Chapter 3 Basics Semiconductor Devices and...
Transcript of Chapter 3 Basics Semiconductor Devices and...
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Chapter 3Basics Semiconductor
Devices and ProcessingHong Xiao, Ph. D.
www2.austin.cc.tx.us/HongXiao/Book.htm
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Objectives
• Identify at least two semiconductor materials from the periodic table of elements
• List n-type and p-type dopants• Describe a diode and a MOS transistor• List three kinds of chips made in the
semiconductor industry• List at least four basic processes required for a
chip manufacturing
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Topics
• What is semiconductor• Basic semiconductor devices• Basics of IC processing
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What is Semiconductor
• Conductivity between conductor and insulator• Conductivity can be controlled by dopant• Silicon and germanium• Compound semiconductors
– SiGe, SiC– GaAs, InP, etc.
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Periodic Table of the Elements
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Semiconductor Substrate and DopantsSubstrate
P-type Dopant
N-type Dopants
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Orbital and Energy Band Structure of an Atom
Valence band, Ev
Band gap, Eg
Valence shells
Nuclei
Conducting band, Ec
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Band Gap and Resistivity
Eg = 1.1 eV Eg = 8 eV
Aluminum
2.7 μΩ•cm
Sodium
4.7 μΩ•cm
Silicon
~ 1010 μΩ•cm
Silicon dioxide
> 1020 μΩ•cm
Conductors Semiconductor Insulator
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Crystal Structure of Single Crystal Silicon
Si
Si
Si
Si
Si -
Si Si Si
Si
SiSi
Si
Si
Si
Shared electrons
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Why Silicon
• Abundant, inexpensive• Thermal stability• Silicon dioxide is a strong dielectric and
relatively easy to form• Silicon dioxide can be used as diffusion
doping mask
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N-type (Arsenic) Doped Silicon and Its Donor Energy Band
Electron
-
Si Si Si
Si
SiSi
Si
Si
As
Extra
Valence band, Ev
Eg = 1.1 eV
Conducting band, Ec
Ed ~ 0.05 eV
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P-type (Boron) Doped Silicon and Its Donor Energy Band
Valence band, Ev
Eg = 1.1 eV
Conducting band, Ec
Ea ~ 0.05 eV
Electron-
Si Si Si
Si
SiSi
Si
Si
B
Hole
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Illustration of Hole Movement
Valence band, Ev
Eg = 1.1 eV
Conducting band, Ec
Ea ~ 0.05 eVElectron
Hole
Electron
HoleValence band, Ev
Eg = 1.1 eV
Conducting band, Ec
Valence band, Ev
Eg = 1.1 eV
Conducting band, Ec
Electron
Hole
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Dopant Concentration and Resistivity
Dopant concentration
Resistivity
P-type, Boron
N-type,Phosphorus
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Dopant Concentration and Resistivity
• Higher dopant concentration, more carriers (electrons or holes)
• Higher conductivity, lower resistivity• Electrons move faster than holes• N-type silicon has lower resistivity than p-
type silicon at the same dopant concentration
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Basic Devices
• Resistor• Capacitor• Diode• Bipolar Transistor• MOS Transistor
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Resistor
l hw
ρ
whlR ρ=
ρ: Resistivity
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Resistor
• Resistors are made by doped silicon or polysilicon on an IC chip
• Resistance is determined by length, line width, height, and dopant concentration
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Capacitors
dhlC κ=h
κ l
dκ: Dielectric Constant
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Capacitors
• Charge storage device• Memory Devices, esp. DRAM• Challenge: reduce capacitor size while
keeping the capacitance• High-κ dielectric materials
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Capacitors
Si
Poly SiOxide
Poly 1
Poly 2Dielectric Layer
Dielectric Layer
Heavily Doped Si
Parallel plate Stacked Deep Trench
Poly Si Si
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Metal Interconnection and RC Delay
I
Metal, ρDielectric, κ
d
w
l
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Diode
• P-N Junction• Allows electric current go through only
when it is positively biased.
