was used for intensity measurement
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SuperBelle ( Belle II) pixel : SBPIX1Aimed at application of pixel detector to Belle upgrade
Pixel size 60 um x 60 um# of pixels 48 x 48Effective area 2.88 mm x 2.88 mm
Preamp
discriTrigger latency(~9 us)
0 or 1
Pixel Block diagram
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SBPIX1 laser image with metal mask
Chip worksContinue R&D
Pixel size 60um 50um or less
50 event integration
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HV ring
Diode Ring
Guard Ring
Miyake (Tsukuba Univ.)Kouriki (KEK)Ikegami (KEK)
Distance between Diode ring and guard ring 10um
350um
Width 7um
Invastigate relationship between guard ring shape and breakdown voltage
RingTEG
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Ring TEG IV
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
0 50 100 150 200 250
Vback [V]
Leakage Current [A]
D3
D2
Break Down Voltage & Leak Current
Vbreak down ~ 230VIleak ~ 8nA@230V
Break Down Voltage can be ~230V with proper guard ring design.
TEG(0.4x0.4 mm2)
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R&D issue and 3rd MPW run submitted on Feb. 09(FY08)
LBNLLBNL
EuropeFor XFEL(Spring-8, Japan)construction2006-2010
Tokyo
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Back bias voltage(recommended) 5V(maximum operation voltage ~60V)Why?IR(980nm) response
An example of R&D issue
INTPIX2
Back gate effect?Red colorExpected curve(depletion increase)
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R&D issues
•Wafer Improvement : Double SOI Layer wafer, Higher Resistivity Wafer
•Process Improvement : Buried P-Well (BPW) process
•Integration Improvement : 3D vertical integration
Sensor and Electronics are placed very near position (~200nm) in SOI pixel. This may cause following problems.
•Back Gate Effect : Electric field from sensor will change the transistor characteristics.
•Electric field in oxide may increase hole trap probability at Si-SiO2 interface, and therefore may reduce radiation tolerance.•There may be crosstalk between circuit and sensor node. (still under investigation)
Solutions
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Buried P-Well (BPW) Technology
n-
p
p+
p
Implant through SOI layer(Buried P-Well)
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Process simulation by OKIDevice simulation by KEK
TiSSiEN
3D TCAD Simulator developed by SELETE Consortium Japan.
Currently TCAD international sells the software
TCAD simulation
http://www.tcad-international.com/english/index.html
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A simulation result by OKI
Concentration Profile of Implanted Dopant
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5 m
※ X-Y ratio is not correct.
nmos
boxW
p+(1e20)
n- bulk (6e12)
source drain
200nm
m260 m
Dope concentration [/cm3]
p+(1e20)
p1 p2
BPW simulation geometry
Zoom-in
Tsoi=40nm
m]Lg = 0.3Wg = 5
1.1 m
1 m
Device simulation by KEK
BPW
One pixel
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-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0 100 200 300 400 500 600
nmos
tr th
(V)
Back bias (V)
Back gate effect with p dose
1.00E+179.00E+168.00E+167.00E+166.00E+165.00E+164.00E+163.00E+162.00E+161.00E+161.00E+12
Nmos tr. threshold doesn’t decrease so much up to ~100VOKI process simulation results are consistent with these results
Device simulation result
wo/ BPW
BPWconcentration
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BPW
INTPIX3 structure (submitted in Feb. 2009)
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INTPIX2standard
4p(BPW)
4p(BPW) 4p(BPW)
1p1flo 1p(BPW)1flo
1p(BPW)2flo
1p(BPW)
INTPIX3 top layoutPixel variationRed:BPWBlue:p+ Separate 8 blocks
GND/floating is selectable at IO BPW, “flo” regions
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1Stack Process Flow
(after finishing wafer process)
3D Vertical IntegrationKEK/LBNL(Design) OKI FY08 (process) ZyCube (3D integration)
apply ZyCube -bump bonding (~5 um pitch) technique
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2
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3
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4
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Lower Chip Upper Chip
Two chip design by KEK/LBNL @ MPW FY08
4 alignment marksmulti guard ring structure
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CNTPIX3
• 4 kinds of Pixel Block 72x216(15,552) pixels.
