datashet automotriz

152
SANKEN ELECTRIC CO.,LTD.

Transcript of datashet automotriz

Page 1: datashet automotriz

SANKEN ELECTRIC CO.,LTD.

Page 2: datashet automotriz

The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies.Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current.Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use.When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility.Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction.Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested.The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.Anti radioactive ray design is not considered for the products listed herein.This publication shall not be reproduced in whole or in part without prior written approval from Sanken.Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or smashed in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed.

CAUTION / WARNING

••

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Contents

1

Examples of Use of Typical Products by Application .............. 2

1 ICs1-1. Regulator ICs

Application Note ................................................................................ 7

Dropper Type Regulator ICs ......................................................... 8

Dropper Type System Regulator ICs ...................................... 16

Switching Type Regulator ICs ................................................... 22

1-2. Power Switch ICs

High-side Power Switch ICs ...................................................... 24

Low-side Switch ICs ...................................................... 50

1-3. Motor Driver ICs

Stepper-motor Driver ICs ............................................................ 56

DC Motor Driver ICs ...................................................................... 60

1-4. HID Lamp Driver ICs ..................................................................... 64

1-5. Custom ICs ....................................................................................... 76

2 Discretes2-1. Transistors

2-1-1. Transistors ............................................................................ 80

2-1-2. Transistor Arrays ............................................................... 96

2-2. MOS FETs

2-2-1. MOS FETs ......................................................................... 108

2-2-2. MOS FET Arrays ............................................................. 117

2-3. Thyristors

2-3-1. Reverse Conducting Thyristors .............................. 125

2-4. Diodes

2-4-1. Alternator Diodes ........................................................... 127

2-4-2. High-voltage Diodes for Igniter ................................ 128

2-4-3. Power Zener Diodes ..................................................... 129

2-4-4. General-purpose Diodes ............................................ 130

3 LEDs3-1. Uni-Color LED Lamps ................................................................ 134

3-2. Bi-Color LED Lamps .................................................................. 137

3-3. Surface Mount LEDs .................................................................. 138

3-4. Infrared LEDs .................................................................................. 140

3-5. Ultraviolet LEDs ............................................................................ 141

3-6. Multi-chip Modules .................................................................... 142

Part Number Index in Alphanumeric Order ......................................... 147

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Examples of Use of Typical Products by ApplicationExamples of Use of Typical Products by Application

Throttle System

•DC Motor Driver ICs (p.60 and after)Control IC and full bridge power stage in a single package. Surface-mounting type series are also available.SI-5300 / SPF7301

•Motor Driver Transistor Arrays (p.99)H-bridge of NPN x 2 and PNP x 2 in a single package. With integrated back emf. clamp diode.SLA8004

•Motor driver power transistors (p.68 and after)With integrated back emf. clamp diode. 2SA1568 / 2SC4065

•Diodes (p.127)Solder and press fit type as well as Zener type is available.SG-9 / SG-10 / SG-14

•Regulator ICsCustom-made (contact our sales reps.)

Alternators

•Injector transistors (p.84 and after)Transistors and MOS FETs are available in discretes and arrays in various packages.2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C / STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103

Fuel Injectors

•HID lamp driver ICs (p.64 and after)High-voltage controller IC and 4-circuit power stage in a single package.Direct drive from CPU.SLA2402M / SLA2403M / SMA2409M

•Thyristors for HID lamp ignition (p.125 and after)Best suited to C-discharge SW element on high-voltage primary side of an igniter.Integrates a reverse direction diode.High di/dt resistanceTFC561D / TFC562D

•MOS FET arrays for driving HID lamps (p.122)4 circuits of N-ch MOS FETs of 450V/7A in a single package.SMA5113

•2-ph stepper-motor driver ICs for AFS (p.58 and after)Low output saturation voltage, integrated recovery diode, surface-mount.SPF7211

•High-voltage diodes for ignition (p.128)Withstand voltage range: 0.5 to 15kVSHV-01JN / SHV-05J / SHV-06JN

•Ignition transistors (p.89 and after)2SD2141 / MN638S

•Ignition ICsCustom-made (contact our sales reps.)

Headlamps

Ignition System

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•AT solenoid drivers (high-side power switch ICs) (p.26 and after)Integral diagnostic function, surface-mount, 2- and 3-circuit types and other diverse models.

SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M

•AT linear solenoid driver (high-side power switch ICs) (p.46 and after)Integral current detection resistor, current monitor output, surface-mount and 2-circuit types are also available.

SPF5017 / SPF5018

•Solenoid/motor driver MOS FETs (p.108 and after)Various packages from discretes to arrays.

2SK3710 / FKV660S / SLA5027 / SDK08

•Solenoid/motor driver ICs (p.54)Surface-mount 4-circuit type with output voltage monitor.SPF5012

•Multi-chip LED modules (p.142)

Room Lamp

Power Steering

•Motor driver MOS FETs (p.108 and after)Various packages integrating low ON resistors, bidirectional Zener diodes, etc.

2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 / 2SK3801 / 2SK3803 / 2SK3851

•Power LEDCustom-made (contact our sales reps.)

Tail Lamps

O2 sensor heater

•Heater driver MOS FETs (p.115)Low ON resistor and integral gate protection diode.

FKV460S

Car Navigation and Audio•Various LEDs (p.133)

Transmission ABS and VDC

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1 ICs

1-1. Regulator ICs Application Note .............................................. 7

Dropper Type Regulator ICs .................... 8

SI-3001S (5V/1A, With Output ON/OFF Control) ... 8

SI-3003S (5V/0.8A, 3-terminal) ....................... 10

SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12

SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14

Dropper Type System Regulator ICs .. 16

SI-3322S (5V, Surface-mount) ........................ 16

SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18

SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20

Switching Type Regulator ICs ............... 22

SI-3201S (5V/3A) ............................................ 22

1-2. Power Switch ICs High-side Power Switch ICs ................... 24

SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24

SI-5151S (With Diagnostic Function).............. 26

SI-5152S (With Diagnostic Function).............. 28

SI-5153S (With Diagnostic Function, Built-in Zener Diode)30

SI-5154S (With Diagnostic Function, Built-in Zener Diode)32

SI-5155S (With Diagnostic Function).............. 34

SLA2501M (With Diagnostic Function, 3-circuits) 36

SLA2502M (With Diagnostic Function, 4-circuits) 38

SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40

SPF5004 (With Diagnostic Function, Surface-mount 2-circuits) 42

SPF5007 (With Diagnostic Function, Surface-mount 3-circuits) 44

SPF5017 (Surface-mount 2-circuit, current monitor output function) 46

SPF5018 (Surface-mount, current monitor output function)48

Low-side Switch ICs ................................... 50

SPF5002A (Surface-mount 4-circuits) .......... 50

SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52

SPF5012 (Surface-mount 4-circuits with Output Monitor) 54

1-3. Motor Driver ICs Stepper-motor Driver ICs ......................... 56

SLA4708M (50V, 1.5A) ................................... 56

SPF7211 (40V, 0.8A) ..................................... 58

DC Motor Driver ICs .................................... 60

SI-5300 (40V, 5A) ..................................... 60

SPF7301 (36V, 7A) ..................................... 62

1-4. HID Lamp Driver ICs SLA2402M (500V, 15A) .................................. 64

SLA2403M (500V, 7A) .................................... 68

SMA2409M (500V, 7A) ................................... 72

1-5. Custom ICs ..................................... 76

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Application Note for Regulator ICs

Temperature and ReliabilityReliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When mounting ICs on heatsinks, always apply silicone grease and firmly tighten. Air convection should actively be used in actual heat dissipation. The reliability of capacitors and coils, the peripheral components, is also closely related to temperature. A high operating temperature may reduce the service life. Exceeding the allowable temperature may cause coils to be burned or capacitors to be damaged. Make sure that output smoothing coils and input/output capacitors do not exceed their allowable temperature limit in operation. We recommend, in particular, to provide an ample margin for the ratings of coils to minimize heat generation.

Power Dissipation (PD)1. Dropper Type

PD = IO • [VIN (mean) - VO]

2. Switching Type

PD = VO • IO ( - 1) - VF • IO (1 - )

Efficiency depends on input/output conditions.

Refer to the efficiency characteristics.

VO : Output voltage

VIN: Input voltage

IO : Output current

: Efficiency

VF : Diode forward voltage

Heatsink DesignThe maximum junction temperature Tj (max) and the maximum case temperature Tc (max) given in the absolute maximum ratings are specific to each product type and must be strictly met. Thus, heatsink design must be performed in consideration of the condition of use which affects the maximum power dissipation PD (max) and the maximum ambient temperature Ta (max). To facilitate heatsink design, the relationship between these two parameters is presented in the Ta-PD characteristic graphs. Heatsink design must be performed in the following steps:

1. Obtain the maximum ambient temperature Ta (max) (within the set).

2. Obtain the maximum power dissipation PD (max).

3. Identify the intersection on the Ta-PD charac-teristic graph and obtain the size of the heatsink to be used.

The size of a heatsink has been obtained. In actual applications, a 10 to 20% derating factor is

generally used. Moreover, the heat dissipationcapacity of a heatsink is heavily dependent on how it is mounted. It is therefore important and recommended to measure the heatsink and case temperature in actual operating environments.

Setting DC Input VoltageObserve the following precautions when setting the DC input voltage: • VIN (min) must be at least the set output voltage

plus dropout voltage for the dropper type. It must be at least the recommended lowest input voltage for the switching type.

• VIN (max) must not exceed the DC input voltage of the electrical characteristics.

Screw TorqueScrew torque should be between 0.588 to 0.686 [N • m] (6.0 to 7.0 [kgf • cm]).

Recommended silicone greaseVolatile type silicone grease may produce cracks after elapse of long term, resulting in reducing heat radiation effect.Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink.

100 VO

VIN

7

Others

This product may not be connected in parallel.The switching type may not be used for current boosting and stepping up voltage.

Type Suppliers

G746 Shin-Etsu Chemical Co., Ltd.

YG6260 GE Toshiba Silicones Co., Ltd.

SC102 Dow Corning Toray Silicone Co., Ltd.

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Output ON

Output OFF

Output ON

Output OFF

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

Output Voltage

Dropout Voltage

Input Voltage

Quiescent Circuit Current

Output Voltage Temperature Coefficient

( Tj= 25ºC, VIN=14V unless otherwise specified)

VIN

VIN =12 to 16V, IO=0.4A

IO 0.4A

IO 1.0A

IO=0.4A, VIN=6 to 16V

IO=0 to 0.4A

IO=5mA, Ta = –10 to +100ºC

IO=0A

VC =2.7V

VC = 0.4V

f =100 to 120Hz

6 *2 30 *1 V

4.90 5.00 5.10 V

0.5

1.0

V

V

30 mV

±0.5

100 mV

54

3

dB

10 mA

1.2 A

2.0 V

0.8 V

20

–0.3

µA

mA

VO

VDIF

∆VO LINE

∆VO LOAD

mV/ºC∆VO/∆T

RREJ

Iq

IS1

VC, IH

VC, IL

IC, IH

IC, IL

Ripple Rejection

Overcurrent Protection Starting Current

Control Voltage

Control Current

Line Regulation

Load Regulation

*3

*4

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings(Ta = 25ºC)

DC Input Voltage

Output Control Terminal Voltage

Output Current

Power Dissipation

Junction Temperature

Operating Temperature

Storage Temperature

Junction to Case Thermal Resistance

Junction to Ambient-Air Thermal Resistance

VIN

VC

IO

PD1

PD2

Tj

TOP

Tstg

j-c

j-a

V

With infinite heatsink

Stand-alone without heatsink

Stand-alone without heatsink

V

A

W

W

ºC

ºC

ºC

ºC/W

ºC/W

35

VIN

1.0

18

1.5

– 40 to +125

– 40 to +100

– 40 to +125

5.5

66.7

*1

Vc

Ter

min

al

Equivalent Circuit Diagram

Standard Circuit Diagram

Features Output current of 1.0A 5-terminal type <output on/off control, variable output voltage (rise only)> Voltage accuracy of ±2% Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A Built-in overcurrent, overvoltage and thermal protection circuits Withstands external electromagnetic noises TO220 equivalent full-mold package

External Dimensions (unit: mm)

8

a

b

1 2 3 4 5

10.0±0.2

3.2±0.2

0.5

4.0±0

.2

7.9±0

.2

16.9

±0.3

0.95±0.15

0.85 –0.1

P1.7±0.7•4=6.8±0.7

4.2±0.2

2.8±0.2

2.6±0.1

3.9±0.7

8.2±0.7

0.45–0.1+0.2

(2.0

)

5.0

±0.6

(8.0

)

(17.

9)

(4.6

)

(4.3)

+0.2

1. GND2. VC (on/off)3. Vo4. Vosense5. VIN

a: Part No.b: Lot No.

(Forming No. 1101)

D

VDC input DC output

VC

1

OOIN

5 3

1

SI-3001S2 4

C1 C2

OPEN

GND1

2

5 3

4

VO

VO senseR3

R4

MIC

Tr1

R1

R2

VIN

Vc(on/off)

++

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

Notes:*1. Since PD(max) = (VIN –VO) • IO =18( W), VIN(max)and IO(max)may be limited depending on operating conditions. Refer to the

Ta-PD curve to compute the corresponding values.*2. Refer to the dropout voltage.*3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to –5%.*4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus,

LS-TTL direct driving is also possible.

a : Pre-regulatorb : Output ON/OFF controlc : Thermal protectiond : Over-input and overcurrent protection

e : Drive circuit f : Error amplifierg : Reference voltage

a

b

c

de f

g

Co : Output capacitor (47 to 100µF, 50V)C1, C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF).

These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures.

D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)

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9

00

0.5 1.0

0.5

0.4

0.3

0.2

0.1

00

5 10 15 20 25 30

5.1

5.0

4.9

1.0 (A)

0 (A)0.4 (A)

IO =

00

0.5

5.0

4.9

5.5 (V)

5.1

1.0

30 (V)12 to 16 (V)

VIN =

00

2 4 6 8 10

1

2

3

4

5

6

7

(Ω)5

(Ω)12

00

2 4 6 8 10

15

10

5

I = 0 (A)o

00

0.5 1.0 1.5 2.0

1

2

3

4

5

6

2.5 3.0

(V)5.5

(V)14

(V)20

(V)30

(V)10

00

1 2 3

1

2

3

4

6

4 5

5

OFF

14 (V)I = 0 (A)V =oIN

ON

00

125

1

2

3

4

6

5

130 135 140 145 150 155

6(A)I = 0

V = (V)oIN

00

5.0

4.9

5.1

100--50 50 150

5.5(V)14(V)

16(V) 12(V)30(V)

VIN =

VIN—IOUT condition

/0.412(V) (A)

(A)(A)(A)(A)

(V)(V)(V)(V)

/1.05.5

/0.414/0.416/ 030

0–20--30 20 6040 80 1000

5

10

15

20Use G746 silicone grease (Shin-Etsu Chemical) and aluminum heatsink.

With infinite heatsink

200•200•2mm (2.3ºC/W)

100•100•2mm (5.2ºC/W)

75•75•2mm (7.6ºC/W)

Without heatsink

100

4

3

2

1

5

6

3020 40 50

Note on Thermal Protection Characteristics:The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

Output current IO (A)

Output current IO (A)

Dro

po

ut v

olta

ge

VD

IF (V

)

Io vs VDIF Characteristicsc Line Regulation

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)O

utp

ut v

olta

ge

VO (V

)O

utp

ut v

olta

ge

VO (V

)

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)

Input voltage VIN (V)

Input voltage VIN (V)

Input voltage VIN (V) Input voltage VIN (V)

Load Regulation

Rise Characteristics Quiescent Circuit Current

Qui

esce

nt c

urre

nt

lq (m

A)

Overcurrent Protection Characteristics ON/OFF Control Characteristics

Output ON/OFF control voltage VC (V)

Thermal Protection Characteristics

Output Voltage Temperature Characteristics

Ambient temperature Ta (ºC)

Ambient temperature Ta (ºC)

Output current IO (A)

Operating temperature Ta (ºC)

Po

wer

Dis

sip

atio

n P

D (W

)

Ta—PD Characteristics Overvoltage Protection Characteristics

Load resistance

Electrical Characteristics

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

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Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

Output voltage

Dropout voltage

Input voltage

Quiescent circuit current

(Tj=25ºC, VIN=14V, IO=0.5A unless otherwise specified)

VIN

IO 0.5A

IO 0.8A

VIN=8 to 16V

IO=0 to 0.5A

IO=0A

f=100 to 120Hz

6 30 V

4.90 5.00 5.10 V

0.5

1.0

V

V

30 mV

100 mV

54

3

dB

10 mA

0.9 A

VO

VDIF

VO LINE

VO LOAD

RREJ

Iq

IS1

Ripple rejection

Overcurrent protection starting current

Line regulation

Load regulation

*3

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings(Ta=25ºC)

DC input voltage

Output current

Power Dissipation

Junction temperature

Operating temperature

Storage temperature

Junction to case thermal resistance

Junction to ambient-air thermal resistance

VIN

IO

PD1

PD2

Tj

TOP

Tstg

j-c

j-a

V

With infinite heatsink

Stand-alone without heatsink

Stand-alone without heatsink

A

W

W

ºC

ºC

ºC

ºC/W

ºC/W

35

0.8

22

1.8

–40 to +150

–40 to +100

–40 to +150

5.5

66.7

*2

Equivalent Circuit Diagram

Standard Circuit Diagram

External Dimensions (unit: mm)

10

Features 3-terminal IC regulator with 0.8A output current Voltage accuracy of ±2% Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent full-mold package

4•P1.7±0.15=6.8±0.15

10±0.2

4.2±0.2

2.8±0.2

2.6±0.15

3.2±0.2

2 m

ax

0.5

4±0.2

7.9

±0.2

16.9

±0.3

(13.

5)

0.94±0.15

0.45

a

b

Terminal connections1. VIN

2. (NC)3. GND4. (NC)5. VO

a: Part No.b: Lot No.

0.85+0.2–0.1

+0.2–0.1

(root dimensions)

1 2 3 4 5

(Forming No. 1115)

D

VDC input DC output

VC

1

OOIN

1

3

SI-3003S

C1 C2

5

2N.C N.C

4+ +

VIN VO

1

3

5

GND

TSDERR

OCP

DET

REFD

RIV

E

Dropper Type Regulator ICs [3-terminal] SI-3003S

Notes:*1. Since PD(max) = (VIN–VO) • IO=22 (W), VIN(max) and IO (max) may be limited depending on operating conditions. Refer to the

Ta—PD curve to compute the corresponding values.*2. Refer to the dropout voltage.*3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, IO=0.5A) drops to –5%.

Co : Output capacitor (47 to 100µF, 50V) C1,C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF).

These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures.

D1 : Protection diode. Required as protection against reverse biasing between input and output.

(Recommended diode: Sanken EU2Z.)

*2 *1

*2

*1

*2

*1

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11

0.2

0.1

0.3

0.4

0.5

00 0.2 0.4 0.6 0.8 0

4.9

5.0

5.1

05 10 15 20 25 3530

0

2

1

3

4

6

5

02 4 6 108

00

4.9

5.0

5.1

0.2 0.4 0.6 0.8

IO=0A =0.2A=0.5A=0.8A

IO=0A =0.5A=0.8A

IO=0.8A =0.5A =0.2A =0A

IO=0.5, 0.8A =0.2A =0A

VIN=35V =25V =14V

=6V

5.0

4.9

5.1

–50 0 50 100 150

VIN / IO:

6V / 0.8A14V / 0.5A

30V / 0A

0

100

50

150

200

250

05 10 15 20 25 3530

00

4

3

2

1

5

6

0.5 1.0 1.5 2.0 2.5

VIN=6V

14V

35V

25V

2

1

3

4

5

6

0120 140 160 180 200

VIN=6VIO=5mA

10

5

15

20

25

0–40 0 40 80 100

200 • 200 • 2mm(2.3ºC/W)

100 • 100 • 2mm(5.2ºC/W)

75 • 75 • 2mm(7.6ºC/W)

Note on Thermal Protection Characteristics:The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

Output current IO (A)

Output current IO (A)

Dro

po

ut v

olta

ge

VD

IF (V

)

Io vs VDIF Characteristics Line Regulation

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)O

utp

ut v

olta

ge

VO (V

)

Out

put

vo

ltag

e V

O (V

)O

utp

ut v

olta

ge

VO (V

)

Out

put

vo

ltag

e V

O (V

)

Input voltage VIN (V)

Input voltage VIN (V) Input voltage VIN (V)

Load Regulation

Rise Characteristics Circuit Current

Thermal Protection Characteristics

Gro

und

cur

rent

lg

(mA

)

Overcurrent Protection Characteristics

Output Voltage Temperature Characteristics

Ambient temperature Ta (ºC)

Ambient temperature Ta (ºC)

Output current IO (A)

Operating temperature Ta (ºC)

Po

wer

Dis

sip

atio

n P

D (W

)

Ta—PD Characteristics

With silicone greaseHeatsink: aluminum

With infinite heatsink

Without heatsink

Electrical Characteristics

Dropper Type Regulator ICs [3-terminal] SI-3003S

Page 14: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

DC input voltage

Battery reverse connection

Output control terminal voltage

Output current

Power Dissipation

Output voltage

Dropout voltage

Input voltage

Quiescent circuit current

Overvoltage protection starting voltage

Thermal protection starting temperature

(Tj=25ºC, VIN=14V unless otherwise specified)

Channel-channel voltage difference

Junction Temperature

Operating temperature

Storage temperature

Junction to case thermal resistance

Junction to ambient-air thermal resistance

VIN

VINB

VC

VIN

IO=0.05A

IO=0.3A

IO1 0.05A

IO2 0.4A

VIN=6 to 18V, IO=0.05A

IO1=0 to 0.05A

VIN=6 to 18V, IO=0.3A

IO2=0 to 0.3A

IO1=0A, VC=0V

VC=4.8V

VC=3.2V

f=100 to 120Hz

f=100 to 120Hz

IO1 =0 to 0.05AIO2 =0 to 0.3A

6 35 V

4.80 5.00 5.20 V

4.80 5.00 5.20 V

–0.1 0.1 V

1.0 V

1.0 V

10 30 mV

10 30 mV

30 70 mV

40 70 mV

54 dB

54 dB

0.8 mA

0.1 A

0.5 A

4.2 4.5 4.8 V

3.2 3.5 3.8 V

100 µA

–100 µA

35 V

130 ºC

VO1

VO2

VO

VDIF1

VDIF2

VO LINE1

VO LINE2

VO LOAD1

VO LOAD2

RREJ1

RREJ2

Iq

I (S1) 1

I (S1) 2

VCH

VCL

ICH

ICL

VOVP

TTSD

IO1

IO2

PD1

PD2

Tj

TOP

Tstg

j-c

j-a

CH1

CH2

CH1

CH2

CH1

CH2

CH1

CH2

CH1

CH2

Ripple rejectionCH1

CH2

Overcurrent protection starting current

CH1

CH2

Output control voltageOutput ON

Output OFF

Output ON

Output OFFOutput control current

V

V One minute

With infinite heatsink

Stand-alone without heatsink

Stand-alone without heatsink

V

A

A

W

W

ºC

ºC

ºC

ºC/W

ºC/W

40

–13

VIN

0.07

0.4

18

1.5

–40 to +125

–40 to +115

–40 to +125

5.5

66.7

(VO1—VO2)

Line regulation

Load regulation

Equivalent Circuit Diagram

Standard Circuit Diagram

External Dimensions (unit: mm)Features Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold package

1 2 3 4 5

10.0

3.2

0.5

4.0

7.9

16.9

0.95

0.85

P1.7 • 4 = 6.8

4.2 ±0.2

2.8 ±0.2

2.6 ±0.1

3.9±0.7 ±0.7

±0.15

8.2 ±0.7

0.45–0.1+0.2

–0.1+0.2

(2.0

)5.

0±0

.6(8

.0)

(17.

9)

(4.6

)

(4.3)

1. VIN2. VC (on/off)3. GND4. VO15. VO2

a: Part No.b: Lot No.

(Forming No. 1101)

VIN

VC

VO1

VO2

GND

1

2

4

5

3

REF

DR

IVE

DR

IVE

DET

OCP

ERRTSD

OCP

DETOVP

CONT

ERR

CIN

VC

+

D1

VIN

1SI-3101S

GND

CO1

VO2

D3

23

4

5

D2

VO1

+ +

CO2

12

Dropper Type Regulator ICs [2-output] SI-3101S

Notes:*1. Since PD(max) = (VIN – VO) • IO1+ (VIN – VO2) • IO2 = 18 (W), VIN (max), IO1(max) and IO2 (max) may be limited depending on

operating conditions. Refer to the Ta—PD curve to compute the corresponding values.*2. Refer to the dropout voltage.*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to –5%.*4. Overvoltage protection circuit is built only in CH2 (VO2 side).*5. The indicated temperatures are junction temperatures.*6. All terminals, except VIN and GND, are open.

CO1 : Output capacitor (47 to 100µF, 50V)CO2 : Output capacitor (47 to 100µF, 50V)*1 CIN : Input capacitors (approx. 47µF).

Tantalum capacitors are recommended for CO1, CO2

and CIN, especially at low temperatures.*2D1, D2, D3 : Protection diode.

Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)

*6

*1

*1

*1*2

*3

*3

*4

*5

±0.2

±0.2

±0.3

±0.2

±0.2

b

a

Page 15: datashet automotriz

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80

1

2

3

4

5

6

(V)5(A)I = 0

V =O1

C

4.5V

6V14V22V

V =IN

00

5 10 15 20 25

4.9

5.0

5.1

0mA

50mA

70mA

(A)I = 0O2

(V)5V =C

IO1=

00

0.05

1

2

3

4

5

6

0.1 0.15

(V)5(A)I = 0

V =O2

C

22V14V6V

V =

4.5V

0 10 20 30 6040 50 70

4.9

5.0

5.1

0

(A)I = 0O2

(V)5V =C

V =IN

6V 14V22V

0 0.1 0.2 0.3 0.60.4 0.5

4.9

5.0

5.1

0

I = 0O1

5V =C

V =IN

6V,14V

22V

0 102 4 6 80

6

5

4

2

1

3 ∞

71.4Ω

100ΩLoad resistor

0 20

10

5

05 10 15

(A)I = 0O1

(V)0V =c

0 1 2 3 4 5 60

5

6

4

3

2

1

V =IN

14V, 22V 6V

100

20 30 40

1

2

3

4

5

6

VO1

(V)5V =C

(mA)I= 5I =O1 O2 VO2

0 130 140 150 1600

1

2

3

4

5

6(V)6V =

(mA)I= 5I =O1 O2

IN

IN

0--20--30 20 6040 80 1000

5

10

15

20

200 • 200 • 2mm (2.3ºC/W)

100 • 100 • 2mm (5.2ºC/W)

75 • 75 • 2mm (7.6ºC/W)

115

OFF ON

00

5 10 15 20 25

4.9

5.0

5.1

(A)I = 0O1

(V)5V =C

0.5A

0.3A

I =O2

0A

13

Output current IO (A)

Line Regulation (2)

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O2

(V)

Out

put

vo

ltag

e V

O (V

)O

utp

ut v

olta

ge

VO

1 (V

)

Out

put

vo

ltag

e V

O1

(V)

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)

Input voltage V IN (V)

Line Regulation (1)

Out

put

vo

ltag

e V

O (V

)

Input voltage VIN (V)

Input voltage VIN (V)

Input voltage VIN (V) Input voltage VIN (V)

Load Regulation (1)

Rise Characteristics Quiescent Circuit Current

Thermal Protection Characteristics

Qui

esce

nt c

urre

nt

lq (m

A)

Overcurrent Protection Characteristics (1)

Output current IO (A)

Out

put

vo

ltag

e V

O2

(V)

Overcurrent Protection Characteristics (2) ON/OFF Control Characteristics

Output ON/OFF control voltage VC (V)

Ambient temperature Ta (ºC)

Output current IO (mA)

Out

put

vo

ltag

e V

O (V

)

Load Regulation (2)

Output current IO (A)

Operating temperature Ta (ºC)

Po

wer

Dis

sip

atio

n P

D (W

)

Ta—PD Characteristics Overvoltage Protection Characteristics

With silicone grease G746 (Shin-Etsu Chemical)Heatsink: aluminum

With infinite heatsink

Without heatsink

Note on Thermal Protection Characteristics:The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

(A)(V)

Electrical Characteristics

Dropper Type Regulator ICs [2-output] SI-3101S

Page 16: datashet automotriz

Features Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold miniature package

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

External Dimensions (unit: mm)

Equivalent Circuit Diagram

Standard Circuit Diagram

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

DC input voltage

Battery reverse connection

Output control terminal voltage

Output current

Power Dissipation

Output voltage

Dropout voltage

Input voltage

Quiescent circuit current

Overvoltage protection starting voltage

Thermal protection starting temperature

(Tj = 25ºC, VIN = 14V unless otherwise specified)

Junction temperature

Operating temperature

Storage temperature

Junction to case thermal resistance

Junction to ambient-air thermal resistance

VIN

VINB

VC

VIN

IO = 0.04A

IO = 0.1A

IO1 0.04A

IO2 0.1A

VIN = 6 to 30V, IO = 0.04A

IO1 = 0 to 0.04A

VIN = 6 to 30V, IO = 0.1A

IO2 = 0 to 0.1A

IO1 = 0A, VC = 0V

VC = 4.8V

VC = 3.2V

f = 100 to 120Hz

f = 100 to 120Hz

IO1 =0 to 0.04AIO2 =0 to 0.1A

6 30 V

4.80 5.00 5.20 V

4.80 5.00 5.20 V

–0.1 0.1 V

1.0 V

1.0 V

10 50 mV

10 50 mV

30 70 mV

40 70 mV

54 dB

54 dB

0.8 mA

0.06 A

0.15 A

4.2 4.5 4.8 V

3.2 3.5 3.8 V

100 µA

–100 µA

30 V

151 ºC

VO1

VO2

VO

VDIF1

VDIF2

VO LINE1

VO LINE2

VO LOAD1

VO LOAD2

RREJ1

RREJ2

Iq

I (S1) 1

I (S1) 2

VCH

VCL

ICH

ICL

VOVP

TTSD

IO1

IO2

PD1

PD2

Tj

TOP

Tstg

j-c

j-a

CH1

CH2

CH1

CH2

CH1

CH2

CH1

CH2

CH1

CH2

Ripple rejectionCH1

CH2

Overcurrent protection starting current

CH1

CH2

Output control voltageOutput ON

Output OFF

Output ON

Output OFFOutput control current

V

V One minute

With infinite heatsink

Stand-alone without heatsink

Stand-alone without heatsink

V

A

A

W

W

ºC

ºC

ºC

ºC/W

ºC/W

35

–13

VIN

0.04

0.1

22

1.8

–40 to +150

–40 to +105

–40 to +150

5.5

66.7

Line regulation

Load regulation

a

b

1 2 3 4 5

10.0

3.2

0.5

4.0

7.9

16.9

0.95

0.85

P1.7 • 4 = 6.8

4.2 ±0.2

2.8 ±0.2

2.6 ±0.1

3.9±0.7±0.7 ±0.7

8.2±0.7

0.45–0.1+0.2

–0.1+0.2

(2.0

)5.

0±0

.6(8

.0)

(17.

9)

(4.6

)

(4.3)

1. VIN2. VC (on/off)3. GND4. VO15. VO2

a: Part No.b: Lot No.

(Forming No. 1101)

VIN

VC

VO1

VO2

GND

1

2

4

5

3

REFD

RIV

ED

RIV

E

DET

OCP

ERRTSD

OCP

DETOVP

CONT

ERR

CIN

VC

+

D1

VIN

1SI-3102S

GND

CO1

VO2

D3

23

4

5

D2

VO1

+ +

CO2

14

Dropper Type Regulator ICs [2-output] SI-3102S

Notes:*1. Since PD(max) = (VIN – VO) • IO1+ (VIN – VO2) • IO2 = 22 (W), VIN (max), IO1(max) and IO2 (max) may be limited depending on

operating conditions. Refer to the Ta—PD curve to compute the corresponding values.*2. Refer to the dropout voltage.*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to –5%.*4. Overvoltage protection circuit is built only in CH2 (VO2 side).*5. The indicated temperatures are junction temperatures.*6. All terminals, except VIN and GND, are open.

CO1 : Output capacitor (47 to 100µF, 50V)CO2 : Output capacitor (47 to 100µF, 50V)*1 CIN : Input capacitors (approx. 47µF).

Tantalum capacitors are recommended, for CO1, CO2 and CIN, especially at low temperatures.

*2D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)

*6

*1

*1

*1*2

*3

*3

*4

*5

Channel-channel voltage difference(VO1—VO2)

±0.2

±0.2

±0.2

±0.2

±0.3

±0.15

Page 17: datashet automotriz

0

4.90

4.95

5.00

5.05

5.10

4.855 10 15 20 25 30 35 0

4.90

4.95

5.00

5.05

5.10

4.855 10 15 20 25 30 35 0

4.90

4.95

5.00

5.05

5.10

4.8510 20 30 5040

VIN = VC

IO2 = 5mAVIN = VC

IO1 = 5mA

VC = 0VIO1 = 0A

0A20mA

40mA

IO1 = 0A50mA

100mA

IO2 =

VIN = VC

6V14V

30V

VIN =

0

4.90

4.95

5.00

5.05

5.10

4.8520 40 60 10080

0

2

1

3

4

5

6

020 40 60 12010080 0

1

2

3

4

5

6

00.1 0.2 0.50.40.3

26

1

2

3

4

5

6

028 30 38363432

0

2

3

4

5

6

0

1

1 2 3 5 6 74 0

4

6

8

10

12

0

2

5 10 15 25 30 3520

VIN = VC

VIN = VC

IO2 = 5mAVIN = VC

IO1 = 5mA

VIN = VC

IO2 = 5mA

0

1

2

3

4

5

6

01 2 6543

VIN = 14VIO2 = 5mA

100

1

2

3

4

5

6

0120 140 240220200180 –40

5

10

15

20

25

0–20 0 20 16014012060 80 10040

VIN = 6VIO1 = IO2 = 5mA

6V,14V

30V

VIN =

6V14V30V

VIN = 6V

14V30V

VIN =

IO1 = 0A20mA40mA

200 • 200 • 2mm(2.3ºC/W)

100 • 100 • 2mm(5.2ºC/W)

75 • 75 • 2mm(7.6ºC/W)

OFF

ON

15

Output current IO (mA)

Line Regulation (2)

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O2

(V)

Out

put

vo

ltag

e V

O (V

)O

utp

ut v

olta

ge

VO

1 (V

)

Out

put

vo

ltag

e V

O1

(V)

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)

Input voltage VIN (V)

Line Regulation (1)

Out

put

vo

ltag

e V

O (V

)

Input voltage V IN (V)

Input voltage VIN (V)

Input voltage VIN (V) Input voltage VIN (V)

Load Regulation (1)

Rise Characteristics Quiescent Circuit Current

Thermal Protection Characteristics

Qui

esce

nt c

urre

nt

lq (m

A)

Overcurrent Protection Characteristics (1)

Output current IO2 (A)

Out

put

vo

ltag

e V

O2

(V)

Overcurrent Protection Characteristics (2) ON/OFF Control Characteristics

Output ON/OFF control voltage VC (V)

Ambient temperature Ta (ºC)

Output current IO (mA)

Out

put

vo

ltag

e V

O (V

)

Load Regulation (2)

Output current IO (mA)

Operating temperature Ta (ºC)

Po

wer

Dis

sip

atio

n P

D (W

)

Ta—PD Characteristics Overvoltage Protection Characteristics

With silicone grease G746 (Shin-Etsu Chemical)Heatsink: aluminum

With infinite heatsink

Without heatsink

Note on Thermal Protection Characteristics:The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

VO1

VO2

Electrical Characteristics

Dropper Type Regulator ICs [2-output] SI-3102S

Page 18: datashet automotriz

Parameter Symbol Unit ConditionsRatingsApplicable terminals

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

Terminal voltage

Storage temperature

NMI judge voltage

VSC output voltage

VS output voltage

Reset signal output time

Reset cycle

Standby signal output time

(Ta = 25°C unless otherwise specified)

Operating temperature

Power dissipation

VIN (1)

VIN (2)

VSC

VCC = 5.2 to 16V, IO = –350mA

BAI = 4.2 to 16V, ISC = –0.2mA

NMIC = 0V

V

5

4

10

75

50

25

5.03

3.8

4.97

4.2

V

0.3

5.1 V

10

5

V

µs

ms

µs

VS

VS –VSC voltage difference VCC = 5.2V, ISC = –50mA0.3 V∆VS

BAI input current BAI = 4.9 to 16V, ISC = –0.2mA0.6 mAIBAI

VCC input current VCC = 3 to 16V 5 mAICC

VB input current VCC = 3 to 16V25 mAIB

VS input current VCC = BAI = 3 to 16V, ISC = 0mA20 mAIS

NMIC input current VCC = BAI = 14V–0.1 –0.4 mAINMIC

W/D input current VCC = BAI = 14V–0.1 –0.4 mAIW/D

RSTTC input current VCC = BAI = 14V–0.1

5

–0.4 mAIRTC

4.9

–0.04

–0.04

–0.04

0.12

VNIL

∆VN

VNOH

VNOL

VSOH

VSOL

VROH

VROL

VUOH

VUOL

VTOH

VTOL

TNR

W/D signal stop detect period 10 12.5

50

80

10

2

40

5

VS–0.5

VS–0.5

VS–0.5

VS–0.5

VS–0.5

W/D fail judge frequency kHzFFH

Out enable release time msTWE

msTWS

Reset period 20

40

60

msTRP

TRC

Reset release time 90

60

30

15

msTRE

Standby release time 20 ms

V

V

V

V

V

V

V

V

V

V

TST

0.6

0.6

0.6

0.6

0.6

TRS

Tstg

Top

PD

Lo

NMI output voltage

STBY output voltage

RESET output voltage

OUTE output voltage

OUTE output voltage

Isource = –1mA

Isink = 0.5mA

Isource = –1mA

Isink = 0.5mA

Isource = –1mA

Isink = 0.5mA

Isource = –1mA

Isink = 0.5mA

Isource = –1mA

Isink = 0.5mA

Hi

Lo

Hi

Lo

Hi

Lo

Hi

Lo

Hi

Lo

V

°C

°C

W Ta = 25°C

–0.3 to 32BAI, VCC, VNMIC

VS, NMIC, RSTTC, OUTE

VSC, NMI, RESET, OUTE

W/D, STBY

V–0.3 to 7

–40 to +125

–40 to +105

1.4

Standard Connection Diagram

Circuit Block Diagram

Timing Chart

External Dimensions (unit: mm)Features High accuracy output of 5V±30mV Memory backup power supply 4V±0.2V Power on reset function Supply voltage monitor function Watch dog timer CR not required for setting external time constant

Dropper Type System Regulator ICs SI-3322S

16

Notes: The direction of current flowing into the IC is positive (+).

VCCVNIL

VNIL+∆VN

VS

0VVSC

NMI

TST

TRE

TWS

TRP

TRCTWE

TNR

TRSSTBY

RESET

OUTE

W/D

OUTE

HI or Lo

Power on Power offW/D input stop (microcomputer

runaway)

W/D input start (microcomputer

resets)

0V

(BAI=14V)

IG. SW

BATT

47µF

47µF

47µFA/D converter, I/O circuit, etc.

68µF

+

+

+

+120Ω

R1

R2

6VCC VCC AVCC

OUTE OUTE

VB VS VSC

NMIBAI

GND

VNMIC

1

8

13 11 10 16 14

5 4 3 2

9

15

12

SI-3322S

OPEN or GND

Logic circuit

Micro-computer

NMI

NMI Control

STBY STBY

RESET RESET

NMIC W/D W/D GNDRSTTC

R1,R2: NMI judge voltage (5V typ) variable resistor NMI judge voltage (R1 + R2) • 2.5V/R2 R1, R2 2k Normally, VNMIC terminal is open.

RSTTC: Normally open. GND connected when TRE is to be halved.

VCC VB VS VSC

NMI

VNMIC

BAI

6

1

GND 8

+ ++

5 4

Start circuit

NMI judgecircuit

Reference oscillation circuit

Main regulator

Backup regulator

Current limit circuit

3 2

9

15

+–

STBY

12

14

RESET

RSTTC16

W/D1011

Counter

OUTE control circuit

OUTEOUTE13

NMIC

STBY control circuit

RESETcontrol circuit

Frequency comparator

+–

+–

Index area

1 2 3

SI-3322SSKA

Coplanarity (height difference among leads) 0.1mm max.

Adhesive surface

Lot

Lot

• 45°

2.352.65

10.1010.50

7.407.60

0.250.75

0.401.27

10.0010.65

0.100.30

0.230.32

0.330.51

1.27 BSC

0° to 8°

Hysteresis

Page 19: datashet automotriz

17

Electrical Characteristics

0 5 10 15 20 25

VS (V

)

VCC (V)

5.03

5.02

5.01

5

4.99

4.98

4.97

5.03

5.02

5.01

5

4.99

4.98

4.97 0

1

2

3

4

5

6

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VS (V

)

IO (A)

0 0.5 1 1.5 20

1

2

3

4

5

6

VS (V

)

IO (A)

0 5 10 15 200

0

100

200

300

400

500

0

100

200

300

400

500

5

10

15

20

0

1

2

3

4

5

I S (m

A)

VCC (V)

0 5 10 15 200

5

10

15

20

I B (m

A)

VCC (V)

0 5 10 15 200

2

4

I CC (m

A)

VCC (V)

3

1

5

0 2 4 6 8 10

VS (V

)

VCC (V)

0

0 20 40 60 80 100 120

5 10 15 200

1

2

3

4

5

6

0 2 4 6 8 10

0

1

2

3

4

5

6

4.5 4.7 4.9 5.1 5.3 5.50 5 10 15 20

VS

C (V

)

VS

C (V

)

I BA

I (µA

)

∆VS (m

V)

NM

I (V

)

BAI (V) ISC (A)

BAI (V) ISC (mA) VCC (V)

IO = 0A

0.4A

IO = 0A

0.4A

VCC = 5.2V12V

VCC = 7V

12V

No load

No load

No load

Dropper Type System Regulator ICs SI-3322S

VS Load Regulation VS Line Regulation VS Rise Characteristics

VCC Input Current VB Input Current

BAI Input Current

VSC Rise Characteristics VSC Overcurrent Protection Characteristics VS Input Current

VS Overcurrent Protection Characteristics

NMI Judge Voltage Characteristics VS-VSC Voltage Difference

Page 20: datashet automotriz

Parameter Symbol Unit RemarksRatings

Absolute Maximum Ratings

Electrical CharacteristicsParameter Symbol min typ max Unit Conditions

Ratings

DC input voltage

Output control terminal voltage

Output current CH1

CH2

MODE terminal input voltage

W/D/C terminal input voltage

TC terminal input voltage

CK terminal input voltage

Vo1-fail terminal output voltage

Reset terminal output voltage

Junction temperature

Storage temperature

Thermal resistance (junction to case) Thermal resistance (junction to ambient air)

Input voltage

CH1 Output voltage CH1

CH2 CH1

Dropout voltage CH1CH2

Ripple rejectionCH1CH2

Quiescent circuit current GND current

CH1CH2CH1CH2

EN output control voltage

ON

OFFVo1-fail terminal LOW voltageVo1-fail terminal HI voltageReset terminal LOW voltageReset terminal HI voltage

CH1Reset detect voltage

CH2

CH1CH2

Power on reset delay timeW/D timeW/D pulse timeMODE terminal control voltage

ONOFF

W/D/C terminal control voltageONOFF

CK terminal control voltageON

OFF

VIN

EN

Io1

Io2

MODE

W/D/C

TC

CK

Vo1-fail

RESET

Tj

Tstg

j-c

j-a

–13 to 35

40

–0.3 to 35

40

0.4

0.2

–0.3 to 7

–40 to 150

–40 to 150

4.1

38

VIN

Vo1 Vo1 Vo2

VDIF11VDIF12VDIF2RREJ1RREJ2

Iq

IGND

Is11Is21Is21Is22

VENth

IENH1IENH2IENL

VfailLVfailHVRSLVRSH

Vo1thHVo1thLVo2thHVo2thL∆Vo1th∆Vo2th

tdly

twd

twdp

VmodethImodeHImodeL

Vw/d/cthIw/d/cHIw/d/cLVckthIckHIckL

Io1 = 0.4AIo1 = 0.2A, Tj = 25°CIo2 = 0.2A

f = 100 to 200Hz

VIN = 16V, EN = 0VVIN = 35V, EN = 0V

Io1 = Io2 = 0.2AVo1 = 4.5VVo2 = 2.8VVo1 = 0VVo2 = 0VTj = –40 to 125°C*8

EN = 6.4V, Tj = –40 to 125°CEN = 3.51V, Tj = –40 to 125°CEN = 0V, Tj = –40 to 125°CIsink = 250µA, (Pull-up resistance 20kΩ typ)Isource = 15µAIsink = 250µA, (Pull-up resistance 20kΩ typ)Isource = 15µAVrs, Vfail 4.5VVrs, Vfail 0.8VVrs 3.0VVrs 0.8V∆Vo1th = Vo1thH-Vo1thL∆Vo2th = Vo2thH-Vo2thLMin. set time: 6mSMin. set time: 4mSMin. set time: 400µS

MODE = 5VMODE = 0V, Tj = –40 to 125°C*7

W/D/C = 5VW/D/C = 0V, Tj = –40 to 125°CMin. clock pulse time = 5µS (Duty 50%)CK = 5VCK = 0V, Tj = –40 to 125°C

V

V

V

db

µA

mAmA

A

A

V

µA

VVVVVVVVVVSSSV

µA

V

µA

V

µA

5.00 5.00 3.30

545410505

70

0.72 • Rtc • Ctc0.54 • Rtc • Ctc0.06 • Rtc • Ctc

Vo1+VDIF1 *3

4.90 4.85 3.15

0.4020.2010.4020.2011.00.9

–1.0

Vo1–0.8V *5

Vo1–0.8V *5

4.05

3.00

0.70 • Rtc • Ctc0.52 • Rtc • Ctc0.04 • Rtc • Ctc

1.0

–1.01.0

–1.01.0

–1.0

35 *4

5.10 5.15 3.45 0.5

0.250.5

5025010

1001.800.801.800.803.53.550301.00.5

0.5

Vo1 • 0.97

Vo2 • 0.985

0.2550.105

0.74 • Rtc • Ctc0.56 • Rtc • Ctc0.08 • Rtc • Ctc

3.02001.03.02001.03.02001.0

V

V

A

V

°C°C

°C/W

°C/W

Reverse connection 1 min max.

400mS

400mS

With infinite heatsink

With glass epoxy + copper foil board (size 5.0 x 7.4cm; t: glass epoxy = 1.6mm/copper foil = 18µm)

External Dimensions (unit: mm)Features Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1)

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004

18

Notes:*3: Refer to dropout voltage.*4: Since PD(max) = (VIN– VO1) • (IO1+ IO2) + (VIN • Iq) + (VO1– VO2) • IO2 = 30W, VIN(max), IO1(max) and IO2(max) may be limited depending on operating conditions.*5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits.*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155 °C (min.) and 165°C (typ). These values represent the design warranty.*7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur.*8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150°C is 16mS (0.32V/mS) max.

VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = –40 to 125°CVIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = –40 to 150°CVIN = Vo2+VDIF1+VDIF2 to 18V, Io1 = 0 to 0.2A

12.2±0.2

1.0

2.5±0

.27.

5±0.2

10.5±0.2

1.27±0.25

16

1 8

9

+0.1–0.05

0.4+0.15–0.05

0.25+0.15–0.05

2.0

+0.

2–

0.8

Fin thickness

Standard Connection Diagram

Timing Chart

+ +

+

+

D1

D2

Vin

EN

MODECin

GNDW/D/C CK TC

RESET

Vo1

Co1

Rtc

CtcCo2

Vo1

Vo2

Vo1 fail

Battery

SPF3004

Cin: Capacitor (39µF) for oscillation preventionCO1: Output capacitor (39µF)CO2: Output capacitor (39µF) Tantalum capacitors are recommended especially for low temperatures.D1, D2: Protection diodes. Required as protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).

