Darling Ton Push-Pull Amplifier Notes
Transcript of Darling Ton Push-Pull Amplifier Notes
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORSISSUE 1 MARCH 94
FEATURES
* 80 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
* Ptot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX602 ZTX603 UNIT
Collector-Base Voltage VCBO 80 100 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 4 A
Continuous Collector Current IC 1 A
Power Dissipation at Tamb = 25°Cderate above 25°C
Ptot 15.7
WmW/ °C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-BaseBreakdown Voltage
V(BR)CBO 80 100 V IC=100µA
Collector-EmitterBreakdown Voltage
V(BR)CEO 60 80 V IC=10mA*
Emitter-BaseBreakdown Voltage
V(BR)EBO 10 10 V IE=100µA
Collector Cut-OffCurrent
ICBO 0.01
100.01
10
µAµAµAµA
VCB=60VVCB=80VVCB=60V,T
amb=100°C
VCB=80V,Tamb
=100°C
Emitter Cut-OffCurrent
IEBO 0.1 0.1 µA VEB=8V
Colllector-EmitterCut-Off Current
ICES 1010
µAµA
VCES=60VVCES=80V
Collector-EmitterSaturation Voltage
VCE(sat) 1.01.0
1.01.0
VV
IC=400mA,IB=0.4mA*IC=1A, IB=1mA*
Base-Emitter Saturation Voltage
VBE(sat) 1.8 1.8 V IC=1A, IB=1mA*
Base-Emitter Turn-On Voltage
VBE(on) 1.7 1.7 V IC=1A, VCE=5V*
E-Line
TO92 Compatible
ZTX602ZTX603
3-209
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Static ForwardCurrent TransferRatio
hFE 2K5K2K0.5K
100K
2K5K2K0.5K
100K
IC=50mA, VCE=5VIC=500mA, VCE=5V*IC=1A, VCE=5V*IC=2A, VCE=5V*
Transition Frequency fT 150 150 MHz IC=100mA, VCE=10Vf=20MHz
Input Capacitance Cibo 90 Typical pF VEB=500mV, f=1MHz
Output Capacitance Cobo 15 Typical pF VCB=10V, f=1MHz
Switching Times ton 0.5 Typical µs IC=500mA, VCE=10VIB1=IB2=0.5mA
toff 1.1 Typical µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
The maximum permissible operational temperature can be obtained from this graph usingthe following equation
Tamb (max ) =
Power (max ) − Power (act)0.0057
+25°C
Tamb(max )= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for agiven VCE and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
ZTX602ZTX603
C B E
Voltage Derating Graph
VCE - Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
RS= 50KΩ
1 10 100
DC Conditions
RS= 200KΩ
RS= ∞
Maxim
um
Pow
er
Dis
sip
ation (W
)
200
RS= 1MΩ
RS= 10KΩ
ZTX603ZTX602
3-210
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORSISSUE 1 MARCH 94
FEATURES
* 80 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
* Ptot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX602 ZTX603 UNIT
Collector-Base Voltage VCBO 80 100 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 4 A
Continuous Collector Current IC 1 A
Power Dissipation at Tamb = 25°Cderate above 25°C
Ptot 15.7
WmW/ °C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-BaseBreakdown Voltage
V(BR)CBO 80 100 V IC=100µA
Collector-EmitterBreakdown Voltage
V(BR)CEO 60 80 V IC=10mA*
Emitter-BaseBreakdown Voltage
V(BR)EBO 10 10 V IE=100µA
Collector Cut-OffCurrent
ICBO 0.01
100.01
10
µAµAµAµA
VCB=60VVCB=80VVCB=60V,T
amb=100°C
VCB=80V,Tamb
=100°C
Emitter Cut-OffCurrent
IEBO 0.1 0.1 µA VEB=8V
Colllector-EmitterCut-Off Current
ICES 1010
µAµA
VCES=60VVCES=80V
Collector-EmitterSaturation Voltage
VCE(sat) 1.01.0
1.01.0
VV
IC=400mA,IB=0.4mA*IC=1A, IB=1mA*
Base-Emitter Saturation Voltage
VBE(sat) 1.8 1.8 V IC=1A, IB=1mA*
Base-Emitter Turn-On Voltage
VBE(on) 1.7 1.7 V IC=1A, VCE=5V*
E-Line
TO92 Compatible
