Datasheet Template - Mouser ElectronicsVc2 or Vc1 set to 0 V (see Function Table below for RF Path)...

TGS2351-SM DC – 6 GHz High Power SPDT Switch

Preliminary Data Sheet: Rev - 01/31/11 - 1 of 13 - Disclaimer: Sub ject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

Applications

• High Power Switching

QFN 4x4mm 24L

Product Features Functional Block Diagram

• Frequency Range: DC – 6 GHz • Power Handling: up to 40 W • Insertion Loss: < 1 dB • Isolation: -40 dB typical • Switching Speed: < 35 ns • Control Voltages: 0 V/-40 V • Dimensions: 4.0 x 4.0 x 1.43 mm

3 & 4

10 & 11

20 & 218

23

Vc2

J1RF In

Vc1

J2RF Out1

J3RF Out2

General Description Pin Configuration

The TriQuint TGS2351-SM is a Single-Pole, Double-Throw (SPDT) Packaged Switch. The TGS2351-SM operates from DC to 6 GHz and is designed using TriQuint’s 0.25um GaN on SiC production process.

The TGS2351-SM typically provides up to 40 W input power handling at control voltages of 0/-40 V. This switch maintains low insertion loss < 1 dB, and high isolation -40 dB typical.

The TGS2351-SM is ideally suited for High Power Switching application.

Lead-free and RoHS compliant Evaluation Boards are available upon request.

Pin # Symbol 1, 2, 5, 6, 7, 9, 12, 13, 18,

19, 22, 24, 25 GND

3 and 4 RF In 8 Vc2

10 and 11 RF Out2 14, 15, 16, 17 N/C

20 and 21 RF Out1 23 Vc1

Ordering Information Part No. ECCN Description TGS2351-SM EAR99 DC – 6 GHz High Power

SPDT Switch



Specifications

Absolute Maximum Ratings

Parameter Rating Control Voltage, Vc - 50 V Control Current, Ic -1 to 7.8 mAPower Dissipation, Pdiss 10 W RF Input Power, CW, 50Ω,T = 25ºC 47 dBm Channel Temperature, Tch 275 oC Mounting Temperature (30 Seconds) 260 oC

Storage Temperature -40 to 150 oC Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied.

Recommended Operating Conditions

Parameter Min Typical Max UnitsVc1 -40 / 0 V Vc2 0 / -40 V Ic1 / Ic2 -0.4 to 0.1 mA

Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25ºC, Vc1 = -40/0 V, Vc2 = 0/-40 V,see Function Table at Application Circuit on page 7 Parameter Min Typical Max Units Operational Frequency Range DC 6 GHz Control Current (Ic1/ Ic2) -0.9 0.1 mA Insertion Loss (On-State) < 1 dB Input Return Loss – On-State (Common Port RL) 20 dB Output Return Loss – On-State (Switched Port RL) 20 dB Isolation (Off-State) -40 dB Output Return Loss – Off-Sate (Isolated Port RL) 2.5 dB Input Power 1/ 46 dBm Insertion Loss Temperature Coefficient -0.003 dB/°C Switching Speed - On 31 ns Switching Speed - Off 18 ns 1/ The Input Power will be reduced if < 10 MHz.


Specifications (cont.)

Thermal and Reliability Information

Parameter Condition Rating Thermal Resistance, θJC, measured to back of package Tbase = 85 °C θJC = 6.1 °C/W

Channel Temperature (Tch), and Median Lifetime (Tm) Tbase = 85 °C, Vc1 = 0 V, Vc2 = -40 V, Pin = 40 W, Pdiss = 5.3 W

Tch = 118 °C Tm = 1.4 E+9 Hours

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

1.E+11

1.E+12

1.E+13

1.E+14

1.E+15

25 50 75 100 125 150 175 200 225 250 275

Med

ian

Life

time,

Tm

(H

ours

)

Channel Temperature, Tch (°C)

Median Lifetime (Tm) vs. Channel Temperature (Tch)

FET7



Typical Performance


-2.0-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.20.0

0 1 2 3 4 5 6 7 8 9 10

Inse

rtion

Los

s (d

B)

Frequency (GHz)

