Development of coherent EUV source for EUV mask metrologyeuvlsymposium.lbl.gov/pdf/2011/pres/Dong...

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Development of coherent EUV source for EUV mask metrology Dong Gun Lee 1 *, Jong Gul Doh 1 , Hwan-Seok Seo 1 , Buyeob Yoo 2 , Jonglip Choi 2 , Jinho Ahn 3 , Seong-Sue Kim 1 , and Han-Ku Cho 1 1 Semiconductor R&D Center, Samsung Electronics Co., Ltd. 2 Fine Semitech Co., Ltd. 3 Department of materials Science and Engineering, Hanyang University *[email protected]

Transcript of Development of coherent EUV source for EUV mask metrologyeuvlsymposium.lbl.gov/pdf/2011/pres/Dong...

Page 1: Development of coherent EUV source for EUV mask metrologyeuvlsymposium.lbl.gov/pdf/2011/pres/Dong Gun Lee.pdf · Development of coherent EUV source for EUV mask metrology Dong Gun

Development of coherent EUV source for EUV mask metrology

Dong Gun Lee1*, Jong Gul Doh1, Hwan-Seok Seo1, Buyeob Yoo2, Jonglip

Choi2, Jinho Ahn3, Seong-Sue Kim1, and Han-Ku Cho1

1Semiconductor R&D Center, Samsung Electronics Co., Ltd.

2Fine Semitech Co., Ltd.

3Department of materials Science and Engineering, Hanyang

University

*[email protected]

Page 2: Development of coherent EUV source for EUV mask metrologyeuvlsymposium.lbl.gov/pdf/2011/pres/Dong Gun Lee.pdf · Development of coherent EUV source for EUV mask metrology Dong Gun

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Introduction

- Coherent EUV source based on high-order harmonic generation for mask metrology tool

- Commercial coherent EUV source from FST: EUVO40

Analysis results of commercial coherent EUV source

CSM(Coherent Scattering Microscopy) application results

Summary

Contents

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EUV Metrology Source

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LPP & DPP source High-Order Harmonics &

x-ray laser

Coherent EUV source

(=laser-like source)

Incoherent EUV source

(=lamp-like source)

•Blank& Pattern Mask Inspection

•EUV AIMS

•Reflectance measurement

•Interferometer

•Interference Lithography

•Phase measurement

•Coherent Scattering Microscopy

(CSM)

Application

method

CSM* as an EUV scatterometry could offer the advantages of high throughput and superior repeatability in actinic CD-metrology applications

Type

*EUVL symposium 2008, Donggun Lee., et al

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High-Order Harmonic Generation

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The high-order harmonics are emitted in a coherent laser-like beam

Fully spatially coherent 13.5-nm harmonic beam(59th of 800-nm pump laser beam) is best EUV source for CSM applications

(1) Laser field induced ionization

(2) Acceleration in the laser field

(3) Recombination to it’s mother atom

High harmonics

Intense fs laser

Gas Cell

atom

electron

Laser

X-ray

Page 5: Development of coherent EUV source for EUV mask metrologyeuvlsymposium.lbl.gov/pdf/2011/pres/Dong Gun Lee.pdf · Development of coherent EUV source for EUV mask metrology Dong Gun

Commercial Coherent EUV Source From FST

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FST(Fine Semitech Co., Ltd.) developed the coherent EUV source by using high-order harmonic generation

Samsung and FST characterized the properties of the source together

FST EUV040 EUV Source

control

Pump laser

control

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EUV Power and Divergence Results

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Far-field EUV beam profile

X-ray CCD/

photodiode X-ray filter

EUV Mirror

EUV power from x-ray photodiode (IRD)

• >45nW @1-kHz

Gas cell

EUV source

• <0.25 mrad

Brightness: >182 W/mm^2/sr Lowest divergence using

self-guiding techniques

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Shot-to-Shot Energy & Position Stability Results

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Pulse Energy Monitoring Source Position Monitoring

Shot-to-shot energy stability: s = 2.3% (pulse width < 50 fs)