ZTX602ZTX603
3-209
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Static ForwardCurrent TransferRatio
hFE 2K5K2K0.5K
100K
2K5K2K0.5K
100K
IC=50mA, VCE=5VIC=500mA, VCE=5V*IC=1A, VCE=5V*IC=2A, VCE=5V*
Transition Frequency fT 150 150 MHz IC=100mA, VCE=10Vf=20MHz
Input Capacitance Cibo 90 Typical pF VEB=500mV, f=1MHz
Output Capacitance Cobo 15 Typical pF VCB=10V, f=1MHz
Switching Times ton 0.5 Typical µs IC=500mA, VCE=10VIB1=IB2=0.5mA
toff 1.1 Typical µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
The maximum permissible operational temperature can be obtained from this graph usingthe following equation
Tamb (max ) =
Power (max ) − Power (act)0.0057
+25°C
Tamb(max )= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for agiven VCE and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
ZTX602ZTX603
C B E
Voltage Derating Graph
VCE - Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
RS= 50KΩ
1 10 100
DC Conditions
RS= 200KΩ
RS= ∞
Maxim
um
Pow
er
Dis
sip
ation (W
)
200
RS= 1MΩ
RS= 10KΩ
ZTX603ZTX602
3-210
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
VC
E(sa
t) -
(Vol
ts)
IC -
Col
lect
or C
urre
nt (
Am
ps)
VCE - Collector Voltage (Volts)
Safe Operating Area
1 100010 1000.01
0.1
1
10Single Pulse Test at Tamb=25°C
D.C. 1s 100ms 10ms
1.0ms 100µs
0
0.4
0.01 0.1 101
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IC - Collector Current (Amps)
VBE(sat) v IC
VB
E(sa
t) -
(Vol
ts)
0.6
0.01 100.1 1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC/IB=100
IC/IB=100
IC - Collector Current (Amps)
hFE v IC
hFE
- G
ain
norm
alis
ed to
1 A
mp
0.001 0.01 100.1 1
0.5
1.0
1.5
2.0
2.5
VCE=5V
IC - Collector Current (Amps)
VBE(on) v IC
VB
E -
(Vol
ts)
0.6
1.0
1.4
1.8
0.01 0.1 1 100.2
VCE=5V
-55°C +25°C +100°C
0.4
0.8
1.2
1.6
2.2
0.2
-55°C +25°C +100°C +175°C
-55°C +25°C +100°C +175°C
0.4
-55°C +25°C +100°C
ZTX602 ZTX603
2.0
ZTX602ZTX603
3-211
©2000 Fairchild Semiconductor International Rev. A, February 2000
TIP
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0/1
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/14
2
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP140 : TIP141 : TIP142
60 80 100
VVV
VCEO Collector-Emitter Voltage : TIP140 : TIP141 : TIP142
60 80 100
VVV
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 10 A
ICP Collector Current (Pulse) 15 A
IB Base Current (DC) 0.5 A
PC Collector Dissipation (TC=25°C) 125 W
TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage : TIP140: TIP141: TIP142
IC = 30mA, IB = 0
60 80 100
VVV
ICEO Collector Cut-off Current : TIP140: TIP141: TIP142
VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0
2 2 2
mAmAmA
ICBO Collector Cut-off Current : TIP140: TIP141: TIP142
VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0
1 1 1
mAmAmA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA
hFE DC Current Gain VCE = 4V, IC = 5A VCE = 4V, IC = 10A
1000 500
VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA
2 3
VV
VBE(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V
VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 10A 3 V
tD Delay Time VCC = 30V, IC = 5A IB1 = 20mA, IB2 = -20mA RL = 6Ω
0.15 µs
tR Rise Time 0.55 µs
tSTG Storage Time 2.5 µs
tF Fall Time 2.5 µs
TIP140/141/142
Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE
= 1000 @ VCE = 4V, IC = 5A (Min.)