Vin

EN

Vo1

Vo1 fail(Vo1 pull-up)

Vo1 pull-up status

Reset operation

Reset operation

OCP operation

EN (ON) operation EN (OFF) operation

OCP operation

W/D/C(Vo1 system connection) W/D

Stop period

TC(3.3 pull-up)

Vo2

RESET

CKOpen status

Open status

twdp

twd

tdly tdly

tdly-twdp

Vmodeth

Vo2thLVo2thH

Vo1thH Vo1thL

(Ta=25ºC)

Overcurrent protection starting current

Residual current at a short

EN output control current

Reset detect voltage hysteresis width

MODE terminal control current

W/D/C terminal control current

CK terminal control current

Load

Load

MODE(Vo1 system connection)

Page 21: datashet automotriz

19

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004

Electrical Characteristics

0 2 4 6 8 100

4

2

6

-40 0 25 50 85 125 1500

20

10

40

30

0 0.2 0.4 0.60

0.5

1.0

0 10 20 30 40

4.90

5.00

5.10

IO1=0A 0.2A 0.4A

0 10 20 30 40

3.40

3.30

3.50

IO2=0A 0.1A 0.2A

1 2 3 40

4

2

6

0

5.10

5.00

4.90

0 0.1 0.2 0.3 0.4

VIN=6V 10V 14V 18V

0 0.05 0.10 0.15 0.200

3.50

3.40

3.30

VIN=6V 10V 14V 18V

0

20

40

10 20 30 40

IO1=0.4A

IO1=0.2AIO1=0A

IO2=0A 0.2A

IO1=0A 0.4A

100 120 140 160 200180

2

6

4

IO1=5mA

0 0.5 1.00

4

2

6

0 0.2 0.4 0.60

4

2

VIN=6V 10V 14V 18V

VIN=6V 10V 14V 18V

Infinite heatsink equivalent (Tc=25°C)

Copper foil area (5.0•7.4mm, t=1µm)

Line Regulation (V01) Rise Characteristics of Output Voltage Line Regulation (V02)

Load Regulation (V02) Dropout Voltage (V01)

Thermal Protection Characteristics

Overcurrent Protection Characteristics (V01) Overcurrent Protection Characteristics (V02) GND Current

Load Regulation (V01)

Ta—PD Characteristics EN Terminal Output Voltage

Out

put

vo

ltag

e V

O1

(V)

GN

D c

urre

nt

I GN

D (m

A)

Out

put

vo

ltag

e V

O1

(V)

Out

put

vo

ltag

e V

O1

(V)

Out

put

vo

ltag

e V

O1

(V)

Out

put

vo

ltag

e V

O2

(V)

Out

put

vo

ltag

e V

O2

(V)

Out

put

vo

ltag

e V

O1,

VO

2 (V

)

Dro

po

ut v

olta

ge

V

dif1

(V)

Out

put

vo

ltag

e V

O2

(V)

Out

put

vo

ltag

e V

O1

(V)

Po

wer

dis

sip

atio

n P

D (W

)

Output current IO1 (A)

Input voltage VIN (V)Input voltage V IN (V)

EN terminal voltage VEN (V)

Output current IO2 (A) Output current IO1 (A)

Output current IO2 (A)Input voltage VIN (V)

Ambient temperature Ta (ºC)

Input voltage VIN (V)

Output current IO1 (A)

Operating temperature Ta (ºC)

Page 22: datashet automotriz

Parameter Symbol Unit RemarksRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

DC input voltage

Vo1, Vo2 output control terminal voltage

Vo2 output control terminal voltage

Output current CH1

CH2

TC terminal input voltage

CK terminal input voltage

W/D/C terminal input voltage

Reset terminal output voltage

Power dissipation

Junction temperature

Operating temperature

Storage temperature

Input voltage

Output voltageCH1

CH2

Dropout voltage CH1

CH2

Ripple rejectionCH1

CH2

Quiescent circuit current

GND current

CH1

CH2

CH1

CH2

EN output control voltage

ON

OFF

Reset terminal LOW voltage

Reset terminal HI voltage

Reset detect voltage CH

Power on reset delay time

W/D time

W/D pulse time

CK terminal control voltage

ON

OFF

Vc output control voltage

Vc output control current

W/D/C terminal control voltage

ON

OFF

VIN1

VIN2

EN

VC

Io1

Io2

TC

CK

W/D/C

RESET

PD1

PD2

Tj

Top

Tstg

j-c

j-a

–13 to 35

–0.3 to 35

–0.3 to 35

0.4

0.2

–0.3 to 7

18.6

2.97

–40 to 150

–40 to 105

–40 to 150

6.7

42

VIN1, 2

Vo1

Vo2

VDIF1

VDIF2

RREJ1

RREJ2

Iq

IGND

Is11

Is21

Is21

Is22

VENth

IENH

IENL

VRSL

VRSH

Vo1thH

Vo1thL

tdly

twd

twdp

Vckth

IckH

IckL

Vcth

IcH

IcL

Vw/d/cth

Iw/d/cH

Iw/d/cL

VIN1 = 6 to 18V, Io = 0 to 0.3A

VIN2 = 6 to 18V, Io = 0 to 0.3A

f = 100 to 120Hz

VIN1 = 16V, VEN = 0V

VIN1 = 35V, VEN = 0V

Io1 = Io2 = 0.2A

Vo1 = 4.5V

Vo2 = 4.5V

Vo1 = 0V

Vo2 = 0V

EN = 5V

EN = 0V

Isink = 250µA (Pull-up resistance 20kΩ typ)

Isource = 15µA

Vrs 4.5V

Vrs 0.8V

Min. set time: 6mS

Min. set time: 4mS

Min. set time: 400µS

VCK = 5V

VCK = 0V

Vc = 5V

Vc = 0V

VW/D/C = 5V

VW/D/C = 0V

V

V

V

db

µA

mA

mA

A

A

V

µA

V

V

V

V

S

S

S

V

µA

V

µA

V

µA

5.00

5.00

54

54

10

50

5

70

1.26 • Rtc • Ctc

1.03 • Rtc • Ctc

0.13 • Rtc • Ctc

Vo1+VDIF1

4.85

4.85

0.402

0.201

0.402

0.201

0.9

–1.0

Vo1-0.8V

4.05

1.18 • Rtc • Ctc

0.93 • Rtc • Ctc

0.07 • Rtc • Ctc

1.0

–1.0

1.0

–1.0

1.0

–1.0

35

5.15

5.15

0.5

0.5

50

250

10

100

1.8

0.8

1.8

0.8

3.5

50

1.0

0.5

Vo1• 0.97

1.35 • Rtc • Ctc

1.13 • Rtc • Ctc

0.19 • Rtc • Ctc

3.0

200

1.0

3.5

300

1.0

3.0

200

1.0

V

V

V

A

V

W

°C

°C

°C

°C/W

°C/W

Reverse connection 1 min max.

With an infinite heatsink mounted.

With an infinite heatsink mounted.

External Dimensions (unit: mm)Features Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1)

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006

20

12.2±0.2

1.0

2.5±0

.27.

5±0.2

10.5±0.2

1.27±0.25

16

1 8

9

+0.1–0.05

0.4+0.15–0.05

0.25+0.15–0.05

2.0

+0.

2–

0.8

Notes: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18µm)

*1

*1

*2, 3

*4

Standard Connection Diagram

Timing Chart

Circuit Block Diagram

Vin1(3 Pin)

Vo1(4 Pin)

Vo2(7 Pin)

RESET(14 Pin)

W/D/C(11 Pin)

Vin2(6 Pin)

Vc(5 Pin)

GND(1,9,12,13 Pin)

EN(2 Pin)

TC(8 Pin)

CK(10 Pin)

ENTSD

Vc(Vo2: EN)

Drive1OCP1

Vo1RESETW/D

Drive2OCP2

Err.

Err.

DET

DET

Battery

Cin Vc

GND

D2

D1

Vin1

Vo2

Vo1

Co1

Load

Load Co2

Vin2EN

CK W/D/CTc

RESET Rtc

Ctc

SFP3006

3Pin 4Pin

14Pin

7Pin

8Pin11Pin10Pin

1,9,12,13Pin

2Pin

6Pin

5Pin

Vin1,Vin2(+B)

EN

Vo1(BACK UP power supply)

Vo2(Main power supply)

Vo

TC

CK

W/D/C

RESETtdly twd

twdpW/D OFF mode

ENthH

Vo1thH

ENthL

Vo1thL

* The regulator IC may be used only with Vo1 (single output power supply) by selecting NC (open) for 5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.

(Ta=25ºC)

Min. clock pulse time: 5µs (Duty 50%)

Thermal resistance (junction to case)

Thermal resistance (junction to ambient air)

Overcurrent protection starting current

Residual current at a short

EN output control current

CK terminal control current

W/D/C terminal control current

Notes:*2: Refer to Dropout Voltage.*3: Since PD(max) = (VIN– VO1) • IO1+ (VIN2– VO2) • IO2 + (VIN • Iq) = 22W, VIN(max), IO1(max) and IO2(max) may be limited depending on operating conditions.*4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits.*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151 °C (min.) and 165°C (typ). These values represent the design warranty.

Fin thickness

Cin: Capacitor (39µF) for oscillation preventionCO1: Output capacitor (39µF)CO2: Output capacitor (39µF) Tantalum capacitors are recommended particularly for low temperatures (tantalum capacitors of about 0.47µ F in parallel).D1, D2: Protection diodes. Required for protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).

Page 23: datashet automotriz

21

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006

Electrical Characteristics

0 2 4 6 8 100

4

2

6

-50 0 50 100 1500

8

4

20

16

12

0 2 4 6 8 100

6

4

2

0 5 10 15 20 25 30

4.95

5.00

4.90

5.10

5.05

100 125 150 175 2000

4

2

6

5.10

5.00

5.05

4.90

4.95

0 5 10 15 2520 30 0 0.1 0.2 0.3 0.44.90

5.10

5.00

5.05

4.95

0 0.05 0.10 0.15 0.204.90

5.10

5.00

5.05

4.95

0

0.2

0.4

0.6

0.20 0.4

0 0.2 0.4 0.6

2

0

6

4

0 0.2 0.60.4 0.80

6

4

2

VIN=6V 10V 14V 18V

VIN=6V 10V 14V 18V

IO1=5mA

Copper foil area(5.0•7.4mm, t=18µm)

IO1=0A 0.2A 0.4A

IO2=0A 0.2A 0.4A

IO1=0A 0.1A 0.2A

IO1=0A 0.2A 0.4A

VIN=6V 10V 14V 18V

Ta=150°C25°C

–40°C0

0.2

0.4

0.6

0.10 0.2

Ta=150°C25°C

–40°C

VIN=6V 10V 14V 18V

Infinite heatsink equivalent(Tc=25°C)

Rise Characteristics of Output Voltage (V02) Rise Characteristics of Output Voltage (V01) Line Regulation (V01)

Load Regulation (V01) Load Regulation (V02)

Overcurrent Protection Characteristics (V02)

Dropout Voltage (V02) Overcurrent Protection Characteristics (V01) Dropout Voltage (V01)

Line Regulation (V02)

Ta—PD Characteristics Thermal Protection Characteristics

Out

put

vo

ltag

e V

O2

(V)

Dro

po

ut v

olta

ge

V

dif1

(V)

Out

put

vo

ltag

e V

O1

(V)

Dro

po

ut v

olta

ge

V

dif2

(V)

Out

put

vo

ltag

e V

O2

(V)

Out

put

vo

ltag

e V

O1

(V)

Out

put

vo

ltag

e V

O1

(V)

Out

put

vo

ltag

e V

O1

(V)

Out

put

vo

ltag

e V

O2

(V)

Out

put

vo

ltag

e V

O1

(V)

Out

put

vo

ltag

e V

O2

(V)

Po

wer

dis

sip

atio

n P

D (W

)

Output current IO2 (A)

Input voltage VIN (V)Input voltage V IN (V)

Ambient temperature Ta (ºC)

Output current IO1 (A) Output current IO2 (A)

Output current IO1 (A)Output current IO1 (A)

Output current IO2 (A)

Input voltage VIN (V)

Input voltage VIN (V)

Operating temperature Ta (ºC)

Page 24: datashet automotriz

Features Output current of 3A (Ta = 25ºC, VIN = 8 to 18V) High efficiency of 82% (VIN = 14V, IO = 2A) Requires 5 external components only Built-in reference oscillator (60kHz) Phase internally corrected Output voltage internally corrected Built-in overcurrent and thermal protection circuits Built-in soft start circuit

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Recommended Operating Conditions

External Dimensions (unit: mm)

Standard Circuit Diagram

Parameter Symbolmin typ max

min typ max

Unit ConditionsRatings

(Ta=25ºC)

Input voltage

Output voltage

SWOUT terminal voltage

Power Dissipation

Output voltage

Load regulation

Line regulation

Discharge resistance

(VIN = 14V, IOUT = 2A, Tj = 25ºC unless otherwise specified)

Junction temperature

Storage temperature

Junction to case thermal resistance

Junction to ambient-air thermal resistance

VIN

IO

VSWOUT

VO

VIN = 8 to 18V

VSSL = 0.2V

VIN = 0V

4.80 5.00

82

50 60

5

3.1

5.20

100

V

50 mV

0.2

25

200

35

V

15 µA

mV VO LINE

VO LOAD

Efficiency

IO = 0.5 to 3A

%

Oscillation frequency 70 kHzfOSC

Quiescent circuit current IO = 0A10 mAIq

Overcurrent protection starting current

AIS

VSSL

I SSL

RDIS

PD1

PD2

Tj

Tstg

j-c

j-a

Low level voltage

Source current when low

Soft start terminal

V

A

With infinite heatsink

Stand-alone

V

W

W

ºC

ºC

ºC/W

ºC/W

35

3

–1

22

1.8

–40 to +150

–40 to +125

5.5

66.7

Notes: *1. Efficiency is calculated by the following equation:

*2. A dropping-type overcurrent protection circuit is built in the IC.*3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open when not using it since it is already pulled up in the IC.

a

b

1 2 3 4 5

10.0

3.2

0.5

4.0

7.9

16.9

0.95

0.85

P1.7 •4 =6.8

4.2±0.2

2.8±0.2

2.6 ±0.1

3.9

8.2 ±0.7

±0.7

0.45–0.1+0.2

–0.1+0.2

(2.0

)5.

0±0

.6(8

.0)

(17.

9)

(4.6

)

(4.3)

1. VIN2. SWOUT3. GND4. VS5. SS

a: Part No.b: Lot No.

(Forming No. 1101)

Parameter Symbol Unit ConditionsRatings

Input voltage

Output current

Operating temperature

VIN

IO

Top

V

A

Ta—PD characteristicsºC

8

0.5

–40

18

3

+85

22

Switching Type Regulator ICs SI-3201S

VO • IO

VIN • I IN = • 100 (%)

SS5 SS

C3C3

5SS5

SI-3201S SI-3201S SI-3201S

SI-3201SVIN

VIN

C1

C3

C2

C1: 1000µFC2: 1000µF

L1: 250µHD1: RK46 (Sanken)

VOSWOUT

SW TrL1

D1

VS

GND GND

GND

5

3

4

21

SS

++

a

ed

b

g

c

h

i

f

a: Internal power supplyb: Thermal protectionc: Reference oscillatord: Resete: Latch & driver

f : Comparatorg: Overcurrent protectionh: Error amplifier i : Reference voltage

Cautions:(1) A high-ripple current flows through C1 and C2. Use high-ripple

type 1000µF or higher capacitors with low internal resistance. Refer to the respective data books for more information on reliability and electrical characteristics of the capacitor.

(2) C3 is a capacitor used for soft start.(3) L1 should be a choke coil with a low core loss for switching

power supplies.(4) Use a Schottky barrier diode for D1 and make sure that the

reverse voltage applied to the 2nd terminal (SWOUT terminal) is within the maximum ratings (–1V). If you use a fast-recovery diode, the recovery voltage and the ON forward voltage may cause a reversed-bias voltage exceeding the maximum ratings to be applied to the 2nd terminal (SWOUT terminal). Applying a reversed-bias voltage exceeding the maximum rating to the 2nd terminal (SWOUT terminal) may damage the IC.

(5) The 4th terminal (VS) is an output voltage detection terminal. Since this terminal has a high impedance, connect it to the positive (+) terminal of C2 via the shortest possible route.

(6) Leave the 5th terminal (soft start terminal) open when not using it. It is pulled up internally.

(7) To ensure optimum operating environment, connect the high-frequency current line with minimum wiring length.

*1

*3

*2

±0.2

±0.2

±0.2

±0.2

±0.3

±0.15

±0.7±0.7

Page 25: datashet automotriz

= 10VV 18VIN =

7V =

04.85

0.5 1.0 1.5 2.0 2.5 3.0

4.90

4.95

5.00

5.05

5.10

5.15

4.85

4.90

4.95

5.00

5.05

5.10

0 5 10 15 20 25 30 35

I 0A = o1A = 2A = 3A =

040

50

60

70

80

90

0.5 1.0 1.5 2.0 2.5 3.0

= 10VV 18VIN =

7V =

00

6

5

4

3

2

1

2 4 6 8 10

I 0A=o1A2A3A

===

0

6

5

4

3

2

1

0 1.0 2.0 3.0 4.0 5.0

T 100, 25, 20ºCC = --+

00

6

5

4

3

2

1

1.0 2.0 3.0 4.0 5.0

V 18V=

IN

10V7V

=

=

–40 0 40 80 120 160

10

0

5

15

20

25

23

Output current IO (A)

Line Regulation

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)

Out

put

vo

ltag

e V

O (V

)

Input voltage VIN (V) Input voltage VIN (V)

Load Regulation Rise Characteristics

Overcurrent Protection Characteristics

Output current IO (A)

Out

put

vo

ltag

e V

O (V

)

Overcurrent Protection Temperature Characteristics Efficiency Curve

Output current IO (A)

Output current IO (A)

Operating temperature Ta (ºC)

Po

wer

Dis

sip

atio

n P

D (W

)

Ta—PD Characteristics

With silicone greaseHeatsink: aluminum

With infinite heatsink

Eff

icie

ncy

(%

)

Electrical Characteristics

Switching Type Regulator ICs SI-3201S

Page 26: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

DIAG output applied voltage

Voltage across power supply and drive terminal

Power dissipation

Input current

Operating power supply voltage

Quiescent circuit current

Open load detection resistor

Output transfer time

DIAG output transfer time

(VBopr=14V, Ta=25ºC unless otherwise specified)

Junction temperature

Operating temperature

Storage temperature

VB

VIN

VDIAG

VBopr

Lo output

VIN = 5V

VIN = 0V

VO = VBopr –1.9V

IO = 1A

IO = 1A

IO = 1A

IO = 1A

V

5 12

6.0

0.8

0

16

mA

1.0

100

mA

30

8 30

15

10

15

30

30

30

µA

µs

µs

µs

µs

Iq

Threshold input voltage 3.0 VVINth

IIN

IIN

Overcurrent protection starting current

1.6

1

AIS

Ropen

Leak current of DIAG output VDIAG = 5V100 µAIDGH

Saturation voltage of DIAG output IDIAG = 3mA0.3 VVDL

Saturation voltage of output transistor

IO 1.0A, VBopr = 6 to 16V0.5 VVCE (sat)

Output terminal sink current VO = 0V, VIN = 0V2.0 mAIO (off)

TON

TOFF

TPLH

TPHL

VB–D

PD

Tj

TOP

Tstg

Hi output

Lo output

V

V

Without heatsink, all circuits operating

V

V

W

ºC

ºC

ºC

–13 to +40

–0.3 to +7.0

Drive terminal applied voltage VD V–0.3 to VB

–0.3 to +7.0

DIAG output source current IDIAG mA 3

VB –0.4

Output current IO A1.5

2.6

–40 to +150

–40 to +100

–40 to +150

Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute (all terminals except, VB and GND, are open).

Equivalent Circuit Diagram

Standard Circuit Diagram

Diagnostic Function

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed Surface-mount full-mold package

VIN VO

H H

L L

Truth table

SDH04

PZD1

DIAG

5.1kΩ

GND

IN

Out

VCC

VB

Load

Note 1: A pull-down resistor (11 kΩ typ.) is connected to the IN terminal.VOUT turns "L" when a high impedance is connected to the IN terminal inseries.

GND

GND

GND

GND

VB

VIN

VOUT

IO

VDIAG

Normal Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU

TSDOVERVOLTAGE

OPENOPEN

SHORT

Is

3.0V

0.8V

DIAG DET.

DIAG DET.

GND

4,5,13

Drive

Drive

O.C.P

O.C.P

T.S.D

CONT.

11kΩ typ.

CONT.

11kΩ typ.

Pre. Reg.

IN2

DIAG2

7

6

IN12

3DIAG1

The MIC is bound by the dotted lines. 9,12,16VB

Out11,15

D114

8,10

11Out2

D2

[Abbreviations]Drive: Drive circuitCONT: ON/OFF circuitPre.Reg: Pre-regulator

DIAG.DET.: Diagnostic circuitO.C.P.: Overcurrent protectionT.S.D.: Thermal protection

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04

24

a: Part No.b: Lot No.

a

b

20.0max

2.540.89

8.0

6.3

0 to

0.15

3.0

0.25

9.8

1.0

19.56

6.8m

ax

0.75+0.15–0.05

+0.15–0.050.3

16

Pin 1 8

9

4.0m

ax

3.6

1.4

SMD-16A

*1. The base terminal (D terminal) is connected to the output transistor base. It is also connected to the control monolithic IC. Do not, therefore, apply an external voltage in operation.

*2. SDH04 have two or three terminals of the same function (VB,

Out1, Out2, GND). The terminals of the same function must be shorted at a pattern near the product.

*2

*2

*1

*2

*2

*1

±0.2

±0.25±0.15

±0.2

±0.2

±0.2

±0.2

±0.3

±0.3

±0.5

Page 27: datashet automotriz

0 10 20 300

Iq (

mA

)

VB (V)

10

20

4640

VIN = 0V

VIN = 5V

0 10 20 300

20

50

40

I B (

mA

)

VB (V)

30

10

4640

–40ºC

25ºC

125ºC

Ta =

VIN = 0V

VIN = 5V

0 10 20 300

40

100

80

I B (

mA

)

VB (V)

60

20

4640

0 1 20

0.5

1.5

VC

E (s

at)

(V)

IO (A)

1.0

3

125ºC

25ºC

Ta = –40ºC

–40ºC

25ºC

Ta= 125ºCVB= 16V

VB= 6V

0 1 20

15

VO

(V

)

IO (A)

10

5

20

43

0 1 20

15

VO

(V

)

VIN (V)

10

5

3

VB = 14V IO = 1A

–40ºC25ºC

14V

6V

VB = 18V

0 1 20

15

VO

(V

)

IO (A)

10

5

20

43

14V

6V

VB = 18V

0 1 20

15

VO

(V

)

IO (A)

10

5

20

43

14V

6V

VB= 18V

Ta = 125ºC

0 2 4 6 80

1.0

0.8

0.6

0.4

0.2

I IN (

mA

)

VIN (V)

10

–50 0 50 1000

1.0

0.5

I INL

(µA

)

Ta (ºC)

150

VB = 14V

VB = 14V VIN= 0V

–40ºC25ºCTa = 125ºC

VO shortedVO open

VIN = 0V

Ta = –40ºC25ºC

125ºC

25

–50 0 50 1000

0.2

VD

L (V

)

Ta (ºC)

0.1

0.3

150

VB = 14VIDIAG = 3mA

Quiescent Circuit Current (dual circuit) Circuit Current (single circuit) Circuit Current (dual circuit)

Overcurrent Protection Characteristics (Ta=–40ºC) Overcurrent Protection Characteristics (Ta=25ºC)

Input Terminal Source Current Threshold Characteristics of Input Voltage Overcurrent Protection Characteristics (Ta=125ºC)

Saturation Voltage of Output Transistor

Saturation Voltage of DIAG Output Input Terminal Sink Current

Electrical Characteristics

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04

Page 28: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

DIAG terminal voltage

Collector-emitter voltage

Power Dissipation

Input voltage

Input current

Operating power supply voltage

Quiescent circuit current

Thermal protection starting temperature

Minimum load inductance

Open load detection resistor

Output transfer time

DIAG output voltage

DIAG output transfer time

(Ta=25ºC unless otherwise specified)

Saturation voltage of output transistor

Junction temperature

Operating temperature

Storage temperature

VB

VIN

VDIAG

VBopr

VBopr = 14V, VIN = 0V

IO 1.0A, VBopr = 6 to 16V

IO 1.8A, VBopr = 6 to 16V

VBopr = 6 to 16V

VBopr = 6 to 16V

VIN = 5V

VIN = 0V

VBopr = 14V, VO = VBopr –1.5V

VBopr = 6 to 16V

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

VCC = 6V

VCC = 6V, IDD = 2mA

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

V

5 12

6.0 30

mA

0.5 V

1.0 V

VB V

0.8 V

1 mA

145

30

8 30

15 30

6

0.3

30

30

mA

125 ºC

µs

µs

V

V

µs

µs

Iq

Output leak current VCEO = 16V

2.0

–0.3

–0.1

2 mAIO, leak

VCE (sat)

VIH

VIL

IIH

IIL

TTSD

Overcurrent protection starting current

1.9 AIS

Ropen

TON

TOFF

4.5

1

VDH

VDL

TPLH

TPHL

mHL

VCE

PD1

PD2

Tj

TOP

Tstg

Output ON

Output OFF

Output ON

Output OFF

V

V

With infinite heatsink (Tc = 25ºC)

Stand-alone without heatsink (Tc = 25ºC)

V

V

W

W

ºC

ºC

ºC

40

–0.3 to VB

6

40

Output current IO A1.8

18

1.5

–40 to +125

–40 to +100

–40 to +125Standard Circuit Diagram

Diagnostic Function

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply TO220 equivalent full-mold package not require insulation mica

SI-5151SPZ

DIAG

5.1kΩ

GND

1

4

3

5

2VIN

VIN VO

H H

L L

VO

VCC

VB

Load

LS-TTL orCMOS

VIN

VO

DIAG

Normal NormalOpen load OverheatShorted load

Truth table

1. GND2. VIN3. VO4. DIAG5. VB

a: Part No.b: Lot No.

(Forming No. 1123)

VIN DIAG

Open load

Normal

Mode

Shorted load

Overheat

LH

VO

LH

LH

LH

HH

HH

LH

LL

LL

LH

LL

LL

DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute (all terminals except, VB and GND, are open).

26

High-side Power Switch ICs [With Diagnostic Function] SI-5151S

10

2.6

4.2

2.8

3.2

4

7.9

20m

ax3.

6

16.9

P1.7 • 4 = 6.8

0.94

4

0.85 0.45+0.2–0.1

+0.2–0.1

2.9

R-end

±0.5

±0.6

±0.1

±0.2

±0.2±0.2

±0.2

±0.15

±0.1

±0.2

±0.3

±0.2

+0.

2–0

.3

ab

Page 29: datashet automotriz

00

10

5

10 20 30 40

--40ºC

95ºC25ºC

Iq (m

A)

VB (V) VB (V)

00

10

10 20 30 40

20

30

T --40ºC=

T 25ºC=

T 95ºC=

40

50

I B (m

A)

00

1 2 3

0.5

1.0

95ºC

V =6 to 16VB

--40ºC

25ºC

VC

E (s

at) (

V)

IO (A)

00

1 2 3

16

10

14VV =B

2

4

6

8

12

14

VO

(V)

IO (A)

00

1 2 3

16

10

8

14VV =B12

14

4

2

6

IO (A)

VO

(V)

00

1 2 3

16

10

2

14VV =B

14

12

4

6

8

VO

(V)

IO (A)

00

1 2

10

20

15

5

2.2

95ºCTa =

25ºC –40ºC

16V=BV1A=OI

VIN (V)

VO

(V)

–400

0 50

0.5

1.0

100

Ta (ºC)

I IH (m

A)

14V=BV5V=INV

–40 0 50 100

Ta (ºC)

0

0.2

0.1

14V=BV

VD

G (s

at) (

V)

–400

0 50 100

Ta (ºC)

I IL (µ

A)

14V=BV0V=INV

1

2

0 50 100

Ta (ºC)

0150

10

16

2

4

6

8

12

14

2

4

6

DIA

G (V

)

1

3

5

VO

(V

)

Vo

DIAG

14V=BV10mA=OI

a

a

a

27

Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor

Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=100ºC)

Input Current (Output OFF) Input Current (Output ON) Threshold input voltage

Overcurrent Protection Characteristics (Ta= –40ºC)

Saturation Voltage of DIAG Output Thermal Protection Characteristics

Electrical Characteristics

High-side Power Switch ICs [With Diagnostic Function] SI-5151S

Page 30: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta = 25ºC)

Power supply voltage

Input terminal voltage

DIAG terminal voltage

Collector-emitter voltage

Power Dissipation

Input voltage

Input current

Operating power supply voltage

Quiescent circuit current

Thermal protection starting temperature

Open load detection resistor

Output transfer time

DIAG output leak current

Saturation voltage of DIAG output

DIAG output transfer time

(Ta=25ºC unless otherwise specified)

Saturation voltage of output transistor

Junction temperature

Operating temperature

Storage temperature

VB

VIN

VDIAG

VBopr

VBopr = 14V, VIN = 0V

IO 1.0A, VBopr = 6 to 16V

IO 1.8A, VBopr = 6 to 16V

VBopr = 6 to 16V

VBopr = 6 to 16V

VIN = 5V

VIN = 0V

VBopr = 14V, VO = VBopr –1.5V

VBopr = 6 to 16V

VBopr 6V

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

VCC = 6V, VBopr = 6 to 16V

VCC = 6V, VBopr= 6 to 16V, IDO = 2mA

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

V

5 12

6.0 30

mA

0.5 V

1.0 V

VB V

0.8 V

1 mA

30

8 30

15 30

100

0.3

30

30

mA

150 ºC

µs

µs

µA

V

µs

µs

Iq

Output leak current VCEO = 16V, VIN = 0V

2.0

–0.3

–0.1

2 mAIO, leak

VCE (sat)

VIH

VIL

IIH

IIL

TTSD

Overcurrent protection starting current

1.9 AIS

Ropen

TON

TOFF

IDIAG

VDL

Minimum load inductance mHL 1

TPLH

TPHL

VCE

PD1

PD2

Tj

TOP

Tstg

Output ON

Output OFF

Output ON

Output OFF

V

V

With infinite heatsink (Tc=25ºC)

Stand-alone without heatsink

V

V

W

W

ºC

ºC

ºC

40

–0.3 to VB

6

40

Output current IO A1.8

22

1.8

–40 to +150

–40 to +100

–40 to +150

Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute (all terminals except, VB and GND, are open).

Standard Circuit Diagram

Diagnostic Function

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed TO220 equivalent full-mold package not require insulation mica

SI-5152SPZ

DIAG

5.1kΩ

GND

1

4

3

5

2VIN

VIN VO

H H

L L

VO

VCC

VIN DIAG

VB

Load

LS-TTL orCMOS

VIN

VO

DIAG

Normal NormalOpen load OverheatShorted load

Truth table

Open load

Normal

Mode

Shorted load

Overheat

LH

VO

LH

LH

LH

HH

HH

LH

LL

LL

LH

LL

LL

DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

28

High-side Power Switch ICs [With Diagnostic Function] SI-5152S

1. GND2. VIN3. VO4. DIAG5. VB

a: Part No.b: Lot No.

(Forming No. 1123)

10

2.6

4.2

2.8

3.2

4

7.9

20m

ax3.

6

16.9

P1.7 • 4 = 6.8

0.94

4

0.85 0.45+0.2–0.1

+0.2–0.1

2.9

R-end

±0.5

±0.6

±0.1

±0.2

±0.2±0.2

±0.2

±0.15

±0.1

±0.2

±0.3

±0.2

+0.

2–0

.3

ab

Page 31: datashet automotriz

00

10

5

10 20 30 40

–40ºC

95ºC25ºC

I q (

mA

)

VB (V) VB (V)

00

10

10 20 30 40

20

30

Ta = –40ºC

40

50

I B (

mA

)

00

1 2 3

0.5

1.0

95ºC

VB = 6 to 16V

–40ºC

25ºC

VC

E (s

at) (

V)

IO (A)

00

1 2 3

16

10

14VV =B

2

4

6

8

12

14

VO

(V

)

IO (A)

00

1 2 3

16

10

8

14VV =B12

14

4

2

6

IO (A)

VO

(V

)

00

1 2 3

16

10

2

14VV =B

14

12

4

6

8

VO

(V

)

IO (A)

00

1 2

10

20

15

5

2.2

95ºCTa =

25ºC –40ºC

VB = 16VIO = 1A

VIN (V)

VO

(V

)

–400

0 50

0.5

1.0

100

Ta (ºC)

I IH (

mA

)

14V=BV5V=INV

–40 0 50 100

Ta (ºC)

0

0.2

0.1

14V=BV

VD

L (V

)

–400

0 50 100

Ta (ºC)

I IL (

µA)

14V=BV0V=INV

1

2

Ta = 25ºC

Ta = 95ºC

29

Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor

Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=100ºC)

Input Current (Output OFF) Input Current (Output ON) Threshold input voltage

Overcurrent Protection Characteristics (Ta = –40ºC)

Saturation Voltage of DIAG Output

Electrical Characteristics

High-side Power Switch ICs [With Diagnostic Function] SI-5152S

Page 32: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

DIAG terminal voltage

Collector-emitter voltage

Power Dissipation

Input voltage

Input current

Operating power supply voltage

Quiescent circuit current

Thermal protection starting temperature

Open load detection resistor

Output transfer time

DIAG output voltage

DIAG output transfer time

(Ta=25ºC unless otherwise specified)

Saturation voltage of output transistor

Junction temperature

Operating temperature

Storage temperature

VB

VIN

VDIAG

VBopr

VBopr = 14V, VIN = 0V

IO 2.05A, VBopr = 6 to 16V

VBopr = 6 to 16V

VBopr = 6 to 16V

VIN = 5V

VIN = 0V

VBopr = 14V, VO = VBopr –1.5V

VBopr = 6 to 16V

VBopr 6V

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

VCC = 6V, VBopr = 6 to 16V

VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

IC = 5mA

V

5 12

6.0 30

mA

0.47 V

VB V

0.8 V

1 mA

30

8 30

15 30

6

0.3

30

30

403428

1

mA

150

4.5

ºC

µs

µs

V

V

µs

µs

Iq

Output leak current VCEO = 16V, VIN = 0V

2.0

–0.3

–0.1

2 mAIO, leak

VCE (sat)

VIH

VIL

IIH

IIL

TTSD

Overcurrent protection starting current

2.05 AIS

Ropen

TON

TOFF

VDH

VDL

Minimum load inductance mHL

Surge clamp voltage VVZ

TPLH

TPHL

VCE

PD1

PD2

Tj

TOP

Tstg

Output ON

Output OFF

Output ON

Output OFF

V

V

With infinite heatsink (Tc=25ºC)

Stand-alone without heatsink

Refer to "Surge clamp voltage"in Electrical Characteristics

V

V

W

W

ºC

ºC

ºC

–13 to +40

–0.3 to VB

6

VB —VZ

Output current IO A2.04

22

1.8

–40 to +150

–40 to +100

–40 to +150

Note: *1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse).* The rule of protection against reverse connection of power supply is VB = –13V, one minute.* This driver is exclusively used for ON/OFF control.

Standard Circuit Diagram

Diagnostic Function

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica

SI-5153S

DIAG

5.1kΩ

GND

1

4

3

5

2VIN

VIN VO

H H

L L

VO

VCC

VIN DIAG

VB

Load

LS-TTL orCMOS

VIN

VO

DIAG

Normal NormalOpen load OverheatShorted load

Truth table

Open load

Normal

Mode

Shorted load

Overheat

LH

VO

LH

LH

LH

HH

HH

LH

LL

LL

LH

LL

LL

DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

30

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S

*1

1. GND2. VIN3. VO4. DIAG5. VB

a: Part No.b: Lot No.

(Forming No. 1123)

10

2.6

4.2

2.8

3.2

4

7.9

20m

ax3.

6

16.9

P1.7 • 4 = 6.8

0.94

4

0.85 0.45+0.2–0.1

+0.2–0.1

2.9

R-end

±0.5

±0.6

±0.1

±0.2

±0.2±0.2

±0.2

±0.15

±0.1

±0.2

±0.3

±0.2

+0.

2–0

.3

ab

Page 33: datashet automotriz

0 10 20 300

Iq (

mA

)

VB (V)

5

10

40

25ºC

150ºC

Ta=–40ºC

0 10 20 300

20

50

40

I B (

mA

)

VB (V)

30

10

40

–40ºC

25ºC

150ºC

Ta =

0 1 20

2

VC

E (s

at)

(V)

IO (A)

1

3

–40ºC

25ºCVB = 6 to 16V

Ta = 125ºC

0 1 20

15

VO

(V

)

IO (A)

10

5

20

5430 1 20

15

VO

(V

)

IO (A)

10

5

20

4 53 0 1 20

15

VO

(V

)

IO (A)

10

5

20

4 53

14V

8V

VB = 18V

14V

8V

18V

14V

8V

VB = 18V

0 1 20

20

VO

(V

)

VIN (th) (V)

15

10

5

Ta = 150ºC –40ºC25ºC

–50 0 50 1000

0.8

0.6

1.0

0.4

0.2

I IH (

mA

)

Ta (ºC)

150 –50 0 50 1000

5

4

3

2

1

I IL (

µA)

Ta (ºC)

150

–50 0 50 1000

2

1

I O le

ak (

mA

)

Ta (ºC)

150 –50 0 50 1000

0.5

0.4

0.3

0.2

0.1

VD

L (V

)

Ta (ºC)

150 0 50 1000

20

15

10

5

VO

(V

)

Ta (ºC)

200150

VO

VDIAG

VB = 16VIO = 1A

VB = 14VVIN = 5V

VB = 14VVIN = 0V

VB = 14VVDIAG = 5VIO = 10mA

VB = 14VIDIAG = 2mA

VB = 14V

31

Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor

Overcurrent Protection Characteristics (Ta =25ºC) Overcurrent Protection Characteristics (Ta=125ºC)

Input Current (Output OFF) Input Current (Output ON) Threshold Characteristics of Input Voltage

Overcurrent Protection Characteristics (Ta=–40ºC)

Saturation Voltage of DIAG Output Thermal Protection Characteristics Output Terminal Leak Current

Electrical Characteristics

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S

VB =

Page 34: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

DIAG terminal voltage

Collector-emitter voltage

Power Dissipation

Input voltage

Input current

Operating power supply voltage

Quiescent circuit current

Thermal protection starting temperature

Open load detection resistor

Output transfer time

DIAG output voltage

DIAG output transfer time

(Ta=25ºC unless otherwise specified)

Saturation voltage of output transistor

Junction temperature

Operating temperature

Storage temperature

VB

VIN

VDIAG

VBopr

VBopr = 14V, VIN = 0V

IO 1.0A, VBopr = 6 to 16V

VBopr = 6 to 16V

VBopr = 6 to 16V

VIN = 5V

VIN = 0V

VBopr = 14V, VO = VBopr –1.5V

VBopr = 6 to 16V

VBopr 6V

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

VCC = 6V, VBopr = 6 to 16V

VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

IC = 5mA

V

5 12

6.0 30

mA

0.3 V

IO 2.5A, VBopr = 6 to 16V0.72 V

VB V

0.8 V

1 mA

30

8 30

15 30

6

0.3

30

30

403428

1

mA

150

4.5

ºC

µs

µs

V

V

µs

µs

Iq

Output leak current VCEO = 16V, VIN = 0V

2.0

–0.3

–0.1

2 mAIO, leak

VCE (sat)

VIH

VIL

IIH

IIL

TTSD

Overcurrent protection starting current

2.6 AIS

Ropen

TON

TOFF

VDH

VDL

Minimum load inductance mHL

Surge clamp voltage VVZ

TPLH

TPHL

VCE

PD1

PD2

Tj

TOP

Tstg

Output ON

Output OFF

Output ON

Output OFF

V

V

With infinite heatsink (Tc=25ºC)

Stand-alone without heatsink

Refer to "Surge clamp voltage" in Electrical Characteristics

V

V

W

W

ºC

ºC

ºC

–13 to +40

–0.3 to VB

6

VB –VZ

Output current IO A2.5

22

1.8

–40 to +150

–40 to +100

–40 to +150

Note: *1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse).* The rule of protection against reverse connection of power supply is VB = –13V, one minute.* This driver is exclusively used for ON/OFF control.

Standard Circuit Diagram

Diagnostic Function

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica

VIN DIAG

VIN

VO

DIAG

Normal NormalOpen load OverheatShorted load

Open load

Normal

Mode

Shorted load

Overheat

LH

VO

LH

LH

LH

HH

HH

LH

LL

LL

LH

LL

LL

DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

SI-5154S

DIAG

5.1kΩ

GND

1

4

3

5

2VIN

VIN VO

H H

L L

VO

VCC

VB

Load

LS-TTL orCMOS

Truth table

32

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S

*1

1. GND2. VIN3. VO4. DIAG5. VB

a: Part No.b: Lot No.

(Forming No. 1123)

10

2.6

4.2

2.8

3.2

4

7.9

20m

ax3.

6

16.9

P1.7 • 4 = 6.8

0.94

4

0.85 0.45+0.2–0.1

+0.2–0.1

2.9

R-end

±0.5

±0.6

±0.1

±0.2

±0.2±0.2

±0.2

±0.15

±0.1

±0.2

±0.3

±0.2

+0.

2–0

.3

ab

Page 35: datashet automotriz

0 10 20 300

Iq (m

A)

VB (V)

5

10

40

25ºC150ºC

Ta= –40ºC

0 10 20 300

20

50

40

I B (m

A)

VB (V)

30

10

40

–40ºC

25ºC

150ºC

Ta =

0 1 20

2

VC

E (s

at) (

V)

IO (A)

1

3

25ºCVB = 6 to 16V

Ta = 125ºC

0 1 20

16

VO (

V)

IO (A)

12

8

4

20

0

16

12

8

4

20

0

16

12

8

4

20

5430 1 2

VO (

V)

IO (A)

543 0 1 2

VO (

V)

IO (A)

543

14V

8V

14V

8V

14V

8V

6V

0 1 20

20

VO (

V)

VIN (th) (V)

15

10

5

Ta = 125ºC –40ºC25ºC

–50 0 50 1000

0.8

0.6

1.0

0.4

0.2

I IH (m

A)

Ta (ºC)

150 –50 0 50 1000

5

4

3

2

1

I IL (µ

A)

Ta (ºC)

150

–50 0 50 1000

2

1

I O le

ak (m

A)

Ta (ºC)

150 –50 0 50 1000

0.5

0.4

0.3

0.2

0.1

VD

L (V

)

Ta (ºC)

150

–40ºC

VB = 18V

VB = 18V

6V 6V

VB = 18V

VB = 14VVIN = 0V

VB = 14VVIN = 5V

VB = 16VIO = 1A

VB = 14V VB = 14VIDIAG = 2mA

33

0 50 1000

20

15

10

5

VO (

V)

Ta (ºC)

200150

VO

VDIAG

VB = 14VVDIAG = 5VIO = 10mA

Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor

Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=125ºC)

Input Current (Output OFF) Input Current (Output ON) Threshold input voltage

Overcurrent Protection Characteristics (Ta= –40ºC)

Saturation Voltage of DIAG Output Thermal Protection Characteristics Output Terminal Leak Current

Electrical Characteristics

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S

Page 36: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

DIAG terminal voltage

Collector-emitter voltage

Power dissipation

Input voltage

Input current

Operating power supply voltage

Quiescent circuit current

Thermal protection starting temperature

Open load detection resistor

Output transfer time

DIAG output voltage

DIAG output transfer time

(Ta=25ºC unless otherwise specified)

Saturation voltage of output transistor

Junction temperature

Operating temperature

Storage temperature

VB

VIN

VDIAG

VBopr

VBopr = 14V, VIN = 0V

IO 1.0A, VBopr = 6 to 16V

IO 2.5A, VBopr = 6 to 16V

VBopr = 6 to 16V

VBopr = 6 to 16V

VIN = 5V

VIN = 0V

VBopr = 14V, VO = VBopr –1.5V

VBopr = 6 to 16V

VBopr 6V

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

VCC = 6V, VBopr = 6 to 16V

VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

V

5 12

6.0 30

mA

0.3 V

0.72 V

VB V

0.8 V

1 mA

30

8 30

15 30

6

0.3

30

30

mA

4.5

1

ºC

µs

µs

V

V

µs

µs

Iq

Output leak current VCEO = 16V, VIN = 0V

2.0

–0.3

–0.1

2 mAIO, leak

VCE (sat)

VIH

VIL

IIH

IIL

TTSD

Overcurrent protection starting current

2.6

150

AIS

Ropen

TON

TOFF

VDH

VDL

Minimum load inductance mHL

TPLH

TPHL

VCE

PD1

PD2

Tj

TOP

Tstg

Output ON

Output OFF

Output ON

Output OFF

V

V

With infinite heatsink (Tc=25ºC)

Stand-alone without heatsink

V

V

W

W

ºC

ºC

ºC

–13 to +40

–0.3 to VB

6

40

Output current IO A2.5

22

1.8

–40 to +150

–40 to +100

–40 to +150

Note: * The rule of protection against reverse connection of power supply is VB= –13V, one minute (all terminals except, VB and GND, are open).

Standard Circuit Diagram

Diagnostic Function

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed TO220 equivalent full-mold package not require insulation mica

VIN DIAG

VIN

VO

DIAG

Normal NormalOpen load OverheatShorted load

Open load

Normal

Mode

Shorted load

Overheat

LH

VO

LH

LH

LH

HH

HH

LH

LL

LL

LH

LL

LL

DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

SI-5155SPZ

DIAG

5.1kΩ

GND

1

4

3

5

2VIN

VIN VO

H H

L L

VO

VCC

VB

Load

LS-TTL orCMOS

Truth table

High-side Power Switch ICs [With Diagnostic Function] SI-5155S

34

1. GND2. VIN3. VO4. DIAG5. VB

a: Part No.b: Lot No.

(Forming No. 1123)

10

2.6

4.2

2.8

3.2

4

7.9

20m

ax3.

6

16.9

P1.7 • 4 = 6.8

0.94

4

0.85 0.45+0.2–0.1

+0.2–0.1

2.9

R-end

±0.5

±0.6

±0.1

±0.2

±0.2±0.2

±0.2

±0.15

±0.1

±0.2

±0.3

±0.2

+0.

2–0

.3

ab

Page 37: datashet automotriz

0 10 20 300

Iq (

mA

)

VB (V)

5

10

40

25ºC150ºC

Ta= –40ºC

0 10 20 300

20

50

40

I B (

mA

)

VB (V)

30

10

40

–40ºC

25ºC

150ºC

Ta =

0 1 20

2

VC

E (s

at)

(V)

IO (A)

1

3

25ºCVB = 6 to 16V

Ta = 125ºC

0 1 20

16

VO

(V

)

IO (A)

12

8

4

20

0

16

12

8

4

20

0

16

12

8

4

20

5430 1 2

VO

(V

)

IO (A)

543 0 1 2

VO

(V

)

IO (A)

543

14V

8V

14V

8V

14V

8V

6V

0 1 20

20

VO

(V

)

VIN (th) (V)

15

10

5

Ta = 125ºC –40ºC25ºC

–50 0 50 1000

0.8

0.6

1.0

0.4

0.2

I IH (

mA

)

Ta (ºC)

150 –50 0 50 1000

5

4

3

2

1

I IL (

µA)

Ta (ºC)

150

–50 0 50 1000

2

1

I O le

ak (

mA

)

Ta (ºC)

150 –50 0 50 1000

0.5

0.4

0.3

0.2

0.1

VD

L (V

)

Ta (ºC)

150

–40ºC

VB = 18V

VB = 18V

6V 6V

VB = 18V

VB = 14VVIN = 0V

VB = 14VVIN = 5V

VB = 16VIO = 1A

VB = 14V VB = 14VIDIAG = 2mA

35

0 50 1000

20

15

10

5

VO

(V

)

Ta (ºC)

200150

VO

VDIAG

VB = 14VVDIAG = 5VIO = 10mA

Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor

Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=125ºC)

Input Current (Output OFF) Input Current (Output ON) Threshold input voltage

Overcurrent Protection Characteristics (Ta= –40ºC)

Saturation Voltage of DIAG Output Thermal Protection Characteristics Output Terminal Leak Current

Electrical Characteristics

High-side Power Switch ICs [With Diagnostic Function] SI-5155S

Page 38: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Electrical Characteristics

Absolute Maximum Ratings

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

DIAG output applied voltage

Voltage across power supply and output terminal

Power Dissipation

Input voltage

Operating power supply voltage

Quiescent circuit current (per circuit)

Thermal protection starting temperature

Open load detection resistor

Output transfer time

DIAG output transfer time

(VBopr=14V, Tj= –40 to +150ºC unless otherwise specified)

Junction temperature

Operating temperature

Storage temperature

VB

VIN

VDIAG

VBopr

Lo output

Tj = 25ºC

VO = VBopr –1.5V

VBopr 6V

IO = 1A

IO = 1A

IO = 1A

IO = 1A

V

0.8

19.3

1.0

2.5

34

34

1.6

6.0 16

mA

1.5

V

30

100

30

100

60

V

ºC

µs

µs

µs

µs

Iq

Circuit current (per circuit) mAIB

0.8

3.7

Threshold input voltage 3.0 VVINth

VIN

VIN

TTSD

Overcurrent protection starting current

1.6

5.5

Minimum load inductance mHLo 1.0

Maximum ON duty %D(ON) 0

AIS

Ropen

Leak current of DIAG output VCC = 7V–100 µAIDGH

Saturation voltage of DIAG output IDGH = –2mA, VBopr = 6 to 16V0.4 VVDL

Saturation voltage of output transistor

IO 1.2A, VBopr = 6 to 16V0.2 VVCE (sat)

IO 1.5A, VBopr = 6 to 16VVVCE (sat)

Output terminal sink current Tj = 25ºC, VCEO = 14V 5 mAIO (off)

Surge clamp voltageTj = 25ºC, IC = 10mA39 V

VB–OIC = 5mA40 V

TON

TOFF

TPLH

TPHL

VB–O

PD

Tj

TOP

Tstg

Hi output

Lo output

Input currentVIN = 5V

VIN = 0V100

29

28

–1.0 mA

µA

IIN

IIN

Hi output

Lo output

V

V

Stand-alone without heatsink,all circuits operating

C = 200pF, R = 0Ω

V

V

W

ºC

ºC

ºC

–13 to +40

–0.3 to +7.0

Drive terminal applied voltage VD V–0.3 to VB

–0.3 to +7.0

DIAG output source current IDIAG mA –3

VB–34

Voltage across power supply and drive terminal

VB–D V–0.4

Output current IO A1.5

Output reverse current IO A–1.8

Electrostatic resistance ES/A V±250

4.8

–40 to +150

–40 to +115

–50 to +150

Note:* The Zener diode has an energy capability of 200 mJ (single pulse).* A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.

Equivalent Circuit Diagram

Standard Circuit Diagram

Diagnostic Function

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.2V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit Built-in independent overcurrent and thermal protection circuit in each circuit Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed

VIN

VO

VDIAG

Normal NormalOpen load OverheatShorted load

VIN

VB

OUT

D

FLTGND

MIC

a

c

f

b

d

g

e

SLA2501M

GND1 OUT1 OUT2 OUT3

FLT1

IN1

IN2

VB

VB

VCC

D1 D2 D3

IN3

FLT2

FLT3

GND2

5

7

12

6 11 2 10 15

1 3 9 14

4

8

13

a: Part No.b: Lot No.

31Ellipse 3.2 • 3.8

14 • P2.03 = (28.42)

24.44.8

1.7

2.45

0.65

3.2

12.9 16

9.9

6.4

0.551.15+0.2–0.1

+0.2–0.1

+0.2–0.1

31.3

1 2 3 15

ab

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

36

a: Pre-regulatorb: Overvoltage protection circuitc: Control circuitd: Driver circuit

e: Overcurrent protection circuitf: Diagnostic circuitg: Thermal protection circuit

±0.1

±0.2

±0.2

±0.15 ±0.2

±0.2

±0.2

±0.2

±0.5

±0.2

±0.1

±0.2

±0.15

Page 39: datashet automotriz

0 10 20 300

2

4

Iq (m

A)

VB (V)

3

1

5

40

=T –40ºCa=T 25ºCa

=T 125ºCa

=V 0VIN

0 10 20 300

I B (m

A)

VB (V)

=T –40ºCa

40

=T 25ºCa

=T 125ºCa

10

20

30

40=V 5VIN

0 1 2 30

IO (A)

3.5

1.0

0.5

VC

E (s

at) (

V)

=T –40ºCa

=T 25ºCa

=T 125ºCa

=VB 6 to 16V=T 150ºCa

=VIN 5V

0 1 20

IO (A)

20

10

3 4 5

=VB 14V

0 1 20

IO (A)

20

10

3 4

=VB 14V

VO

(V)

VO

(V)

0 1 20

VO

(V)

20

10

3 4

=VB 14V

IO (A)

0 1 20

VO

(V)

VIN (V)

=T 125ºCa

20

10

3 4

25ºC –40ºC

=VB 16V =I 1AOUT

0--50

1.0

I IH (m

A)

Ta (ºC)

=VB 14V

0.5

050 100 125

0V=VIN

0–50

20

I IL (µ

A)

Ta (ºC)

=VB 14V

10

050 100 125

0V=V IN

0–50

0.3

Ta (ºC)

=VB 14V

050 100 125

5V=VIN

0.2

0.1

VD

L (V

)

3 (mA)=IFLT

Ta (ºC)

=VB 16V

0100

10

FLT

V

(V

)

10mA=IO

VO

(V)

0 60

5

1020

160 180

O V

FLTV

0

IF (A)

0

1.4

1.0

VF (V

)

1 2 3 4

aT = 125ºC

--aT = 40ºC

aT = 25ºC

1.2

0.2

0.4

0.6

0.8

37

Quiescent Circuit Current (single circuit) Circuit Current (single circuit) Saturation Voltage of Output Transistor

Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=125ºC)

Input Current (Output OFF) Input Current (Output ON) Threshold Input Voltage

Overcurrent Protection Characteristics (Ta= –40ºC)

Output Reverse Current Thermal Protection Saturation Voltage of DIAG Output

Electrical Characteristics

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

Page 40: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

DIAG output applied voltage

Power Dissipation

Input current

Operating power supply voltage

Quiescent circuit current (per circuit)

Open load detection resistor

Output transfer time

DIAG output transfer time

(VBopr =14V, Ta=25ºC unless otherwise specified)

Junction temperature

Operating temperature

Storage temperature

VB

VIN

VDIAG

VBopr

VIN = 0V

VIN = 5V

VIN = 0V

VO = VBopr –1.9V

IO = 1A

IO = 1A

IO = 1A

IO = 1A

V

5 12

6.0

0.8

0

16

mA

1.0

100

mA

30

8 30

15

10

15

30

30

30

µA

µs

µs

µs

µs

Iq

Threshold input voltage 3.0 VVINth

IIN

IIN

Overcurrent protection starting current

1.6 AIS

Ropen

Leak current of DIAG output VDIAG = 5V100 µAIDGH

Saturation voltage of DIAG output IDIAG = 3mA0.3 VVDL

Saturation voltage of output transistor

IO 1.0A, VBopr = 6 to 16V0.5 VVCE (sat)

Output terminal sink current VO = 0V, VIN = 0V2.0 mAIO (off)

TON

TOFF

TPLH

TPHL

PD

Tj

TOP

Tstg

Hi output

Lo output

V

V

Stand-alone operation without heatsink; all circuits operating

V

W

ºC

ºC

ºC

–13 to +40

–0.3 to +7.0

–0.3 to +7.0

DIAG output source current IDIAG mA3

Output current IO A1.2

4.8

–40 to +150

–40 to +100

–50 to +150

Note: * The rule of protection against reverse connection of power supply is VB= –13V, one minute (all terminals except VB and GND should be open).

