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![Page 1: Controlling Contact Resistance with Probe Tip Shape and ... · SouthWest Test Workshop - 2003 Controlling Contact Resistance with Probe Tip Shape and Cleaning Recipe Optimization](https://reader031.fdocuments.us/reader031/viewer/2022011802/5b16f2df7f8b9a057f8b7d0f/html5/thumbnails/1.jpg)
SouthWest Test Workshop - 2003
Controlling Contact Resistance with Probe Tip Shape
and Cleaning Recipe Optimization
Scott StalnakerClint ChurchillVail McBride
Kelly BurnsideAMI Semiconductor, Inc.
2300 Buckskin RoadPocatello, ID 83201
Jerry Broz, Ph.D.Point Technologies, Inc.6859 N. Foothills Hwy
Boulder, CO 80302
Gene HumphreyInternational Test Solutions, Inc.
2479 Chardonnay WayLivermore, CA 94550
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2
OutlineObjectives / Approach
Materials and Methods
Contact Resistance Characterization
Contact Mechanisms
Non-Destructive Cleaning
Methodology Development
Assessing Incremental CRES Improvement
Application of Methodology to Test Die
Cleaning Recipe Optimization
Summary
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Objectives / ApproachDevelop a systematic methodology to attain stable wafer level test of a 60-um pitch device
Initial characterization using blanket aluminum wafer to assess the probe card behaviorCompare flat tip probe CRES behavior with radius tip behavior using processed wafers with electrically shorted Test Die
Quantify and address device specific contact resistance stability issues
Iterative experiments using FAB processed wafers with two different electrically shorted Test Die
Optimize cleaning recipes to maintain low and stable contact resistance for fine pitch devices
Assess “non-destructive” alternatives to abrasive cleaning that are able to remove adherent pad material
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Materials and MethodsProbe Cards
Cantilevered probe cards built for testing 60-um pitch devicesTungsten-Rhenium (WRe) Flat Tipped ProbesTungsten-Rhenium (WRe) electrochemically polished (ECP) radius tip probes
Test Wafers“Reference” wafers – blanket aluminum with 8000Å metal thicknessProcessed wafers – several different Test Die with electrically shorted bond pads
“Non-destructive” Probe Tip Cleaning MaterialsProbe Polish 201 (PP201)Probe Polish 210 (PP210)
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CASE 1 :CRES Characterization Using a Blanket
Aluminum “Reference” Wafer
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Focus of CASE 1Develop a test methodology to characterize the CRES behavior using a blanket aluminum wafer
Use “best practices” to evaluate CRES vs. Touchdown (TD) behaviorCharacterize CRES stability of a cantilevered, 60-um pitch probe card design Contrast tip shape effects – flat tip vs. radius tip
Apply fundamental electrical contact theory to understand the CRES behavior
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CRES Characterization on Aluminum Wafer
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0 50 100 150 200 250 300 350 400 450 500
Touchdowns on Blanket Aluminum at 2-mil Overtravel
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0 50 100 150 200 250 300 350 400 450 500Touchdowns on Blanket Alumimum at 2-mil OvertravelTouchdowns on Blanket Aluminum at 2-mil Overtravel
Con
tact
Res
ista
nce
(ohm
s)
Con
tact
Res
ista
nce
(ohm
s)
ECP Radius Tip Probes(no cleaning performed)
Flat Tip Probes(no cleaning performed)
Wafers were tested using a standard prober and testhead configurationImages of the probe tips were collected at 50, 100, 500, and 1000 TD intervalsAluminum “tails” were present on the probe tips and along the tip length at each interval
Stable CRES was observed when probing across the blanket Al-waferAdherent materials did not affect the CRES stability of either probe tip shapeMultiple wafers were probed and all yielded similar CRES behavior
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Application of Electrical Contact TheoryFirst Order Approximation Model for Contact Resistance (R. Holm, 1967)
tracefilmwaferprobe
RES RFH
FHC ++
+=
σπρρ4
CRES = contact resistanceρprobe = bulk resistivity of tungsten-rhenium probe ≈ 10E-8 Ωm
ρwafer = bulk resistivity of aluminum ≈ 4E-8 Ωm
H = hardness of the softer material ≈ 1.3E10 g/m2
σfilm = film resistivity ≈ 10E-12 Ωm
F = probe force at overtravel ≈ 2.25 to 3.25 gramsRtrace = trace resistance contribution
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Contact Resistance on Blanket Al-Wafer
Nominal Probe Force at 2-mil Overtravel
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Con
tact
Res
ista
nce
(ohm
s)
0
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CRES limits based on Holm Model with and w/o Rtrace contribution
Flat Tip Probes(no cleaning performed)
Nominal Probe Force at 2-mil Overtravel
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Con
tact
Res
ista
nce
(ohm
s)
0
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Probes may have pierced through aluminum layer of
the wafer
ECP Radius Tip Probes(no cleaning performed)
The film resistance contribution of the blanket aluminum wafer was negligible for both the flat and ECP radius tipped probes.
