Company Profile Facility - MCV Technologies, Inc.-Microwave

Company Profile MCV Technologies, Inc. was founded in 1995 with extensive experience in thick film, microwave dielectric, LTCC and DC power regulation technologies. Focused on the mission to design and manufacture custom products, we quickly become a volume supplier of thick film hybrid circuits to the commercial wireless communications industries. At MCV Technologies, we continually strive to broaden our product line, as evidenced by our development of monolithic block ceramic filters, metal cavity filters and multiband combiner subsystems. Particularly notable, the recent year has been marked by the design and manufacture of a 7-channel AMPS / GSM / DCS multiband combiner system for the TMRT project. The introduction of 5.8 GHz ceramic filter, ceramic chip antenna for BLUETOOTH, GaAs FET Bias and Protection DC power board and splitter this year further strengthens product lines offered by MCV.

Facility Currently, we utilize a 45,000 sq. ft. facility in Taipei, Taiwan to provide our customers with technically advanced, high quality products at competitive prices. Our facility has been ISO9001, ISO9002, and ISO14001 certified. Our design center located in San Diego, CA has design and application engineering talents to serve the needs of our valued customers. Manufacturing MCV manufacturing capability includes clean room thick film processing laser trimming, surface mount, wire bond, hermetic seal, packaging, automated plating, thick and fine line copper,LTCC, ceramic patch antenna, resonator and filter production.

Quality MCV quality control practices are strictly enforced throughout various phases of production, including vendor qualification, incoming inspection, statistical process control, out-goinginspection and quality assurance. All measuring and testing instruments are calibrated periodically by in-house calibration center using NIST standards.

Service

Our strength lies in materials, processing and RF design. We listen to our customer's needs, no matter large or small.

PRODUCT INDEX

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com

MICROELECTRONICS / PACKAGING

Thick Film Hybrid ………………………………………………………...……….….. 101

Thick Film ………..…………...……….…………………..……………………. 102 Fine Line / Thick Copper Substrate ………………………...……………….. 103 Copper Plated Silver Substrate …………………………...…………………. 104

Module / Packaging ………………………………………………………...……….. 105 LTCC ………………………………………………………...………………………….. 106

MICROWAVE COMPONENTS

Ceramic Bandpass Filters

Monolithic Block Filters ………………………..…………....…………. 201 RF (SMD Type) ………………………..…………....…………………. 202 Thru-Hole ………………………..…………....……………………..…. 203 LTCC ………………………..…………....…………………………..…. 204

Ceramic Duplexers

Monolithic Block ………………………………..…………....…………. 301 RF (SMD Type) ………………………..…………....…………………. 302

Dielectric Resonators

TEM Mode ………….. ………………………………..……………………..… 401 TE Mode …………….. ………………………………..……………………..… 402 High K Substrates ..……………………………..……………..…………….… 403

Antennas

Chip Antenna ..……………………………..………………………………….. 501 GPS Patch Antenna ..……………………………..…………………………... 502 WLAN Patch Antenna ..…………...………..………...…………..…….……. 503

Cavity Filters

Bandpass Filters …………………………………………….………………… 601 Duplexers ……………………………………………….……………………… 602 Multiplexers ……………………………………………….………….………… 603 Notch Filters …………………………………………….……………………… 604

Splitters

5 - 1000 MHz Splitters …………………………………….……………………701 GaAs FET Bias & Protection DC Power Board ………………………………….. 801

MICROELECTRONICS / PACKAGING

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 100

INDEX MICROELECTRONICS / PACKAGING

Thick Film Hybrid ………………………………………………………...……….….. 101

Thick Film ………..…………...……….…………………..……………………. 102 Fine Line / Thick Copper Substrate ………………………...……………….. 103 Copper Plated Silver Substrate …………………………...…………………. 104

Module / Packaging ………………………………………………………...……….. 105 LTCC ………………………………………………………...………………………….. 106

THICK FILM HYBRID

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 7

MCV Technologies, Inc., a volume supplier of thick film hybrid circuits for high frequency communication industry has a 25,000 square feet manufacturing facility. This hybrid operation is ISO 9001 certified by Bureau Veritas for more than ten years. MCV offers thick film hybrid technology, fine line/thick copper substrate, copper plated silver substrate, module and packaging technologies. PRODUCTS

• Metallized Substrates • Custom Resistor Networks • Custom IC Packages • Application Specific Modules

- Industrial - Automotive - RFPA - Wideband - Military

CAPABILITY

• Multi-conductive layer, thru-hole, wrap around • Fine line printing • High precision passive / active / functional trimming • SMT • Wire bonding • SIP / DIP / QFP packages • Selective coating / conformal coating / epoxy potting /

hermetic sealing • High power / surge protection • RF applications • Automated plating (copper, nickel, tin, tin/lead, tri-

metal, silver, gold, palladium, etc.) PRODUCTION FACILITY

MCV thick film hybrid capability includes CAD software, SUN workstation, clean room environment, ESD protection, advanced manufacturing equipments and processes, such as precision screen printers, fast fire furnaces, laser trimmers, pick and place machines and computer controlled test systems. Automated plating lines are offered for surface mount and package application. QUALITY POLICY

MCV quality control practices are strictly enforced throughout various phases of production, including vendor qualification, incoming inspection, statistical process control, out-going inspection, quality assurance, etc. All measuring and testing instruments are calibrated periodically by in-house calibration center using NIST standards.

CONTACT US

MCV provide one of the best hybrid services by focusing on price, quality and delivery. Contact the sales office for a free assessment of your new or existing project. Send detailed circuit, component specifications, mechanical and environmental requirements and any special considerations to Sales Manager. Tel: (858) 755-6080 Fax: (858) 755-6037 or Email: [email protected]

55-6037 www.mcvtech.com 101

mailto:[email protected]

THICK FILM

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 FAX: (858) 755

The following are MCV Technologies Thick Film Hybrid design guidelines. Please consult MCV’s technical staff if you have specific requirements. 1. Conductors:

Fine Gold Ot(e.g. silveCharacteristic

Standard Minimum StandarConductor width 8 5 12 Conductor spacing 8 5 16 Spacing between different material conductors 12 7 16

Conductor to via spacing 12 8 16 Via to via spacing 16 10 20 Conductor isolation in power/ground plane 10 7 16

Conductor to snapped substrate edge 20 10 20

Conductor to snapped substrate edge 6 2 6

2. Vias: Characteristic Standard

Via size 15 Via fill 15 Conductor over via 16 x 16 Wirebond pad size 10 x 10 Via to wirebond pad spacing 10 Via stacking 3 max. Offset via spacing 6

3. Dielectrics: Characteristic Standard

Dielectric to snapped substrate edge 12 Dielectric to diced substrate edge 6 Multilayer conductor to dielectric edge 10 Via to dielectric edge 15 Dielectric stepback 5

4. Crossover: Characteristic Standard

Crossover width 20 Crossover overlap 12 Dielectric overlap 12 Crossover spacing 12 Crossover length beyond dielectric 16

-6037 www.mcvtech.com 102-1

her Materials rs and other golds) d Minimum

6 6

10

12 16

12

10

2

Unit: mils

Minimum 10 10

12 x 12 10 x 10

8 - 2

Unit: mils

Minimum 8 2 6 10 2

Unit: mils

Minimum 12 8 8 10 8

Unit: mils

THICK FILM

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 FAX: (858) 755-6037 www.mcvtech.com 102-2

5. Resistors:

Characteristic Standard Minimum Resistor length 30 10 Resistor width 30 6 Resistor/Termination overlap 12 8 Termination extension 10 6 Overglaze coverage 10 6 Conductor to resistor edge 20 15 Buried conductor to resistor edge 20 15 Resistor to resistor spacing 16 10 Resistor probe pad 16 x 16 10 x 10 Resistor orientation Aligned Random Resistor loops No loop Loop

Unit: mils

6. Solder Pads: Characteristic Standard Minimum

Chip pad extension length 16 10 Chip pad extension width 10 6 Solder pad spacing - 15

Unit: mils

7. Gold/Silver Interface Characteristic Standard Minimum

Overlap length 12 8 Overlap width 12 10 Solder-stop overlap at gold/silver interface 10 6

Glaze stepback 5 2 Glaze width 16 8

Unit: mils

8. Printed Capacitors: Characteristic Standard Minimum

Dielectric overlap, smaller electrode 12 6 Larger to smaller electrode overlap 5 0 Sealing glass / dielectric overlap 12 6

Unit: mils

9. Hole and Edge Wraps Characteristic Standard Minimum

Hole spacing (edge to edge) ≥ (substrate thickness) ≥ 0.5 x (substrate thickness)

Hole to snapped substrate edge ≥ (substrate thickness) ≥ (hole diameter)

≥ 0.75 x (substrate thickness)

≥ (hole diameter) Substrate length and width tolerance (diced edge) ± 4 ± 2

Substrate length and width tolerance (snapped edge) ± 16 ± 6

Conductor overlap hole 10 6 Coated hole annular ring width 12 6

Unit: mils

FINE LINE / THICK COPPER SUBSTRATE


The following are MCV Technologies design guidelines and capabilities for Fine Line / Thick Copper Substrate Technology. Please consult MCV’s technical staff if you have specific requirements. 1. Substrate:

Material Array Size Surface Finishes Standard: 96% Alumina (Other ceramic material also available upon request)

1. 2” x 2” x 0.010” 2. 4.5” x 4.5” x 0.015” 3. 7” x 5” x 0.025”

1. As-fired: 16-35 mils 2. Ground and lapped: 3-5 mils

2. Process Capability: 2.1 Copper Plating Thickness, Width, and Space:

Thickness, T Width (min.) Space (min.) Min. Max. 0.001”<T<0.002” T>0.002” 0.001”<T<0.002” T>0.002”

0.001” ± 0.0003” 0.002” ± 0.0005” 0.003” ± 0.0005” 0.004” ± 0.0015” 0.003” 0.004”

2.2 Vias Via Diameter, Vd Capture Pad Diameter Copper Pullback to Ceramic

Feature 0.008” min.

(For 0.015” ~ 0.025” ceramic) 0.010” > Vd min.

0.005” annular ring min. 0.005” min.

2.3 Perforations

• All copper areas should be larger than 0.25” x 0.25” for perforations. • Standard perforations are 0.010” diameter circles on 0.050” centerlines.

2.4 Surface Finishes Capabilities • Wirebondable Au with Ni diffusion barrier. • Immersion Au (3-5-mils) with Ni diffusion barrier. • Entek OSP over bare copper to provide solderability. • Immersion Ag (3-5 mils) to provide solderability.

2.5 Solder Mask • Liquid Photo Imageable (LPI).

1. Line width / space: 0.006” min. 2. Feature registration: ± 0.005”.

• Dry Film patches available.

2.6 Edge Castellations • Maximum copper thickness: 0.0015”. • Ceramic thickness: 0.015” ~ 0.025”. • Ni/Au finish available upon request. • Optimum castellation design available upon request.