Equivalent Circuit Diagram

Standard Circuit Diagram

Diagnostic Function

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.5V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed

a: Part No.b: Lot No.

31Ellipse 3.2 • 3.8

14 • P2.03 = (28.42)

24.44.8

1.7

2.45

0.65

3.2

12.9 16

9.9

6.4

0.551.15+0.2–0.1

+0.2–0.1

+0.2–0.1

31.3

1 2 3 15

a

b

VIN VO

H H

L L

Truth table

SLA2502M

PZD1

DIAG

5.1kΩ

GND

IN

Out

VCC

VB

LoadGND

GND

GND

GND

VB

VIN

VOUT

IO

VDIAG

Normal Shorted load Open load Overvoltage Overheat

ERROR SIGNAL for CPU

TSDOVERVOLTAGE

OPENOPEN

SHORT

Is

3.0V

0.8V

NI2

NI1

VB

Out1

Out2

Pre. Reg.

Drive

Drive

T.S.D

2

3

8

1

7

6

5

4

DIAG1

DIAG2

GND1

DIAG DET

DIAG DET

The MIC is bound by the dotted lines.

11kΩ typ.CONT.

11kΩ typ.CONT.

O.C.P

O.C.P

NI4

NI3

Out3

Out4

Pre. Reg.

Drive

Drive

T.S.D

10

11

9

15

14

13

12

DIAG3

DIAG4

GND4

DIAG DET

DIAG DET

11kΩ typ.CONT.

11kΩ typ.CONT.

O.C.P

O.C.P

SLA2502M

[Abbreviations]Drive: Drive circuitCONT: ON/OFF circuitPre.Reg: Pre-regulator

DIAG.DET.: Diagnostic circuitO.C.P.: Overcurrent protectionT.S.D.: Thermal protection

High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M

38

Note 1: A pull-down resistor (11kΩ typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series.

Note 2: Grounds GND1 and GND2 are not wired internally. They must be shorted at a pattern near the product.

±0.2

±0.2±0.2±0

.2

±0.2

±0.5

±0.2±0.2

±0.2

±0.1

±0.1

±0.15

±0.15

Page 41: datashet automotriz

0 10 20 300

20

50 –40ºC

25ºC

125ºC

VIN = 0V

VIN = 0V

40

I B (

mA

)

VB (V)

30

10

60

4640

0 1 20

15

VO

(V

)

VIN (V)

10

5

20

3

–50 0 50 1000

0.2

VD

L (V

)

Ta (ºC)

0.1

0.3

150

0–50 100500

2

I IL (

µA)

Ta (ºC)

1

3

150

0 10 20 300

150

I B (

mA

)

VB (V)

100

50

200

4640 0 1 20

VC

E (s

at)

(V)

IO (A)

0.5

VB

Ta =

(VB = 14V)

Ta =

1.0

3

Ta =

25ºC

125ºC

–40ºCTa =

125ºC25ºC

–40ºC

VB = 14VVIN = 0V

210 5430

0.4

0.3

0.2

0.1

I IH (

mA

)

VIN (V)

0.5

6

VB =

0 1 20

15

VO

(V

)

IO (A)

10

5

20

43

18V

14V

6V

125ºC –40ºC

VB = 14V

–40ºCTa =

125ºC

VB = 14VIDIAG = 3mA

0 10 20 300

Iq (

mA

)

VB (V)

10

20

4640

VO shortedVO open

VIN = 0V

Ta = –40V25V

125V

39

Circuit Current (single circuit) Circuit Current (4 circuits) Saturation Voltage of Output Transistor

Input Current (Output Hi)

Input Current (Output OFF) Threshold Input Voltage Overcurrent Protection Characteristics (Ta=–40ºC)

Quiescent Circuit Current (dual circuit) Saturation Voltage of DIAG Output

25ºC

25ºC

Electrical Characteristics

0 50 150100

Thermal Protection Characteristics

0

VO

1 (V

)

Ta (ºC)

10

5

15

200 5 10 15

Open Load Detection Resistor

0

RO

PE

N (k

Ω)

VB (V)

10

5

15

205 10 2015

Output Terminal Leak Current (VO = 0V)

0.5

IOLE

AK (m

A)

VB (V)

1.1

1.0

0.9

0.8

0.7

0.6

25

TSDVB = 14VRL = 1.3kΩ

Ta =

Ta = –40ºC

25ºC

125ºC 125ºC

25ºC

–40ºC

High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M

Page 42: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

Input terminal current

DG terminal voltage

Input thresholdvoltage

Inpup current

Operating power supply voltage

Quiescent circuit current

Thermal shutdown operating temperature

Load open detection threshold voltage

DG leak current

Low level DG output voltage

Output transfer time

DG output transfer time

(VB=14V, Ta=25ºC unless otherwise specified)

Output ON resistance

Channel temperature

Operating temperature

Storage temperature

VB

VIN

IIN

VB (opr)

VIN=0V, VOUT=0V

IO=1A

IO=1A, Ta=80ºC

Ta= –40 to +105ºC

Ta= –40 to +105ºC

VIN=5V

VIN=0V

VOUT=VO–1.5V

VOUT=0V

RL=14Ω, VO= –5V

RL=14Ω, VO •10%

VDG=5.5V

IDG=1.6mA

V

50

2.0

1.8

70

1

5.5 35

mA

200 mΩ

300 mΩ

3.0 V

V

200

12

µA

165

5

3

4.5

70

3

140

35

0.15

70

45

90

20

0.5

140

120

µA

155

1.5

ºC

A

V

µs

µs

µA

V

µs

Iq

Output leak current VOUT=0V

1.4

1.0

100 µAIO, leak

RDS (ON)

VIHth

VILth

IIH

IIL

TTSD

Overcurrent protection starting current

Internal current limit

1.9 AIS

ILim

Vopen

TON

TOFF

VDGL

IDG

TPLH

TPHL µs

VDG

VDS

IO

PD

IF

Tch

TOP

Tstg

Output ON

Output OFF

Output ON

Output OFF

V

V

Ta=25ºC

mA

V

V

A

W

A

ºC

ºC

ºC

35

–0.3 to 7

5

–0.3 to 7

DG terminal current

Drain to source voltage

Output current

Power dissipation

Source to drain Di forward current

IDG mA 5

VB–45

1.8

2

0.8

150

–40 to +105

–40 to +150

Parameter UnitRatings

Recommended Operating Conditions (for one channel) Wave Form

Power supply voltage

VIH

VIL

IO

RIN

RDG

5.5

4

–0.3

10

10

16

5.5

0.9

1

20

20

V

V

V

A

Block Diagram (for one channel)

Standard Connection Diagram

Timing Chart

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits

VIN DG

Open load

Normal

Mode

Shorted load

Overheat

HL

VO

HL

HL

HL

HH

HH

HL

LL

LL

(Limiting)

HL

LL

LL

Note: *1. Transient time is showed Wave Form below.

40

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003

*1

*1

12.2±0.2

1.0

2.5±0

.27.

5±0

.2

10.5±0.2

1.27±0.25

16

1 8

9

+0.1–0.05

0.4+0.15–0.05

0.25+0.15–0.05

2.0

+0.

2–0

.8

Fin thickness

min max

IN

DG

VB

GND OUT

ThermalProtect

InputLogic

LavelShifting

DGLogic

Open/ShortSense

ChargePump

CurrentLimit

Clamp

Chopper

Bias

Vin 1(7V max)

Vin 2(7V max)

GND

DG2

DG15V

OUT1

OUT2

5V(10,11)

9

5

RINCPU

RIN

124

6

14

15,16

7,8

13

1

SPF5003VB

(2, 3)

VB

VIN ON VIN OFF VO open OCP TSDNormal Normal

Over-heat

Normal NormalNormal Shorted loadOpen load

High inpidance

Internal current limit

TSDON

TSDOFF

VIN

VOUT

IOUT

DG

* RIN and RDG are needed to protect CPU and SPF5003 in case of reverse connection of VB terminal.* Make VB of 1Pin and 9Pin short from the fin to be plated by solder.

RD

G

RD

G

TON

VIN

VOUT

VDG

VDG • 90%

VDG • 10%

VOUT • 10%

VOUT–5V

TOFF

TPLH TPHL

Output transfer time

DG output transfer time

Load

Load

Page 43: datashet automotriz

41

Page 44: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

Input terminal current

DG terminal voltage

Input voltage

Inpup current

Operating power supply voltage

Quiescent circuit current

Thermal shutdown operating temperature

Load open detection threshold voltage

DG leak current

Low level DG output voltage

Output transfer time

DG output transfer time

(VB=14V, Ta=25ºC unless otherwise specified)

Output ON resistance

Channel temperature

Operating temperature

Storage temperature

VB

VIN

IIN

VB (opr)

VIN=0V, VOUT=0V

IO=2A

IO=1A, Ta=80ºC

VIN=5V

VOUT=VO–1.5V

VOUT=0V

VDG=5.5V

IDG=1.6mA

V

50

2.0

1.8

70

1

5.5 35

mA

150 mΩ

250 mΩ

3.0 V

V

µA

165

10

165

3

60

0.15

70

45

20

155 ºC

A

V

µs

µs

µA

V

µs

Iq

Output leak current VOUT=0V

Ta= –40 to +105ºC

Ta= –40 to +105ºC1.0

µAIO, leak

RDS (ON)

VIH

VIL

IIH

TTSD

Overcurrent protection starting current

Internal current limit

2.6 AIS

ILim

Vopen

TON

TOFF

VDGL

IDG

TPLH

TPHL µs

VDG

VDS

IO

PD

IF

Tch

TOP

Tstg

Output ON

Output OFF

Output ON

V

V

Ta=25ºC

mA

V

V

A

W

A

ºC

ºC

ºC

35

–0.3 to 7

5

–0.3 to 7

DG terminal current

Drain to source voltage

Output current

Power dissipation

Source to drain Di forward current

IDG mA 5

VB–45

2.5

2.7

0.8

150

–40 to +105

–40 to +150

Parameter UnitRatings

Recommended Operating Conditions (for one channel)

Power supply voltage

VIH

VIL

IO

RIN

RDG

5.5

4

–0.3

10

10

16

5.5

0.9

1.15

20

20

V

V

V

A

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits

42

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5004

min max

Block Diagram (for one channel)

Standard Connection Diagram

Timing Chart

IN

DG

VB

GND OUT

ThermalProtect

InputLogic

LavelShifting

DGLogic

Open/ShortSense

ChargePump

CurrentLimit

Clamp

Chopper

Bias

Vin 1(7V max)

Vin 2(7V max) GND

DG2

DG15V

OUT1

OUT2

5V

(16,17,18)

13

23

CPU

921

24

12

14,15

2,3

11

1

SPF5004VB

(4,5,6)

1.0

10.5

±0.3

+0.1–0.05

0.25+0.15–0.05

2.0+

0.2

–0.8

Fin thickness

17.28±0.2

2.5±0

.2

7.5±0

.2

15.58±0.2

1.27±0.25

24

1 12

13

0.4+0.15–0.05

a

b

a: Part No.b: Lot No.

* Make VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin to be plated by solder.

RIN

RIN

RD

G

RD

G

Load

Load

VB

VIN ON VIN OFF VO open OCP TSDNormal Normal

Over-heat

Normal NormalNormal Shorted loadOpen load

High inpidance

Internal current limit

TSDON

TSDOFF

VIN

VOUT

IOUT

DG

VIN DG

Open load

Normal

Mode

Shorted load

Overheat

HL

VO

HL

HL

HL

HH

HH

HL

LL

LL

(Limiting)

HL

LL

LL

Page 45: datashet automotriz

43

Page 46: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

Input terminal current

DG terminal voltage

Input thresholdvoltage

Inpup current

Operating power supply voltage

Quiescent circuit current

Thermal shutdown operating temperature

Load open detection threshold voltage

DG leak current

Low level DG output voltage

Output transfer time

DG output transfer time

(VB=14V, Ta=25ºC unless otherwise specified)

Output ON resistance

Channel temperature

Operating temperature

Storage temperature

VB

VIN

IIN

VB (opr)

VIN=0V, VOUT=0V

IO=1A

IO=1A, Ta=80ºC

Ta= –40 to +105ºC

Ta= –40 to +105ºC

VIN=5V

VIN=0V

VOUT=VO–1.5V

VOUT=0V

RL=14Ω, VOUT=VB–5V

RL=14Ω, VB •10%

VDG=5.5V

IDG=1.6mA

V

50

2.0

1.8

70

1

5.5 35

mA

200 mΩ

350 mΩ

3.0 V

V

200

12

µA

165

5

3

4.5

70

3

140

35

0.15

70

45

90

20

0.5

140

120

µA

155

1.5

ºC

A

V

µs

µs

µA

V

µs

Iq

Output leak current VOUT=0V

1.4

1.0

100 µAIO, leak

RDS (ON)

VIHth

VILth

IIH

IIL

TTSD

Overcurrent protection starting current

Internal current limit

1.9 AIS

ILim

Vopen

TON

TOFF

VDGL

IDG

TPLH

TPHL µs

VDG

VDS

IO

PD

IF

Tch

TOP

Tstg

Output ON

Output OFF

Output ON

Output OFF

V

V

Ta=25ºC, all circuit operating

mA

V

V

A

W

A

ºC

ºC

ºC

35

–0.3 to 7

5

–0.3 to 7

DG terminal current

Drain to source voltage

Output current

Power dissipation

Source to drain Di forward current

IDG mA 5

VB–45

1.8

2.7

0.8

150

–40 to +105

–40 to +150

Parameter UnitRatings

Recommended Operating Conditions (for one channel)

Power supply voltage

VIH

VIL

IO

RIN

RDG

5.5

4

–0.3

10

10

16

5.5

0.9

1

20

20

V

V

V

A

External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 3ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits

44

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 3-circuits] SPF5007

min max

Block Diagram (for one channel)

Standard Connection Diagram

Timing Chart

IN

DG

VB

GND OUT

ThermalProtect

InputLogic

LavelShifting

DGLogic

Open/ShortSense

ChargePump

CurrentLimit

Clamp

Chopper

Bias

IN2 IN3IN1GND12

13 VB

1

7 17 183 8

5,6

10,11

20,21

45V

9

19

GND2 GND3

CPU

SPF5007

RDG

DG1

OUT1

OUT2

OUT3

DG2

DG3

RDG

RDG

RIN

RIN

RIN

* RIN and RDG are needed to protect CPU and SPF5007 in case of reverse connection of VB terminal.* Make VB of 1Pin and 13Pin short from the fin to be plated by solder.

1.0

10.5

±0.3

+0.1–0.05

0.25+0.15–0.05

2.0+

0.2

–0.8

Fin thickness

17.28±0.2

2.5±0

.2

7.5±0

.2

15.58±0.2

1.27±0.25

24

1 12

13

0.4+0.15–0.05

a

b

a: Part No.b: Lot No.

Load

Load

Load

VB

VIN ON VIN OFF VO open OCP TSDNormal Normal

Over-heat

Normal NormalNormal Shorted loadOpen load

High inpidance

Internal current limit

TSDON

TSDOFF

VIN

VOUT

IOUT

DG

VIN DG

Open load

Normal

Mode

Shorted load

Overheat

HL

VO

HL

HL

HL

HH

HH

HL

LL

LL

(Limiting)

HL

LL

LL

Page 47: datashet automotriz

45

Page 48: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage 1

Power supply voltage 2

Power supply voltage 3

Output terminal voltage

Input terminal voltage

Output current

Power dissipation

Storage temperature

Channel temperature

Min. operating power supply voltage

Operating power supply voltage 1

Operating power supply voltage 2

Quiescent circuit current 1

Quiescent circuit current 2

PWM terminal input voltage

PWM terminal input current

Hold terminal input voltage

Hold terminal input current

Output ON resistance

Current sensing resistance

Overcurrent protection starting current

Thermal shutdown operating temperature

Operation circuit for current monitor output

Current monitor output voltage

Current monitor output current

Output transfer time

Output rise time

Output fall time

Current monitor output hold time

Current monitor output delay time

Hold time after inputting hold

S/H settling time

VB

Vcc

VB

Vsense+

Vsense–

VOUT

VPWM

VHold

IOUT

PD

Tstg

Tch

VB min

VB

VCC

Iqvb

Iqvcc

VPWMH

VPWML

IPWMH

VHoldH

VHoldL

IHoldH

RDSon

Rsense

Is

Ttsd

Io

VSH

ISH

ton

toff

tr

tf

tsh

tshd

tshh

tstt

Minimum operation of OUT terminal.

Vcc = 5V, VPWM = 0V, One circuit equivalent

Vcc = 5V, VPWM = 0V

Vcc = 5V

Vcc = 5V, VPWM = 5V, Active H

Vcc = 5V

Vcc = 5V, VPWM = 5V, Active H

IOUT = 1A

IOUT = 1A, Ta = 125°C

IOUT = 1A

IOUT = 1A, Ta = 125°C

Io = 0A, Vcc = 5V

Io = 0.2A, Vcc = 5V

Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C

Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C

Io = 1A, Vcc = 5V, VSH = 0V

Io = 1A, Vcc = 5V, VSH = 5V

Io = 0.5A, Vcc = 5V

V

V

V

mA

mA

V

µA

V

µA

Ω

Ω

Ω

Ω

A

°C

A

V

V

V

V

mA

mA

µs

µs

µs

µs

µs

µs

µs

µs

µs

6

10

3.5

3.5

3.0

150

0.2

0.488

1.219

2.925

–6

500

14

5.0

70

70

0.500

1.250

3.000

16

7.2

0.2

1.5

110

1.5

110

0.14

0.21

0.21

0.25

1.2

0.2

0.512

1.281

3.075

5

15

15

100

50

650

1

2

70

80

V

V

V

V

V

V

A

W

°C

°C

VB terminal, t = 1 min

Depends on surface-mount board pattern

0 to 32

–0.5 to 7.0

0 to 40

–0.8 to 6

Vsense+±Io • Rsense

–2 to 32

–0.5 to 7.0

2.0

2.4 to 5.0

–40 to +150

150

External Dimensions (unit: mm)Features Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits

46

High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF, Ta = 125°C

*1

*2

*4

*3

*3

Io = 0.5A, Vcc = 5V,

C1 = 0.033µF

1

2

3

5

4 6

20

18

19

17

Vcc

70kΩCMOS Logic

S/H

OSCChargePump

TSD OCP

lamp

SFP5017

–+

Sense R

Sense MOS

Sense+

Sense–

OUT

VB

LGC

PWM

Hold

S/H

clamp

D

S

Ordinary operation (auto hold)

Ordinary operation (auto hold)

Ordinary operation (external hold)

Thermal protection

Overcurrent protection

VPWM

Vout

Icoil

VS/H

VHold

*1 *1 *2

500 to 650 500 to 650usec usec

Truth table

VPWM L H

VOUT L H

1.0

10.5

±0.3

+0.1–0.05

0.25+0.15–0.05

Fin thickness

14.74±0.2

2.5±0

.27.

5±0.2

2.0±0

.2

13.04±0.2

1.27±0.25

20

1 10

11

0.4+0.15–0.05

a

b

a) Part No.b) Lot No.

Block Diagram (for one channel)

Standard Connection Diagram

Timing Chart

VCCVB

1

SFP5017PWM

Hold

S/HC

C1

D2

D1

LG

OUT

Sense+

Sense–

17

19

18

20

1kΩ

5.10.01

4 6

5

3

2Controlling

microcomputerCPU

* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V)

µFkΩ

(VB=14V, Ta=25ºC unless otherwise specified) – One circuit equivalent

Current sensing voltage

Note:

*1: Accuracy warranty range for current monitor output

*2: Equivalent errors are not included in current monitor output accuracy.

*3: With built-in pull-down resistance (70kΩ typ)

*4: Self-excitation and oscillation type

*5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

*1

70kΩ

Page 49: datashet automotriz

47

Page 50: datashet automotriz

External Dimensions (unit: mm)Features Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits

48

High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018

12.2±0.2

1.0

2.5±0

.27.

5±0.2

10.5±0.2

1.27±0.25

16

1 8

9

+0.1–0.05

0.4+0.15–0.05

0.25+0.15–0.05

2.0

+0.

2–0

.8

Fin thickness

2

3

4

6

5 7

15

13

14

11

Vcc

CMOS Logic

S/H

OSC

TSD OCP

lamp

Sense MOS OUT

VB

LGC

PWM

Hold

S/H

clamp

D

S

Block Diagram (for one channel)

Standard Connection Diagram

Timing Chart

VCCVB

2

SFP5018PWM

Hold

S/HC

C1

D2

D1

LG

OUT

Sense+

Sense–

11

14

13

15

5.10.01

5 7

6

4

3

* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V)

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings (Ta=25ºC)

Power supply voltage 1

Power supply voltage 2

Power supply voltage 3

Output terminal voltage

Input terminal voltage

Output current

Power dissipation

Storage temperature

Channel temperature

VB

Vcc

VB

Vsense+

Vsense–

VOUT

VPWM

VHold

IOUT

PD

Tstg

Tch

V

V

V

V

V

V

A

W

°C

°C

VB terminal, t = 1 min

Depends on surface-mount board pattern

0 to 32

–0.5 to 7.0

0 to 40

–0.8 to 6

Vsense+±Io • Rsense

–2 to 32

–0.5 to 7.0

2.0

2.0

–40 to +150

150

Current sensing voltage

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

Min. operating power supply voltage

Operating power supply voltage 1

Operating power supply voltage 2

Quiescent circuit current 1

Quiescent circuit current 2

PWM terminal input voltage

PWM terminal input current

Hold terminal input voltage

Hold terminal input current

Output ON resistance

Current sensing resistance

Overcurrent protection starting current

Thermal shutdown operating temperature

Operation circuit for current monitor output

Current monitor output voltage

Current monitor output current

Output transfer time

Output rise time

Output fall time

Current monitor output hold time

Current monitor output delay time

Hold time after inputting hold

S/H settling time

VB min

VB

VCC

Iqvb

Iqvcc

VPWMH

VPWML

IPWMH

VHoldH

VHoldL

IHoldH

RDSon

Rsense

Is

Ttsd

Io

VSH

ISH

ton

toff

tr

tf

tsh

tshd

tshh

tstt

Minimum operation of OUT terminal.

Vcc = 5V, VPWM = 0V

Vcc = 5V, VPWM = 0V

Vcc = 5V

Vcc = 5V, VPWM = 5V, Active H

Vcc = 5V

Vcc = 5V, VPWM = 5V, Active H

IOUT = 1A

IOUT = 1A, Ta = 125°C

IOUT = 1A

IOUT = 1A, Ta = 125°C

Io = 0A, Vcc = 5V

Io = 0.2A, Vcc = 5V

Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C

Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C

Io = 1A, Vcc = 5V, VSH = 0V

Io = 1A, Vcc = 5V, VSH = 5V

Io = 0.5A, Vcc = 5V

V

V

V

mA

mA

V

µA

V

µA

Ω

Ω

Ω

Ω

A

°C

A

V

V

V

V

mA

mA

µs

µs

µs

µs

µs

µs

µs

µs

µs

6

10

3.5

3.5

3.0

150

0.2

0.488

1.219

2.925

–6

500

14

5.0

70

70

0.500

1.250

3.000

16

7.2

0.2

1.5

110

1.5

110

0.14

0.21

0.21

0.25

1.2

0.2

0.512

1.281

3.075

5

15

15

100

50

650

1

2

70

80

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF, Ta = 125°C

*1

*2

*4

*3

*3

Io = 0.5A, Vcc = 5V,

C1 = 0.033µF

(VB=14V, Ta=25ºC unless otherwise specified)

Note:

*1: Accuracy warranty range for current monitor output

*2: Equivalent errors are not included in current monitor output accuracy.

*3: With built-in pull-down resistance (70kΩ typ)

*4: Self-excitation and oscillation type

*5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

*1

Ordinary operation (auto hold)

Ordinary operation (auto hold)

Ordinary operation (external hold)

Thermal protection

Overcurrent protection

VPWM

Vout

Icoil

VS/H

VHold

*1 *1 *2

500 to 650 500 to 650usec usec

Truth table

VPWM L H

VOUT L H

1kΩ

Controllingmicrocomputer

CPU

µFkΩ

70kΩ

70kΩ

ChargePump

Sense R

–+

Sense+

Sense–

Page 51: datashet automotriz

49

Page 52: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Input terminal voltage

Power Dissipation

Input voltage

Power supply voltage

Quiescent circuit current

Overcurrent protection starting current

Forward voltage of output stage diode

Output transfer time

(VB=14V, Ta=25ºC unless otherwise specified)

Storage temperature

Channel temperature

Output avalanche capability

VB

VIN

VBopr

VIN = 0V (all inputs)

IO = 1A

RL = 14Ω, IO = 1A

RL = 14Ω, IO = 1A

RL = 14Ω, IO = 1A

RL = 14Ω, IO = 1A

V

5

0.4

0.5

0.6

0.7

50

7

5.5 25

mA

1.5

5.5 V

12

8

10

5

V

A

V

µs

µs

Iq

Operating circuit current VIN = 5V (all inputs) 8 12 mAICC

3.5

–0.5

VIN

VIN

IS

Thermal protection starting temperature

151 165

1.1

41

Output rise time µsTr

Output fall time µsTf

ºCTTSD

Overvoltage protection starting voltage

25 VVB (ovp)

VF

Output leak current VO = 37V

IF = 0.5A

10

1.6

40

µAIOH

Output clamp voltage IO = 1A55 VVOUT (clamp)

Output ON resistance

30

ΩRDS (ON)

VB = 5.5VΩ

TON

TOFF

PD

Tstg

Tch

EAV

Hi output

Lo output

Input currentVIN = 5V

VIN = 0V

50 µA

µA

IIN

IIN

Hi output

Lo output

V

V

W

ºC

ºC

mJ Single pulse

40

–0.5 to +7.5

Output terminal voltage VOUT V37

Output current IO A1.8

2

–40 to +150

150

50

Equivalent Circuit Diagram

Circuit Example

Timing Chart

External Dimensions (unit: mm)Features DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A

50

12.2

1.0

2.5

7.5

10.5

1.27

16

1 8

9

0.4+0.15–0.05

+0.1–0.05

+0.15–0.05

+0.

2–0

.8

0.25

2.0

Fin thickness

VB VOUT 1

VIN 1

VIN 2

VIN 3

VIN 4

VOUT 2

VOUT 3

VOUT 4

L-GND

P-GND

Reg. REF

OVP

TSD

250kΩ typ

Gate Protction

Gate Driver

OCP

Use L-GND and P-GND being connected.

VB

VOUT

VIN

OVP

Normal Overvoltage Overheat Overcurrent

* Self-excited frequency is used in the overcurrent protection.

VIN VO

H L

L H

Truth table

±0.2

±0.25

±0.2

±0.2

±0.2

VCC

VB4

6

12

14

IN1

OUT1 OUT3 OUT2 OUT4

IN2

IN3

IN4

L-GND P-GNDCONTROLUNIT 13 1,9

SPF5002A

2 10 7 15 5

Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.

*

Page 53: datashet automotriz

51

Quiescent Circuit Current

0 10 20 30 400

4

8

Iq (

mA

)

VB (V)

6

2

10

0

4

8

6

2

10

0

4

8

6

2

10

Circuit Current (single circuit)

0 10 20 30 40

Id (

mA

)

VB (V)

Threshold Input Voltage

0 1 2 30

5

10

VO (

V)

VIN (th) (V)

15

Overcurrent Protection Characteristics

0 1.0 2.00

VO

(V

)

IO (A)

10

5

15

Forward Voltage of Output Stage Diode

0 0.5 1.0 1.50

0.5

1.5

I F (

A)

VF (V)

1.0

Output ON Voltage

0 0.5 1.0 1.5 2.00

0.4

0.8

VD

S (O

N) (

V)

IO (A)

0.6

0.2

1.0

Circuit Current (4 circuits)

10 20 30 40

Id (

mA

)

VB (V)

Overvoltage Protection Starting Voltage

0 10 20 30 400

VO

(V

)

VB (V)

10

5

15

Ta = 120ºC

Ta = 25ºC

Ta = –40ºC

Ta = 125ºC

Ta = 25ºC

Ta = –40ºC

Ta = 25ºC

Ta = –40ºC

Ta = 125ºC

VO = 14VIO = 0.1A Ta = –40ºC

Ta = 125ºC

Ta = 25ºC

VB = 14V

Ta = 125ºCTa = 25ºC

Ta = –40ºC

VB =14V

Ta = 120ºC

Ta = 25ºC

Ta = –40ºC

IO = 0.1A

Ta = –40ºCTa = 25ºCTa = 125ºC

Electrical Characteristics

Ta = –40ºCTa = 25ºCTa = 125ºC

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A

Page 54: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings (Ta=25ºC)

Power supply voltage

Power Dissipation

Storage temperature

Channel temperature

Output avalanche capability

VB

PD

Tstg

Tch

EAV

V

W

ºC

ºC

mJ Single pulse

40

Input terminal voltage V( IN, SEL, B/U) V–0.5 to +6.5

Output terminal voltage (DC) VOUT V50

Output terminal voltage (pulse) VOUT VOutput clamping (max 70V)

Output current (DC) IOUT A±2.9

Output current (pulse) IOUT AOver current protection starting current

Diag output source current VDIAG V6.5

Diag output voltage IDIAG mA5

2.8

–40 to +150

150

80

Equivalent Circuit Diagram

Circuit Example

Timing Chart

External Dimensions (unit: mm)Features DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in over current and thermal protection circuit and diagnostic function to detect open load Built-in output status signals (over current, over heat and open load)

52

VB(7)

VINB/U(17)

VINSEL(5)

VIN1(6)

VIN2(8)

VIN3(18)

VIN4(20)

L-GND(19)

VOUT1(4)

VOUT2(9)

VDIAG1(3)

VOUTSENSE

VDIAG2(10)

P-GND1(1, 2)

P-GND2(11, 12)

VOUT3(16)

VDIAG3(15)

P-GND3(13, 14)

VOUT4(21)

VDIAG4(22)

P-GND4(23, 24)

RegRef

Gate Protection

Gate driver

TSD

OUT OCPLatch

Set

Reset

OSC

Monitor

VB

7

6

3

10

15

22

8

18

20

17

19 1, 2 11, 12 13, 14 23, 24

5

4 9 16 21

LG PG1 PG2 PG3 PG4

VIN1

VIN2VIN3

VIN4

VINB/U

VINSEL

OUT1 OUT2 OUT3 OUT4

DIAG1DIAG2

DIAG3

DIAG4

SPF5009

Main input signal 1VIN1

Main input signal 2VIN2

Backup input signalVINB/U

Input select signalVINSEL

Power supply voltageVB

Output voltage 1VOUT1

Output current 1IOUT1

DIAG output 1VDIAG1

DIAG output 2VDIAG2

Nomal Nomal

Main mode Backup mode

Output 1Overheat

Output 1Overheat

Output 1Over current

Output 1Open load

Output 1Over current

Output 1Open load

OCP OCP

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

Quiescent circuit current

Operating circuit current

Overcurrent protection starting current

Forward voltage of output stage diode

Output moniter threshold voltage

(VB =14V, Ta = 25ºC unless otherwise specified)

Iq VB=14V, VIN=0V

VB=14V, VO=1A

VB=14V

VB=14V, RL=14Ω, IO=1A

VB=14V, RL=14Ω, IO=1A

VB=14V, RL=14Ω, IO=1A

VB=14V, RL=14Ω, IO=1A

VB=14V, RL=14Ω, IO=1A

VB=14V, RL=14Ω, IO=1A

9

65

15

12

Power supply voltage VB (opr) V5.5 40

mA

200

1.5

V

12

8

10

5

V

V

V

V

µs

µs

Id

Input voltage(1 to 4, SEL, B/U)

Input current (single circuit)(1 to 4, SEL, B/U)

VB=14V, VIN=5V (all inputs)12

6.5

mA

VIN (H) 3.5

–0.5VIN (L)

IIN (H)

IS

Thermal shutdown operating temperature 151 165

60

Output rise time

Output fall time

Output transfer time

µsTr

µsTf

12DIAG output transfer time

t DON

8 µs

µs

t DOFF

ºCTTSD

3.0 A

DIAG output voltage6.4

VVDIAG (L)

VDIAG (H)

VthM

Output leak current

IF=1A

0.5

10DIAG output leak current µAIDH

IOH

VF

Output clamp voltage

Output ON resistance

VB=14V, IO=1A

VB=14V, VO=50V

70

50

1.5

2

6.5

VVOUT (clamp)

VB=14V, IO=1A 0.18 Ω

TON

TOFF

VB=14V, VIN=0V

VB=14V, VIN=5V

VB=14V

VB=14V, VDIAG=6.5V

VB=14V, IDIAG=5mA

VB=14V, VDIAG=6.5V

VB=14V

VB=14V

30 µA

µA

µA

IIN (L)

RDS (ON)

1.0

10.5

±0.3

+0.1–0.05

0.25+0.15–0.05

2.0+

0.2

–0.8

17.28±0.2

2.5

±0.2

7.5

±0.2

15.58±0.2

1.27±0.25

24

1 12

13

0.4+0.15–0.05

a

b

a: Part No.b: Lot No.

Fin thickness

Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development)

Page 55: datashet automotriz

53

Page 56: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage 1

Power supply voltage 2

Logic input voltage

Power Dissipation

Input voltage

Quiescent circuit current

Overcurrent protection operating current

Forward voltage of output stage diode

Output transfer time

(VB =14V, Ta =25ºC unless otherwise specified)

Storage temperature

Channel temperature

Output avalanche capability

VB

VIN

VCC (opr)

VB=14V, VIN=0V

VB=14V, VO=1A

VB=14V

VB=14V, RL=14Ω, IO=1A

V

4

50

6

4.5 5.5

Operating power supply voltage 1

Operating power supply voltage 2

VB (opr) V5.5 40

mA

1.5

5.5 V

12

8

10

5

V

A

V

µs

µs

Iq

Operating circuit current VB=14V, VIN=5V 8 12 mAId

3.5

–0.5

VIN

VIN

IS

Thermal shutdown operating temperature 151 165

0.2

8

6

A 5

0.195

45

Output rise time µsTr

Output fall time µsTf

0.205Output-diag voltage ratio ra (DIAG)

VB=14V, VCC=5V, VO=40V

VB=14V, VO=1 to 14V, Rdiag=500kΩ

4.85Diag output clamping voltage VVDIAG (clamp)

ºCTTSD

6 A

Overvoltage protection starting voltage 25 VVB (ovp)

VF

Output leak current

VB=14V, VCC=5V, VIN=0V, VO=40V, Ta=25ºC

VB=14V, VCC=5V, VIN=0V, VO=14V, Ta=25ºC

IF=1A

2.8

1.6

40

Overvoltage protection hysteresis voltage VVB (ovp•hys)

mA

IOH

900 µA

Output clamp voltage VB=14V, IO=1A55 VVOUT (clamp)

Output ON resistanceVB=14V, IO=1A, Ta=125ºC0.3

–30

ΩRDS (ON)

VB=14V, IO=1A, Ta=25ºC0.2 Ω

TON

TOFF

PD

Tstg

Tch

EAV

Hi output

Lo output

Input currentVB=14V, VIN=5V

VB=14V, IO 1A

VB=14V

VB=14V, Ta=–40ºC

VB=14V, Ta=25ºC

VB=14V, Ta=125ºC

50 µA

µA

IIN

IIN

Hi output

Lo output

V

V

W

ºC

ºC

mJ Single pulse

40

–0.5 to +7.5

Output voltage VO V40 (DC)

Output current IO ASelf Limited

VCC V7.5

Diag output voltage VDIAG V0 to VCC

2.8 to 5

–40 to +150

150

100

Equivalent Circuit Diagram

Circuit Example

Timing Chart

External Dimensions (unit: mm)Features

Output monitor circuit (DIAG) DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits

Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012

54

VIN VO

H L

L H

Truth table

VIN1VIN2

VCC1-2 VCC3-4 VOUT1 VOUT2 VOUT3 VOUT4VB

VCC

VIN3VIN4

L-GND

6

7 18 19 3 10 15 22

58

1720

1621

49

11,12 13,14 23,241, 2

P-GND1 P-GND2

Diag1Diag2Diag3Diag4

P-GND3 P-GND4

SPF5012Input signal

Diagoutput

VB(19)

VIN1(4)

VIN2(9)

VIN3(16)

VIN4(21)

L. GND(6)

VCC1-2(7)

VCC3-4(18)

Diag1(5)

Diag2(8)

Diag3(17)

Diag4(20)

VOUT1(3)

VOUT2(10)

VOUT3(15)

VOUT4(22)

P. GND1(1, 2)

P. GND2(11, 12)

P. GND3(13, 14)

P. GND4(23, 24)

Gate Protection

RegOVP

OCP

TSD

Ch1

Ch2

Ch3

Ch4

Gate driver

*1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics*2. Changes by the patern of mounted substrate

*1

*2

1.0

10.5

±0.3

+0.1–0.05

0.25+0.15–0.05

2.5

±0.2

17.28±0.2

7.5

±0.2

2±0

.2

15.58±0.2

1.27±0.25

24

1 12

13

0.4+0.15–0.05

a

b

a: Part No.b: Lot No.

Fin thickness

VB

VOUT

VIN

OVP

Normal Overvoltage Overheat Overcurrent

* Self-excited frequency is used in the overcurrent protection.

Short L-GND and P-GND in a pattern near the product.

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55

Page 58: datashet automotriz

OUTA OUTA

4 5

STBYP-GND L-GND L-GND

9 8 1

C

12

3

10

2

6 11 7N.C.

4.7kΩ

OUTB OUTB VS

DIAG

IA/A

IB/BZD: VS <35VC 100µF(Reference)

Stepper motor

SLA4708M CPU

ZD

5V

+

Standard Circuit Diagram

External Dimensions (unit: mm)

Stepper-motor Driver ICs SLA4708M

56

Features High output breakdown voltage of 50V Affluent output current of 1.5A Built-in overcurrent, overvoltage and thermal protection circuits Low standby current of 50µA

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Ta=25ºC)

Power supply voltage

Breakdown voltage

Input voltage

Input voltage ( IA/A, IB/B standby)

Input current

(VS=12V, Ta=25ºC)

Diagnostic output withstand voltage

Operating temperature

Storage temperature

Power Dissipation

VS

VO

VIN

VIL

VIN = 0.4V

2.4

50

0.8

50

V

–0.8 mA

VVIH

IIL

VIN = 2.4V

IO = 1A, Ta = 25ºC

µAIIH

Output saturation voltage1.3 VVO.STA

IO = 1.5A, Ta = 25ºC

VO = 16V

IDIAG = 5mA

VS = 12V

1.5

100

0.3

VVO.STA

Output leak current µAIO.LEAK

1.8Overcurrent detection AISD

27.5 Overvoltage detection VVSD

Saturation voltage of diagnostic output

VVDIAG.L

Standby current µAISTB

IDIAG

IDIAG. H

Top

Tstg

PD

V

V

Without heatsink

V

mA

V

ºC

ºC

W

35

50

–0.3 to +7

Output current

Diagnostic output sink current

IO, AVE A1.5

10

7

–40 to +85

–40 to +150

3.5 (Ta=25ºC)

1 2 3

11•P2.54±0.7=27.94±1.0

31.5 max

0.851.2±0.15

31.0±0.2

24.4±0.2

16.4±0.2

3.2±0.15

Ellipse 3.2±0.15 • 3.8

0.55 2.2±0.7

1.7±0.74.8±0.2

1.45±0.15

Pin 1 12

4 5 6 7 8 9 10 11 12

8.5

max

9.5

min

(10.

4)

Lead

pla

te th

ickn

ess

resi

ns 0

.8m

ax

9.9±0

.2

13.0

±0.2

16.0

±0.2

2.7

+0.2–0.1 +0.2

–0.1

a: Part No.b: Lot No.

a

b

Page 59: datashet automotriz

00

10 20 30

Power supply voltage VS (V)

20

10

0

200

At

stan

db

y IS

(µA

)

Po

wer

sup

ply

cur

rent

At

Co

nsta

nt I

S (m

A)

Constant (ST = 5V)

At standby (ST = 0V)

100

0 10 20 300

10

12

14

2

4

6

8

Out

put

vo

ltag

e V

O (V

)

Power supply voltage VS (V)

35

=T 25ºCaV 12Vcc=

Common for all phases

0 1.0 2.0 3.00

1.0

2.0

Sat

urat

ion

volta

ge

of

out

put

tra

nsis

tor

Vsa

t (V

)

Output current IO (A)

Ta =25ºC

Common for all phases

0.5

1.5

00

Out

put

vo

ltag

e V

O (V

)

Junction temperature Tj (ºC)

=V 5VST

10

Vcc (Vs) =12V

110 120 130 140 150 160

j2T j1T

14

12

2

4

6

8

57

Power Supply Current Characteristics Overvoltage Protection Characteristics Saturation Voltage of Output Transistor Characteristics

Thermal Protection Characteristics

Electrical Characteristics

Vcc (Vs) =16V

Stepper-motor Driver ICs SLA4708M

Page 60: datashet automotriz

Standard Circuit Diagram

External Dimensions (unit: mm)Features Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.) Built-in recovery diode Built-in standby function Built-in overcurrent and thermal protection circuits and low voltage input shutoff function Built-in overload and disconnection detection function

2-ph Stepper-motor Driver ICs SPF7211

58

1.0

10.5

±0.3

+0.1–0.05

0.25+0.15– 0.05

Fin thickness

2.5±0

.2

17.28±0.2

7.5±0

.2

2±0.2

15.58±0.2

1.27±0.25

24

1 12

13

0.4+0.15–0.05

a

b

Parameter Symbol Unit RemarksRatings

Absolute Maximum Ratings

Recommended Operation Range

Electrical CharacteristicsParameter Symbol min typ max Unit Conditions

Ratings

Main power supply voltageInput voltage

Output current

Flag terminal withstand voltageFlag terminal currentDetect voltage

Power dissipation

Junction temperatureOperating temperatureStorage temperature

Main power supply current Low voltage protection operation voltageUVLO hysteresis voltage

Output leak current

Output saturation voltage

Recovery diode forward voltage

Input voltageInput terminal

Hysteresis voltage

Ph terminal Input current

Ixx, Set terminals Input current

Detect voltage Oscillation frequencyPWM frequency

Ct terminal threshold voltage

Ct terminal current

Overcurrent detection voltage Open detection voltageFlag terminal leak currentFlag terminal saturation voltageFlag terminal current

Set terminal Pulse rate Pulse number

OCP operation

Open operation

I/O propagation time Thermal protection temperatureThermal protection hysteresisThermal alarm temperatureThermal alarm hysteresis

VBBVINIo

IoPeakVFlagIFlagVRs

PD

TjTopTstg

40–0.3 to 15

±0.8±1.0

73

–2 to 24.139

150–40 to 110–40 to 150

IBBIBBS

VUVLOVUVLOhysIoleakLIoleakH

VsatL

VsatH

VFLVFH

VFGOVILVIH

VIhysIILIIHIILIIH

VRs

FoscFPWMVctLVctH

IctsinkIctsouceVocpLVocpHVocpLVocpHVopen

IleakFlagVFlagLIFlagTpwTpws

FclockPulsetocp1tocp2tocp3

topen1topen2tonH1toffH1tonH2toffH2tonL1toffL1tonL2toffL2

Tj∆Tj

Talarm∆Talarm

In ordinary operation (no load)At sleep

VBB = 40V, Vo = 0VVBB = Vo = 40VIo = 0.5AIo = 0.8AIo = –0.5AIo = –0.8AIo = 0.5AIo = –0.5AIo = –0.5A

VIL = 0.8VVIH = 2.0VIx0 = High, Ix1 = HighIx0 = Low, Ix1 = HighIx0 = High, Ix1 = LowCt = 2200pF±20%Ct = 2200pF±20%

Out voltageOut voltageVBB = 5.5VVBB = 5.5VSence voltageVFlag = 7VIFlag = 1mA

In ordinary operationAt sleepCt = 2200pF

In ordinary operation; Ct = 2200pFAt switching the phaseWhen Ixx shifts from L to HIn ordinary operationWhen Ixx shifts from L to H

mAµAVV

µAµAVVVVVVVVVV

µAµAµAµAmVmVmVkHzkHz

VV

µAµAVVVV

mVµAV

mAµSµSHz—µSµSµSµSµSµSµSµSµSµSµSµSµS°C°C°C°C

0.5

0.5

7004507048240.51.5720–1203.0

VBB–2.0

–60

242565.0

10.010.05.05.01.51.5

2.00.5

2013020

3.5

–100

1.2

2.0

–5–5

–30

66042040

28.814.4

1.5VBB–2.5

1.0VBB–2.3

1010017

2.55.05.02.52.5

100100

100100150

120

50504.5

1000.50.81.21.51.21.3

0.8

55

50740480907236

4.2VBB–1.7

1.85VBB–1.5

100.53

31

10.020.020.010.010.0

140

VV

A

VmAV

W

°C°C°C

VIN VBB

Tw 1mSVFlag VBB

For Ta = 25°CFor Tc (Ttab) = 25°C

Note:

*1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency.

*2: Thermal protection and alarm temperatures are design values.

*1

Note: *1: With glass epoxy + copper foil board (size 5.0•7.4cm; t: glass epoxy = 1.6mm/copper foil = 18µm)

Parameter Symbol Unit RemarksRatings

Main power supply voltageInput voltageOutput currentFlag terminal withstand voltageFlag terminal currentDetect voltageOperating temperature

VBBVINIo

VFlagIFlagVRsTop

6 to 18–0.3 to 7.0

±0.50 to 7.00 to 1.0–1 to 1

–40 to 110

VVAV

mAV

°C

VIN VBBContinuousVFlag VBB

*1

*2

µPC(ECU)

Rs

Rs

Ct2200pF

+VBB = 6 to 18V

SPM

I20

I21

Ph2

FL1

GN

D

GN

D

GN

D

GN

D

Out

2A Rs2

FL2

Out

2B

I10

I11

Ph1

Ct

Set

GN

D

GN

D

GN

D

Out

1A

Rs1

VB

B

Out

1B

1 121324

Rs 1Ω typ (1 to 2W)IoM VRs/Rs

Excitation Signal Time Chart2-phase excitation

1 to 2-phase excitation

Clock 0 1 2 3 0 1 Ph1 L H H L L HI10, I11 H H H H H H Ph2 L L H H L LI20, I21 H H H H H H

Clock 0 1 2 3 4 5 6 7 0 1 2 3 Ph1 L H H H H L L L L H H HI10, I11 H L H H H L H H H L H H Ph2 L L L H H H H L L L L HI20, I21 H H H L H H H L H H H L

* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph excitation (Ixx turns from high to low). The OPEN detection function is invalid except in this sequence.

Flag response time

Response pulse width

a) Part No.b) Lot No.

Page 61: datashet automotriz

59

Electrical Characteristics

2-ph Stepper-motor Driver ICs SPF7211

–30 –10 10 5030 9070 110 130 150 –30 –10 10 5030 9070 110 130 1500

Sat

urat

ion

volta

ge

Vsa

t (V

)

Junction temperature (ºC)

–30 –10 10 5030 9070 110 130 150

Junction temperature (ºC)

0.8

0.6

0.4

0.2

1.2

1

0 25 50 75 100 125 1500

Po

wer

dis

sip

atio

n P

D (W

)

Ambient temperature Ta (ºC)

20

10

40

30

0.5

Fo

rwar

d v

olta

ge

VF (V

)

Junction temperature (ºC)

1.7

1.5

1.3

1.1

0.9

0.7

55

49

53

51

45

47

Osc

illat

ion

freq

uenc

y F

OS

C (k

Hz)

Copper foil area(5.0•7.4mm, t=18µm) j-a 30.5°C/W

Infinite heatsink equivalent (Tc=25°C) j-tab 3.2°C/W

VsatH VFGO

VFH

VFL

VsatL

FOSC

Ct=2200pF

Vsat Temperature Characteristics (Io=0.5A) Diode VF Characteristics (IF=0.5A)

Ta-PD Characteristics OSC Temperature Characteristics

Page 62: datashet automotriz

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Electrical CharacteristicsParameter Symbol

min typ maxUnit Conditions

Ratings

(Ta=25ºC)

Motor supply voltage

Input terminal voltage

PWM control frequency

Forward • reverse rotation switch frequency

Power dissipation

Input terminal voltage

Input terminal current

Motor supply voltage

Output saturation voltage

Static circuit current

DIAG output pulse width

DIAG terminal voltage

(Unless, otherwise specified, Tj=Tch=25°C, VM=14V, IO=3A)

Output leakage current

Junction and channel temperature

Operating temperature

Storage temperature

VM

IN1

IN2

PWM

fPWM

VIN

IO=3A

VM=40V

VM=40V

VIN1=VIN2=VPWM

Brake mode

VIN1=VIN2=VPWM

VIN1=VIN2=VPWM=0V

VIN1=VIN2=VPWM=5V

IO=10A

IO=3A

IO=10A

IO=3A

VPWM: H L (Vth=2.5V typ)

Stop mode

Forward and reverse mode

C=1µF (typ)

ID•SINK=1mA

V

0.3

6 18

V

100 µA

100 µA

V

2.0 V

200

µA

22

1.0

0.8

1.0

0.8

22

16

0.3

µA

V

mA

mA

mA

ms

V

V, VO-PG

IO=3A

VM=24V (2 min.)

