Ultra-Low-Power and Ultra-Low-Cost Short-Range Wireless Receivers in Nanoscale CMOS
CMOS Compatible Nanoscale Vacuum Tube - IEEEsite.ieee.org/sfbanano/files/2013/01/SIVNano_0219... ·...
Transcript of CMOS Compatible Nanoscale Vacuum Tube - IEEEsite.ieee.org/sfbanano/files/2013/01/SIVNano_0219... ·...
2013-02-24
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CMOS Compatible Nanoscale Vacuum Tube
02/19/2013
Jin-Woo Han, Ph. DJin Woo Han, Ph. DNASA Ames Research Center
Electronic Revolution from Transistors
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Evolution of Electronics
Vacuum Triode (1906) Junction Transistor (1948)
AbacusMechanical Switch
Vacuum TubeTransistor
IntegratedCircuitPascal calculator
(1670)
Pentium (1995)
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Roman Analog (1500)
Babbage engine(1830)
Eniac (1946)17,000 Tubes Tradic (1954)
800 TransistorsIBM (1983)
Operation Mechanism of Triode Devices
Grid
Vacuum Tube
e Curr
ent
Cathode AnodeVacuum
GateTransistor
Gate/Grid Voltage
Dra
in/A
node
ONOFF
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Source Drain
Silicon
g
• Switch• Amplifier
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Nano-Electro-Mechanical Switch
For low-standby power (~2007)By MEMS technology
For high mobility channel (~2004)By ALD technology
?
Back to the Past for Better Future
Gate
S D
For low gate delayBy MG technology
(~1990’)?
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Vacuum TubeVacuum TubeLate 19th Century- Expensive- Bulky- Fragile- Energy hungry
Relay Transistor1st Transistor 1st IC1947 (William Shockely)- Ge material- Instable
1849- Babbage Engine- 8000relays/5tons- Short lifetime
1959 (RobertNoyce)- Si material- SiO2 dielectric- Al gate
Now- Si substrate- SiO2 dielectric- Poly-Si gate
Edison Effects (1883)Hot filament (Cathode)
Current
Thomas Edison (1847-1931)
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Thermionic Emission Heat-induced flow of electron from a surface of metal to a vacuum
Metal WorkfunctionMinimum energy required for the electron overcomes the biding potential
Thomas Edison (1847-1931)
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Vacuum Diode, Fleming Oscillation Valve (1903)
John Ambrose Fleming (1849-1945)
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Fleming Oscillation ValveFirst application of the Edison Effect used as a rectifier and detector
Vacuum Triode, Audion (1906)
Grid
Lee de Forest (1873-1961)
Cathode Anode
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Lee de Forest (1873-1961)
Vacuum TriodeFirst device to provide power gain and radio transmitter.
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Transistor (1914)
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John Bardeen, William Shockley, Walter Brattain
AT&T Bell LabNobel Prize in 1956
Integrated Circuit (1958)
J k Kilb (1923 2005)
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Jack Kilby (1923-2005)
Texas InstrumentNobel Prize in 2000
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Evolution Scenario of Triode Devices
+ High gain + High performance+ P i di
Vacuum Tube+ Cheap+ Integrated Circuit+ Reliable
MOSFET
+ CMOS process+ Cheap !!+ L lif ti
Nano Vacuum Tube
+ Premier audio- Bulky, Fragile- Expensive- Short Lifetime- Power consumption
+ Low energy+ Long lifetime+ Variety applications- Low performance- Low breakdown
+ Long lifetime+ High power+ High performance+ Variety applications+ Premier audio
Vacuum ambient<50nm
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Cathode Anode
Back gate<5nm
<50nm
Benefit of Vacuum Channel – Speed
Silicon crystal latticeVacuum
Lattice ScatteringBallistic Transport
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Lattice ScatteringVelocity Saturation= 5 X 107cm/s
Ballistic Transportc = 3 X 1010cm/s
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Benefit of Vacuum – Temperature Immunity
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Crystal lattice scattering in semiconductor
Vacuum Channel is immune to high temperature.Military applications
Benefit of Vacuum – Radiation Immunity
R di ti i i ti i i d t
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Radiation ionization in semiconductor
Vacuum Channel is immune to radiation.Nuclear & space applications
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Weakness of Vacuum Device - Bulky
Bulky Tube
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Replacing a bad tubes ENIAC, Integration? Broken Tube
Weakness of Vacuum Device – Energy
EnergyElectron
QuantumWell
Workfunction
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Hot cathode
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What If Nanoscale Vacuum Device ?