2.7 Feature Registration Tolerances: • Copper to substrate features: ±0.003”. • Copper pullback from substrate features:

1. Copper to scribe: 0.005” min. (0.010” standard). 2. Copper to edge of unplated hole:

! Hole diameter < 0.100”: 0.010” min. pullback. ! 0.100” < Hole diameter < 0.250”: 0.020” min. pullback

3. Saw cutting available upon request.

COPPER PLATED SILVER SUBSTRATE


The following are MCV Technologies design guidelines and capabilities for Copper plated Silver Substrate Technology. Please consult MCV’s technical staff if you have specific requirements. 1. Substrate:

Material Array Sizes (without plated through holes)

Array Sizes (with plated through holes)

Standard: 96% Alumina (Other ceramic material also available upon request)

1. 4.5” x 4.5” x 0.015” – 0.250” 2. 6.0” x 4.0” x 0.025” – 0.250” 3. 6.0” x 5.0” x 0.025” – 0.250”

1. 4.5” x 4.5” x 0.015” – 0.035” 2. 6.0” x 4.0” x 0.025” – 0.035” 3. 6.0” x 5.0” x 0.025” – 0.035”

___________________________________________ * Other than rectangular array available upon request.

2. Process Capability: 2.1 Metallization:

Conductor Thickness Through Hole Plating Thick Film

Silver Plated Copper Conductor

Width (min.) Conductor

Space (min.) Ceramic Thickness

Hole Size

0.00025”-0.0006” 0.001” ± 0.0003” 0.002” ± 0.0005” 0.003” ± 0.0010”

0.010” 0.008” 0.035” 0.015” (All via diameters

must be the same)

______________________________________________ * For tighter tolerance, please consult MCV technical staff.

2.2 Resistors:

Resistance Tolerance Resistance As Printed As Trimmed Resistor/conductor

overlap Resistor Size

0.2 Ω - 1 MΩ ±30% ±1% 0.005” min. 0.020” x 0.020” min. ______________________________________ * Encapsulated resistors available upon request.

2.3 Glass Design

• 0.010” min. overlaps over any edge.

2.4 Registration: Pattern with respect to ceramic Solder mask with respect to conductor pattern

±0.005” ±0.005” ______________________________________________ * For tighter tolerance, please consult MCV technical staff.

MODULE / PACKAGING

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 105-1

MCV Packaging Technology offers three multichip module (MCM) categories:

• MCM-C – Ceramic base substrate using thick film technology.

• MCM-L – Utilize printed-circuit board (PCB) technology of reinforced plastic laminates with copper (Cu) trace.

• MCM-D – Use deposited metal and reinforced dielectrics on a variety of rigid bases.

The following are MCV’s design guidelines and capabilities. Please consult MCV’s technical staff if you have specific requirements. 1. Thick Film Technology

Printing Laser Trimming LTCC Substrate 1. Line width / spacing: 5 mils 2. Line width / spacing: 2 mils

(Fodel Technology) 3. Conductor layer: 3

(each side of substrate) 4. Plug through hole: 8-16 mils

(related to substrate thickness) 5. Through hole printing: 4-30 mils

1. Passive trimming: • Tolerance: 0.1% • Ratio match: 0.05%

2. Active trimming: Voltage / Frequency / Current adjustment

1. Line width / spacing: 4 mils 2. Via diameter: 4 mils min. 3. Shrinkage: 0.2% 4. Embedded inductor and

capacitor

2. PCB Technology with Copper Trace 1. Line width / spacing 3 mils 2. Via Diameter 8 mils typical

4 mils (using HDI process) 3. Conductor layer 8 (with blind via or buried via) 4. Copper trace tolerance ±15% 5. Plug through hole 8 ~ 16 mils

3. Surface Mount Technology

Material Capability 1. Board: FR4, FR5, Getek, LTCC, Alumina,

HDI substrate 2. Solder paste: Sn/Pb (73/37, 62/36/2,

96.5/3.5, 96/4, etc.) and lead free solder

1. 0201 chip component 2. BGA, CSP, QFP placement 3. Solder thickness control 4. Accuracy: ±50 µm 5. Pattern recognition alignment accuracy:

±0.05 mm 6. Non ODP cleaning solvent 7. ICT test

4. Die / Wire Bonding Technology

Die Bonding Wire Bonding 1. 6” ~ 8” wafer ring and multichip dice

assembly 2. Tray packing is available 3. Wafer mapping 4. Die size: 0.254 mm x 0.254 mm min. 5. Die thickness: 0.1 mm min. 6. Bond line thickness control 7. Die location control 8. Accuracy: ±50 µm

1. Bonding area: 115 mm x 95 mm max. 2. Wire diameter: 23-38 µm 3. Loop height control 4. Wire length control 5. Bond pitch: 100 µm min. 6. Bond pad opening: 90 µm x 90 µm min.

MODULE / PACKAGING


5. Flip Chip / Underfill Capability

Flip Chip Underfill 1. Wafer / Tape and Reel / Gel pack / Tray

packing is available 2. Die size: 0.5 mm x 0.5 mm ~

25.4 mm x 25.4 mm 3. Die thickness: 0.254 mm min.

with wafer packing 4. Bump height: 0.254 mm max. 5. Accuracy: ±15 µm

1. Weight control feedback 2. Temperature control: ±3°C during operation

6. Outline Package Capability

1. Metal Lid 2. Ceramic Lid 3. Control coating 4. Transfer molding 5. DIP / SIP / Leadless (special requirement available upon request)

7. HDI Technology Advantage v.s. Conventional Process

Features Conventional 4 Layer Board HDI 4 Layer Board Layer Counts 4 1+2+1 Line Width 5 mils 3 mils Line Space 5 mils 3 mils Via Hole Diameter 14 mils 6 mils Via Pad 24 mils 12 mils Line to Line Space 14.5 mils 7.5 mils Line Pitch 19.5 mils 10.5 mils Routing Density, f (tracks/inch)

51 95

c

d

b

a

b

e

a: line width b: line to pad spacing c: via pad = 12 mil d: resulting spacing line to line (open space routing) e: line pitch = 10.5 mil f: possible routing density (tracks per inch) d = b + c/2 - a/2; e = a/2 + b + c/2; f = 1000/e

MODULE / PACKAGING


Example: RFPA Module Process The following are MCV Technologies RFPA module process flow and capability. Please consult MCV’s technical staff if you have specific requirements.

1. Process Flow: 2. Capability

Process Characteristic Criteria Capability Solder paste thickness 0.12 ± 0.01 mm Cpk > 1.5 Die shear test 1000 g min. Cpk > 1.5 Bond line thickness 8 ~ 20 µm Cpk > 1.33 Die location ±50 µm Cpk > 1.33 Ball shear test 30 g min. (for 1 mil Au wire) Cpk > 1.5 Wire pull test 3 g min. (for 1 mil Au wire) Cpk > 1.5 Loop height 125 ± 25 µm Cpk > 1.33 Wire sweep <10% Cpk > 1.5 Package warpage <4 mils Cpk > 1.5 Package void – surface <10 mils Package void – die area Not allowed Package void – others <20 mils Mark permanency Not allowed Air bubble <20 mils Dimension check < ±0.1%

3. Reliability Test Capability

Test Standard Specification

Precondition Test JEDEC A113

1. Prior SAT inspection 2. Temperature cycling: -40°C ~ +60°C for 5 cycles 3. High temperature baking at 125 ± 5°C, 24 hours 4. Soaking: Level III - 30°C ± 60% RH, 192 hours (standard condition) 5. Convention reflow 3 cycles:

• Average ramp-up rate (183°C to peak): 3°C/sec max. • Preheat temperature 125(+25)°C: 120 sec max. • Temperature maintained above 183°C: 60 ~150 sec • Time within 5°C actual peak temperature: 10 ~ 20 sec max. • Peak temperature rage: 225+5/-0°C • Ramp down rate: 6°C/sec max.

6. Post SAT inspection Thermal Shock

(Liquid to liquid) JEDEC22-A106

Condition C -55°C ~ 125°C 30 cycles

Temperature Cycling (Air to air)

JEDEC22-A104 Condition B -55°C ~ 125°C 100 cycles

Solderability JEDEC22-B102 Steam aging 8 hours

SMT Die Mount

Wire Bonding Overmolding Post Mold Cure

Marking Substrate Mount Saw & Singulation

Die Mount Cure

LOW TEMPERATURE COFIRED CERAMIC (LTCC)


MCV Technologies Low Temperature Cofired Ceramic (LTCC) provides ceramic multilayer substrates for low cost solution in wide range applications including communication, base station, handset, satellite, packaging and military. FEATURES

• LTCC tape materials from dielectric constant 5.0 to 7.8. • Array size from 80 mm to 150 mm square. • Standard number of layers from 2 to 20. • Various conductors are available, such as silver (Ag), gold (Au), and palladium silver (Pd/Ag). • Line width and spacing as small as 100 µm (standard is 250 µm). • Via structure can be buried, stacked, and staggered. • Via size as small as 130 µm (standard is 200 µm). Via pitch is 3x via size. • Buried capacitors, inductors, and resistors are available. • Space saving - cavities for embedding active components on the surface. • Low firing temperature (< 1000°C).

DESIGN RULE

The following are LTCC basic design guidelines. For detailed information, please contact our technical staff. 1. Conductors:

Characteristic Standard Minimum Conductor width (A) 250 100 Conductor thickness 10 5 Conductor spacing (B) 250 100 Conductor to edge (C) 500 250 Solid plane to edge (D) 500 250 Pad to edge (E) 80

Unit: µm 2. Vias:

Characteristic Standard Minimum Shape Circular Via hole diameter (F) 200 100 Via hole cover dot diameter (G) 500 (Via size + 100~150) Clearance to via cover pad (J) 250 100 Via center to edge (H) 500 200 Conductor to via center 650 300 Via to via center spacing (I) 750 (3x via size) Stagger length (center to center) 400 (2x via size)

Unit: µm

D

CAVITY

A B

C

D

E

F G

H

I

J E



INDEX MICROWAVE COMPONENTS

Ceramic Bandpass Filters

Monolithic Block Filters ………………………..…………....…………. 201 RF (SMD Type) ………………………..…………....…………………. 202 Thru-Hole ………………………..…………....……………………..…. 203 LTCC ………………………..…………....…………………………..…. 204

Ceramic Duplexers

Monolithic Block ………………………………..…………....…………. 301 RF (SMD Type) ………………………..…………....…………………. 302

Dielectric Resonators

TEM Mode ………….. ………………………………..……………………..… 401 TE Mode …………….. ………………………………..……………………..… 402 High K Substrates ..……………………………..……………..…………….… 403

Antennas

Chip Antenna ..……………………………..………………………………….. 501 GPS Patch Antenna ..……………………………..…………………………... 502 WLAN Patch Antenna ..…………...………..………...…………..…….……. 503

Cavity Filters

Bandpass Filters …………………………………………….………………… 601 Duplexers ……………………………………………….……………………… 602 Multiplexers ……………………………………………….………….………… 603 Notch Filters …………………………………………….……………………… 604

Splitters

5~1000 MHz Splitters …………………………………….…………………… 701 GaAs FET Bias & Protection DC Power Board ………………………………….. 801



Products Series Features Applications

Bandpass Filters

MBP BP TBP LBP

• Small size / low profile • Wide frequency range • High quality factor (Q) • Reliable performance • Available in monolithic block, PCB, thru-hole,

and LTCC.

