datasheet (1)

IKW75N60T TrenchStop Series q

Power Semiconductors 1 Rev. 2.4 May 06

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s Positive temperature coefficient in VCE(sat) very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: Frequency Converters Uninterrupted Power Supply Type VCE IC VCE(sat),Tj=25C Tj,max Marking Package

IKW75N60T 600V 75A 1.5V 175C K75T60 PG-TO-247-3-21

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VC E 600 V DC collector current, limited by Tjmax TC = 25C TC = 100C

IC 802) 75

Pulsed collector current, tp limited by Tjmax IC p u l s 225 Turn off safe operating area (VCE 600V, Tj 175C) - 225 Diode forward current, limited by Tjmax TC = 25C TC = 100C

IF 802)

75

Diode pulsed current, tp limited by Tjmax IF p u l s 225

A

Gate-emitter voltage VG E 20 V Short circuit withstand time3)

VGE = 15V, VCC 400V, Tj 150C tS C 5 s

Power dissipation TC = 25C P t o t 428 W Operating junction temperature T j -40...+175 Storage temperature T s t g -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

C

1) J-STD-020 and JESD-022 2) Value limited by bondwire 3) Allowed number of short circuits: 1s.

G

C

E

PG-TO-247-3-21

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Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic IGBT thermal resistance, junction case

R t h J C 0.35

Diode thermal resistance, junction case

R t h J C D 0.6

Thermal resistance, junction ambient

R t h J A 40

K/W

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Value Parameter Symbol Conditions

min. Typ. max. Unit

Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S VG E=0V, IC=0.2mA 600 - - Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=75A

T j=25C T j=175C

- -

1.5 1.9

2.0 -

Diode forward voltage

VF VG E=0V, IF=75A T j=25C T j=175C

- -

1.65 1.6

2.0 -

Gate-emitter threshold voltage VG E ( t h ) IC=1.2mA,VC E=VG E 4.1 4.9 5.7

V

Zero gate voltage collector current

IC E S VC E=600V, VG E=0V T j=25C T j=175C

- -

- -

40 1000

A

Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 100 nA Transconductance g f s VC E=20V, IC=75A - 41 - S Integrated gate resistor RG i n t - Dynamic Characteristic Input capacitance C i s s - 4620 - Output capacitance Co s s - 288 - Reverse transfer capacitance C r s s

VC E=25V, VG E=0V, f=1MHz - 137 -

pF

Gate charge QG a t e VC C=480V, IC=75AVG E=15V

- 470 - nC

Internal emitter inductance measured 5mm (0.197 in.) from case

LE - 13 - nH

Short circuit collector current1) IC ( S C ) VG E=15V, tS C5s VC C = 400V, T j 150C

- 687.5 - A

1) Allowed number of short circuits: 1s.

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Switching Characteristic, Inductive Load, at Tj=25 C


min. typ. max. Unit

IGBT Characteristic Turn-on delay time td ( o n ) - 33 - Rise time t r - 36 - Turn-off delay time td ( o f f ) - 330 - Fall time t f - 35 -

ns

Turn-on energy Eo n - 2.0 - Turn-off energy Eo f f - 2.5 - Total switching energy E t s

T j=25C, VC C=400V, IC=75A,VG E=0/15V, RG=5 , L 1 )=100nH, C 1 )=39pF Energy losses include tail and diode reverse recovery. - 4.5 -

mJ

Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 121 - ns Diode reverse recovery charge Q r r - 2.4 - C Diode peak reverse recovery current I r r m - 38.5 - A Diode peak rate of fall of reverse recovery current during tb

di r r /d t

T j=25C, VR=400V, IF=75A, diF /d t=1460A/s

- 921 - A/s

Switching Characteristic, Inductive Load, at Tj=175 C


min. typ. max. Unit

IGBT Characteristic Turn-on delay time td ( o n ) - 32 - Rise time t r - 37 - Turn-off delay time td ( o f f ) - 363 - Fall time t f - 38 -

ns

Turn-on energy Eo n - 2.9 - Turn-off energy Eo f f - 2.9 - Total switching energy E t s

T j=175C, VC C=400V, IC=75A,VG E=0/15V, RG= 5 L 1 )=100nH, C 1 )=39pF Energy losses include tail and diode reverse recovery. - 5.8 -

mJ

Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 182 - ns Diode reverse recovery charge Q r r - 5.8 - C Diode peak reverse recovery current I r r m - 56.2 - A Diode peak rate of fall of reverse recovery current during tb

di r r /d t

T j=175C VR=400V, IF=75A, diF /d t=1460A/s

- 1013 - A/s

1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.

