Cooling detectors in particle physics Gavin Leithall CCLRC Rutherford Appleton Laboratory.
CMOS Monolithic Active Pixel Sensors (MAPS) · CMOS Sensor Design Group CCLRC - Technology...
Transcript of CMOS Monolithic Active Pixel Sensors (MAPS) · CMOS Sensor Design Group CCLRC - Technology...
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Dr Renato Turchetta
CMOS Sensor Design Group
CCLRC - Technology
International Symposium on the Development of Detectors for Particle, Astro-Particle and Synchrotron Radiation Experiments, SLAC, USA, 3-6 April 2006
CMOS Monolithic Active Pixel Sensors
(MAPS)for future vertex detectors
… but not just
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2SNIC 2006
OutlineIntroduction. MAPS for charged particle detectionResults so far
3T-pixelPipeline pixelsDigital sensors/pixels
MAPS in an experimentSTARBelleILC: vertex
Conclusionand calorimetry
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3SNIC 2006
CMOS Monolithic Active Pixel Sensor (MAPS)
Standard CMOS technologyall-in-one detector-connection-
readout = Monolithicsmall size / greater integrationlow power consumptionradiation resistancesystem-level costIncreased functionalityincreased speed (column- or
pixel- parallel processing)random access (Region-of-Interest
ROI readout)
Column-parallel ADCs
Data processing / Output stage
Rea
dout
con
trol
I2C
co
ntro
l
(Re)-invented at the beginning of ’90s: JPL, IMEC, …
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4SNIC 2006
CMOS sensors in digital cameras
Consumer/prosumerDigital cameras
Digital intraoral imaging
Digital mammography
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5SNIC 2006
Metal layers
Polysilicon
P-Well N-Well P-Well
N+ N+ P+ N+
MAPS for
charged particle
detection
Dielectric for insulation and passivation
Charged particles
100% efficiency; when NMOS design only
Radiation
--
--
--
- ++
+++
++
- +- +- +
P-substrate (~100s µm thick)
P-epitaxial layer(up to to 20 µm thick)
Potential barriers
epi
sub
NNln
qkTV=
R. Turchetta et al., NIM A 458 (2001) 677-689)
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6SNIC 2006
3T pixelBaseline (minimum) design.
Low noise detection of MIPs first demonstrated in 2001.
Since then, with a number of technologies/epi thickness:
AMS 0.6/14, 0.35/∞, 0.35/14, 0.35/20, AMIS (former MIETEC) 0.35/4, IBM
0.25/2, TSMC 0.35/10, 0.25/8, 0.25/∞, UMC 0.18/∞
Noise <~ 10 e- rms
Spatial resolution 1.5 µm
@ 20 µm pitch, with full analogue
readout
Good radiation hardness
Low power
Speed: rolling shutter
can be a limit
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7SNIC 2006
Radiation hardnessTransistors.Threshold shift: reduces with shrinking feature size
Bird’s beak effect: use enclosed geometry transistors
Transistor leakage current: use guard-rings to separate transistors
Diodes.Radiation damage increases leakage currentRadiation damage reduces minority carrier lifetime
diffusion distance is reduced
-V
fb/ M
rad
(Si)
11E-3
1E-2
1E-1
1E0
1E1
1E2
1E3
10010
With
out t
unne
l effe
ct
With
tunn
el e
ffect
Oxide thickness (nm)
~tox2
0.25 micron
1015No rad 1014
No rad
15-µm pixel with 1 diode 15-µm pixel with 4 diodes
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8SNIC 2006
Radiation test. Source results
• Test with parametric test
sensor RAL_HEPAPS2.
Designed in TSMC 0.25/8, in-
pixel transistors with 0.35-
equivalent oxide thickness
• Several types of pixels
• Noise seems to increase
slightly with dose.
• Signal decreases with dose.