Duplexers MDPX DPX C

eram

ics

Filte

rs

• Small size • Wide frequency range • High performance • Available in monolithic block and PCB

• AMPS/CDMA (824 ~ 894 MHz) • GSM (890 ~ 960 MHz) • GPS (1575 ~ 1585 MHz) • DCS (1710 ~ 1880 MHz) • PCS (1850 ~ 1990 MHz) • ISM 2.4 GHz • MMDS 3.5 GHz • ISM 5.8 GHz

TEM Mode MR

• Size available from 2 mm to 12 mm • High dielectric constant • Low temperature coefficient • High quality factor (Q) • Wide range of resonant frequency (from 300 -

5000 MHz)

• Oscillator (DRO / VCO) • Wireless handset • Filter and Duplexer (CDMA / PCS / WLL)

TE Mode MDR

• High dielectric constant • High quality factor (Q) • High frequency stability • Tight tolerance in dielectric constant

• AMPS / GSM / PCS • Microwave filters, combiners, and

oscillators • Dielectric resonator oscillators

High K substrates MDS D

iele

ctric

Res

onat

ors

• High dielectric constant • High quality factor (Q) • Miniaturize the size of MIC • Fine surface finish • Metallized finish available

• Microwave Integrated Circuit (MIC) • Low impedance matching networks

Chip Antenna MA-BC

• Small size and low profile • Wide frequency range • Omni-directional

• 2.44 GHz Bluetooth

Patch Antennas

MA-SSA MA-SSB

Ante

nnas

• Small size and light weight • High quality factor (Q) dielectric • Wide bandwidth and low loss • Low and tight temperature coefficient • Central feeding point terminal • Available in different sizes

• 1.58 GHz GPS • 2.4 GHz WLAN

Bandpass Duplexers Multiplexers Notch

CBP CDPX CMPX CNF

Cav

ity F

ilter

s

• Temperature compensated • Low insertion loss • Available on bandpass, duplexer, multiplexer,

and notch filters

• AMPS / CDMA • Cellular phone • GSM • IMT-2000 • PCS • Trunked Radio System (TRS) • WLL

Splitters MS

Split

ters

• 100% soldering of the cover provides the highest RF integrity (RFI) shielding

• Corrosion resistant finish • Easy access of cable connections • High quality zinc diecast case • Anticorrosive chromate finish • Mounting tabs and grounding block

• MATV • CATV • Cable Modem

DC

Pow

er

Boa

rd GaAs FET

Bias and Protection

GFP

• Provide gate and drain voltages in the correct sequence and levels to insure proper power management

• Proper power supply sequencing occurs when primary DC power is applied

• Compact and economical design reduces power dissipation

• GaAs FET biasing and protection

________________________________________________ * Please contact us for detail information, or visit our website

MONOLITHIC BLOCK BANDPASS FILTERS

11696 Sorrento Valley R

APPLICATIONS

• AMPS/CDMA • GPS • ISM 2.4 GHz • ISM 5.8 GHz

DIMENSIONS TYPICAL PERFORMANCE

ORDERING INFO

••• •

C

A

B

EDX

PART NO . L

W T

CH1 S21 LOG 10 dB/ REF 0 dB

C

PRm

CH2 S11 SWR 1 / REF 1

PRm

MARKER 1 1.663 GHz

10 Oct 2000 13:58:50

1

2 3

4 5

1 : -1 . 7237 dB

CH1 Markers

2 : -1 . 9362 dB1. 64100 GHz

3 : -1 . 8346 dB

1. 68500 GHz

4 : -62 . 663 dB1. 51500 GHz

5 : -61 . 945 dB1. 81000 GHz

4 5

1 : 1. 1806 1 663 . 000 000 MHz

CH2 Markers

2: 1. 14221. 64100 GHz

3: 1. 14711. 68500 GHz

Tolerance Unless Otherwise Specified: ±0.3 Unit: mm

oad, Suite J, San Diego, CA 92121 Tel: (858) 755-60

RMATION

MBP 3 2R 1575 S [1] [2] [3] [4] [5]

[1] Monoblock Bandpass Filte[2] Resonator Size:

• 1.5 = 1.3 mm • 2 = 1.9 mm • 3 = 2.8 mm • 4 = 3.8 mm • 4.5 = 4.3 mm

[3] Number of Resonator [4] Center Frequency [5] Type – S: SMD

P: Pin [6] Bandwidth [7] Version

CENTER

C

GSM MMDS PCS/DCS WLL

80 Fax: (858) 755-6037 www.mcvtech.com 201-1

10 A [6] [7]

r

1 663 . 000 000 MHz SPAN 299 . 000 000 MHz

1

2 3

4: 31 . 8551. 51500 GHz

5: 39 . 563

1. 81000 GHz



SPECIFICATIONS – 2 POLES

Part No. Center

Frequency f0 (MHz)

Bandwidth (MHz)

Insertion Loss

(dB) max.

Ripple in Bandwidth (dB) max.

VSWR in Bandwidth

max.

Attenuation (dB @ MHz)

min.

MBP32R881S25A 881.5 f0 ± 12.5 2.6 1.2 2.3 9 @ 824~849 MHz 6.5@ 914~939 MHz 17 @ 959~984 MHz

MBP42R886S02C 886.0 f0 ± 1.0 3.0 0.5 1.5 17 @ (f0 ± 24) MBP42R886S02D 886.0 f0 ± 1.0 4.0 0.5 1.5 30 @ (f0 ± 24)

MBP32R902S25B 902.5 f0 ± 12.5 2.6 1.2 2.3

27 @ 825 MHz 9 @ 870 MHz 6.5@ 935 MHz 17 @ 980 MHz

MBP42R903S02C 903.0 f0 ± 1.0 3.0 0.5 1.5 17 @ (f0 ± 24) MBP42R903S02D 903.0 f0 ± 1.0 4.0 0.5 1.5 30 @ (f0 ± 24) MBP42R914S02C 914.0 f0 ± 1.0 3.0 0.5 1.5 17 @ (f0 ± 24) MBP42R914S02D 914.0 f0 ± 1.0 4.0 0.5 1.5 30 @ (f0 ± 24) AM

PS /

CDM

A / G

SM /

ISM

900

MBP32R915S26A 915.0 f0 ± 13.0 1.5 0.5 2.0 40 @ (f0 ± 75) MBP32R1554S06A 1554.962 f0 ± 3.0 3.5 0.5 1.5 40 @ (f0 ± 100.0) MBP32R1575S10A 1575.42 f0 ± 5.0 3.0 0.5 1.5 40 @ (f0 ± 100)

MBP4.52R1575S100A 1575.42 f0 ± 50.0 1.5 1.0 2.0 7 @ 1500.42 MHz 20 @ 1625.42 MHz G

PS

MBP32R1585S12A 1585.0 f0 ± 6.0 3.5 0.5 1.5 25 @ (f0 ± 20) MBP22R1842S75A 1842.5 f0 ± 37.5 2.0 0.5 2.0 3 @ (f0 ± 20)

MBP22R1842S75D 1842.5 f0 ± 37.5 2.0 1.0 2.0 14 @ 1705 MHz 4 @ 1920 MHz PC

S /

DC

S

MBP32R1890S20A 1890.0 f0 ± 10.0 3.0 0.5 1.5 25 @ (f0 ± 100) MBP32R2338S13A 2338.750 f0 ± 6.5 3.0 1.0 2.0 25 @ (f0 ± 229.5) MBP42R2403S06A 2403.75 f0 ± 3.0 3.5 0.5 1.5 23 @ (f0 ± 24) MBP42R2436S03A 2436.5 f0 ± 1.5 4.5 0.5 1.5 23 @ (f0 ± 24)

MBP22R2442S84A 2442.0 f0 ± 42.0 2.0 1.0 2.0 19 @ 2192 MHz 14 @ 2692 MHz

MBP22R2450S100A 2450.0 f0 ± 50.0 2.0 1.0 2.0 25 @ 2170 MHz 14 @ 2730 MHz

MBP1.52R2450S100A 2450.0 f0 ± 50.0 2.0 0.5 2.0 23 @ 2170 MHz 12 @ 2730 MHz

MBP42R2463S03A 2463.5 f0 ± 1.5 4.5 0.5 1.5 23 @ ( f0 ± 24)

ISM

2.4

GHz

MBP42R2475S06A 2475.75 f0 ± 3.0 3.5 0.5 1.5 23 @ (f0 ± 24)

MBP22R5250S200PB 5250.0 f0 ± 100.0 2.0 1.0 2.0 20 @ 4800 MHz 15 @ 4875 MHz 5 @ 5625 MHz

MBP22R5800S100PC 5800.0 f0 ± 50.0 2.0 1.0 2.0 25 @ 5425 MHz 10 @ 6175 MHz

MBP22R5800S150PC 5800.0 f0 ± 75.0 2.0 1.0 2.0 ISM

5.8

GHz

MBP22R5880S100PC 5880.0 f0 ± 50.0 2.0 1.0 2.0 25 @ 5505 MHz 10 @ 6255 MHz

_______________________________________ * Other specification available upon request




Part No. Center

Frequency f0 (MHz)

Bandwidth (MHz)

Insertion Loss

(dB) max.