0.8 V

Output transmission time

Forward voltage characteristic of diode between drain and source

VPWM: L H (Vth=2.5V typ)

3.0

–100

10

15

10

µs

µs

µs

V

V

V

tpLH

tpHL

tpHL-tpLH

VF•L

VF•H

IL, L

V, VM-VO

IL, H

VIN, H

VIN, L

IIN, L

IIN, H

OPC start current 16

20

AIOCP

IM1

IM2

IM3

tDIAG

VD•L

fCW

PD1

PD2

Tj, Tch

TOP

Tstg

V

V

V

V

Without heatsink

With infinite heatsink

Duty=20% to 80%

PW 1ms, Duty 50%

kHz

Hz

W

W

ºC

ºC

ºC

40

–0.3 to 7

–0.3 to 7

–0.3 to 7

20

500

Output currentIO

IO (p-p)

A

A

±5

±17

3.6

33.7

–40 to +150

–40 to +85

–40 to +150

Thermal resistance j-c ºC/W 3.7

j-a ºC/W 35

Standard Connection Diagram

Equivalent Circuit

Timing Chart

External Dimensions (unit: mm)Features P-ch MOS for high side and N-ch MOS for low side in one package Enable to drive DC±5V Possible to drive a motor at the LS-TTL, C-MOS Logic level Guarantee Tj=Tch=150°C Built-in over current protection and thermal shut down circuits Built-in diagnosis function to monitor and signal the state of each protection circuits Built-in vertical current prevention circuits (Dead time is defined internally.) No insulator required for Sanken's original package (SPM package)

60

Full Bridge PWM Control DC Motor Driver ICs SI-5300

*

*2

*3

*1

*4

Note: *1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H 0V: L) is input to the terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25ºC, fPWM=10kHz, VM=14V) are assumed to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2). It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.

Output transmission time tpHL is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.1) of the output terminal.

Output transmission time tpLH is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.9) of the output terminal.

a: Part No.b: Lot No.

0.75+0.2–0.1

16.1

±0.2

a

b

(28.4)

(4.5

)

14• P2.03±0.1=(28.42)

35±0.3

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

0.45+0.2–0.1

7.6±0

.5

3.6±0

.5(4

)

4.8±0.2

2.7±0.2

2±0.5

4.5±0.7

(R0.8)

(R0.8)

R-end

Protection circuit

VM=2V VM=2V

VM

VM-OUT1(Pch1 VDS)

VOUT1-GND(Nch1 VDS)VOUT2-GND(Nch2 VDS)

OUT1

OUT2

TDIAG

DIAG 20ms(min)DIAG Threminal

VCC=5V Pull-up

IOUT (A)

VM-OUT2(Pch2 VDS)

IN1

IN2

PWM

Return to constant action

Therminal name

IN1

IN2

PWM

OUT1

GND

OUT2

IOUT (A)

Forward Duty ON

Forward Duty OFF

Reverse Duty ON

Reverse Duty OFF

Stop(Free Run)

Stop(Free Run)

High inpidance

High inpidance

High inpidance

M

VM VM

OUT1

OUT2

VM

IN1

IN2

PGND PGND

LGND

DIAG

TDIAG

CDIAG1µF

ECU insideVCC

PULL-UPResistor

PWM

Pre-Rec

TSDB

B

B B

B

Pch1 Pch2

Nch1 Nch2

B

A

AA

A

A

A

FF

Q SR

DeadTime

DeadTime

PWMdownedgesense

OCP OCP

DIAGCONTROL

OCP OCP

SI-5300

14, 15OUT2

1, 2OUT1

3, 5, 13VM

Relay

Battery

Capacitor220µF

CPU

6 IN1

11 IN2

7 PWM

10 DIAG

9TDIAG

VCC 8LGND

4,12PGND

Delay Capacitor 1µF

+

Pull-up Resistor10kΩ(Open Collector)

M

GND

Vth

VPWM (5V)

VOUT

VOUT*0.9

GNDtpLH

PWM terminal

OUT terminal

Vth

VPWM (5V)

VOUT *0.1

GND

GNDtpHL

PWM terminal

OUT terminal

*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.

*3: Output transmission time (tpHL)*2: Output transmission time (tpLH)

Breake Breake

Note: * The dead time for the length current prevention in positive and the reversing switch is set by internal control IC. The set point in internal IC at the dead time is 20µs (typical). Please take into account the dead time and consider the load conditions when you use the IC.

Page 63: datashet automotriz

Duty on

Output saturation voltage (Pch)

Quiescent circuit current

Output saturation voltage (Nch)

Voltage of input terminal (Threshold voltage)

VTDIAG – VDIAG Characteristics

Forward voltage of Diode between drain and source

Current of input terminal (SINK current)

Thermal shut down protection Current of input terminal (Source current)

00

1 2 3 4 5 6 7

V•

VM

-VO

(V)

1.0

0.8

0.6

0.4

0.2

0 10 20 4030

I M (m

A)

VM (V)

00

–2

–4

–6

–8

–10

–12

10 20 4030

I IN1,

I IN

2, P

WM

sou

rce

(µA

)

VM (V)

00

1

2

3

4

5

6

1 2 3 4 5 6

VD

IAG

(V)

VTDIAG (V)

100 125 150 175 200

1

2

3

4

5

6

0

VD

IAG

(V)

Ta (ºC)

IO (A)

0

0 1 2 3 4 5 6 7

0 1 2 3 4 5 6 7

4

8

12

16

VIN1, IN2, PWM (V)

00

1 2 3 4

0.1

0.2

0.3

0.4

0.5

0.6

5 6 7

I SIN

K (m

A)

VIN1, IN2, PWM (V)

00

0.2 0.4 0.6 0.8 1.0 1.2

2

4

6

8

12

10

I FS

D (A

)

VFSD (V)

0

0.1

0.2

0.3

0.4

0.5

IO (A)

V•

VO

-PG

(V)

VO

(V)

VM=14V

Ta=25ºCVM=14VVM=14V

Ta=150ºC

Ta=85ºC

Ta=25ºC

Ta=–40ºC

Ta=150ºC

Ta=85ºC

Ta=25ºC

Ta=–40ºC

Ta=150ºC

Ta=85ºC

Ta=25ºC

Ta=–40ºC

NchMOS FET

PchMOS FET

VM=14V

Ta=150ºC

Ta=25ºC

Ta=–40ºC

Ta=150ºC

Ta=25ºC

Ta=–40ºCTa=150ºCTa=25ºCTa=–40ºC

IIN1=IIN2=PWM=0V VM=10V IO=0A

VM=14V

Electrical Characteristics

61

Pull-up resistance =3kΩ

0

5

10

15

20

25

IO=0ATa=25ºC

Brake

Duty off

Stop

Full Bridge PWM Control DC Motor Driver ICs SI-5300

Pch MOS FET Safe Operating Area (SOA) Nch MOS FET Safe Operating Area (SOA)

2 10 40 1000.3

1

10

100

0.3

1

10

100

I OU

T (

A)

I OU

T (

A)

VM-OUT (V)

2 10 40 100

VOUT -PG (V)

PD—Ta Characteristics

–40 –30 0 25 50 75 1000

5

10

15

20

25

30

35

40

Allo

wab

le P

ow

er D

issi

pat

ion

PD

(W)

Ambient temperature Ta (ºC)

Tc=25ºCInfinite heatsink (Tc =25ºC)

No heatsink

1ms

10ms

100ms

Tc=25ºC

1ms

10ms

100ms

Page 64: datashet automotriz

Standard Circuit Diagram

External Dimensions (unit: mm)Features A DMOS of low ON resistance (0.1Ω typ) is mounted on the high and low side power elements Two input signals control the forward/reverse/brake of a DC motor Current limit and overcurrent protection circuits Low voltage and thermal protection, excess input detecting output and input terminal open protection

Full Bridge DC Motor Driver ICs SPF7301(under development)

62

Parameter Symbol Unit RemarksRatings

Absolute Maximum Ratings

Recommended Operation Range

Electrical CharacteristicsParameter Symbol min typ max Unit Conditions

Ratings

Main power supply voltageInput terminal input voltageEN terminal voltage Disable terminal input voltage

Output current

DIAG output currentDIAG inflow current

Power dissipation

Junction temperatureOperating temperatureStorage temperature

Main power supply current

UVLO hysteresis voltage

Output terminal leak current

Output DMOS RDS (ON)

OPC start current

DI terminal voltage

DI terminal current

EN terminal input voltage

EN terminal input current

DIAG terminal output voltageDIAG terminal output currentDIAG terminal leak current

Input delay time

Overvoltage protection operation voltageOVP hysteresis widthThermal protection starting temperatureThermal protection hysteresis width

VB

VIN1,VIN2VEN

VDI

IoIoPeakVDIAG

IDIAG

PD1PD2Tj

TopTstg

j-c

j-a

–0.3 to 36–0.3 to 6

–0.3 to 12–0.3 to 6

±7±15

–0.3 to 6–3394

–40 to 150–40 to 105–40 to 150

3.2

31

IBB1IBB2

VuvloHVuvloL∆UVLOIleakHSIleakLS

RDS(ON)_1HRDS(ON)_2HRDS(ON)_1LRDS(ON)_2L

VF_H1VF_H2VF_L1VF_L2

Iocp1_H1Iocp1_H2Iocp1_L1Iocp1_L2Iocp2_H1Iocp2_H2Iocp2_L1Iocp2_L2

VINxHVINxLIINxHIINxLVDIxHVDIxLIDIxHIDIxLVENthIENHIENL

VDIAG

IDIAG

IDIAGLTdON

TdOFF

TrTf

TddisVOVP

∆VOVP

Ttsd_ON∆Ttsd

For VEN = 0V

Io1 = 1AIo2 = 1AIo1 = –1AIo2 = –1A

VDI = 5VVDI = 0V

VDI = 5VVDI = 0V

VEN = 5VVEN = 0VIDIAG = 0.5mAFor VDIAG = 1.6V

Time from VINxH to Voutx•0.2Time from VINxL to Voutx•0.8Time of Voutx from 20% to 80%Time of Voutx from 80% to 20%Time from DIthH to Voutx•0.2

mAµAVVV

µAµAmΩmΩmΩmΩVVVVAAAAAAAAVV

µAµAVV

µAµAV

µAµAV

mAµAµSµSµSµSµSVV

°C°C

15

0.5

1001001001001.51.51.51.57777

15151515

405

16515

5.04.5

–100

4.54.54.54.5

2

–100–100

2

–100–1000.8

–10

1.5–10

35

151

1007.06.5

100200200200200

10101010

0.8

0.8

4100100.8

152015664

45

VVVVAAV

mAWW°C°C°C

°C/W

°C/W

1kHz, Duty 1%, Pulse 10µS

DIAG terminal sink currentWith an infinite heatsink mounted*1

Note: *1: With glass epoxy + copper foil board (size 5.0•7.4cm; t: glass epoxy = 1.6mm/copper foil = 18µm)

Note:

*2: For the electrical characteristics for Tj = –40 to 150°C, the design warranty applies to the above specification values.

*3: Thermal protection starting temperature is 165°C (typ) by design. The above parameters are the design specifications.

Parameter Symbol Unit RemarksRatings

Main power supply voltageDI terminal input voltageInput terminal input voltageOutput currentDIAG terminal voltageOperating temperature

VB

VDI

VINx

IoVDIAG

Top

8 to 18–0.3 to 5.3–0.3 to 5.3

±1–0.3 to 5.3–40 to 105

VVVAV

°C

*2

*3

*3

(Ta=25ºC)

(Tj = 30 to 125°C, VB = 14V, EN = DI = 5V, Ccp = 33nF, RDIAG = 20kΩ unless otherwise specified)

VB

Full Brige Driver ICIN1

IN2

R1Cin

Power supply

R2RDI

PGND LGND

OUT2

OUT1

DI

DIAGRDIAG

M

Ccp

VccEN CP

SFP7301

* Recommended connection parts Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF DIAG terminal pull-up resistance RDIAG: 20kΩ Input terminal pull-down resistance R1, R2, RDI: 10kΩ

10.5

±0.3

1.0+0.1–0.05

Fin thickness

14.74±0.2

13.04±0.2

1.27±0.25 0.4

20 11

1 10+0.15–0.05 0.25

+0.15–0.05

2.5±0

.2

7.5±0

.2

2±0.2

a

b

Thermal resistance(junction to case)Thermal resistance(junction to ambient air)

Low voltage protection operation voltage

Forward voltage characteristics between output DMOS and DS

Overcurrent limiting operation current

Input terminal voltage VIN1, VIN2

Input terminal current VIN1, VIN2

a) Part No.b) Lot No.

Page 65: datashet automotriz

63

Page 66: datashet automotriz

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

Power MOS FET output leakage voltage

High-side Power MOS FEToutput on-state voltage

Power MOS FET output breakdown voltage

Delay time

BVOUT

IO=0.4A, VIN=10V

VO=500V

IO=100µA

IO=2A, VIN=10V

VCC=10V, VM=400V

VCC=4.5 to 15V

VCC=10A, VIN=10V,

VM=85A,

IO=0.41A

VCC=4.5 to 15V

V500

0.28 0.4

1.4 2.0

100 µA

0.52

2.6

V

V

4.0 mA

0.8VCC V

1.4

V

µs

0.2VCC

V

IOUT (off)

VOUT (on) 1

VOUT (on) 2

Low-side Power MOS FEToutput on-state voltage

IO=0.4A, VGL=10V

IO=2A, VGL=10V

0.28 0.4

1.4 2.0

0.52

2.6

V

V

VOUT (on) 1

VOUT (on) 2

Quiescent circuit currentVCC=4.5 to 15V

VCC=10V, VM=400V

3.0

4.0

mA

mA

ICC 1

ICC 2

ICC 3

VIH

VIL

td (on)

3.3 µstd (off)

–40 to +105ºC

2.5

15

µs∆t

VCC

Input voltage (Low level)

Operating voltage

Operating circuit current

Input voltage (High level)

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Power source voltage

Input voltage

Output voltage

Output current

Power dissipation

Storage temperature

Operation temperature

VM

VIN

VO

IO

PD

Tstg

Topr

V

V

V

A

W

ºC

ºC

500

15

500

15

5 (Ta=25ºC)

–40 to +125

–40 to +105

*

Block Diagram

Timing Chart

External Dimensions (unit: mm)

64

Features One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required

High Voltage Full Bridge Drive ICs SLA2402M

* Power GND (D terminal) to -HV (-HV terminal) voltage.

*

31.0±0.2

4.8±0.2

1.7±0.1

24.4±0.2

16.4±0.2

16.0

±0.2

2.45±0.2

9.9±0

.2

13.0

±0.2

2.7

Ellipse 3.2±0.15•3.83.2±0.15

17• P1.68±0.1=28.56

8.5

max

31.5 max

9.5

min

Lead

pla

te th

ickn

ess

resi

ns 0

.8m

ax

0.65+0.2–0.1

+0.2–0.1

+0.2–0.1

1.0

0.55

4

2

3 6 810

9 1113 16

17

15

7+12V

OUT1 OUT2

GL1 GL2

HO2

LO2

HO1

MIC

CPU

VCC

VIN1 VIN2–HVLO1

D1MOSQ1 MOSQ2

MOSQ'1 MOSQ'2

L GND

* Dotted Line: Outside Connection

VCC

IN1

IN2

HO1

HO2

LO2

LO1

OUT2-GND

—HV0V

–400V

–100V

OSC 400HzIgnition

VIN10V

0V

10%

10% 10%

10%VOUT1

td (on) td (on)

10%

10% 10%

10%

VIN1

0V

0V

VOUT2

td (on) td (on)

Highside switch turn-on, turn-off Lowside switch turn-on, turn-off

* About delay timeSignal input waveform vs output waveform

* ∆t: ∆t=td (on) – td (off)

Measurement Circuit

VIN1

VIN2

VM

VOUT1 VOUT2

VIN2

VIN1

RL

ConditionsVCC=10V, VIN=10V (pulse)VM=85VIO=0.41A (RL=207Ω)

*

Without heatsink

PW 250µsa: Part No.b: Lot No.

1 2

ab

When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.

Page 67: datashet automotriz

Quiescent circuit current

Quiescent circuit current supplied high voltage

Quiescent circuit current supplied high voltage

Quiescent circuit current

Operating circuit current

Operating circuit current

00

5 10 15 20

0.5

1.0

1.5

2.0

2.5

3.0

Qui

esce

nt c

ircu

it cu

rren

t I C

C1

(mA

)

Operation voltage VCC (V)

–40ºC

VIN=0V

00

5 10 15 20

1

2

3

4

5

Qui

esce

nt c

ircu

it cu

rren

t I C

C2

(mA

)

Operation voltage VCC (V)

150ºC

105ºC

25ºC

150ºC105ºC

25ºC

–40ºC

00

1 2 3 4

2

4

6

8

10

0

2

4

6

8

10

1

0

2

3

4

5

6

7

8

Out

put

on-

stat

e vo

ltag

e (

V)

Output current (A) Ambient temperature (ºC) Input voltage VIN (V)

–500

0 50 100 150 –50 0 50 100 150

–50 0 50 100 1500

2

4

6

8

10

0 5 10 15

1

2

3

4

5

Out

put

on-

stat

e vo

ltag

e (

V)

Gat

e d

rive

vo

ltag

e V

GL

(V)

Gat

e d

rive

vo

ltag

e V

GL

(V)

Inp

ut t

hres

hold

vo

ltag

e V

IH, V

IL (V

)

Ambient temperature (ºC) Ambient temperature (ºC)

VIN=0VVM=400V

00

100 200 300 500400

0.5

1.0

1.5

2.0

2.5

3.0

Qui

esce

nt c

ircu

it cu

rren

t I C

C2

(mA

)

High voltage VM (V)

150ºC

105ºC

25ºC

–40ºC

VIN=0VVCC=10V

00

100 200 300 500400

0.5

1.0

1.5

2.0

2.5

3.0

Qui

esce

nt c

ircu

it cu

rren

t I C

C2

(mA

)

High voltage VM (V)

VCC= 15V

12V

10V

4.5V

9V

Ta=25ºC

Ta=25ºC

00

100 200 300 500400

0.5

1.0

1.5

2.0

2.5

3.5

Gate drive voltage

Input threshold voltage

Output on-state voltage

Output on-state voltage

Gate drive voltage

3.0

Op

erat

ing

cir

cuit

curr

ent

I CC

3 (m

A)

High voltage VM (V)

VCC= 15V

12V

10V

4.5V

9V

Ta=25ºC

00

100 200 300 400 500

0.5

1.0

1.5

2.0

2.5

3.0

Op

erat

ing

cir

cuit

curr

ent

I CC

3 (m

A)

High voltage VM (V)

150ºC

105ºC

25ºC

–40ºC

VCC=VIN1(2)=10V

VCC=10V

VCC=15V

VCC= 4.5V

VCC=9V

VCC=10V

IO=2A

IO=0.4A

VIH

VIL

VCC=VIN=10V

VCC=VIN=10V

150ºC

105ºC

25ºC

–40ºC

Electrical Characteristics

65

High Voltage Full Bridge Drive ICs SLA2402M

Page 68: datashet automotriz

High side switch turn-on, off High side switch turn-on, off

Low side switch turn-on, off

Low side switch turn-on, off

Power derating curve

Transient thermal resistance characteristics Safe operating area (Power MOS FET)

4 6 8 10 12 14 160

1.0

2.0

3.0

4.0

5.0

turn

-on,

off

(µs

)

Operation voltage VCC (V)

turn-on

turn-off

4 6 8 10 12 14 160

1.0

2.0

3.0

4.0

5.0

turn

-on,

off

(µs

)

Operation voltage VCC (V)

turn-on

turn-off

Ta=25ºCVM=85V, IO=0.41A

–50 0 50 100 1500

1.0

2.0

3.0

4.0

5.0

turn

-on,

off

(µs

)

Ambient temperature (ºC)

turn-on

turn-off

VM=85V, IO=0.41AVCC=10V

–50 0 50 100 1500

1.0

2.0

3.0

4.0

5.0

turn

-on,

off

(µs

)

Ambient temperature (ºC)

turn-on

–50 0 50 100 1500

2

1

3

4

5

6

Po

wer

dis

sip

atio

n (W

)

Ambient temperature (ºC)

turn-off

VM=85V, IO=0.41AVCC=10V

Ta=25ºCVM=85V, IO=0.41A

0.0001 0.001 0.01 0.1 1 10 1000.001

0.01

0.1

1

10

100

Tran

sien

t the

rmal

resi

stan

ce (

ºC/W

)

Power time (s)

Ta=25ºCSingle pulse

10 10001000.01

0.1

1

10

100

Dra

in c

urre

nt (

A)

Drain to source voltage (V)

Ta=25ºCSingle pulse

RDS (on)limited

1ms

10ms

100µs

without heatsink

66

Electrical Characteristics

High Voltage Full Bridge Drive ICs SLA2402M

Page 69: datashet automotriz

67

Page 70: datashet automotriz

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

Power MOS FET output leakage voltage

High-side Power MOS FEToutput on-state voltage

Power MOS FET output breakdown voltage

Delay time

BVOUT

IO=0.4A, VIN=10V

VO=500V

IO=100µA

VCC=10V, VM=400V

VCC=6 to 15V

VCC=10A, VIN=10V,

VM=85V, IO=0.41A

VCC=6 to 15V

V500

0.18 0.26

100 µA

0.34 V

4.0 mA

0.8VCC V

2.0

V

µs

0.2VCC

6 V

IOUT (off)

VOUT (on)

Lowside Power MOS FEToutput on-state voltage IO=0.4A, VGL=10V0.18 0.26 0.34 VVOUT (on)

Quiescent circuit currentVCC=6 to 15V

VCC=10V, VM=400V

3.0

4.0

mA

mA

ICC 1

ICC 2

ICC 3

VIH

VIL

td (on)

3.0 µstd (off)

–40 to +125ºC 15VCC

Input voltage (Low level)

Operating voltage

Operating circuit current

Input voltage (High level)

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Power source voltage

Input voltage

Output voltage

Output current

Power dissipation

Storage temperature

Operation temperature

VM

VIN

VO

IO

PD

Tstg

Topr

V

V

V

A

W

A

W

Tc=25ºC

Without heatsink

With infinite heatsink

ºC

ºC

500

15

500

7

IO (peak) 15

5 (Ta=25ºC)

40 (Tc=25ºC)

–40 to +125

–40 to +125

Junction temperature Tj ºC150

*

68

Features One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required

High Voltage Full Bridge Drive ICs SLA2403M

* Power GND (D terminal) to -HV (-HV terminal) voltage.

*

Block Diagram

* Dotted Line: Outside Connection

4

3

5

2 6 8 10 9 11 13 17

14

16

15D2

7

OUT1 OUT2

GL1 GL2

HO2

LO2

HO1

MIC

CPU

VCC

VIN1 VIN2–HV

LO1

D1MOSQ1 MOSQ2

MOSQ'1 MOSQ'2

L GND

VIN10V

0V

10%

10% 10%

10%VOUT1

td (on) td (on)

10%

10% 10%

10%

VIN1

0V

0V

VOUT2

td (on) td (on)

Highside switch turn-on, turn-off Lowside switch turn-on, turn-off

* About delay timeSignal input waveform vs output waveform

* ∆t: ∆t=td (on) – td (off)

Measurement Circuit

VIN1

VIN2

VM

VOUT1 VOUT2

VIN2

VIN1

RL

ConditionsVCC=10V, VIN=10V (pulse)VM=85VIO=0.41A (RL=207Ω)

1 2

External Dimensions (unit: mm)

31.0±0.2

4.8±0.2

1.7±0.1

24.4±0.2

16.4±0.2

16.0

±0.2

2.45±0.2

9.9±0

.2

13.0

±0.2

2.7

Ellipse 3.2±0.15•3.83.2±0.15

17• P1.68±0.1=28.56

8.5

max

31.5 max

9.5

min

Lead

pla

te th

ickn

ess

resi

ns 0

.8m

ax

0.65+0.2–0.1

+0.2–0.1

+0.2–0.1

1.0

0.55

Timing Chart

VCC

IN1

IN2

HO1

HO2

LO2

LO1

OUT2-GND

—HV0V

–400V

–100V

OSC 400HzIgnition

a: Part No.b: Lot No.

ab

PW 250µs

* When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.

Page 71: datashet automotriz

Quiescent circuit current

Quiescent circuit current supplied high voltage

Quiescent circuit current supplied high voltage

Quiescent circuit current supplied high voltage

Operating circuit current

Operating circuit current

00

5 10 15 20

0.5

1.0

1.5

2.0

2.5

3.0

Qui

esce

nt c

ircu

it cu

rren

t I

CC

1 (m

A)

Operation voltage VCC (V)

00

5 10 15 20

1

2

3

4

5

Qui

esce

nt c

ircu

it cu

rren

t I

CC

2 (m

A)

Operation voltage VCC (V)

00

1 2 3 4

1

2

3

4

6

5

0

2

4

6

8

10

1

0

2

3

4

5

6

7

Out

put

on-

stat

e vo

ltag

e

VO

UT

(ON

) (V

)

Output current IOUT (A) Ambient temperature (ºC) Input voltage VIN (V)

–500

0 50 100 150 –50 0 50 100 150

–50 0 50 100 2001500

2

4

6

8

10

0 5 10 15

1

2

3

4

Out

put

on-

stat

e vo

ltag

e V

OU

T (O

N) (

V)

Inp

ut t

hres

hold

vo

ltag

e V

IH (V

)

Gat

e d

rive

vo

ltag

e V

GL

(V)

Inp

ut t

hres

hold

vo

ltag

e V

IL (V

)

Ambient temperature (ºC) Ambient temperature (ºC)

00

100 200 300 500400

0.5

1.0

1.5

2.0

2.5

3.0

Qui

esce

nt c

ircu

it cu

rren

t I

CC

2 (m

A)

High voltage VM (V)

00

100 200 300 500400

0.5

1.0

1.5

2.0

2.5

3.5

3.0

Qui

esce

nt c

ircu

it cu

rren

t I

CC

2 (m

A)

High voltage VM (V)

00

100 200 300 500400

0.5

1.0

1.5

2.0

2.5

4.0

3.5

Input threshold voltage

Input threshold voltage

0

2

4

6

10

8

–50 0 50 100 150

Gat

e d

rive

vo

ltag

e V

GL

(V)

Ambient temperature (ºC)

Gate drive voltage

Output on-state voltage

Output on-state voltage

Gate drive voltage

3.0

0

0.5

1.0

1.5

2.0

2.5

4.0

3.5

3.0

Op

erat

ing

cir

cuit

curr

ent

IC

C3

(mA

)

High voltage VM (V)

0 100 200 300 400 500

Op

erat

ing

cir

cuit

curr

ent

IC

C3

(mA

)

High voltage VM (V)

VIN=0V

150ºC

125ºC

25ºC

85ºC

–40ºC

VIN=0VVM=400V

150ºC

85ºC

125ºC

25ºC

–40ºC

VIN=0VVCC=10V

Ta=25ºC

Ta=25ºC

Ta=25ºC

150ºC

125ºC

25ºC

85ºC

–40ºC

VCC=VIN1(2)=10V

VCC=15V

VCC= 6V

VCC=10V

VCC=VIN=10V

VCC=VIN=10V

–40ºC

150ºC125ºC

25ºC

85ºC

VCC= 15V

12V

10V

6V

9V

VCC= 15V

10V

12V

6V

9V

IO=2A

IO=0.4A

150ºC

125ºC

85ºC

25ºC

–40ºC

VCC=10V

VCC=6V

VCC=10V

VCC=6V

VCC=10V

VCC=6V

Electrical Characteristics

69

High Voltage Full Bridge Drive ICs SLA2403M

Page 72: datashet automotriz

High side switch turn-on, off High side switch turn-on, off

Low side switch turn-on, off

Low side switch turn-on, off

Power derating curve

Transient thermal resistance characteristics Safe operating area (Power MOS FET)

4 6 8 10 12 140

1.0

2.0

3.0

4.0

5.0

turn

-on,

off

s)

Operation voltage VCC (V)

4 6 8 10 12 140

1.0

2.0

3.0

4.0

5.0

turn

-on,

off

s)

Operation voltage VCC (V)

–50 0 50 100 1500

1.0

2.0

3.0

4.0

5.0

turn

-on,

off

s)

Ambient temperature (ºC)

–50 0 50 100 1500

1.0

2.0

3.0

4.0

5.0

turn

-on,

off

s)

Ambient temperature (ºC)

–50 0 50 100 1500

10

20

30

40

50

Po

wer

der

atin

g

PD

(W)

Ambient temperature (ºC)

0.001 0.01 0.1 1 10 1000.001

0.01

0.1

1

10

100

Tran

sien

t the

rmal

resi

stan

ce

(ºC

/W)

Power time (s)

10 10001000.01

0.1

1

10

100

Dra

in c

urre

nt

(A)

Drain to source voltage (V)

Ta=25ºCSingle pulse

Tc=25ºC

Ta=25ºCSingle pulse

without heatsink

turn-on

turn-off

VM=85V, IO=0.41AVCC=10V

turn-on

turn-off

VM=85V, IO=0.41AVCC=10V

turn-on

turn-off

Ta=25ºCVM=85V, IO=0.41A

turn-on

turn-off

Ta=25ºCVM=85V, IO=0.41A

1ms

10ms

100µs

10µsRDS (on)limited

70

Electrical Characteristics

High Voltage Full Bridge Drive ICs SLA2403M

Page 73: datashet automotriz

71

Page 74: datashet automotriz

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

IGBT output breakdown voltage

IGBT output leak current

IGBT output ON voltage

Quiescent circuit current

Operating circuit current

Input threshold voltage

Low-side IGBT gate drive voltage

Delay time*

Operating voltage

BVOUT

IOUT (off)

VOUT (on)

Icc1

Icc2

Icc3

VIH

VIL

VGL

td (on)

td (off)

td (on)

td (off)

∆td

Vcc

Io = 100µA, Tj = 25°C

Vo = 500V

Io = 0.4A, VIN (or VGL) = 10V

Io = 2.0A, VIN (or VGL) = 10V

Vcc = 10V, VM = VIN = 0V

Vcc = 10V, VM = 400V, VIN = 0V

Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V

Vcc = 9 to 15V

Vcc = 9 to 15V

∆td = H/S td (off) - L/S td (on) or L/S td (off) - H/S td (on)

Ta = –40 to +105°C

V

µA

V

V

mA

mA

mA

V

V

V

µs

µs

µs

µs

µs

V

570

0.8•Vcc

0.8•Vcc

0.6

1.8

0.8

1.3

9

1.0

1.3

0.7

2.2

0.9

1.6

100

1.2

1.8

3.0

4.0

4.0

0.2•Vcc

16

0.8

2.6

1.0

1.9

2.5

15

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Power supply voltage

Input voltage

Operation voltage

Output voltage

Output current (DC)

Output current (pulses)

Power dissipation

Thermal resistance

Operating temperature

Storage temperature

Junction temperature

IGBT single pulse avalanche resistance

ESD protection

VM

VIN

Vcc

Vo

Io(DC)

Io(pulse)

PD

j-a

j-c

Topr

Tstg

Tj

EAS

ESD

V

V

V

V

A

A

W

°CW

°C

°C

°C

mJ

kV

Power GNG to HV

Single pulse (PW = 50µs max.)

Tc = 25°C

Tc = 25°C

VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A

Human body model (C = 100pF, R = 1.5kΩ)

500

15

15

500

7

15

4

20

31.2

6.2

–40 to +105

–40 to +150

150

5

±2

72

Features One Package Full Bridge Driver Consisted of High Voltage IC and Power IGBT (4 pieces) High Voltage Driver which accepts direct connection to the input signal line

High Voltage Full Bridge Drive ICs SMA2409M

Block Diagram

Timing Chart

External Dimensions (unit: mm)

* Dotted Line: Outside Connection

(Ta = 25°C)

(Ta = 25°C)

Recommended Operation Range

High side

Low side

Parameter Symbolmin typ max

Unit ConditionsRatings

Dead time td Ta = –40 to +105°Cµs5.0

6

4 VCCD1 D2

2

OUT1 OUT2

3 5 7 9 8 10 11 13

14

12IGBT Q1 IGBT Q2

IGBT Q'1GL1

IGBT Q'2GL2

HO1 HO2

LO2LO1MIC

VIN1 VIN2–HV L GND

CPU

A Drive Example

VCCOSC250Hz

IN1

IN2

LO1

LO2

–HV–GND

OUT1–GND

OUT2–GND

0V

0V

0V

–400V–85V

–85V

–85V

–400V

–400V

Ignition

31.3±0.2

a

b

31.0±0.2 4.0±0.2

14•P2.03±0.1= (28.42)

10.2

±0.2

2.7±

0.2

(10.

4)

0.55 1.2±0.2

0.65+0.2–0.1

+0.2–0.11.16

+0.2–0.1

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

a: Part No.b: Lot No.

Vout2

VIN10V

0V

10% 10%

10%10%

VIN1

Vout1

0V

0V

10% 10%

10%10%

td(on) td(off)

VIN1VIN2

VIN1

RL

VIN2

VOUT1 VOUT2

VM = 85V, Io = 0.41AVcc = 10VVIN = 10V (Out Stage = ON)VIN = 0V (Out Stage = OFF)

Highside switch turn-on, turn-off Lowside switch turn-on, turn-off

* About delay timeSignal input waveform vs output waveform

Measurement Circuit ConditionsVCC=10V, VIN=10V (pulse)VM=85VIO=0.41A (RL=206Ω)

1 2

* When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.

(root dimensions) (root dimensions)

Page 75: datashet automotriz

73

00

5 10 15 20

0.5

1.0

1.5

2.0

2.5

3.5

3.0

00

5 10 15 20

1

2

3

4

5

00.5

1 2 3 4

1.0

1.5

2.0

0

2

4

6

8

10

1

0

2

3

4

5

6

8

7

–500.6

0 50 100 150 –50 0 50 100 200150

–50 0 50 100 2001500

2

4

6

8

14

12

10

0 5 10 15

0.8

1.2

1.6

1.0

1.4

1.8

2.0

00

100 200 300 500400

0.5

1.0

1.5

2.0

3.0

2.5

4.0

3.5

00

100 200 300 500400

0.5

1.0

1.5

2.0

2.5

3.5

3.0

00

100 200 300 500400

0.5

1.0

1.5

2.0

2.5

3.5

0

2

4

6

14

12

10

8

–50 0 50 100 150

3.0

0

0.5

1.0

1.5

2.0

2.5

3.5

3.0

0 100 200 300 400 500

VIN=0V

150ºC

125ºC

25ºC

–40ºC

VIN=0VVM=400V

150ºC

105ºC

25ºC

–40ºC

VIN=0VVCC=10V

Ta=25ºC

Ta=25ºC

Ta=25ºC

150ºC

105ºC

25ºC

–40ºC

VCC=VIN1(2)=10V

VCC=15V

VCC=9V

VCC=VIN=10V

VCC=VIN=10V

–40ºC

150ºC

105ºC

25ºC

VCC= 15V

12V

10V

6V

4.5V

9V

VCC= 15V

10V

12V

6V

4.5V

9V

IO=2A

IO=0.4A

150ºC105ºC25ºC

–40ºC

VCC=15V

VCC=9V

VCC=15V

VCC=9V

VCC=15V

VCC=9V

Electrical Characteristics

High Voltage Full Bridge Drive ICs SMA2409M

Quiescent circuit current

Quiescent circuit current supplied high voltage

Quiescent circuit current supplied high voltage

Quiescent circuit current supplied high voltage

Operating circuit current

Operating circuit current

Qui

esce

nt c

ircu

it cu

rren

t I

CC

1 (m

A)

Operation voltage VCC (V)

Qui

esce

nt c

ircu

it cu

rren

t I

CC

2 (m

A)

Operation voltage VCC (V)

Out

put

on-

stat

e vo

ltag

e

VO

UT

(ON

) (V

)

Output current IOUT (A) Ambient temperature (ºC) Input voltage VIN (V)

Out

put

on-

stat

e vo

ltag

e V

OU

T (O

N) (

V)

Inp

ut t

hres

hold

vo

ltag

e V

IH (V

)

Gat

e d

rive

vo

ltag

e V

GL

(V)

Inp

ut t

hres

hold

vo

ltag

e V

IL (V

)

Ambient temperature (ºC) Ambient temperature (ºC)

Qui

esce

nt c

ircu

it cu

rren

t I

CC

2 (m

A)

High voltage VM (V)

Qui

esce

nt c

ircu

it cu

rren

t I

CC

2 (m

A)

High voltage VM (V)

Input threshold voltage

Input threshold voltage

Gat

e d

rive

vo

ltag

e V

GL

(V)

Ambient temperature (ºC)

Gate drive voltage

Output on-state voltage

Output on-state voltage

Gate drive voltage

Op

erat

ing

cir

cuit

curr

ent

IC

C3

(mA

)

High voltage VM (V)

Op

erat

ing

cir

cuit

curr

ent

IC

C3

(mA

)

High voltage VM (V)

Page 76: datashet automotriz

7 9 11 13 150

0.5

1.0

1.5

2.0

2.5

3.0

7 9 11 13 150

0.5

1.0

1.5

2.0

–50 0 50 100 1500

0.5

1.0

1.5

2.5

2.0

3.5

3.0

–50 0 50 100 1500

0.5

1.0

1.5

2.0

2.5

–50 0 50 100 1500

1

2

3

4

5

0.001 0.01 0.1 1 10 1000.01

0.1

1

10

100

10 10001000.1

1

10

100

Col

lect

or c

urre

nt

(A)

Ta = 25°CSingle pulse

without heatsink

t d (on)

t d (off)

t d (on)

t d (off)

t d (on)

t d (off)

1ms

10ms

100µs

74

Electrical Characteristics

t d (on)

t d (off)

High Voltage Full Bridge Drive ICs SMA2409M

High side switch turn-on, off High side switch turn-on, off

Low side switch turn-on, off

Low side switch turn-on, off

Power derating curve

Transient thermal resistance characteristics IGBT ASO characteristics

turn

-on,

off

s)

Operation voltage VCC (V)

turn

-on,

off

s)

Operation voltage VCC (V)

turn

-on,

off

s)

Ambient temperature (ºC)

turn

-on,

off

s)

Ambient temperature (ºC)

Po

wer

der

atin

g

PD

(W)

Ambient temperature (ºC)

Tran

sien

t the

rmal

resi

stan

ce

(ºC

/W)

Power time (s) Collector-emitter voltage (V)

Page 77: datashet automotriz

75

Page 78: datashet automotriz

Custom ICs

76

Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips.

Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available.

Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic

devices.

Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic

IC configuration.

Features

All semiconductor chips used are

manufactured by Sanken.

Main product lineup consists of

power ICs produced out of many

years' experience of Sanken.

Uses monolithic chips with flip-chip

construction.

Mainly available in miniature

transfer-mold packages.

Examples of Custom Hybrid IC Products Regulators for alternators

Igniters

Power supply for microcomputer

system

Power steering control IC

Motor and actuator driver

Others

Lead frame type multi-chip power IC

One-chip power IC

Surface-mount power IC

Lead frame type power hybrid IC with ceramic substrate

High-output high-breakdown voltage IC Simplified integration of custom circuits Distribution of unit functions (Actuators may be built in the device)

Examples of Sanken Automotive Hybrid ICs

Page 79: datashet automotriz

External Dimensions (unit: mm)

77

STA 10pin

25.25

9.0

4.0

31.0

10.2

4.0 4.031.0

10.2

SMA15pinSMA12pin

3GR-F 3GR-M STR-S

SLA12pin

SPM SMD16pin SPF16pin

SPF24pinSPF20pin

SLA15pin

SLA18pin

15.6

23

5.5 19.8 5.5

23

24.2 5.5

23

31.0 4.8

16

31.0 4.816

.0

35

16.1

4.8

20.0

9.8

6.8

16

Pin 1 8

9

4.0

12.05

7.5

10.5

2.5

16 15 14 13 12 11 10 9

1 2 3 4 5 6 7 8

17.28

2.5

7.5

10.6

24

1 12

13

31.0 4.8

16.0

MT-100 FM205

5.0 10.0

16.9

4.215.6

19.9

20.2 4.0

9.0

STA 8pin

1.0

10.5

±0.3

+0.1–0.05

0.25+0.15–0.05

2.5±0

.2

14.74±0.2

7.5±0

.2

2±0.2

13.04±0.2

1.27±0.25

20

1 10

11

0.4+0.15–0.05

Fin thickness

Custom ICs

Page 80: datashet automotriz

78

Page 81: datashet automotriz

79

2-2. MOS FETs 2-2-1. MOS FETs ......................................... 108

2SK3710 (60V/70A/6mΩ, Surface-mount) ... 108

2SK3711 (60V/70A/6mΩ) .............................. 109

2SK3724 (60V/80A/5mΩ, Surface-mount) ... 110

2SK3800 (40V/70A/6mΩ, Surface-mount) .. 111

2SK3801 (40V/70A/6mΩ) .............................. 112

2SK3803 (40V/85A/3mΩ, Surface-mount) ... 113

2SK3851 (60V/85A/4.7mΩ) .......................... 114

FKV460S (40V/60A/9mΩ, Surface-mount) ... 115

FKV660S (60V/60A/14mΩ, Surface-mount) 116

2-2-2. MOS FET Arrays ........................... 117

SDK06 (52±5V/3A/0.25Ω, Surface-mount 4-circuits) 117

SDK08 (50V/4.5A/0.08Ω, Surface-mount 4-circuits) 118

SDK09 (12V/6A/0.2Ω, Surface-mount 4-circuits) 119

SLA5027 (60V/12A/0.08Ω, 4-circuits) .......... 120

SLA5098 (40V/20A/0.017Ω, 6-circuits) ....... 121

SMA5113 (450V/7A/1.1Ω, 4-circuits) .......... 122

STA508A (120V/6A/0.2Ω, 4-circuits) ........... 123

STA509A (52±5V/3A/0.25Ω, 4-circuits) ....... 124

2-3 Thyristors 2-3-1. Reverse Conducting Thyristors .. 125

TFC561D (600V, 430A, 1200A/µs) .............. 125

TFC562D (600V, 600A, 1600A/µs) .............. 126

2-4. Diodes 2-4-1. Alternator Diodes .......................... 127

2-4-2. High-voltage Diodes for Igniter .. 128

2-4-3. Power Zener Diodes ................... 129

2-4-4. General-purpose Diodes .......... 130

2 Discretes

2-1. Transistors 2-1-1. Transistors ......................................... 80

2SA1488/1488A (–60V/–4A, –80V/–4A) ...... 80

2SA1567 (–50V/–12A) .................................... 81

2SA1568 (–60V/ 12A) .................................... 82

2SA1908 (–120V/–8A) ..................................... 83

2SB1622 (–200V/–15A) ................................... 84

2SC3852 (60V/3A) ........................................... 85

2SC4024 (50V/10A) ........................................ 86

2SC4065 (60V/±12A) ...................................... 87

2SC4153 (120V/7A) ........................................ 88

2SD2141 (380±50V/6A) .................................. 89

2SD2382 (60±5V/±6A) .................................... 90

2SD2633 (150V/8A) ........................................ 91

FP812 (–100V/–8A) ........................................... 92

MN611S (115±10V/±6A) ................................. 93

MN638S (380±50V/6A) ................................... 94

SSD103 (65±5V/±6A, Surface-mount) ........... 95

2-1-2. Transistor Arrays ............................ 96

SDA03 (–60V/–6A, Surface-mount 4-circuits) 96

SDA04 (–60V/–6A, Surface-mount 2-circuits) 97

SDC09 (65±5V/6A, Surface-mount 2-circuits) 98

SLA8004 (60V/12A, –55V/–12A, H-bridge) ......... 99

SPF0001 (115±10V/±6A, Surface-mount 2-circuits) 100

STA315A (35±5V/2A, 3-circuits) .................. 101

STA335A (35±5V/3A, 2-circuits) .................. 102

STA415A (35±5V/2A, 4-circuits) .................. 103

STA460C (60±10V/±6A, 2-circuits) .............. 104

STA461C (65±5V/±6A, 2-circuits) ................ 105

STA463C (115±10V/±6A, 2-circuits) ............ 106

STA464C (65±5V/6A, 4-circuits) .................. 107

±

Page 82: datashet automotriz

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics (common emitter)

SymbolRatings

Unit

(Ta=25ºC) (Ta = 25ºC)

VCBO –602SA1488 2SA1488A

Symbol Test ConditionsRatings

Unit

ICBO

–12

VCC(V)

6

RL(Ω)

–2

IC(A)

–10

VBB1(V)

5

VBB2(V)

–200

IB1(mA)

200

IB2(mA)

0.25typ

ton(µs)

0.75typ

tstg(µs)

0.25typ

t f(µs)

µAVCB = –80–60

–100max–100max2SA1488A2SA1488

IEBO µAVEB = –6V –100max

V(BR) CEO V

V

IC = –25mA –60min –80minhFE VCE = –4V, IC = –1A 40min

VCE (sat) VIC = –2A, IB = –0.2A –0.5max fT MHzVCE = –12V, IE = –0.2A 15typ

COB pFVCB = –10V, f = 1MHz 90typ

VCEO VV

–60–80–80

VEBO V–6IC A–4IB A–1PC W25 (Tc = 25ºC)Tj ºC150Tstg ºC–55 to +150

IC—VCE Characteristics (typ.)

PC—Ta Derating

IC—VBE Temperature Characteristics (typ.)

hFE—IC Characteristics (typ.) hFE—IC Temperature Characteristics (typ.)

fT—IE Characteristics (typ.)

j-a—t Characteristics

Safe Operating Area (single pulse)

VCE (sat)—IB Characteristics (typ.)

Power Transistor 2SA1488/1488A

80

–30mA

–40mA

–50mA–60mA

–20mA

–10mA

IB = –5mA

–80m

A

0.7

1

5

30

20

10

200 25 50 75 100 125 150

With infinite heatsink

Without heatsink

10 50 1003 5

–1

–0.5

–0.05

–0.1

–10

–5

Without heatsinknatural air cooling

20

50

100

500

Typ

1ms10ms

100ms

DC

150 • 150 • 2100 • 100 • 250 • 50 • 2

20

50

100

200125ºC

25ºC

–30ºC

0.005 0.01 0.05 0.50.1 1 30

10

20

30

60

50

40 Typ

00

–4

–3

–2

–1

–6 –0.01 –0.05 –0.1 –0.5 –1–5–4–3–2–1

VCE (V)

I C (A

)

–0.5

–1.0

–1.5

0

IB (A)

VC

E (s

at) (

V)

–1A–2A

IC = –3A

0

–1

–2

–3

–4

0 –0.5 –1.0 –1.5

VBE (V)

I C (A

)

(VCE = –4V)

12

5ºC

(C

ase

te

mp

era

ture

)

25

ºC (

Ca

se

te

mp

era

ture

)–3

0ºC

(C

as

e t

em

pe

ratu

re)

1 10 100 1000

t (ms)

j-a

(ºC

/W)

(VCE = –4V)(VCE = –4V)

–0.02–0.01 –0.1 –0.5 –1 –4 –0.1 –1 –4

IC (A)IC (A)

h FE

h FE

f T (M

Hz)

(VCE = –12V)

IE (A) VCE (V)

I C (A

)

Ta (ºC)

PC

(W)

natural air coolingSilicone grease

Aluminum heatsinkUnit: mm

a) Part No.b) Lot No.(Unit: mm)

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

2.2

ab

Page 83: datashet automotriz

Symbol Ratings Unit

(Ta = 25ºC) (Ta=25ºC)

VCBO –50Symbol Test Conditions Ratings Unit

ICBO

–24

VCC(V)

4

RL(Ω)

–6

IC(A)

–10

VBB1(V)

5

VBB2(V)

–120

IB1(mA)

120

IB2(mA)

0.4typ

ton(µs)

0.4typ

tstg(µs)

0.2typ

t f(µs)

µAVCB = –50V –100max IEBO µAVEB = –6V –100max

V(BR) CEO VIC = –25mA –50minhFE VCE = –1V, IC = –6A 50min

VCE (sat) VIC = –6A, IB = –0.3A –0.35max fT MHzVCE = –12V, IE = –0.5A 40typ

COB pFVCB = –10V, f = 1MHz 330typ

VCEO VV

–50VEBO V –6IC A–12IB A –3PC W35 (Tc = 25ºC)Tj ºC150Tstg ºC–55 to +150

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics (common emitter)

IC—VCE Characteristics (typ.)

PC—Ta Derating

IC—VBE Temperature Characteristics (typ.)

hFE—IC Characteristics (typ.) hFE—IC Temperature Characteristics (typ.)

fT—IE Characteristics (typ.)

j-a—t Characteristics

Safe Operating Area (single pulse)

VCE (sat)—IB Characteristics (typ.)

Power Transistor 2SA1567

81

00

–8

–4

–12

–6

–2

–10

–2–1 –3 –4 –5 –6VCE (V)

I C (A

)

–40mA

–60mA

–100mA–150mA

–20mA

–10mA

–5mA

–200

mA

–10 –50 –100–3 –5

–1

–0.5

–0.05

–0.1

–30

–10

–5

VCE (V)

I C (A

)

Without heatsinknatural air cooling

0

–1.5

–1.0

–0.5

–2 –100–10 –1000 –3000

IB (mA)

VC

E(s

at) (

V)

–0.02 –0.1 –1 –1030

50

100

500

IC (A)

h FE

(VCE = –1V)

Typ

1ms10m

s100msDC

0.3

0.5

4

1

1 10 100 1000

t (ms)

j-a

(ºC

/W)

0.05 0.1 1 120

20

30

40

50

f T (M

Hz)

(VCE = –12V)

IE (A)

Typ

0

–12

–6

–8

–10

–4

–2

0 –1.2–0.4–0.2 –0.6 –0.8 –1.0

VBE (V)

I C (A

)

(VCE = –4V)

12

5ºC

(C

ase

te

mp

era

ture

)2

5ºC

(C

as

e t

em

pe

ratu

re)

–30

ºC (

Ca

se

te

mp

era

ture

)(VCE = –1V)

–0.02 –0.1 –1 –1030

50

100

500

IC (A)

h FE

125ºC

25ºC

–30ºC

35

30

20

10

200 25 50 75 100 125 150

Ta (ºC)

PC

(W)

With infinite heatsink

Without heatsink

50 • 50 • 2

100 • 100 • 2

150 • 150 • 2

–1A–3A

–6A–9A

IC = –12A

IB =

natural air coolingSilicone grease

Aluminum heatsinkUnit: mm

External Dimensions TO220F (full-mold)

a) Part No.b) Lot No.(Unit: mm)B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

Page 84: datashet automotriz

Symbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VCBO –60Symbol Test Conditions Ratings Unit

ICBO

–24

VCC(V)

4

RL(Ω)

–6

IC(A)

–10

VBB1(V)

5

VBB2(V)

–120

IB1(mA)

120

IB2(mA)

0.4typ

ton(µs)

0.4typ

tstg(µs)

0.2typ

t f(µs)

µAVCB = –60V –100maxIEBO mAVEB = –6V –60max

V(BR) CEO VIC = –25mA –60minhFE VCE = –1V, IC = –6A 50min

VCE (sat) VV

IC = –6A, IB = –0.3A –0.35maxVFEC IECO = –10A –2.5maxfT MHzVCE = –12V, IE = 0.5A 40typ

COB pFVCB = –10V, f = 1MHz 330typ

VCEO VV

–60VEBO V–6IC AIB A–3PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150

12±

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics (common emitter)

IC — VCE Characteristics (typ.)

PC — Ta Derating

IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)

fT — IE Characteristics (typ.)

j-a — t Characteristics

Safe Operating Area (single pulse)

VCE (sat) — IB Characteristics (typ.)

