Complementary N-P Channel Trench MOSFET April. 2010. Version 2.0 6 MagnaChip Semiconductor Ltd. 5 2E...
Transcript of Complementary N-P Channel Trench MOSFET April. 2010. Version 2.0 6 MagnaChip Semiconductor Ltd. 5 2E...
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Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics Symbol Rating
Unit N-Ch P-Ch
Drain-Source Voltage VDSS 30 -30 V
Gate-Source Voltage VGSS ±20 ±20 V
Continuous Drain Current Ta=25
oC
ID 7.2 -6.1 A
Ta=100oC 4.6 -3.8 A
Pulsed Drain Current IDM 30 -30 A
Power Dissipation(1)
Ta=25
oC
PD 2 2
W Ta=100
oC 0.8 0.8
Single Pulse Avalanche Energy(2)
EAS 32 72 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
Thermal Characteristics
Characteristics Device Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
N-Ch RθJA 62.5
oC/W
Thermal Resistance, Junction-to-Case N-Ch RθJC 50
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
P-Ch RθJA 62.5
Thermal Resistance, Junction-to-Case P-Ch RθJC 50
1(S1)
2(G1) 3(S2)
4(G2)
6(D2) 7(D1)
MDS9652E Complementary N-P Channel Trench MOSFET
General Description The MDS9652E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
Features
N-Channel P-Channel
VDS = 30V VDS = -30V ID = 7.2A @ VGS = 10V ID = -6.1A @ VGS = -10V RDS(ON) RDS(ON)
<23m @ VGS = 10V <38m @ VGS = -10V
<30m @ VGS = 4.5V <52m @ VGS = -4.5V Applications
Inverters
General purpose applications
5(D2)
8(D1)
D1
G1
S1
D2
G2
S2
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Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDS9652EURH -55~150oC SOIC-8L Tape & Reel Halogen Free
N-channel Electrical Characteristics (Ta =25oC unless otherwise noted)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.9 3.0
Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - 1.0 μA
Gate Leakage Current IGSS VGS = ±12V, VDS = 0V - - 10
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 7.2A - 15 23
mΩ VGS = 4.5V, ID = 5.0A - 19 30
Forward Transconductance gFS VDS = 5V, ID = 7.2A - 20 - S
Dynamic Characteristics
Total Gate Charge Qg
VDS = 15V, ID = 7.2A, VGS = 10V
- 12.8 -
nC Gate-Source Charge Qgs - 1.9 -
Gate-Drain Charge Qgd - 2.7 -
Input Capacitance Ciss
VDS = 15V, VGS = 0V, f = 1.0MHz
- 635 -
pF Reverse Transfer Capacitance Crss - 82 -
Output Capacitance Coss - 158 -
Turn-On Delay Time td(on)
VGS = 10V ,VDS = 15V, RL = 2.2Ω, RGEN = 6Ω
- 4.2 -
ns Turn-On Rise Time tr - 23.0 -
Turn-Off Delay Time td(off) - 37.0 -
Turn-Off Fall Time tf - 22.0 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.75 1.0 V
Body Diode Reverse Recovery Time trr IF = 7.2A, di/dt = 100A/μs
- 17 - ns
Body Diode Reverse Recovery Charge Qrr - 8 - nC
Note :
1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 15V, VGS = 10V
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P-channel Electrical Characteristics (Ta =25oC unless otherwise noted)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = -250μA, VGS = 0V -30 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA -1.0 -1.9 -3.0
Drain Cut-Off Current IDSS VDS = -24V, VGS = 0V - -1.0 μA
Gate Leakage Current IGSS VGS = ±12V, VDS = 0V - - ±10
Drain-Source ON Resistance RDS(ON) VGS = -10V, ID = -6.1A - 23 38
mΩ VGS = -4.5V, ID = -5.0A - 33 52
Forward Transconductance gFS VDS = -5V, ID = -6.1A - 15 - S
Dynamic Characteristics
Total Gate Charge Qg
VDS = -15V, ID = -6.1A, VGS = -10V
- 25.1 -
nC Gate-Source Charge Qgs - 4.1 -
Gate-Drain Charge Qgd - 4.9 -
Input Capacitance Ciss
VDS = -15V, VGS = 0V, f = 1.0MHz
- 1128 -
pF Reverse Transfer Capacitance Crss - 127 -
Output Capacitance Coss - 218 -
Turn-On Delay Time td(on)
VGS = -10V ,VDS = -15V, RL = 15Ω, RGEN = 6Ω
- 11.6 -
ns Turn-On Rise Time tr - 20.8 -
Turn-Off Delay Time td(off) - 27.6 -
Turn-Off Fall Time tf - 11.6 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V - -0.75 -1.0 V
Body Diode Reverse Recovery Time trr IF = -6.1A, di/dt = 100A/μs
- 21.0 - ns
Body Diode Reverse Recovery Charge Qrr - 13.5 - nC
Note :
1. Surface mounted RF4 board with 2oz. Copper. 2. Starting TJ = 25°C, L = 1mH, IAS = -12A, VDD = -15V, VGS = -10V