VSWR in Bandwidth

max.


min. MBP43R836S25A 836.5 f0 ± 12.5 3.0 1.0 2.0 18 @ (f0 ± 20) MBP43R845S10A 845.0 f0 ± 5.0 3.5 1.0 2.0 25 @ (f0 ± 20) MBP43R881S25A 881.5 f0 ± 12.5 3.0 1.0 2.0 18 @ (f0 ± 20) MBP33R902S25A 902.5 f0 ± 12.5 2.5 1.0 2.0 30 @ (f0 ± 100) MBP33R947S25A 947.5 f0 ± 12.5 2.5 1.0 2.0 30 @ (f0 ± 100) MBP43R955S10A 955.0 f0 ± 5.0 3.5 1.0 2.0 25 @ (f0 ± 20) MBP23R1410S54A 1410.0 f0 ± 27.0 3.0 1.0 2.0 30 @ (f0 ± 100) AM

PS /

CDM

A /

GSM

/ R

adio

MBP33R1472S40A 1472.0 f0 ± 20.0 2.8 1.0 2.0 20 @ (f0 ± 24) MBP43R1755S30A 1755.0 f0 ± 15.0 3.0 1.0 2.0 15 @ (f0 ± 20) MBP43R1765S10A 1765.0 f0 ± 5.0 3.5 1.0 2.0 25 @ (f0 ± 20) MBP23R1842S75A 1842.5 f0 ± 37.5 3.0 1.0 2.0 30 @ (f0 ± 120) MBP23R1842S75B 1842.5 f0 ± 37.5 3.0 1.0 2.0 5 @ (f0 ± 20) MBP23R1842S75H 1842.5 f0 ± 37.5 4.0 1.5 2.2 15 @ (f0 ± 20) MBP43R1855S10A 1855.0 f0 ± 5.0 3.5 1.0 2.0 25 @ (f0 ± 20) MBP33R1880S60A 1880.0 f0 ± 30.0 2.2 1.0 2.0 20 @ (f0 ± 100) MBP23R1950S60A 1950.0 f0 ± 30.0 3.0 1.0 2.0 25 @ 2140 MHz MBP33R1960S60A 1960.0 f0 ± 30.0 2.2 1.0 2.0 20 @ (f0 ± 100) MBP33R1960S60B 1960.0 f0 ± 30.0 3.3 2.0 2.0 20 @ 1910 MHz

PCS/

DCS

MBP23R1960S60E 1960.0 f0 ± 30.0 3.3 2.2 2.0 20 @ 1910 MHz MBP43R2315S30A 2315.0 f0 ± 15.0 2.5 1.0 2.0 40 @ (f0 ± 100) MBP43R2320S20A 2320.0 f0 ± 10.0 3.0 1.0 2.0 40 @ (f0 ± 150) W

LL

MBP43R2390S20A 2390.0 f0 ± 10.0 3.0 1.0 2.0 40 @ (f0 ± 150) MBP23R2400S54A 2400.0 f0 ± 27.0 3.0 1.0 2.0 30 @(f0 ± 100) MBP23R2440S26A 2440.0 f0 ± 13.0 4.0 1.0 1.8 40 @(f0 ± 100) IS

M

2.4

MBP23R2442S84A 2442.0 f0 ± 42.0 2.5 1.0 2.0 20 @(f0 ± 100)

MBP33R3350S100PA 3350.0 f0 ± 50.0 2.0 1.0 2.0 15 @ 3200 MHz 12 @ 3500 MHz

MBP3.53R3415S30PB 3415.0 f0 ± 15.0 4.0 1.0 2.0 35 @ 3500~3530 MHz

MBP33R3420S40PA 3420.0 f0 ± 20.0 3.0 1.0 2.0

8 @ 3370 MHz 8 @ 3470 MHz 30 @ 3640 MHz 20 @ 3500~3540 MHz

MBP33R3425S50A 3425.0 f0 ± 25.0 2.0 1.0 2.0 15 @(f0 ± 100) MBP33R3425S50PB 3425.0 f0 ± 25.0 3.5 1.0 2.0 25 @ 3500~3550 MHz

MBP33R3450S100PA 3450.0 f0 ± 50.0 2.0 1.0 2.0 15 @ 3300 MHz 15 @ 3600 MHz

MBP3.53R3450S100PA 3450.0 f0 ± 50.0 2.0 1.0 2.0 35 @ 3150 MHz 40 @ 2800 MHz 30 @ 3750 MHz

MBP33R3460S40PA 3460.0 f0 ± 20.0 3.0 1.0 2.0

8 @ 3410 MHz 8 @ 3510 MHz 30 @ 3610 MHz 20 @ 3540~3580 MHz

MBP3.53R3470S130PA 3470.0 f0 ± 65.0 2.5 1.0 2.0

30 @ 2000~2800 MHz 26 @ 3050~3200 MHz 30 @ 3900~4500 MHz 15 @ 5000~6000 MHz

MBP3.53R3470S140PB 3470.0 f0 ± 70.0 2.5 1.0 2.0

30 @ 2000~2800 MHz 24 @ 3050~3200 MHz 30 @ 3900~4500 MHz 15 @ 5000~6000 MHz

MBP33R3475S50PA 3475.0 f0 ± 25.0 3.5 1.0 2.0 25 @ 3550~3600 MHz

MBP33R3480S40PA 3480.0 f0 ± 20.0 3.0 1.0 2.0

8 @ 3430 MHz 8 @ 3530 MHz

20 @ 3560~3600 MHz 30 @ 3700 MHz

MM

DS




SPECIFICATIONS – 3 POLES (continue)

Part No. Center

Frequency f0 (MHz)

Bandwidth (MHz)

Insertion Loss

(dB) max.


VSWR in Bandwidth

max.


min. MBP3.53R3515S30PB 3515.0 f0 ± 15.0 4.0 1.0 2.0 35 @ 3400~3430 MHz

MBP33R3520S40PA 3520.0 f0 ± 20.0 3.0 1.0 2.0

8 @ 3470 MHz 8 @ 3570 MHz

20 @ 3400~3440 MHz 30 @ 3740 MHz

MBP33R3525S50PA 3525.0 f0 ± 25.0 2.5 1.0 2.0 10 @ 3450 MHz 20 @ 3700 MHz 45 @ 3400~3440 MHz

MBP33R3525S50PB 3525.0 f0 ± 25.0 3.5 1.0 2.0 25 @ 3400~3450 MHz

MBP33R3550S100PA 3550.0 f0 ± 50.0 2.3 1.0 2.0 15 @ 3400 MHz 12 @ 3700 MHz

MBP33R3550S200A 3550.0 f0 ± 100.0 2.0 1.0 2.0 15 @ 3300 MHz 15 @ 3800 MHz


MBP33R3560S40PA 3560.0 f0 ± 20.0 3.0 1.0 2.0

8 @ 3510 MHz 8 @ 3610 MHz 30 @ 3780 MHz 20 @ 3440~3580 MHz

MBP33R3575S50PA 3575.0 f0 ± 25.0 3.5 1.0 2.0 25 @ 3450~3500 MHz

MBP33R3580S40PA 3580.0 f0 ± 20.0 3.0 1.0 2.0

8 @ 3530 MHz 8 @ 3630 MHz 30 @ 3800 MHz 20 @ 3460~3500 MHz

MBP3.53R3640S130PA 3640.0 f0 ± 65.0 2.0 0.5 2.0

30 @ 3100 MHz 26 @ 3370 MHz 30 @ 4100 MHz 15 @ 5000~6000 MHz

MBP33R3650S100A 3650.0 f0 ± 50.0 2.0 1.0 2.0 15 @ 3500 MHz 15 @ 3800 MHz

MBP43R3650S100PA 3650.0 f0 ± 50.0 2.0 1.0 2.0 40 @ 3000 MHz 35 @ 3350 MHz 30 @ 3950 MHz

MBP3.53R3680S40PA 3680.0 f0 ± 20.0 2.5 1.0 2.0

17 @ 3600 MHz 17 @ 3760 MHz 35 @ 3420 MHz 35 @ 3940 MHz 30 @ 4100 MHz


MBP33R3750S100A 3750.0 f0 ± 50.0 2.0 1.0 2.0 15 @ 3600 MHz 15 @ 3900 MHz


MM

DS

MBP23R4880S200PB 4880.0 f0 ± 100.0 2.0 1.0 2.0

ISM

5.

8 MBP33R5250S200PA 5250.0 f0 ± 100.0 3.0 1.0 2.0

35 @ 4100 MHz 20 @ 4800 MHz 15 @ 4875 MHz 5 @ 5625 MHz





Part No. Center

Frequency f0 (MHz)

Bandwidth (MHz)

Insertion Loss

(dB) max.


VSWR in Bandwidth

max.


min. MBP64R726S15A 726.0 f0 ± 7.5 2.5 0.5 1.7 38 @ 681 MHz

35 @ 771 MHz

MBP64R771S15A 771.0 f0 ± 7.5 2.5 0.5 1.7 38 @ 681 MHz 35 @ 771 MHz

MBP44R3066S170PA 3066.0 f0 ± 85.0 2.0 1.0 1.7 35 @ ~2666 MHz 45 @ 2716 MHz 35 @ 3316~6000 MHz

MBP44R3125S80PA 3125.0 f0 ± 40.0 3.0 1.0 1.5 65 @ ~2500 MHz 58 @ 2770~2780 MHz 53 @ 3500 MHz

MBP44R3420S40PA 3420.0 f0 ± 20.0 4.0 1.0 1.7

17 @ 3370 MHz 6 @ 3388 MHz 6 @ 3452 MHz 17 @ 3470 MHz 35 @ 3500~3540 MHz 42 @ 3640 MHz

MBP44R3460S40PA 3460.0 f0 ± 20.0 4.0 1.0 1.7


MBP44R3480S40PA 3480.0 f0 ± 20.0 4.0 1.0 1.7


MBP44R3520S40PA 3520.0 f0 ± 20.0 4.0 1.0 1.7 35 @ 3400~3440 MHz MBP44R3560S40PA 3560.0 f0 ± 20.0 4.0 1.0 1.7 35 @ 3440~3480 MHz

MM

DS

MBP44R3580S40PA 3580.0 f0 ± 20.0 4.0 1.0 1.7 35 @ 3460~3500 MHz _______________________________________ * Other specification available upon request

RF BANDPASS FILTERS (SMD TYPE) DIMENSIONS _* S

S

C

O

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-

_________________________________________________ Please consult MCV technical staff for all available dimensions

PECIFICATIONS – 2 POLES Part No.

Center Frequency

f0 (MHz) Bandwidth

(MHz) Insertion

Loss (dB) max.

CDMA BP32R766S25A 766.5 f0 ± 12.5 2.5 BP32R1775S10A 1775.0 f0 ± 5.0 3.0 PCS/

DCS BP32R1855S30A 1855.0 f0 ± 15.0 2.5 WLL BP32R2155S30A 2155.0 f0 ± 15.0 2.5

PECIFICATIONS – 3 POLES Part No.

Center Frequency

f0 (MHz) Bandwidth

(MHz) Insertion

Loss (dB) max.

DMA BP33R881S25A 881.5 f0 ± 12.5 2.5

RDERING INFORMATION

BP 3 2R 1775 S [1] [2] [3] [4] [5]

[1] RF Bandpass Filter [2] Resonator Size [4] Center Frequency [5] Type – S: SMD

[7] Version P: Pin

APPLICATIONS • AMPS/CDMA • IMT-2000 • MMDS • PCS/DCS • WLL

6080 Fax: (858) 755-6037 www.mcvtech.com 202-1


VSWR in Bandwidth

max.


min. 1.0 1.8 1.0 1.8 22 @ 1865 MHz 1.0 1.8 35 @ 1695 MHz 1.0 1.8 35 @ 2030 MHz


VSWR in Bandwidth

max.


min. 1.0 1.8 53 @ 779 MHz

10 A [6] [7]

[3] Number of Resonator [6] Bandwidth

RF BANDPASS FILTERS (SMD TYPE)



Part No. Center

Frequency f0 (MHz)

Bandwidth (MHz)

Insertion Loss

(dB) max.