Shot-to-shot source position stability: sx,y < 1.2 mm, Range < 4.3 mm

Page 8: Development of coherent EUV source for EUV mask metrologyeuvlsymposium.lbl.gov/pdf/2011/pres/Dong Gun Lee.pdf · Development of coherent EUV source for EUV mask metrology Dong Gun

EUV Spectral Bandwidth Results

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124 126 128 130 132 134 136 138 140 142 144

0

20

40

60

80

100

Data: InterExtrap1_Book2C25

Model: Gauss

Chi^2 = 1.47946

R^2 = 0.99037

y0 3.88966 ±0.02803

xc 134.9984 ±0.00061

w 0.3972 ±0.00123

A 44.75471 ±0.12222

Sp

ectr

um

(arb

. u

nit

s)

Wavelength (Å)

EUV Spectrometer

EUV Mirror

l/Dl=25

Gaussian-like spectrum

l/Dl = 294

l

Narrow bandwidth using

coherent control techniques

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Needs an Actinic CD Measurement Tool

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CD-SEM: Top CD

Substrate

ML mirror

Conductive layer

Capping layer

ARC (LR)

Absorber layer

The only actinic CD tool (AIMS or CSM) can measure the integration of 3D mask and ML effects

CSM (coherent scattering microscopy) is the best actinic CD-metrology solution for mask CD uniformity control with advantages of high throughput and superior repeatability

ML Reflectance Uniformity after mask process

Ex) 3s = 1.6%

0.8 nm @wafer

3-D Mask Effects Multilayer Effects

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Stand-Alone CSM Using Coherent EUV Source

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The CSM using the coherent EUV source has built at Hanyang university

The system measures field spectrum up to NA0.5 (4X wafer scale)

Aerial image is reconstructed using field spectrum and iteration algorithm

Optics & Stage Chamber Coherent EUV Source

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Illumination & Coherence Conditions For CSM

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X-ray CCD

Beam

illumination

pixel

object

Image reconstruction conditions:

1. Oversampling ratio(=FOV/beam size >> 2

- pixel size of 13.5 um FOV =220um

- beam size at sample: <2 um

- ratio = 110 (OK)

2. Fully spatially coherent beam (OK)

- intrinsic property of high-order harmonic

3. Temporal coherence length > 0.25 um

- Lcoh = l2/Dl = 4 um (OK)

4. SNR determined by shot noise, electrical noise, and flare (?)

FOV

FFT-1 FFT

NA

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Application #1: CSM as a Scatterometry

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CSM Result SEM Result

Mask model Field Spectrum vs. CD

library generation

Litho.

simulation

Fitting library to CSM data

CSM result shows very good correlation with SEM measurements

EUV Mask CD Uniformity Map < 30 msec / image

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Application #2: CSM as an Aerial Image Measurement Tool

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Measured field spectrum

0.45 NA (4x wafer scale)

Reconstructed

Aerial Image

1. Phase retrieval using

HIO algorithm

2. Applying illumination

Kernel(NA&s)

Reconstructed CD

uniformity map for 88 nm

L/S pattern under

NA=0.25&s=0.8 exposure

condition

after 3 hr exposure at

Pohang acceleration system

CD SEM Results

ΔCD=7.9 nm ΔCD=56 nm

< 5 sec / image

Page 14: Development of coherent EUV source for EUV mask metrologyeuvlsymposium.lbl.gov/pdf/2011/pres/Dong Gun Lee.pdf · Development of coherent EUV source for EUV mask metrology Dong Gun

Summary

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We introduce a coherent EUV source in the area of EUV mask metrology

Samsung characterized the coherent EUV source from FST and applied it to CSM at Hanyang university

The summarized performance of EUV source as follow:

- EUV source power: >45 nW @1-kHz repetition rate

- Beam divergence : <0.25 mrad

- Brightness: >182 W/mm^2/sr

- Spectral bandwidth: l/Dl =294

- Shot-to-shot energy stability: s = 2.3% (pulse width < 50 fs)

- Source position stability: sx,y < 1.2 mm, Range < 4.3 mm

- Debris-free process of laser-gas interaction

The application of this source to CSM makes it dispensable of collector and monochromator.

The possibilities of stand-alone CSM using the source as an EUV scatterometry and aerial image measurement tool were demonstrated