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Diode
V1 V2
P2P1
• V1 > V2 , • P1 > P2,current current
• V1 < V2 , no current • P1 < P2, no current
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P N+ ++ ++ ++ ++ +
−−−−−−−−−−
Transition region
V0Vp
Vn
Figure 3.14
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Intrinsic Potential
• For silicon V0 ~ 0.7 V
20 lni
da
nNN
qkTV =
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I-V Curve of Diode
V
I
-I0
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Bipolar Transistor
• PNP or NPN• Switch• Amplifier• Analog circuit• Fast, high power device
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NPN and PNP Transistors
C
E
B N NP
EB
C
E
C
B P PN
EB
C
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NPN Bipolar Transistor
n-epip n+
P-substrate
Electron flow
n+
n+ buried layer
p+p+
SiO2
Al•Cu•SiBase CollectorEmitter
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P-substrate
n+ Buried Layer
n Epi
p pField oxide
Field oxide
CVD oxide
CVD oxide
n+
CVD oxide
Poly
CollectorEmitterBase
Metal
Sidewall Base Contact NPN Bipolar Transistor
n+
Field oxide
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MOS Transistor
• Metal-oxide-semiconductor• Also called MOSFET (MOS Field Effect
Transistor)• Simple, symmetric structure• Switch, good for digital, logic circuit• Most commonly used devices in the
semiconductor industry
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NMOS DeviceBasic Structure
VG
VDGroundn+
“Metal” Gate
Source Drainp-Si
n+
VDVG
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NMOS Device
+
“Metal” Gate
SiO2
Source Drainp-Si
n+
VD > 0VG > VT > 0
+ + + + + + +− − − − − − −
Electron flow
Positive charges
Negative chargesNo current
n+SiO2
Source Drainp-Si
n+
VDVG = 0
n
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PMOS Device
+
“Metal” Gate
SiO2
Source Drainn-Si
p+
VD > 0VG < VT < 0
+ + + + + + +− − − − − − −
Hole flow
Positive charges
Negative charges
No current
p+SiO2
Source Drainn-Si
p+
VDVG = 0
p
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MOSFET
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MOSFET and Drinking Fountain
MOSFET
• Source, drain, gate• Source/drain biased• Voltage on gate to
turn-on• Current flow between
source and drain
Drinking Fountain
• Source, drain, gate valve• Pressurized source• Pressure on gate (button)
to turn-on• Current flow between
source and drain
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Basic Circuits
• Bipolar• PMOS• NMOS• CMOS• BiCMOS
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Devices with Different Substrates
• Bipolar• MOSFET• BiCMOS
Silicon
• GaAs: up to 20 GHz device• Light emission diode (LED)
Compound
• Bipolar: high speed devicesGermanium
Dominate IC industry
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Market of Semiconductor Products
MOSFET
100%
50%
1980 1990 2000
Compound
Bipolar
88%
8%}} 4%
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Bipolar IC
• Earliest IC chip• 1961, four bipolar transistors, $150.00• Market share reducing rapidly• Still used for analog systems and power
devices• TV, VCR, Cellar phone, etc.
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PMOS
• First MOS field effect transistor, 1960• Used for digital logic devices in the 1960s• Replaced by NMOS after the mid-1970s
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NMOS
• Faster than PMOS• Used for digital logic devices in 1970s and
1980s• Electronic watches and hand-hold calculators• Replaced by CMOS after the 1980s
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CMOS
• Most commonly used circuit in IC chip since 1980s
• Low power consumption• High temperature stability• High noise immunity• Symmetric design
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CMOS Inverter
V in Vout
Vdd
Vss
PMOS
NMOS
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CMOS IC
p-Si USGn-SiBalk Si
Polysilicon
STI
n+ Source/Drain p+ Source/DrainGate Oxide
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BiCMOS• Combination of CMOS and bipolar circuits• Mainly in 1990s• CMOS as logic circuit• Bipolar for input/output• Faster than CMOS• Higher power consumption• Likely will have problem when power
supply voltage dropping below one volt
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IC Chips
• Memory• Microprocessor• Application specific IC (ASIC)
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Memory Chips
• Devices store data in the form of electric charge• Volatile memory
– Dynamic random access memory (DRAM)– S random access memory (SRAM)
• Non-volatile memory– Erasable programmable read only memory (EPROM)– FLASH
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DRAM
• Major component of computer and other electronic instruments for data storage
• Main driving force of IC processing development• One transistor, one capacitor
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Basic DRAM Memory Cell
Word line
Bit line Vdd
NMOS
Capacitor
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SRAM
• Fast memory application such as computer cache memory to store commonly used instructions
• Unit memory cell consists of six transistors• Much faster than DRAM• More complicated processing, more expensive
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EPROM
• Non-volatile memory• Keeping data ever without power supply• Computer bios memory which keeps boot
up instructions• Floating gate• UV light memory erase
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EPROM
n+Gate Oxide
Source Drainp-Si
n+
VDVG
Poly 1
Poly 2Inter-poly Dielectric
Passivation Dielectric
Floating Gate
Control Gate
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EPROM Programming
n+Gate Oxide
Source Drainp-Si
n+
Poly 2Inter-poly Dielectric
Passivation Dielectric
VD > 0VG>VT>0
e- e- e- e- e- e-
e-
Electron Tunneling
Floating Gate
Control Gate
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EPROM Programming
n+Gate Oxide
Source Drainp-Si
n+Floating Gate
Poly 2 Control GateInter-poly Dielectric
Passivation Dielectric
VD > 0VG>VT>0
e- e-
UV light
Electron Tunneling
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IC Fabrication Processes
IC
Fab.