• Leakage current increase only
noticeable beyond 1014 p/cm2
Noi
se (A
DU
cou
nts)
Noi
se (A
DU
cou
nts)
Sign
al (A
DU
cou
nts)
Sign
al (A
DU
cou
nts)
Dose (log10(p/cm2)) Dose (log10(p/cm2))
Dose (log10(p/cm2)) Dose (log10(p/cm2))
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9SNIC 2006
Pipeline pixelsFlexible Active Pixel Sensor (FAPS, RAL): TSMC 0.25/8, 10 memory cell per pixel; 28 transistors per pixel; 3 sub-arrays of 40x40 pixels @ 20 µm pitch, sampling rate up to 10 MHz. Noise ~ 40 e- rms, single-ended readout
Continuous Acquisition Pixel (CAP, Hawaii): three versions (CAP1/2/3) in TSMC 0.35/8 and 0.25/8, 5 pairs cell/pixel in CAP3 40-50 e- rms single ended 20-25 differential
MIMOSA12 (Strasbourg) in AMS 0.35/14: 4 pairs/pixel
cluster size vs SNR
0
5
10
15
20
1 2 3 4 5 6 7 8 9
# pixels in cluster
SNR
det1
det2
det3
det4
CAP1
FAPS
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10SNIC 2006
- TSMC 0.25 µm fab. process with ~ 8 µm epitaxial layer- Pixel pitch: 25 µm- 3 sub matrices with 3 diode size: 1.2 x 1.2 µm2, 1.7 x 1.7 µm2, 2.4 x 2.4 µm2
- 24 // columns of 128 pixels with 1 discriminator per column- 8 analog outputs
• Mimosa 8 (Saclay)
• Test in lab: 55Fe results
– Pixel noise ~ 15 e-
– CDS ending each column
Pixel-to-pixel dispersion ~ 8 e-
• Test beam results (DESY, 5GeV e-)
• S/N (MPV) ~ 8.5 - 9.5
• Efficiency > 98%
Digital readout• Several imagers designed by RAL with column-parallel ADC:
single-slope (10-bit) and successive approximation (up to 14-bit)
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11SNIC 2006
Column comparator
Temp. = 20oC; r.o. = 40 MHz
S/N(seed) cut > 5.5 ( discri. threshold =5 mV)Contamination ~< 5 x 10-5
Fake Hit rate / pixel / event
Average hit multiplicity (num of pixels in cluster)
Efficiency (%)
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12SNIC 2006
In-pixel digitisation• OPIC (On-Pixel Intelligent CMOS Sensor).
Designed by RAL within UK MI3 consortium
• In-pixel ADC (single-slope 8-bit)
• In-pixel TDC
• Data sparsification
Test structure. 3 arrays of 64x72 pixels @ 30 µm pitchFabricated in TSMC 0.25/8PMOS in pixel sub-100% efficiencyStarting point for R&D on ILC-ECAL Calice
Image obtained with the sensor working in TDC mode with sparse data scan. White pixels are those which didn’t cross threshold
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13SNIC 2006
MAPS for STARMimoSTAR-2 (France)
– AMS 0.35 µm OPTO. 30 µm pitch – 2 matrices 64 x 128, JTAG architecture– Rad. hard structure (based on Mimosa 11)
To be installed in STAR (2006)Ionising radiation tolerant pixel validated at temperature up to + 40 oCNo active cooling needed at int. time ~< O(1 ms)
MimoSTAR-3L in design in AMS 0.35: 200 kpixels, tr.o. = 2 ms, 2 cm2
Test-beam results (DESY, 5 GeV e-)
2 r.o. time (2 and 10 MHz)
800 µs and 4 ms
Efficiency vs Temp S/N (MPV) vs Temp
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14SNIC 2006
MAPS for Belle
e- e+
# of Detector / layer ~ 32
End view
128 x 928 pixels, 22.5µm2
~120 Kpixels / CAP3
0.25 µm process
5 pipeline cell pairs per pixel
CAP4 also in design
CAP3
5-layer flexPIXRO1 chip
Pixel Readout Board (PROBE)
Side view
Half ladder scheme
Double layer, offset structure
r~8mm
Length: 2x21mm ~ 4cm
17o30o
r~8mm
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15SNIC 2006
MAPS for ILCVertex: R&D in France (MIMOSA family) and UK (RAL_HEPAPS family)
MIMOSA family: latest is n. 15. Several prototypes with different technologies and pixel architectures: 3T, column-parallel comparator, pipeline pixel. Good S/N, radiation hardness, spatial resolution, detection efficiency, … demonstrated
RAL_HEPAPS family: latest is n.4. First demonstrator (FAPS) of pipeline architecture. Fast, column-parallel ADC demonstrated within LCFI- CPCCD
RAL_HEPAPS 4: large format. 3 versions, each with 1026x384 pixels (0.4M pixel), 15 µm pitch, 3T pixel. D1: single diode, enclosed geometry transistors. D2: double-diode.D4: four-diodeENC <~ 15 e- rms (reset-less)5 MHz line rateRad-hard: > Mrad
ECAL (Calice): R&D just starting in the UK forlarge area, digital MAPS
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16SNIC 2006
Large area sensorsReticle. Size limited to ~ 2 cm. Reticle is stepped-and repeated gaps between reticles
CCD foundry. Sometimes large chips are required different programming of stepping to have no gap ⇔ ‘stitching’
CMOS sensor market
Driven by design of CMOS sensors as replacement of 35 mm film. At a few foundries, it is now possible to design stitched (seamless) sensors ‘wafer-scale’Foundry choice rapidly widening
Stitched sensors likely to be needed for ILC: Vertex and ECAL (Calice)
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17SNIC 2006
Conclusions
CMOS MAPS first proposed as detectors for particle physics in 1999
100% efficiency detection demonstrated in 2000
Since then, good performance in terms of S/N, detection efficiency, radiation
hardness, spatial resolution demonstrated with 3T
New sensors architecture developed: pipeline pixels, digital sensors, digital pixels
R&D for MAPS at Belle and STAR well underway. They could be the first
experiments to have a MAPS-based vertex detector
Development at ILC in progress for both Vertex and ECAL. They are likely to need
stitched sensors
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18SNIC 2006
Acknowledgements
N. Allinson + MI3 collaborationA. FantJ. CrooksA. ClarkP. GasiorekN. GuerriniT. AnaxagorasR. HalsallM. Key-CharriereS. MartinM. FrenchM. Prydderch
G. VillaniM. TyndelP. AllportG. CasseA. EvansD. PriorJ. VelthuisP. DaunceyN. Watson+ ... all the others I forgot to mention!