• Industrial Use• Complement to TIP145/146/147
Equivalent Circuit
B
E
C
R1 R2
R1 8kΩ≅R2 0.12kΩ≅
TO-3P1
1.Base 2.Collector 3.Emitter
©2000 Fairchild Semiconductor International
TIP
14
0/1
41
/14
2
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0 1 2 3 4 50
1
2
3
4
5
6
7
8
9
10
IB = 2000uA
IB = 1800uA
IB = 1600uA
IB = 1400uA
IB = 1200uA
IB = 1000uA IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
I C[A
], C
OL
LEC
TO
R C
UR
RE
NT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 10010
100
1k
10k
100k
VCE = 4V
h FE,
DC
CU
RR
EN
T G
AIN
IC[A], COLLECTOR CURRENT
0.1 1 10 1000.01
0.1
1
10
IC=500IB
VCE(sat)
VBE(sat)
VB
E(s
at)
, VC
E(s
at)
[V],
SA
TU
RA
TIO
N V
OLT
AG
E
IC[A], COLLECTOR CURRENT
1 10 100 100010
100
1000
f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Co
b[pF
], C
AP
AC
ITA
NC
E
1 10 100 10000.1
1
10
100
TIP141
TIP142
TIP140
DC
I C[A
], C
OL
LEC
TO
R C
UR
RE
NT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 1750
25
50
75
100
125
150
PC[W
], P
OW
ER
DIS
SIP
AT
ION
TC[oC], CASE TEMPERATURE
Darlington Push-Pull Amplifier Design
+
RE2
Vcc1
Q6Q2N3904
+
RE1
+Speaker
8
Q4
Q2N3906
Q2
Q2N3904
+
RB1
Q7
Q2N3906
Vee1
Q5Q2N3904
+
RB2
Q8
Q2N3906
Q3
MJE2955T
-
+ Vin
Q1
MJE3055T
Design a Darlington push-pull amplifier to deliver 4 W of
power to an 8 Ω, 5% load.
Complementary Silicon PlasticPower Transistors
. . . designed for use in general–purpose amplifier and switchingapplications.
• DC Current Gain Specified to 10 Amperes
• High Current Gain — Bandwidth Product —fT = 2.0 MHz (Min) @ IC
= 500 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating ÎÎÎÎÎÎÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎÎÎÎ
Value ÎÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎ
VCEO ÎÎÎÎÎÎÎÎÎÎÎÎ
60 ÎÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage ÎÎÎÎÎÎÎÎÎÎ
VCB ÎÎÎÎÎÎÎÎÎÎÎÎ
70 ÎÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎ
VEB ÎÎÎÎÎÎÎÎÎÎÎÎ
5.0 ÎÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current ÎÎÎÎÎÎÎÎÎÎ
IC ÎÎÎÎÎÎÎÎÎÎÎÎ
10 ÎÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current ÎÎÎÎÎÎÎÎÎÎ
IB ÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 ÎÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25CDerate above 25C
MJE3055T, MJE2955T
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
PD† ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
75
0.6
ÎÎÎÎÎÎÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage JunctionTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TJ, Tstg ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
–55 to +150 ÎÎÎÎÎÎÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic ÎÎÎÎÎÎÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎÎÎÎ
Max ÎÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case ÎÎÎÎÎÎÎÎÎÎ
θJC ÎÎÎÎÎÎÎÎÎÎÎÎ
1.67 ÎÎÎÎÎÎ
C/W
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10
5.0
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.2
0.120 30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C (D = 0.1)
I C, C
OLL
EC
TO
R C
UR
RE
NT
(AM
P)
dc
7.0 10
5.0 ms 1.0ms
50 60
0.5
7.0
3.0
0.7