Lower curve was determined from Holm equation without the trace contribution.Upper curve included an approximate trace contribution, e.g. PCB, test cables, etc…
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Summary of CASE 1The blanket aluminum wafers were useful for evaluating the CRES characteristics and performance of a new probe card design.
Stable CRES, regardless of tip shape, was obtained during this Case Study; however, differences are expected when probing Test Die.
The oxide layer contribution was negligible and CRES behavior could be described by the Holm Model for Contact Resistance
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CASE 2 :CRES Characterization using
Test Die with Electrically Shorted Pads
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Focus of CASE 2Characterize the effects of probe tip shape on the CRES behavior of Test Die A
Flat Tip probe CRES vs. TouchdownsRadius Tip probes CRES vs. Touchdowns
Develop a basic approach to identify incremental improvements in CRES stability
Dramatic changes in CRES behavior are relatively “easy” to identifyIncremental improvement or degradation in overall CRES behavior can be difficult to objectively quantify
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CRES vs. TDs – Test Die A
Touchdowns on Test Die at 2-mil Overtravel
Con
tact
Res
ista
nce
(ohm
s)
0
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0 50 100 150 200 250 300 350 400 450 500
ECP Radius Tip Probes(no cleaning performed)
Touchdowns on Test Die at 2-mil Overtravel
Con
tact
Res
ista
nce
(ohm
s)
Flat Tip Probes(no cleaning performed)
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Stable CRES on the Test Die wafer was not observed535 Test Die were probed on each wafer with no cleaning performedImages were collected at 50, 100, 500, and 1000 (after two wafers) TD intervalsAdherent material was observed on the contact region of the flat tip probes
The ECP radius probes demonstrated “better” CRES behavior than flat tipped~12.7-um radiused tip shape was obtained using electrochemical polishing methods.
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Tip Shape Effects – Flat Tips
Scrub
Aluminum Bond Pad
AlxOy Film
Adherent Material
Electrical Contact
Scrub
Aluminum Bond Pad
AlxOy Film
Adherent Material
Electrical Contact
Region of adherent material increases in size with repeated touchdowns
Adherent material region and electrical contact region will eventually overlap
For a blanket aluminum, the CRES was not significantly affected by the overlap of the contact regions.
Adapted from Maekawa, et al., 2000
Adherent MaterialElectrical Contact
Damage from Analyzer
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Tip Shape Effects – Radius Tips
Scrub
Aluminum Bond Pad
AlxOy Film
Adherent MaterialElectrical
Contact
Scrub
Aluminum Bond Pad
AlxOy Film
Adherent MaterialElectrical
Contact
Aluminum adheres to the rear of the probe
Aluminum adhesion was observed on the “lagging” edge of the probes.
Adherent material and electrical contact regions are separated.
