TO-247

12

3

Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A• Tight parameter distribution• Safe paralleling• Positive VCE(sat) temperature coefficient• Low thermal resistance• Very fast soft recovery antiparallel diode

Applications• Photovoltaic inverters• High frequency converters

DescriptionThis device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents anoptimum compromise between conduction and switching loss to maximize theefficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer parallelingoperation.

Product status link

STGW40H65DFB

Product summary

Order code STGW40H65DFB

Marking GW40H65DFB

Package TO-247

Packing Tube

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

STGW40H65DFB

Datasheet

DS9533 - Rev 9 - June 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 650 V

ICContinuous collector current at TC = 25 °C 80

AContinuous collector current at TC = 100 °C 40

ICP (1) Pulsed collector current 160 A

VGEGate-emitter voltage ±20

VTransient gate-emitter voltage ±30

IFContinuous forward current at TC = 25 °C 80

AContinuous forward current at TC = 100 °C 40

IFP (1) Pulsed forward current 160 A

PTOT Total power dissipation at TC = 25 °C 283 W

TSTG Storage temperature range - 55 to 150°C

TJ Operating junction temperature range - 55 to 175

1. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.53

°C/WRthJC Thermal resistance junction-case diode 1.14

RthJA Thermal resistance junction-ambient 50

STGW40H65DFBElectrical ratings

DS9533 - Rev 9 page 2/16

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitterbreakdown voltage VGE = 0 V, IC = 2 mA 650 V

VCE(sat)Collector-emittersaturation voltage

VGE = 15 V, IC = 40 A 1.6 2

VVGE = 15 V, IC = 40 A,TJ = 125 °C 1.7

VGE = 15 V, IC = 40 A,TJ = 175 °C 1.8

VF Forward on-voltage

IF = 40 A 1.7 2.45

VIF = 40 A, TJ = 125 °C 1.4

IF = 40 A, TJ = 175 °C 1.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA

IGESGate-emitter leakagecurrent VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

- 5412 -

pFCoes Output capacitance - 198 -

CresReverse transfercapacitance - 107 -

Qg Total gate chargeVCC = 520 V, IC = 40 A, VGE = 0to 15 V (see Figure 28. Gatecharge test circuit)

- 210 -

nCQge Gate-emitter charge - 39 -

Qgc Gate-collector charge - 82 -

STGW40H65DFBElectrical characteristics

DS9533 - Rev 9 page 3/16

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 400 V, IC = 40 A,VGE = 15 V, RG = 5 Ω (seeFigure 27. Test circuit forinductive load switching)

40 -ns

tr Current rise time 13 -

(di/dt)on Turn-on current slope 2413 - A/µs

td(off) Turn-off-delay time 142 -ns

tf Current fall time 27 -

Eon (1) Turn-on switching energy 498 -

µJEoff (2) Turn-off switching energy 363 -

Ets Total switching energy 861 -

td(on) Turn-on delay time

VCE = 400 V, IC = 40 A,VGE = 15 V, RG = 5 Ω TJ = 175 °C(see Figure 27. Test circuit forinductive load switching)

38 -ns

tr Current rise time 14 -

(di/dt)on Turn-on current slope 2186 - A/µs

td(off) Turn-off-delay time 141 -ns

tf Current fall time 61 -

Eon (1) Turn-on switching energy 1417 -

µJEoff (2) Turn-off switching energy 764 -

Ets Total switching energy 2181 -

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time

IF = 40 A, VR = 400 V, VGE = 15 Vdi/dt = 100 A/µs (see Figure 27. Test circuit for inductive loadswitching)

- 62 - ns

Qrr Reverse recovery charge - 99 - nC

Irrm Reverse recovery current - 3.3 - A

dIrr/dtPeak rate of fall ofreverse recovery currentduring tb

- 187 - A/µs

Err Reverse recovery energy - 68 - µJ

trr Reverse recovery time

IF = 40 A, VR = 400 V,VGE = 15 V, TJ = 175 °C di/dt = 100 A/µs (see Figure 27. Test circuit for inductive loadswitching)

- 310 - ns

Qrr Reverse recovery charge - 1550 - nC

Irrm Reverse recovery current - 10 - A

dIrr/dtPeak rate of fall ofreverse recovery currentduring tb

- 70 - A/µs

Err Reverse recovery energy - 674 - µJ

STGW40H65DFBElectrical characteristics

DS9533 - Rev 9 page 4/16

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

IGBT230216EWF6GPDT

250

200

150

100

50

00 25 50 75 100 125 150

PTOT (W)

TC (°C)

VGE = 15 V, TJ ≤ 175 °C

Figure 2. Collector current vs case temperature

IGBT230216EWF6GCCT

80

60

40

20

00 25 50 75 100 125 150

IC (A)

TC (°C)