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I C, C

OLL

EC

TOR

CU

RR

EN

T

10Hz 100Hz 1kHz 10kHz 100kHz0A

50A

100A

150A

200A

TC=110C

TC=80C

I C, C

OLL

EC

TOR

CU

RR

EN

T 1V 10V 100V 1000V

1A

10A

100A10s

50s

1ms

DC

tp=1s

10ms

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of

switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 5)

Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)

P tot, P

OW

ER

DIS

SIPA

TIO

N

25C 50C 75C 100C 125C 150C0W

50W

100W

150W

200W

250W

300W

350W

400W

I C, C

OLL

EC

TOR

CU

RR

EN

T

25C 75C 125C0A

30A

60A

90A

120A

TC, CASE TEMPERATURE TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of

case temperature (Tj 175C)

Figure 4. DC Collector current as a function of case temperature (VGE 15V, Tj 175C)

Ic

Ic

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I C, C

OLL

EC

TOR

CU

RR

EN

T

0V 1V 2V 3V0A

30A

60A

90A

120A

15V

7V

9V

11V

13V

VGE=20V

I C, C

OLL

EC

TOR

CU

RR

EN

T

0V 1V 2V 3V0A

30A

60A

90A

120A

15V

7V

9V

11V

13V

VGE=20V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic

(Tj = 25C) Figure 6. Typical output characteristic

(Tj = 175C)

I C, C

OLL

EC

TOR

CU

RR

EN

T

0V 2V 4V 6V 8V0A

20A

40A

60A

80A

25C

T J=175C

V CE(

sat),

CO

LLE

CTO

R-E

MIT

T S

ATU

RA

TIO

N V

OLT

AG

E

0C 50C 100C 150C0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

IC=75A

IC=150A

IC=37.5A

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE Figure 7. Typical transfer characteristic

(VCE=20V) Figure 8. Typical collector-emitter

saturation voltage as a function of junction temperature (VGE = 15V)

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t, S

WIT

CH

ING

TIM

ES

0A 40A 80A 120A10ns

100ns

t r

td(on)

t f

td(off)

t, S

WIT

CH

ING

TIM

ES

5 10 1510ns

100ns

t r

td(on)

t f

td(off)

IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a

function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 5, Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E)

t, S

WIT

CH

ING

TIM

ES

25C 50C 75C 100C 125C 150C

100ns

t r

td(on)

t f

td(off)

V GE(

th),

GA

TE-E

MIT

T TR

SH

OLD

VO

LTAG

E

-50C 0C 50C 100C 150C0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.max.

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a

function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, RG=5, Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.2mA)

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E, S

WIT

CH

ING

EN

ER

GY

LO

SSE

S

0A 20A 40A 60A 80A 100A 120A 140A0.0mJ

4.0mJ

8.0mJ

12.0mJ

Ets*

Eoff

*) Eon and Ets include losses due to diode recovery

Eon*

E, S

WIT

CH

ING

EN

ER

GY

LO

SSE

S

0 5 10 150.0mJ

2.0mJ

4.0mJ

6.0mJ

8.0mJ E ts*

E off

*) E on and E ts include losses

due to diode recovery

E on*

IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses

as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 5, Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E)

E, S

WIT

CH

ING

EN

ER

GY

LO

SSE

S

25C 50C 75C 100C 125C 150C0.0mJ

1.0mJ

2.0mJ

3.0mJ

4.0mJ

5.0mJEts*

Eoff

*) Eon and Ets include losses due to diode recovery

Eon*

E, S

WIT

CH

ING

EN

ER

GY

LO

SSE

S

300V 350V 400V 450V 500V 550V0mJ

2mJ

4mJ

6mJ

8mJ

E ts*

Eon*

*) E on and E ts include losses

due to diode recovery

Eoff

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE Figure 15. Typical switching energy losses

as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, RG = 5, Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 75A, RG = 5, Dynamic test circuit in Figure E)