0.3
TJ = 150°C
100µsThere are two limitations on the power handling ability of
a transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC – VCElimits of the transistor that must be observed for reliableoperation; i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150C. TC isvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitationswill reduce the power that can be handled to values less thanthe limitations imposed by second breakdown. (SeeAN415A)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002– Rev. 41 Publication Order Number:
MJE2955T/D
MJE2955T
MJE3055T
10 AMPERECOMPLEMENTARY
SILICONPOWER TRANSISTORS
60 VOLTS75 WATTS
*ON Semiconductor Preferred Device
*PNP
NPN*
CASE 221A–09TO–220AB
STYLE 1:PIN 1. BASE
2. COLLECTOR3. EMITTER
4. COLLECTOR1
23
4
MJE2955T MJE3055T
http://onsemi.com2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic ÎÎÎÎÎÎÎÎÎÎ
Symbol ÎÎÎÎÎÎ
MinÎÎÎÎÎÎÎÎ
Max ÎÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎ
VCEO(sus) ÎÎÎÎÎÎ
60 ÎÎÎÎÎÎÎÎ
— ÎÎÎÎÎÎ
VdcÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎICEO
ÎÎÎÎÎΗÎÎÎÎÎÎÎÎ700
ÎÎÎÎÎεAdcÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ICEXÎÎÎÎÎÎÎÎÎÎÎÎ
——
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
1.05.0
ÎÎÎÎÎÎÎÎÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current(VCB = 70 Vdc, IE = 0)(VCB = 70 Vdc, IE = 0, TC = 150C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ICBO ÎÎÎÎÎÎÎÎÎ
——
ÎÎÎÎÎÎÎÎÎÎÎÎ
1.010
ÎÎÎÎÎÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ÎÎÎÎÎÎÎÎÎÎ
IEBO ÎÎÎÎÎÎ
— ÎÎÎÎÎÎÎÎ
5.0 ÎÎÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (1)(IC = 4.0 Adc, VCE = 4 0 Vdc)(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
hFE ÎÎÎÎÎÎÎÎÎ
205.0
ÎÎÎÎÎÎÎÎÎÎÎÎ
100—
ÎÎÎÎÎÎÎÎÎ
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage (1)(IC = 4.0 Adc, IB = 0.4 Adc)(IC = 10 Adc, IB = 3.3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCE(sat) ÎÎÎÎÎÎÎÎÎ
——
ÎÎÎÎÎÎÎÎÎÎÎÎ
1.18.0
ÎÎÎÎÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc) ÎÎÎÎÎÎÎÎÎÎ
VBE(on)ÎÎÎÎÎÎ
— ÎÎÎÎÎÎÎÎ
1.8 ÎÎÎÎÎÎ
VdcÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain–Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) ÎÎÎÎÎÎÎÎÎÎ
fT ÎÎÎÎÎÎ
2.0ÎÎÎÎÎÎÎÎ
— ÎÎÎÎÎÎ
MHz
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 20%.
MJE2955T MJE3055T
http://onsemi.com3
0
TC, CASE TEMPERATURE (°C)
75 100 17525 50
Figure 2. DC Current Gain
125 150
500
0.01
Figure 3. Power Derating
IC, COLLECTOR CURRENT (AMP)
5.00.02 0.05 0.1 0.2 1.0 2.0 100.5
300
200
100
50
30
90
0
80
60
40
70
50
hF
E, D
C C
UR
RE
NT
GA
IN
20
10
5.0
TJ = 150°C
25°C
-55°C
VCE = 2.0 V
PD
, PO
WE
R D
ISS
IPA
TIO
N (
WA
TT
S)
30
10
20
MJE3055T
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5 1.0 100.2 0.3 2.0 3.0
Figure 4. “On” Voltages
2.0
0
1.6
1.2
0.8
V, V
OLT
AG
E (
VO
LTS
)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5 1.0 100.2 0.3 2.0 3.0
1.4
0
1.2
1.0
0.8V,
VO
LTA
GE
(V
OLT
S)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
MJE3055T
0.6
0.2
CB E
TO-92
C
B
E
BC
C
SOT-223
E
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
