C a r l Z e i s s S M T – N a n o T e c h n o l o g y S y s t e m s D i v i s i o n

ZEISS CrossBeam® SERIES

The ultimate 3D research tool thatcombines FIB and GEMINI® technology to one extraordinary powerful systemwith unlimited analytical capabilities

E n a b l i n g t h e N a n o - A g e W o r l d ®

CUTTING EDGE TECHNOLOGY DEL IVERING

UNIQUE SOLUTIONS

CrossBeam® SeriesThe ultimate 3D research and control tool for processing and analyzingsamples at nano-scale – high resolutionlive imaging of semiconductor, biologicaland material science applications

2

CrossBeam® Series

New dimensions with extraordinary power –

designed for ultimate 3D research and process

control

High precise – direct processing and shaping

of the specimen

Unique live imaging – during the whole range

of specimen processing, combining ultra high

resolution FESEM with high performance FIB

Ultimate cognition – unlimited analytical

capabilities at nano-scale

Perfect handling – full control of specimen

processing

Unique 3-D Views – Delivers Cutting-edge Solutions

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1 µm

1 µm

1 µm

2 µm

CrossBeam®1540XBThe ZEISS 1540XB CrossBeam® combines the advan-

tages of the ultra high resolution, low dose GEMINI®

Field Emission Scanning Electron Microscope (FESEM)

with a high-performance, focused ion beam (FIB)

system. Applications are as diverse as subsurface root

cause failure analysis, high precision TEM sample

preparation, nano-structuring and E-beam lithography.

The system consists of live E-beam imaging during

FIB operation, a compact, five-channel gas injection

system and a large ultra-precise specimen stage, satis-

fying even the most demanding applications. It is a

state-of-the-art combination of real-time 3D analysis,

nano-scale manipulation and an imaging tool.

CrossBeam®1560XBThe large chamber system with the refined 6" super

eucentric stage and the 8" integrated airlock offers the

perfect solution for full wafers and cross sectional

semiconductor applications, and for users who need to

analyse a variety of large samples.

● Ultra high resolution FESEM with unique GEMINI®

column and high performance CANION FIB column

● CrossBeam® operation: high resolution live imaging

during milling, polishing and deposition

● Multi channel gas injection system for deposition

and enhanced or selective etching

● Super eucentric, fully motorized 6 axis stage

The Ultimate Research Tools

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Nano-scale 3D Analysis Tool

CrossBeam®1540EsBThe 1540EsB CrossBeam® tool comprises a fully

integrated Energy and angle selective Backscattered

electron (EsB) detector. The instrument offers ultra

high resolution for surface sensitive SE imaging and

compositional information through BSE imaging. The

new EsB detection principle features an integrated

filtering grid to enhance the image quality and requires

no additional adjustments. The EsB detection principle

is less sensitive to edge contrast and charging effects.

Therefore the accuracy in measurements of interfaces,

particles and features is increased.

● Ultra high resolution FESEM with unique GEMINI®

column and high performance CANION FIB column

● High efficiency EsB detector for compositional

information

● Ultra high resolution BSE imaging at very short

working distances

● Excellent Z-contrast for optimum analytical

information

● Ideal for precise interface, particle and feature

measurements

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CANIONThe CrossBeam® series make use of the high perfor-

mance CANION FIB column. The superior ion optical

concept of the CANION FIB column provides excellent

resolution, high current densities and a large beam

voltage range between 3 kV and 30 kV. The ion beam is

generated in a high brightness LMIS (liquid metal ion

source) and focused onto the specimen by an opti-

mised electrostatic two lens system. Stabilization of the

emission current and the selection of different probe

currents is totally computer controlled. This gives the

user full advantage in automation processes and ease

of use. All alignments for different probe currents and

beam voltage settings are stored via the SmartSEMTM

operating system and can be easily selected by a click

of a button. An integrated Faraday cup allows accura-

te probe current measurements during the operation.

● Excellent imaging resolution < 7 nm

● Extended probe current range 1 pA - 50 nA

● High brightness LMIS (liquid metal ion source)

● Electrostatic two lens system

● Totally computer controlled

● Large voltage range 3 kV - 30 kV

● Integrated electrostatic high speed beam blanker

● Integrated Faraday cup for accurate probe

current measurements

● 7 mechanical apertures

Ion Optics

Ion optical layout of the CANION ion column.