VSWR in Bandwidth

max.


min. BP64R836S30A 836.5 f0 ± 15.0 3.0 1.2 1.7 18 @ (f0 ± 32.5) CDMA BP64R881S30A 881.5 f0 ± 15.0 3.0 1.2 1.7 18 @ (f0 ± 32.5) BP34R1765S30A 1765.0 f0 ± 15.0 3.5 1.0 1.8 30 @ (f0 ± 90) BP34R1855S30A 1855.0 f0 ± 15.0 3.5 1.0 1.8 30 @ (f0 ± 90) BP34R1880S65A 1880.0 f0 ± 32.5 2.5 1.0 1.5 18 @ (f0 ± 100) PCS/

DCS BP34R1960S65A 1960.0 f0 ± 32.5 3.0 1.0 1.4 45 @ (f0 ± 130)

20 @ (f0 ± 100) BP34R1950S60A 1950.0 f0 ± 30.0 3.0 1.0 1.8 38 @ (f0 ± 60) IMT-

2000 BP34R2140S60A 2140.0 f0 ± 30.0 3.0 1.0 1.8 38 @ (f0 ± 60) BP64R409S07A 409.5 f0 ± 3.5 3.0 0.8 1.7 30 @ 423 MHz BP64R426S07A 426.5 f0 ± 3.5 3.0 0.8 1.7 30 @ 413 MHz BP34R2315S30A 2315.0 f0 ± 15.0 2.7 1.0 1.7 40 @ (f0 ± 160) BP34R2385S30A 2385.0 f0 ± 15.0 2.7 1.0 1.7 40 @ (f0 ± 160)

WLL

BP34R2442S84A 2442.0 f0 ± 42.0 2.5 1.0 1.7 40 @ (f0 ± 160)

BP44R3531S42A 3531.0 f0 ± 21.0 3.5 1.0 2.0

40 @ 3376 MHz 20 @ 3452 MHz 15 @ 3610 MHz 35 @ 3686 MHz MMDS

BP44R3575S50A 3575.0 f0 ± 25.0 4.0 0.8 1.5

40 @ 50~3180 MHz 15 @ 3450~3500 MHz 20 @ 3700 MHz 40 @ 4000~5000 MHz


Part No. Center

Frequency f0 (MHz)

Bandwidth (MHz)

Insertion Loss

(dB) max.


VSWR in Bandwidth

max.


min. BP55R1750S60A 1750.0 f0 ± 30.0 3.0 1.5 1.7 30 @ 1810 MHz BP55R1765S10A 1765.0 f0 ± 5.0 5.0 1.0 1.8 20 @ (f0 ± 20) BP55R1765S30A 1765.0 f0 ± 15.0 3.0 1.3 1.6 40 @ (f0 ± 80) BP55R1855S10A 1855.0 f0 ± 5.0 5.0 1.0 1.8 20 @ (f0 ± 20)

PCS/ DCS

BP55R1855S30A 1855.0 f0 ± 15.0 3.8 1.3 1.6 40 @ (f0 ± 80) BP45R3550S300A 3550.0 f0 ± 150 2.0 1.0 1.7 BP45R3550S300B 3550.0 f0 ± 150 2.0 1.0 1.7 MMDS BP45R3550S300C 3550.0 f0 ± 150 2.0 1.0 1.7


Part No. Center

Frequency f0 (MHz)

Bandwidth (MHz)

Insertion Loss

(dB) max.


VSWR in Bandwidth

max.


min. BP66R1755S10A 1755.0 f0 ± 5.0 10.0 1.0 2.0 22 @ 1765 MHz PCS/

DCS BP66R1845S09A 1845.0 f0 ± 4.5 13.0 3.0 2.0 28 @ 1855 MHz BP66R1410S29A 1410.0 f0 ± 14.5 3.0 1.0 1.5 18 @ (f0 ± 34.5) WLL BP86R1474S05A 1474.0 f0 ± 2.5 12.0 2.8 2.0 15 @ (f0 ± 10)


BANDPASS FILTERS: THRU-HOLE


DIMENSIONS 2 Poles

3 Poles 4 Poles

SPECIFICATIONS

Part No. Center

Frequency f0 (MHz)

Bandwidth (MHz)

Insertion Loss

(dB) max.


VSWR in Bandwidth

max.


min. Poles

TBP62R886P01A 886.0 f0 ± 0.5 2.2 0.5 2.0 25 (f0 ± 45) TBP62R903PS01A 903.0 f0 ± 0.5 2.2 0.5 1.5 15 (f0 ± 45) TBP62R914P01A 914.0 f0 ± 0.5 2.2 0.5 2.0 25 (f0 ± 45) TBP62R914PS01A 914.0 f0 ± 0.5 2.2 0.5 1.5 24 (f0 ± 45) TBP62R927PS01A 927.0 f0 ± 0.5 2.2 0.5 1.5 15 (f0 ± 45) TBP62R931P01A 931.0 f0 ± 0.5 2.2 0.5 2.0 25 (f0 ± 45) TBP62R959P01A 959.0 f0 ± 0.5 2.2 0.5 2.0 25 (f0 ± 45) TBP62R959PS01A 959.0 f0 ± 0.5 2.2 0.5 1.5 24 (f0 ± 45)

2

TBP63R815P25A 815.0 f0 ± 12.5 2.0 0.8 2.0 35 @ 930 MHz

TRS

/ 900

MHz

C

ordl

ess

Phon

es

TBP63R915P28A 915.0 f0 ± 14.0 2.0 0.5 2.0 12 (f0 ± 32.5) 3

TBP64R836P30A 836.5 f0 ± 15.0 2.2 0.8 1.8 18 (f0 ± 32.5)

AMPS

/ C

DM

A

TBP64R881P30A 881.5 f0 ± 15.0 2.2 0.8 1.8 18 (f0 ± 32.5) 4

_______________________________________ * Other specification available upon request ORDERING INFORMATION

TBP 6 3R 836 P 02 A [1] [2] [3] [4] [5] [6] [7]

[1] Thru-Hole Bandpass Filter [2] Resonator Size – 6 = 6 mm [3] Number of Resonator [4] Center Frequency [5] Type – S: SMD [6] Bandwidth [7] Version P: Pin

BANDPASS FILTERS: LTCC TYPE FOR ISM 2.4 GHz APPLICATION


DIMENSIONS TYPICAL PERFORMANCE

SPECIFICATIONS

Part No. Center

Frequency f0 (MHz)

Bandwidth (MHz)

Insertion Loss

(dB) max.


VSWR in Bandwidth

max.


min. LBP12R2450P100A 2450 f0 ± 50 3.0 0.5 1.5 18 (f0 ± 250)

_______________________________________ * Other specification available upon request ORDERING INFORMATION

LBP 1 2R 2450 P 100 A [1] [2] [3] [4] [5] [6] [7]

[1] LTCC Bandpass Filter [2] Resonator Size: 1=1 mm [3] Number of Resonator [4] Center Frequency [5] Type – S: SMD [6] Bandwidth [7] Version P: Pin

MONOLITHIC BLOCK DUPLEXERS

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080

APPLICATIONS

• AMPS • CDMA • Cellular • GSM

SPECIFICATIONS

Part No Center

Frequency (MHz)

Band Width (MHz)

InsertionLoss

(dB) maxTx 836.5 FT ± 12.5 2.5 MDPX48R836/881S25A Rx 881.5 FR ± 12.5 3.5 Tx 836.5 FT ± 12.5 2.5

AMPS/

CDMA MDPX48R836/881S25B Rx 881.5 FR ± 12.5 3.5 Tx 1747 FT ± 37.5 3.5 GSM/

DCS MDPX512R1747/1842S75A Rx 1842 FR ± 37.5 4.0 Tx 1765 FT ± 15.0 3.0 MDPX27R1765/1855S30A Rx 1855 FR ± 15.0 4.0 Tx 1880 FT ± 30.0 3.5 MDPX48R1880/1960S60A Rx 1960 FR ± 30.0 4.3 Tx 1880 FT ± 30.0 3.0

PCS

MDPX48R1880/1960S60B Rx 1960 FR ± 30.0 3.5 Tx 1950 FT ± 30.0 2.5 IMT-

2000 MDPX37R1950/2140S60A Rx 2140 FR ± 30.0 3.0 Tx 2315 FT ± 15.0 2.5 WLL MDPX49R2315/2385S30A Rx 2385 FR ± 15.0 3.0 Tx 3420 FT ± 20.0 3.0 MDPX48R3420/3520S40A Rx 3520 FR ± 20.0 3.0 Tx 3420 FT ± 10.5 3.0 MDPX46R3420/3530S21A Rx 3530 FR ± 10.5 3.0 Tx 3415 FT ± 15.0 3.0 MDPX48R3415/3515S30A Rx 3515 FR ± 15.0 3.0 Tx 3425 FT ± 25.0 3.0 MDPX48R3425/3525S50A Rx 3525 FR ± 25.0 3.0 Tx 3431 FT ± 21.0 2.5 MDPX48R3431/3534S42A Rx 3534 FR ± 21.0 3.0 Tx 3450 FT ± 20.0 3.0 MDPX48R3450/3550S40A Rx 3550 FR ± 20.0 3.0 Tx 3475 FT ± 25.0 3.0 MDPX48R3475/3575S50A Rx 3575 FR ± 25.0 3.0 Tx 3612 FT ± 13.5 3.0 MDPX48R3612/3662S27A Rx 3662 FR ± 13.5 3.0 Tx 3420 FT ± 20.0 3.0

MMDS

MDPX59R3420/3520S40A Rx 3520 FR ± 20.0 3.0


••• •

ORDERING INFORMATION

MDPX 4 8R 836/881 S [1] [2] [3] [4] [5

[1] MCV Duplexer [2] Resonator Size [4] Center Frequency (Tx/Rx) [5] Type – S: SMD [7] Version P: Pin

IMT-2000 MMDS PCS/DCS WLL

Fax: (858) 755-6037 www.mcvtech.com 301-1

. Ripple

(dB) max. VSWR max.

Attenuation (dB) min.