Power Transistor 2SA1568

82

00

–8

–4

–12

–6

–2

–10

–2–1 –3 –4 –5 –6

–40mA

–60mA

–100mA–150mA

–20mA

–10mA

IB=

–200

mA

–10 –50 –100–3 –5

–1

–0.5

–0.05

–0.1

–30

–10

–5

Without heatsinknatural air cooling

0

–1.4

–1.0

–0.5

–7 –100–10 –1000 –3000

–0.02 –0.1 –1–12

–102

10

300

100

Typ

–0.02 –0.1 –1–12

–102

10

300

100

1ms10m

s100msDC

0.3

0.5

4

1

1 10 100 1000

0.05 0.1 1 100

20

30

50

40Typ

35

30

20

10

20

0 25 50 75 100 125 150

With infinite heatsink

Without heatsink

50 • 50 • 2100 • 100 • 2

150 • 150 • 2

0

–12

–6

–8

–10

–4

–2

0 –1.2–0.4–0.2 –0.6 –0.8 –1.0

125ºC 25ºC–30ºC

VCE (V)

I C (A

)

IB (mA)

VC

E (s

at)

(V)

–1A

–3A–6A

–9AIC = –12A

VBE (V)

I C (A

)

(VCE = –1V)

12

5ºC

(C

ase

te

mp

era

ture

)2

5ºC

(C

as

e t

em

pe

ratu

re)

–30

ºC (

Ca

se

te

mp

era

ture

)

t (ms)

j-a

(ºC

/W)

(VCE = –1V)

IC (A)

h FE

IC (A)

h FE

(VCE = –1V)

f T (M

Hz)

(VCE = –12V)

IE (A) VCE (V)

I C (A

)

Ta (ºC)

PC

(W)

natural air coolingSilicone grease

Aluminum heatsinkUnit: mm

a) Part No.b) Lot No.

(Unit : mm)

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

Page 85: datashet automotriz

83

IC — VCE Characteristics (typ.)

PC — Ta Derating

IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)

fT — IE Characteristics (typ.)

j-a — t Characteristics

Safe Operating Area (single pulse)

VCE (sat) — IB Characteristics (typ.)

VCE (V)

I C (

A)

IB (mA)

VC

E(s

at)

(V)

VBE (V)

I C (A

)

t (ms)IC (A)

h FE

IC (A)

h FE

f T (

MH

z)

IE (A) VCE (V)

I C (

A)

Ta (ºC)

PC

(W

)

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO –120Symbol Test Conditions Ratings Unit

ICBO

–40

VCC(V)

10

RL(Ω)

–4

IC(A)

–10

VBB1(V)

5

VBB2(V)

–400

IB1(mA)

400

IB2(mA)

0.14typ

ton(µs)

1.40typ

tstg(µs)

0.21typ

t f(µs)

µAVCB = –120V –10maxIEBO µAVEB = –6V –10maxV(BR) CEO VIC = –50mA –120min hFE* VCE = –4V, IC = –3A 50minVCE (sat) VIC = –3A, IB = –0.3A –0.5maxfT MHzVCE = –12V, IE = 0.5A 20typ

COB pFVCB = –10V, f = 1MHz 300typ

VCEO VV

–120VEBO V–6

–8IC AIB A–3PC W75 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics (common emitter)

Power Transistor 2SA1908

External Dimensions FM100 (T03PF)

4.41.5 1.5

B EC

5.45±0.1 5.45±0.1

3.3±0.2

1.6

3.3

1.75

0.8

±0.2

2.15

1.05

23.0

±0.3

16.2

9.5±

0.2

5.5

15.6±0.2 5.5±0.2

3.45±0.2

3.350.65 +0.2–0.1

+0.2–0.1

3.0

0.8

ab

00

–2

–4

–6

–8

–1 –2 –3 –4

–350

mA

–200mA

–150mA

–25mA

–100mA

–75mA

–50mA

IB=–10mA

0

–3

–2

–1

0 –0.2 –0.4 –0.6 –0.8 –1.0

IC= –8A

–4A–2A

0

–8

–6

–2

–4

0 –1.5–1.0–0.5

(VCE = –4V)

–0.02 –0.1 –0.5 –1 –8–530

50

100

200(VCE = –4V)

Typ

0.02 0.10.05 0.5 1 5 80

20

10

30(VCE = –12V)

Typ

0.2

0.5

4

1

1 10 100 1000 2000

80

60

40

20

3.50

0 5025 75 125100 150

(VCE = –4V)

–0.02 –0.1 –0.5 –1 –5 –830

50

100

300

125ºC

25ºC

–30ºC

DC100ms

10ms

–10–5 –50 –100 –150–0.1

–1

–0.5

–10

–20

–5

a) Part No.b) Lot No.

(Unit : mm)

With inf inite heatsink

Without heatsink

Without heatsinknatural air cool ing

j-a

C/W

)

12

5ºC

(C

ase

te

mp

era

ture

)2

5ºC

(C

as

e t

em

pe

ratu

re)

–30

ºC (

Ca

se

te

mp

era

ture

)

*Rank: O (50 to 100), P(70 to 140), Y(90 to 180)

Page 86: datashet automotriz

Symbol Ratings Unit

(Ta=25ºC)

VCBO –200VCEO V

V–200

VEBO V –5IC AIB A –1PC W85 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150

–15

Absolute Maximum Ratings

Power Transistor 2SB1622

70

a) Part No.b) Lot No.

(Unit : mm)

External DimensionsElectrical Characteristics (Ta=25ºC)

Symbol Test ConditionsRatings

Unit

ICBO µAVCB = –200Vmin

IEBO µAVEB = –5V

VCEO VIC = –30mAhFE* VCE = –4V, IC = –10A

–200

VCE(sat) VIC = –10A, IB = –10mA5000

VBE(sat) VIC = –10A, IB = –10mAfT MHzVCE = –12V, IE = 2ACOB pFVCB = –10V, f = 1MHz

typ

60270

–100

max

–100

–2.530000

–3.0

–40

VCC(V)

4

RL(Ω)

–10

IC(A)

–10

VBB1(V)

5

VBB2(V)

–10

IB1(mA)

10

IB2(mA)

0.4typ

ton(µs)

3.6typ

tstg(µs)

1.0typ

tf(µs)

Typical Switching Characteristics

*Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

IC — VCE Characteristics (typ.) VCE (sat) — IB Characteristics (typ.) VCE (sat) — IB Temperature Characteristics (typ.)

VCE (sat) — IB Temperature Characteristics (typ.) IC — VBE Temperature Characteristics (typ.) hFE — IC Characteristics (typ.)

hFE — IC Temperature Characteristics (typ.) ton•tstg•tf — IC Characteristics (typ.) j-a — t Characteristics

fT — IE Characteristics (typ.) Safe Operating Area PC — Ta Derating

0

5

I C (A

)

15

10

0 –2 –4 –6

VCE (V)

VC

E(s

at) (

V) –2

–1

0

–3

–10–1–0.2 –100 –200

IB (mA)

5

0

I C (A

)

10

15

5000

1000

h FE

100000

50000

10000

–1 –2 –3

VBE (V)

–1–0.5–0.2 –5 –10 –20

IC (A)

5000

1000

h FE

100000

50000

10000

–1–0.5–0.2 –5 –10 –20

IC (A)

0.5

0.1

1.0

3.0

1 10 100 1000 2000

t (sec)

0.5

t on

•t s

tg•t f

(µse

c)

1

5

0.1

10

–0.2 –5 –10 –20–1–0.5

IC (A)

VC

E(s

at) (

V)

–3

–2

–1

0–0.2 –1 –10 –100 –200

IB (mA)

20

0

f T (M

Hz)

80

60

40

0.02 0.1 0.5 1 5 10

IE (A)

–0.5

–1

–0.05

–0.1

I C (A

)

–10

–50–30

–5

–3 –10 –100 –500

VCE (V)

30

PC (W

)

90

80

70

60

50

40

20

10

00 25 50 75 125 150100

Ta (ºC)

–2

–1

0

VC

E(s

at) (

V)

–3

–0.1 –1 –10 –100 –200

IB (mA)

IB= –0.3mA

–0.5mA

–0.8mA

–1.0mA–1.5mA–50mA

–15mA–5.0mA –3

.0m

A

Ta = 25ºCVCC = –40V–IB1 = IB2 = 10mA

ton

tf

tstg

With infinite heatsink

VCE = –4V

typ

VCE = –4V150ºC125ºC100ºC75ºC

50ºC25ºC0ºC

–30ºC–55ºC

(VCE = – 4V)

Ta=150ºC125ºC100ºC

75ºC50ºC25ºC

0ºC–30ºC–55ºC

IC = –10A

IC = –5A

IC = –5A

IC = –15A

125ºC75ºC25ºC

–30ºC

IC = –10A

125ºC75ºC25ºC

–30ºC

Ta =25ºC(single pulse)

10ms100msD.C.

Without heatsink

84

ab

Without heatsinknatural air cooling

j-a

(ºC

/W)

3.3±0.25.5±0.2

3.45±0.2

5.5

±0.2

9.5

±0.2

23.0

±0.3

0.8

3.0

0.8

1.6

3.3

16.21.75±0.15

2.15±0.15

5.45±0.15.45±0.13.35±0.2

15.6±0.2

1.5

B C E

1.54.4

1.05 –0.1+0.2

0.65–0.1+0.2

Page 87: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 80Symbol Test Conditions Ratings Unit

20

VCC(V)

20

RL(Ω)

1.0

IC(A)

10

VBB1(V)

–5

VBB2(V)

15

IB1(mA)

–30

IB2(mA)

0.8typ

ton(µs)

3.0typ

tstg(µs)

1.2typ

t f(µs)

µA 10maxIEBO µAVEB = 6VICBO VCB = 80V

100max

V(BR) CEO VIC = 25mA 60minhFE VCE = 4V, IC = 0.5A 500min

VCE (sat) VIC = 2A, IB = 50mA 0.5maxfT MHzVCE = 12V, IE = –0.2A 15typ

COB pFVCB = 10V, f = 1MHz 50typ

VCEO VV

60VEBO V 6IC A 3IB A 1PC W25 (Tc=25ºC)Tj ºC150 Tstg ºC–55 to +150

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics (common emitter)

IC — VCE Characteristics (typ.)

PC — Ta Derating

IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)

fT — IE Characteristics (typ.)

j-a — t Characteristics

Safe Operating Area (single pulse)

VCE (sat) — IB Characteristics (typ.)

Power Transistor 2SC3852

85

00

1

2

3

21 3 4 5 6

IB=12mA

0.5mA

1mA

2mA

3mA

5mA

8mA

0.01 0.1 0.5 1 3100

500

2000

1000

(VCE=4V)

Typ

0.01 0.1 0.5 1 3100

500

2000

1000

0.5

1

5

1 10 100 1000

VCB = 10VIE = –2A

10 503 5 1000.05

0.1

1

0.5

10

5

Without heatsinknatural air cooling

DC

100ms

10ms

1ms

0

1.0

1.5

0.5

0.001 0.005 0.01 0.10.05 10.5

2A3A

0

2

3

1

0 1.11.00.5

25ºC

–30ºC

125ºC

–0.005 –0.01 –0.1 –0.5–0.05 –2–1

20

10

0

30

Typ

30

20

10

00 50 100 150

With infinite heatsink

Without heatsink

VCE (V)

I C (

A)

IB (A)

VC

E(s

at)

(V)

IC=1A

VBE (V)

I C (

A)

(VCE = 4V)

12

5ºC

(C

ase

te

mp

era

ture

)2

5ºC

(C

as

e t

em

pe

ratu

re)

–30

ºC (

Ca

se

te

mp

era

ture

)

t (ms)

j-a

(ºC

/W)

(VCE =4V)

IC (A)IC (A)

h FE

h FE

f T (

MH

z)

(VCE = 12V)

IE (A) VCE (V)

I C (

A)

Ta (ºC)

PC

(W

)

a) Part No.b) Lot No.

(Unit : mm)

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

Page 88: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 100Symbol Test Conditions Ratings Unit

ICBO

20

VCC(V)

4

RL(Ω)

5

IC(A)

0.1

IB1(A)

–0.1

IB2(A)

0.5typ

ton(µs)

2.0typ

tstg(µs)

0.5typ

tf(µs)

µAµA

VCB = 100V 10maxIEBO VEB = 15V 10max

V(BR) CEO VIC = 25mA 50minhFE VCE = 4V, IC = 1A 300 to 1600

VCE (sat) VIC = 5A, IB = 0.1A 0.5maxfT MHzVCB = 12V, IE = –0.5A 24typ

COB pFVCB = 10V, f = 1MHz 150typ

VCEO VV

50VEBO V15IC AIB A3PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150

10

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics (common emitter)

IC — VCE Characteristics (typ.)

PC — Ta Derating

IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)

fT — IE Characteristics (typ.)

j-a — t Characteristics

Safe Operating Area (single pulse)

VCE (sat) — IB Characteristics (typ.)

Power Transistor 2SC4024

00

4

2

6

10

8

2 4 6

IB = 35mA

5mA

25mA30mA

10mA

15mA

20mA

0

1.0

1.5

0.5

0.002 0.01 0.1 21

0.02 0.1 0.5 51 10100

500

1000

Typ

0.02 0.1 0.5 51 10100

500

1000

10A

0.3

0.5

1

4

1 10 100 1000

10 503 5 1000.2

1

0.5

30

10

5

Without heatsinknatural air cooling

DC

100ms

10ms

1ms

40

30

20

10

20

0 25 50 75 100 125 150

With infinite heatsink

Without heatsink

50 • 50 • 2 100 • 100 • 2

0

10

2

4

8

6

0 1.21.00.5

25ºC

–30ºC

125ºC

–0.05 –0.1 –1–0.5 –5 –10

20

10

0

30

Typ

VCE (V)

I C (

A)

IB (A)

VC

E (s

at)

(V)

IC = 1A3A

5A

VBE (V)

I C (

A)

(VCE = 4V)

12

5ºC

(C

ase

te

mp

era

ture

)

25

ºC (

Ca

se t

em

pe

ratu

re)

–30

ºC (

Ca

se

te

mp

era

ture

)

t (ms)

j-

a (º

C/W

)

(VCE = 4V)(VCE = 4V)

IC (A)IC (A)

h FE

h FE

f T (

MH

z)

(VCE = 12V)

IE (A) VCE (V)

I C (

A)

Ta (ºC)

PC

(W

)

150 • 150 • 2

natural air coolingSilicone grease

Aluminum heatsinkUnit: mm

a) Part No.b) Lot No.

(Unit: mm)

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

86

Page 89: datashet automotriz

87

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics (common emitter)

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 60Symbol Test Conditions Ratings Unit

ICBO

24

VCC(V)

4

RL(Ω)

6

IC(A)

10

VBB1(V)

–5

VBB2(V)

0.12

IB1(A)

–0.12

IB2(A)

0.6typ

ton(µs)

1.4typ

tstg(µs)

0.4typ

tf(µs)

µAVCB = 60V 100maxIEBO mAVEB = 6V 60max

V(BR) CEO VIC = 25mA 60minhFE VCE = 1V, IC = 6A 50min

VCE (sat) VV

IC = 6A, IB = 1.3A 0.35maxVFEC VECO = 10A 2.5maxfT MHzVCE = 12V, IE = –0.5A 24typ

COB pFVCB = 10V, f = 1MHz 180typ

VCEO VV

60VEBO V6IC AIB A3PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150

±12

IC — VCE Characteristics (typ.)

PC — Ta Derating

IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)

fT — IE Characteristics (typ.)

j-a — t Characteristics

Safe Operating Area (single pulse)

VCE (sat) — IB Characteristics (typ.)

Power Transistor 2SC4065

00

4

2

8

6

12

10

2 4 6

200m

A

IB = 10mA

20mA

40mA

60mA

100mA150mA

0

1.0

1.3

0.5

0.005 0.01 0.1 31

IC = 1A

12A

3A6A

9A

0.02 0.1 1 10 1235

50

10

100

400Typ

0.02 0.1 1 101235

50

10

100

400

0.2

0.5

1

5

1 10 100 1000

10 503 5 1000.05

0.1

1

0.5

30

10

5

Without heatsinknatural air cooling

DC

100ms

10ms

1ms

40

30

20

10

20

0 25 50 75 100 125 150

With infinite heatsink

Without heatsink

50 • 50 • 2 100 • 100 • 2

0

12

10

2

4

8

6

0 1.11.00.5

25ºC

–30ºC

125ºC

–0.05 –0.1 –1–0.5 –5 –12–10

20

10

0

30

Typ

VCE (V)

I C (

A)

IB (A)

VC

E (s

at)

(V)

VBE (V)

I C (

A)

(VCE = 1V)

25

ºC (

Ca

se

te

mp

era

ture

)

12

5ºC

(C

ase

te

mp

era

ture

)

–30

ºC (

Ca

se

te

mp

era

ture

)

t (ms)

j-a

(ºC

/W)

(VCE = 1V)(VCE = 1V)

IC (A)IC (A)

h FE

h FE

f T (

MH

z)

(VCE = 12V)

IE (A) VCE (V)

I C (

A)

natural air coolingSilicone grease

Aluminum heatsinkUnit: mm

Ta (ºC)

PC

(W

)

150 • 150 • 2

a) Part No.b) Lot No.

(Unit: mm)

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

Page 90: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 200Symbol Test Conditions Ratings Unit

ICBO

50

VCC(V)

16.7

RL(Ω)

3

IC(A)

10

VBB1(V)

–5

VBB2(V)

0.3

IB1(A)

–0.6

IB2(A)

0.5max

ton(µs)

3max

tstg(µs)

0.5max

t f(µs)

µAVCB = 200V 100maxIEBO µAVEB = 8V 100max

V(BR) CEO VIC = 50mA 120minhFE VCE = 4V, IC = 3A 70 to 220

VCE (sat) VV

IC = 3A, IB = 0.3A 0.5maxVBE (sat) IC = 3A, IB = 0.3A 1.2maxfT MHzVCE = 12V, IE = –0.5A 30typCOB pFVCB = 10V, f = 1MHz 110typ

VCEO VV

120VEBO V8IC AIB A3PC W30 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150

7 (pulse 14)

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics (common emitter)

IC — VCE Characteristics (typ.)

PC — Ta Derating

IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)

fT — IE Characteristics (typ.) Safe Operating Area (single pulse)

VCE (sat) — IB Characteristics (typ.)

Power Transistor 2SC4153

00

3

4

2

1

5

7

5

21 3 4

200mA

150mA

100mA

IB=10mA

20mA

40mA60mA

0

2

3

1

0.005 0.01 0.1 21

IC = 1A3A 5A

0.01 0.1 0.5 1 7520

50

100

300(VCE = 4V)

Typ

0.01 0.1 0.5 1 7520

50

100

300

0.2

0.5

1

5

1 10 100 1000

–0.01 –0.1 –1 –50

10

20

40

30

Typ

10 100505 2000.05

1

0.5

0.1

20

10

5

Without heatsinknatural air cooling

100µs

10ms

30

20

10

20

0 25 50 75 100 125 150

With infinite heatsink

Without heatsink

0

7

2

3

4

5

6

1

0 1.11.00.5

25ºC

–30ºC

125ºC

VCE (V)

I C (

A)

IB (A)

VC

E (s

at)

(V)

VBE (V)

I C (

A)

(VCE = 4V)

25

ºC (

Ca

se

te

mp

era

ture

)

12

5ºC

(C

ase

te

mp

era

ture

)

–30

ºC (

Ca

se

te

mp

era

ture

)

t (ms)

(VCE = 4V)

IC (A)IC (A)

h FE

h FE

f T (

MH

z)

(VCE = 12V)

IE (A) VCE (V)

I C (

A)

natural air coolingSilicone grease

Aluminum heatsinkUnit: mm

Ta (ºC)

PC

(W

)

50 • 50 • 2100 • 100 • 2

150 • 150 • 2

a) Part No.b) Lot No.

(Unit: mm)

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

j-a — t Characteristics

j-a

(ºC

/W)

88

Page 91: datashet automotriz

89

Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VCBO 380±50Symbol Test Conditions Ratings Unit

ICBO µAVCB = 330V 10maxIEBO µAVEB = 6V 20max

V(BR) CEO VIC = 25mA

hFE VCE = 2V, IC = 3A330 to 430

VCE (sat) VIC = 4A, IB = 20mA 1.5max1500min

VCEO VV

380±50VEBO V6IC AIB A1PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150

6 (pulse 10)

IC — VCE Characteristics (typ.)

PC — Ta Derating

IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)

fT — IE Characteristics (typ.)

j-a — t Characteristics

Safe Operating Area (single pulse)

VCE (sat) — IB Characteristics (typ.)

Power Transistor 2SD2141

00

5

10

2 4 6

IB = 1mA

2mA

4mA18mA

20mA

90mA60mA

0

3

2

1

0.2 10.5 105 20010050

1A

3A5A

IC = 7A

0.02 0.1 10.5 105

500010000

1000500

100

10

50

Typ

0.1

1

5

0.5

1 10 100 1000

1ms

10ms

100ms

501051 100 5000.01

0.05

0.1

1

0.5

10

20

5 DC

Without heatsinknatural air cooling

40

30

20

10

20

0 25 50 75 100 125 150

With infinite heatsink

Without heatsink

0

10

5

0 2.0 2.41.0

0.02 0.1 1.0 50.5 10

500010000

1000500

100

50

20

125ºC

–55ºC25ºC

–0.05–0.01 –0.1 –0.5 –1 –50

20

10

30

40

Typ

VCE (V)

I C (

A)

120mA150mA

IB (mA)

VC

E (s

at)

(V)

VBE (V)

I C (

A)

(VCE = 4V)

25

ºC (

Ca

se t

em

pe

ratu

re)

125º

C (

Cas

e te

mp

erat

ure)

–30

ºC (

Ca

se

te

mp

era

ture

)

t (ms)

j-a

(ºC

/W)

(VCE = 2V)(VCE = 2V)

IC (A)IC (A)

h FE

h FE

f T (

MH

z)

(VCE = 12V)

IE (A) VCE (V)

I C (

A)

natural air coolingSilicone grease

Aluminum heatsinkUnit: mm

Ta (ºC)

PC

(W

)

100 • 100 • 2

150 • 150 • 250 • 50 • 2

a) Part No.b) Lot No.

(Unit: mm)

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

Page 92: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO V65±5Symbol Test Conditions Ratings Unit

ICBO

12

VCC(V)

12

RL(Ω)

1

IC(A)

10

VBB1(V)

–5

VBB2(V)

30

IB1(mA)

–30

IB2(mA)

0.25

ton(µs)

0.8

tstg(µs)

0.35

tf(µs)

µAVCB = 60V 10maxIEBO µAVEB = 6V 10maxVCEO VIC = 50mA 60 to 70hFE VCE = 1V, IC = 1A 700 to 3000VCE (sat) VIC = 1.5A, IB = 15mA 0.15maxVFEC VIFEC = 6A 1.5maxEs/b mJL = 10mH, single pulse 200min

VCEO V65±5VEBO V 6IC A ±6 (pulse ±10)IB A 1PC W30 (Tc=25ºC)Tj ºC150 Tstg ºC–55 to +150

0 1 2 3 4 5

IC — VCE Characteristics (typ.)

PC — Ta Derating

IC — VBE Temperature Characteristics (typ.)

0

10

8

6

4

2

I C (

A)

VCE (V)

0.01 0.05 0.1 10.5 5 10

hFE — IC Characteristics (typ.)

5000

1000

500

100

5030

h FE

IC (A)

(VCE = 1V)

0.01 0.05 0.1 10.5 5 10

hFE — IC Temperature Characteristics (typ.)

5000

1000

500

100

5030

h FE

IC (A)

(VCE = 1V)

–0.01 –0.05 –0.1 –1–0.5 –5 –10

fT — IE Characteristics (typ.)

30

25

20

15

10

5

0

f T (

MH

z)

IE (A)

1 5 10 10050 500 1000

j-a — t Characteristics

5

1

0.5

0.3

j-

a (º

C/W

)

t (ms)

(VCE = 1V)

(IC = 1.5A)

0 50 100 1500

30

20

10

PC (

W)

Ta (ºC)

Safe Operating Area (single pulse)

1 5 10 50 100

20

10

1

0.1

0.5

5

I C (

A)

VCE (V)

0 0.5 1.0 1.50

6

4

5

2

1

3

I C (

A)

VBE (V)

VCE (sat) — IB Temperature Characteristics (typ.)

1 5 10 50 100 4000

0.75

0.5

0.25VC

E (s

at)

(V)

IB (mA)

IB = 1mA

3mA

5mA

10mA

20mA30mA

natural air coolingSilicone grease

Aluminum heatsinkUnit: mm

50 • 50 • 2

100 • 100 • 2

150 • 150 • 2

Without heatsink

With infinite heatsink

Ta=55ºC25ºC75ºC

125ºC

Ta = –55ºC25ºC75ºC

125ºC

Without heatsinknatural air cooling

0.5m

sec

1msec

10msec

100msec

D.C (Tc = 25ºC)

Ta = –55ºC25ºC75ºC

125ºC

Typ

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics

Power Transistor 2SD2382

Typ

a) Part No.b) Lot No.

(Unit: mm)

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

90

Page 93: datashet automotriz

91

Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VCBO 200Symbol Test Conditions Ratings Unit

ICBO µAVCB=200V 100maxIEBO mAVEB=6V 10max

VCEO VIC=50mA

hFE VCE=2V, IC=6A150min

VBE (sat) VIC=6A, IB=6mA 2.0maxVCE (sat) VIC=6A, IB=6mA 1.5max

2000min

VCEO VV

150VEBO V6

8IC AIB A1

PC W35 (Tc=25ºC)

2 (Ta=25ºC, No Fin)Tj ºC150Tstg ºC–55 to +150

Power Transistor 2SD2633

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

a) Part No.b) Lot No.

(Unit: mm)

Page 94: datashet automotriz

0 –1 –2 –3 –4

–8

–6

–4

–2

0

I C (

A)

VCE (V)

–0.01 –0.05 –0.1 –1–0.5 –5 –8

500

100

30

50

h FE

IC (A)

(VCE = –4V)

0.01 0.05 0.1 10.5 5 10

30

20

10

0

f T (

MH

z)

IE (A)

0.0002 0.010.001 0.1 1 10 100

50

10

1

5

0.1

0.5

0.05

j-

a (º

C/W

)

t (sec)

(VCE = 12V)

0 50 100 1500

40

30

20

10

PC

(W

)

Ta (ºC)

–3 –5 –10 –50 –150–100

–12–10

–1

–0.1

–0.5

–5

I C (

A)

VCE (V)

0 –0.5 –1.0 –1.50

–8

–6

–2

–4

I C (

A)

VBE (V)

–5 –10 –50 –100 –500 –2000–10000

–2

–1

VC

E (s

at)

(A)

IB (mA)

IB = –10mA

–25mA

–50mA

natural air coolingSilicone grease

Aluminum heatsinkUnit: mm

100•100•2

200•200•2

Without heatsink

With infinite heatsink

Tc = –40ºC25ºC75ºC

125ºC

Ic = –1A

Ic = –3A

Ic = –5A

1msec10m

sec

100msec

D.C (Tc = 25ºC)

Typ

–75mA

–100mA

–150mA

–200

mA

–300

mA

Tc = 25ºC

Single Pulese

NO Fin (Ta = 2

5ºC)

(VBE = –4V)

natural air coolingWithout heatsink

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO –120 Symbol Test Conditions Ratings Unit

ICBO

–12

VCC(V)

4

RL(Ω)

–3

IC(A)

–10

VBB1(V)

5

VBB2(V)

–30

IB1(mA)

30

IB2(mA)

2.5

ton(µs)

0.4

tstg(µs)

0.6

tf(µs)

µAVCB = –120V 10maxIEBO µAVEB = –6V 10max

VCEO VIC = –50mA –120minhFE VCE = –4V, IC = –3A 70min

VCE (sat) VIC = –3A, IB = –0.3A –0.3max

VCEO VV

–120 VEBO V–6IC A–8 (pulse –12)IB A–3PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics

IC — VCE Characteristics (typ.)

PC — Ta Derating

IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)

fT — IE Characteristics (typ.)

j-a — t Characteristics

Safe Operating Area (single pulse)

VCE (sat) — IB Characteristics (typ.)

Power Transistor FP812

92

Typ

–0.01 –0.05 –0.1 –1–0.5 –5 –8

500

100

50

30

h FE

IC (A)

(VCE = –4V)

Tc = 125ºC

75ºC25ºC

–55ºC

a) Part No.b) Lot No.

(Unit: mm)

External Dimensions TO220F (full-mold)

B C E

C0.5

16.9

(13.

5)8.

40.

83.

94

10.0

2.2

2.6

4.2

2.8

1.351.350.85

2.54 2.54 0.45

3.3

ab

Page 95: datashet automotriz

Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VCBO 115±10Symbol Test Conditions

RatingsUnit

ICBO µAVCB=105V

min

IEBO µAVEB=6V

VCEO VIC=50mAhFE VCE=1V, IC=1A

105

VCE (sat) VIC=1.2A, IB=12mA400

VCEO VV

115±10VEBO V6IC AIB A1

PC W50 (Tc=25ºC)

1.2 (Ta=25ºC, No Fin)Tj ºC150Tstg ºC–55 to +150

VFEC VIFEC=6AES/B mJL=10mA 45

typ

115

0.08800

1.25

10

max

10125

0.121500

1.5

±6 (pulse ±10)

Power Transistor MN611S

93

External Dimensions TO220S

a

b

10.2±0.3

1.27±0.2

2.54±0.52.54±0.5

1.2±0.2

1.6

10.0

8.6±0

.3(1

.4)

–0.5

+0.

3

–0.5

+0.

33.

0

0.86 –0.1+0.2

–0.1+0.2

4.44±0.2

1.3±0.2

0.4±0.1

(1.5

) 0.1

a) Part No.b) Lot No.

(Unit: mm) IC — VCE Characteristics (typ.)

2

1

0

3

4

5

I C (

A)

7

8

6

VCE (sat) — IB Characteristics (typ.)

0

VC

E (s

at)

(V) 0.5

0.75

0.25

VCE (sat) — IB Temperature Characteristics (typ.) IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.) ton•tstg•tf — IC Characteristics (typ.)

j-c • j-a — t Characteristics (Single pulse) Safe Operating Area (Single pulse)

IFEC — VFEC Temperature Characteristics (typ.)

PT — Ta Derating

2

1

0

3

4

I C (

A)

6

7

5

I FE

C (

A)

0.1

I C (

A)

10

20

1

20

10

0

PC (

W)

50

60

40

30

30

h FE

1000

5000

100

10

50

1

0.1

0.1

t on

•tst

g•t

f (µ

sec)

10

1

0 2 3 4 5 6

VCE (V)1 0 100 1000

IB (mA)10

0

VC

E (s

at)

(V) 0.5

0.75

0.25

0 100 1000

IB (mA)10

0.01 1 10

Ic (A)0.1

30

h FE

1000

5000

100

0.01 1 10

Ic (A)0.1

0.001 0.01 0.1 1 10

t (s)

0 1.0 1.5

VBE (V)0.5

2

1

0

3

4

6

7

5

0 1.0 1.50.5

VFEC (V)

0 2 3

Ic (A)1

1 100 200

VCE (V)10 0 75 100 125 150

Ta (ºC)25 50

IB = 1mA

3mA

5mA

10mA

20mA

30mA

Ta = 25ºCVCC = 12VIB1 = –IB2 = 30mA

ton

tf

tstg

(Ta = 25ºC)(VCE = 1V) (VCE = 1V)

typ

Ta = 150ºC125ºC

75ºC25ºC

–55ºC

(Ta = 25ºC)(Ta = 25ºC)

IC = 1.2A

IC = 0.5A

IC = 2A

(IC = 1.2A)

Ta = 150ºC125ºC75ºC25ºC

–55ºC

(VCE = 1V)

Ta = 150ºC125ºC75ºC25ºC

–55ºC

Ta = 150ºC125ºC

75ºC25ºC

–55ºC

(Tc = 25ºC)

FR4 (70 • 100 • 1.6mm) Use substrate j-a

j-c

(Ta = 25ºC)

PT =50µsPT =500µsPT =1msPT =10ms

12

VCC(V)

12

RL(Ω)

1

IC(A)

10

VBB1(V)

–5

VBB2(V)

30

IB1(mA)

–30

IB2(mA)

0.2typ

ton(µs)

5.7typ

tstg(µs)

0.4typ

tf(µs)

Typical Switching Characteristics

Without heatsink

j-c

• j-

a (º

C/W

)

Page 96: datashet automotriz

Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VCBO 380±50Symbol Test Conditions Ratings Unit

ICBO µAVCB=330V 10maxIEBO mAVEB=6V 20max

V(BR) CEO VIC=25mAhFE VCE=2V, IC=3A

330 to 430

VCE (sat) VIC=4A, IB=20mA 1.5max1500min

VCEO VV

380±50VEBO V6IC AIB A1PC W60 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150

6 (pulse 10)

IC — VCE Characteristics (typ.) IC — VBE Temperature Characteristics (typ.)

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.) j-c • j-a —t Characteristics

VCE (sat) — IB Characteristics (typ.)

Power Transistor MN638S

94

00

5

10

2 4 6

IB=1mA

2mA

4mA18mA

20mA

90mA60mA

0

3

2

1

0.2 10.5 105 20010050

1A

3A5A

IC = 7A

0.02 0.1 10.5 105

500010000

1000500

100

10

50

Typ

0.1

1

10

100

0.1 10.010.001 10

0

10

5

0 2.0 2.41.0

0.02 0.1 1.0 50.5 10

500010000

1000500

100

50

20

125ºC

–55ºC25ºC

VCE (V)

I C (

A)

120mA150mA

IB (mA)

VC

E (s

at)

(V)

VBE (V)

I C (

A)

(VBE =4V)

25

ºC (

Ca

se t

em

pe

ratu

re)

125º

C (

Cas

e te

mp

erat

ure)

–30

ºC (

Ca

se

te

mp

era

ture

)

t (s)

(VCE = 2V)(VCE = 2V)

IC (A)IC (A)

h FE

h FE

External Dimensions TO220S

j-a

j-c

a

b

10.2±0.3

1.27±0.2

2.54±0.52.54±0.5

1.2±0.2

1.6

10.0

8.6±0

.3(1

.4)

3.0

–0.5

+0.

3–0

.5+

0.3

0.86 –0.1+0.2

–0.1+0.2

4.44±0.2

1.3±0.2

0.4±0.1

(1.5

) 0.1

a) Part No.b) Lot No.

(Unit: mm)

j-c•

j-a

(ºC

/W)

Page 97: datashet automotriz

95

Absolute Maximum Ratings Electrical Characteristics(Ta=25ºC) (Ta=25ºC)

Symbol Test ConditionsRatings

Unit

ICBO µAVCB = 60V, IE = 0Amin

IEBO µAVEB = 6V, IC = 0A

VCEO VIC = 50mAhFE VCE = 1V, IC = 1A

60

VCE (sat) VIC = 1.5A, IB = 15mA400

VFEC VIFEC = 6AEs/b mJL = 10mH 80

typ

65

0.11800

1.25

10

max

10 70

0.151500

1.5

Surface-mount Power Transistor SSD103

External Dimensions SOP8

Symbol Ratings UnitVCBO 65±5VCEO V

V65±5

VEBO V66

IC (pulse)IC

A10 (Pw 1mS, Duty 25%)IB A10PC W1.5Tj °C150Tstg °C–55 to +150

*1: FR4 70mm•100mm•1.6mm (drain heatsink copper foil area 25•25mm)

0.7±0.2

1.27±0.25

5.0±0.2

1.5±0

.2

4.4±0

.2

6.2±0

.3

0.5±0

.2

5.4Max

0 to 0.1

0.42+0.15–0.05 0.17

+0.15–0.05

a

b

c

d

4.7M

ax

8 5

1 4

0 to 10°

a) Part No.b) Corporate markc) Lot No.d) Control No.

(Unit: mm)

0 1 2 53 4

IC — VCE Characteristics (typ.)

0

5

4

3

2

I C (

A)

VCE (V)

1

7

6

0

0.25

0.75

0.5

0.01 0.1 1 10

VCE (sat) — IC Temperature Characteristics (typ.)

VC

E (s

at)

(V)

IC (A)

0.01 0.1 101

hFE — IC Temperature Characteristics (typ.)

50

h FE

2000

1000

500

100

0 1 2 3

ton• tstg•tf — IC Characteristics (typ.)

0.1

0.5

1

t on•t

stg•t

f (µS

)

IC (A)IC (A)

5

1 5 10 50 100

Safe Operating Area

0.5

0.1

1

5

I C (

A)

VCE (V)

20

10

0 0.5 1.0 1.5

IC — VBE Temperature Characteristics (typ.)

0

6

5

4

3

2

1

I C (

A)

VBE (V)

IB = 1mA

3mA

VCC = 12VIB1 = –IB2 = 30mA

IC/IB = 100

(VCE = 1V)

(VCE = 1V)

Ta = –55ºC25ºC75ºC

125ºC1m

s0.5m

s

10ms

Ta = 125ºC75ºC25ºC

–55ºC

10mA

30mA

20mA

5mA

Ta = 125ºC75ºC25ºC

–55ºCtf

ton

tstg

natural air coolingWithout heatsink

Equivalent Circuit Diagram

5, 6, 7, 8

2, 3, 4

1

(Single pulse)

*1

Page 98: datashet automotriz

0 –1 –2 –3 –4 –5

IC — VCE Characteristics

0

–5

–6

I C (

A)

VCE (V)

–4

–3

–2

–1

0 50 100 150

PT — Ta Derating

0

3

2

1

PT

(W

)

Ta (ºC)

4

0.001 0.01 0.1 1 2

j-a — t Characteristics (Single pulse)

0.3

1

5

10

j-

a (º

C/W

)

t (s)

50

–3 –5 –10 –50 –100

Safe Operating Area (Single pulse)

–0.1

–0.5

–10

–1I C (

A)

VCE (V)

–20

–0.05 –1–0.1 –10

VCE (sat) — IC Temperature Characteristics (typ.)

0

–1

–2

VC

E (s

at)

(V)

IC (A)

–3

IB = –5mA

–10mA

–20mA

–30mA

–50mA

IC/IB = 20

(Ta = 25ºC)

0 –0.5 –1.0 –1.5

IC — VBE Temperature Characteristics (typ.)

0

–5

–4

–3

–2

–1

–6

I C (

A)

VBE (V)

(VCE = –4V)

Without heatsink20ms

10ms

1ms

–200mA –100mA

Ta = 150ºC75ºC25ºC

–55ºC

Ta = 150ºC75ºC

25ºC –55ºC

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO –60Symbol Test Conditions Ratings Unit

ICBO

–12

VCC(V)

12

RL(Ω)

–1

IC(A)

–10

VBB1(V)

5

VBB2(V)

–50

IB1(mA)

50

IB2(mA)

0.4

ton(µs)

1.75

tstg(µs)

0.22

tf(µs)

µAVCB = –60V –10maxIEBO µAVEB = –6V –10max

VCEO VIC = –25mA –60minhFE VCE = –4V, IC = –2A 100min

VCE (sat) VIC = –2A, IB = –0.1A –0.4max

VCEO VV

–60VEBO V –6IC A–6 (pulse –12)IB A –1PT W3 (No Fin)Tj ºC150Tstg ºC–55 to +150

Electrical Characteristics

Typical Switching Characteristics

natural air coolingWithout heatsink

15

16

2

13

14

4

11

12

6

9

10

8

Surface-mount Power Transistor Array SDA03

96

0.05

1

0.5

0.1

5

–0.5 –0.1 –0.5 –1 –5 –10

ton•tstg•tf — IC Characteristics

ton

•tst

g•t

f (µ

sec)

IC (A)

–0.01 –0.1 –1 –10

hFE — IC Temperature Characteristics

30

100

50

500

h FE

IC (A)

1000VCE = –4V

Ta = 150ºC

VCC = 12VIB1 = –IB2 = 50mA

ton

tf

tstg75ºC

25ºC–55ºC

Absolute Maximum Ratings

a) Part No.b) Lot No.

(Unit: mm)

a

b

20.0max

2.54±0.250.89±0.15

8.0±0

.5

6.3±0

.2

0 to

0.15

3.0±0

.2

0.25

9.8±0

.3

1.0±0

.3

19.56±0.2

6.8m

ax

0.75

0.3+0.15–0.05

+0.15–0.05

16

Pin 1 8

9

4.0m

ax

3.6±0

.2

1.4±0

.2

External Dimensions SMD-16A

Equivalent Circuit Diagram

Page 99: datashet automotriz

0 50 100 1500

3

2

1

PT (

W)

Ta (ºC)

4

Without heatsink

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO –60Symbol Test Conditions Ratings Unit

ICBO

–12

VCC(V)

12

RL(Ω)

–1

IC(A)

–10

VBB1(V)

5

VBB2(V)

–50

IB1(mA)

50

IB2(mA)

0.4

ton(µs)

1.75

tstg(µs)

0.22

tf(µs)

µAVCB = –60V –10maxIEBO µAVEB = –6V –10max

VCEO VIC = –25mA –60minhFE VCE = –4V, IC = –2A 100min

VCE (sat) VIC = –2A, IB = –0.1A –0.4max

VCEO VV

–60VEBO V –6IC A–6 (pulse –12)IB A –1PT W2.5 (No Fin)Tj ºC150Tstg ºC–55 to +150

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics

15

16

2

9

10

8

PT — Ta Derating

Surface-mount Power Transistor Array SDA04

97

0 –1 –2 –3 –4 –5

IC — VCE Characteristics

0

–5

–6

I C (

A)

VCE (V)

–4

–3

–2

–1

0.05

1

0.5

0.1

5

–0.5 –0.1 –0.5 –1 –5 –10

ton•tstg•tf — IC Characteristics

t on

•t s

tg•t f

(µs

ec)

IC (A)

–0.01 –0.1 –1 –10

hFE — IC Temperature Characteristics

30

100

50

500

h FE

IC (A)

1000

0.001 0.01 0.1 1 2

j-a — t Characteristics (Single pulse)

0.3

1

5

10

j-

a (º

C/W

)

t (s)

50

–3 –5 –10 –50 –100

Safe Operating Area (Single pulse)

–0.1

–0.5

–10

–1I C (

A)

VCE (V)

–20

–0.05 –1–0.1 –10

VCE (sat) — IC Temperature Characteristics (typ.)

0

–1

–2

VC

E (s

at)

(V)

IC (A)

–3

IB = –5mA

–10mA

–20mA

–30mA

–50mA

IC/IB = 20

VCE = –4V

Ta = 150ºC

(Ta = 25ºC)

VCC = 12VIB1 = –IB2 = 50mA

0 –0.5 –1.0 –1.5

IC — VBE Temperature Characteristics (typ.)

0

–5

–4

–3

–2

–1

–6

I C (

A)

VBE (V)

(VCE = –4V)

20ms

10ms

1ms

–200mA –100mA

Ta = 150ºC75ºC25ºC

–55ºC

Ta = 150ºC75ºC

25ºC –55ºC

ton

tf

tstg75ºC

25ºC–55ºC

natural air coolingWithout heatsink

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

a

b

20.0max

2.54±0.250.89±0.15

8.0±0

.5

6.3±0

.2

0 to

0.15

3.0±0

.2

0.25

9.8±0

.3

1.0±0

.3

19.56±0.2

6.8m

ax

0.75

0.3+0.15–0.05

+0.15–0.05

16

Pin 1 8

9

4.0m

ax

3.6±0

.2

1.4±0

.2

External Dimensions SMD-16A

Page 100: datashet automotriz

14

1 3 4 13 15 16

2

11

5 6 8 9 10 12

7

Surface-mount Power Transistor Array SDC09

98

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 65±5Symbol Test Conditions Ratings Unit

ICBO µAVCB = 60V 10maxIEBO µAVEB = 6V 10max

VCEO VIC = 50mA 60 to 70hFE VCE = 1V, IC = 1A 400 to 1500VCE (sat) VIC = 1.5A, IB = 15mA 0.15maxVFEC VIFEC = 6A 1.5maxEs/b mJL = 10mH, single pulse 80min

VCEO VV

65±5VEBO V 6IC A6 (pulse 10 *)IB A 1PT W2.8Tj ºC150 Tstg ºC–55 to +150

* PW 100µs, Duty 1%

Absolute Maximum Ratings Electrical Characteristics

a) Part No.b) Lot No.

(Unit: mm)

a

b

20.0max

2.54±0.250.89±0.15

8.0±0

.5

6.3±0

.2

0 to

0.15

3.0±0

.2

0.25

9.8±0

.3

1.0±0

.3

19.56±0.2

6.8m

ax

0.75

0.3+0.15–0.05

16

Pin 1 8

9

4.0m

ax

3.6±0

.2

1.4±0

.2

External Dimensions SMD-16A

Equivalent Circuit Diagram

+0.15–0.05

0 50–50 100 1500

3

2

1

PT

(W

)

Ta (ºC)

6

5

50•50 •1.6mmUse substrate

42•31•1.0mmUse substrate

PT — Ta Derating

0 1 2 3 4 5

IC — VCE Characteristics

0

5

6

7

8

I C (

A)

VCE (V)

4

3

2

1

1

0.1

10

0 0.5 1.0 1.5 2.0 2.5 3.0

ton•tstg•tf — IC Characteristics

t on

•t s

tg•t f

(µs

ec)

IC (A)

0.01 0.1 1 10

hFE — IC Temperature Characteristics

1000

100

50

5000

h FE

IC (A)

0.1 1 10 100 10000.05

0.1

1

10

j-a

(ºC

/W)

t (ms)

0.5 1 5 10 50 100

Safe Operating Area (Single pulse)

0.1

0.05

0.5

10

1

5

I C (

A)

VCE (V)

20

0.0001 0.010.001 0.1

VCE (sat) — IC Temperature Characteristics (typ.)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

VC

E (s

at) (

V)

IC (A)

1mA

3mA5mA

10mA

20mA

IC/IB=100

VCE=1V

Ta=150ºC

(Use substrate 42•31•1m)

VCC=12VIB1=–IB2=30mA

0 0.2 0.4 1.21.00.80.6

IC — VBE Temperature Characteristics (typ.)

0

5

4

3

2

1

6

I C (

A)

VBE (V)

(VCE = 4V)

IB= 30mA

Ta=150ºC100ºC75ºC25ºC

–55ºC

Ta=150ºC100ºC 75ºC 25ºC

–55ºC

ton

tf

tstg

75ºC100ºC

25ºC–55ºC

1ms

10ms

0.5ms

Ta=25ºC

j-a — t Characteristics (Single pulse)

Page 101: datashet automotriz

Absolute Maximum Ratings Electrical Characteristics

SymbolRatings

NPN PNPUnit

(Ta=25ºC) (Ta=25ºC)

VCBO 60 –55–55 –6–12 –3

SymbolTest Conditions

NPN PNPRatings Test Conditions Ratings

Unit

ICBO µAVCB = 60V 100maxIEBO mAVEB = 6V 60max

VCEO VIC = 25mA 60minhFE VCE = 1V, IC = 3A 150min VCE (sat) VIC = 6A, IB = 0.3A 0.35max VFEC VIFEC = 10A 2.5max

VCB = –55V –100max VEB = –6V –60max

IC = –25mA –55minVCE = –1V, IC = –3A 80minIC = –6A, IB = –0.3A –0.35max

IFEC = 10A 2.5max

VCEO VV

60VEBO V 6

12IC AIB A 3

PTWW

5 (Tc=25ºC, No Fin)40 (Tc=25ºC)

Tj 150Tstg

ºCºC–55 to +150

84

9

710

36

12

111

2

R1: 500Ω Typ.R2: 500Ω Typ.

R1

R2

5

Power Transistor Array SLA8004

99

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

3.2±0.15 •3.8

11• P2.54±0.1= (27.94)

3.2±0.15

31±0.2

4.8±0.2

1.7±0.1

2.45±0.2

4– (R1)

R-end

4±0.7

24.4±0.2

9.9±0

.2

12.9

±0.2

16±0

.2

5±0.5

(3)

1.2±0.15

0.85

1.45±0.15

31.3±0.2

16.4±0.2

(Root dimension)

(Root dimension)

+0.2–0.1

0.55

1 2 3 4 5 6 7 8 9 10 1211

ab

External Dimensions SLA 12pin (LF817)

+0.2–0.1

IC — VCE Characteristics (typ.)

00

–8

–4

–12

–6

–2

–10

–2–1 –3 –4 –5 –6

–40mA

–60mA

–100mA–150mA

–20mA

–10mA

IB=

–200

mA

VCE (V)

I C (A

)

hFE — IC Characteristics (typ.)

–0.02 –0.1 –1–12

–102

10

300

100

Typ

IC (A)

h FE

(VCE = –1V) (PNP)

(PNP)

hFE — IC Temperature Characteristics (typ.)

–0.02 –0.1 –1–12

–102

10

300

100

125ºC 25ºC–30ºC

(PNP)(VCE = –1V)

IC (A)

h FE

VCE (sat) — IB Characteristics (typ.)

0

–1.4

–1.0

–0.5

–7 –100–10 –1000 –3000

IB (mA)

VC

E (s

at)

(V)

–1A

–3A–6A

–9AIC = –12A

(PNP) (NPN)

IC — VCE Characteristics (typ.)

00

4

2

8

6

12

10

2 4 6

200m

A

IB = 10mA

20mA

40mA

60mA

100mA150mA

VCE (V)

I C (

A)

hFE — IC Temperature Characteristics (typ.)

0.02 0.1 1 101235

50

10

100

400

25ºC

–30ºC

125ºC

(NPN)(VCE = 1V)

IC (A)

h FE

hFE — IC Characteristics (typ.)

0.02 0.1 1 10 1235

50

10

100

400Typ

(NPN)(VCE = 1V)

IC (A)

h FE

VCE (sat) — IB Characteristics (typ.)

0

1.0

1.3

0.5

5 10 100 30001000

IC = 1A

12A

3A6A

9A

IB (mA)

VC

E (s

at)

(V)

(NPN)

Page 102: datashet automotriz

1.0

10.5

±0.3

+0.1–0.05

0.25+0.15–0.05

2.5±0

.2

14.74±0.2

7.5±0

.2

2±0.2

13.04±0.2

1.27±0.25

20

1 10

11

0.4+0.15–0.05

a

b

F1

3

18,19

F2

8

12,13

Surface-mount Power Transistor Array SPF0001

100

(Ta=25ºC) (Ta=25ºC)Absolute Maximum Ratings Electrical Characteristics External Dimensions SPF 20pin

Equivalent Circuit Diagram

Symbol Ratings UnitVCBO 115±10

Symbol Test ConditionsRatings

Unit

ICBO µAVCB = 105VIEBO µAVEB = 6V

VCEO VIC = 50mA 105hFE VCE = 1V, IC = 1A 400VCE (sat) VIC = 1.2A, IB = 12mAVFEC VIFEC = 6AEs/b mJL = 10mH 45

1158000.081.25

10

max typmin

10125

1500 0.121.5

VCEO VV

115±10VEBO V 6IC A ±6 (pulse ±10)

2.5 (Ta = 25ºC)IB A 1PT WTj ºC150 Tstg ºC–55 to +150

*

* Use glass epoxy substrate (FR4) 70mm •100mm•1.6mm

11

(4.7

)

(3.0

5)

20

F1 F2

(2.4)

(11.43)4-( 0.8)

(13.54)

101

a) Part No.b) Lot No.