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Comparison of the physical properties of different emitter types. The CrossBeam® tool makes use of Schottky FE for the SEM column and LMIS for the FIB column.

Operating modes of the CANION ion column. Telecentric beam path for optimum imaging conditions (right) andcollimated beam path for high probe currents (left).

LMIS

Condenser lens

Apertures

Beam blanker

Faraday cup

Scan and deflection

Final lens

Emitter

Condenser lens

Aperture

Final lens

The CrossBeam® Concept

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System LayoutThe CrossBeam® tools combine the

imaging and analytical capabilities

of a high resolution field emission

SEM (FESEM) with a high perfor-

mance FIB column into one inte-

grated instrument. In the case of

the CrossBeam® tool the final lens

of SEM is designed as a magne-

tic/electrostatic compound lens.

This layout has the advantage that

no magnetic field interferes with

the ion beam and the SEM can be

operated at nm resolution during

the ion milling process. This layout

allows full control over the total

process and gives an excellent end-

point detection and cut localization

for defect review and failure ana-

lysis.

Together with a multi-channel gas

injection system for metal and

insulator deposition and for enhan-

ced and selective etching the

CrossBeam® workstation is a very

powerful analytical and imaging

tool for a wide range of appli-

cations within the semiconductor

industry as well as for material

science and life science appli-

cations.

Schematic layout of the CrossBeam® tool. The electron beam and the ion beam coincide at a point 5 mm below the final lens of the SEM.

CrossBeam® 1540XB equipped with FIB and gas injection systemfor 5 different gases.

FIB column

CCD camera &

illumination

GEMINI® column

In-lens detector

SE detector

EDS detector

Gas injection

system (GIS)

The CrossBeam® Concept

Layout of the CrossBeam® specimen chamber. The flexible port configuration meets every analytical requirement.

BSD-port

QMS-port

GIS-port

FIB Column

EBSP/CCD-camera port

EDS-port

In-lens Detector

Universal Port

SE Detector

CCD-camera

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Chamber DesignThe flexible chamber design of the

CrossBeam® tools provides full

compatibility to all analytical requi-

rements. Two CCD cameras monitor

the inside of the specimen chamber

to provide the operator with full

information when handling large

and special shaped samples. Many

additional ports provide the capa-

bility of adding various detectors,

airlocks and analytical equipment

making the CrossBeam® system the

ultimate 3D analysis tool.

Imaging ModesA CrossBeam® tool can operate at

three different imaging modes. By

blanking the ion beam and only

using the electron beam for imaging

the system operates as a high

resolution field emission SEM. The

second imaging mode uses the ion

beam while the electron beam is

blanked. This FIB imaging mode is

used for grain analysis, voltage con-

trast imaging and defining of mil-

ling areas. The last imaging mode is

the so called CrossBeam® operati-

on mode: Both beams are turned on

and while the ion beam is milling a

defined area, the SEM is used to

image the milling process at high

resolution in real time. This enables

the operator to control the milling

process on a nanometer scale and

to perform extremely accurate cross

sections and device modifications.

If the system is used as a

high resolution SEM only

the ion beam is blanked

and the SE signal is syn-

chronized to the SEM scan.

In this operational mode

the system can be used as a

high resolution FESEM with

no limitations.

If the system is used as a

FIB, only the SEM beam is

blanked and the signal is

synchronized to the FIB

scan. This mode is used for

channelling contrast ima-

ging, voltage contrast ima-

ging and for defining mil-

ling patterns on the sample

surface.

Both beams are scanned

completely independent of

each other and the SED

Signal is synchronized to

the SEM scan. This results

in the CrossBeam® opera-

tion feature: The ion milling

process can be imaged

using the SEM in real-time.

SEM imaging FIB imaging CrossBeam® operation

Electron Optics

Dramatic reduction of objective lens aberrations in the low kV range.

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GEMINI®

The CrossBeam® has been built around the unique GEMINI®

lens design which has many advantages over classical lens

designs:

The most important feature is the decreasing aberrations with

decreasing beam energy. Therefore it delivers superb resolution

down to 100 V and at 30 kV its resolving power is unsurpassed.

The high-angled GEMINI® objective lens body allows 56° tilt of

large specimens (e.g. 6" wafers) at a working distance as low

as 5mm. The analytical working distance for EDS analysis with

a take-off angle of 35° is only 5 mm - suitable for high resolu-

tion imaging. The GEMINI® objective lens consists of a high

performance magnetic lens with an inserted electrostatic lens.