1.0 2.0 40 @ Rx 1.0 2.0 50 @ Tx 1.5 2.0 40 @ Rx 2.0 1.2 60 @ Tx 2.0 2.0 45 @ Rx 2.0 2.0 45 @ Tx 1.0 2.0 40 @ Rx 1.0 2.0 50 @ Tx 2.5 2.0 40 @ Rx 3.0 2.0 58 @ Tx 2.0 2.0 30 @ Rx 2.5 2.0 35 @ Tx 1.0 2.0 40 @ Rx 1.0 2.0 50 @ Tx 1.0 2.0 40 @ Rx 1.0 2.0 50 @ Tx 1.5 2.0 55 @ Rx 1.5 2.0 55 @ Tx 1.0 2.0 30 @ Rx 1.0 2.0 30 @ Tx 1.0 2.0 45 @ Rx 1.0 2.0 45 @ Tx 1.5 2.0 40 @ Rx 1.5 2.0 40 @ Tx 1.0 2.0 30 @ Rx 1.0 2.0 40 @ Tx 1.5 2.0 55 @ Rx 1.5 2.0 55 @ Tx 1.5 2.0 45 @ Rx 1.5 2.0 45 @ Tx 1.5 2.0 30 @ Rx 1.5 2.0 30 @ Tx 1.5 2.0 55 @ Rx 1.5 2.0 55 @ Tx

25 B ] [6] [7]


RF DUPLEXERS (SMD TYPE)


DIMENSIONS SPECIFICATIONS

Part No Center

Frequency (MHz)

Band Width (MHz)

InseLo

(dB)Tx 836.5 FT ± 12.5 2DPX37R836/881S25B Rx 881.5 FR ± 12.5 3Tx 838.5 FT ± 11.1 2

AMPS/

CDMA DPX67R838/883S22A Rx 883.5 FR ± 11.1 2Tx 902.5 FT ± 12.5 2DPX36R902/947S25A Rx 947.5 FR ± 12.5 3Tx 902.5 FT ± 12.5 2GSM

DPX67R902/947S25A Rx 947.5 FR ± 12.5 2Tx 1765 FT ± 15.0 2DPX36R1765/1855S30A Rx 1855 FR ± 15.0 3Tx 1765 FT ± 15.0 1DPX36R1765/1855S30D Rx 1855 FR ± 15.0 2Tx 1765 FT ± 15.0 2

PCS

DPX47R1765/1855S30A Rx 1855 FR ± 15.0 2Tx 1950 FT ± 30.0 2DPX36R1950/2140S60A Rx 2140 FR ± 30.0 2Tx 1950 FT ± 30.0 2

IMT-2000 DPX47R1950/2140S60A

Rx 2140 FR ± 30.0 2Tx 416.75 FT ± 1.75 2DPX127R417/427S03A Rx 426.75 FR ± 1.75 2Tx 741 FT ± 6.0 2DPX67R741/785S12A Rx 785 FR ± 6.0 2Tx 2315 FT ± 15.0 2DPX37R2315/2385S30A Rx 2385 FR ± 15.0 3Tx 2315 FT ± 15.0 1

WLL

DPX67R2315/2385S30A Rx 2385 FR ± 15.0 2_______________________________________ * Other specification available upon request ORDERING INFORMATION

DPX 3 7R 836/881 S [1] [2] [3] [4] [5]

[1] RF Duplexer [2] Resonator Size [4] Center Frequency (Tx/Rx) [5] Type – S: SMD [7] Version P: Pin

APPLICATIONS • AMPS/CDMA • GSM • IMT-2000 • PCS/DCS • WLL

Fax: (858) 755-6037 www.mcvtech.com 302

rtion ss

max. VSWR max.


.6 1.7 40 @ (FR ± 12.5)

.7 1.8 50 @ (FT ± 12.5)

.0 1.5 40 @ (FR ± 11.1)

.5 1.5 50 @ (FT ± 11.1)

.4 1.7 32 @ (FR ± 12.5)

.2 1.8 30 @ (FT ± 12.5)

.4 1.8 40 @ (FR ± 12.5)

.9 2.0 45 @ (FT ± 12.5)

.0 1.7 45 @ (FR ± 15.0)

.0 2.0 50 @ (FT ± 15.0)

.9 1.7 42 @ (FR ± 15.0)

.0 2.0 50 @ (FT ± 15.0)

.8 1.5 40 @ (FR ± 15.0)

.8 1.5 40 @ (FT ± 15.0)

.5 1.8 50 @ (FR ± 15.0)

.5 1.8 42 @ (FT ± 15.0)

.2 1.8 42 @ (FR ± 15.0)

.4 2.0 50 @ (FT ± 15.0)

.8 1.5 40 @ (FR ± 1.75)

.8 1.5 40 @ (FT ± 1.75)

.0 1.8 45 @ (FR ± 6.0)

.5 1.8 50 @ (FT ± 6.0)

.4 1.8 40 @ (FR ± 15.0)

.4 1.8 50 @ (FT ± 15.0)

.9 1.8 42 @ (FR ± 15.0)

.5 1.8 50 @ (FT ± 15.0)

25 B [6] [7]


TEM MODE RESONATORS

11696 Sorrento Valley Road, Sui

FEATURES

• Size available from 2 mm to 12 mm • High dielectric constant • Low temperature coefficient • High quality factor • Wide range of resonant frequency

APPLICATIONS

• Oscillator (DRO/VCO) • Wireless handset • Filter and Duplexer (CDMA/PCS/WLL/IMT2000)

DIMENSIONS

DIMENSION TYPES

Type W

D120 12.0

D100 10.0D 80 8.0

D 60 6.0

D 40 4.0

D 30 3.0D 20 2.1

ORDERING INFORMA

M

[1] MCV Resonator [4] Characteristic Impe

(Specify dielectric

W

A

T

L

CBW

L: Frequency Factor

te J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 401-1

A B C T 4.00 ± 0.20 without tab ± 0.2 3.55 ± 0.20 2.0 2.5 1.0

± 0.2 3.30 ± 0.20 1.5 2.0 1.0 ± 0.2 2.70 ± 0.20 1.5 1.8 0.7

2.50 ± 0.10 without tab 2.20 ± 0.10 without tab ± 0.1 2.00 ± 0.10 1.2 1.8 0.5 2.00 ± 0.10 0.8 1.3 0.5 1.50 ± 0.10 0.8 1.3 0.5 ± 0.1 1.20 ± 0.10 without tab

± 0.1 0.95 ± 0.10 0.7 1.3 0.5 ± 0.1 0.65 ± 0.10 0.5 1.0 0.5

Unit: mm

TION

R 90 D120 8 4 1000 [1] [2] [3] [4] [5] [6]

[2] Material Dielectric [3] Dimension Type dance [5] Resonant Wave Length [6] Resonant Frequency material and size for resonator without tab)

TEM MODE RESONATORS


SPECIFICATIONS

Material Dielectric Constant

Temperature Coefficient (ppm/°C)

Dimension Type

Characteristic Impedance

(ohm) Resonant

Wave Length Frequency

Range (MHz)

Q value min.

15.5 D120 17.0

1000

D100 15.5 900 D 80 15.0 800

12.5 700 14.0 ~ D 60 15.5 5000

600

10.0 14.0 D 40 16.5

450

D 30 16.0 350

MR21 21 ± 1 0 ± 10

D 20 16.5

λ/4 or λ/2

250 11.5 D120 12.5 900

D100 11.5 800 D 80 11.5 700

9.5 600 10.5 ~ D 60 11.5 3500

550

7.5 10.5 D 40 12.5

420

D 30 12.0 320

MR37 37 ± 1 0 ± 10

D 20 12.5

λ/4 or λ/2

220 7.5 D120 8.0 800

D100 7.5 700 D 80 7.0 600

6.0 300 7.0 ~ D 60 7.5 2000

450

5.0 6.5 D 40 8.0

320

D 30 7.5 270

MR90 90 ± 2 0 ± 10

D 20 8.0

λ/4 or λ/2

180 _______________________________________ * Other specification available upon request

TE MODE DIELECTRIC RESONATORS


MCV Technologies dielectric resonators (DRs) provide wide range of dielectric constant, high quality factor (Q), and low cost solutions for the applications in dielectric resonator oscillators, microwave filters, combiners, base station for AMPS/GSM/PCS, and satellite communication. FEATURES

• High dielectric constant • High quality factor (Q) • High frequency stability • Low temperature coefficient of resonance

frequency • Ta free materials • Tight tolerance in dielectric constant

APPLICATIONS

• MDR20 – PCS/DECT, WLL, WLAN, DRO • MDR38 AND MDR45 – Cellular, GSM,

GPS, PCS/DECT, WLL, WLAN, MMDS, DRO

SPECIFICATION

Series MDR20 MDR3Dielectric Constant 19 ~ 21 37 ~ 3Unloaded Q , Qu 6,000 @ 10 GHz 10,000 @Temperature Coefficient of Resonant Frequency, τf (ppm/°C)

-3 ~ +3 -3 ~ +

Insulation Resistance (ohm-cm) > 1014 > 10

Thermal Expansion Coefficient (ppm/°C) 8 ~ 9 6 ~ 7

Thermal Conductivity (cal/cm-sec-°C) x 103 5 5

Density (g/cm3) 3.8 5.0__

* O SUPPORT MATERIAL

1. Material: Alumina 2. Feature:

• High Q Value • Excellent thermal conductivity • Excellent long term reliability

3. Unloaded Q (Qu) value with MCV alumina support material:

UHF

0.3 0.8

Frequency (GHz)

FREQUENCY (GHz)

8 MDR45 9 44 ~ 46

4 GHz 10,000 @ 4 GHz

3 -6 ~ +6

13 > 1014

9 ~ 10

5

4.7 ________________________________ ther specification available upon request

MDR45 SERIES

MDR38 SERIES

MDR20 SERIES

L-BAND S-BAND C-BAND X-BAND Ku-BAND K-BAND Ka-BAND

1.0 2.0 4.0 8.0 12 18 26.5 40

Characteristic Standard Alumina Support

MCV Alumina Support

Dielectric Constant 9.8 9.8 Tan δ 3.0 x 10-4 1.0 x 10-4

Density (g/cm3) 3.75 3.90 Measuring 10 10

Fax: (858) 755-6037 www.mcvtech.com 402-1

TE MODE DIELECTRIC RESONATORS

11696 Sorrento Valley Road, Suite

Dimension & Frequency Range Series Frequ

MDR20

MDR38

MDR45

ORDERING INFORMAT

MDR [

[1] Material Series [2] Temperature Coeffic

• 00: Special reque• 01: +6 ppm/°C • 02: +3 ppm/°C • 03: 0 ppm/°C • 04: -3 ppm/°C • 05: -6 ppm/°C

[3] Tolerance of Temper• P = ±0.5 ppm/°C• S = ±1.0 ppm/°C• N = ±2.0 ppm/°C

[4] Outer Diameter (x 10[5] Inner Diameter (x 10[6] Height (x 10-1 mm): e

D

J, San Diego, CA 92121 Tel: (858) 755-6080 Fax:

ency (GHz) Diameter, D ±±±± 0.05 (m1.7 ~ 1.9 40.00 ~ 42.00 2.3 ~ 2.4 31.80 ~ 33.20 8.5 ~ 9.5 9.80

10.5 ~ 11.50 6.50 15.0 ~ 16.4 4.60 0.8 ~ 0.9 73.50 1.5 ~ 1.6 34.70 1.7 ~ 1.9 31.90 2.3 ~ 2.4 22.85 2.4 ~ 2.5 21.05 3.0 ~ 4.0 13.80 ~ 17.75 5.8 ~ 6.5 8.25 ~ 10.05 6.5 ~ 7.5 7.50 ~ 8.27 8.5 ~ 9.4 6.50 ~ 7.51

11.0 ~ 12.0 5.20 0.8 ~ 0.9 56.19 ~ 60.51 1.8 ~ 2.0 28.10

10.6 5.00 _______________• d: custom spe• Other specific

ION

38 03 N 108 401] [2] [3] [4] [5

ient of Resonant Frequency st

ature Coefficient -1 mm): e.g. 108 = 10.8 mm

-1 mm): e.g. 40 = 4.0 mm; 00 for disc type .g. 50 = 5.0 mm

D

L

(858) 755-6037

m) Heigh

___________cs. ation available

50 ] [6]

L

d

www.mcvtech.com 402-2

t, L ±±±± 0.05 (mm) 12.50 ~ 13.50 11.50 ~ 12.50

4.20 2.65 1.96 28.45 15.35 14.10 10.10 9.70

6.20 ~ 7.90 3.75 ~ 4.48 2.55 ~ 3.74 2.35 ~ 2.60

2.25 24.42 ~ 28.25

13.45 1.80

_________________

upon request

TEST METHOD OF ELECTRICAL PROPERTIES

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel:

1. DIELECTRIC CONSTANT (εεεεr)

The dielectric constant of the material determines the resonator dimension. The typical measurement method uses Hakki–Coleman test fixture as shown in Figure 1.

