DDRII TERMINATION REGULATOR - 3D PLUS · 2017-07-28 · RELIABLE MINIATURIZATION TECHNOLOGIES FOR...
Transcript of DDRII TERMINATION REGULATOR - 3D PLUS · 2017-07-28 · RELIABLE MINIATURIZATION TECHNOLOGIES FOR...
RELIABLE MINIATURIZATION TECHNOLOGIES FOR ELECTRONICS
3 D P M 0 2 3 7 - 2
Source and Sink current capability ±1A
Input Voltage Range (VDD) : 1.6V to 2.8V
JESD8-15A JEDEC standard compatible
VTT Output Voltage Ripple to within ±40 mV
Remote VTT Voltage Sensing
VTT Soft Start Function
Thermal Protection
No external output capacitors needed
Space Qualified Technology
Radiation Hardened designTID > 50 krad(Si)
SEL LET > 80MeV.cm2/mg
SET Immune > 80MeV.cm2/mg
Temperature Range -40°C / +105°C
Compact Size and Low Weight
24-pin SOP
ITAR Free Product - Worldwide delivery guaranty
Size: 20 x 20 x 13.2 mm
Mass: 15 g
Memory system architectures using DDRII technology need to be compliant with JEDEC JESD8-15Astandard. Therefore a bus termination regulator able to sink and source current while regulating VTT
voltage is used for this purpose. The module has been specifically designed for low input voltage, lownoise and high reliability systems.
The 3DPM0237-2 maintains a fast transient and supports a remote sensing function and all powerrequirements for DDRII VTT bus and is available in a thermally-efficient package. Also, it can be usedfor any other device DDR memory device (DDR, DDR2) for all the space applications: sciences and deepspace missions, Earth observation, navigation, launchers and manned space vehicles.
RELIABLE MINIATURIZATION TECHNOLOGIES FOR ELECTRONICS
DDRII TERMINATION REGULATOR S I N K / S O U R C E ± 1 AT I G H T R E G U L AT E D V T T O U T P U T R A D I AT I O N H A R D E N E D D E S I G N
K E Y F E AT U R E S
P R O D U C T O V E R V I E W
DDRII memory devices use a high speed data buswhich has to be terminated. Termination is made bymeans of a voltage regulator which shall sink andsource current depending on bus demand. One of themost critical aspects of DDRII TR module is itscapability to maintain the regulated VTT output withinthe regulation limits (VREF ±40mV) regardless of theoutput load. This tight regulation performance can beachieved by using an innovative Bang-Bang regulationprinciple, chosen for its speed performance and toguarantee an output voltage that remains within thepredefined limits regardless of any output currenttransients.
The output filter type is selected to make the modulerugged to any overload condition without complexprotection circuits. No external filters or decouplingcapacitors are needed. A dedicated VTT_SENSE pin isalso provided if remote VTT sensing.
R E L I A B L E M I N I A T U R I Z A T I O NT E C H N O L O G I E S F O R E L E C T R O N I C S
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P R O D U C T P E R F O R M AN C E S
PIN DESCRIPTION
VDD Supply voltage pins used to power the output stage of the DDR2 TR (VTT output)
VAUX Auxiliary supply pins used to power the internal control circuits of the DDR2 TR
GND Ground pins
VREF_IN Input reference voltage pin, shall be set to VDD/2
VREF_OUT Buffered output reference voltage pin. This output may be used to provide the memory with the reference voltage
VTT Regulated output voltage pins, capable of sinking and sourcing up to 1A while regulating to input reference voltage VREF_IN
VTT_SENSEVTT sensing pin, used for improving remote load regulation. If remote sensing is not needed, this pin shall be connected to VTT
output pins. This pin shall never be left open
ENActive high enable command, used to set VTT output in regulation mode. When connected to GND, VTT output is in high impedance (Suspend to RAM mode)
DNU Do Not Use pins. These pins shall be left open
PARAMETER SYMBOL MIN TYP MAX UNIT
INPUT & OUTPUT SPECIFICATIONS
Input Voltage VDD 1.6 1.8 2.8 V
Auxiliary Suply Voltage VAUX 3 6 V
Auxiliary Supply Current IAUX 10 55 mA
Output Voltage VTTVREF_IN
-40mV
VREF_IN VREF_IN
+40mVV
Output Current IOUT -1 1 A
Output Current Speed Change dIOUT/dt 10A/µs
COMMANDS
Input Reference Voltage VREF_IN 0.5 2 V
Buffered Reference Voltage VREF_OUTVREF_IN
-1mVVREF_IN
VREF_IN
+1mVV
Buffered Reference Output Current IREF_OUT -350 350 µA
Enable Level
VAUX = 3V 2.2 V
VAUX = 6V 2.7 V
Inhibit Level
VAUX = 3V 0.6 V
VAUX = 6V 0.7 V
PROTECTIONS
Internal Shutdown Temperature - +120 +135 °C
Junction Temperature - -40 +125 °C
TEMPERATURE RANGES
C : Commercial (0°C to 70°C)
I : Industrial (-40°C to +85°C)
S : Specific (-40°C to +105°C)
ORDERING INFORMATION
QUALITY GRADES
N : Commercial
B : Industrial
S : Space
P I N D E S C R I P T I O N
Part Number – X X – X00X
Quality Grade
Temperature Range
Options
PAC K AG E
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2017