The GEMINI® concept has overcome the problem with classical

objective lens designs which immerses the specimen in the

magnetic field prohibiting imaging of magnetic samples. The

GEMINI® magnetic lens is shaped to minimise the magnetic

field at the specimen. Therefore high resolution imaging of

dia-, para-, or ferromagnetic samples is possible with very

short working distances.

The magnetic/electrostatic lens combination is equivalent to an

optical lens triplet which increases the incident beam aperture

angle at the specimen and hence improves resolution. The

increase of the optimum beam aperture angle also provides a

larger electron probe current and hence generates a superior

signal to noise ratio of the image. The lens control system with

integrated condenser control will always select the optimum

beam aperture for any combination of working distance and / or

selected energy. Consequently the FESEM delivers excellent

image contrast even at the resolution limit. A single-stage

beam scanning system is integrated in the GEMINI® lens, just

in front of the electrostatic lens gap. Therefore, the transverse

chromatic and other scanning aberrations have been mini-

mised. The instrument operates without distortion at TV-scan-

ning speed from the lowest (12 x) to the highest (900,000 x)

magnification. In particular, no switch-over is required bet-

ween a low magnification mode and a high resolution mode.

The GEMINI® objective lens provides outstanding

resolution and image quality, especially at low

beam voltages, without any compromise in opera-

tional convenience.

GEMINI® bias concept.

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100 nm

Semiconductor Applications

Low voltage electron backscatter image (EsB) of a thin diffusion barrier between copper lines and oxide material in a computer chip. The electron energy is 2 kV.

Cross section through a semiconductor device. SEM image on the left and FIB image on the right. The FIB image provides additional voltage contrast information. Note the bright and dark metal lines in the right image.

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100 nm

1 µm 1 µm

The CrossBeam® workstations deliver extraordinary

results for semiconductor applications. The CrossBeam®

workstations are designed to meet the most deman-

ding applications of failure analysis and process de-

velopment. Imaging of nonconductive samples, cross

sections and voltage contrast applications are no

problem for the CrossBeam® workstations.

The use of various detector signals and primary beams

simultaneously opens up new dimensions of informati-

on about the sample. While the electron beam genera-

tes ultimate high resolution information about the

sample surface and composition, the ion beam provi-

des data for voltage contrast and channelling contrast.

The excellent low voltage imaging capabilities of the

GEMINI® SEM column make the CrossBeam® the ideal

tool to image photo resist, polymers, oxides and other

non conductive samples in their natural state in high

resolution.

High resolution low voltage imaging of a photo resist structureon a silicon substrate. The electron energy is 0.8 kV!

Dark-field STEM image of copper plugs.

Example of a voltage contrast application to detect defects in a via chain.

SEM imaging: Cross section through a photo-resist structure. The nonconductive sample is uncoated. Accelerating voltage 1 kV. Note the depth of focus in the image.

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100 nm

200 nm

100 nm

10 µm

For material science applications in nanotechnology,

developing new materials, processes and materials

characterization the CrossBeam® tools offer the most

versatile combination of an ultra high resolution

FESEM and an ultra high performance FIB.

Non conductive samples

Due to its natural charge compensation concept (SEM

and FIB simultaneously) the CrossBeam® tool is able to

cut into non conductive material in its natural state

without coatings. This makes quality and process

control on interfaces between conductive and noncon-

ductive material extremely easy.

Material Science Applications

Higher magnification of the details reveal the origin of the defect at the interface between substrate and coating. By using the live imaging capabilities of the CrossBeam® tool the milling process can be stopped exactly at the position of interest.

Defects in a DLC (Diamond like carbon) coating on a hard metal substrate.

Cross section through the surface defects.

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Site specific investigation of interfaces and buried

layers

In many industrial applications coatings of certain

surfaces show faults. To investigate the problem in

the coating process and to find the origin of conta-

mination or a process failure a dedicated site specific

failure analysis is needed. In the example below a DLC

coating showed uniform bubbles on the surface. To

find the process step that caused the problem the

sample was cut in the CrossBeam® tool and by using

the real time imaging capability, the cause of the pro-

cess failure could be found easily.