VGE = 15 V, TJ ≤ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

IGBT230216EWF6GOC25

140

120

100

80

60

40

20

00 1 2 3 4

IC (A)

VCE (V)

VGE = 15 V13 V

11 V

9 V

Figure 4. Output characteristics (TJ = 175 °C)

IGBT230216EWF6GOC175

140

120

100

80

60

40

20

00 1 2 3 4

IC (A)

VCE (V)

VGE = 15 V

13 V

11 V

9 V

7 V

Figure 5. VCE(sat) vs junction temperature

IGBT230216EWF6GVCET

2.4

2.2

2.0

1.8

1.6

1.4

1.2-75 -25 25 75 125 175

VCE(SAT) (V)

TJ (°C)

VGE = 15 V IC = 80 A

IC = 40 A

IC = 20 A

Figure 6. VCE(sat) vs collector current

IGBT230216EWF6GVCEC

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.00 10 20 30 40 50 60 70

VCE(SAT) (V)

IC (A)

VGE = 15 VTJ = 175 °C

TJ = 25 °C

TJ = -40 °C

STGW40H65DFBElectrical characteristics (curves)

DS9533 - Rev 9 page 5/16

Figure 7. Collector current vs switching frequency

IGBT230216EWF6GCCS

100

80

60

40

20

010 0 10 1 10 2

IC (A)

f (kHz)

Rectangular current shape(duty cycle = 0.5, VCC = 400 VRG = 5 Ω, VGE = 0/15 V , TJ = 175 °C

TC = 80 °C

TC = 100 °C

Figure 8. Forward bias safe operating area

IGBT230216EWF6GFSOA

10 2

10 1

10 0

10 0 10 1 10 2

IC (A)

VCE (V)

single pulse, TC = 25°CTJ ≤ 175 °C, VGE = 15 V

tp = 10 µs

tp = 100 µs

tp = 1 ms

Figure 9. Transfer characteristics

IGBT230216EWF6GTCH

140

120

100

80

60

40

20

06 7 8 9 10

IC (A)

VGE (V)

VCE = 5 V

TJ = 175 °C

TJ = 25 °C

TJ = 25 °C

TJ = 175 °C

Figure 10. Diode VF vs forward current

IGBT230216EWF6GDVF

2.3

2.0

1.7

1.4

1.1

0.820 30 40 50 60 70 80

VF (V)

IF (A)

TJ = -40 °C

TJ = 25 °C

TJ = 175 °C

Figure 11. Normalized VGE(th) vs junction temperature

IGBT230216EWF6GNVGE

1.2

1.0

0.8

0.6

0.4-75 -25 25 75 125 175

VGE(th) (Norm.)

TJ (°C)

VCE = VGE , IC = 1 mA

Figure 12. Normalized V(BR)CES vs junction temperature

IGBT230216EWF6GNVBR

1.12

1.08

1.04

1.00

0.96

0.92

0.88-75 -25 25 75 125 175

V(BR)CES (Norm.)

TJ (°C)

IC = 2 mA

STGW40H65DFBElectrical characteristics (curves)

DS9533 - Rev 9 page 6/16

Figure 13. Capacitance variations

IGBT230216EWF6GCVR

10 3

10 2

10 1

10 -1 10 0 10 1 10 2

C (pF)

VCE (V)

CRES

COES

CIES

Figure 14. Gate charge vs gate-emitter voltage

IGBT230216EWF6GGCGE

15

10

5

00 40 80 120 160 200

VGE (V)

Qg (nC)

VCC = 520 V, IC = 40 A

Figure 15. Switching energy vs collector current

IGBT230216EWF6GSLC

3000

2400

1800

1200

600

00 10 20 30 40 50 60 70

E (µJ)

IC (A)

VCC = 400 V, RG = 5 ΩVGE = 15 V, TJ = 175 °C

Eoff

Eon

Figure 16. Switching energy vs gate resistance

IGBT230216EWF6GSLG

2000

1600

1200

800

4000 4 8 12 16 20

E (µJ)

RG (Ω)

VCC = 400 V, IC = 40 AVGE = 15 V, TJ = 175 °C

Eoff

Eon

Figure 17. Switching energy vs temperature

IGBT230216EWF6GSLT

1200

800

400

0-75 -25 25 75 125 175

E(μJ)

TJ (°C)

VCC = 400 V, IC = 40 ARG = 5 Ω, VGE = 15 V

Eoff

Eon

Figure 18. Switching energy vs collector emitter voltage

IGBT230216EWF6GSLV

2000

1600

1200

800

400

0150 200 250 300 350 400 450 500

E (µJ)

VCE (V)

IC = 40 A, RG = 5 ΩVGE = 15 V, TJ = 175 °C

Eoff

Eon

STGW40H65DFBElectrical characteristics (curves)