Figure 1. Hakki-Coleman Test Fixture

2. Q FACTOR Figure 2 shows a typical test cavity setup focoefficient of resonant frequency. The cavity dimensionmetallic loss can be neglected. Low loss support, sucthe DR specimen in the middle of the cavity away from uses two RF probes connected to a network analyzerDR. By measuring 3 dB bandwidth (BW), insertion losscan be determined from the equation:

Qu = (f0 / BW) / (

The resonance is measured in the TE01δ mode and the t 3. TEMPERATURE COEFFICIENT OF RESONANT For τf measurement, the test cavity in Figure 2 i(f0) is measured from 25°C to 70°C. The τf is determine

τf = (∆f / f25°C) / ∆T Figure 3 shows the detailed cavity setup using mto test DR for the applications of DR oscillators and mic

Figure 3. DR cavity setup using microstrip line method

Exam

F

S

Figure 2. DR cavity setup for Q factor and temperature coefficient of resonant frequency measurement

(858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 402-3

r the measurement of Q factor and temperature should be at least three times the DR size, so the h as steatite, quartz or alumina disks, suspended the influence of the metal walls. MCV’s laboratory to couple the microwave energy to and from the (IL), and center frequency (f0), unloaded Q factor

1 –10(-IL/20))

est is performed at ambient conditions.

FREQUENCY (ττττf)

s placed in a heating chamber and the frequency d from the equation:

ppm/°C

icrostrip line method. MCV uses this test fixture rostrip filters.

ple:

requency C-band Ku-band D0 60 mm 40 mm L0 20 mm 10 mm H 0.787 mm 0.508 mm

ubstrate FR4 Teflon W 50 Ω line 50 Ω line

HIGH K SUBSTRATES

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (8

MCV Technologies high K substrates combine good electrical performance with excellent physical characteristics at a reasonable cost, with industry standard loss tangents (tan δ) of ≤0.0005 and very stable temperature coefficient of K (TCK). FEATURES

• High dielectric constant • High quality factor (Q) • Miniaturize the size of MIC • Fine surface finish • Metalized finish available

APPLICATIONS

• Microwave Integrated Circuit (MIC) • Low impedance matching networks

SPECIFICATION

Material Code CP CC CK (1 MHz) 13 21 6

Temperature Coefficient of K +10 ± 6 ppm 0 ± 4 ppm 0 ± 6

tan δ, max. 0.0002 0.0005 Electrode Loss (Ω/ ) 0.05

______________* Other specific


MDS 20 CC 020 X W [1] [2] [3] [4] [5] [6] [

[1] MCV Dielectric Substrate [2] Size: inches x 10 [3] Material Code

[4] Thickness (inches x 104) [5] Surface Finish:

! X = as fired ! M = machined ! P = machined and polish

[6] Metalization: ! W = wet gold over nickel ! X = none ! Y = sputtered gold over adh! Z = custom

[7] Patterning and Dicing: ! P = per customer drawing ! Blank = none

58) 755-6037 www.mcvtech.com 403

G NL 0 70

ppm -6 ± 6 ppm

______________________ ation available upon request

P 7]

esion layer

CHIP ANTENNA: FOR BLUETOOTH APPLICATION

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037

MCV multilayer chip antenna is designed for automatic mounting and adjustment-free assembly of wireless equipment, including 2.44 GHz Bluetooth and Bluetooth like application. FEATURES

• Small size and low profile • Wide frequency range • Omnidirectional, radiational pattern

SPECIFICATIONS

Part No. MA-B2442-LW96A MA-B2442-LDimension 9.8 x 6.7 x 1.0 mm 6.0 x 4.0 x 1.Center Frequency (fc) 2442 MHz 2442 MHz Operation Frequency 2400 ~ 2484 MHz 2400 ~ 2484Bandwidth in S11≤≤≤≤-10dB 200 MHz min. 200 MHz minReturn Loss at fc 20 dB min. 16 dB min. Peak Gain 1 dBd -2.5 dBd Average Gain -2.8 dBd -7 dBd

_______________________________________ * Other specification available upon request PERFORMANCE

ORDERING INFORMATION MA BC 2442 LW46 A [1] [2] [3] [4] [5] [1] MCV Antenna [2] Bluetooth Chip [3] Center Frequency [4] Dimension: Length and Wid [5] Version

DIMENSIONS

www.mcvtech.com 501-1

W64B 0 mm

MHz .

th (mm)

(unit: mm)

CHIP ANTENNA: FOR BLUETOOTH APPLICATION

11696 Sorrento Valley Road, Suite J

TEST BOARD RECOMMENDED LAND

50Ω Lne

25

Antenna

20

35

co r

Suun

Antenna

Suun

RADIATION PATTERN

-40

-30

-20

-10

00

30

60

90

120

150180

210

240

270

300

330

-40

-30

-20

-10

0

[dB

]

[dB

]

[deg.] Chip Antenna

Ref. Dipole

-40

-30

-20

-10

00

30

60

90270

300

330

-40B]

[dB

]

[deg.] Chip Antenna

Ref. Dipole

0¡Æ90¡Æ

180¡Æ270¡Æ

0¡Æ90¡Æ

180¡Æ270¡Æ

H-Plane: Longitude

0 ¡ Æ

90 ¡ Æ

180 ¡ Æ

0 ¡ Æ

90 ¡ Æ

180 ¡ Æ

SMA nnecto

bstrate : FR4 it : mm

i

120

150180

210

240

-30

-20

-10

0

[d

-30

-20

-10

00

30

60300

330

B]

[dB

][deg.] Chip Antenna

Ref. Dipole

270 ¡ Æ270 ¡ Æ

E-Plane: Longitude

180 ¡Æ

90 ¡Æ

180 ¡Æ

90 ¡Æ

Fixing

, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 501-2

Feeding

bstrate : FR4 t : mm

-40 90

120

150180

210

240

270-40

-30

-20

-10

0

[d

-40

-30

-20

-10

00

30

60

90

120

150180

210

240

270

300

330

-40

-30

-20

-10

0

[dB

]

[dB

]

[deg.] Chip Antenna

Ref. Dipole

270 ¡Æ

0¡Æ

270 ¡Æ

0¡Æ

H-Plane: Horizon

90 ¡Æ

180 ¡Æ

0 ¡Æ

270 ¡Æ

90 ¡Æ

180 ¡Æ

0 ¡Æ

270 ¡Æ

E-Plane; Horizon

SSA SERIES PATCH ANTENNAS: FOR GPS APPLICATION

MCV SSA Series miniature antenna element is designed for Global Positioning Systems (GPS). This patch antenna has excellent stability and sensitivity through the use of high performance proprietary ceramic material well suited for GPS frequencies.

¡¾0.2

¡¾0.2

13

1.2

1.2 3.5

0.7

FEATURES • Antenna dimension is as small as teflon

antenna • Provide highly stabilized performance • Using high quality factor dielectric • Low and tight temperature coefficient • Different sizes are available: 13, 18, 20, 25,

36, and 60 mm.

¡¾0.2

[BOTTOM] [SIDE] [TOP]

Tolerance UnlessOtherwise Specified : ¡¾0.1

0.8

1 m ax.313

ELEMENT CONSTRUCTION • Type: Flat patch antenna • Design: Rectangular microstrip antenna• Feeding Method: Off-set one point

feeding through ground plane

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel:

SPECIFICATIONS Part No.

Center Frequency

(MHz) Bandwidth (10dB) min.

MA-SP1570L25-Y22 1570 8 MA-SP1575L25-Y22 1575 8 MA-SP1575L36 1575 30 MA-SP1575L60 1575 30 MA-SP1580L25-Y22 1580 8 MA-SP1580L25-Y26 1580 15 MA-ST1580L13 1580 5 MA-ST1580L18 1580 10 MA-ST1580L20 1580 12 MA-ST1580L25 1580 15

TYPICAL PERFORMANCE

DIMENSIONS

(858) 75

R

5-6080 Fax: (858) 755-6037 www.mcvtech.com 502-1

eturn Loss (dB) min.

Gain (dBi)

Ground Plane (mm)

14 2.5 35 x 35 14 2.5 35 x 35 15 80 X 80 15 80 X 80 14 2.5 35 x 35 15 4.5 70 x 70 15 0.0 30 X 30 15 3.0 50 X 50 15 3.5 50 X 50 15 5.0 70 X 70

Unit : m m

SSA SERIES PATCH ANTENNAS: FOR GPS APPLICATION


DIRECTIVITY CHART

THETA = 0 THETA = 90

ANTENNA GAIN vs. GROUND PLANE SIZE

0

5

10

40 50 60 70 80 90

SIZE OF SQUARE GROUND PLANE (mm)

GAI

N (d

Bi)

FREQUENCY SHIFT OF DIELECTRIC ANTENNA BY GROUND PLANE SIZE

1.57

1.58

1.59

40 50 60 70 80 90 100

SIZE OF SQUARE GROUND PLANE (mm)

CEN

TER

FR

EQ.

(GHz)

AXIAL RATIO

0510

1.57 1.575 1.58 1.585 1.59

with 70mm sq. GND FREQUENCY (GHz)

AXIA

L R

ATIO

(d

B)


MA ST 1580 L25 Y22 [1] [2] [3] [4] [5]

[1] MCV Antenna [3] Center Frequency [2] ST: Standard Pin [4] Dimension – Length (mm)

SP: Special Pin [5] Feeding Location

SSB SERIES PATCH ANTENNA: FOR WIRELESS LAN

S

O

MCV SSB Series is an ultra miniature dielectric patch antenna for 2.4 GHz Wireless LAN system. This antenna has vertical polarization characteristics, suitable for base station applications. MCV's ceramic dielectric material provides excellent stability and sensitivity. A new chip antenna will be available soon for PDA, module, and terminal applications.