10 µm

1 µm

2 µm

1 µm

To investigate everyday samples the

CrossBeam® tool can be used for any

sample. Even totally nonconductive

samples like paper, paint and polymers

can be investigated in their natural

state without any sample preparation

and coating.

Cut through the emulsion layer of a photographic film. The three layers of silver particles representing the three colours are clearly visible. The sample is uncoated.

Cross section through the surface of a coke can. The internal structure of the paint layer consisting of clear paint andcolour pigments is clearly visible. The interface between the paint andthe metal is clearly resolved. The sample is totally uncoated.

Low voltage backscatter image of the cross section for material contrast.The paint particles in the laser print are clearly resolved. Electron energy is 1 kV.

In-lens image of the cross section for surface information.

Laser prints on paper. The sample is completely uncoated to avoid artefacts due to preparation effects.

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Paint

Metal

2 µm

10 µm

2 µm 2 µm

1 µm

To investigate the embedding of implants into bone

tissue and connective tissue, or the coupling of recor-

ding or stimulation electrodes to neural tissue, the

precise knowledge of the interface (structure, chemical

composition, internal layers, etc.) between cell tissue

and implant or electrode material is essential. In elec-

tro-physiology the exact knowledge of the interface

between cell tissue and stimulation or recording elec-

trodes contributes to the interpretation of the recorded

signals. Furthermore the understanding of mechanisms

influencing the behavior of cells on micro structured

surfaces could help to optimize the surface of future

implants.

The investigation of the interface between cell tissue

and hard materials like silicon etc. is mostly limited to

the investigation of epoxy replicas of the microstruc-

tures. This is due to the limitations of the ultramicro-

tomy technique for cutting hard materials like silicon,

glass, ceramics etc.

Biological Applications

30 kV STEM image of kidney cells.

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To overcome the disadvantages of the microtome,

Carl Zeiss SMT has developed a fast preparation tech-

nique that allows a site specific investigation of the

real interface between silicon microstructures and cell

tissue at high resolution in a CrossBeam® tool.

Cross-Sections of embedded osteoblasts. The Cell tissue was embedded into epoxy and then cut in the CrossBeam® tool. Sample courtesy NMI,Reutlingen, Germany.

1 µm

1 µm 1 µm

Fibroblast cells grown on Si microstructures. The sample was cross-sectioned and imaged in SEM mode in a CrossBeam® tool. Sample courtesy NMI, Reutlingen, Germany.

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Sample preparation

Fibroblasts were cultured on titanium coated Si micro-

structured Si wafers. The wafers were sterilized in 70 %

ethanol, exposed to UV light and incubated in tissue

culture medium overnight before seeding the cells.

The cells were then washed in buffer, fixed in 2.5 %

buffered glutaraldehyde (pH 7.4) for 30 min, postfixed

in 1 % OsO4 and dehydrated in a series of ethanol.

The 70 % ethanol step was performed with ethanol

saturated with uranyl acetate. After dehydration, the

specimens were embedded in Araldite.

1 µm 200 nm

200 nm 2 µm

Gas Chemistry

The CrossBeam® instruments provide a full solution for

sophisticated gas chemistry. An integrated 5 channel

gas injection system (GIS) provides full capability for

metal and insulator deposition, enhanced etching,

device modification etc. The GIS is designed for easy

operation and quick changes of the operating gas.

The compact GIS is fully computer controlled and

fully automated.

● Compact design

● Five individual gas lines

● No cross contamination

● Single port mounted

● Five separate precursor reservoirs

● Fully software controlled and integrated

● E-beam deposition and Ion beam deposition

possible

Deposition applications

Metal and insulator depositions are used for various

purposes. Examples are protective layers for TEM sam-

ple preparation, conductive connecting layers between

electrodes or the generation of probing and contact

pads on computer chips.

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Deposition Process: the incoming precursor molecules are adsorbed to the substrate surface. If a precursor molecule is hitby a charged particle beam, the molecule is decomposed and the central ion is bound to the surface. It is possible to use theion beam or the electron beam for deposition.

Protective metal Layer on a semiconductor device for TEM sample preparation.This layer protects the sample surface during the ion milling process of generatinga thin lamella.

1 µm

Reactive etching

To avoid redeposition of sputtered material and to

enhance the milling rate on many materials the GIS is

used for inserting special precursor gases into the spe-

cimen chamber. These form volatile reaction products

with the substrate after being activated by the ion

beam.