Stable CRES is expected for a tip radius in the range of 7-um < R < 22-um (Maekawa, et al., 2000)Adapted from Maekawa, et al., 2000
Electrical Contact
Adherent Material
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Quantifying Incremental CRES ImprovementCRES vs. Touchdown Charts – the scatter plots demonstrate unstable CRES after multiple touchdowns
Advantages –Demonstrate CRES stability during wafer testIndicative of when cleaning is required to reduce CRES
Disadvantages –Difficult to assess incremental changes in CRES behavior
Cumulative Percentage Charts – the ogive shape reflects the overall “level” of instability during probe
The cumulative frequency distribution (or percentage) plots the number of observations falling in (or below) a specified limit, e.g. maximum CRES. Advantages –
Provides an easy way to compare different large data setsIncremental changes in CRES behavior can be identified
Disadvantages –Do not include a time component
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Tip Shape Effects – CRES Assessment
Contact Resistance (ohms) at 2-mil Overtravel
Cum
ulat
ive
Perc
enta
ge
0
20
40
60
80
100
120
0 2 4 6 8 10 12 14 16
Al-Wafer - Flat Tips, No Clean
Test Die A - ECP Radius, No Clean
Test Die A - Flat Tips, No Clean
IncrementalImprovement
The extended ogive is indicative of unstable CRES during the testing.Aluminum wafer with no cleaning 100% of the probes had CRES < 5-ΩTest Die A - probed with flat tips and no cleaning 70% of probes had CRES < 5-ΩTest Die A – probed with ECP radius tips and no cleaning 90% of probes had CRES < 5-Ω
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Summary of CASE 2Unlike the blanket Al-wafer, stable CRES was not obtained when probing the Test Die
A substantial amount of bond pad material adhered to both flat and radius tipped probes
Similar to Maekawa, et al. (2000), the adherent material and electrical contact regions seemed to overlap on flat tip probes while remaining separated on the radius tipped probesDue to the composition of adherent material from the bond pads, the CRES behavior was dominated by the film contribution.
The cumulative percentage Charts (in conjunction with CRES vs. TDs) provided a useful means of assessing incremental changes in CRES behavior.
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CASE 3 :CRES Characterization of a
Representative 60-um Pitch Test Die
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Focus of CASE 3Quantify the effects of device specific contact resistance stability issues
Two different electrically shorted Test DieTest Die A – representative of a development process flowTest Die B – representative of a process flow for 60-um pitch devices
AMIS currently uses flat tips for wafer sortBoth Test Die were probed with flat tip probe cards
Assess “non-destructive” alternatives to abrasive cleaning that are able to remove adherent pad material
Optimize cleaning recipes to maintain low and stable contact resistance for fine pitch devices
Extend probe card life and reduce the need for maintenance
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CRES Behavior – Test Die A vs. Test Die B
Touchdowns on Test Die at 2-mil Overtravel
Con
tact
Res
ista
nce
(ohm
s)
Test Die A(no cleaning performed)
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()
Touchdowns on Test Die at 2-mil Overtravel
Con
tact
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ista
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(ohm
s)
Test Die B(no cleaning performed)
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()
Test Die B was processed with an emphasis on bond pads for 60-um pitch device test and assembly.Bond pad material adhered to the probe tip contact area; however, this material did not affect the CRES stability like Test Die ATest Die B CRES stability was significantly better than Test Die A
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Probe Tip Cleaning is NeededDestructive cleaning (3-um grit) was necessary to reduce the CRES instability of Test Die A
Probe cards required frequent planarity and alignment adjustmentDebris from the abrasive cleaning was observed across the wafer
For fine pitch probe cards, excessive abrasive cleaning can be quite costly and time consuming
To address the requirements for fine pitch wafer sort, non-destructive cleaning media were evaluated
Probe Polish 201 (PP201)Probe Polish 210 (PP210)
