Dominical 16/11/2014 - Llopart Leopardi Gran Reserva 2009. Català
David Attié P. Colas, E. Delagnes, Y. Giomataris, M. Campbell, X. Llopart,
description
Transcript of David Attié P. Colas, E. Delagnes, Y. Giomataris, M. Campbell, X. Llopart,
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NDIP08 – Aix-les-Bains – June 19th, 2008 1
David Attié
P. Colas, E. Delagnes, Y. Giomataris,M. Campbell, X. Llopart,
M. Chefdeville, H. van der Graaf, J. Timmermans, J. Visschers
Gas pixel detector Gas pixel detector
for x-ray for x-ray
observationobservation
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Outline
Introduction: motivations for a gas pixel detector
1.The TimePix readout chip
•Description
•Architecture and schematic
2.Micro Pattern Gaseous Detector TPC
•Description of Micromegas
•Micro-TPC
3.Application for x-ray observations
•Measurement of primary statistics in gas
•TPC based polarimeter
Conclusion
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Motivations for pixelized gaseous detector
• Gaseous detector advantages:– 2D/3D imaging
– Low occupancy and low radiation length X0
mean free path could be important
• Spatial resolution:
– σxy limited by the pad size (pitch/√12)
– narrow charge distribution (RMS ~15 μm)
• High granularity:– δ-ray recognition/suppression in TPC– possibility to count primary clusters & electrons– direction & energy of tracks:
low-energy e- for X-ray polarimetry 2 e- from double beta decay, nuclear recoils in WIMP
or neutrino interactions for dark matter search
Digital TPC as a tracking detector with very high spatial resolution for astrophysics & high energy physics experiments
ALICE TPC simulations
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Llopart et al., NIMA 581 (2007) 361
• Chip (CMOS ASIC) upgraded in the EUDET framework from the Medipix2 chip developed first for medical applications
• IBM technology 0.25 μm on 6 layers
• Characteristics:– surface: 1.4 x 1.6 cm2
– matrix of 256 x 256– pixel size: 55 x 55 μm2
• For each pixel:– preamp/shaper– threshold discriminator– register for configuration– TimePix synchronization logic– 14-bit counter
• Noise: ~ 650 e-– 70 e- per pixel, Cin ~ 15 fF
Description of the TimePix chip
55 m
55 m
14111 m
1612
0 m
1408
0 m
(pi
xel a
rray
)
Pixel
11 22 33
44
55
55
μ m
55 μ m
Pre
am
p/
shap
er
TH
L dis
c. Con
fig
ura
tion
la
tch
es
Interface
Counter
Syn
chro
niz
ati
on L
ogic
12345
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Medipix ModeTOT Mode Timepix Mode
TimePix Synchronization Logic Control
DACs values
Mask P1 P0 Mode
0 0 0 Masked
0 0 1 Masked
0 1 0 Masked
0 1 1 Masked
1 0 0 Medipix
1 0 1 TOT
1 1 0 Timepix-1hit
1 1 1 Timepix
100 MHz
Analog Signal
Internal Shutter
Shutter
Internal Clock
Digital Signal
not detected
detected
• Each pixel can be configured independently in 5 different modes
• Internal clock up to 100 MHz
Summed charge
10 ns
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Detectors using TimePix chip
+
-
+
-
+
-
Medipix2/TimePix chip TimePix chip
X-ray source
Ionizing
particle
Flip-chip bump bondingconnections
Semiconductorsensor
Gas volume
Amplification System (MPGD)
Drift cathode grid
Solid detector Gas detectorx, y, F(x, y) 2D x, y, z(t), E(x,y) 3D
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InGrid: Integrated Micromegas Grid
• Integrate Micromegas detector directly on a CMOS chip by post-processing
Resistive layer for protection of a-Si:H
~ 8
0 k
V/cm
NIKHEF(MESA+,
Univ. Twente)
IMT Neuchatel
• Micromegas is a Micro Pattern Gaseous Detector formed by a metallic micromesh (hole pitch 70 μm) sustained by 50 μm pillars above the anode
• Multiplication between anode and mesh
• Gain up to 105
~ 1
kV
/cm
PCBpad
e-
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• Energy resolution depends on thegrid geometry
• Grids can be very flat
– best energy resolution achieved: 13.6 % with 55Fe source in P10
– removal of Kβ 6.5 keV line: 11.7 % @ 5.9 keV in P10
• Hole pitch down to 14 μmwith various diameters