Gas Chemistry

Photonic crystal structure in a GaAs substrate. The pattern was created by using a lithography system and reactive etching with XeF2 to avoid redeposition of sputtered material. Note the extremely smooth base and the rectangular sidewalls of the structure.

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Reactive etching process: incoming precursor molecules adsorb to the substrate and are activated by a charged particle beam.The activated molecules form reaction products with the substrate atoms that are volatile. This process leads to a chemically enhanced etching process.

W- Probing pads for electrical measurements on small contacts. The contact pads give easy access to the small contacts on the sample.

Small Pt dots and lines showing a resolution of about 20 nm for ionbeam deposition.

2 µm 100 nm

500 nm

Ion Beam Lithography/Micromachining

Microlens on a glass fibre surface. Structure was patterned by using a Raith Elphy Quantum lithography system. Sample courtesy of INFM Trieste.

Examples of photonic crystal structures in GaAs. The structures show perfect flat sidewalls and very high aspect ratios. To achieve the best results the structures were patterned using reactive ion milling.

For applications in the micro cosmos e.g. optical cou-

plings of micro and nano devices, photonic crystals etc.

put a high demand on micro machining capabilities.

The CrossBeam® tool is the ideal instrument to provide

micro machining and micro patterning solutions for

current and future nano scale applications.

Micro optics

If microstructures need to be connected for optical

information exchange, high precision micro optics are

needed.

Optical parameters of the micro lens:

Lens curvature: 28.5 µm, lens diameter: 10 µm; focal

length: 58.6 µm, sag height: 1.0µm; wavelength:

1550 nm.

Photonic crystals

Photonic crystals put high demands on surface rough-

ness, high aspect ratios and precise micromachining

capabilities.

Micromachined FIM tip. Sample courtesy Université de Rouen.

FIM/STM tip manufacturing

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10 µm

2 µm

1 µm500 nm 200 nm

Nanomanipulation and Nano Probing

Micromanipulation of a TEM sample. The lamella can be easily transferred to a copper grid.

Micro probing tips approaching electrical contact pads on a microchip.

Schematic of the CrossBeam® geometry with integrated nanomanipulators.

For manipulation and probing applications (TEM Lift-

out , electrical probing etc) a set of micromanipulators

can be integrated into the CrossBeam® tool. This

converts the instrument into a nano workbench.

For electrical current measurements on small semi-

conductor devices nano probing modules are needed.

By integrating these modules into the CrossBeam® tool

measurements on a nanometre scale become possible.

Electrical measurements can be carried out even down

to the sub nA-range on microelectronics devices.

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2 µm

10 µm

TEM Sample Preparation

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The Lift-out technique for TEM sample preparation. The sample is thinned and cut out of the substrate. Afterwards the sample is lifted out and transferred to a TEM Grid by use of a Lift-out tool.

Metal deposition.

Final thinning until electron transparency and cut out.

Rough milling.

Final sample on TEM grid.

Final sample.

The CrossBeam® tool opens up a new dimension in TEM

sample preparation. As the sample can be imaged at

high resolution in realtime during the whole thinning

process an unsurpassed accuracy in TEM sample pre-

paration is achieved. The risk of destroying a sample

during preparation is reduced to a minimum. In additi-

on the ion milling process can be automated by using

the sophisticated automation routines provided in

SmartSEMTM.

By adding internal Lift-out tools to the CrossBeam® tool

the whole TEM preparation process can be handled

in-situ inside the vacuum of the instrument.

External Lift-out

FIB

SEM

Lift-o

ut too

l

1 µm

2 µm

1 µm

20 µm

1 µm

Geometrical position of the sample and the detectors duringion milling in the CrossBeam®.The In-lens detector is located in front of the sample andrecords information about thesample surface. The ET (Everhart-Thornley)detectector is located behind thethe sample and records SE thatare emitted from the reverseside of the sample. This signal provides informati-on about the electron transpa-rency of the sample.

Live imaging of semicon-ductor TEM sample duringion milling in split screenmode. While the In-lensdetector on the left dis-plays information about the sample surface theEverhart-Thornley detector signal on the right simultaneously provides informationabout the transparency.

In-lens Detector

SEM

FIB

ET-Detector

ee

e

e

21

In-situ Lift-out: After rough milling the tip of the Lift-out toolis welded to the lamella by using metal deposition.

The sample is cut out and lifted out of the substrate.