2001 Fairchild Semiconductor Corporation
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N3904 *MMBT3904 **PZT3904
PD Total Device DissipationDerate above 25°C
6255.0
3502.8
1,0008.0
mWmW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
2N3904 MMBT3904
SOT-23Mark: 1A
PZT3904
2N
39
04
/ MM
BT
39
04
/ PZ
T3
90
4
2N3904/MMBT3904/PZT3904, Rev A
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter BreakdownVoltage
IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30 V, VEB = 3V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2pItf=.4 Vtf=4 Xtf=2 Rb=10)
Spice Model
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,f = 100 MHz
300 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0,f = 1.0 MHz
4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0,f = 1.0 MHz
8.0 pF
NF Noise Figure IC = 100 µA, VCE = 5.0 V,RS =1.0kΩ,f=10 Hz to 15.7kHz
5.0 dB
td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
ts Storage Time VCC = 3.0 V, IC = 10mA 200 ns
tf Fall Time IB1 = IB2 = 1.0 mA 50 ns
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 VIC = 1.0 mA, VCE = 1.0 VIC = 10 mA, VCE = 1.0 VIC = 50 mA, VCE = 1.0 VIC = 100 mA, VCE = 1.0 V
40701006030
300
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA
0.20.3
VV
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA
0.65 0.850.95
VV
2N
39
04
/ MM
BT
39
04
/ PZ
T3
90
4NPN General Purpose Amplifier
(continued)
2N3904 / M
MB
T3904 / P
ZT
3904
Typical Characteristics
Base-Emitter ON Voltage vsCollector Current
0.1 1 10 1000.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)V
-
BA
SE
-EM
ITT
ER
ON
VO
LTA
GE
(V
)B
E(O
N)
C
V = 5VCE
25 °C
125 °C
- 40 °C
NPN General Purpose Amplifier(continued)
Base-Emitter SaturationVoltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
SE
-EM
ITT
ER
VO
LTA
GE
(V)
BE
SA
T
C
β = 10
25 °C
125 °C
- 40 °C
Collector-Emitter SaturationVoltage vs Collector Current
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)V
-
CO
LL
EC
TOR
-EM
ITT
ER
VO
LTA
GE
(V
)C
ES
AT
25 °C
C
β = 10
125 °C
- 40 °C
Collector-Cutoff Currentvs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
- C
OL
LE
CTO
R C
UR
RE
NT
(n
A)
A
V = 30VCB
CB
O
°
Capacitance vs Reverse Bias Voltage
0.1 1 10 1001
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CA
PAC
ITA
NC
E (
pF)
C obo
C ibo
f = 1.0 MHz
Typical Pulsed Current Gainvs Collector Current
0.1 1 10 1000
100
200
300
400
500
I - COLLECTOR CURRENT (mA)h
- T
YP
ICA
L P
UL
SE
D C
UR
RE
NT
GA
INF
E
- 40 °C
25 °C
C
V = 5VCE
125 °C
Power Dissipation vsAmbient Temperature
0 25 50 75 100 125 1500
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
- PO
WE
R D
ISS
IPAT
ION
(W)
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figure vs Frequency
0.1 1 10 1000
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF
- N
OIS
E F
IGU
RE
(d
B)
V = 5.0VCE
I = 100 µA, R = 500 ΩC S
I = 1.0 mA R = 200ΩC
S
I = 50 µA
R = 1.0 kΩCS
I = 0.5 mA R = 200ΩC
S
kΩ
Noise Figure vs Source Resistance
0.1 1 10 1000
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF
- N
OIS
E F
IGU
RE
(d
B)
I = 100 µAC
I = 1.0 mAC
S
I = 50 µAC