• Different gaps (35-75 μm)
• Until now: grid is 1 μm of Albut can also be increased to 5 μmby electrolysis to be more robust
Escape peak Kα
Escape peak Kβ
13.6 % FWHM
Kβ-filtered spectrum with Cr
foil
11.7% FWHM
Gap: 50 μm; Hole picth: 32 μm,Ø: 14 μm
InGrid: energy resolution
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Micro-TPC using TimePix/Micromegas
Field cage
Cover
Micromegasmesh
TimePix chip
Windows for X-ray sources
Windows for β sources
• Gas mixture at atmospheric pressure
6 c
m
• Micro-TPC with a 6 cm height field cage
• Size : 4 cm × 5 cm × 8 cm
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Micro-TPC TimePix/Micromegas
• TimePix chip+ SiProt 20 μm+ Micromegas
• 55Fe source
• Ar/Iso (95:5)
• Time mode
• z = 25 mm
• Vmesh = -340 V
• tshutter = 283 μs
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Measurements of primary statistics in gases
• Diffusion σt should be big enough to separate electrons: e- per pixel ~ 1
• Study of primary electrons and Fano factor F using RMS
• Spectrum of number of electrons for 2000 events:
Sensitive to Kα & Kβ lines
FWHM = 9,5 %
5.9 keV line at ~ 226 e-
TimePix+Ingrid+ 15 μm SiProt Argon + 5% Isobutane
F: Fano factor√b: single e- gain distribution rms (%)ε: detection efficiencyN: number of primary e-
Nεε
NbF
RMS
12
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Polarimetry using photoelectric absorption
• Differential photoelectron cross-section emittedfrom the atomic s-orbital in non relativist limit:
• θ polar angle, φ azimutal angle
• Emission angles are modulated by the polarization P
φΩdσd
θβ
φθυhcm
αZrΩdσd e
2
4
2227
2452
0
cos
cos1
cossin24
BAB
NNN
P
2
minmax
Auger electron
X-ray
Photoelectron
E
φ
θ
)(cos)( 2polφφBAφN
maximum in the plane γ direction
• Ideal polarimeter is a track imager with:resolution elements < mean free path of photoelectron
Nmax
Nmin
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Prototype TPC polarimeter using TimePix/Micromegas
• TimePix chip+ SiProt 20 μm+ Micromegas
• 55Fe source
• Ne/Iso (90:10)
• TOT mode
• z < 5 mm
• Vmesh = -450 V
• tshutter = 0.2 s
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• TimePix chip+ SiProt 20 μm+ Micromegas
• 55Fe source
• Ne/Iso (90:10)
• TOT mode
• z < 5 mm
• Vmesh = -450 V
• tshutter = 0.2 s
Prototype TPC polarimeter using TimePix/Micromegas
• Determination of the polarization
Barycentre
Principal axis
φ
• Identify the cluster
• Low Ek-edge of Neon eauger areisotropically emitted with a smallfraction of the photon energy
• In low Z gas mixture tracks arelonger so angular reconstruction is easier
φ photoemission angle
Reconstructed absorption point
Reconstructed photoemission direction with identificationof the absorption point and theremoval of the final part of the track
Photoelection + eauger track in Neon+10 Isobutane
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Example of TPC for x-ray polarimeter
Black et al. NIMA 581, 2007, 755
Unpolarized
5.9 keV photons
Polarized 6.4 keV photons
90o45o0o
GEM like Readout Strips130 μm pitch
X-ray
Drift Electrode
Digitized Waveforms
Differentiated Waveforms
Image
Gas mixture: Neon/DME 50:50 at 0,6 atm
Triggerx
y
z
x(t)
y
Photoelectron
e- Drift
• Uniform response
• Modulation (P ~50 %)
• No false modulation
• An encouraging start Photoemission electron angle (degree)
Counts
2O mm
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Conclusions
• TimePix chip/Micromegas + SiProt: demonstrator for the digital TPC useful tool for x-ray observations
• Ultimate resolution for a TPC thanks to the single electron sensibilityMicro-TPC is an excellent tool to characterize photon absorption in gas mixtures
- statistics of primary electrons and clusters- Fano factor (gain fluctuation)
• Identification of the photoelectron angle by imaging the photoelectron trackis very promising for soft x-ray polarimetry ( 2 keV < Eγ < 50 keV)
• Still some technologic issues: Self triggering capability How to improve the readout of the chips (speed and larger surface) ?