The lamella is transferred to a TEM grid and welded to thegrid by using the metal deposition of the GIS.

Final step: After cutting off and retracting the tip, the sample isthinned to electron transparency.

As the sample gets thinner the primary electrons start

penetrating the sample and generate secondary elec-

trons on the reverse side. These electrons can be detec-

ted by using the Everhart-Thornley detector which is

geometrically located behind the sample. This signal

gives direct information about the thickness of the

sample: The thinner the sample, the brighter the

image. At the same time the sample surface can be

imaged using the In-lens detector which is geometri-

cally located in front of the sample and collects mainly

secondary electrons which are emitted from the sample

surface. By combining both signals during the ion

milling in a split screen mode all of the sample data

(location, surface detail and thickness) can be dis-

played at the same time.

In-situ Lift-out

Copper grid

Metal depo

2 µm

2 µm 1 µm

2 µm

2 µm

EDS

The CrossBeam® series combine ultra high resolution

imaging with full analytical capabilities. The compact

design enables an analytical working distance of only

5 mm with a take off angle of 35°. The short working

distance together with the high take off angle are ideal

to combine high resolution imaging with full quantita-

tive EDS analysis.

Semiconductor applications

Material Science applications

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EDS mapping of a Pentium 4 chip.

FIB image of a Ni - Mo multi layer sample. The two dots 1 and 2 indicate the analysis points of the EDS spectra.

EDS mapping of the elements Ni and Mo.EDS spectrum taken from pos. 2 indicating an Mo layer.

EDS Spectrum taken from pos. 1 indicating a Ni layer.

1 µm

1 µm

1 µm

1

2

3D EBSD

EBSD is now an important tool for material characte-

rization showing the crystal structure and the texture

of polycrystalline materials in the form of crystal orien-

tation maps (COM). The CrossBeam® workstations with

a large analytical specimen chamber and the high cur-

rent GEMINI® column is ideally suited to perform EBSD.

By using the advanced image recognition and image

registration capabilities the serial process of FIB cut-

ting and EBSD Mapping can be totally automated.

Recrystallisation around a Laves-phase precipitation in a hot rol-led Fe3Al-base alloy SE-image of the microstructure.

3D Reconstruction of the Laves-phase precipitation using the orientation maps derived from the 3D image stack.

3D Image stack of orientation maps.

EBSD pattern.

Data Cortessy of S. Zaefferer, MPIE Düsseldorf, Germany

23

STEM - Scanning Transmission Electrofor the CrossBeam® Series

Microtome section of a kidney sample (STEM bright-field).

24

STEM detector assembly.

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Laser dots in a Al Ni multi layer structure (STEM bright-field).

By using a STEM (Scanning Transmission Electron Microscopy)

detector the information limit for the CrossBeam® FESEMs can

be extended beyond the nanometer range. A resolution of

0.8 nm at 30 kV is now readily attainable and gives additional

nano-scale information. The resolving power of the

CrossBeam® FESEM can be used to save processing time on

TEM systems for high resolution applications and enables high

sample throughput for quality assurance applications and

routine type measurements.

Typical application fields are:

● Materials analysis (polymer, ceramics, nanoparticles)

● Semiconductors (FIB lamellas from devices)

● Life science (histology, pathology)

The newly developed proprietary CrossBeam® Multi-Mode

STEM detection system delivers enhanced image quality by

real-time simultaneous detection of BF, DF, and orientated DF

signals, without realignment at any position.

CrossBeam® Multi-Mode STEMThe CrossBeam® Multi-Mode STEM detection system comprises

two parallel diode detector surfaces. The DF detector surface

has been divided into specific areas to allow orientated DF

imaging. The specimens are mounted in a carousel type TEM

grid holder, which holds 6 specimens. The CrossBeam® Multi-

Mode STEM detector includes a complete retractable assembly

with high precision adjustments for optimum alignment and

can be used in combination with all CrossBeam® detectors.

Advantages of the Multi-Mode STEM detector:

● Simultaneous imaging of BF and DF

● Orientated DF mode (ODF)

● STEM resolution down to 0.8 nm at 30 kV

● Ease of use with high precision positioning

● Long-life diode detector system

● Imaging of stained and unstained samples

● STEM mode EDX resolution down to 30 nm or less

2 µm

200 nm

on Microscopy

30 kV STEM image of a semiconductor sample. Bright-field (left) and dark-field (right) can be displayed simultaneously.