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V GE, G

ATE

-EM

ITTE

R V

OLT

AG

E

0nC 100nC 200nC 300nC 400nC0V

5V

10V

15V

480V

120V

c, C

AP

AC

ITA

NC

E

0V 10V 20V

100pF

1nF

C rss

C oss

C iss

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge

(IC=75 A)

Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)

I C(s

c), s

hort

circ

uit C

OLL

EC

TOR

CU

RR

EN

T

12V 14V 16V 18V0A

250A

500A

750A

1000A

t SC, S

HO

RT

CIR

CU

IT W

ITH

STA

ND

TIM

E

10V 11V 12V 13V 14V0s

2s

4s

6s

8s

10s

12s

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE Figure 19. Typical short circuit collector

current as a function of gate-emitter voltage (VCE 400V, Tj 150C)

Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax



Z thJ

C, T

RA

NS

IEN

T TH

ER

MA

L R

ESI

STA

NC

E

1s 10s 100s 1ms 10ms 100ms10-3K/W

10-2K/W

10-1K/W

single pulse

0.010.02

0.05

0.1

0.2

D=0.5

Z thJ

C, T

RA

NS

IEN

T TH

ER

MA

L R

ESI

STA

NC

E

100ns 1s 10s 100s 1ms 10ms100ms

10-2K/W

10-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance

(D = tp / T) Figure 22. Diode transient thermal

impedance as a function of pulse width (D=tP/T)

t rr, R

EV

ER

SE R

EC

OVE

RY

TIM

E

1000A/s 1500A/s0ns

50ns

100ns

150ns

200ns

TJ=25C

TJ=175C

Qrr, R

EV

ER

SE

RE

CO

VE

RY

CH

ARG

E

1000A/s 1500A/s0C

1C

2C

3C

4C

5C

TJ=25C

TJ=175C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as

a function of diode current slope (VR=400V, IF=75A, Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 75A, Dynamic test circuit in Figure E)

R , ( K / W ) , ( s ) 0.1968 0.115504 0.0733 0.009340 0.0509 0.000823 0.0290 0.000119

C 1=1 /R 1

R 1 R2

C 2=2 /R 2

R , ( K / W ) , ( s ) 0.1846 0.110373 0.1681 0.015543 0.1261 0.001239 0.0818 0.000120 0.04 0.000008

C1=1/R1

R1 R2

C2=2/R2

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I rr, R

EV

ER

SE

RE

CO

VE

RY

CU

RR

EN

T

1000A/s 1500A/s0A

10A

20A

30A

40A

50A

60A

T J=25C

TJ=175C

dirr/

dt, D

IOD

E P

EAK

RAT

E O

F FA

LL

OF

REV

ER

SE

RE

CO

VE

RY

CU

RR

EN

T

1000A/s 1500A/s0A/s

-200A/s

-400A/s

-600A/s

-800A/s

-1000A/s

-1200A/s

TJ=25C

TJ=175C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current

as a function of diode current slope (VR = 400V, IF = 75A, Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=75A, Dynamic test circuit in Figure E)

I F, F

OR

WA

RD

CU

RR

EN

T

0V 1V 2V0A

50A

100A

150A

200A

175C

TJ=25C

V F, F

OR

WA

RD

VO

LTAG

E

0C 50C 100C 150C0.0V

0.5V

1.0V

1.5V

2.0V

75A

IF=150A

37.5A

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE Figure 27. Typical diode forward current as

a function of forward voltage

Figure 28. Typical diode forward voltage as a function of junction temperature

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PG-TO247-3-21

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Figure A. Definition of switching times

Figure B. Definition of switching losses

Ir r m

90% Ir r m

10% Ir r m

di /dtF

tr r

IF

i,v

tQS QF

tS

tF

VR

di /dtr r

Q =Q Qr r S F

+t =t tr r S F

+

Figure C. Definition of diodes switching characteristics

p(t)1 2 n

T (t)j

11

22

nn

TC

r r

r

r

rr

Figure D. Thermal equivalent circuit

Figure E. Dynamic test circuit

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Edition 2006-01 Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 11/20/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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