A cleaning frequency of 100-die interval was utilized150-mil of overtravel into the material
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“Non-Destructive” Cleaning for Fine Pitch
100K TDs on3-um grit Lapping Film
1M TDs onProbe Polish Material
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Test Die A Cleaning Optimization
Con
tact
Res
ista
nce
(ohm
s)
Touchdowns on Test Die at 2-mil Overtravel
0
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Flat Tip Probes(no cleaning)
Cleaning PP201(100 die interval cleaning)
Con
tact
Res
ista
nce
(ohm
s)
Touchdowns on Test Die at 2-mil Overtravel
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Con
tact
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(ohm
s)
Touchdowns on Test Die at 2-mil Overtravel
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Cleaning PP210(100 die interval cleaning)
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Test Die A – Cleaning Assessment
Contact Resistance (ohms) at 2-mil Overtravel
Cum
ulat
ive
Perc
enta
ge
0
20
40
60
80
100
120
0 2 4 6 8 10 12 14 16
Al-Wafer - Flat Tips, No Clean
Test Die A - Flat Tips, PP210 Clean
Test Die A - Flat Tips, PP201 Clean
Test Die A - Flat Tips, No Clean
IncrementalImprovement
The cleaning media removed adherent material from the probe tip outer edges.Although some CRES improvements were observed, neither cleaning media was able to properly scrub the entire probe contact surfaceCleaning with lapping film was necessary to reduce the CRES instability
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Cleaning Effects – Test Die BC
onta
ct R
esis
tanc
e (o
hms)
Touchdowns on Test Die at 2-mil Overtravel
0
2
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12
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16
0 50 100 150 200 250 300 350 400 450 500
()
Con
tact
Res
ista
nce
(ohm
s)
Touchdowns on Test Die at 2-mil Overtravel
0
2
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0 50 100 150 200 250 300 350 400 450 500
()
Cleaning PP201(100 die interval cleaning)
Cleaning PP210(100 die interval cleaning)
Con
tact
Res
ista
nce
(ohm
s)
Touchdowns on Test Die at 2-mil Overtravel
0
2
4
6
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0 50 100 150 200 250 300 350 400 450 500
Flat Tip Probes(no cleaning)
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Test Die B – Cleaning Assessment
Contact Resistance (ohms) at 2-mil Overtravel
Cum
ulat
ive
Perc
enta
ge
0
20
40
60
80
100
120
0 2 4 6 8 10 12 14 16
Al-Wafer - Flat Tips, No Clean
Test Die B - Flat Tips, PP210 Clean
Test Die B - Flat Tips, PP201 Clean
Test Die B - Flat Tips, No Clean
IncrementalImprovement
The cleaning media removed the contaminants from the probe tip outer edges as well as the entire probe contact surfaceMaterials that collected on the probe surface from Test Die B seemed less adherent to the probe tip surface and along the tip length
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Summary for CASE 3Device specific bond pad material properties were observed
CRES stability differed significantly between the two test dieTenacity of the adherent bond pad material to the flat probe tipreduced cleaning material efficiency
For the fine pitch Test Die B, non-destructive cleaning recipes were used to achieve low and stable contact resistance
Extend probe card life Reduce frequent off-line maintenanceImproved on-line utilization of the probe card
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Summary of CRES CharacterizationCASE Studies
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Summary of CASES 1, 2, and 3 A systematic test methodology was designed using best practices and applied to understand the CRES characteristics of a developing 60-um pitch device.
Incremental improvements in the CRES behavior resulting from probe tip shape and cleaning recipe were quantified using time based and normalized methodologies.
Optimized non-destructive cleaning recipes were identified and applied to extend probe card life to maintain stable contact resistance.
Additional work is in progress to better quantify the effects of tip shaping and further optimize the cleaning recipes for fine pitch devices.
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Acknowledgements Donna Jungenberg – AMIS Pocatello Sort Operations Manager Christie Jones – AMIS Pocatello Probe Card TechnicianBob Pasley – AMIS Pocatello Test Engineer