30 kV STEM image of W-plugs in a semiconductor device. Dark-field image (left) and ODF imaging for optimum crystallographic information (right).

25

Signal EnhancementDue to the significantly lower electron beam energies used in

the SEM, the beam-specimen interactions are much stronger.

This enables the possibility to explore subtile contrast mecha-

nisms. The STEM detector enables pure BF or DF imaging to

achieve optimum contrasts and rich imaging details of even

unstained thin sections. Furthermore it also allows EDX analy-

sis of particles down to 30 nm or less. The unique parallel STEM

detector arrangement allows simultaneous imaging and mixing

of BF, DF and orientated DF STEM signals on any position of

the TEM specimen without realignment.

The CrossBeam® Multi-Mode STEM detection system

allows the following six imaging modes:

● BF

● BF and DF added

● DF

● BF and DF subtracted

● ODF

● ODF1 and ODF2 subtracted

System ControlOperation of the CrossBeam® Multi-Mode STEM detec-

tion system and signal processing is controlled by

an additional menu embedded in the SmartSEMTM

graphical user interface.

The STEM controlenables direct selec-tion of DF, BF or ODF signal in normal orinverse mode. The STEM User modeallows user definedconfigurations to bestored and selected.

100 nm

30 nm 30 nm

100 nm

User interface

SmartSEMTM GUI for comprehensive control.

The SmartSEMTM intuitive GUI is the result of the long-

standing experience gained with software controlled

electron microscopes. Carl Zeiss SMT understands that

the quality of the result not only depends on the superb

imaging and analytical properties of the GEMINI®

FESEM column and the Canion FIB column but also on

the ease of operation of the total workstation. For the

CrossBeam® series Carl Zeiss SMT offers a dedicated

user interface for highest performance and easiest

operation.

The SmartSEMTM comprehensive GUI offers full control

over the CrossBeam® workstation with superb functio-

nality integrated into the standard package:

● Macro-Editor with access to over 250 instrument

control functions

● Automatic functions with full manual override

● Comprehensive stage control

● Full annotation and measurement capabilities

● Freely configurable toolbar

● Stage control with special mapping, stage

registration and virtual coordinate functions

Since the versatile concept of the CrossBeam® work-

stations enables a wide range of applications, the

SmartSEMTM user interface can be enhanced with

additional software modules:

● External scan and stage control for EDS

and lithography systems

● API - Advanced Programmable Interface

for full remote control

● DDE - Dynamic Data Exchange to export data

into Office applications

OPENX option for external or remote control as

part of the SmartSEMTM software philosophy enables

3rd party software to be used on the CrossBeam®

workstations or full remote control for EDS,

E-beam/Ion-beam lithography and stage navigation

applications.

26

Powerful Macro Editor with easy access to all system parameters.

27

Technical Data

CrossBeam®1540XB Essential Specifications NEON 40 CrossBeam®1560XB CrossBeam®1540EsB NEON 40EsB

Resolution SEM

Resolution FIB

Probe Current SEM

Probe Current FIB

Acceleration Voltage SEM

Acceleration Voltage FIB

Emitter SEM

Emitter FIB

Detectors In-column:

In-lens:

Chamber:

BSD:

STEM:

Specimen Chamber

Specimen Stage

Image Acquisition

Image Display

System Control

Gas Injection System

1.1 nm @ 20 kV

2.5 nm @ 1 kV

7 nm @ 30 kV guaranteed,

5 nm achievable

4 pA - 20 nA

1 pA - 50 nA

0.1 - 30 kV

2 - 30 kV

Schottky Field Emitter

Ga liquid metal ion

source (LMIS)

N/A

High Efficiency annular type (SE)

ET type (SE)

Optional solid state or scintillator type

Optional GEMINI® Multimode BF / DF detector

330 mm ø, 270 mm height

IR CCD-camera included for sample viewing

6-axes fully eucentric, all motorised

X = 102 mm, Y = 102 mm, Z = 43 mm, Z’ = 10 mm

T = -10 - 60°, R = 360° continuous

AWD (analytical working distance): 5 mm

Resolution: from 512 x 384 to 3072 x 2304 pixel, Processing: Pixel averaging, frame averaging, continuous averaging

