deposition systems for Compound emisConduCtors AIX G5+ C ...€¦ · AIX G5+ C Cluster AIXTRON SE,...
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DEPOSITION SYSTEMS FOR COMPOUND SEMICONDUCTORS AIX G5+ C Planetary Reactor ® for GaN on 150/200 mm Si
Transcript of deposition systems for Compound emisConduCtors AIX G5+ C ...€¦ · AIX G5+ C Cluster AIXTRON SE,...
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deposition systems for Compound semiConduCtors
AIX G5+ C Planetary Reactor® for GaN on 150/200 mm Si
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Single wafer performance with batch reactor benefits
AIX G5+ C Cluster
AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany
pHone +49 (2407) 9030-0 fax +49 (2407) 9030-40
e-maiL [email protected] WeB www.aixtron.com
Cassette-to-Cassette Wafer Handler
AIX G5+ C characteristics
Unique axis symmetric wafer performance like Si single wafer reactor
- Wafer bow
- Thickness, composition, concentration
- Device yield
Warm ceiling results in lowest heat flux through wafer
- Smallest wafer bow by vertical temperature gradient
- Enabling standard Si wafer thickness
Customized temperature optimization by recess shaping
Increase your productivity and performance
Chosen by the best in the industry
Highest throughput
Lowest Cost of Ownership
Highest yield performance
1st fully automated MOCVD platform with Cl
2 in-situ cleaning and cassette-to-cassette
wafer handler
2.9002.9673.0331.1003.1673.2333.3003.3673.4333.5003.5673.6333.7003.7673.8333.900
3.370.01
(0.36 %)
Single Wafer Performance with Batch Reactor Cost BenefitGaN on Si HEMT thickness uniformity 0.44 % standard deviation without edge exclusion. Mean thickness 3.37 µm.
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