Insertion Loss (On-State) vs. FrequencyVc1 = -40 V, Vc2 = 0 V, +25 0C

-50-45-40-35-30-25-20-15-10

-50

0 1 2 3 4 5 6 7 8 9 10

On-

Stat

e R

etur

n Lo

ss (d

B)

Frequency (GHz)

Return Loss (On-State) vs. FrequencyVc1 = -40 V, Vc2 = 0 V, +25 0C

IRLORL

-90-80-70-60-50-40-30-20-10

0

0 1 2 3 4 5 6 7 8 9 10

Isol

atio

n (d

B)

Frequency (GHz)

Isolation (Off-State) vs. FrequencyVc1 = 0 V, Vc2 = -40 V, +25 0C

-50-45-40-35-30-25-20-15-10

-50

0 1 2 3 4 5 6 7 8 9 10

Off-

Stat

e R

etur

n Lo

ss (d

Bm)

Frequency (GHz)

Return Loss (Off-State) vs. FrequencyVc1 = 0 V, Vc2 = -40 V, +25 0C

IRLORL

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

34 36 38 40 42 44 46

Loss

Com

pres

sion

(dB

)

Input Power (dBm)

Loss Compression vs. Pin vs. FrequencyVc1 = -40 V, Vc2 = 0 V, +25 0C

1 GHz2 GHz3 GHz4 GHz

0.00

0.01

0.02

0.03

0.04

0.05

34 36 38 40 42 44 46

Con

trol C

urre

nt, I

c (m

A)

Input Power (dBm)

Control Current vs. Pin Vc1 = -40 V, Vc2 = 0 V, Frequency = 3 GHz, +25 0C


Typical Performance (cont.)


-2.0-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.20.0

0 1 2 3 4 5 6 7 8 9 10

Inse

rtion

Los

s (d

B)

Frequency (GHz)

Insertion (On-State) vs. Freq vs. TempVc1 = -40 V, Vc2 = 0 V

-55 C+25 C+85 C

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

34 36 38 40 42 44 46

Loss

Com

pres

sion

(dB

)

Input Power (dBm)

Loss Compression vs. Pin vs. TempVc1 = -40 V, Vc2 = 0 V, Frequency = 3 GHz

-55 C+25 V+85 C

-90-80-70-60-50-40-30-20-10

0

1 2 3 4 5 6 7 8 9 10

Isol

atio

n (d

B)

Frequency (GHz)

Isolation (Off-State) vs. Freq vs. TempVc1 = 0 V, Vc2 = -40 V

-55 C+25 C+85 C

-5

-4

-3

-2

-1

0

1

34 36 38 40 42 44 46

Loss

Com

pres

sion

(dB

)

Input Power (dBm)

Loss Compression vs. Pin vs. VcVc2 = 0 V, Frequency = 3 GHz, +25 0C

Vc1 = -40 VVc1 = -30 VVc1 = -20 V

-2.0-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.20.0

0 1 2 3 4 5 6 7 8 9 10

Inse

rtion

Los

s (d

B)

Frequency (GHz)

Insertion Loss (On-State) vs. Freq vs. VcVc2 = 0 V, +25 0C

Vc1 = -40 VVc1 = -30 VVc1 = -20 V

-90-80-70-60-50-40-30-20-10

0

1 2 3 4 5 6 7 8 9 10

Isol

atio

n (d

B)

Frequency (GHz)

Isolation (Off-State) vs. Freq vs. VcVc1 = 0 V, +25 0C

Vc2 = -40 VVc2 = -30 VVc2 = -20 V


Typical Performance (cont.)

Switching Speed - On < 31 nsVc = 0/-20 V, Freq = 500 mHz, Pin = 4dBm, +25 0C

Switching Speed - Off < 18 nsVc = 0/-20 V, Freq = 500 mHz, Pin = 4dBm, +25 0C


TGS2351-SMDC – 6 GHz High Power SPDT Switch

Application Circuit

J2RF Out1

Vc1-40 V / 0 V

TGS2351-SM

1

2

3

4

5

6

J1RF In

18

17

16

15

14

13

Vc20 V / -40 V

J3RF Out2

7 8 9 10 11 12

24 23 22 21 20 19

This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused RF Out port with a 50 Ohm load.

