7/24/2019 DATASHEETFQA13N50

1/12005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.co

FQA13N50CF Rev. A

FRFETTM

FQA13N50CF500V N-Channel MOSFET

Features

15A, 500V, RDS(on)= 0.48@VGS= 10 V

Low gate charge (typical 43 nC)

Low Crss (typical 20pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

Fast recovery body diode (typical 100ns)

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchilds proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

ciency switched mode power supplies, active power factor cor-

rection, electronic lamp ballasts based on half bridge topology.

Absolute Maximum Ratings

Thermal Characteristics

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TO-3PFQA Series

Symbol Parameter FQA13N50CF Units

VDSS Drain-Source Voltage 500 V

ID Drain Current - Continuous (TC= 25C) 15 A

- Continuous (TC= 100C) 9.5 A

IDM Drain Current - Pulsed (Note 1) 60 A

VGSS Gate-Source Voltage 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 860 mJ

IAR Avalanche Current (Note 1) 15 A

EAR Repetitive Avalanche Energy (Note 1) 21.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC= 25C) 218 W

- Derate above 25C 1.56 W/C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 C

TL Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

300 C

Symbol Parameter Typ Max Units

RJC Thermal Resistance, Junction-to-Case -- 0.58 C/W

RJS Thermal Resistance, Case-to-Sink Typ. 0.24 -- C/W

RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W

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