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N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage Variation with Source Current and
Temperature
0 1 2 3 4 50
5
10
15
20
25
30
35
40
10V
5.0V
4.5V 4.0V
3.5V
VGS=3.0V
I D [
A]
VDS
[V]
0 1 2 3 4 50
5
10
15
20
125
*Note ; VDS=5.0V
25
I D [
A]
VGS
[V]
0.0 0.2 0.4 0.6 0.8 1.01E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
125 25
-IS [
A]
-VSD
[V]
0 5 10 15 20 25 30 35 4010
20
30
40
50
VGS
=4.5V
VGS
=10V
RD
S(O
N) [m
Ω]
ID [A]
2 4 6 8 100
10
20
30
40
50
60
70
125
25
RD
S(O
N) [
mΩ
]
VGS
[V]
-50 -25 0 25 50 75 100 125 1500.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS
=4.5V
ID=5.0A
VGS
=10V
ID=7.2A
RD
S(O
N),
(No
rmalized
)
Dra
in-S
ou
rce O
n-R
esis
tan
ce [
mΩ
]
TJ, Junction Temperature [
oC]
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Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating
Area
Fig.10 Maximum Drain Current
Vs. Ambient Temperature
Fig.11 Transient Thermal Response
Curve
0 2 4 6 8 10 12 140
2
4
6
8
10
* Note ; ID = 7.2A
VG
S [
V]
Qg [nC]
0 5 10 15 20 25 300
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
Ciss
= Cgs
+ Cgd
(Cds
= shorted)
Coss
= Cds
+ Cgd
Crss
= Cgd
* Notes ;
1. VGS
= 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Cap
acit
an
ce [
pF
]
VDS
[V]
10-1
100
101
102
10-2
10-1
100
101
102
1s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
Rθ ja
=62.5 /W
Ta=25
I D [
A]
VDS
[V]
25 50 75 100 125 1500
1
2
3
4
5
6
7
8
I D [
A]
Ta [ ]
10-5
10-4
10-3
10-2
10-1
100
101
102
103
10-3
10-2
10-1
100
101
0.01
※ Notes :
Duty Factor, D=t1/t
2
PEAK TJ = P
DM * Z
θ Ja * R
θ Ja(t) + T
a
RΘ JA
=62.5 /W
single pulse
D=0.5
0.02
0.2
0.05
0.1
Zθ
ja, N
orm
ali
zed
Th
erm
al
Resp
on
se [
t]
t1, Rectangular Pulse Duration [sec]
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P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Fig.16 Transfer Characteristics
Fig.12 On-Region Characteristics Fig.13 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.14 On-Resistance Variation with Temperature
Fig.15 On-Resistance Variation with
Gate to Source Voltage
Fig.17 Body Diode Forward Voltage Variation with Source Current and
Temperature
0 1 2 3 4 50
5
10
15
20
-10.0V -5.0V-4.5V
-4.0V
-3.5V
VGS
=-3.0V
-ID [
A]
-VDS
[V]
-50 -25 0 25 50 75 100 125 1500.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS
=-10V
ID=-6.1A
VGS
=-4.5V
ID=-5.0A
RD
S(O
N),
(No
rmalized
)
Dra
in-S
ou
rce O
n-R
esis
tan
ce [
mΩ
]
TJ, Junction Temperature [ ]
0.0 0.2 0.4 0.6 0.8 1.01E-4
1E-3
0.01
0.1
1
10
125 25
-IS [
A]
-VSD
[V]
0 5 10 15 20 25 300
10
20
30
40
50
60
70
VGS
=-4.5V
VGS
=-10V
RD
S(O
N) [m
Ω]
-ID [A]
2 3 4 5 6 7 8 9 100
10
20
30
40
50
60
70
80
90
100
*Note ; ID=-6.1A
25
125
RD
S(O
N) [
mΩ
]
-VGS
[V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00
5
10
15
20
* Note ; VDS
=-5V
12525
-ID [
A]
-VGS
[V]
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Fig.18 Gate Charge Characteristics Fig.19 Capacitance Characteristics
Fig.20 Maximum Safe Operating Area Fig.21 Maximum Drain Current vs.
Ambient Temperature
Fig.22 Transient Thermal Response Curve
0 2 4 6 8 10 12 14 16 18 20 22 24 260
2
4
6
8
10
* Note : ID = -6.1A
-VG
S [
V]
-Qg [nC]
0 5 10 15 20 25 300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
Ciss
= Cgs
+ Cgd
(Cds
= shorted)
Coss
= Cds
+ Cgd
Crss
= Cgd
※ Notes ;
1. VGS
= 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Cap
acit
an
ce [
pF
]
-VDS
[V]
10-1
100
101
102
10-2
10-1
100
101
102
1s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
Rθ ja
=62.5 /W
Ta=25
-ID [
A]
-VDS
[V]
10-5
10-4
10-3
10-2
10-1
100
101
102
103
10-2
10-1
100
101
* Notes :
Duty Factor, D=t1/t
2
PEAK TJ = P
DM * Z
θ JC * R
θ JC(t) + T
C
RΘ JA
=62.5 /W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ
Ja, N
orm
ali
zed
Th
erm
al
Resp
on
se [
t]
t1, Rectangular Pulse Duration [s]
25 50 75 100 125 1500
1
2
3
4
5
6
7
-ID [
A]
Ta [ ]
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Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
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