- through Si connectivity: avoiding bonding wires - fast readout technology (~5 Gb/s)
Sealed detector
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NDIP08 – Aix-les-Bains – June 19th, 2008 17
The TimePix collaboration
Thank you for your attention
• NIKHEF Harry van der GraafMartin FransenJan TimmermansJan VisschersSipho van der PuttenArno Aarts
• Saclay CEA/DAPNIA David AttiéPaul ColasEsther Ferrer-RibasArnaud GiganonYannis GiomatarisMarc Riallot
• Univ. Twente/Mesa+ Jurriaan SchmitzVictor Blanco CarballoCora SalmSander Smits
• FREIBURG A. BambergerK. DeschU. RenzM. TitovN. VlasovA. ZwergerP. Wienemann
• CERN Erik HeijneXavier LlopartMedipix Consortium
β- from 90Sr source in He/Isobutane 80:20
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Readout system for Medipix2/TimePix chip
• MUROSv2.1:– Serial readout– VHDCI cable of length <3m– read 8 chips in mosaic– tunable clock [30-200MHz]– ~40fps @160MHz
http://www.nikhef.nl/pub/experiments/medipix/muros.html
• USB:– Serial readout– ~5 fps@20MHz
http://www.utef.cvut.cz/medipix/usb/usb.html
• Mosaic achitecture:
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NDIP08 – Aix-les-Bains – June 19th, 2008 20
TimePix chip architecture
IO
Logic
LVDS
In
LVDS
Out32-bit CMOS Output
256-bit Fast Shift Register
3584
-bit
Pix
el C
olum
n-0
3584
-bit
Pix
el C
olum
n-0
Bandgap + 13 DACs16
120
m
14111 m35
84-b
it P
ixel
Col
umn
-135
84-b
it P
ixel
Col
umn
-1
3584
-bit
Pix
el C
olum
n-2
5535
84-b
it P
ixel
Col
umn
-255
1408
0 m
(pix
el a
rray
)
• 36×106 transistors on 6 layers(~550 transistors/pixel 13.5 μW)
• Reference clock per pixel up to 100 MHz
• Characteristics:– analog power: 440 mW– digital power (Ref_Clk = 80 MHz): 450 mW– serial readout (@ 100 MHz): 9.17 ms– parallel readout (@ 100 MHz): 287 μs
• Pixel modes:– masked– counting mode (Medipix, Timepix-1h)– Time-Over-Threshold “charge” info– Common stop “time” info
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NDIP08 – Aix-les-Bains – June 19th, 2008 21
TimePix chip schematic
Preamp
Disc
THR14 bitsShift
Register
Input
Ctest
Testbit
Test Input
Mask
4 bits thr Adj
Mux
Mux
Clk_Read
Previous Pixel
Next Pixel
Conf
8 bits configuration
Polarity
Analogic part Digital part
Ref_Clk
Timepix Synchronization
Logic
Ref_Clkb
P0
P1
Shutter
Ovf Control
Clk_Read
Shutter_int
For each pixel
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1 516
516
1X (column number)
Y
1 45.75 90.5 135.3 180
1
First TimePix Quad
Llopart & Campbell, CERN
• First Timepix quad
+ 300 μm Si crystal
1. Medipix mode counting
- 55Fe source
- tshutter =40 s
2. Time mode
- 90Sr source
- tshutter = 237 μs
3. Time-Over-Threshold mode
- 241Am source
- tshutter = 5 s
1 516
516
1X (column number)
Y
0 2953 5905 8858 1.181e+004
2
1 516
516
1X (column number)
Y
1 250.8 500.5 750.3 1000
3
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NDIP08 – Aix-les-Bains – June 19th, 2008 23
Ar
CO
2 7
0/3
0H
e C
O2 7
0/3
0TimePix & GEMs
Freiburg (+Bonn)
• Cartes de 181x181 en mode Time & et en TOT
• Fournit les informations charge & temps en même temps
• Fort potentiel pour la séparation de traces
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• Timepix chip + Micromegas on frame:
• Timepix chip + SiProt + Ingrid:
Moiré effects+ pillars
“Uniform”
MESA+
IMT Neuchatel “counting” mode
TimePix using Micromegas
Resistive layer for protection
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Micro-TPC TimePix/Micromegas
• TimePix chip+ SiProt 20 μm+ Micromegas
• 90Sr source
• Ar He
• Time mode
• z ~ 40 mm
• Vmesh = -340 V
• tshutter = 180 μs
spark-proof !
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Micro-TPC TimePix/Micromegas
• TimePix chip+ SiProt 20 μm+ Micromegas
• 90Sr source
• Ar/Iso (95:5)
• Time mode
• z ~ 40 mm
• Vmesh = -340 V
• tshutter = 180 μs
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NDIP08 – Aix-les-Bains – June 19th, 2008 27
Gas mixture containing Neon
http://www-cxro.lbl.gov
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Simulated quality factor
Bellazzini et al., NIMA 572 (2007) 167