Machining (mm scale)
Conventional vacuum tube
Wafer process (nm scale)
Nanoscale vacuum tube
Discrete componentOperation voltage > 100VThermionic emission (heater)Short lifetimeGlass package (fragile)High vacuum requirement
Integrated vacuum circuitOperation voltage <10VField emission (cold cathode)Long lifetime due to heating freeSemiconductor packageRelaxed vacuum requirement
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Fowler-Nordheim Tunneling
φ
Surface barrier Surface barrier bendingdue to applied field
Off-state On-state
Electron tunneling through a potential barrier, rather than escaping over it
Thermal excitation Photo excitation Tunneling
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E
C
E
C
Tunnelingdistance
VG < Vturn-on VG > Vturn-on
Vacuum Vacuum
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Field Emission Current Density∫ ∞+
∞−= dssFDsTNeJ ),,(),( φ
N(T,S): electron density T: temperature
F-N Tunneling Equation
Fowler-Nordheim Equation
⎥⎦
⎤⎢⎣
⎡−= )(
3)2(8exp
)(8
2/32/1
2
23yv
heFm
ythFeJ φπ
φπ
N(T,S): electron densityD(F,s,φ): tunneling probabilitys: kinetic energy
T: temperature F: applied fieldφ: work function
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m mass of electronφ work function of the cathodey function of F and φt(y), v(y) approximated as constants
J emission current densitye electron chargeh Planck’s constantF electric field at cathode
⎦⎣)( yφ
Simplified F-N Tunneling Equation
Where:
⎟⎠⎞
⎜⎝⎛ −=
VbaVI exp2
α emitting area
⎟⎠⎞
⎜⎝⎛−=⎟
⎠⎞
⎜⎝⎛
Vba
VI 1)ln(ln 2or
⎟⎟⎠
⎞⎜⎜⎝
⎛×=
−
2/1
26 4.10exp11
1056.1φφ
αβa α e tt g a eaφ emitter work functionβ field enhancement factor
⎠⎝1.1 φφ
βφ /1044.6 2/37×=b
Field Enhancement Factor
Anodeβ = F / V
rF: electric field at emitter tipV lt b t d d th d
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Cathoded
rhrh
1
24ln
2∗
−⎟⎠⎞
⎜⎝⎛
=βh
drV: voltage between anode and cathode rSpacer
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Low Voltage Operation – Small workfunction
1. Small workfunction of cathode
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Low Voltage Operation – Large field enhancement
1. Large field enhancement factor (sharp emitter tip & Short cathode to anode distance)
E
C
G
G
S
D
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Vacuum channel transistor MOSFET
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Relaxed Vacuum Requirement
Mean free path of electrons in air
Vacuum range Pressure (mbar) Mean free path
Ambient pressure 1013 68nm
Low vacuum 300-1 0.1-100um
Medium vacuum 1-10-3 0.1-100mm
High vacuum 10-3-10-7 10cm-1km
Ultra high vacuum 10-7-10-12 1km-105km
Extremely high vacuum <10-12 >105km
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150
Image of the Vacuum Transistor
150 nm
15
20
25
curr
ent (
A)
curr
ent (
μA)
10-8
10-6
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-4 -2 0 2 4 6 8 10 12
0
5
10
Col
lect
or
Col
lect
or c
Gate voltage (V)10-12
10-10
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Applications of Nano Vacuum TubeHigh Performance
Premier Audio Hifi into Smartphone
High Temperature StabilityAutomobile Industry
High Radiation ImmunityA I d
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Aerospace Industry
Subsequent Necessary Process
Vacuum Package ProcessMatured in MEMS Package
Potent Option : Wafer bonding
TSV wafer bonding DicingWire bonding Packaging
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• MEMS Gyroscope• MEMS Accelerometer• MEMS Microphone
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Thank you
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