Bias-up Procedure Bias-down Procedure Vc1 or Vc2 set to -40 V (see Function Table below for RF Path) Turn off RF supply Vc2 or Vc1 set to 0 V (see Function Table below for RF Path) Turn Vc1 or Vc2 to 0V Apply RF signal to RF Input Turn Vc2 or Vc1 to 0 V

Function Table

RF Path State Vc1 Vc2 RF In to RF Out1 (50 Ohm load to RF Out2) On-State (Insertion Loss) 0 V -40 V

Off-State (Isolation) -40 V 0 V

RF In to RF Out2 (50 Ohm load to RF Out1) On-State (Insertion Loss) -40 V 0 V Off-State (Isolation) 0 V -40 V



Pin Description

, GND1

2

3

4

5

6

25

, GND

, RF In

, RF In

, GND

, GND

, GND18

17

16

15

14

13

, N/C

, N/C

, N/C

, N/C

, GND

, GN

D7 8 9 10 11 12

, Vc2

, GN

D

, RF

Out

2

, RF

Out

2

, GN

D

, GN

D24 23 22 21 20 19

, Vc1

, GN

D

, RF

Out

1

, RF

Out

1

, GN

DPIN #1IDENTIFICATION

Pin Symbol Description 1, 2, 5, 6, 7, 9, 12, 13, 18, 19, 22, and 24 GND No internal connection; must be grounded on PCB

3 and 4 RF In Input, matched to 50 ohms, DC coupled

9, 22 GND Connected to GND paddle (pin 25) must be grounded on PCB to improve isolation

8 Vc2 Control voltage #2; see Application Circuit on page 7 as an example 10 and 11 RF Out2 Output #2, matched to 50 ohms, DC coupled 14, 15, 16, and 17 N/C No internal connection; can be grounded or left open 20 and 21 RF Out1 Output #1, matched to 50 ohms, DC coupled 23 Vc1 Control voltage #1; see Application Circuit on page 7 as an example

25 GND Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 11 for suggested footprint.



Applications Information PC Board Layout Top RF layer is 0.010” thick Rogers 4350, єr = 3.66. Metal layers are 0.5-oz copper. Microstrip 50 Ω line detail: width = 0.0217”. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended.

For further technical information, refer to the TGS2351-SM Product Information page.

RF Out1

RF In

RF Out2


http://www.triquint.com/prodserv/more_info/proddisp.aspx?prod_id=TGS2351-SM


Mechanical Information Package Information and Dimensions All dimensions are in millimeters.

TOP VIEW

SIDE VIEW

BOTTOM VIEW

4.000±0.075

4.000±0.075

PIN #1 INDICATORBY MARKING

2.400±0.075

2.400±0.075

0.500±0.075

0.1000.250±0.075

1.43±0.075

0.300±0.050

0.450±0.075

0.275PIN #1

IDENTIFICATION

0.700±0.075

This package is lead-free/RoHS-compliant with a Aluminum Nitride base (AlN), and the plating material on the leads is Electroless Gold (Au) over Electroless nickel (Ni). It is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering processes. The TGS2351-SM will be marked with the “2351” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “MXXX” is a supplier code and partial batch ID.



Mechanical Information (cont.) Mounting Configuration

.406

.406

All dimensions are in millimeters (inches). Notes: 1. A heatsink underneath the area of the PCB for the mounted device

is recommended for proper thermal operation. 2. Ground / thermal vias are critical for the proper performance of this

device. Vias have a final plated thru diameter of .406 mm (.016”).



Product Compliance Information

ESD Information

ESD Rating: TBD Value: Passes ≥ TBD min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114

Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free

MSL Rating Level TBD at +260 °C convection reflow The part is rated Moisture Sensitivity Level TBD at 260°C per JEDEC standard IPC/JEDEC J-STD-020.

ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile




Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.972.994.8465 Email: [email protected] Fax: +1.972.994.8504 For technical questions and application information: Email: [email protected]

Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright © 2011 TriQuint Semiconductor, Inc. All rights reserved.

http://www.triquint.com/

mailto:[email protected]

mailto:[email protected]

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