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Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Consortium for Metrologyof Semiconductor Nanodefects
Semi-Annual Research Review
20-21 July 2000
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Highlights (1999-2000)
5 active graduate students, 4 undergrads Michael Jordan and Ping Ding receive Ph.D. DDSURF continued development,
Technology Transfer Workshop IV Film capability added to DDSURF 5 Technical Papers SRC Project on Hybrid-Emission Defect
Instrument Funded ($100k/yr for 3 years)
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Tracking Consortium Graduates
Warner, Tom M.S. Particle ID by Scattering Intel
Starr, Greg Ph.D. Patterned Wafer Inspection Intel
Edwards, Ryan B.S. Standards VLSI Standards, Three-Five Sys.
Bionda, Pierre M.S. Via Inspection Bio-tech – neuron detection
Suresh, L. Post-doc Visible, EUV Scattering KLA-Tencor
Jordan, Michael Ph.D. (1/00) Bulk Si Defects Motorola
Ding, Ping Ph.D. (5/00) CMP Defect Detection Applied Materials
Hager, Jack M.S. (5/00) Epi Defect Characterization Intel
Nebeker, Brent Ph.D. (5/00 Computational Scattering Applied Materials (Internship)
Valencia, Amado M.S. (8/00) Particles on Films Intel
Buckner, Ben Ph.D. (12/00) Hybrid DUV Inspection AMD, Tencor (Internships)
Hafiz, Feras M.S. (12/00) Contamination in Litho Tools SEMATECH (Internship)
Zhang, Haiping Ph.D. (5/01) Epi-Si Defect Detection Applied Materials (Internship)
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Member Organizations
ADE/ADE Optical
AMD
Applied Materials
Duke Scientific
Inspex/Hamamatsu
KLA-Tencor
*cumulative 1996-2000, current members are boldface
Lawrence Livermore Labs
OSI Inc.
Intel
SEMATECH
Sumitomo Sitix
VLSI Standards
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Recently Completed Projects
Silicon Defects and Optical Wafer Inspection Systems
Scatterometer Enhancements
Light Scattering by Particles/Defects on CMP Wafers
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Silicon Defects and Optical Wafer Inspection Systems
Process for Fabrication of Standard Pyramidal Pits in Si
Artifacts Fabricated, Characterized, and Used in Scattering Experiments
Scattering Model Comparison
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Pyramidal Pit (0.53 µm) in Si
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
In-plane, Differential Scatter of Pyramidal Pits in Si
s-polarizationincidence angle 65°wavelength 0.6328 µm
scattering angle (degrees)
DS
C(µ
m²/
sr)
-90 -60 -30 0 30 60 9010-3
10-2
10-1
100
0.76 µm
0.69 µm
0.63 µm
0.51 µm
0.41 µm
0.35 µm
Frame 001 09 Jan 2000 Differential scatter of pyramidal pits, 65° incidence, s-polarizationFrame 001 09 Jan 2000 Differential scatter of pyramidal pits, 65° incidence, s-polarization
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
In-plane, Differential Scatter of0.34 m Pyramidal Pit in Si
s-polarizationincidence angle 65°wavelength 0.6328 µm
scattering angle (degrees)
DS
C(µ
m²/
sr)
-90 -60 -30 0 30 60 9010-3
10-2
10-1
100
101
measuredcalculated
Frame 001 08 Jan 2000 Differential scatter of a 0.35 µm pyramidal pit, 65° incidence, s-polarizationFrame 001 08 Jan 2000 Differential scatter of a 0.35 µm pyramidal pit, 65° incidence, s-polarization
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Scatterometer Enhancement
New visible wavelength scatterometer designed, built, and tested
Provides BRDF measurement capability
Competitive specs
Used in thesis projects
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Light Scattering by Particles/Defects on CMP Wafers
Identified and defined critical CMP defects
Acquired standard defect samples
Dishing correlation as function of materials
Angle-resolved scattering measurements of roughness, patterns, and particles
Experimental results in reasonable agreement with models
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Dishing: Material and Geometry (Pitch) Dependence
W SiO2Modulus of elasticity:Em(W)=59e-6 lb/in2
Em(Cu)=17e-6 lb/in2
Dishing:at L=10 m and PD=1/2D(W)=71.4 nmD(Cu)=144 nm
Cu SiO2
10-1 100 101 102
Linewidth (m)
0
50
100
150
200
250
300
Dis
hin
g(n
m)
PD=1/2
PD=1/3
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Natural Scratch and Artifact
v-shape, 1.3 v-shape, 1.3 m m wide, 4.7 nm wide, 4.7 nm deep scratch on deep scratch on SiOSiO22
v-shape, 0.85 v-shape, 0.85 m m wide, 95 nm deep wide, 95 nm deep scratch on SiOscratch on SiO2 2 - -
made by diamond made by diamond tip on AFMtip on AFM
Consortium for Metrologyof Semiconductor Nanodefects
MechanicalEngineering
Scattering by 0.305 m PSL Spheres on Si Substrate & on SiO2 Film
Si 0.785-mSiO2
-40 -30 -20 -10 0 10 20 30 40 50 60
Scattering Angle, s (deg)
10-6
10-5
10-4
10-3
10-2
10-1
100
dC
sc/d
(
m2/s
r)
ExperimentModeling
0.305 m PSL sphere0.785 m SiO2 filmSi substrate = 632.8 nmi = 70o
s pol
-40 -30 -20 -10 0 10 20 30 40 50 60
Scattering Angle, s (deg)
10-3
10-2
10-1
100
dC
sc/d
(
m2/s
r)
ExperimentModeling
0.305 m PSL sphere
Si substrate
= 632.8 nm
i = 70o
s pol