Two 18’’ TFT monitors with image displayed at 1024 x 768 pixel

Integrated CrossBeam®/SmartSEMTM GUI based on Windows XP® operating system, controlled by mouse, control panel, keyboard and joystick

330 mm ø, 270 mm height

IR CCD-camera included for sample viewing

6-axes fully eucentric, all motorised

X = 102 mm, Y = 102 mm, Z = 43 mm, Z’ = 10 mm

T = -10 - 60°, R = 360° continuous

AWD (analytical working distance): 5 mm

EsB with filtering grid (BSE)

Filtering grid voltage 0 - 1500 V

High Efficiency annular type (SE)

ET type (SE)

Optional solid state or scintillator type

Optional GEMINI® Multimode BF / DF detector

1.1 nm @ 20 kV

2.5 nm @ 1 kV

FIB available as

upgrade

4 pA - 20 nA

FIB available as upgrade

0.1 - 30 kV

FIB optional

Schottky Field Emitter

FIB available as

upgrade

1.1 nm @ 20 kV

2.5 nm @ 1 kV

7 nm @ 30 kV guaranteed,

5 nm achievable

4 pA - 20 nA

1 pA - 50 nA

0.1 - 30 kV

2 - 30 kV

Schottky Field Emitter

Ga liquid metal ion

source (LMIS)

520 mm ø, 300 mm height

IR CCD-camera included

for sample viewing

8" large integrated airlock

210 x 50 mm

X = 152 mm, Y = 152 mm

Z = 43 mm, Z. = 10 mm

T = -15 - 65°

R = 360° continuous

1.1 nm @ 20 kV

2.5 nm @ 1 kV

7 nm @ 30 kV guaranteed,

5 nm achievable

4 pA - 20 nA

1 pA - 50 nA

0.1 - 30 kV

2 - 30 kV

Schottky Field Emitter

Ga liquid metal ion

source (LMIS)

1.1 nm @ 20 kV

2.5 nm @ 1 kV

FIB available as

upgrade

4 pA - 20 nA

FIB available as upgrade

0.1 - 30 kV

FIB optional

Schottky Field Emitter

FIB available as upgrade

Up to 5 gases for selective

etching, enhanced etching,

material deposition,

insulator deposition

GIS available as upgrade Up to 5 gases for selective

etching, enhanced etching,

material deposition,

insulator deposition

Up to 5 gases for selective

etching, enhanced etching,

material deposition,

insulator deposition

GIS available as upgrade

C a r l Z e i s s S M T – N a n o T e c h n o l o g y S y s t e m s D i v i s i o n

Due

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exce

pted

. Ver

. 07-

06 ©

by

Carl

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Carl Zeiss SMT worldwide

Carl Zeiss SMT

Distributor

Global Solution Provider

The Nano Technology Systems Division of Carl Zeiss

SMT provides its customers with total solutions

featuring the latest leading-edge EM technology.

The company’s extensive know-how, meticulously

acquired over 60 years in the field of E-beam tech-

nology, has brought many pioneering innovations to

the market. Our global applications and service

network guarantees fast, reliable and high quality

support sharply focused on customer requirements.

Combined with dedicated upgrade strategies, this

will protect your investment for its entire lifetime.

The core technology embedded in our innovative

products enables us to provide solutions which add

value to our customers’ business.

Enabling the Nano-Age World®

Carl Zeiss NTS GmbH

A Carl Zeiss SMT AG Company

Carl-Zeiss-Str. 22

73447 Oberkochen

Germany

Tel. +49 73 64 / 20 44 88

Fax +49 73 64 / 20 43 43

info-nts@smt.zeiss.com

Carl Zeiss SMT Ltd.

511 Coldhams Lane

Cambridge CB1 3JS

UK

Tel. +44 12 23 / 41 41 66

Fax +44 12 23 / 41 27 76

info-uk@smt.zeiss.com

Carl Zeiss SMT Inc.

One Zeiss Drive, Thornwood

New York 10594

USA

Tel. +1 914 / 747 7700

Fax +1 914 / 681 7443

info-usa@smt.zeiss.com

Carl Zeiss SMT S.a.s.

Zone d’Activité des Peupliers

27, rue des Peupliers - Bâtiment A

92000 Nanterre

France

Tel. +33 1 41 39 92 10

Fax +33 1 41 39 92 29

info-fr@smt.zeiss.com

Plus a worldwide network

of authorised distributors

www.smt.zeiss.com/nts