DS9533 - Rev 9 page 7/16

Figure 19. Switching times vs collector currentIGBT230216EWF6GSTC

10 2

10 1

10 00 10 20 30 40 50 60 70

t (ns)

IC (A)

VCC = 400 V, VGE = 15 V RG = 5 Ω, TJ = 175 °C

t d(off)

t d(on)

tr

tf

Figure 20. Switching times vs gate resistanceIGBT230216EWF6GSTR

10 2

10 10 4 8 12 16 20

t (ns)

RG (Ω)

VCC = 400 V, VGE = 15 V IC = 40 A, TJ = 175 °C

tf

td(off)

tr

td(on)

Figure 21. Reverse recovery current vs diode currentslope

IGBT230216EWF6GRRC

80

60

40

20

00 500 1000 1500 2000 2500

Irrm (A)

di/dt (A/µs)

Vr = 400 V, IF = 40 A

TJ = 175 °C

TJ = 25 °C

Figure 22. Reverse recovery time vs diode current slope

IGBT230216EWF6GRRT

300

250

200

150

100

50

00 500 1000 1500 2000 2500

trr (ns)

di/dt (A/µs)

Vr = 400 V, IF = 40 A

TJ = 175 °C

TJ = 25 °C

Figure 23. Reverse recovery charge vs diode currentslope

IGBT230216EWF6GRRQ

4000

3000

2000

1000

00 500 1000 1500 2000 2500

Qrr (nC)

di/dt (A/µs)

Vr = 400 V, IF = 40 A

TJ = 175 °C

TJ = 25 °C

Figure 24. Reverse recovery energy vs diode currentslope

IGBT230216EWF6GRRE

1200

900

600

300

00 500 1000 1500 2000 2500

Err (µJ)

di/dt (A/µs)

Vr = 400 V, IF = 40 A

TJ = 175 °C

TJ = 25 °C

STGW40H65DFBElectrical characteristics (curves)

DS9533 - Rev 9 page 8/16

Figure 25. Thermal impedance for IGBT

ZthTO2T_A

10 -1

10 -2

10 -5 10 -4 10 -3 10 -2 10 -1

K

tp (s)

δ = 0.5

δ = 0.2

δ = 0.1 δ = 0.05

δ = 0.02

δ = 0.01

Single pulse

Figure 26. Thermal impedance for diode

STGW40H65DFBElectrical characteristics (curves)

DS9533 - Rev 9 page 9/16

3 Test circuits

Figure 27. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 28. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 29. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

Figure 30. Diode reverse recovery waveform

t

GADG180720171418SA

10%

VRRM

dv/dt

di/dt

IRRM

IF

trr

ts tf

Qrr

IRRM

STGW40H65DFBTest circuits

DS9533 - Rev 9 page 10/16

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

STGW40H65DFBPackage information

DS9533 - Rev 9 page 11/16

4.1 TO-247 package information

Figure 31. TO-247 package outline

0075325_9

STGW40H65DFBTO-247 package information

DS9533 - Rev 9 page 12/16

Table 7. TO-247 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

ØP 3.55 3.65

ØR 4.50 5.50

S 5.30 5.50 5.70

STGW40H65DFBTO-247 package information

DS9533 - Rev 9 page 13/16

Revision history

Table 8. Document revision history

Date Revision Changes

12-Mar-2013 1 Initial release.

09-Sep-2013 2

– Modified: VCE(sat) values in cover page

– Modified: VCE(sat), VF and VGE(th) typical and max values in Table 4

– Modified: entire typical values in Table 5, 6 and 7

– Minor text changes

– Added: Section 2.1: Electrical characteristics (curves)

11-Sep-2013 3 – Updated TSTG value in Table 2: Absolute maximum ratings.

23-Sep-2013 4 – Updated units in Table 6: IGBT switching characteristics (inductive load).

31-Oct-2013 5 Updated VCE(sat) in Table 4: Static characteristics.

24-Feb-2014 6 Updated title and description in cover page.

23-Feb-2016 7

Throughout document:

- added TO-247 long leads package details

- text and formatting changes

In "Electrical ratings":

- updated "Absolute maximum ratings" table.

In "Electrical characteristics":

- updated "Static characteristics", "IGBT switching characteristics (inductive load)" and "Diodeswitching characteristics (inductive load)" tables.

Updated "Electrical characteristics (curves)" section.

Updated "Package information" section.

07-Jun-2016 8 The part numbers STGWA40H65DFB and STGWT40H65DFB have been moved to aseparate datasheet.

19-Jun-2019 9

Removed maturity status indication from cover page. The document status is production data.

Updated title in cover page.

Updated Table 1. Absolute maximum ratings.

Minor text changes.

STGW40H65DFB

DS9533 - Rev 9 page 14/16

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

STGW40H65DFBContents

DS9533 - Rev 9 page 15/16

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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STGW40H65DFB

DS9533 - Rev 9 page 16/16