M. Barbero and G. Verner, Haiwaii, for CAP and BelleW. Dulinski, Strasbourg, and N. Fourches, Saclay, for MIMOSA
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19SNIC 2006
Experimental resultsIn-pixel ADC Timing mode capture
In-pixel thresholding
Sparse data (timing mode)
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20SNIC 2006
CAP3 – full-sized!
928 x 128 pixels = 118,784
~4.3M transistors
21 mmActive area
20.88 mm
>93% active without active edgeprocessing
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21SNIC 2006
CAP3
36 transistors/pixel
5 metal layers5 sets CDS pairs
TSMC 0.25µm Process5-deep double pipeline
~120Kpixel sensor (128x928 pix)
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22SNIC 2006
Distribution of signals
Reference
Higher VT
Lower VT
Diode 3x3
Diode 1.2x1.2
GAA
4 diodes
Specs
25.04.451114MOS A
24.24.701144MOS B
24.44.141014MOS C
20.33.31673MOS A
23.83.87923MOS B
18.04.85873MOS C
20.14.94993MOS E
S/NNSType
Typical ‘Landau distribution
From different types of pixels. HEPAPS2
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23SNIC 2006
Single pixel S/N dependence on impact point. 1
• S/N varies over pixel between 12 and 4 before irradiation.
• S drops to zero at edges after 1014 p/cm2.G. Villani (RAL)
1015
No rad
Device simulation.Single diode 15 µm pixel
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24SNIC 2006
Single pixel S/N dependence on impact point. 2
1015
No rad 1014
No rad
Device simulation.4-diode 15 µm pixel
G. Villani (RAL)
• Less variation in S/N varies over pixel before and after irradiation.
• S at edges still usable after 1015 p/cm2.
Device simulation.Single diode 15 µm pixel
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25SNIC 2006
Signal from individual particles
Number of pixels in a “3x3” cluster
Cluster in S/N
Beta source (Ru106) test results. Sensors HEPAPS2.
Signal spread
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26SNIC 2006
FAPS Hit resolution• Hit Resolution≠spatial
resolution!!!• Take hits found in cell 2• Reconstruct x and y each
cell using Centre-of-Gravity• Calculate average hit
position• Determine residual position
for each memory cell• Hit resolution approximately
1.3 µm
J. Velthuis (Liv)
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27SNIC 2006
FAPS efficiency estimate• Find hits in all cells• Plot max S/Npixel in 3x3 area
around expected hit position if hit not found
• Define:
• Clearly, strongly dependent on seed cut. Lowering seed cut to 5σ yields inefficiency ranging between 0.08±0.08% and 0.5±0.1%
1)-(i cell seeds#cut seedmissed#Missed =
J. Velthuis (Liv)
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28SNIC 2006
Radiation test• Irradiated APS2 up to 1015 p/cm2 at
CERN.
– 1012 p/cm2 ILC requirement
– 2x1015 p/cm2 10 years ATLAS pixel
layer
• Repeat analysis at each dose with same
cuts
– Seed >8σ
– Neighbour >2σ
21e15
25e14
22e14
21e14
45e13
41e13
41e12
41e11
30
#APS2Dose (p/cm2)
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29SNIC 2006
Radiation test. Leakage current measurements
• Slope is due to leakage current
– Measure pedestal-reset(time)
– Fit straight line
– Plot average slope versus dose
• No significant increase in leakage current.
3MOS A
3MOS EEnd reset
Measure reset
Measure pedestal
J. Velthuis (Liv)