Datasheet / Datenblatt IPx80R1K0CE · • LED Lighting for retrofit applications in QR Flyback...

MOSFETMetalOxideSemiconductorFieldEffectTransistor

CoolMOS™CE800VCoolMOS™CEPowerTransistorIPx80R1K0CE

DataSheetRev.2.1Final

PowerManagement&Multimarket

2

800VCoolMOS™CEPowerTransistor

IPD80R1K0CE,IPU80R1K0CE

Rev.2.1,2013-07-18Final Data Sheet

tab

12

3

DPAK

1 2

tab

3

IPAK

DrainPin 2

GatePin 1

SourcePin 3

1DescriptionCoolMOS™CEisarevolutionarytechnologyforhighvoltagepowerMOSFETs.Thehighvoltagecapabilitycombinessafetywithperformanceandruggednesstoallowstabledesignsathighestefficiencylevel.CoolMOS™800VCEcomeswithaselectedpackagechoiceofferingthebenefitofreducedsystemcostsandhigherpowerdensitydesigns.

Features1)•Highvoltagetechnology•Extremedv/dtrated•Highpeakcurrentcapability•Lowgatecharge•Loweffectivecapacitances•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)•Pb-freeleadplating;RoHScompliant;availablewithhalogenfreeandnon-halogenfreemoldcompound1)

Benefits•Increasedpowerdensitysolutionsduetosmallerpackage•Systemcost/sizesavingsduetoreducedcoolingrequirements•Highersystemreliabilityduetolowoperatingtemperatures

Applications•LEDLightingforretrofitapplicationsinQRFlybacktopology

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 800 V

RDS(on),max 0.95 Ω

Qg,typ 31 nC

ID,pulse 18 A

VGS(th),typ 3 V

CO(tr),typ 69 pF

Type/OrderingCode Package Marking RelatedLinksIPD80R1K0CE PG-TO 252

IPU80R1K0CE PG-TO 2518R1K0CE see Appendix A

1) Halogen free version is available with OPN: IPD80R1K0CEAT

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TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4




2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current 1) ID --

--

5.73.6 A TC=25°C

TC=100°C

Pulsed drain current 2) ID,pulse - - 18 A TC=25°C

Avalanche energy, single pulse EAS - - 230 mJ ID=1.6A;VDD=50V

Avalanche energy, repetitive EAR - - 0.20 mJ ID=1.6A;VDD=50V

Avalanche current, repetitive IAR - - 1.6 A -

MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...640V

Gate source voltage VGS-20-30

--

2030 V static;

AC (f>1 Hz)

Power dissipation (non FullPAK) TO-252,TO-251 Ptot - - 83 W TC=25°C

Operating and storage temperature Tj,Tstg -55 - 150 °C -

Continuous diode forward current IS - - 5.7 A TC=25°C

Diode pulse current2) IS,pulse - - 18 A TC=25°C

Reverse diode dv/dt 3) dv/dt - - 4 V/ns VDS=0...400V,ISD≤IS,Tj=25°C

Maximum diode commutation speed dif/dt - - 400 A/µs VDS=0...400V,ISD≤IS,Tj=25°C

3Thermalcharacteristics

Table3ThermalcharacteristicsDPAK,IPAKValues


Thermal resistance, junction - case RthJC - - 1.5 °C/W -

Thermal resistance, junction - ambient 4) RthJA--

-35

62- °C/W

SMD version, device on PCB,minimal footprintSMD version, device on PCB,6cm2 cooling area4)

Soldering temperature, wave- &reflowsoldering allowed Tsold - - 260 °C reflow MSL 1

1) Limited by Tj max. 2) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG 4) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection. PCBis vertical without air stream cooling.