I = 5.0 mAC
θ - DE
GR
EE
S
0
406080100120
140160
20
180
Current Gain and Phase Anglevs Frequency
1 10 100 10000
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h
-
CU
RR
EN
T G
AIN
(d
B)
θ
V = 40VCE
I = 10 mAC
h fe
fe
Turn-On Time vs Collector Current
1 10 1005
10
100
500
I - COLLECTOR CURRENT (mA)
TIM
E (
nS
)
I = I = B1
C
B2I c
1040V
15V
2.0V
t @ V = 0VCBd
t @ V = 3.0VCCr
Rise Time vs Collector Current
1 10 1005
10
100
500
I - COLLECTOR CURRENT (mA)
t
- R
ISE
TIM
E (
ns)
I = I = B1
C
B2I c
10
T = 125°C
T = 25°CJ
V = 40VCC
r
J
2N3904 / M
MB
T3904 / P
ZT
3904NPN General Purpose Amplifier
(continued)
2N3904 / M
MB
T3904 / P
ZT
3904NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
1 10 1005
10
100
500
I - COLLECTOR CURRENT (mA)
t
- S
TOR
AG
E T
IME
(n
s)
I = I = B1
C
B2I c
10
S
T = 125°C
T = 25°CJ
J
Fall Time vs Collector Current
1 10 1005
10
100
500
I - COLLECTOR CURRENT (mA)
t
- FA
LL
TIM
E (
ns)
I = I = B1
C
B2I c
10V = 40VCC
f
T = 125°C
T = 25°CJ
J
Current Gain
0.1 1 1010
100
500
I - COLLECTOR CURRENT (mA)
h
- C
UR
RE
NT
GA
IN
V = 10 VCE
C
fe
f = 1.0 kHzT = 25 CA
o
Output Admittance
0.1 1 101
10
100
I - COLLECTOR CURRENT (mA)
h
- O
UT
PU
T A
DM
ITTA
NC
E (
mho
s) V = 10 VCE
C
oe
f = 1.0 kHzT = 25 CA
oµ
Input Impedance
0.1 1 100.1
1
10
100
I - COLLECTOR CURRENT (mA)
h
- IN
PU
T IM
PE
DA
NC
E (
k )
V = 10 VCE
C
ie
f = 1.0 kHzT = 25 CA
oΩ
Voltage Feedback Ratio
0.1 1 101
2
3
4
5
7
10
I - COLLECTOR CURRENT (mA)
h
- V
OLT
AG
E F
EE
DB
AC
K R
AT
IO (
x10
)
V = 10 VCE
C
re
f = 1.0 kHzT = 25 CA
o
_4
VoutVin
+
RE2
1
Q1
MJE3055T
+Speaker
8
0
Q2
Q2N3904
Q4
Q2N3906
0+
RE1
1
Q5Q2N3904
-
+
Tra
nsi
en
t A
na
lysi
s V1AMPLITUDE = 10FREQUENCY = 1k 0
+
RB2
2.7k
Vcc1
Q8
Q2N3906
Vee1
Q3
MJE2955T
Q6Q2N3904
Vcc1
Q7
Q2N3906
+
-
V2DC = 15
+
-
V3DC = 15
Vee1
+
RB1
2.7k
Date/Time run: 09/25/02 21:33:00** Profile: "SCHEMATIC1-Waveforms" [ C:\Website\Rose_Classes\ECE351\Notes\OrCAD\Darlington Push-Pu...
Temperature: 27.0
Date: September 25, 2002 Page 1 Time: 21:37:24
(A) drawings-SCHEMATIC1-Waveforms.dat (active)
Time
0s 0.5ms 1.0ms 1.5ms 2.0msV(VIN) V(VOUT)
-10V
-5V
0V
5V
10V
VoutVin
Q1
MJE3055T
Vee1
+
RE1
1
0
Q2
Q2N3904
Sweep
+
-
AC
V4Magnitude = 1Phase = 0
Q5Q2N3904
0
Q4
Q2N3906
+
RE2
1
Q7
Q2N3906
Vcc1
+
-
V2DC = 15
Vee1
+
RB1
2.7k
Vcc1
+Speaker
8
Q3
MJE2955T
0
Q8
Q2N3906
+
RB2
2.7k
+
-
V3DC = 15
Q6Q2N3904
Date/Time run: 09/25/02 21:38:27** Profile: "SCHEMATIC1-AC Sweep" [ C:\Website\Rose_Classes\ECE351\Notes\OrCAD\Darlington Push-Pul...
Temperature: 27.0
Date: September 25, 2002 Page 1 Time: 21:39:39
(B) drawings-SCHEMATIC1-AC Sweep.dat (active)
Frequency
1.0Hz 10Hz 100Hz 1.0KHz 10KHz 100KHz 1.0MHz 10MHz 100MHzV(Vout)
0.2V
0.4V
0.6V
0.8V
1.0V
(93.972,908.122m)
Date/Time run: 09/25/02 21:38:27** Profile: "SCHEMATIC1-AC Sweep" [ C:\Website\Rose_Classes\ECE351\Notes\OrCAD\Darlington Push-Pul...
Temperature: 27.0
Date: September 25, 2002 Page 1 Time: 21:41:14
(C) drawings-SCHEMATIC1-AC Sweep.dat (active)
Frequency
1.0Hz 10Hz 100Hz 1.0KHz 10KHz 100KHz 1.0MHz 10MHz 100MHzI(Speaker)/ I(V4)
0
40
80
120
160
(138.995,152.860)