(Unit: mm)

Fin thickness

0.001 0.01 0.1 1

VCE (sat) — IB Temperature Characteristics (typ.)

0

0.25

0.5

VC

E (s

at) (

V)

IB (A)

(VCE = 1V)

(VCE = 1V)

(IC = 1.2A)

150°C 25°C

–55°C

0.1 1 50.5 6

hFE — IC Temperature Characteristics (typ.)

100

500

50

h FE

IC (A)

10

1000

IC — VBE Temperature Characteristics (typ.)

0

3

2

1

4

5

6

I C (

A)

VBE (V)

0 0.2 1.0 1.20.4 1.40.80.6 0 0.2 1.0 1.20.4 1.40.80.6

IC — VEC Temperature Characteristics (typ.)

0

4

I C (

A)

VEC (V)

2

10

8

6

0.00001 0.0001 0.001 0.01 0.1 101 100

Transient thermal resistance characteristics

0.01

1

100

10

0.1

j-a•

j-f (°

C/W

)

Power time (s)

(82•36•1mm at the time of mounting the recommended pattern of the glass epoxy board)

1 10 100 200

Safe Operating Area (single pulse)

0.1

I C (

A)

VCE (V)

1

20

100.5m

s

2 circuits operate

1 circuits operate

1 circuits operate

2 circuits operate

j-f

j-a1ms

150°C25°C

–55°C

150°C

25°C

–55°C

150°C25°C

–55°C

Page 103: datashet automotriz

0

2

1

3

0 0.5 1 5

VCE (sat) — IC Temperature Characteristics

VC

E (s

at)

(V)

IC (A)

1 10 100 400

VCE (sat) — IB Temperature Characteristics

0

0.25

0.5

VC

E (s

at)

(V)

IB (mA)

IC/IB = 100

(IC = 0.5A)

Ta = 125ºC75ºC25ºC

–40ºC

Ta = 125ºC75ºC25ºC

–40ºC

0 50 1501000

10

PT (

W)

Ta (ºC)

20

Without heatsink

With infinite heatsink

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 35±5Symbol Test Conditions Ratings Unit

ICBO µAVCB = 30V 10maxIEBO mAVEB = 6V 2.7max

VCEO VIC = 25mA 31 to 41hFE VCE = 4V, IC = 0.7A 400min

VCE (sat)VV

IC = 0.5A, IB = 5mAIC = 1A, IB = 5mA

0.2max0.5max

VFEC

RB

RBE

VΩkΩ

IFEC = 2A 2.5max800±1202.0±0.4

Es/b mJL = 10mH, single pulse 50min

VCEO VV

36±5VEBO V 6IC A2 (pulse 3*)

3 (Ta=25ºC)13.5 (Tc=25ºC)

IB mA30

PTWW

Tj ºC150 Tstg ºC–55 to +150

* PW 1ms, Duty 25%

12

VCC(V)

12

RL(Ω)

1

IC(A)

10

VBB1(V)

–5

VBB2(V)

5

IB1(mA)

0

IB2(mA)

1.0

ton(µs)

8.5

tstg(µs)

2.5

tf(µs)

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics

RB

3

24

5

6

7

81RBE

0 1 4 52 63

IC — VCE Characteristics (typ.)

0

2

I C (

A)

VCE (V)

1

3

0.01 0.1 40.5 1

hFE — IC Temperature Characteristics

50

100

h FE

IC (A)

3000

1000

500

0 0.5 1.0 1.5 2.0

ton•tstg•tf — IC Characteristics (typ.)

0.1

0.5

5

1

10

t on

•tst

g•t

f (µ

S)

Ic (A)

50

1 5 10 50

Safe Operating Area (single pulse)

0.5

0.1

1

5

I C (

A)

VCE (V)

(per element)

IB = 1mA

2mA

3mA

VCC = 12VIB = 5mA–IB = 0A

(VCE = 4V)

PT — Ta Derating

10ms

1ms

1 10 100 1000

j-a — t Characteristics

1

5

10

j-

a (º

C/W

)

t (ms)

20Single pulse

30m

A

12mA8mA

5mA

Ta = 125ºC75ºC25ºC

–40ºC

tstg

ton

Without heatsinknatural air cooling

Power Transistor Array STA315A

101

tf

a) Part No.b) Lot No.

(Unit: mm)

a

b

7•2.54=17.78±0.25

(2.54)

20.2±0.2

0.5±0.15

1.0±0.25

C1.5±0.5

4.0±0

.2

1.2±0

.2

0.5±0

.15

1 32 4E B C B

5 6 7 8C B C E

9.0±0

.2

2.3±0

.2

11.3

±0.2

4.7±0

.5

External Dimensions STA3 (LF400A)

Equivalent Circuit Diagram

Page 104: datashet automotriz

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics

0 1 2 3

IC — VCE Characteristics (typ.)

0

2

I C (

A)

VCE (V)

1

3

0

2

1

4

3

0 0.5 1.0 1.5

IC — VBE Temperature Characteristics (typ.)

I C (

A)

VBE (V)

0.01 0.05 0.1 30.5 1

hFE — IC Temperature Characteristics (typ.)

100

h FE

IC (A)

5000

1000

500

0.10.05 0.5 1 5

ton•tstg•tf — IC Characteristics (typ.)

0.3

0.5

5

1

10

t on

•t s

tg•t

f (µ

S)

Ic (A)

20

2 5 10 50

Safe Operating Area (single pulse)

0.5

0.2

1

5

I C (

A)

VCE (V)

10(per element)

0.002 0.01 0.05 0.1 0.4

VCE (sat) — IB Temperature Characteristics

0

0.5

1

VC

E (s

at)

(V)

IB (A)

IB=1mA

2mA

3mA

VCE = 12VIB1 = –IB2 = 5mA

VCE = 4V

(IC = 1A)

(VCE = 4V)

0 50 150100

PT — Ta Derating

0

10

5

PT (

W)

Ta (ºC)

15

Ta = –55ºC25ºC75ºC

125ºC

10ms

1ms

100m

Ta = 125ºC75ºC25ºC

–55ºC

0.1 1 10 100 1000 5000

j-a — t Characteristics

0.1

0.5

1

5

10

j-

a (º

C/W

)

t (ms)

20Single pulse

15m

A10

mA

8mA 6mA5mA

4mA

Ta = 125ºC75ºC25ºC

–55ºC

tstg

tf

ton

Without heatsink (All circuits operate)

With infinite heatsink (All circuits operate)

DC (Tc=25ºC)

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 35±5Symbol Test Conditions Ratings Unit

ICBO µAVCB = 30V 10maxIEBO µAVEB = 6V 10max

VCEO VIC = 25mA 35±5hFE VCE = 4V, IC = 0.5A 500minVCE (sat) VIC = 1A, IB = 5mA 0.5maxEs/b mJL = 10mH, single pulse 150min

VCEO VV

35±5VEBO V 6IC A 3

2.5 (Ta=25ºC) 12 (Tc=25ºC)

IB A 1

PTWW

Tj ºC150 Tstg ºC–55 to +150

12

VCC(V)

12

RL(Ω)

1

IC(A)

10

VBB1(V)

–5

VBB2(V)

5

IB1(mA)

5

IB2(mA)

1.3

ton(µs)

4.7

tstg(µs)

1.2

tf(µs)

2

4

3

7

5

6

Power Transistor Array STA335A

102

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

a

b

7•2.54=17.78±0.25

(2.54)

20.2±0.2

0.5±0.15

1.0±0.25

C1.5±0.5

4.0±0

.2

1.2±0

.2

0.5±0

.15

1 32 4C B E

5 6 7 8E B C

9.0±0

.2

2.3±0

.2

11.3

±0.2

4.7±0

.5

External Dimensions STA3 (LF400A)

Page 105: datashet automotriz

0 1 4 52 63

IC — VCE Characteristics (typ.)

0

2

I C (

A)

VCE (V)

1

3

0.01 0.1 40.5 1

hFE — IC Temperature Characteristics

50

100

h FE

IC (A)

3000

1000

500

0 0.5 1.0 1.5 2.0

ton•tstg•tf — IC Characteristics (typ.)

0.1

0.5

5

1

10

t on

•t s

tg•t

f (µ

S)

Ic (A)

50

1 5 10 50

Safe Operating Area (single pulse)

0.5

0.1

1

5

I C (

A)

VCE (V)

(per element)

IB = 1mA

2mA

3mA

VCC = 12VIB = 5mA–IB = 0A

(VCE = 4V)

0 50 150100

PT — Ta Derating

0

10

PT (

W)

Ta (ºC)

20

10ms

1ms

0

2

1

3

0 0.5 1 5

VCE (sat) — IC Temperature Characteristics

VC

E(s

at)

(V)

IC (A)

1 10 100 400

VCE (sat) — IB Temperature Characteristics

0

0.25

0.5

VC

E(s

at)

(V)

IB (mA)

IC/IB = 100

(IC = 0.5A)

Ta = 125ºC75ºC25ºC

–40ºC

Ta = 125ºC75ºC25ºC

–40ºC

1 10 100 1000

j-a — t Characteristics

1

5

10

j-

a (º

C/W

)

t (ms)

20Single pulse

30m

A

12mA8mA

5mA

Ta = 125ºC75ºC25ºC

–40ºC

tstg

ton

Without heatsink

With infinite heatsink

Without heatsinknatural air cooling

RB

3

24

5

6

7

8

9

101RBE

Power Transistor Array STA415A

103

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 35±5Symbol Test Conditions Ratings Unit

ICBO µAVCB = 30V 10maxIEBO mAVEB = 6V 2.7max

VCEO VIC = 25mA 31 to 41hFE VCE = 4V, IC = 0.7A 400min

VCE (sat)VV

IC = 0.5A, IB = 5mAIC = 1A, IB = 5mA

0.2max0.5max

VFEC

RB

RBE

VΩkΩ

IFEC = 2A 2.5max800±1202.0±0.4

Es/b mJL = 10mH, single pulse 50min

VCEO VV

36±5VEBO V 6IC A2 (pulse 3*)

4 (Ta = 25ºC)18 (Tc = 25ºC)

IB mA30

PTWW

Tj ºC150 Tstg ºC–55 to +150

* PW 1ms, Duty 25%

12

VCC(V)

12

RL(Ω)

1

IC(A)

10

VBB1(V)

–5

VBB2(V)

5

IB1(mA)

0

IB2(mA)

1.0

ton(µs)

8.5

tstg(µs)

2.5

tf(µs)

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics

tf

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

9 • 2.54=22.86±0.05

ab

(2.54)

25.25±0.2

9.0±0

.2

2.3±0

.2

11.3

±0.2

3.5±0

.5

0.5±0.15

0±0.31.0±0.25

C1.5±0.5

4.0±0

.2±

0.5±0

.15

1.2±0

.2

1 32 4E B C B

5 6 7 10C B C E

8 9B C

0±0.3

External Dimensions STA4 (LF412)

Page 106: datashet automotriz

104

Symbol Ratings UnitVCBO 60±10VCEO V

V60±10

VEBO V6

ICP A±10 (Pw 1ms, Du 50%) 3.2 (Ta = 25°C) 18 (Tc = 25°C)

PT W

Tj °C150 Tstg °C–40 to +15

IC A±6

Equivalent Circuit Diagram

9•2.54 = 22.86±0.05

ab

(2.54)

25.25±0.2

9.0±0

.2

2.3±0

.2

11.3

±0.2

3.5±0

.5

0.5±0.15

0±0.31.0±0.25

C1.5±0.5

4.0±0

.2

0.5±0

.15

1.2±0

.2

1 32 4E B C B

5 6 7 10C B C E

8 9B C

0±0.3

(Ta=25ºC) (Ta=25ºC)Absolute Maximum Ratings Electrical Characteristics

Power Transistor Array STA460C

0 2 3 4 5

5

4

3

2

1

0

VCE (V)

IB (mA) VBE (V) PW (ms)

I C (

A)

IC — VCE Characteristics (typ.)

VCE (sat) — IB Temperature Characteristics (typ.)

PT — Ta Derating Safe Operating Area

hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.) VCE (sat) — IC Temperature Characteristics (typ.)

8

9

10

6

7

1

I C (

A)

50 100 150

Ta (ºC)

PT (

W)

20

15

10

5

00–55 5 10 50 100

VCE (V)

0.05

0.1

0.5

1

5

10

20

10.5

IC — VBE Temperature Characteristics (typ.)

0.01 0.1 0.5 1 5 10

IC (A)

hF

E

100

500

5000

1000

30

50

0.05 0.01 0.1 0.5 1 5 10

100

500

5000

1000

30

50

0.05 0.01 0.1 0.5 1 5 100.05

IC (A)

hF

E

0

IC (A)

VC

E (s

at)

(V) 0.5

0.75

0.25

IB=30

mA

20mA

10mA

5mA

3mA

1mA

typTa = 125°C

75°C

–55°C

25°CTa = –55°C

25°C75°C

125°C

IC = 3A

1.5A0.5A

Ta =

125

°C25

°C–5

5°C

75°C

With infinite heatsink

Without heatsink

Silicone grease usedVertical self-excitation

Single pulseWithout heatsinkTa=25°C

0.5ms

1ms

10ms

1 10 50 100 50050

VC

E (s

at)

(V) 0.5

0.75

0.25

0 1.0

3 8

4 9

2 7

1.50.50

1

2

3

4

5

6

I C (

A)

0.1 1 5 10 50 100 500 1000 20000.50.05

j-

a (°

C/W

)

10

5

1

0.5

0.1

20

External Dimensions STA4 (LF412)

Symbol Test ConditionsRatings

Unit

ICBO µAVCB = 50VIEBO µAVEB = 6V

VCEO VIC = 50mA 50hFE VCE = 1V, IC = 1A 700VCE (sat) VIC = 1.5A, IB = 15mAVFEC VIFEC = 6AEs/b mJL = 10mH, single pulse 200

6015000.091.25

10

max typmin

10 70

3000 0.151.5

a) Part No.b) Lot No.

(Unit: mm)

j-a — PW Characteristics(VCE = 1V)

(VCE = 1V) (VCE = 1V) (IC/IB = 100)

Page 107: datashet automotriz

0 1 2 53 4

IC — VCE Characteristics (typ.)

0

5

4

3

2

I C (

A)

VCE (V)

1

7

6

0

0.25

0.75

0.5

0.01 0.1 1 10

VCE (sat) — IC Temperature Characteristics (typ.)

VC

E (s

at)

(V)

IC (A)

0.01 0.1 101

hFE — IC Temperature Characteristics (typ.)

50

h FE

IC (A)

2000

1000

500

100

0 1 2 3

ton•tstg•tf — IC Characteristics

0.1

0.5

1

ton•

tstg

•tf

(µS

)

Ic (A)

5

1 5 10 50 100

Safe Operating Area (single pulse)

0.5

0.1

1

5

I C (

A)

VCE (V)

20

10

0 0.5 1.0 1.5

IC — VBE Temperature Characteristics (typ.)

0

6

5

4

3

2

1

I C (

A)

VBE (V)

IB = 1mA

3mA

VCC = 12VIB1 = –IB2 = 30mA

IC/ IB = 100

(VCE = 1V)

(VCE = 1V)

0 50 1501000

10

15

5

PT (

W)

Ta (ºC)

20

Ta = –55ºC25ºC75ºC

125ºC1m

s0.5m

s

10ms

Ta = 125ºC75ºC25ºC

–55ºC

0.1 1 10 100 2000

j-a — t Characteristics

0.05

0.1

0.5

1

5

j-

a (º

C/W

)

t (ms)

10Single pulse

10mA

30mA

20mA

5mA

Ta = 125ºC75ºC25ºC

–55ºCtf

ton

Without heatsink

With infinite heatsink

tstg

Without heatsinknatural air cooling

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 65±5Symbol Test Conditions Ratings Unit

ICBO µAVCB = 60V 10maxIEBO µAVEB = 6V 10max

VCEO VIC = 50mA 60 to 70hFE VCE = 1V, IC = 1A 400 to 1500VCE (sat) VIC = 1.5A, IB = 15mA 0.15max VFEC VIFEC = 6A 1.5maxEs/b mJL = 10mH, single pulse 80min

VCEO VV

65±5VEBO V 6IC A±6 (pulse ±10)

3.2 (Ta = 25ºC) 18 (Tc = 25ºC)

IB A 1

PTWW

Tj ºC150 Tstg ºC–55 to +150

12

VCC(V)

12

RL(Ω)

1

IC(A)

10

VBB1(V)

–5

VBB2(V)

30

IB1(mA)

–30

IB2(mA)

0.2

ton(µs)

3.9

tstg(µs)

0.2

tf(µs)

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics

3

2

4

8

7

9

PT — Ta Derating

Power Transistor Array STA461C

105

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

9•2.54=22.86±0.05

ab

(2.54)

25.25±0.2

9.0±0

.2

2.3±0

.2

11.3

±0.2

4.7±0

.5

0.5±0.151.0±0.25

C1.5±0.5±

4.0±0

.2

0.5±0

.15

1.2±0

.2

1 32 4B C E

5 6 7 10B

8 9C E

External Dimensions STA4 (LF400B)

Page 108: datashet automotriz

Absolute Maximum Ratings Electrical Characteristics

Typical Switching Characteristics

0 1 2 653 40

5

4

3

2

I C (

A)

VCE (V)

1

8

7

6

0

0.25

0.75

0.5

0.01 0.1 1 5

VC

E (s

at)

(V)

IC (A)

0.01 0.1 1013050

h FE

IC (A)

2000

1000

500

100

0 1 2 30.1

0.5

1

ton•

tstg

•tf

(µS

)

Ic (A)

10

5

(Tc = 25ºC)

0 0.5 1.0 1.50

7

6

5

4

3

2

1

I C (

A)

VBE (V)

IB = 1mA

3mA

VCC = 12VIB1 = –IB2 = 30mA

IC/IB = 100

(VCE = 1V)

(VCE = 4V)

0 50 1501000

10

5

PT (

W)

Ta (ºC)

20

15

Ta = –55ºC25ºC75ºC

150ºC

0

0.25

0.75

0.5

1 10 100 1000

VC

E (s

at)

(V)

IB (mA)

IC = 1.2A

Ta = 150ºC75ºC25ºC

–55ºC

Ta = 150ºC75ºC25ºC

–55ºC

0.0001 10.10.010.001 10 100 10000.1

0.5

1

510

50

j-

a (º

C/W

)

t (s)

100Single pulse

10mA

30mA

20mA

5mA

Ta = 150ºC75ºC25ºC

–55ºC tfton

Without heatsink

With infinite heatsink

tstg

Dual transistor operated

Single transistor operated

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VCBO 115±10Symbol Test Conditions Ratings Unit

ICBO µAVCB = 105V 10maxIEBO µAVEB = 6V 10max

VCEO VIC = 50mA 105 to 125hFE VCE = 1V, IC = 1A 400 to 1500VCE (sat) VIC = 1.2A, IB = 12mA 0.12max VFEC VIFEC = 6A 1.5maxEs/b mJL = 10mH, single pulse 45min

VCEO VV

115±10VEBO V 6IC A ±6 (pulse ±10)

3.2 (Ta=250ºC)18 (Tc=25ºC)

IB A 1

PTWW

Tj ºC150 Tstg ºC–55 to +150

12

VCC(V)

12

RL(Ω)

1

IC(A)

10

VBB1(V)

–5

VBB2(V)

30

IB1(mA)

–30

IB2(mA)

0.2

ton(µs)

5.7

tstg(µs)

0.4

tf(µs)

3

2

4

8

7

9

IC — VCE Characteristics (typ.) VCE (sat) — IC Temperature Characteristics (typ.)

VCE (sat) — IB Temperature Characteristics (typ.)

hFE — IC Temperature Characteristics (typ.) ton•tstg•tf — IC Characteristics

IC — VBE Temperature Characteristics (typ.)

j-a — t Characteristics

PT — Ta Derating

Power Transistor Array STA463C

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

9•2.54=22.86±0.05

ab

(2.54)

25.25±0.2

9.0±0

.2

2.3±0

.2

11.3

±0.2

4.7±0

.5

0.5±0.151.0±0.25

C1.5±0.5

4.0±0

.2

0.5±0

.15

1.2±0

.2

1 32 4B C E

5 6 7 10B

8 9C E

External Dimensions STA4 (LF400B)

106

Page 109: datashet automotriz

107

Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VCBO 65±5Symbol Test Conditions

RatingsUnit

ICBO µAVCB=60VIEBO µAVEB=6V

VCEO VIC=50mA 60hFE VCE=1V, IC=1A 400VCE (sat) VIC=1.5A, IB=15mAVFEC VIFEC=6AEs/b mJL=10mH 80

658000.091.25

10

max typmin

10 70

1500 0.151.5

VCEO VV

65±5VEBO V 6IC A6 (pulse 10)

20 (Tc=25ºC) 4 (Ta=25ºC)

IB A 1

PC W

Tj ºC150 Tstg ºC–55 to +150

3

2

1

5

4

7

6

9

8

10

Power Transistor Array STA464C

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

9•2.54= (22.86)±0.05

ab

(2.54)

25.25±0.2

9.0±0

.2

2.3±0

.2

11.3

±0.2

3.5±0

.5

0.5±0.151.0±0.25

C1.5±0.5

4.0±0

.2

0.5±0

.15

1.2±0

.2

1 32 4B BC BC CE

5 6 7 10B8 9

C E

External Dimensions STA4

(Root dimension)

0 1 2 53 4

IC — VCE Characteristics (typ.)

0

5

4

3

2

I C (

A)

VCE (V)

1

7

6

0

0.25

0.75

0.5

0.01 0.1 1 10

VCE (sat) — IC Temperature Characteristics (typ.)

VC

E (s

at)

(V)

IC (A)

0.01 0.1 101

hFE — IC Temperature Characteristics (typ.)

50

h FE

IC (A)

2000

1000

500

100

0 1 2 3

ton•tstg•tf — IC Characteristics

0.1

0.5

1

ton•

tstg

•tf

(µS

)

Ic (A)

5

1 5 10 50 100

Safe Operating Area (single pulse)

0.5

0.1

1

5

I C (

A)

VCE (V)

20

10

0 0.5 1.0 1.5

IC — VBE Temperature Characteristics (typ.)

0

6

5

4

3

2

1

I C (

A)

VBE (V)

IB = 1mA

3mA

VCC = 12VIB1 = –IB2 = 30mA

IC/IB = 100

(VCE = 1V)

(VCE = 1V)

0 50 1501000

10

15

5

PT (

W)

Ta (ºC)

20

Ta= –55ºC25ºC75ºC

125ºC1m

s0.5m

s

10ms

Ta = 125ºC75ºC25ºC

–55ºC

10mA

30mA

20mA

5mA

Ta = 125ºC75ºC25ºC

–55ºCtf

ton

Without heatsink

With infinite heatsink

tstg

Without heatsinknatural air cooling

PT — Ta Derating

Page 110: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 60Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA 60

min typ max

IGSS µAµA

VGS = ±20V ±10

IDSS

V

VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 42RDS (ON) mΩ

V

nsV

VGS = 10V, ID = 35A

CossCiss VDS = 10V

VGS = 10Vf = 1.0MHzCrss

trr

VSD ISD = 50AISD = 25A, di/dt = 50A/µs

5.0 6.0

pFpFpF

940014001100

0.9110

1.5

VGSS VV

20 70140

ID AID (pulse) A

130PD

Tch

W400EAS mJ150

Tstg ºCºC

–55 to +150

Absolute Maximum Ratings

Features ON resistance 0.0060Ω max. Built-in G-S bidirectional Zener diode Trench MOS structure

Applications Power steering motor Various motors Replaces mechanical relays

Electrical Characteristics

MOS FET 2SK3710 (under development)

External Dimensions TO220S

0.4±0.1

(5)

(5.4)

(1.4

)

(1.3

)

(1.5

)

(0.4

5)

4.44±0.2

1.3±0.2

2.6±0.2

9.1±0

.3

2.54±0.1

1.4±0

.2

2.54±0.1

10.2±0.3

1.2±0.2

0.86+0.2–0.1

10.5

+0.

3–0

.5

3+

0.3

–0.5

0.1+0.2–0.1

1 2 3Details of the back (S=2/1)

108

(Unit : mm)

Page 111: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 60Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA 60

min typ max

IGSS µAµA

VGS = +20V ±10IDSS

V

VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 42RDS (ON) mΩ

V

nsV

VGS = 10V, ID = 35A

CossCiss VDS = 10V

VGS = 10Vf = 1.0MHzCrss

trr

VSD ISD = 50AISD = 25A, di/dt = 50A/µs

5.0 6.0

pFpFpF

0.970

78001250 990

1.2

VGSS VV

20 70140

ID AID (pulse) A

130PD

Tch

WTo be definedEAS mJ

150Tstg ºC

ºC–55 to +150

Absolute Maximum Ratings Electrical Characteristics

MOS FET 2SK3711

109

External Dimensions TO-3PFeatures ON resistance 0.006Ω max. Built-in G-S bidirectional Zener diode Trench MOS structure

Applications Power steering motor Various motors Replaces mechanical relays

* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω* Contact your sales rep for the details of warranty at Tch = 175°C

(1) (2) (3)

15.8±0.2

1. Gate2. Drain3. Source

1.4

2

3

15.6±0.4

13.64.8±0.2

2.0±0.1

3.2±0.1

5.0±0

.2

9.6 1.8

20.0

min

4.0

max

19.9

±0.3

4.0

2.0

1.05+0.2–0.1 0.65

+0.2–0.1

5.45±0.1 5.45±0.1

0 1

10

0

VDS (V)

I D (

A)

ID — VDS Characteristics (typ.)

RDS (ON) — ID Characteristics (typ.)

Capacitance — VDS Characteristics IDR — VSD Characteristics

ID — VGS Characteristics (typ.) VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics (typ.)

40

50

60

70

80

20

30

0.5

0 20 30 40 50 7060

2.0

1.0

0

ID (A)

RD

S (O

N)

(mΩ

)

I DR

(A

)

6.0

7.0

3.0

5.0

4.0

10

20 30 5040

VDS (V)

Cap

acita

nce

(pF

)

50000

1000

10000

100100 0.4 0.6 0.8 1.0 1.41.2

VSD (V)

0

10

20

30

40

50

70

60

0.20

Safe Operating Area (single pulse)

I C (

A)

1 10 100

VDS (V)

0.1

1

10

100

500

0.1

PD — TC Characteristics

PD

(W)

50 100 150

Tc (ºC)

0

20

40

100

80

60

120

140

0

RDS (ON) — TC Characteristics (typ.)

0 50 100 150

4.0

2.0

0

Tc (ºC)

RD

S (O

N)

(mΩ

) 10.0

12.0

6.0

8.0

–50–60 0.01 0.1 1 10010

0.1

0.01

Pw (sec)

10

1

0.0010.0001

0 4 6 8

10

0

VGS (V)

I D (

A)

40

50

80

70

60

20

30

2 0 10 15 20

0.2

0

VGS (V)

VD

S (

V) 0.6

0.8

1.0

0.4

5 1 10 701

ID (A)

Re

(yfs

) (S

)

100

500

10

10V8V6V

VGS = 5V

(Ta = 25ºC) (VDS = 10V)

(Ta = 25ºC)

Tc = 150°C100°C

50°C25°C0°C

–40°C

ID = 70A

35A

(VDS = 10V)

Tc = –55°C25°C

150°C

Ciss

Coss

Crss

VGS = 0Vf = 1MHz

(Ta = 25ºC) (With infinite heatsink)(Ta = 25ºC)

ID (pulse) max 500µs (1shot)

1ms (1shot)

10ms (1shot)

RDS (ON) L

IMITED

Tc = 150°C25°C

–55°C

VGS = 10VTa = 25ºC

VGS = 10VID = 35A j-c — Pw Characteristics

j-c

(ºC

/W)

a) Part No.b) Lot No.

(Unit : mm)

a

b

Page 112: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 60Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA 60

min typ max

IGSS µAµA

VGS = ±20V ±10IDSS

V

VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 21RDS (ON) mΩ

V

nsV

VGS = 10V, ID = 40A

CossCiss VDS = 10V

VGS = 10Vf = 1.0MHzCrss

trr

VSD ISD = 50AISD = 25A, di/dt = 50A/µs

4.0 5.0

pFpFpF

1060016001300

0.9To be defined

1.5

VGSS VV

20 80160

ID AID (pulse) A

60PD

Tch*

WTo be definedEAS mJ

150Tstg ºC

ºC–55 to +150

Absolute Maximum Ratings Electrical Characteristics

MOS FET 2SK3724 (under development)

External Dimensions TO220S

0.4±0.1

(5)

(5.4)

(1.4

)

(1.3

)

(1.5

)

(0.4

5)

4.44±0.2

1.3±0.2

2.6±0.2

9.1±0

.3

2.54±0.1

1.4±0

.2

2.54±0.1

10.2±0.3

1.2±0.2

0.86+0.2–0.1

10.5

+0.

3–0

.5

3+

0.3

–0.5

0.1+0.2–0.1

1 2 3Details of the back (S=2/1)

Features ON resistance 0.005Ω max. Built-in G-S bidirectional Zener diode Trench MOS structure

Applications Power steering motor Various motors Replaces mechanical relays

* Contact your sales rep for the details of warranty at Tch = 175°C

110

(Unit : mm)

Page 113: datashet automotriz

Absolute Maximum Ratings Electrical Characteristics(Ta=25ºC) (Ta=25ºC)

MOS FET 2SK3800

External Dimensions TO220S

0.4±0.1

(5)

(5.4)

(1.4

)

(1.3

)

(1.5

)

(0.4

5)

4.44±0.2

1.3±0.2

2.6±0.2

9.1±0

.3

2.54±0.1

1.4±0

.2

2.54±0.1

10.2±0.3

1.2±0.2

0.86+0.2–0.1

10.5

+0.

3–0

.5

3+

0.3

–0.5

0.1+0.2–0.1

1 2 3

111

Symbol Test ConditionsRatings

Unit

V(BR) DSS ID = 100µA, VGS = 0V 40

min typ max

IGSS µAµA

VGS = ±15V ±10IDSS

V

VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 4.02.0

30RDS (ON)

Re (yfs)

VS

nsV

VGS = 10V, ID = 35AVDS = 10V, ID = 35A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

trr

VSD ISD = 50A, VGS = 0VISD = 25A, di/dt = 50A/µs

5.0503.0

6.0

td (on) nsID = 35A 100tr nsVDD = 20V, RG = 22Ω 100td (off) nsRL = 0.57Ω, VGS = 10V 300tf ns130

Rth (ch-c) ºC/W1.56Rth (ch-a) ºC/W62.5

pFpFpF

51001200860

0.9110

1.2

Symbol Ratings UnitVDSS 40VGSS V

V±20±70

±140 ID AID (pulse)*1 A

80 (Tc=25ºC)PD

EAS*2

W400

Tstg ºC

mJTch 150 ºC

–40 to +150* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω

0 2.01.5

10

0

VDS (V)

I D (

A)

ID — VDS Characteristics (typ.)

RDS (ON) — ID Characteristics (typ.)

Capacitance — VDS Characteristics (typ.) IDR — VSD Characteristics (typ.)

ID — VGS Characteristics (typ.) VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics (typ.)

40

50

60

70

20

30

1.00.5

0 20 30 40 50 7060

2.0

1.0

0

ID (A)

RD

S (O

N)

(mΩ

)

I DR

(A

)

6.0

7.0

3.0

5.0

4.0

10

20 30 5040

VDS (V)

Cap

acita

nce

(pF

)

50000

1000

10000

100100 0.4 0.6 0.8 1.0 1.41.2

VSD (V)

0

10

20

30

40

50

70

60

0.20

Safe Operating Area (single pulse)

I C (

A)

1 10 100

VDS (V)

0.1

1

10

100

500

0.1

PD — TC Characteristics

PD

(W)

40 806020 100 120 140 160

Tc (ºC)

0

20

10

40

30

70

60

50

80

90

0

RDS (ON) — TC Characteristics (typ.) Dynamic I/O Characteristics (typ.)

0 50 100 150

4.0

2.0

0

Tc (ºC)

RD

S (O

N)

(mΩ

)

10.0

12.0

6.0

8.0

–50–60 0.01 0.1 1 10010

0.1

0.01

t (s)

10

1

0.0001 0.0010.00001

0 3.02.0 5.04.0 7.06.0

10

0

VGS (V)

I D (

A) 40

50

70

60

20

30

1.0 0 10 15 20

0.2

0

VGS (V)

VD

S (

V) 0.6

0.8

1.0

0.4

5 1 10 701

ID (A)

Re

(yfs

) (S

)

100

500

10

10V5.5V5.0V

VGS = 4.5V

(Ta = 25ºC)(VDS = 10V)

(Ta = 25ºC)

Ta = 150°C25°C

–55°C

(ID = 35A)

ID = 70A

35A

(VDS = 10V)

Tc = –55°C25°C

150°C

Ciss

Coss

Crss

VGS = 0Vf = 1MHz

(Ta = 25ºC)

RDS (ON) L

IMITED

100 150

10

0

Qg (nC)

30

20

5

0

15

10

500

V DS

(V

)

V GS

(V

)

Ta = 150°C25°C

–55°C

VDD = 8V12V14V16V24V

VDS

VGS

PT =1ms

PT =100µsP

T =10ms

PT =10µs

Details of the back (S=2/1)

j-c — t Characteristics (Single pulse)

VGS = 10VTa = 25ºC

VGS = 10VID = 35A

j-c

C/W

)

(Unit : mm)

Page 114: datashet automotriz

112

MOS FET 2SK3801

External Dimensions TO-3PAbsolute Maximum Ratings Electrical Characteristics(Ta=25ºC) (Ta=25ºC)

Symbol Test ConditionsRatings

Unit

V(BR) DSS ID = 100µA, VGS = 0V 40

min typ max

IGSS µAµA

VGS = ±15V ±10IDSS

V

VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 4.02.0

30RDS (ON)

Re (yfs)

VS

nsV

VGS = 10V, ID = 35AVDS = 10V, ID = 35A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

trr

VSD ISD = 50A, VGS = 0VISD = 25A, di/dt = 50A/µs

5.0503.0

6.0

td (on) nsID = 35A 100tr nsVDD = 20V, RG = 22Ω 100td (off) nsRL = 0.57Ω, VGS = 10V 300tf ns130

Rth (ch-c) °C/W1.25Rth (ch-a) °C/W35.71

pFpFpF

51001200860

0.9100

1.5

Symbol Ratings UnitVDSS 40VGSS V

V±20±70

±140ID AID (pulse)*1 A

100 (Tc=25ºC)PD

EAS*1

W400

Tstg ºC

mJTch 150 ºC

–40 to +150* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω

(1) (2) (3)

15.8±0.2

1. Gate2. Drain3. Source

1.4

2

3

15.6±0.4

13.64.8±0.2

2.0±0.1

3.2±0.1

5.0±0

.2

9.6 1.8

20.0

min

4.0

max

19.9

±0.3

4.0

2.0

1.05+0.2–0.1 0.65

+0.2–0.1

5.45±0.1 5.45±0.1

0 2.01.5

10

0

VDS (V)

I D (

A)

ID — VDS Characteristics (typ.)

RDS (ON) — ID Characteristics (typ.)

Capacitance — VDS Characteristics (typ.) IDR — VSD Characteristics (typ.)

ID — VGS Characteristics (typ.) VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics (typ.)

40

50

60

70

20

30

1.00.5

0 20 30 40 50 7060

2.0

1.0

0

ID (A)

RD

S (O

N)

(mΩ

)

I DR

(A

)

6.0

7.0

3.0

5.0

4.0

10

20 30 5040

VDS (V)

Cap

acita

nce

(pF

)

50000

1000

10000

100100 0.4 0.6 0.8 1.0 1.41.2

VSD (V)

0

10

20

30

40

50

70

60

0.20

Safe Operating Area (single pulse)

I C (

A)

1 10 100

VDS (V)

0.1

1

10

100

500

0.1

PD — TC Characteristics

PD

(W)

40 806020 100 120 140 160

Tc (ºC)

0

20

40

60

100

80

120

0

RDS (ON) — TC Characteristics (typ.)

0 50 100 150

4.0

2.0

0

Tc (ºC)

RD

S (O

N)

(mΩ

)

10.0

6.0

8.0

–50–60 0.01 0.1 1 10010

0.1

0.01

Pw (s)

10

1

0.0001 0.0010.00001

0 3.02.0 5.04.0 7.06.0

10

0

VGS (V)

I D (

A) 40

50

70

60

20

30

1.0 0 10 15 20

0.2

0

VGS (V)

VD

S (

V) 0.6

0.8

1.0

0.4

5 1 10 701

ID (A)

Re

(yfs

) (S

) 100

1000

10

10V5.5V5.0V

VGS = 4.5V

(Ta = 25ºC)(VDS = 10V)

(Ta = 25ºC)

Ta = 150°C25°C

–55°C

(ID = 35A)

ID = 70A

35A

(VDS = 10V)

Tc = –55°C25°C

150°C

Ciss

Coss

Crss

VGS = 0Vf = 1MHz

(Ta = 25ºC)

RDS (ON) L

IMITED

Dynamic I/O Characteristics (typ.)

100 150

Qg (nC)500

V DS

(V

)

Ta = 150°C25°C

–55°C

VDD = 8V12V14V16V24V

VDS

VGS

PT =1ms

PT =100µsP

T =10ms

PT =10µs

10

0

30

20

5

0

15

10V G

S (

V)

a) Part No.b) Lot No.

(Unit : mm)

a

b

j-c — Pw Characteristics (Single pulse)

VGS = 10VTa = 25ºC

VGS = 10VID = 35A

j-c

C/W

)

Page 115: datashet automotriz

113

Absolute Maximum Ratings Electrical Characteristics(Ta=25ºC) (Ta=25ºC)

MOS FET 2SK3803 (under development)

External Dimensions TO220S

Symbol Test ConditionsRatings

Unit

V(BR) DSS ID = 100µA, VGS = 0V 40

min typ max

IGSS µAµA

VGS = ±15V ±10IDSS

V

VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 4.02.0

50RDS (ON)

Re (yfs)

VS

nsV

VGS = 10V, ID = 42AVDS = 10V, ID = 42A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

trr

VSD ISD = 50A, VGS = 0VISD = 25A, di/dt = 50A/µs

2.1 3.0

td (on) nsID = 42A 90tr nsVDD = 20V, RG = 22Ω 230td (off) nsVGS = 10V 490tf ns760

pFpFpF

1050024001900

0.8590

1.2

Symbol Ratings UnitVDSS 40VGSS V

V±20±85

±170 ID AID (pulse)*1 A

100 (Tc=25ºC)PD

EAS*2

W730

Tstg ºC

mJTch 150 ºC

–55 to +150

10.2±0.3

1.27±0.2

2.54±0.52.54±0.5

1.2±0.2

1.6

10.0

8.6±0

.3(1

.4)

–0.5

+0.

3

3.0

–0.5

+0.

3

0.86 –0.1+0.2

4.44±0.2

1.3±0.2

0.4±0.1

(1.5

) 0.1–0.1+0.2

* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω

a) Part No.b) Lot No.

(Unit : mm)

a

b

Page 116: datashet automotriz

114

Symbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VDSS 60Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA, VGS = 0V 60

min typ max

IGSS µAµA

VGS = ±20V ±10IDSS

S

V

VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 3.02.52.0Re (yfs) VDS = 10V, ID = 42A 30RDS (ON) mΩ

V

nsnsnsnsVns

VGS = 10V, ID = 42A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

td (on) ID = 42AVDD 16VRG = 22ΩVGS = 10V

tr

trr

td (off)

tf

ISD = 50A, di/dt = 100A/µSVSD ISD = 50A, VGS = 0V

4.0 4.7pFpFpF

11500 15001100602537065

700.87 1.5

VGSS VV

±20±85

±280 ID AID (pulse)*1 A

150PD

EAS*2

W280

Tstg ºC

mJTch 150 ºC

–55 to +150

Absolute Maximum Ratings Electrical Characteristics

MOS FET 2SK3851

External Dimensions TO-3P

0 0.8 1.2 1.6 2.0

10

0

VDS (V)

I D (

A)

60

80

70

90

30

20

40

50

0.4

0 70 80 900

ID (A)

RD

S (O

N)

(mΩ

)

I DR

(A

)

1.0

5.0

7.0

6.0

8.0

5.0

4.0

3.0

2.0

1.0

0

6.0

4.0

3.0

2.0

20 30 40 50 6010

30 5040 60

VDS (V)

Cap

acita

nce

(pF

)

10000

1000

50000

50010 200 0.2 0.4 0.80.6 1.0 1.2 1.4

VSD (V)

30

20

10

0

70

60

50

40

80

90

0

PD

(W)

50 75 100 125 150

Tc (ºC)

20

0

40

140

120

100

80

60

160

250

ID — VDS Characteristics

RDS (ON) — ID Characteristics

Capacitance — VDS Characteristics IDR — VSD Characteristics

ID — VGS Characteristics VDS — VGS Characteristics Re (yfs) — ID Characteristics

PD — TC Characteristics

RDS (ON) — TC Characteristics

0 50 100 150

Tc (ºC)

RD

S (O

N)

(mΩ

)

–50–100 0.01 0.1 1 10

0.1

0.01

t (s)

10

1

0.0010.0001

0 32 4 5 6

VGS (V)

I D (

A)

80

100

40

20

0

60

1 0 8 10 12 14 16 18

VGS (V)

VD

S (

V)

1.0

0.6

0.8

0.4

0.2

04 62 1 10 50 100

10

1

ID (A)

Re

(yfs

) (S

)

100

500

5

10V

4.5V

VGS = 4.0V

(Ta = 25ºC) (Ta = 25ºC)(VDS = 10V) (VDS = 10V)

Ta = 150°C25°C

–55°C

–55°C25°C

150°C

(Ta = 25ºC)Ta = 25°C

VGS = 0Vf = 1MHz

Ciss

CossCrss

ID = 85A

ID = 42A

Ta = 150°C25°C

–55°C

(1) (2) (3)

15.8±0.2

1. Gate2. Drain3. Source

1.4

2

3

15.6±0.4

13.64.8±0.2

2.0±0.1

3.2±0.1

5.0±0

.2

9.6 1.8

20.0

min

4.0

max

19.9

±0.3

4.0

2.0

1.05+0.2–0.1 0.65

+0.2–0.1

5.45±0.1 5.45±0.1

* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped

a) Part No.b) Lot No.

(Unit : mm)

a

b

VGS = 10VTa = 25ºC VGS = 10V

ID = 25A

j-c — t Characteristics (Single pulse)

j-c

(ºC

/W)

Page 117: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 40Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA, VGS = 0V 40

min typ max

IGSS µA

µA

VGS = +20V +10VGS = –10V –5

IDSS

S

V

VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.3 1.3Re (yfs) VDS = 10V, ID = 25A 20.0RDS (ON) mΩ

V

nsnsnsnsV

VGS = 10V, ID = 25A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

td (on) ID = 25AVDD = 12VRL = 0.48ΩVGS = 10V

tr

td (off)

tf

VSD ISD = 50A, VGS = 0V

7 9pFpFpF

28001400600 206002501001.0 1.5

VGSS VV

+20, –10±60

±180 ID AID (pulse)* A

60 (Tc=25ºC)PD

TchW

150Tstg ºC

ºC–55 to +150

* PW 100µs, duty 1%

Absolute Maximum Ratings Electrical Characteristics

MOS FET FKV460S

115

a) Part No.b) Lot No.

(Unit : mm)

External Dimensions TO220S

a

b

10.2±0.3

1.27±0.2

2.54±0.52.54±0.5

1.2±0.2

1.6

10.0

8.6±0

.3(1

.4)

–0.5

+0.

3

–0.5

+0.

33.

0

0.86

4.44±0.2

1.3±0.2

0.4±0.1

(1.5

)

0.1–0.1+0.2

–0.1+0.2

0 2 3 4 5

10

0

VDS (V)

I D (

A)

ID — VDS Characteristics (typ.)

RDS (ON) — ID Characteristics

Capacitance — VDS Characteristics IDR — VSD Characteristics

ID — VGS Characteristics (typ.) VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics

40

50

60

20

30

1

0 20 30 40 50 60

4.0

2.0

0

ID (A)

RD

S (O

N)

(mΩ

)

I DR

(A

)

12

14

6.0

10

8.0

10

20 30 35

VDS (V)

Cap

acita

nce

(pF

)

10000

1000

100100 0.4 0.6 0.8 1.0 1.2

VSD (V)

0

10

20

30

40

50

60

0.20

Safe Operating Area (single pulse)

I C (

A)

1 10 50

VDS (V)

0.1

1

10

100200

0.1

PD — TC Characteristics

PD

(W)

50 75 100 125 150

Tc (ºC)

0

10

20

50

40

30

60

70

250

RDS (ON) — TC Characteristics

0 50 100 150

4.0

2.0

0

Tc (ºC)

RD

S (O

N)

(mΩ

)

12

14

6.0

10

8.0

–50–60 0.01 0.1 1 10

0.1

0.01

t (s)

50

10

1

0.0010.0001

0 2 3 4

10

0

VGS (V)

I D (

A) 40

50

70

60

20

30

1 0 10 15 20

0.2

0

VGS (V)

VD

S (

V) 0.6

0.8

1.0

0.4

5 1 10 605

50

ID (A)

Re

(yfs

) (S

) 100

500

10

5

3.5V

10V5.0V4.0V

VGS = 3.0V

(Ta = 25ºC) (Ta = 25ºC)

(Ta = 25ºC) (Ta = 25ºC)

(VDS = 10V)

Ta = 150ºC25ºC

–55ºC

FR4 (70 •100 • 1.6mm)Use substrate

ID = 60A

25A

10A

(VDS = 10V)

–55ºC25ºC

150ºC

Ciss

Coss

Crss

VGS = 0Vf = 1MHz

5V

10V

VGS = 10V

(Ta = 25ºC)

ID(pulse) max PT=1msP

T=10msRDS(ON) L

IMITED

VGS = 10VTa = 25ºC VGS = 10V

ID = 25A

j-c • j-a — t Characteristics (Single pulse)

j-c

j-a

(ºC

/W) j-a

j-c

Page 118: datashet automotriz

Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VDSS 60Symbol Test Conditions

RatingsUnit

V(BR)DSS ID=100µA, VGS=0V 60

min typ max

IGSS µA

µA

VGS=+20VVGS=–10V

+10– 5

IDSS

S

V

VDS=60V, VGS=0V 100VTH VDS=10V, ID=250µA 2.51.0Re (yfs) VDS=10V, ID=25A 20RDS(ON) mΩ

V

nsnsnsnsV

VGS=10V, ID=25A

CossCiss VDS=10V

f=1.0MHzVGS=0VCrss

td(on) ID=25AVDD=12VRL=0.48ΩVGS=10V

tr

td(off)

tf

VSD ISD=50A, VGS=0V

11 14pFpFpF

2500900150 504004003001.0 1.5

VGSS VV

+20, –10±60

±180 ID AID(pulse) A

60(Tc=25ºC)PD

TchW

150Tstg ºC

ºC–40 to +150

MOS FET FKV660S

116

External Dimensions TO220S

a

b

10.2±0.3

1.27±0.2

2.54±0.52.54±0.5

1.2±0.2

1.6

10.0

8.6±0

.3(1

.4)

–0.5

+0.

3

3.0

0.86 –0.1+0.2

4.44±0.2

1.3±0.2

0.4±0.1

(1.5

)

0.1–0.1+0.2

a) Part No.b) Lot No.

(Unit : mm)

PW 100µs, duty 1%

–0.5

+0.

3

0 4 6 8 1210

20

0

VDS (V)

I D (

A)

ID — VDS Characteristics

RDS (ON) — ID Characteristics

IDR — VSD Characteristics

ID — VGS Characteristics VDS — VGS Characteristics Re (yfs) — ID Characteristics

120

140

160

180

80

60

40

100

2

100 200

ID (A)

RD

S (O

N)

(Ω)

I DR

(A

)

101

0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD (V)

0

20

40

60

80

100

120

140

160

180

0.20

Safe Operating Area (single pulse)

I D (

A)

1 10 100

VDS (V)

0.1

1

10

100

500

0.1

RDS (ON) — TC Characteristics Capacitance — VDS Characteristics

0 50 100 150

0.010

0.005

0

Tc (ºC)

RD

S (O

N)

(Ω)

0.030

0.015

0.025

0.020

0.010

0.005

0

0.030

0.015

0.025

0.020

–50–60

0 2 3 6540.001

VGS (V)

I D (

A)

1

10

1000

100

0.01

0.1

1 0 10 15 20

0.2

0

VGS (V)

VD

S (

V)

0.6

0.8

1.0

1.2

1.4

0.4

5 1 10 2001001

ID (A)

Re

(yfs

) (S

) 100

1000

10

10V6V

VGS = 3.5V

4V

4.5V

(Ta = 25ºC) (Ta = 25ºC)

(Ta = 25ºC)

(VDS = 10V)

Ta = 150°C100°C

50°C25°C

0°C–55°C

(ID = 25A)

ID = 60A

25A

10A

(VDS = 10V)

–55°C25°C

150°C

(Ta = 25ºC)

ID (pulse) max

PT =1ms

PT =10msRDS (O

N) LIM

ITED

20 30 40 50

VDS (V)

Cap

acita

nce

(pF

)

10000

1000

100100

(Ta = 25ºC)

Ciss

Coss

Crss

VGS = 0Vf = 1MHz

VGS = 10V

VGS = 4V

VGS = 10V

VGS = 4V

VGS = 0VTa = 25ºC

Page 119: datashet automotriz

Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VDSS 52±5 Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 1mA, VGS = 0V 47 52 57

min typ max

IGSS µAµA

VGS = ±20V ±1.0

IDSS

S

V

VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.51.81.0Re (yfs) VDS = 10V, ID = 1.0A 1.0

RDS (ON)ΩΩ

V

µsµsµsµsV

VGS = 10V, ID = 1.0AVGS = 4V, ID = 1.0A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

td (on) ID = 1AVDD 12VRL = 12ΩVGS = 5V

RG1 = 50Ω, RG2 = 10kΩ

tr

td (off)

tf

VSD ISD = 1A, VGS = 0V

0.2 0.25 0.25 0.3

pFpFpF

200120 20

2.07.43.34.21.0 1.5

VGSS VV

±20 ±3±6

ID AID (pulse) *1 A

3 (Tc=25ºC, 4 circuits operate)PT

EAS *2

Tch

W

150 40

Tstg ºCºCmJ

–55 to +150

*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω

2

1

15 16

4

3

13 14

6

5

11 12

8

7

9 10

Surface-mount MOS FET Array SDK06

117

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

a

b

20.0max

2.54±0.250.89±0.15

8.0±0

.5

6.3±0

.2

0 to

0.15

3.0±0

.2

0.25

9.8±0

.3

1.0±0

.3

19.56±0.2

6.8m

ax

0.75

0.3

16

Pin 1 8

9

4.0m

ax

3.6±0

.2

1.4±0

.2

External Dimensions SMD-16A

+0.15–0.05

+0.15–0.05

0 2 4 10 126 8 14

ID — VDS Characteristics

0

5

4

I D (

A)

VDS (V)

3

2

1

6

0.01

1

0.1

20

10

0 1 2 3 4 5 6

ID — VGS Characteristics

I D (

A)

VGS (V)

0 1 2 3 64 5

RDS (ON) — ID Characteristics

0

0.2R

DS

(ON

) (Ω

)

ID (A)

0.8

0.6

0.4

–50 0 50 100 150

RDS (ON) — TC Characteristics

0

0.1

0.3

0.2

0.4

RD

S (O

N)

(Ω)

Tc (ºC)

0.5

0.5 1 5 10 50

Safe Operating Area (single pulse)

0.5

0.1

1

5

I D (

A)

VDS (V)

10(Tc = 25ºC)

0.05 0.1 0.5 1 6

Re (yfs) — ID Characteristics

0.2

0.5

1

5

10

Re

(yfs

) (S

)

ID (A)

VGS = 3V

VGS = 4V

VGS = 5VVGS = 10V

VGS = 4Vtyp.