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (85

PECIFICATIONS

Part No. Center Frequency Bandwidth Return Loss @ fc Impedance Peak Gain Average Gain

RDERING INFORMATION

MA ST 24 [1] [2] [

[1] MCV Antenna [2] Pin Type – ST: Standard

SP: Special Pin [3] Center Frequency [4] Dimension – Diameter (mm)

FEATURES • Small size and light weight • Wide bandwidth and low loss • Central feeding point terminal• Omni-directional in azimuth

TYPICAL PERFORMANCE
DIMENSIONS
8) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 503-1

MA-ST2450D16 2450 MHz 50 MHz min. 20 dB min. 50 ohm -1.0 dBd typical -7.0 dBd typical


50 D16 3] [4]

SSB SERIES PATCH ANTENNA: FOR WIRELESS LAN


MOUNTED WITH GROUND PLANE TEST BOARD

RADIATION PATTERN

CAVITY FILTERS


FEATURES

• Temperature compensated • Low insertion loss • Available on bandpass, duplexer, multiplexer, and

notch filters APPLICATIONS

• AMPS/CDMA • Cellular phone • GSM • IMT-2000 • PCS • Trunked Radio System (TRS) • WLL


CBP 8MR 881 N 25 A [1] [2] [3] [4] [5] [6]

[1] Filter Type:

• CBP: Cavity Bandpass Filter • CDPX: Cavity Duplexer • CMPX: Cavity Multiplexer • CNF: Cavity Notch Filter

[2] Number of Resonator: • M: Metal • C: Ceramic

[3] Center Frequency • CBP: Center Frequency • CDPX: Center Frequency of Low Band / Center Frequency of High Band • CNF: Center Frequency

[4] Connector Type: • S: SMA • N: N Type • D: DIN Type • B: BNC

[5] Bandwidth [6] Version

80 Fax: (858) 755-6037 www.mcvtech.com 600

CAVITY BANDPASS FILTERS TYPICAL PERFORMANCE S

*

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (85

PECIFICATIONS

Part No Frequency

Range (MHz)

Insertion Loss

(dB) max.

CBP10MR836.5S25A 824 ~ 849 1.5

CBP16CR836.5S27.4A 822.8 ~ 850.2 1.2 AMPS

/ CDMA

CBP8MR881.5N25A 869 ~ 894 0.6

CBP4MR1845N10A 1840 ~ 1850 1.0 PCS

CBP4CR1865S04A 1863.05~1866.95 1.0

CBP8MR1930S20A 1920 ~ 1940 0.8 IMT-2000 CBP8MR2120S20A 2110 ~ 2130 0.8

WLL CBP6CR2325N10A 2390 ~ 2400 1.0

___________________________________ Other specification available upon request

8) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 601

Ripple (dB) min.

Return Loss (dB) min.


Size (mm)

0.2 20

20 @ 821 MHz 30 @ 851 MHz 80 @ 869 ~ 894 MHz

230X95X62

0.5 18 40 @ fc ± 32.5 69X57X43

0.2 20

20 @ 866 MHz 25 @ 896 MHz 80 @ 824 ~ 849 MHz

330X194X79

0.2 20 75 @ 1750 MHz 89X39X50

0.5 18 20 @ fc ± 3.5 220X59X49

0.2 20 100 @ 2110 MHz 121X76X32

0.2 20 100 @ 1920 MHz 121X76X32

0.4 20 10 @ fc ± 6 30 @ fc ± 9 70 @ fc ± 25

153X104X44

CAVITY DUPLEXERS


TYPICAL PERFORMANCE SPECIFICATIONS

Part No Frequency

Range (MHz)

Insertion Loss

(dB) max.

Ripple (dB) min.



Size (mm)

824 ~ 835 1.2 0.6 20

55dBC @ 810MHz 20dBC @ 821MHz 25dBC @ 838MHz 105dBC @ 869 ~ 880 MHz

CDPX14MR829/874N11A

869 ~ 880 0.6 0.3 20

90dBC @ 824 ~ 835 MHz 12dBC @ 865MHz 25dBC @ 896MHz 20dBC @ >896 MHz 80dBC @ 1.6 ~ 1.8 GHz

418X158X94

824 ~ 849 1.0 0.5 15 70 @ Rx CDPX12MR836.5/881.5S25A 869 ~ 894 1.0 0.5 15 70 @ Tx 151X77X53

835 ~ 845 1.5 0.5 20 90 @ Rx

AMPS/

CDMA

CDPX12MR840/885S10A 880 ~ 890 1.5 0.5 20 90 @ Tx 250X139X55

895 ~ 910 1.0 0.5 20 63 @ Rx GSM CDPX8MR902/947N15A 940 ~ 955 1.0 0.5 20 63 @ Tx 64X78X61

1750~1760 1.2 0.3 20 80 @ Rx CDPX8MR1755/1845S10A 1840~1850 1.2 0.3 20 80 @ Tx 57X49X46

1750~1770 1.2 0.5 20 70 @ Rx CDPX8MR1760/1850BN20A 1840~1860 1.2 0.5 20 70 @ Tx 57X43X43

1750~1780 1.0 0.3 20 65 @ Rx CDPX8MR1765/1855BN30A 1840~1870 1.0 0.3 20 65 @ Tx 57X43X43

1770.625 ~ 1779.375 1.2 0.5 20 110 @ Rx

CDPX10CR1775/1865S09A 1860.625 ~ 1869.375 1.2 0.5 20 110 @ Tx

262X51X81

1850~1910 1.5 0.5 20 80 @ Rx

PCS

CDPX14MR1880/1960S60A 1930~1990 1.5 0.5 20 80 @ Tx 105.5X105.5X

30 1920 ~1940 0.8 0.5 20 100 @ Rx IMT-

2000 CDPX12MR1930/2120N20A 2110~2130 0.8 0.5 20 100 @ Tx 205X75X36

2310~2320 1.0 0.5 20 110 @ Rx WLL CDPX12MR2315/2385S10A 2380~2390 1.0 0.5 20 110 @ Tx 251X105X45

___________________________________ *Other specification available upon request

CAVITY MULTIPLEXERS TYPICAL PERFORMANCE

D S

*

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858)

IMENSIONS Outside Ins

PECIFICATIONS

Part No Frequen

cy Range (MHz)

Insertion Loss

(dB) max.

1750.625 ~

1759.375 3.0

1761.875 ~

1768.125 3.0 PCS CMPX17MR1755/1765/1775NA

1770.625 ~

1779.375 3.0

Other specification available upon request

ide

755-6080 Fax: (858) 755-6037 www.mcvtech.com 603

Ripple (dB) min.



Size (mm)

1.0 15

22 dBc @ 1761.875 ~ 1779.375 110 dBc @ 1840 ~ 1850

1.0 15

22 dBc @ 1750.625 ~ 1759.375 22 dBc @ 1770.625 ~ 1779.375 110 dBc @ 1851 ~ 1859

1.0 15

22 dBc @ 1750.625 ~ 1768.125 110 dBc @ 1860 ~ 1870

245X130X50

CAVITY NOTCH FILTERS

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 75

TYPICAL PERFORMANCE DIMENSIONS SPECIFICATIONS

Part No Pass Band (MHz)

Insertion Loss

(dB) max. 869 ~ 894 CNF5MR899N06A 922 ~ 944 2.0

1750 ~ 1800 CNF5MR1825S50A 1850 ~ 1900 2.0

___________________________________ *Other specification available upon request

5-6080 Fax: (858) 755-6037 www.mcvtech.com 604

Ripple (dB) min.

VSWR max.

50 dB min. Rejection

(MHz)

2.0 1.5 896 ~ 902

2.0 1.4 1800 ~ 1850

5 MHz ~ 1 GHz SPLITTERS FOR CABLE AND MODEM


FEATURES

• 100% soldering of the cover provides the highest RF integrity (RFI) shielding

• Corrosion resistant finish • Easy access of cable connections • High quality zinc diecast case • Anticorrosive chromate finish • Mounting tabs and grounding block

SPECIFICATIONS

Types Frequency Range (MHz)

Insertion Loss (dB)

Return Loss (dB)

Isolation Loss (dB)

5-15 3.5 22 30 15-40 3.5 22 40

40-400 3.5 22 32 400-500 3.5 20 25 500-600 3.7 20 25

MS-21GNH

600-1000 4.2 20 25 5-15 3.5/7.0 20 30 15-40 3.5/7.0 20 40

40-400 3.5/7.0 22 32 400-500 3.6/7.2 20 25 500-600 3.7/7.4 20 25

MS-31GNH

600-1000 4.2/8.2 20 25 5-15 7.0 20 30 15-40 7.0 20 40

40-400 7.2 22 32 400-500 7.2 20 25 500-600 7.4 20 25

MS-41GNH

600-1000 8.2 20 25 ____________________________________ * Other specification available upon request ORDERING INFORMATION MS 2 1GN H [1] [2] [3] [4] [1] MCV Splitter [2] 2 means 2-way 3 means 3-way 4 means 4-way

[3] Series type [4] H means horizontal input/output V means vertical input/output



TYPICAL PERFORMANCE 2 WAY SPLITTER 3 WAY SPLITTER



4 WAY SPLITTER

GaAs FET BIAS & PROTECTION DC POWER BOARD

11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 FAax: (858) 755-6037 www.mcvtech.com 801

DESCRIPTION MCV DC Power Board provides both positive and negative supply voltages for Power GaAs FET biasing. From a single positive supply, we generate, regulate, and sequence the power on for your FET circuitry. FEATURES

1. The GFP100 provides gate and drain voltages in the correct sequence and levels to insure proper power management for your GaAs FET applications. • High current positive regulator for the drain power source • Negative gate voltage power source

2. Proper power supply sequencing occurs when primary DC power is applied. • The negative gate voltage ramps ON before the drain voltage is applied to the FET. • The gate and drain voltages are protected against abrupt power supply changes. • The ENABLE pin accepts a TTL input for switching the GaAs FET on and off as desired.

3. Compact and economical design reduces power dissipation of the GFP100 power management package by a FACTOR OF FIVE providing: • More power for your system • Reduced operating temperatures • Extended component life and reliability

SPECIFICATIONS FOR GFP100

Type Unit Value Input Voltage (Vin) V 10.5~16 Input Momentary Over Voltage V 30 Inverse Input Voltage V -16 Drain Output Voltage (Vo) V 10

GFP100 A 10 Max. Pos. Output Current GFP100A A 18 Max. Power Loss W 13 Neg. Output Voltage V -5 Max. Neg. Output Current mA 75 Max. Pos. Output Ripple MVP-P 25 Max. Neg. Output Ripple MVP-P 10 Max. Turn On Time µs 10 Max. Turn Off Time µs 5 Max. Operating Temperature °C -30~+70 Max. Storage Temperature °C -40~+85

_______________________________ * Please contact us for detailed information and alternative requirements suitable for your application

BLOCK DIAGRAM

TTL IN

V IN

GND

+V OUT

-V OUT

-Vadj OUT

GND

4.7 kΩ

Company Profile Facility - MCV Technologies, Inc.-Microwave

Documents

Transcript of Company Profile Facility - MCV Technologies, Inc.-Microwave