Data Sheet

UNISONIC TECHNOLOGIES CO., LTD

7N65A Power MOSFET

www.unisonic.com.tw 1 of 7 Copyright 2011 Unisonic Technologies Co., Ltd QW-R502-585.B

7A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement

mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high efficiency switch mode power supply.

FEATURES * RDS(ON) = 1.4 @VGS = 10 V * Ultra low gate charge (typical 28 nC ) * Low reverse transfer Capacitance (CRSS= typical 12 pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness

SYMBOL

1.Gate

3.Source

2.Drain

ORDERING INFORMATION Ordering Number

Package Pin Assignment

Packing Lead Free Halogen Free 1 2 3

7N65AL-TA3-T 7N65AG-TA3-T TO-220 G D S Tube 7N65AL-TF1-T 7N65AG-TF1-T TO-220F1 G D S Tube 7N65AL-TF3-T 7N65AG-TF3-T TO-220F G D S Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

7N65AL-TA3-T(1)Packing Type

(2)Package Type

(3)Lead Free

(1) T: Tube

(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F

(3) G: Halogen Free, L: Lead Free

7N65A Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R502-585.B

ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT

Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 7 A Continuous Drain Current ID 7 A Pulsed Drain Current (Note 2) IDM 28 A

Avalanche Energy Single Pulsed (Note 3) EAS 330 mJ Repetitive (Note 2) EAR 7.5 mJ

Power Dissipation TO-220

PD 65 W

TO-220F/TO-220F1 30 W Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ(MAX) 3. L = 12.05mH, IAS = 7.4A, VDD=50V, RG = 27 , Starting TJ = 25C

THERMAL DATA PARAMETER SYMBOL RATINGS UNIT

Junction to Ambient TO-220

JA 83.3

C/W TO-220F/TO-220F1 62.5

Junction to Case TO-220

JC 1.92

C/W TO-220F/TO-220F1 4.16

7N65A Power MOSFET


ELECTRICAL CHARACTERISTICS (TC =25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 A

Gate-Source Leakage Current Forward

IGSS VGS = 30 V, VDS = 0 V 100 nA

Reverse VGS = -30 V, VDS = 0 V -100 nAON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250A 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =3.5A (Note 4) 1.05 1.4 DYNAMIC CHARACTERISTICS Input Capacitance CISS

VDS=25V, VGS=0V, f=1.0 MHz 950 1430 pF

Output Capacitance COSS 85 130 pFReverse Transfer Capacitance CRSS 12 18 pFSWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON)

VDD=325V, ID =7A, RG =25 (Note 1, 2)

16 nsTurn-On Rise Time tR 60 nsTurn-Off Delay Time tD(OFF) 80 nsTurn-Off Fall Time tF 65 nsTotal Gate Charge QG VDS=520V, ID=7A,

VGS=10 V (Note 1, 2)

28 42 nCGate-Source Charge QGS 5.5 8.3 nCGate-Drain Charge QGD 11 17 nCDRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7A 1.4 V Maximum Continuous Drain-Source Diode Forward Current

IS 7 A

Maximum Pulsed Drain-Source Diode Forward Current

ISM 28 A

Reverse Recovery Time trr VGS = 0V, IS =7A, dIF / dt = 100A/s (Note 1)

365 nsReverse Recovery Charge QRR 4.23 CNotes: 1. Pulse Test: Pulse width 300s, Duty cycle 2% 2. Essentially independent of operating temperature

7N65A Power MOSFET


TEST CIRCUITS AND WAVEFORMS

Same Type as D.U.T.

L

VDDDriver

VGS

RG

-

VDS

D.U.T. +

* dv/dt controlled by RG* ISD controlled by pulse period* D.U.T.-Device Under Test

-

+

Peak Diode Recovery dv/dt Test Circuit

P. W.Period

D=VGS(Driver)

ISD(D.U.T.)

IFM, Body Diode Forward Current

di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop

VDD

10V

VDS(D.U.T.)

VGS=

P.W.Period

Peak Diode Recovery dv/dt Waveforms

7N65A Power MOSFET


TEST CIRCUITS AND WAVEFORMS (Cont.)

VGS

D.U.T.

RG

10V

VDSRL

VDD

Pulse Width 1s

Duty Factor0.1%

VDS 90%

10%VGS

tD(ON)tR

tD(OFF)tF

Switching Test Circuit Switching Waveforms

50k

0.3F

DUT

VDS

Same Type as D.U.T.

0.2F12V

VGS

1mA

10V

Charge

QGS QGD

QG

VGS

Gate Charge Test Circuit Gate Charge Waveform

VDD

tp Time

BVDSSIAS

ID(t) VDS(t)

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

7N65A Power MOSFET


TYPICAL CHARACTERISTICS

Dra

in C

urre

nt, I

D(A

)

Dra

in C

urre

nt, I

D(A

)

0

2.0

0.8

Drain Current, ID (A)

ON

Res

ista

nce,

RD

S(O

N) (

)

ON Resistance vs. Drain Current

25105 15 200

1.0

1.5

2.5

0.4

Source Drain Voltage, VSD (V)

Rev

erse

Dra

in C

urre

nt, I

S(A

)

Reverse Drain Current vs.Source Drain Voltage

1.40.6 810-1

100

101

0.8

VGS=20V

Note:1. VDS=10V2. Pulse test

VGS=10V

Note:1. Td=25C2. Pulsed test

1.21.0

Cap

acita

nce

(pF

)

Gat

e S

ourc

e V

olta

ge, V

GS

(V)

7N65A Power MOSFET


TYPICAL CHARACTERISTICS (Cont.)

-50

1.1

0.9

Junction Temperature, TJ (C)

Dra

in-S

ourc

e V

olta

ge, V

DS

S(N

orm

aliz

ed)

Drain-Source Voltage vs. Junction Temperature

1750 100

0.8

1.0

1.2

Junction Temperature, TJ (C)O

N-R

esis

tanc

e, R

DS

(ON

) (N

orm

aliz

ed)

ON-Resistance vs. Junction Temperature

175-50 1000.0

1.0

2.5

25 15075

Note:1. VGS = 0V2. ID = 250A

0150125755025-25

0.5

1.5

2.0

3.0

12550-25

Note:1. VGS = 10V2. ID = 3.5A

Dra

in C

urre

nt, I

D(A

)

Dra

in C

urre

nt, I

D(A

)

1ms

VD

SS M

AX

UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice.

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