ID = 1A

VGS = 10Vtyp.

VDS = 10V

VDS = 10V

VGS = 4V

0 0.40.2 0.6 0.8 1.41.21.0

IDR — VSD Characteristics

0

8

6

4

2

I DR (

A)

VSD (V)

10

Ta = –55ºC25ºC75ºC

150ºC

10ms

1ms

100µs

ID (pulse) max

RDS (on)

LIM

ITED

Ta = –55ºC25ºC

150ºC

Ta = 150ºC75ºC25ºC

–55ºC

25ºC

Ta = 150ºC

75ºC

–55ºC

Page 120: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 50Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA, VGS = 0V 50

min typ max

IGSS nAµA

VGS = ±20V ±100

IDSS

S

V

VDS = 50V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 2.3

13.0 1.89.0

1.3Re (yfs) VDS = 10V, ID = 4.0A 5.0

RDS (ON)ΩΩ

V

nsnsnsnsV

VGS = 10V, ID = 4.0AVGS = 4V, ID = 4.0A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

td (on) ID = 4AVDD 12V

RL = 3ΩVGS = 5VRG = 50Ω

tr

td (off)

tf

VSD ISD = 6A, VGS = 0V

0.07 0.08 0.09 0.1

pFpFpF

700300 90

50 80 60 401.0 1.5

VGSS VV

±20 ±4.5 ±9

ID AID (pulse) *1 A

4 (Tc=25ºC, 4 circuits operate)PT

EAS *2

Tch

W

150 80

Tstg ºCºCmJ

–55 to +150

*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω

Absolute Maximum Ratings Electrical Characteristics

Surface-mount MOS FET Array SDK08

118

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

a

b

20.0max

2.54±0.250.89±0.15

8.0±0

.5

6.3±0

.2

0 to

0.15

3.0±0

.2

0.25

9.8±0

.3

1.0±0

.3

19.56±0.2

6.8m

ax

0.75

0.3

16

Pin 1 8

9

4.0m

ax

3.6±0

.2

1.4±0

.2

External Dimensions SMD-16A

+0.15–0.05

+0.15–0.05

td (on)

0 159 12

2

0

VDS (V)

I D (

A)

ID — VDS Characteristics (typ.)

RDS (ON) — ID Characteristics

Capacitance — VDS Characteristics ISD — VSD Characteristics (typ.)

ID — VGS Characteristics VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics

8

10

12

18

16

14

4

6

63

0 2 4 8 12106 0 2 4 8 12106

0.10

0.05

0

ID (A)

RD

S (O

N)

(Ω)

I SD

(A

)

0.15

0.20

0.10

0.05

0

0.15

0.20

0.10

0.05

0

0.15

0.20

10 100

VDS (V)

Cap

acita

nce

(pF

)

5000

100

10

1000

510.1 0.6 0.9 1.51.2

VSD (V)

0

1

2

3

4

5

8

7

6

0.30

PT — Ta Characteristics

PT

(W

)

50 100 150

Ta (ºC)

0

1

2

3

4

0

S/W TimeW — ID Characteristics

0.1 0.5 1 105

10

5

ID (A)

500

100

0 32 540.001

VGS (V)

I D (

A)

0.1

1

2010

0.01

1 0 4 6 108

0.2

0

VGS (V)

VD

S (

V)

0.6

0.8

1.4

1.0

1.2

0.4

2 0.05 10.1 100.1

ID (A)

Re

(yfs

) (S

) 10

100

1VGS = 3V

VGS = 4V

VGS = 10V

(ID = 4A)(VDS = 10V)

(VGS = 10V)

(Ta = 25ºC)

(Ta = 25ºC)

Ta = 150°C75°C25°C

0°C–55°C

S/W

Tim

e (n

s)

(VDS = 10V)

Ta = 150°C25°C

–55°C

Ciss

Coss

Crss

VGS = 0Vf = 1MHz

Ta = 150°C75°C25°C

0°C–55°C

Ta = 150°C75°C25°C0°C

–55°C

4 circuits operate3 circuits operate2 circuits operate1 circuits operate

RDS (ON) — TC Characteristics (typ.)

0 50 100 150

Tc (ºC)

RD

S (O

N)

(Ω)

–50–60

(ID = 4A)

Ta = 150°C75°C25°C0°C

–55°C

RDS (ON) — ID Characteristics

ID (A)

RD

S (O

N)

(Ω)

(VGS = 4V)

Ta = 150°C

75°C

25°C0°C

–55°C

VGS = 4V

VGS = 10V

tr

t f

td (off)

(Ta = 25ºC)

VDD = 12V constantRGS = 50ΩVGS = 5V

1

15 16

2

3

13 14

4

5

11 12

6

7

9 10

8

(single pulse)

Page 121: datashet automotriz

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 120Symbol Test Conditions

RatingsUnit

V(BR) DSS ID=100µA, VGS=0V 120

min typ max

IGSS µAµA

VGS=±20V ±5

IDSS

S

V

VDS=120V, VGS=0V 100VTH VDS=10V, ID=250µA 2.01.0Re (yfs) VDS=10V, ID=4A 5.0

RDS (ON) Ω

V

nsnsnsnsV

VGS=10V, ID=4AVGS=4V, ID=4A

CossCiss VDS=10V

f=1.0MHzVGS=0VCrss

td (on) ID=4AVDD=12VRL=3ΩVGS=5VRG=50Ω

tr

td (off)

tf

VSD ISD=6A, VGS=0V

0.15 0.2 0.2 0.25

pFpFpF

400130 30

1003002502001.0 1.5

VGSS VV

±20 ±6±10

ID AID (pulse)*1 A

3 (Tc=25ºC, 4 circuits operate)PT

Tch

W

150Tstg ºC

ºC–55 to +150

80EAS *2 mJ

Absolute Maximum Ratings Electrical Characteristics

1

15 16

2

3

13 14

4

5

11 12

6

7

9 10

8

Surface-mount MOS FET Array SDK09

119

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

a

b

20.0max

2.54±0.250.89±0.15

8.0±0

.5

6.3±0

.2

0 to 0

.153.

0±0.2

0.25

9.8±0

.3

1.0±0

.3

19.56±0.2

6.8m

ax

0.75

0.3+0.15–0.05

+0.15–0.05

16

Pin 1 8

9

4.0m

ax

3.6±0

.2

1.4±0

.2

External Dimensions SMD-16A

0 1 2 53 4 6

ID — VDS Characteristics

0

12

I D (

A)

VDS (V)

8

4

16

0

8

6

4

2

10

0 1.0 2.0 3.0 4.0

ID — VGS Characteristics

I D (

A)

VGS (V)

0 2 4 86 10

RDS (ON) — ID Characteristics

0

0.10

0.05R

DS

(ON

) (Ω

)

ID (A)

0.30

0.25

0.20

0.15

–50 0 50 100 150

RDS (ON) — TC Characteristics

0

0.10

0.30

0.20

0.40

RD

S (O

N)

(Ω)

Tc (ºC)

0.45

0 10 20 30 40 50

Capacitance — VDS Characteristics

10

50

100

500

Cap

acita

nce

(pF

)

VDS (V)

1000

1 5 10 50 100 200

Safe Operating Area (single pulse)

0.5

0.1

10

1

5

I D (

A)

VDS (V)

20(Ta = 25ºC)

0.05 0.1 0.5 1 5 10

Re (yfs) — ID Characteristics

0.1

0.5

1

5

10

50

Re

(yfs

) (S

)

ID (A)

VGS=4.5V

VGS=10V

VGS=4VID=4A

VGS=10V

VGS=0Vf=1MHz

Coss

Ciss

Crss

VDS=10V

0 0.40.2 0.6 0.8 1.21.0

IDR — VSD Characteristics

0

5

4

3

2

1

I DR

(A

)

VSD (V)

6

VGS=4V

VGS=10VTa=–55ºC25ºC75ºC

150ºC

100ms

10ms

1ms

100µs

ID (pulse) max

ID (DC) max

RDS (on) LIMITED

Ta=–55ºC25ºC75ºC

150ºC

Ta=150ºC75ºC25ºC

–55ºC

VGS=0V

*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω

Page 122: datashet automotriz

0 1 2 3 4 5 6

ID — VDS Characteristics

0

4

8

I D (

A)

VDS (V)

6

2

10

0 1 2 3 4

ID — VGS Characteristics

0

4

6

10

I D (

A)

VGS (V)

8

2

12

0.1 1 10 20

RDS (ON) — ID Characteristics

0

0.05

RD

S (o

n)

(Ω)

ID (A)

0.1

–50 0 50 100 150

RDS (ON) — TC Characteristics

0.02

0.06

0.10

RD

S (O

N)

(Ω)

Tc (ºC)

0.12

1 5 10 50

Capacitance — VDS Characteristics

50

500

100

1000

Cap

acita

nce

(pF

)

VDS (V)

2000

0.5 1 5 10 10050

Safe Operating Area (single pulse)

0.5

10

1

5

I D (

A)

VDS (V)

50(Ta = 25ºC)

0.4 1 5 10 20

Re (yfs) — ID Characteristics

2

5

10

Re

(yfs

) (S

)

ID (A)

30

4V5V

10V

VGS = 3V

VGS = 4V VDS = 10V

VGS = 10V

VGS = 0Vf = 1MHz

Coss

Ciss

Crss

VDS = 10V

0 0.4 0.8 1.2

IDR — VSD Characteristics

0.1

5

10

I DR (

A)

VSD (V)

1

0.5

20

VGS = 0V

VGS = 4V

VGS = 10VTa = 150ºC75ºC25ºC

–55ºC

100ms

10ms

1ms

0.5ms

ID (pulse) max

ID (DC) max

RDS (on

) LIM

ITED

Assum

ed VGS =

4V lin

e

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 60Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA, VGS = 0V 60

min typ max

IGSS µAµA

VGS = ±20V ±100

IDSS

S

V

VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 2.01.5

12.0 1.0

Re (yfs) VDS = 10V, ID = 8A 6.0RDS (ON) Ω

V

nsnsnsnsV

VGS = 4V, ID = 8A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

td (on) ID = 8AVDD 30VRL = 3.75ΩVGS = 5VRG = 50Ω

tr

td (off)

tf

VSD ISD = 10A, VGS = 0V

0.07 0.08pFpFpF

1100 500170

502502501801.0 1.5

VGSS

j-c

VISO

VV

±20±12±48

ID AID (pulse)*1 A

5 (Ta=25ºC, 4 circuits operate)

60 (Tc=25ºC,4 circuits operate)PT

EAS*2

Tch

WW

Vrms150

2502.08

(Fin to lead terminal) AC1000

Tstg ºCºC

ºC/WmJ

–55 to +150

*1 PW 250µs, duty 1%*2 VDD = 30V, L = 10mH, unclamped, RG = 50Ω

Absolute Maximum Ratings Electrical Characteristics

1

3

2

4

6

5

8

7

9

11

10

12

MOS FET Array SLA5027

120

1 2 3

11•P2.54±0.7=27.94±1.0

31.5 max

0.851.2±0.15

31.0±0.2

24.4±0.2

16.4±0.2

3.2±0.15

0.55 2.2±0.7

1.7±0.14.8±0.2

1.45±0.15

Pin 1 12

4 5 6 7 8 9 10 11 12

8.5

max

9.5

min

(10.

4)

9.9±0

.2

13.0

±0.2

16.0

±0.2

2.7

a) Part No.b) Lot No.

(Unit: mm)

External Dimensions SLA 12pin (LF800)

Equivalent Circuit Diagram

ab

+0.2–0.1

+0.2–0.1

Ellipse 3.2±0.15 • 3.8

Lead

pla

te th

ickn

ess

resi

ns 0

.8m

ax

Page 123: datashet automotriz

MOS FET Array SLA5098 (under development)

121

Symbol Ratings Unit

(Ta=25ºC) (Ta=25ºC)

VDSS 40Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA, VGS = 0V 40

min typ max

IGSS µAµA

VGS = ±15V ±10IDSS

S

V

VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.51.5Re (yfs) VDS = 10V, ID = 10A

VGS = 10V, ID = 10A10

RDS (ON) mΩ

V

nsnsnsnsV

ns

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

td (on) ID = 10AVDD = 14VRL = 1.4ΩVGS = 10VRG = 50Ω

tr

trr

td (off)

tf

VSD ISD = 10A, VGS = 0V

ISD = 10A, VGS = 0Vdi/dt = 100A/µs

17pFpFpF

145042026040402001000.85

45

1.2

VGSS VV

±202040

ID AID (pulse)* A

5PT

Tch

W

W

150Tstg ºC

ºC–55 to +150

IAS To be defined A

EAS To be defined mJ

Electrical CharacteristicsAbsolute Maximum Ratings

5

2

4

1

3

Equivalent Circuit Diagram

External Dimensions STA4 (LF412)

10

7

9

6

8

15

12

14

11

13

1 2 3

14•P2.03±0.4= 28.42±0.8

31.5 max

0.651.2±0.15

31.0±0.2

24.4±0.2

16.4±0.2

3.2±0.1

0.55 2.2±0.7

1.7±0.14.8±0.2

1.15

Pin 1 15

4 5 6 7 8 9 10 11 12 13 14 15

8.5

max

9.5

min

(10.

4)

9.9±0

.2

13.0

±0.2

16.0

±0.2

2.7

+0.2–0.1

+0.2–0.1

+0.2–0.1

* PW 100µs, duty 1%

a) Part No.b) Lot No.

(Unit: mm)

ab

Without heatsink, Ta=25°C, (All circuits operate ) Tc=25°C, (All circuits operate)90

Ellipse 3.2±0.1 • 3.8

Lead

pla

te th

ickn

ess

resi

ns 0

.8m

ax

Page 124: datashet automotriz

Absolute Maximum Ratings Electrical Characteristics

0 5 10 15 20

ID — VDS Characteristics

0

5

6

I D (

A)

VDS (V)

4

3

2

1

7

0

5

6

4

3

2

1

7

0 2 4 6 8 10

ID — VGS Characteristics

I D (

A)

VGS (V)

0 1 2 3 4 5 6 7

RDS (ON) — ID Characteristics

0

1.0

0.5RD

S (O

N)

(Ω)

ID (A)

1.5

–50 0 50 100 150

RDS (ON) — TC Characteristics

0

1.0

0.5

2.0

1.5

RD

S (O

N)

(Ω)

Tc (ºC)

2.5

0 10 20 30 40 50

Capacitance — VDS Characteristics

20

50

100

500

Cap

acita

nce

(pF

)

VDS (V)

1000

3 5 10 50 100 500

Safe Operating Area (single pulse)

0.5

0.1

0.05

10

1

5

I D (

A)

VDS (V)

50(Ta = 25ºC)

0.05 0.1 0.5 1 7

Re (yfs) — ID Characteristics

2

5

10

50

Re

(yfs

) (S

)

ID (A)

100

5.5V

5V

VGS = 4.5V

ID = 3.5AVDS = 20VVGS = 10V

VGS = 0Vf = 1MHz

Coss

Ciss

Crss

VDS = 20V

0 0.40.2 0.6 0.8 1.0

IDR — VSD Characteristics

0

5

4

3

2

1

6

I DR

(A

)

VSD (V)

7

VGS = 0V

VGS = 10V

Ta = –55ºC25ºC

150ºC

100ms

10ms

1ms

100µs

ID (pulse) max

ID (DC) max

RDS (on) L

IMITED

10V

Ta = –55ºC25ºC

150ºC

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 450Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA, VGS = 0V 450

min typ max

IGSS nAµA

VGS = ±30V ±100

IDSS

S

V

VDS = 450V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 4.0

5.02.0

Re (yfs) VDS = 20V, ID = 3.5A 3.5RDS (ON) Ω

V

nsnsnsnsV

VGS = 10V, ID = 3.5A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

td (on) ID = 3.5AVDD 200V

RL = 57ΩVGS = 10VRG = 50Ω

tr

td (off)

tf

VSD ISD = 7A, VGS = 0V

0.84 1.1pFpFpF

720150 65

25 40 70 501.0 1.5

VGSS

j-a

j-c

IAS

VV

±30±7

±28ID AID (pulse) *1 A

A

4 (Ta=25ºC, All circuits operate, No Fin)

35 (Tc=25ºC, All circuits operate, ∞ Fin)PT

EAS *2

Tch

WW

150

130 7

31.2

3.57

Tstg ºCºC

ºC/W

ºC/W

mJ

–55 to +150

*1 PW 100µs, duty 1%*2 VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50Ω

MOS FET Array SMA5113

122

Equivalent Circuit Diagram

Junction - Ambientare, Ta=25ºC, All circuits operate

Junction - Case, Ta=25ºC, All circuits operate

0.85

31.5 max

a

b

31.0±0.24.0±0.2

2.5±0.2

1.46±0.15

1.21±0.15

11•P2.54±0.1=27.94

10.2

±0.2

2.4

(10.

4)

0.55 1.2±0.1

30º

1 2 3 4 5 6 7 8 9 10 11 12a) Part No.b) Lot No.

(Unit: mm)

External Dimensions SMA (LF1000)

+0.2–0.1 +0.2

–0.1

1

3

2

4

6

5

8

7

9

11

10

12

(Including both-side resin burr)

Page 125: datashet automotriz

0 1 2 53 4 6

ID — VDS Characteristics

0

12

I D (

A)

VDS (V)

8

4

16

0

8

6

4

2

10

0 1.0 2.0 3.0 4.0

ID — VGS Characteristics

I D (

A)

VGS (V)

0 2 4 86 10

RDS (ON) — ID Characteristics

0

0.10

0.05R

DS

(ON

) (Ω

)

ID (A)

0.30

0.25

0.20

0.15

–50 0 50 100 150

RDS (ON) — TC Characteristics

0

0.10

0.30

0.20

0.40

RD

S (O

N)

(Ω)

Tc (ºC)

0.45

0 10 20 30 40 50

Capacitance — VDS Characteristics

10

50

100

500

Cap

acita

nce

(pF

)

VDS (V)

1000

1 5 10 50 100 200

Safe Operating Area (single pulse)

0.5

0.1

10

1

5

I D (

A)

VDS (V)

20(Ta = 25ºC)

0.05 0.1 0.5 1 5 10

Re (yfs) — ID Characteristics

0.1

0.5

1

5

10

50

Re

(yfs

) (S

)

ID (A)

VGS = 4.5V

VGS = 10V

VGS = 4VID = 4A

VGS = 10V

VGS = 0Vf = 1MHz

Coss

Ciss

Crss

VDS = 10V

0 0.40.2 0.6 0.8 1.21.0

IDR — VSD Characteristics

0

5

4

3

2

1

I DR

(A

)

VSD (V)

6

VGS = 4V

VGS = 10VTa = –55ºC25ºC75ºC

150ºC

100ms

10ms

1ms

100µs

ID (pulse) max

ID (DC) max

RDS (on) LIMITED

Ta = –55ºC25ºC75ºC

150ºC

Ta = 150ºC75ºC25ºC

–55ºC

VGS = 0V

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 120Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 100µA, VGS = 0V 120

min typ max

IGSS µAµA

VGS = ±20V ±5

IDSS

S

V

VDS = 120V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.01.0Re (yfs) VDS = 10V, ID = 4.0A

VGS = 10V, ID = 4.0A5.0

RDS (ON)ΩΩ

V

nsnsnsnsV

VGS = 4V, ID = 4.0A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

td (on) ID = 4AVDD 12V

RL = 3ΩVGS = 5VRG = 50Ω

tr

td (off)

tf

VSD ISD = 6A, VGS = 0V

0.150.2

0.2 0.25

pFpFpF

400130 301003002502001.0 1.5

VGSS VV

±20 ±6±10

ID AID (pulse)*1 A

4 (Ta = 25ºC)20 (Tc = 25ºC)

PT

EAS *2

Tch

WW

150 80

Tstg ºCºCmJ

–55 to +150

*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω

Electrical CharacteristicsAbsolute Maximum Ratings

2

1

3

4

5

6

7

8

9

10

MOS FET Array STA508A

123

Equivalent Circuit Diagram

a) Part No.b) Lot No.

(Unit: mm)

9•2.54=22.86±0.05

ab

(2.54)

25.25±0.2

9.0±0

.2

2.3±0

.2

11.3

±0.2

3.5±0

.5

0.5±0.15

0±0.31.0±0.25

C1.5±0.5

4.0±0

.2

0.5±0

.15

1.2±0

.2

1 32 4S G D G

5 6 7 10D G D S

8 9G D

0±0.3

External Dimensions STA4 (LF412)

Page 126: datashet automotriz

0 2 4 10 126 8 14

ID — VDS Characteristics

0

5

4

I D (

A)

VDS (V)

3

2

1

6

0.01

1

0.1

20

10

0 1 2 3 4 5 6

ID — VGS Characteristics

I D (

A)

VGS (V)

0 1 2 3 64 5

RDS (ON) — ID Characteristics

0

0.2R

DS

(ON

) (Ω

)

ID (A)

0.8

0.6

0.4

–50 0 50 100 150

RDS (ON) — TC Characteristics

0

0.1

0.3

0.2

0.4

RD

S (O

N)

(Ω)

Tc (ºC)

0.5

0.5 1 5 10 50

Safe Operating Area (single pulse)

0.5

0.1

1

5

I D (

A)

VDS (V)

10(Tc = 25ºC)

0.05 0.1 0.5 1 6

Re (yfs) — ID Characteristics

0.2

0.5

1

5

10

Re

(yfs

) (S

)

ID (A)

VGS = 3V

VGS = 4V

VGS = 5VVGS = 10V

VGS = 4Vtyp.

ID = 1A

VGS = 10Vtyp.

VDS = 10V

VDS = 10V

VGS = 4V

0 0.40.2 0.6 0.8 1.41.21.0

IDR — VSD Characteristics

0

8

6

4

2

I DR (

A)

VSD (V)

10

Ta = –55ºC25ºC75ºC

150ºC

10ms

1ms

100µs

ID (pulse) max

RDS (on)

LIM

ITED

Ta = –55ºC25ºC

150ºC

Ta = 150ºC75ºC25ºC

–55ºC

25ºC

Ta = 150ºC

75ºC

–55ºC

Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)

VDSS 52±5Symbol Test Conditions

RatingsUnit

V(BR) DSS ID = 1mA, VGS = 0V 47 52 57

min typ max

IGSS µAµA

VGS = ±20V ±1.0

IDSS

S

V

VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.51.0Re (yfs) VDS = 10V, ID = 1.0A

VGS = 10V, ID = 1.0A1.0

RDS (ON)ΩΩ

V

µsµsµsµsV

VGS = 4V, ID = 1.0A

CossCiss VDS = 10V

f = 1.0MHzVGS = 0VCrss

td (on) ID = 1AVDD 12VRL = 12ΩVGS = 5V

RG1 = 50Ω, RG2 = 10Ω

tr

td (off)

tf

VSD ISD = 6A, VGS = 0V

0.2 0.25

0.250.3

pFpFpF

200120 202.07.43.34.21.0 1.5

VGSS VV

±20 ±3 ±6

ID AID (pulse) *1 A

4 (Ta = 25ºC)20 (Tc = 25ºC)

PT

EAS *2

Tch

WW

150 40

Tstg ºCºCmJ

–55 to +150

*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω

Electrical CharacteristicsAbsolute Maximum Ratings

2

1

3

4

5

6

7

8

9

10

MOS FET Array STA509A

124

Equivalent Circuit Diagram

External Dimensions STA

a) Part No.b) Lot No.

(Unit: mm)

9•2.54=22.86±0.05

ab

(2.54)

25.25±0.2

9.0±0

.2

2.3±0

.2

11.3

±0.2

3.5±0

.5

0.5±0.15

0±0.31.0±0.25

C1.5±0.5

4.0±0

.2

0.5±0

.15

1.2±0

.2

1 32 4S G D G

5 6 7 10D G D S

8 9G D

0±0.3

Page 127: datashet automotriz

Measurement circuit

Current waveform (1cycle)

External Dimensions (unit: mm)

Thyristor with built-in reverse diode for HID lamp ignition TFC561D

Features

Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=430A Critical rate-of-rise of on-state current: di/dt=1200A/µs Gate trigger current: IGT=20mA max With built-in reverse diode

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Repetitive peak off-state voltage

Repetitive surge peak on-state current

Critical rate-of-rise of on-state current

Average gate power loss

Peak reverse gate voltage

Diode repetitive peak surge forward current

Junction temperature

VDRM

ITRM

di/dt

IFGM

PGM

PG (AV)

VRGM

IFRM

Tj

Tstg

V

A

Tj=–40 to +125°C,

RGK=1kΩ

A/µs

W

W

V

A

ºC

600

430

1200

Peak forward gate current

Peak gate power loss

A2.0

5.0

0.5

5

240

–40 to +125

Storage temperature

VD 430V, 100kcycle,

Wp=1.3µs, Ta=125°C

f 50Hz, duty 10%

f 50Hz, duty 10%

f 50Hz

VD 430V, 100kcycle,

Wp=1.3µs, Ta=125°C

ºC–40 to +125

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Tj=25ºC)

VTM

VD=6V, RL=10Ω

VD=6V, RL=10Ω

IT=10A

10.0

1.4 V

20

1.5

mA

VVGT

IGT

VD=480V, Tj=125ºC

RG–K=1kΩ, Tj=25ºC

VVGD

mAIH

VD=VDRM, RG–K=1kΩ, Tj=25ºC

VD=VDRM, RG–K=1kΩ, Tj=125ºC

Junction to case

IF=10A

100

1

1.4

4.0

µAIDRM (1)

Off-state current (2)

Off-state current (1)

Holding current

Gate non-trigger voltage

Gate trigger current

Gate trigger voltage

On-state voltage

mAIDRM (2)

0.1

Thermal resistance ºC/WRth

2

Diode forward voltage VVF

(1). Cathode(K)(2). Anode (A)(3). Gate (G)

10.2±0.3

1.2±0.2

1.27±0.22.59±0.2

1.3±0.2

4.44±0.2

0.86

0.76±0.1

0.4±0.12.54±0.5

11.0

±0.5

2.54±0.5

8.6±0

.3

11.3

±0.5

(1.4

)

+0.2–0.1

10.0

+0.

3–0

.5

(1) (2) (3)

VD G1

G2

C

L

Sample

(Ta=25ºC)

100A

/div

2µs/div

*

*

*

Weight: Approx. 1.5g

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.

125

Page 128: datashet automotriz

126

Current waveform (1cycle)

External Dimensions (unit: mm)

Thyristor with built-in reverse diode for HID lamp ignition TFC562D

Features

Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=600A Critical rate-of-rise of on-state current: di/dt=1600A/µs Gate trigger current: IGT=20mA max With built-in reverse diode

Parameter Symbol Unit ConditionsRatings

Absolute Maximum Ratings

Repetitive peak off-state voltage

Repetitive surge peak on-state current

Critical rate-of-rise of on-state current

Average gate power loss

Peak reverse gate voltage

Diode repetitive peak surge forward current

Junction temperature

V

A

Tj = –40 to +125°C,

RGK = 1kΩ

A/µs

W

W

V

A

ºC

600

600

1600

Peak forward gate current

Peak gate power loss

A2

5

0.5

5

460

–40 to +125

Storage temperature

Ta = 100°C, VD 430V, WP = 1.05µs, IG = 70mA, dig/dt = 0.5A/µs, 100kcycle*, See the examples of current waveforms

f 50Hz, duty 10%

f 50Hz, duty 10%

f 50Hz

Ta = 100°C, VD 430V, WP = 1.05µs, 100kcycle*, See the examples of current waveforms

ºC–40 to +125

Electrical Characteristics

Parameter Symbolmin typ max

Unit ConditionsRatings

(Tj=25ºC)

VTM

VD = 6V, RL = 10Ω

VD = 6V, RL = 10Ω

IT = 10A

5

1.4 V

20

1.5

mA

VVGT

IGT (1)

VD = 480V, Tj = 125°C

RG–K = 1kΩ, Tj = 25°C

VVGD

mAIH

VD = VDRM, RG–K = 1kΩ, Tj = 25°C

VD = VDRM, RG–K = 1kΩ, Tj = 125°C

Junction to case, With infinite heatsink

IF = 10A

10

1

1.4

4.0

µAIDRM (1)

Off-state current (2)

Off-state current (1)

Holding current

Gate non-trigger voltage

Gate trigger current

Gate trigger voltage

On-state voltage

mAIDRM (2)

0.1

Thermal resistance °C/WRth

2

Diode forward voltage VVF

1.34+0.2–0.1

10.5

+0.

3–

0.5

+0.2–0.10.86

0.76±0.1

4.44±0.2

1.3±0.2

2.6±0.2

11.0

±0.5

9.1±

0.3

(2.6

9)

(0.4

5)

(1.4

)( 1

.8)

2.54±0.1

10.2±0.3

2.54±0.1 0.4±0.1

(Root dimension)

(Root dimension)

(Root dimension)

2 31

(5)

a

b

* A single cycle operation consists of a continuous impression of 50 rounds with period T = 10ms followed by a rest time for the junction temperature of the element to cool down to 100°C (= Ta). Repeat this cycle operation.

(Ta=100ºC)

H: 2µs/div

V: 2

00A

/div

VDRM

ITRM

di/dt

IFGM

PGM

PG (AV)

VRGM

IFRM

Tj

Tstg

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.

Page 129: datashet automotriz

Absolute maximum ratings Electrical Characteristics

Part No.

200 20 –40 to +150200 1.10 20 0.25 1

200 35 –40 to +150350 1.10 35 0.25

SG-9CNSSG-9CNR

200 30 –40 to +150300 1.10 30 0.252

— —SG-9LCNSSG-9LCNRSG-9LLCNSSG-9LLCNR

200 30 –40 to +150300 1.2 100 0.25 — —SG-10LSSG-10LR

150 35 –40 to +150350 1.05 100 0.253

— —SG-10LXSSG-10LXR

200 40 –40 to +150400 1.05 100 0.25 — —SG-10LLSSG-10LLR

150 45 –40 to +150450 1.0 100 0.25 — —SG-10LLXSSG-10LLXR

R type S type

Polarity

S type R type

Polarity

Fig. 1 Fig. 2

Rectifier Diodes for Alternators

127

External Dimensions (unit: mm)

Fig. 3 Fig. 4

17 20 –40 to +200200 1.10 20 0.05 123±3 10SG-9CZSSG-9CZR

17 35 –40 to +200350 1.10 35 0.05 223±3 10SG-9LLCZSSG-9LLCZR

17 30 –40 to +150300 1.2 100 0.053

23±3 10SG-10LZ23SSG-10LZ23R

17 40 –40 to +150400 1.05 100 0.05 23±3 10SG-10LLZ23SSG-10LLZ23R

16 35 –40 to +200350 1.15 100 0.05 422±3 100SG-14LXZSSG-14LXZR

(ºC)

TstgTj

Normal Type

Zener Type

12.84

1.26

9.0

11.5

S :

20.5

R :

28.5

10m

ax8m

ax4.

74.

00.

3

5.0

10.7

10.0

13.5

24.0

2

(4°)

(1.5

)

(2)

(5.8

)

(45°)(30°)

0.41.01.4

4.40.6

2.0

2.5R1.2

3.04.25.0

3.6

VRM

(V)IF (AV)

(A)IFSM

(A)

VF(V)

max

IR(mA)max

VZ

(V)

Fig. No.

IF (A)

IF (A)

Condition ConditionIZ (mA)

Absolute maximum ratings Electrical Characteristics

Part No.(ºC)

TstgTjVRM

(V)IF (AV)

(A)IFSM

(A)

VF(V)

max

IR(mA)max

VZ

(V)

Fig. No.Condition Condition

IZ (mA)

3.1±0.1

S: 1

9.0±1

.0

R: 2

3.0±1

.0

8.4±0.2

7.0±0.2

1.5

5±0.4

11.

2

S type R type

Polarity

S type R type

Polarity

3.1±0.1 S: 1

9.0±1

.0

R: 2

3.0±1

.0

8.4±0.2

9.5±0.2

1.5

(R0.5)

5±0.4 1

1.2

Page 130: datashet automotriz

Absolute Maximum Ratings Electrical Characteristics (Ta=25ºC)

VRM

(kV)

IF (AV)(mA)50 Hz

half-wavesignal

average

IRSM(mA)

Peak value ofsingle shot

triangular wavewith 100µshalf-power bandwidth

IRSM(A)

Peak valueof 50 Hz half-wave

signal

VF(V)

max

Vz(kV)

IR=100µA

IR(µA)

VR=VRMmax

ConditionIF (mA)

Fig.No.

Tj Tstg

(ºC)

SHV-05J 2.5 30 30 3 –40 to +150 5 1010 2.6 to 5.0

SHV-01JN 0.5 30 30 3 1 0.55 to 1.0

1

2

SHV-06JN 3.0 30 10 3 6 3.2 to 6.0 2

27min

5±0.2

0.5

C0.5

C0.5

2.5±0.2

27min 27min 6.5

0.5 2.5±0.2

27min

Part No.

High-voltage Diodes for Igniters

128

External Dimensions (unit: mm)

Fig. 1 (SHV-05J) Fig. 2 (SHV-06JN)

Page 131: datashet automotriz

129

Power Zener Diode

–40 to +150

–55 to +150

–55 to +150

–55 to +150

–55 to +150

–55 to +150

–40 to +150

–55 to +175

–55 to +175

–55 to +175

–55 to +175

Absolute Maximum Ratings Electrical Characteristics

PR

(W)VDC

(V)IZSM

(A) ConditionIZ (mA)

IRVR=VDC

(µA)max

TstgTj VZ (V)1mA

instantaneouscurrent

Part No. Remarks

Surface-mount type

Axial type

Surface-mount type

(ºC)

SFPZ-68

SJPZ-K28 *

SJPZ-E18 *

SJPZ-E27 *

SJPZ-E33 *

SJPZ-E36 *

PZ628

SZ-10N27

SZ-10N40 *

SZ-10NN27

SZ-10NN40 *

50(5ms)

85(500µs)

1500(5ms)

20

20

13

20

25

27

20

22

22

22

22

2

2

65*1

70*1

40*1

90*1

55*1

25.0 to 31.0

25.0 to 31.0

16.8 to 19.1

25.1 to 28.9

31.0 to 35.0

34.0 to 38.0

25.0 to 31.0

24 to 30

36 to 40

24 to 30

36 to 40

1

1

1

1

1

1

10

10

10

10

10

10

10

10

10

10

10

50

10

10

10

10

1

2

2

2

2

2

3

4

4

4

4

P(W)

1

1

1

1

1

1

5

5

5

6

6

(Ta=25ºC)

Fig. 1

Fig. 3 Fig. 3

Fig. 2

External Dimensions (unit: mm)

*1: IZSM conditions

IRSM

IRSM

2

0 10ms Time

8.5±0.5

5±0.3

2±0.3

2.7±0.3

3±0.57.2±0.5

10±0.3

10±0

.3

13.5

±0.3

15.5

±0.5 (9

.75)

2.0±

0.5

* under development

+0.4–0.15.0

+0.

1–0

.05

0.05

1.3±0.4 1.5±0.2

2.15

±0.2

2.6±

0.2

4.5±0.2

1.3±0.4

Fig.No.

56.0

1.3 ±0.05

±0.2

±0.7

±0.0

2

10.0

C2

10.0

Cathode marking

4.5 ±0.2

±0.2

±0.2

±0.2±0.4±0.4

±0.2

0.05

2.0min1.35 1.35

5.1+0.4–0.1

2.6

2.05

1.1

1.5

Page 132: datashet automotriz

130

VRM

(V)IF (AV)

(A)

IFSM(A)

Peak valueof 50 Hz half-wave

signal

Peak valueof 50 Hz half-wave

signal

Peak valueof 50 Hz half-wave

signal

VF

(V)max

Tstg(ºC)

Rth (j-l)

(°C/W)Weight

(g)Tj

(ºC)

IR(µA)

VR=VRMmax

Part No.ConditionIF (A)

SFPM-52

SFPM-62

SFPM-54

SFPM-64

200

400

0.9

1.0

0.9

1.0

30

45

30

45

1.0

0.98

1.0

0.98

1.0

1.0

1.0

1.0

ConditionTa (°C)

100

100

100

100

10

10

10

10

IR (H)(mA)

PackageVR=VRM

max

50

50

50

50

–40 to +150

Surface-mountRectifier Diodes

General-purpose Diodes

20

20

20

20

1

1

1

1

0.072

0.072

0.072

0.072

VRM

(V)IF (AV)

(A)

IFSM(A) VF

(V)max

Tstg(ºC)

Rth (j-l)

(°C/W)Weight

(g)Tj

(ºC)

IR(µA)

VR=VRMmax

Part No.ConditionIF (A)

SFPJ-53 *SFPJ-63

SFPJ-73

SFPB-54

SFPB-64

SFPE-64

SFPB-74

SFPB-56

SFPW-56

SFPB-66

SFPB-76

SFPB-59

SFPB-69

1.0

2.0

3.0

1.0

2.0

2.0

3.0

0.7

1.5

2.0

2.0

0.7

1.5

30

30

30

40

40

40

40

60

60

60

60

90

90

30

40

50

30

60

40

60

10

25

25

40

10

40

0.45

0.45

0.45

0.55

0.55

0.6

0.5

0.62

0.7

0.69

0.62

0.81

0.81

1.0

2.0

3.0

1.0

2.0

2.0

2.0

0.7

1.5

2.0

2.0

0.7

1.5

ConditionTa (°C)

150

150

150

150

150

150

150

150

150

150

150

150

150

1.0

2.0

3.0

1

5

0.2

5

1

1

1

2

1

2

IR (H)(mA)

PackageVR=VRM

max

35

70

100

35

70

70

100

30

70

55

70

30

55

–40 to +150

20

20

20

20

20

20

20

20

20

20

20

20

20

1

1

1

1

1

1

1

1

1

1

1

1

1

0.072

0.072

0.072

0.072

0.072

0.072

0.072

0.072

0.072

0.072

0.072

0.072

0.072

VRM

(V)IF (AV)

(A)

IFSM(A) VF

(V)max

Tstg(ºC)

trr (ns)

trr (ns)

Rth (j-l)

(°C/W)Weight

(g)Tj

(ºC)

IR(µA)

VR=VRMmax

Part No.ConditionIF (A)

SFPL-52

SFPL-62

MPL-102S

MP2-202S

SFPL-64

200

400

0.9

1.0

10.0

20.0

1.0

25

25

65

110

25

0.98

0.98

0.98

0.98

1.3

1.0

2.0

5.0

10.0

1.0

ConditionTa (°C)

150 (Tj)

150 (Tj)

150

150

150

50

50

40

50

50

35

35

30

35

30

100/100

100/100

100/100

100/100

100/100

10

10

100

200

10

IR (H)(mA)

PackageVR=VRM

max

1

1

0.2

0.4

0.05

–40 to +150

Surface-mountUltra Fast Recovery Rectifier Diodes

ConditionIF/IRP (mA)

100/200

100/200

100/200

100/200

100/200

20

20

2.5

2.5

20

1

1

2

2

1

0.072

0.072

1.4

1.4

0.072

ConditionIF/IRP (mA)

Surface-mountSchottky Barrier Diodes

External Dimensions (unit: mm)

4.5 ±0.2

0.05

2.0min1.35±0.4 1.35±0.4

5.1+0.4–0.1

2.6

±0.2

2.05

±0.2

1.1 ±0.2

1.5 ±0.2

1: (Surface-mount SFP) 2: (TO-220S)

6.5±0.4 2.3±0.4 5.4

4.9

4.15.4

a

b

c

±0.4

1.7

±0.5

5.5

±0.4

2.5

±0.4

0.8±0.1 0.8

1.5max

±0.1

0.55±0.1

0.55±0.1

1.15±0.1

1.2m

ax

2.29±0.5 2.29±0.5

0 to 0.25

0.5

±0.2

2.9

0.16

1.37

5.0

0.7

N.C AnodeCathode

* under development

(Common with heatsink)

a) Part No.b) Polarityc) Lot No.

Page 133: datashet automotriz

TapingName Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging

Quantity

A suffix "V" is added to Part No. for tape packaging.

V

Emboss taping Reel

(1) The right side of the tape is the cathode viewing in the unfold direction.(2) The product is inserted into the case with the installed electrode on the lower side.(3) A leader tape 150 to 200mm long is provided on the unfolding edge.(4) A space of at least 10 pitches equivalent is provided on either end of the tape.(5) Taping with reversed diode polarity is available on request (taping name VL).

1,800 pcs.

per reel

4.5±0.2

0.05

2.0min1.35 ±0.4 1.35±0.4

5.1+0.4–0.1

2.6

±0.2

2.05

±0.2

1.1±0.2

1.5±0.2

0.1

+ –0.0

5

4.0±0.12.0

3.1

2.6

12.0

±0.3

5.5

±0.0

51.

75±0

.1

4.0±0.1

5.5

Pull out direction

1.5+0.1–0

13 ±0.5

2.0±0.5

21±0.8

R1.0

178±2 14±1.5 2.0±0.5

65

Marking of Part No., Lot No., quantity, etc.

Taping Specifications

General-purpose Diodes - Taping Specifications

131

TapingName Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging

Quantity

A suffix "VR" is added to Part No. for tape packaging.

VR

A suffix "VL" is added to Part No. for tape packaging.

VL3,000 pcs.

per reel

3,000 pcs.

per reel

5,000 pcs.

per reel

TapingName Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging

Quantity

A suffix "V1" is added to Part No. for tape packaging.

V1

Axial taping

6±1.0 6±1.0

5±0.5

58

1.0max

1.2

max

±1

29±1.5

75±1.5

340±2

25±1

Power Surface-mount - Taping Specifications

High-voltage diodes for ignition - Taping Specifications

10.8±0.1

4±0.1 12±0.1

2±0.1

4.9±0.1

24±0

.311.5

±0.1

1.75

±0.1

0.4±0.1

5.4max

2.5 ±0.1(Bottom dimensions)

(Bot

tom

dim

ensio

ns)

21.5

±0.1

14.4

±0.1

(Cov

er ta

pe)

(Seal part)

(Seal part)+0.1 01.5

Pull out direction

Pull out direction

35°

120°

R135

10

10

22

20406080

9±0.5

2±0.5

21±0.8

13 ±0.2

7±0

.5

5 ±0.5

13±0.5

330±2

100±1

13±0

.2

25.5±1

29.5±1

1 3 8 1 3 8

B

MaterialsDisc: both-face white corrugated cardboardCore: foamed styrol

Part No.

QuantityTaping name

(type) Lot No.

Part No.

QuantityLot No.

Page 134: datashet automotriz

132

General-purpose Diodes - Taping Specifications

TapingName Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging

Quantity

A suffix "VR" is added to Part No. for tape packaging.

VR

A suffix "VL" is added to Part No. for tape packaging.

VL750 pcs.

per reel

750 pcs.

per reel

The label showing the product name, quantity and production lot is attached to the reel.

Power Zener Surface-mount - Taping Specifications

Pull out direction

Pull out direction

35°

120°

R135

10

10

22

20406080

9±0.5

2±0.5

21±0.8

13 ±0.2

7±0

.5

5 ±0.5

13±0.5

330±2

100±1

13±0

.2

25.5±1

29.5±1

1 3 B 1 3 B

B

1.50±0.1

1.50±0.25

0.40±0.0516.00±0.1

10.80±0.1

2.00±0.14.00±0.1

5.64±0.1

4°4°

1.75

±0.1

11.5

0±0.

1

16.0

0±0.

1

24.0

0+0.

3–0

.1R TYPE L TYPE

8°8°

Page 135: datashet automotriz

133

3 LEDs

3-1. Uni-Color LED Lamps .............. 134

3-2. Bi-Color LED Lamps .................. 137

3-3. Surface Mount LEDs .................. 138

3-4. Infrared LEDs ..................................... 140

3-5. Ultraviolet LEDs ............................... 141

3-6. Multi-chip Modules ..................... 142

Page 136: datashet automotriz

134

General-purpose LEDs

Uni-Color LED Lamps

Outline Emitting color Part No. Lens color VF(V)

IV(mcd)

typ max typ typ typ

Electro-optical characteristics (Ta=25ºC)

SEL1110RSEL1110WSEL1110SSEL1610WSEL1610CSEL1210RSEL1210SSEL1810DSEL1810ASEL1910DSEL1910ASEL1710YSEL1710KSEL1410GSEL1410ESEL1510CSEL1210RMSEL1210SMSEL1810DMSEL1810AMSEL1910DMSEL1910AMSEL1710KMSEL1410GMSEL1410EMSEL1510CMSELU1210CXMSELU1910CXM-SSELU1D10CXMSELU1E10CXMSELS1E10CXM-MSELU1250CMSEL1250SMSEL1250RMSEL1850AMSEL1850DMSEL1950KMSEL1450EKMSEL1450GM-YGSEL1550CMSELU1D50CMSELU1E50CMSEL1615CSELU1253CMKTSEL1453CEMKTSEL4110SSEL4110RSEL4210SSEL4210RSEL4810ASEL4810DSEL4910ASEL4910DSEL4710KSEL4710Y

Diffused red

Diffused white

Tinted red

Diffused white

Clear

Diffused red

Tinted red

Diffused orange

Tinted orange

Diffused orange

Tinted orange

Diffused yellow

Tinted yellow

Diffused green

Tinted green

Clear

Diffused red

Tinted red

Diffused orange

Tinted orange

Diffused orange

Tinted orange

Tinted yellow

Diffused green

Tinted green

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Tinted red

Diffused red

Tinted orange

Diffused orange

Tinted orange

Tinted green

Diffused green

Clear

Clear

Clear

Clear

Clear

Tinted green

Tinted red

Diffused red

Tinted red

Diffused red

Tinted orange

Diffused orange

Tinted orange

Diffused orange

Tinted yellow

Diffused yellow

Deep red

High-intensity red

Red

Amber

Orange

Yellow

Green

Pure green

Red

Amber

Orange

Yellow

Green

Pure greenUltra high-intensity red

Ultra high-intensity orange

Ultra high-intensity pure green

Ultra high-intensity blue

Ultra high-intensity blue

Ultra high-intensity red

Red

Amber

Orange

Green

Pure greenUltra high-intensity pure green

Ultra high-intensity blue

High-intensity red

Ultra high-intensity red

Green

Deep red

Red

Amber

Orange

Yellow

2.0

1.75

1.9

1.9

1.9

2.0

2.0

2.0

1.9

1.9

1.9

2.0

2.0

2.02.02.03.33.33.72.0

1.9

1.9

1.9

2.0

2.03.33.31.752.02.0

2.0

1.9

1.9

1.9

2.0

2.5

2.2

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.52.52.54.04.04.22.5

2.5

2.5

2.5

2.5

2.54.04.02.22.52.5

2.5

2.5

2.5

2.5

2.5

700

660

630

610

587

570

560

555

630

610

587

570

560

555635591525468468635

630

610

587

560

555525468660635560

700

630

610

587

570

625

642

620

605

590

571

567

559

620

605

590

571

567

559625589530470470625

620

605

590

567

559530470642625567

625

620

605

590

571

1

2

3

4

5

6

7

2.82.84.5250300

267518371425226532845036751837193465308450

280450

2000600

1000900

7548906096

190120

7260001850

1702001402.41.73017201526163614

5

20

20

10

10

10

20

20

20

10

10

10

20

20202020202020

20

20

20

20

202020202020

5

20

10

10

10

GaP

GaA As

GaAsP

GaAsP

GaAsP

GaP

GaP

GaP

GaAsP

GaAsP

GaAsP

GaP

GaP

GaPA GaInPA GaInP

InGaNInGaNInGaN

A GaInP

GaAsP

GaAsP

GaAsP

GaP

GaPInGaNInGaN

GaA AsA GaInP

GaP

GaP

GaAsP

GaAsP

GaAsP

GaP

Chipmaterial

Parameter Unit Conditions

mW

mA

mA /ºC

mA

V

ºC

ºC

PD

IF

∆IF

IFP

VR

Top

Tstg

RatingsGaP GaAsP GaA As A GaInP InGaN GaN

75 120

30

– 0.45 Above 25ºC

f=1kHz, tw=100µs100 70

–30 to +80

53

–30 to +85

–30 to +100

(Ta=25ºC)Absolute Maximum Ratings

ConditionIF (mA)

Dominant wavelengthλp (nm)

Peak wavelengthλp (nm)

Con

tact

mou

nt

Fig

. No

.

5 Round

4 Round

4.65.6Egg-shaped

Page 137: datashet automotriz

135

Uni-Color LED Lamps

General-purpose LEDs

Outline Emitting color Part No. Lens color VF (V) IV(mcd)

Peak wavelengthλp (nm)Condition

IF (mA)typ max typ typ typ

Electro-optical characteristics (Ta=25ºC)Dominant wavelength

λp (nm)

SEL4410ESEL4410GSELU4410CKT-SSEL4510CSEL4114SSEL4114RSEL4214SSEL4214RSEL4814ASEL4814DSEL4914ASEL4914DSEL4714KSEL4714YSEL4414ESEL4414GSEL4514CSEL6110SSEL6110RSEL6210SSEL6210RSEL6810ASEL6810DSELU6910C-SSEL6910ASEL6910DSEL6710KSEL6710YSEL6410ESEL6410GSEL6510CSEL6510GSEL6E10CSELU6614C-SSELU6614W-SSELU6214CSEL6214SSEL6814ASELS6B14CSELU6914C-SSEL6914ASEL6914WSELU6714CSEL6714KSEL6714WSEL6414ESELU6414G-SSEL6414E-TGSEL6514CSELS6D14CSELS6E14C-MSEL6215SSEL6915ASEL6715CSEL6415ESEL6515CSEL2110SSEL2110RSEL2110WSEL2610CSELU2610C-SSEL2210SSEL2210RSEL2210WSEL2810ASEL2810DSELU2B10A-S

Tinted green

Diffused green

Clear

Clear

Tinted red

Diffused red

Tinted red

Diffused red

Tinted orange

Diffused orange

Tinted orange

Diffused orange

Tinted yellow

Diffused yellow

Tinted green

Diffused green

Clear

Tinted red

Diffused red

Tinted red

Diffused red

Tinted orange

Diffused orange

Clear

Tinted orange

Diffused orange

Tinted yellow

Diffused yellow

Tinted green

Diffused green

Clear

Diffused green

Clear

Clear

Diffused white

Clear

Tinted red

Tinted orange

Clear

Clear

Tinted orange

Diffused white

Clear

Tinted yellow

Diffused white

Tinted green

Diffused green

Tinted green

Clear

Clear

Clear

Tinted red

Tinted orange

Clear

Tinted green

Clear

Tinted red

Diffused red

Diffused white

Clear

Clear

Tinted red

Diffused red

Diffused white

Tinted orange

Diffused orange

Tinted orange

Green

Ultra high-intensity green

Pure green

Deep red

Red

Amber

Orange

Yellow

Green

Pure green

Deep red

Red

Amber

Ultra high-intensity orange

Orange

Yellow

Green

Pure green

Blue

Ultra high-intensity red

RedAmber

Ultra high-intensity light amber

Ultra high-intensity orange

Orange

Ultra high-intensity yellow

Yellow

GreenUltra high-intensity green

Deep greenPure green

Ultra high-intensity pure green

Ultra high-intensity blue

RedOrangeYellowGreen

Pure green

Deep red

High-intensity red

Ultra high-intensity deep red

Red

Amber

Ultra high-intensity light amber

2.0

2.12.0

2.0

1.9

1.9

1.9

2.0

2.0

2.0

2.0

1.9

1.9

2.0

1.9

2.0

2.0

2.0

4.0

2.0

2.01.91.92.2.0

1.9

2.1

2.0

2.02.12.02.03.33.71.91.92.02.02.0

2.0

1.752.0

1.9

1.9

2.0

2.5

2.52.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

4.8

2.5

2.52.52.52.52.5

2.5

2.5

2.5

2.52.52.52.54.04.22.52.52.52.52.5

2.5

2.22.5

2.5

2.5

2.5

560

560555

700

630

610

587

570

560

555

700

630

610

591

587

570

560

555

430

650

635630610600591

587

572

570

560560558555518468630587570560555

700

660650

630

610

598

567

562559

625

620

605

590

571

567

559

625

620

605

589

590

571

567

559

466

639

625620605596589

590

571

571

567562564559525470620590571567559

625

642639

620

605

595

7

8

9

10

11

12

8734

170453.82.840242015261138276948263.92.64118229.6550

221137119030429.660

15090

180189.01201808.05.060663042301812

300704560908144

41.81.860

300401515229.0300

20

2020

10

20

10

10

10

20

20

10

20

10

20

10

10

20

20

20

20

2020102020

10

20

20

2020202020202020202020

10

2020

20

10

20

GaP

A GaInPGaP

GaP

GaAsP

GaAsP

GaAsP

GaP

GaP

GaP

GaP

GaAsP

GaAsP

A GaInP

GaAsP

GaP

GaP

GaP

GaN

A GaInP

A GaInPGaAsPGaAsP

A GaInPA GaInP

GaAsP

A GaInP

GaP

GaPA GaInP

GaPGaP

InGaNInGaNGaAsPGaAsP

GaPGaPGaP

GaP

GaA AsA GaInP

GaAsP

GaAsP

A GaInP

Chipmaterial C

onta

ctm

ount

Fig

. No

.