• 5.0 x 15.4 mm2 chip size• 64 x 64 um2 pixel size• IO pads are located in one side
for stitching.
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stitching
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CNTPIX3 Pixel Circuit
Data & Control words are shifted downwards.
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Summary
• SOI Pixel technology has many good features such as high speed, low material, high resolution ...
• We have confirmed good sensitivity of the SOI pixel detectors to Light and X-rays.
• We have already done 3 MPW runs from 2006, Each includes ~17 designs from many institutes.
• To improve the performance we are developing new techniques of 'Buried P-Well', and ‘3D Vertical Integration' .
• SOI Pixel technology has many good features such as high speed, low material, high resolution ...
• We have confirmed good sensitivity of the SOI pixel detectors to Light and X-rays.
• We have already done 3 MPW runs from 2006, Each includes ~17 designs from many institutes.
• To improve the performance we are developing new techniques of 'Buried P-Well', and ‘3D Vertical Integration' .
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Schedule'05. 7: Start Collaboration with OKI Elec. Co. Ltd.
'05.10: TEG submission to OKI SOI 0.15 um process.
'06.12: 1st 0.15 um MPW run hosted by KEK.
'07.6: Process (and Fab.) is changed from 0.15 um to 0.2 um.
'08.1: 1st 0.2 um (FY07) MPW run was submitted.
'09.2: 2nd 0.2 um (FY08) MPW run was submitted.
‘09 5 (end) : FY08 process will ends ’09 6 chip test‘09 5 (end) : some wafers transfer to ZyCube FY08 3D integration'09.7 (end) : 3rd 0.2um (FY09A) MPW run deadline‘09.10- : SR X-ray test @ KEK-PF‘10.1? : 4th 0.2um (FY09B) MPW run is planned.
We welcome anyone who has interests in the SOI pixel technology to join the SOI MPW runs.
http://rd.kek.jp/project/soi/
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SOI Pixel CollaborationKEK : Y. Arai, Y. Unno, S. Terada, Y. Ikegami, T. Tsuboyama, T. Kohriki, Y. Ikemoto, T. Miyoshi, K. Tauchi, R. IchimiyaTsukuba Univ. : K. Hara, H. Miyake, T. Sega, M. KochiyamaOsaka Univ.: K. Hanagaki, M. HiroseTohoku Univ. : Y. Onuki, H. Yamamoto, Y. HoriiKyoto Univ. : T. Tsuru, H. Matsumoto Kyoto Univ. of Education: R. Takashima, A. TakedaJAXA/ISAS : H. IkedaRIKEN : T. Hatsui, T. Kudo, T. Hirono, M. Yabashi, Y. Furukawa, A. TaketaniHawaii: G. Varner, M. Cooney, H. Hoedlmoser, J. Kennedy, HB SahooLBNL : M. Battaglia, P. Denes, C. Vu, D. Contarato, P. Giubilato, L. GlesenerFNAL : R. Yarema, R. Lipton, G. Deptuch, M. TrimplKrakow: P. Kapusta, H. PalkaINFN Padova: D. Bisello, S. Mattiazzo, D. PantanoOKI Semiconductor Co. Ltd. : M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, M. Okihara, H. Hayashi, Y. Kawai , A. Ohtomo
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Supplements
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5 m
nmos
box
W
p+(1e20)
n- bulk (6e12)
backbias 100V
source drain
200nm
m350 m
DopingConcentration[/cm3]
p+(1e20)
p1 p2
Zoom-in
W
On-going Simulation -crosstalk-
!!!!!!
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Crosstalk between MOS and sensor node
1V(1ns) pulse (blue)
(ns)
1V
Indu
ced
curre
nt (A
)
-100nA
100nA
Currents induced differentiallyDepends on distance between nmos and sensor node ((should be longer)More real configuration has to be simulatedHow to confirm?
1ns