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CIS / CIGS · CIS / C NING SYSTEM IGS KORThermScience Co.,Ltd. µ-FABTM LASER PATTERNING S µ-FABTM...
Transcript of CIS / CIGS · CIS / C NING SYSTEM IGS KORThermScience Co.,Ltd. µ-FABTM LASER PATTERNING S µ-FABTM...
Since 1999
LASER PATTER
CIS / C
www.kortherm.co.kr
RNING SYSTEM
CIGS
KORTherm Science Co.,Ltd.
µ-FABTM LASER PATTERNING S
µ-FABTM can
cells.
This high pultra-short
The system200 X 200
PICOSECOND LASER
SHORT PULSE LASERSSHORT PULSE LASERS
KORTherm Science Co.,Ltd.
SYSTEM
scribe thin film CIS/CIGS or crystallized Si wafer for solar
precision system creates patterns on each layers withpulse laser.
m is capable of processing objective material ranging from0 to size over a meter.
1,5
00
System Layout
2,000
µ-FABTM TECHNICAL DATAWORKSTATION LASER
Granite base for vibration isolationFume extraction systemClean room class: machine class 1000Enclosure isolated from machine coreInterlock work area door
Pico-second laserMode locked pulsed fiber Wavelength : 1064/532/35Average power : < 20WLaser mode : Single mode
MOTION SYSTEM VISION SYSTEM
Travel range : 200 x 200 or more
M ti d 1000 /
CCD resolution : > 1Mpixe
FOV (Fi ld f i ) 600Motion speed : 1000/s or more
Resolution : 0.5µm
Accuracy : ±4µm over full travel
Repeatability : ±2µm over full travel
Z-axis travel range : 20
Z-axis resolution : 1µm
FOV (Field of view) : 600µ
Frame rate : 30 fm
Data output : IEEE 1394
Focusing lens
Light : White type LED sp
SUBSTRATE MOUNT SYSTEM CONTROLL
Vacuum chuck for glass and wafer
Glass size : 200 x 200 or more
Wafer : 4 inch or more
Industrial PC & Dual flat p
Windows XP based user
Position synchronized las
Integrated operation of laIntegrated operation of la
CIS/CIGS patterning on Mo layer
Mo thickness : 0.4µm CIS/CIGS thickness : 3µmSubstrate : glass (50 x 50)g ( )Processing speed : 2m/sPatterning width : 10µmPatterning depth : 2.9 ~ 3µmNo damage allowance to Mo layerIsolation property : > 30MΩ
OPTICAL SYSTEM
laser55nm
e
Fixed Focusing HeadBeam collimation mirror
Turning mirrorSpot size : approx. 10µm
Galvo scanner head typeScanning area: 100 x 100 or more
f-theta lens
Beam spot size : <50 µm
DISPLACEMENT SENSOR
el
400Wavelength : 670nm
S t i 2µm x 400µm
pot
Spot size : 2μm
Resolution : 0.01μm
Measurement Function :
- 2D/3D Profiler
- Surface roughness(Ra, Rt, Rz)
LER S/W and etc.
panel monitors
interface
ser firing
ser and stages
Auto-Alignment S/W
Image recognition S/W
Auto-Focus S/W
High resolution microscope unitser and stages High resolution microscope unit
B/W CCD camera
Control software
3KORTherm Science Co.,Ltd.
Mo Patterning on Glass
Molybdenum Layer thickness: 1Substrate : glass (50 x 50)Processing speed : 1 m/sPatterning width : 10µmNo damage allowance to glass Isolation property : > 30MΩ
ITO Patterning on CIGS La(GLASS + Mo + CIGS + ITO or Zn
Layer thickness· molybdenum : 0.4µm · CIS/CIGS : 0.5µm· ITO or ZnO : 0.5µmSubstrate : glass (50 x 50)Process speed : 2m/sPatterning width : 10µmPatterning width : 10µmPatterning depth : 3.5µmNo damage allowance to CIS/C
ITO patterning on glass (Si based solar panel)
Layer thickness · ITO : 1µm · Glass : 0.7Substrate : glass (200 x 200Process speed : 1m/sPatterning width : 20µmPatterning depth : 1µmNo damage allowance to glass
* Kortherm Science Co., Ltd. sour* Sample test is available for vario
C-1203B, Woolim Lions Valley, 42phone : +82-32-623-6320~4 |
KORTherm
1 µm
layer
ayer nO)
CIGS
)
layer
rces lasers in 1064/532/355nm wavelength. ous applications at minimum charges.
25, Cheongchen-dong, Bupyeong-gu, Incheon, South Korea.fax : +82-32-623-6325 | e-mail : [email protected]
Science Co.,Ltd.