4 Round

3 Round

Ultra high-intensitydeep red

Page 138: datashet automotriz

136

Uni-Color LED Lamps

General-purpose LEDs

Outline Emitting color Part No. Lens color

typ max typ typ typ

SEL2910ASEL2910DSELU2710CSEL2710KSEL2710YSEL2410ESEL2410GSEL2510CSEL2510GSELU2D10CSELU2E10CSEL2E10CSELU2215R-SSEL2215SSEL2215RSEL2815ASEL2815DSEL2915ASEL2915DSEL2715KSEL2715YSEL2415ESEL2415GSEL2515CSEL1213CSEL1813ASEL1913KSEL1713KSEL1413ESEL1513ESELU6213C-SSELS6B13WSEL6413ESEL6413E-TGSEL6513CSEL2613CS-SSEL2213CSEL2813ASEL2913KSEL2713KSEL2413ESEL2413GSEL2513ESEL5620CSELU5620S-SSELU5220C-SSEL5220SSELU5820C-SSEL5820ASELU5B20CSEL5920ASELU5720CSEL5420ESEL5520CSEL5E20CSELS5223CSEL5223SSEL5823ASELS5B23CSELS5923CSEL5923ASELU5723CSEL5723CSEL5423ESEL5523CSELU5E23CSEL5E23C

Tinted orange

Diffused orange

Clear

Tinted yellow

Diffused yellow

Tinted green

Diffused green

Clear

Diffused green

Clear

Clear

Clear

Diffused red

Tinted red

Diffused red

Tinted orange

Diffused orange

Tinted orange

Diffused orange

Tinted yellow

Diffused yellow

Tinted green

Diffused green

Clear

Tinted red

Tinted orange

Tinted light orange

Tinted yellow

Tinted green

Tinted light green

Clear

Diffused white

Tinted green

Tinted green

Clear

Tinted light red

Tinted red

Tinted orange

Tinted orange

Tinted yellow

Tinted green

Diffused green

Tinted green

Clear

Tinted red

Clear

Tinted red

Clear

Tinted orange

Clear

Tinted orange

Clear

Tinted green

Clear

Clear

Clear

Tinted red

Tinted orange

Clear

Clear

Tinted orange

Clear

Clear

Tinted green

Clear

Clear

Clear

Orange

Ultra high-intensity yellow

Yellow

Green

Pure green

Ultra high-intensity pure green

Ultra high-intensity blue

Blue

Ultra high-intensity red

Red

Amber

Orange

Yellow

Green

Pure green

Red

Amber

Orange

Yellow

Green

Pure green

Ultra high-intensity red

Ultra high-intensity light amber

Green

Deep green

Pure green

High-intensity red

Red

Amber

Orange

Yellow

Green

Pure green

High-intensity red

Ultra high-intensity deep red

Ultra high-intensity red

Red

Ultra high-intensity amber

Amber

Ultra high-intensity light amber

Orange

Ultra high-intensity yellow

Green

Pure green

Blue

Ultra high-intensity red

Red

Amber

Ultra high-intensity light amber

Ultra high-intensity orange

Orange

Ultra high-intensity yellow

Yellow

Green

Pure green

Ultra high-intensity blue

Blue

1.9

2.1

2.0

2.0

2.0

3.33.34.02.0

1.9

1.9

1.9

2.0

2.0

2.01.91.91.92.02.02.02.02.02.02.02.01.751.91.91.92.0

2.0

2.01.752.02.01.92.01.92.01.92.12.02.04.02.01.91.92.02.01.92.12.02.02.03.34.0

2.5

2.5

2.5

2.5

2.5

4.04.04.82.5

2.5

2.5

2.5

2.5

2.5

2.52.52.52.52.52.52.52.52.52.52.52.52.22.52.52.52.5

2.5

2.52.22.52.52.52.52.52.52.52.52.52.54.82.52.52.52.52.52.52.52.52.52.54.04.8

587

572

570

560

555

525468430632

630

610

587

570

560

555630610587570560555632600560558555660630610587570

560

555660650632630611610600587572560555430635630610600591587572570560555468430

590

571

571

567

559

530470466624

620

605

590

571

567

559620605590571567559624596567564559642620605590571

567

559642639624620605605596590571567559466625620605596589590571571567559470466

12

13

14

15

16

17

18

168.0270

40147720438.2

1200400

60380

453880608153

130110110

72527.08.08.015125.0306014

65.0207.08.08.01714125.0100100120

20150

12120

1250206.010

1002535

135145

35155

604013

18020

10

20

10

20

20

20202020

20

10

10

10

20

2020202020202020202020202020202020

20

20202020202020202020202020202020202020202020202020

GaAsP

A GaInP

GaP

GaP

GaP

InGaNInGaNGaN

A GaInP

GaAsP

GaAsP

GaAsP

GaP

GaP

GaPGaAsPGaAsPGaAsP

GaPGaPGaP

A GaInPA GaInP

GaPGaPGaP

GaA AsGaAsPGaAsPGaAsP

GaP

GaP

GaPGaA AsA GaInPA GaInPGaAsP

A GaInPGaAsP

A GaInPGaAsP

A GaInPGaPGaPGaN

A GaInPGaAsPGaAsP

A GaInPA GaInPGaAsP

A GaInPGaPGaPGaP

InGaNGaN

VF (V) IV(mcd)

Peak wavelengthλp (nm)Condition

IF (mA)

Electro-optical characteristics (Ta=25ºC)Dominant wavelength

λp (nm) Chipmaterial C

onta

ctm

ount

Fig

. No

.

3 Round

Inverted-cone typ for surface illumination

5mm Pitch lead rectangular

5mm Pitch lead bow-shaped

Page 139: datashet automotriz

137

General-purpose LEDs

Bi-Color LED Lamps

Outline Emitting colorPart No. Lens color Common

typ max typ typ typ

Electro-optical characteristics (Ta=25ºC)

Parameter Unit Conditions

mW

mA

mA /ºC

mA

V

ºC

ºC

PD

IF

∆IF

IFP

VR

Top

Tstg

75 120

30

–0.45

Also applies to simultaneous lighting

Above 25ºC

f=1kHz, tw=100µs100

53

–30 to +85

–30 to +100

(Ta=25ºC)Absolute Maximum Ratings

SML11516C

SML1516W

SML1216C

SML1216W

SML1816W

SML19416W

SMLU12E16C

SMLU12E16W

SMLU12D16W

SMLU18D16C

SMLU18D16W-S

SML72420C

SML78420C

SML79420C

SML72423C

SML72923C

SML78423C

SML79423C

SMLS79723C

SMLU72423C-S

SMLU79423C-S

Clear

Diffused white

Clear

Diffused white

Diffused white

Diffused white

Clear

Diffused white

Diffused white

Clear

Diffused white

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Deep red

Pure green

Deep red

Pure green

Red

Green

Red

Green

Amber

Green

Orange

Green

Ultra high-intensity red

Ultra high-intensity blue

Ultra high-intensity red

Ultra high-intensity blue

Ultra high-intensity red

Ultra high-intensity pure green

Ultra high-intensity amber

Ultra high-intensity pure green

Ultra high-intensity amber

Ultra high-intensity pure green

Red

Green

Amber

Green

Orange

Green

Red

Green

Red

Orange

Amber

Green

Orange

Green

Ultra high-intensity orange

Yellow

Ultra high-intensity red

Ultra high-intensity green

Ultra high-intensity orange

Ultra high-intensity green

2.0

2.0

2.0

2.0

1.9

2.0

1.9

2.0

1.9

2.0

1.9

2.0

2.0

3.3

2.0

3.3

2.0

3.3

2.0

3.3

2.0

3.3

1.9

2.0

1.9

2.0

1.9

2.0

1.9

2.0

1.9

1.9

1.9

2.0

1.9

2.0

2.0

2.0

2.0

2.2

2.0

2.2

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

4.0

2.5

4.0

2.5

4.0

2.5

4.0

2.5

4.0

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

700

555

700

555

630

560

630

560

610

560

587

560

632

468

632

468

632

525

611

525

611

525

630

560

610

560

587

560

630

560

630

587

610

560

587

560

590

570

635

560

590

560

625

559

625

559

620

567

620

567

605

567

590

567

624

470

624

470

624

530

605

530

605

530

620

567

605

567

590

567

620

567

620

590

605

567

590

657

590

571

625

567

590

567

19

20

21

15

50

6.0

20

65

90

60

60

50

60

45

60

500

400

250

150

250

700

800

2000

300

500

15

20

10

20

10

20

25

35

25

25

25

35

25

35

150

40

120

30

150

30

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

GaP

GaP

GaP

GaP

GaAsP

GaP

GaAsP

GaP

GaAsP

GaP

GaAsP

GaP

A GaInP

InGaN

A GaInP

InGaN

A GaInP

InGaN

A GaInP

InGaN

A GaInP

InGaN

AGaAsP

GaP

GaAsP

GaP

GaAsP

GaP

GaAsP

GaP

GaAsP

GaAsP

GaAsP

GaP

GaAsP

GaP

A GaInP

GaP

A GaInP

A GaInP

A GaInP

A GaInP

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

Cathode

RatingsGaP GaAsP GaA As A GaInP InGaN

VF (V) IV(mcd)

Peak wavelengthλp (nm)Condition

IF (mA)

Dominant wavelengthλp (nm) Chip

material Con

tact

mou

nt

Fig

. No

.

5 Round

3.36 Bow-shaped

3.36Rectangular

Page 140: datashet automotriz

138

Outline Emitting color Part No. Lens color

typ max typ typ typ

SEC4201CSEC4801CSEC4901CSEC4701CSEC4401CSEC4401E-TGSEC4501CSECU4E01CSEC4203CSEC4803CSEC4903CSEC4703CSEC4403CSEC4403E-TGSEC4503CSEC1101CSEC1601CSEC1201CSEC1801CSEC1901CSEC1701C-YGSEC1401CSEC1401E-TGSEC1501CSECU1D01CSECU1E01CSEC1E01CSEC1603CSECS1203CSEC1203CSECS1803CSEC1803CSECS1903CSEC1903CSEC1703CSEC1403CSEC1403E-TGSEC1503C

Clear

Clear

Clear

Clear

Clear

Tinted green

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Tinted green

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Tinted green

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Tinted greenClear

Red

Amber

Orange

Yellow

Green

Deep green

Pure green

Ultra high-intensity blue

Red

Amber

Orange

Yellow

Green

Deep green

Pure green

Deep red

High-intensity red

Red

Amber

Orange

Yellow

Green

Deep green

Pure green

Ultra high-intensity pure green

Ultra high-intensity blue

Blue

High-intensity red

Ultra high-intensity red

Red

Ultra high-intensity amber

Amber

Ultra high-intensity orange

Orange

Yellow

Green

Deep green

Pure green

1.9

1.9

1.9

2.0

2.0

2.0

2.0

3.3

1.9

1.9

1.9

2.0

2.0

2.0

2.0

2.0

1.7

1.9

1.9

1.9

2.0

2.0

2.0

2.0

3.3

3.3

3.9

1.7

1.9

1.9

1.9

1.9

1.9

1.9

2.0

2.0

2.0

2.0

2.5

2.5

2.5

2.5

2.5

2.5

2.5

4.0

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.2

2.5

2.5

2.5

2.5

2.5

2.5

2.5

4.0

4.0

4.8

2.2

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

630

610

587

570

560

558

555

468

630

610

587

570

560

558

555

700

660

630

610

587

570

560

558

555

525

470

430

660

635

630

615

610

590

587

570

560

558

555

620

605

590

571

567

564

559

470

620

605

590

571

567

564

559

625

642

620

605

590

571

567

564

559

525

468

466

642

625

620

607

605

590

590

571

567

564

559

22

23

24

25

10

16

13

25

22

11

8.0

50

15

20

15

35

33

15

10

1.5

25

10

16

13

25

22

11

8.0

150

50

6.0

35

100

15

10

20

70

15

35

33

15

10

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

3

20

20

20

20

20

20

20

GaAsP

GaAsP

GaAsP

GaP

GaP

GaP

GaP

InGaN

GaAsP

GaAsP

GaAsP

GaP

GaP

GaP

GaP

GaP

GaA As

GaAsP

GaAsP

GaAsP

GaP

GaP

GaP

GaP

InGaN

InGaN

GaN

GaA As

A GaInP

GaAsP

A GaInP

GaAsP

A GaInP

GaAsP

GaP

GaP

GaP

GaP

Surface Mount LEDs

Uni-Color Surface Mount LEDs

Parameter Unit Conditions

mA

mA /ºC

mA

V

ºC

ºC

IF

∆IF

IFP

VR

Top

Tstg

GaP GaAsP InGaN GaN30

–0.45 Above 25ºC

f=1kHz, tw=100µs70

54

–30 to +85 –25 to +85

–30 to +100

(Ta=25ºC)Absolute Maximum Ratings

General-purpose LEDs

RatingsGaA As A GaInP

Electro-optical characteristics (Ta=25ºC)

VF (V) IV(mcd)

Peak wavelengthλp (nm)Condition

IF (mA)

Dominant wavelengthλp (nm) Chip

material Fig

. No

.

Side view(flat lens type)

Side view(inner lens type)

31.5(flat lens type)

31.5(inner lens type)

Page 141: datashet automotriz

139

Uni-color / Bi-color Surface Mount LEDs with two elements

General-purpose LEDs

Outline Emitting colorPart No. Lens color

typ max typ typ typ

SEC2422C

SEC2442C

SEC2462C

SEC2492C

SEC2552C

SEC2592C

SEC2762C-YG

SEC2484C

SEC2554C

SEC2494C

SEC2764C

SEC2774C

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Red

Green

Green

Green

High-intensity red

Green

Orange

Green

Pure green

Pure green

Orange

Pure green

High-intensity red

Yellow

Amber

Green

Pure green

Pure green

Orange

Green

High-intensity red

Yellow

Yellow

Yellow

1.9

2.0

2.0

2.0

1.7

2.0

1.9

2.0

2.0

2.0

1.9

2.0

1.7

2.0

1.9

2.0

2.0

2.0

1.9

2.0

1.7

2.0

2.0

2.0

2.5

2.5

2.5

2.5

2.2

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.2

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.2

2.5

2.5

2.5

630

560

560

560

660

560

587

560

555

555

587

555

660

570

610

560

555

555

587

560

660

570

570

570

620

567

567

567

642

567

590

567

559

559

590

559

642

571

605

567

559

559

590

567

642

571

571

571

26

27

10

20

20

20

20

20

10

20

5.0

5.0

10

5.0

20

20

20

30

10

10

20

30

50

50

50

50

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

20

GaAsP

GaP

GaP

GaP

GaA As

GaP

GaAsP

GaP

GaP

GaP

GaAsP

GaP

GaA As

GaP

GaAsP

GaP

GaP

GaP

GaAsP

GaP

GaA As

GaP

GaP

GaP

Surface Mount LEDs

Electro-optical characteristics (Ta=25ºC)

VF (V) IV(mcd)

Peak wavelengthλp (nm)Condition

IF (mA)

Dominant wavelengthλp (nm) Chip

material Fig

. No

.

32.5(flat lens type)

32.5(inner lens type)

Page 142: datashet automotriz

140

Infrared LEDs

Parameter Unit Conditions

mA

mA /ºC

mA

V

ºC

ºC

IF

∆IF

IFP

VR

Top

Tstg

Ratings

150

–1.33 Above 25ºC

f=1kHz, tw=10µs1000

5

–30 to +85

–30 to +100

(Ta=25ºC)Absolute Maximum Ratings

General-purpose LEDs

Outline Part No. Lens color (mW/sr)typ max typ typ

(Constant voltage)Vcc=3V,R=2.2Ω

IF=50mA

SID1010CMSID1K10CMSID1010CXMSID1K10CXMSID1050CMSID303CSID313BPSID1003BQSID307BRSID1G307CSID1G313CSID2010CSID2K10C

SEC1G03C

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

Clear

1.3

1.3

1.3

1.3

1.3

1.3

1.3

1.3

1.3

1.5

1.5

1.3

1.3

1.5

1.5

1.5

1.5

1.5

1.5

1.5

1.5

1.5

1.5

1.8

1.8

1.5

1.5

1.8

940

940

940

940

940

940

940

940

940

850

850

940

940

850

130

200

80

110

250

80

130

180

200

50

50

7

14

3

GaAs

GaAs

GaAs

GaAs

GaAs

GaAs

GaAs

GaAs

GaAs

GaAs

GaAs

GaAs

GaAs

GaA As

28

29

30

31

25

Infrared LEDsElectro-optical characteristics (Ta=25ºC)

VF (V) Peak wavelengthλp (nm)

ConditionChipmaterial C

onta

ct

mou

nt

Fig

. No

.

3 1.5(inner lens type)

chip

3 Round

5 RoundTransparentlight purpleTransparent

light navy blueTransparent

dark navy blue

Radiant intensity Ie

Page 143: datashet automotriz

141

General-purpose LEDs

Outline Part No. Lens color IV(mcd) Condition

IF(mA)typ max typ typ typ

SECU1V0AC Clear2.8 3.5 3.7 4.0 385 40002.2 20 100pF, 1.5kΩ InGaN 32

Ultraviolet LEDs

Ultraviolet Surface Mount LEDs

Parameter Unit Conditions

mA

mA /ºC

mA

mA

ºC

ºC

IF

∆IF

IFP

IR

Top

Tstg

Ratings

30

–0.45

100

100

–30 to +85

–30 to +100

Absolute Maximum Ratings

Electrostatic withstand voltage

(Ta=25ºC)

Above 25ºC

f=1kHz, tw=10µs

Max. rating of built-in Zener diode

Electro-optical characteristics (Ta=25ºC)

VF (V)Peak wavelength

λp (nm)Condition

Chipmaterial F

ig. N

o.

(V)

Page 144: datashet automotriz

Part No. Fig. No.Colors compliant with JIS-Z9112

SEP8WD4001

SEP8WN4001

SEP8WE4001

SEP8WW4001

SEP8WL4001

Cool white

Natural white

White

Warm white

Light bulb

Color temperature [°K]20mA

6400

5000

4200

3450

2875

Total flux [lm]20mA

30

30

30

25

25

Chromaticity x, y20mA

0.32, 0.33

0.34, 0.35

0.37, 0.37

0.41, 0.38

0.44, 0.41

33

Multi-chip LED Module (under development)

Parameter Unit Conditions

mA

mA /ºC

mA

V

ºC

ºC

IF

∆IF

IFP

VR

Topr

Tstg

Ratings

40

–0.25

100

5

–30 to +85

–30 to +100

Absolute Maximum Ratings

142

General-purpose LEDs

(Per element Ta=25ºC)

With an infinite heatsink mounted

f=1kHz, tw=10µs

Page 145: datashet automotriz

Fig.1

Fig.2

Fig.3

Fig.4

Fig.5

Fig.6

Fig.7

Fig.8

Fig.9

Fig.10

General-purpose LEDs - External Dimensions

5.6±0.2 20.0min 5.0±0.5 7.6±0.2

19.0min 0.8 (1.0)

Cathode

0.5

(2.5

4)

0.5

1.1m

ax 0.8 Resin heap 1.5max

5.0±0

.2

0.5±0.1Anode

Cathode

1.0min 21.0min 9.4±0.3

5.0±0

.2

Resin heap 0.8maxResin burr 0.3max

0.65

max

0.5±0

.1

(2.5

4)

5.6±0.2 20.0min 5.5±0.5 8.2±0.2

19.0min 0.8 (1.0)

Cathode

0.5±0

.1

1.1m

ax 0.8 Resin heap 1.5max

5.0±0

.2

0.5

(2.5

4)

5.6±0.2 23.0min1.0min 6.9±0.2

Cathode

0.65

max Resin heap 1.5max

5.0±0

.2

(2.5

4)

0.5±0

.1

(1.0)

0.5±0.1

5.6±0.2 23.0min1.0min 7.6±0.2

Cathode

0.65

max Resin heap 1.5max

5.0±0

.2

0.5±0.1

0.5±0

.1

(1.0)

(2.5

4)

5.6±0

.2

Resin burr 0.3max

4.6±0

.2

1.0min 23.5min

Cathode

Anode 7.7±0.5

(2.5

4)

0.65

max

4.7±0

.25.

7±0.2

2-0.

5±0.1

0.5±0

.1

Resin heap 1.5max

143

2.2

4.8

0.4±0.1

(2.5

4)

0.45

±0.1

1.1m

ax Resin heap 1.5max

Cathode

1.0min 25.5min 5.0±0.2

6.5±0.5

0.8 1.5 4.0±0

.2

2.2

4.8

(2.5

4)

0.45

±0.1

0.65

max Resin heap 0.8max

1.0min 24.5min 5.0±0.2

4.0±0

.2

(1.5)

0.4±0.1

Cathode

3.5

0.8±0

.2

4.0±0

.2

0.4±0.1

23.0min1.0min 5.5±0.5

(1.7) 3.5±0.1

(2.5

4)

3.1±0

.1

4.4

0.45

±0.1

0.65

max Resin heap

0.8max

Cathode

3.5

0.8±0

.2

4.0±0

.2

0.4±0.1

23.0min1.0min 4.5±0.5

(1.6) 2.5±0.1

(2.5

4)

3.5

4.4

0.45

±0.1

0.65

max Resin heap

0.8max

Cathode

(Unit: mm)

Page 146: datashet automotriz

Fig.11

Fig.12

Fig.13

Fig.14

Fig.15

Fig.16

Fig.17

Fig.18

Fig.19

Fig.20

144

General-purpose LEDs - External Dimensions

3.55.5

0.8±0

.2

4.0±0

.2

0.4±0.1

23.0min1.0min(1.7) 3.5±0.1

(2.5

4) 3.1±0

.1

4.4

0.45

±0.1

0.65

max Resin heap

0.8max

Resin burr0.3max

Cathode mark

Cathode

1.7

3.8

0.4

1.0min 25.8min 3.5±0.1

(1.3)

0.45

±0.1

0.65

max Resin heap 1.5max

3.1±0

.1

Cathode

(2.5

4)

1.55

3.8

0.4±0.1

1.0min 25.4min 4.0±0.1

(1.3)

(2.5

4)

0.45

±0.1

0.65

max Resin heap 1.5max

3.1±

0.1

Cathode

1.7

3.8±0

.1

0.4

(2.5

4)

1.0min 25.8min 2.6±0.1

(1.3)

0.45

±0.1

0.65

max

Resin heap 1.5maxResin burr 0.3max

3.1±0

.1

Cathode

0.4±0.1

23.0min 4.51.0min3.5

2.5±0.1(1.7)

0.45

±0.1

0.8±0

.24.0±0

.2

4.4

0.65

max

Resin heap 0.8maxResin burr 0.3max

3.5±0

.1

(2.5

4)

0.4±0

.1

Cathode

5.6±0.2 20.0min 5.0±0.5 5.8±0.2

19.0min 0.8 (1.0)

0.5

0.5±0

.1

1.1m

ax 0.8 Resin heap 1.5max

4.9±0

.2

Cathode

(2.5

4)

6.2

1.4

3.6

(5.0

)

4.2±0.523.0min1.0min

6.0±0

.2

0.5±0

.1

0.65

max

Resin heap 0.8maxResin burr 0.3maxCathode

3.3±0

.2

0.5±0.1

Cathode mark

6.2

1.4

3.6

(5.0

)5.8±0.523.0min1.0min

3.9

0.5+

0.1

0.65

max

Resin heap 0.8max

Resin burr 0.3maxCathode markCathode

0.5±0

.1

3.6±0

.2

6.0±0

.23.

1

1.0min 17.0min 10.6±0.51.5min

2.0±0.5 7.6±0.21.00.5±0.1

5.8±0

.2

(2.5

4)(2

.54)

Resin heap 1.5maxResin burr 0.3max

5.0±0

.2

1.20.83

– 0.

5±0.1

0.65

max

3.920.0min1.0min

3.3

0.5+

0.1

6.0±0

.2

6.2

1.5min

3.6

0.5±0

.1

0.65

max

Resin heap 1.5maxResin burr 0.3max

(2.5

4)(2

.54)

(Unit: mm)

Page 147: datashet automotriz

Fig.21

Fig.22

Fig.23

Fig.24

Fig.25

Fig.26

Fig.27

Fig.28

Fig.29

General-purpose LEDs - External Dimensions

145

3.920.0min1.0min

3.1±0

.20.5±0

.1

6.0±0

.2

6.2

1.5min

3.6

0.5±0

.1

0.65

max

Resin heap 1.5maxResin burr 0.3max

3.6±0

.2

5.8±0.5(2

.54)

(2.5

4)

1.5

3.0

Cathodemark

2.0

1.5

0.9 (0.5)

1.4

Resin

P.C.B.

Anode

Cathode

1.6

0.6

1.3

1.5

3.0

2.0

1.7

1.4(0.5)0.9

1.6

0.6

1.3

Lens Resin Anode

CathodeCathodemark

P.C.B.

1.0

2.51.5

3.0

2.0

1.5

1.4±0.1

1.0

1.0

0.90.6±0.1

P.C.B.

Anode

Cathode

Cathodemark 0.9 (0.5)

Resin

AB

2.51.5

0.8

1.8

3.0

2.0

1.5

1.4±0.1

1.0

1.0

0.90.6±0.1

Lens

P.C.B.

Anode

Cathode

Cathodemark 0.9 (0.5)

Resin

AB

5.6±0.2 23.0min1.0min A

Cathode

0.65

max

Resin heap 1.5maxResin burr 0.3max

5.0±0

.2

0.5±0.1

0.5±0

.1

(1.0)

(2.5

4)

0.5±0

.1

0.5±0.1

Anode

Cathode

1.0min 21.0min 9.4±0.3

5.0±0

.2

Resin heap 0.8maxResin burr 0.3max

0.65

max

0.5±0

.10.

5±0.1

(2.5

4)

Cathode markResin

P.C.B.

Anode

Cathode

MAX 0.1

3.0

1.5

4-R0.35

1.0

2.5

(1.6

)(0.

6)

1.5

2.0

0.9

1.4

(0.5)

±0.1

SEC4001

Cathodemark

Resin

P.C.B. Anode

Cathode

MAX 0.1

±0.1

0.45

0.6

1.03

2.53

Lens

0.9

1.4

1.7

ø1.02.0

1.6

(0.5)1.5

3.0

1.3

SEC4003

7.6±0.2

6.9±0.2

SID1010CMSID1K10CMSID1010CXMSID1K10CXM

Electrode burr

(Unit: mm)

Dimension A (mm)

Electrode burr

Page 148: datashet automotriz

Fig.30

Fig.31

Fig.32

Fig.33

146

General-purpose LEDs - External Dimensions

1.7

ø3.

8

0.4

1.0min 25.8min 3.5±0.1

(1.3)

0.45

±0.1

0.65

max Resin burr 0.3max

Resin heap 1.5max

3.1±0

.1Cathode

(2.5

4)

0.4±0

.1

5.6

24.0min 8.5±0.5

Anode

(2.5

4)

0.6±0

.1

1.1m

ax0.

85+

0.1

Resin heap 1.5max

0.6±0.1

0.6±0

.1

Resin burr 0.3max

4.8±0

.2

Cathode

2.0min

(0.8)A3.5

0.8

1.43.2(2.7)

2.8

2.6

(2.4

)

Cathode Mark

Cathode

Cathode

Anode

Anode

Surface Side view

Side view

Reverse Side

Inner circuit

0.2

ZD

LED

8.8

±0.3

(0.7

)(0.8

)

3.5

(0.5)

±0.050.2

±0.050.3 ±0.25P1.0*3=3.0±0.253.0

4.8

12.0

Mark

Heatsink

Resin: color White

4.4

5.8

2.0

10.0

13.2

12 11 10

5 6 7 83 42

16 15 14 13 9

1 Resin

Dimension A (mm)

SID303C 3.0±0.5

3.6±0.5

4.2±0.5

SID313BPSID1003BQSID307BRSID1G307C

(Unit: mm)

Page 149: datashet automotriz

147

Power transistor

Power transistor

Power transistor

Power transistor

Power transistor

Power transistor

Power transistor

Power transistor

Power transistor

Power transistor

Power transistor

Power transistor

MOS FET

MOS FET

MOS FET

MOS FET

MOS FET

MOS FET

MOS FET

MOS FET

MOS FET

Power transistor

Power transistor

Power transistor

Ultrafast Recovery Diode (Surface Mount)

Ultrafast Recovery Diode (Surface Mount)

Power Zener Diode (Surface Mount)

Power transistor Array (Surface Mount)

Power transistor Array (Surface Mount)

Power transistor Array (Surface Mount)

High-side Power Switch IC

MOS FET Array ( Surface mount )

MOS FET Array ( Surface mount )

MOS FET Array ( Surface mount )

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount LED

3 x 1.5 Infrared Surface Mount Inner Lens Type LED

2SA1488/A

2SA1567

2SA1568

2SA1908

2SB1622

2SC3852

2SC4024

2SC4065

2SC4153

2SD2141

2SD2382

2SD2633

2SK3710

2SK3711

2SK3724

2SK3800

2SK3801

2SK3803

2SK3851

FKV460S

FKV660S

FP812

MN611S

MN638S

MP2-202S

MPL-102S

PZ628

SDA03

SDA04

SDC09

SDH04

SDK06

SDK08

SDK09

SEC1101C

SEC1201C

SEC1203C

SEC1401C

SEC1401E-TG

SEC1403C

SEC1403E-TG

SEC1501C

SEC1503C

SEC1601C

SEC1603C

SEC1701C-YG

SEC1703C

SEC1801C

SEC1803C

SEC1901C

SEC1903C

SEC1E01C

SEC1G03C

80

81

82

83

84

85

86

87

88

89

90

91

108

109

110

111

112

113

114

115

116

92

93

94

130

130

129

96

97

98

24

117

118

119

138

138

138

138

138

138

138

138

138

138

138

138

138

138

138

138

138

138

140

3 x 2.5 Surface Mount 2-Chip LED

3 x 2.5 Surface Mount 2-Chip LED

3 x 2.5 Surface Mount 2-Chip LED

3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED

3 x 2.5 Surface Mount 2-Chip LED

3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED

3 x 2.5 Surface Mount 2-Chip LED

3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED

3 x 2.5 Surface Mount 2-Chip LED

3 x 2.5 Surface Mount 2-Chip LED

3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED

Side-view Surface Mount LED

Side-view Surface Mount Inner Lens TypeLED

Side-view Surface Mount LED

Side-view Surface Mount LED

Side-view Surface Mount Inner Lens TypeLED

Side-view Surface Mount Inner Lens TypeLED

Side-view Surface Mount LED

Side-view Surface Mount Inner Lens TypeLED

Side-view Surface Mount LED

Side-view Surface Mount Inner Lens TypeLED

Side-view Surface Mount LED

Side-view Surface Mount Inner Lens TypeLED

Side-view Surface Mount LED

Side-view Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount Inner Lens TypeLED

3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount LED

2.8 x 3.5 Ultraviolet Surface Mount LED

Side-view Surface Mount LED

5ø Round Standard LED (With Stopper)

5ø Round Standard LED (With Stopper)

5ø Round Standard LED (With Stopper)

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

5ø Inverted-cone LED for Surface illumination

5ø Round Narrow-directivity LED, Direct mount supported5ø Round Narrow-directivity LED, Direct mount supported

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

5ø Inverted-cone LED for Surface illumination

5ø Round Narrow-directivity LED, Direct mount supported5ø Round Narrow-directivity LED, Direct mount supported

4.6 x 5.6ø Egg-shaped LED

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

SEC2422C

SEC2442C

SEC2462C

SEC2484C

SEC2492C

SEC2494C

SEC2552C

SEC2554C

SEC2592C

SEC2762C-YG

SEC2764C

SEC2774C

SEC4201C

SEC4203C

SEC4401C

SEC4401E-TG

SEC4403C

SEC4403E-TG

SEC4501C

SEC4503C

SEC4701C

SEC4703C

SEC4801C

SEC4803C

SEC4901C

SEC4903C

SECS1203C

SECS1803C

SECS1903C

SECU1D01C

SECU1E01C

SECU1V0AC

SECU4E01C

SEL1110R

SEL1110S

SEL1110W

SEL1210R

SEL1210RM

SEL1210S

SEL1210SM

SEL1213C

SEL1250RM

SEL1250SM

SEL1410E

SEL1410EM

SEL1410G

SEL1410GM

SEL1413E

SEL1450EKM

SEL1450GM-YG

SEL1453CEMKT

SEL1510C

SEL1510CM

139

139

139

139

139

139

139

139

139

139

139

139

138

138

138

138

138

138

138

138

138

138

138

138

138

138

138

138

138

138

138

141

138

134

134

134

134

134

134

134

136

134

134

134

134

134

134

136

134

134

134

134

134

5ø Inverted-cone LED for Surface illumination

5ø Round Narrow-directivity LED, Direct mount supported

5ø Round Standard LED (With Stopper)

5ø Round Standard LED (With Stopper)

5ø Round Narrow-directivity LED

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

5ø Round Standard LED (With Stopper)

5ø Inverted-cone LED for Surface illumination

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

5ø Inverted-cone LED for Surface illumination

5ø Round Narrow-directivity LED, Direct mount supported5ø Round Narrow-directivity LED, Direct mount supported

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

5ø Round Standard LED (With Stopper)

5ø Round Standard LED

5ø Inverted-cone LED for Surface illumination

5ø Round Narrow-directivity LED, Direct mount supported

3ø Round Type LED

3ø Round Type LED

3ø Round Type LED

3ø Round Type LED

3ø Round Type LED

3ø Round Type LED

3ø Inverted-cone LED for Surface illumination

3ø Round Type Narrow-directivity LED

3ø Round Type Narrow-directivity LED

3ø Round Type LED

3ø Round Type LED

3ø Inverted-cone LED for Surface illumination

3ø Inverted-cone LED for Surface illumination

3ø Round Type Narrow-directivity LED

3ø Round Type Narrow-directivity LED

3ø Round Type LED

3ø Round Type LED

3ø Inverted-cone LED for Surface illumination

3ø Round Type Narrow-directivity LED

3ø Round Type LED

3ø Inverted-cone LED for Surface illumination

3ø Round Type LED

3ø Round Type LED

3ø Inverted-cone LED for Surface illumination

3ø Round Type Narrow-directivity LED

3ø Round Type Narrow-directivity LED

3ø Round Type LED

3ø Round Type LED

3ø Inverted-cone LED for Surface illumination

3ø Round Type Narrow-directivity LED

3ø Round Type Narrow-directivity LED

SEL1513E

SEL1550CM

SEL1610C

SEL1610W

SEL1615C

SEL1710K

SEL1710KM

SEL1710Y

SEL1713K

SEL1810A

SEL1810AM

SEL1810D

SEL1810DM

SEL1813A

SEL1850AM

SEL1850DM

SEL1910A

SEL1910AM

SEL1910D

SEL1910DM

SEL1913K

SEL1950KM

SEL2110R

SEL2110S

SEL2110W

SEL2210R

SEL2210S

SEL2210W

SEL2213C

SEL2215R

SEL2215S

SEL2410E

SEL2410G

SEL2413E

SEL2413G

SEL2415E

SEL2415G

SEL2510C

SEL2510G

SEL2513E

SEL2515C

SEL2610C

SEL2613CS-S

SEL2710K

SEL2710Y

SEL2713K

SEL2715K

SEL2715Y

SEL2810A

SEL2810D

SEL2813A

SEL2815A

SEL2815D

136

134

134

134

134

134

134

134

136

134

134

134

134

136

134

134

134

134

134

134

136

134

135

135

135

135

135

135

136

136

136

136

136

136

136

136

136

136

136

136

136

135

136

136

136

136

136

136

135

135

136

136

136

Part Number Index in Alphanumeric Order

Part No. Description Page Part No. Description Page Part No. Description Page

Page 150: datashet automotriz

3ø Round Type LED

3ø Round Type LED

3ø Inverted-cone LED for Surface illumination

3ø Round Type Narrow-directivity LED

3ø Round Type Narrow-directivity LED

3ø Round Type LED

4ø Round Type LED

4ø Round Type LED

4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported

4ø Round Type LED

4ø Round Type LED

4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported

4ø Round Type LED

4ø Round Type LED

4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported

4ø Round Type LED

4ø Round Type Wide-directivity LED, Direct mount supported

4ø Round Type LED

4ø Round Type LED

4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported

4ø Round Type LED

4ø Round Type LED

4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported

4ø Round Type LED

4ø Round Type LED

4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported

3ø Round Type LED, Direct mount supported

SEL2910A

SEL2910D

SEL2913K

SEL2915A

SEL2915D

SEL2E10C

SEL4110R

SEL4110S

SEL4114R

SEL4114S

SEL4210R

SEL4210S

SEL4214R

SEL4214S

SEL4410E

SEL4410G

SEL4414E

SEL4414G

SEL4510C

SEL4514C

SEL4710K

SEL4710Y

SEL4714K

SEL4714Y

SEL4810A

SEL4810D

SEL4814A

SEL4814D

SEL4910A

SEL4910D

SEL4914A

SEL4914D

SEL5220S

SEL5223S

SEL5420E

SEL5423E

SEL5520C

SEL5523C

SEL5620C

SEL5723C

SEL5820A

SEL5823A

SEL5920A

SEL5923A

SEL5E20C

SEL5E23C

SEL6110R

SEL6110S

SEL6210R

SEL6210S

SEL6214S

SEL6215S

SEL6410E

3ø Round Type LED, Direct mount supported

3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type Wide-directivity LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported

3ø Round Type LED, Direct mount supported

5ø Round Wide-directivity LED

5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported

5ø Round Wide-directivity LED

5ø Round Narrow-directivity LED, Direct mount supported

4.6 x 5.6ø Egg-shaped LED

5ø Round Wide-directivity LED

5ø Round Wide-directivity LED

5ø Round Narrow-directivity LED, Direct mount supported

5ø Round Wide-directivity LED

5ø Round Narrow-directivity LED, Direct mount supported

3ø Round Type Narrow-directivity LED

3ø Round Type LED

3ø Round Type LED

3ø Round Type LED

3ø Round Type LED

3ø Round Type LED

4ø Round Type LED

5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported

SEL6410G

SEL6413E

SEL6413E-TG

SEL6414E

SEL6414E-TG

SEL6415E

SEL6510C

SEL6510G

SEL6513C

SEL6514C

SEL6515C

SEL6710K

SEL6710Y

SEL6714K

SEL6714W

SEL6715C

SEL6810A

SEL6810D

SEL6814A

SEL6910A

SEL6910D

SEL6914A

SEL6914W

SEL6915A

SEL6E10C

SELS1E10CXM-M

SELS5223C

SELS5923C

SELS5B23C

SELS6B13W

SELS6B14C

SELS6D14C

SELS6E14C-M

SELU1210CXM

SELU1250CM

SELU1253CMKT

SELU1910CXM-S

SELU1D10CXM

SELU1D50CM

SELU1E10CXM

SELU1E50CM

SELU2215R-S

SELU2610C-S

SELU2710C

SELU2B10A-S

SELU2D10C

SELU2E10C

SELU4410CKT-S

SELU5220C-S

SELU5620S-S

SELU5720C

SELU5723C

SELU5820C-S

135

136

136

135

135

135

135

135

136

135

135

135

135

135

135

135

135

135

135

135

135

135

135

135

135

134

136

136

136

136

135

135

135

134

134

134

134

134

134

134

134

136

135

136

135

136

136

135

136

136

136

136

136

136

136

136

136

136

136

134

134

135

135

134

134

135

135

135

135

135

135

135

135

134

134

135

135

134

134

135

135

134

134

135

135

136

136

136

136

136

136

136

136

136

136

136

136

136

136

135

135

135

135

135

135

135

5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported

3ø Round Type LED, Direct mount supported

3ø Round Type Wide-directivity LED, Direct mount supported

Multi-chip LED Module

Multi-chip LED Module

Multi-chip LED Module

Multi-chip LED Module

Multi-chip LED Module

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Ultrafast Recovery Diode(Surface Mount)

Ultrafast Recovery Diode(Surface Mount)

Ultrafast Recovery Diode(Surface Mount)

Rectifier Diode(Surface Mount)

Rectifier Diode(Surface Mount)

Rectifier Diode(Surface Mount)

Rectifier Diode(Surface Mount)

Schottky Barrier Diode(Surface Mount)

Power Zener Diode

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

SELU5B20C

SELU5E23C

SELU6213C-S

SELU6214C

SELU6414G-S

SELU6614C-S

SELU6614W-S

SELU6714C

SELU6910C-S

SELU6914C-S

SEP8WD4001

SEP8WE4001

SEP8WL4001

SEP8WN4001

SEP8WW4001

SFPB-54

SFPB-56

SFPB-59

SFPB-64

SFPB-66

SFPB-69

SFPB-74

SFPB-76

SFPE-64

SFPJ-53

SFPJ-63

SFPJ-73

SFPL-52

SFPL-62

SFPL-64

SFPM-52

SFPM-54

SFPM-62

SFPM-64

SFPW-56

SFPZ-68

SG-9CNR

SG-9CNS

SG-9CZR

SG-9CZS

SG-9LCNR

SG-9LCNS

SG-9LLCNR

SG-9LLCNS

SG-9LLCZR

SG-9LLCZS

SG-10LLR

SG-10LLS

SG-10LLXR

SG-10LLXS

SG-10LLZ23R

SG-10LLZ23S

SG-10LR

136

136

136

135

135

135

135

135

135

135

142

142

142

142

142

130

130

130

130

130

130

130

130

130

130

130

130

130

130

130

130

130

130

130

130

129

127

127

127

127

127

127

127

127

127

127

127

127

127

127

127

127

127

148

Part Number Index in Alphanumeric Order

Part No. Description Page Part No. Description Page Part No. Description Page

Page 151: datashet automotriz

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

Rectifier Diode for Alternator

High-Voltage Rectifier Diode for Ignition Coil

High-Voltage Rectifier Diode for Ignition Coil

High-Voltage Rectifier Diode for Ignition Coil

Linear Regulator IC

Linear Regulator IC

Linear Regulator IC

Linear Regulator IC

Switching Regulator IC

System Regulator IC

High-side Power Switch IC

High-side Power Switch IC

High-side Power Switch IC

High-side Power Switch IC

High-side Power Switch IC

Full-bridge Motor Driver IC

5ø Round Infrade LED

5ø Round Infrade LED

5ø Round Infrade LED

5ø Round Infrade LED, Direct mount supported

5ø Round Infrade LED

5ø Round Infrade LED

5ø Round Infrade LED

5ø Round Infrade LED

3ø Round Infrade LED

3ø Round Infrade LED

5ø Round Infrade LED

5ø Round Infrade LED

5ø Round Infrade LED

Power Zener Diode (Surface Mount)

Power Zener Diode (Surface Mount)

Power Zener Diode (Surface Mount)

Power Zener Diode (Surface Mount)

Power Zener Diode (Surface Mount)

High Voltage Driver IC for HID Lamps

High Voltage Driver IC for HID Lamps

High-side Power Switch IC

High-side Power Switch IC

Stepper-motor Driver IC

MOS FET Array

MOS FET Array

Power transistor Array

High Voltage Driver IC for HID Lamps

MOS FET Array

5ø Round Standard Bicolor LED

5ø Round Standard Bicolor LED

5ø Round Standard Bicolor LED

SG-10LS

SG-10LXR

SG-10LXS

SG-10LZ23R

SG-10LZ23S

SG-14LXZS

SG-14LXZS

SHV-01JN

SHV-05J

SHV-06JN

SI-3001S

SI-3003S

SI-3101S

SI-3102S

SI-3201S

SI-3322S

SI-5151S

SI-5152S

SI-5153S

SI-5154S

SI-5155S

SI-5300

SID1003BQ

SID1010CM

SID1010CXM

SID1050CM

SID1G307C

SID1G313C

SID1K10CM

SID1K10CXM

SID2010C

SID2K10C

SID303C

SID307BR

SID313BP

SJPZ-E18

SJPZ-E27

SJPZ-E33

SJPZ-E36

SJPZ-K28

SLA2402M

SLA2403M

SLA2501M

SLA2502M

SLA4708M

SLA5027

SLA5098

SLA8004

SMA2409M

SMA5113

SML11516C

SML1216C

SML1216W

127

127

127

127

127

127

127

128

128

128

8

10

12

14

22

16

26

28

30

32

34

60

140

140

140

140

140

140

140

140

140

140

140

140

140

129

129

129

129

129

64

68

36

38

56

120

121

99

72

122

137

137

137

5ø Round Standard Bicolor LED

5ø Round Standard Bicolor LED

5ø Round Standard Bicolor LED

3.3 x 6 Rectangular Type Bicolor LED

3.3 x 6 Bow-Shaped Type Bicolor LED

3.3 x 6 Bow-Shaped Type Bicolor LED

3.3 x 6 Rectangular Type Bicolor LED

3.3 x 6 Bow-Shaped Type Bicolor LED

3.3 x 6 Rectangular Type Bicolor LED

3.3 x 6 Bow-Shaped Type Bicolor LED

3.3 x 6 Bow-Shaped Type Bicolor LED

5ø Round Standard Bicolor LED

5ø Round Standard Bicolor LED

5ø Round Standard Bicolor LED

5ø Round Standard Bicolor LED

5ø Round Standard Bicolor LED

3.3 x 6 Bow-Shaped Type Bicolor LED

3.3 x 6 Bow-Shaped Type Bicolor LED

Power transistor Array (Surface Mount)

System Regulator IC

System Regulator IC

Low-side Power Switch IC

High-side Power Switch IC

High-side Power Switch IC

High-side Power Switch IC

Low-side Power Switch IC

Low-side Power Switch IC

High-side Power Switch IC

High-side Power Switch IC

Stepper-motor Driver IC

Full-bridge Motor Driver IC

Power transistor

Power transistor Array

Power transistor Array

Power transistor Array

Power transistor Array

Power transistor Array

Power transistor Array

Power transistor Array

MOS FET Array

MOS FET Array

Power Zener Diode (Surface Mount)

Power Zener Diode (Surface Mount)

Power Zener Diode (Surface Mount)

Power Zener Diode (Surface Mount)

3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition

SML1516W

SML1816W

SML19416W

SML72420C

SML72423C

SML72923C

SML78420C

SML78423C

SML79420C

SML79423C

SMLS79723C

SMLU12D16W

SMLU12E16C

SMLU12E16W

SMLU18D16C

SMLU18D16W-S

SMLU72423C-S

SMLU79423C-S

SPF0001

SPF3004

SPF3006

SPF5002A

SPF5003

SPF5004

SPF5007

SPF5009

SPF5012

SPF5017

SPF5018

SPF7211

SPF7301

SSD103

STA315A

STA335A

STA415A

STA460C

STA461C

STA463C

STA464C

STA508A

STA509A

SZ-10N27

SZ-10N40

SZ-10NN27

SZ-10NN40

TFC561D

TFC562D

137

137

137

137

137

137

137

137

137

137

137

137

137

137

137

137

137

137

100

18

20

50

40

42

44

52

54

46

48

58

62

95

101

102

103

104

105

106

107

123

124

129

129

129

129

125

126

149

Part Number Index in Alphanumeric Order

Part No. Description Page Part No. Description Page

Page 152: datashet automotriz

H1-C01ED0-0607020TAThis document uses 100% recycled paper.

•http://www.sanken-ele.co.jp

ISO 9001/14001 CertifiedSanken products are manufactured and delivered to the customer based on a strict quality and environmental control system established and certified by the ISO 9001/14001 international certification standards.

IProducts: Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp), Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments

•The information contained in this document is correct as of July 2006.This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following: 1. Resell or retransfer these products/technology to any party intending to disturb international peace and security. 2. Use these products/technology yourself for activities disturbing international peace and security. 3. Allow any other party to use these products/technology for activities disturbing international peace and security.Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad.

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SANKEN ELECTRIC CO.,LTD.

Overseas Sales OfficesAsiaSingaporeSanken Electric Singapore Pte. Ltd.150 Beach Road, #14-03 The Gateway West Singapore 189720, SingaporeTel: 65-6291-4755 Fax: 65-6297-1744 ChinaSanken Electric Hong Kong Co., Ltd.Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong KongTel: 852-2735-5262 Fax: 852-2735-5494 Sanken Electric (Shanghai) Co., Ltd.Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, ChinaTel: 86-21-5208-1177 Fax: 86-21-5208-1757 KoreaSanken Electric Korea Co., Ltd.Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, KoreaTel: 82-2-714-3700 Fax: 82-2-3272-2145 TaiwanTaiwan Sanken Electric Co., Ltd.Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.Tel: 886-2-2356-8161 Fax: 886-2-2356-8261

North AmericaAllegro MicroSystems, Inc.115 Northeast Cutoff, Worcester, MA 01606 General InformationTel: 1-508-853-5000 Fax: 1-508-853-3353

EuropeSanken Power Systems (UK) Ltd.Abercynon, Mountain Ash, Mid Glamorgan CF45 4XA, U.K.Tel: 44-1443-742-333 Fax: 44-1443-743-354