Nano Res.

Electronic Supplementary Material

Controlling the lateral and vertical dimensions of Bi2Se3

nanoplates via seeded growth

Awei Zhuang1,§, Yuzhou Zhao1,§, Xianli Liu1, Mingrui Xu1, Youcheng Wang1, Unyong Jeong2 (),

Xiaoping Wang1, and Jie Zeng1 ()

1 Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Suzhou Nano Science and

Technology, Center of Advanced Nanocatalysis (CAN-USTC) & Department of Chemical Physics, University of Science and Technology of China, Hefei Anhui 230026, P. R. China

2 Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul, Korea § These authors contributed equally to this work.

Supporting information to DOI 10.1007/s12274-014-0657-y

Figure S1 Schematically illustrating how the edge length and thickness of Bi2Se3 nanoplates were calculated: (a) definition of the edge length (d) of hexagonal and triangular nanoplates, and (b) definition of the thickness (h) of a multilayer nanoplate.

Address correspondence to Jie Zeng, zengj@ustc.edu.cn; Unyong Jeong, ujeong@yonsei.ac.kr

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Figure S2 (a), (b) AFM analysis of individual Bi2Se3 nanoplates obtained after 2 and 6 rounds of seeded growth, with precursor solutions injected at a rate of 20 mL·h–1. (c), (d) Corresponding AFM analysis of the nanoplates obtained after 2 and 6 rounds, when the injection rate was 1.5 mL·h–1.

Figure S3 (a) AFM image of part of a Bi2Se3 nanoplate obtained after 6 rounds of seeded growth at the injection rate of 1.5 mL·h–1, wherein a multiple-step architecture can be clearly seen. (b) Thickness of the nanoplate measured along the black dashed line marked in (a). The difference of height between two adjacent layers was determined to be ~1 QL.

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Figure S4 (a)-(d) SEM images of Bi2Se3 nanoplates obtained after 2, 3, 5, and 6 rounds of seeded growth, respectively. Precursor solutions were injected at a rate of 1.5 mL·h–1.

Figure S5 EDX spectrum of the Bi2Se3 nanoplate shown in Fig. 3(a).

Figure S6 XPS spectra corresponding to Bi2Se3: (a) Bi 4f band. (b) Se 3d band.

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Nano Res.

Figure S7 A schematic drawing of the two distinct modes observed for the overgrowth of Bi2Se3 on Bi2Se3 seeds.

Figure S8 (a) Plots of intensity of the A1 1g, E

2 g , and A2

1g modes for Bi2Se3 nanoplates as a function of the number of growth rounds. Precursor solutions were injected at a rate of 20 mL·h–1. (b) Plots of intensity of A1

1g, E2 g , and A2

1g modes for Bi2Se3 nanoplates as a function of the number of growth rounds. Precursor solutions were injected at a rate of 1.5 mL·h–1.

Figure S9 A photograph showing the Bi2Se3 film obtained after filtering over a cellulose membrane with 0.22-µm pore size.