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4Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=0.25mA

Gate threshold voltage V(GS)th 2.1 3 3.9 V VDS=VGS,ID=0.25mA

Zero gate voltage drain current IDSS --

-50

10- µA VDS=800V,VGS=0V,Tj=25°C

VDS=800V,VGS=0V,Tj=150°C

Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.82.2

0.95- Ω VGS=10V,ID=3.6A,Tj=25°C

VGS=10V,ID=3.6A,Tj=150°C

Gate resistance RG - 1.2 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 785 - pF VGS=0V,VDS=100V,f=1MHz

Output capacitance Coss - 33 - pF VGS=0V,VDS=100V,f=1MHz

Effective output capacitance, energyrelated 1) Co(er) - 26 - pF VGS=0V,VDS=0...480V

Effective output capacitance, time related2)

Co(tr) - 69 - pF ID=constant,VGS=0V,VDS=0...480V

Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=0/10V,ID=5.7A,RG=15Ω

Rise time tr - 15 - ns VDD=400V,VGS=0/10V,ID=5.7A,RG=15Ω

Turn-off delay time td(off) - 72 - ns VDD=400V,VGS=0/10V,ID=5.7A,RG=15Ω

Fall time tf - 8 - ns VDD=400V,VGS=10V,ID=5.7A,RG=15Ω

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 4 - nC VDD=640V,ID=5.7A,VGS=0to10V

Gate to drain charge Qgd - 15 - nC VDD=640V,ID=5.7A,VGS=0to10V

Gate charge total Qg - 31 - nC VDD=640V,ID=5.7A,VGS=0to10V

Gate plateau voltage Vplateau - 5.5 - V VDD=640V,ID=5.7A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS

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Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 1 1.2 V VGS=0V,IF=5.7A,Tj=25°C

Reverse recovery time trr - 520 - ns VR=400V,IF=5.7A,diF/dt=100A/µs

Reverse recovery charge Qrr - 5 - µC VR=400V,IF=5.7A,diF/dt=100A/µs

Peak reverse recovery current Irrm - 18 - A VR=400V,IF=5.7A,diF/dt=100A/µs

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5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

10

20

30

40

50

60

70

80

90

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-1

100

101

102

1 µs10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.10.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

Diagram4:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 20 250

5

10

15

20

20 V

10 V

6.5 V

6 V

5.5 V

5 V

ID=f(VDS);Tj=25°C;tp=10µs;parameter:VGS

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Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 20 250

3

6

9

12

20 V

10 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=150°C;tp=10µs;parameter:VGS

Diagram6:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 3 6 91.4

1.8

2.2

2.6

3.0

3.4

3.8

4.2

4.5 V 5 V 5.5 V 6 V

10 V

20 V

RDS(on)=f(ID);Tj=150°C;parameter:VGS

Diagram7:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-60 -20 20 60 100 140 1800.0

0.4

0.8

1.2

1.6

2.0

2.4

98 % typ

RDS(on)=f(Tj);ID=3.6A;VGS=10V

Diagram8:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 100

5

10

15

20

150 °C

25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;tp=10µs;parameter:Tj

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Diagram9:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 400

2

4

6

8

10

160 V 640 V

VGS=f(Qgate);ID=5.7Apulsed;parameter:VDD

Diagram10:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.010-1

100

101

102

150 °C 25 °C

25°C (98%)

150°C (98%)

IF=f(VSD);tp=10µs;parameter:Tj

Diagram11:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

50

100

150

200

250

EAS=f(Tj);ID=1.6A;VDD=50V

Diagram12:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 180680

720

760

800

840

880

920

960

VBR(DSS)=f(Tj);ID=0.25mA

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Diagram13:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram14:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 500 600 700 8000

1

2

3

4

5

6

Eoss=f(VDS)

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6TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

VD

V(BR)DS

IDVDS

VDSID

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7PackageOutlines

Figure1OutlinePG-TO252,dimensionsinmm/inches

13




Figure2OutlinePG-TO251,dimensionsinmm/inches

14




8AppendixA

Table11RelatedLinks

• IFXCoolMOSWebpage:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8

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RevisionHistoryIPD80R1K0CE, IPU80R1K0CE

Revision:2013-07-18,Rev.2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2013-06-24 Release of final version

2.1 2013-07-18 update to halogen free mold compound

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Edition2011-08-01PublishedbyInfineonTechnologiesAG81726München,Germany©2011InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Datasheet / Datenblatt IPx80R1K0CE · • LED Lighting for retrofit applications in QR Flyback...

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