Adding
Removing
Heating
Patterning
Ion implantation, Diffusion
Grown thin film, SiO2
Deposited thin film
Wafer Clean
Etch
CMP
Annealing
Reflow
Alloying
Photolithography
CVPVDElectrical
Patterned etch Blanket Strip Dielectri
Meta
Epi, Poly DielectriMeta
PR coating (adding) Baking (heating, Developing
MetaOxidImplantati
Exposure (heating)
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Basic Bipolar Process Steps
• Buried layer doping• Epitaxial silicon growth• Isolation and transistor doping• Interconnection • Passivation
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Buried Layer Implantation
P-silicon
SiO2
n+
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Epitaxy Grow
P-silicon
n+ buried layern-epi
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Isolation Implantation
p+n-epi
p+
P-silicon
n+ buried layer
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Emitter/Collector and Base Implantation
p+n-epi
p+
P-silicon
n+ buried layer
p n+n+
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Metal Etch
p+ p+
P-silicon
n+ buried layern-epi
Emitter Base CollectorSiO2
Al•Cu•Si
p+n +n
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Passivation Oxide DepositionEmitter Base Collector Al•Cu•Si
CVDoxide
SiO2
p+ p+
P-silicon
n+ buried layern-epi
p+n +n
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MOSFET
• Good for digital electronics• Major driving forces:
– Watches– Calculators– PC– Internet– Telecommunication
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1960s: PMOS Process
• Bipolar dominated• First MOSFET made in Bell Labs• Silicon substrate• Diffusion for doping
– Boron diffuses faster in silicon– PMOS
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PMOS Process Sequence (1960s)Wafer clean (R) Etch oxide (R)
Field oxidation (A) Strip photo resist (R)
Mask 1. (Source/Drain) (P) Al deposition (A)
Etch oxide (R) Mask 4. (Metal) (P)
Strip photo resist/Clean (R) Etch Aluminum (R)
S/D diffusion (B)/Oxidation (A) Strip photo resist (R)
Mask 2. (Gate) (P) Metal Anneal (H)
Etch oxide (R) CVD oxide (A)
Strip photo resist/Clean (R) Mask 5. (Bonding pad) (P)
Gate oxidation (A) Etch oxide (R)
Mask 3. (Contact) (P) Test and packaging
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Wafer clean, field oxidation, and photoresist coating
N-Silicon
Native Oxide
N-Silicon
N-Silicon
Field Oxide
N-Silicon
Primer
Photoresist
Field Oxide
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Photolithography and etch
N-Silicon
Source/Drain Mask
Photoresist
Field Oxide
N-Silicon
Source/Drain Mask
PR
UV Light
N-Silicon
PR
Field Oxide
N-Silicon
PR
Field Oxide
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Source/drain doping and gate oxidation
N-Silicon
Field Oxide
N-Siliconp+ p+
Field Oxide
N-Siliconp+ p+
Field Oxide
N-Siliconp+ p+
Gate Oxide Field Oxide
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Contact, Metallization, and Passivation
N-Siliconp+ p+
Gate Oxide Field Oxide
N-Siliconp+ p+
Gate Oxide Field OxideAl∙Si
N-Siliconp+
Gate Oxide Field Oxide
p+
N-Siliconp+
Gate Oxide CVD Cap Oxide
p+
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Illustration of a PMOS
N-Silicon
Gate Oxide CVD Cap Oxide
p+p+
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NMOS Process after mid-1970s
• Doping: ion implantation replaced diffusion• NMOS replaced PMOS
– NMOS is faster than PMOS• Self-aligned source/drain
• Main driving force: watches and calculators
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p-silicon
Field
oxid
e
Gate
Source/Drain Gate oxide
Phosphorus Ions, P+
n+ n+Poly
silico
n
Self-aligned S/D Implantation
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NMOS Process Sequence (1970s)Wafer clean PSG reflow Grow field oxide Mask 3. ContactMask 1. Active Area Etch PSG/USGEtch oxide Strip photo resist/CleanStrip photo resist/Clean Al deposition Grow gate oxide Mask 4. MetalDeposit polysilicon Etch Aluminum Mask 2. Gate Strip photo resist Etch polysilicon Metal anneal Strip photo resist/Clean CVD oxideS/D and poly dope implant Mask 5. Bonding padAnneal and poly reoxidation Etch oxideCVD USG/PSG Test and packaging
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NMOS Process Sequence
Clean
Oxide Etch
Poly Dep.
P+ Ion Implant
Field Oxidation
Gate Oxidation
Poly Etch
Annealing
p-Si
n+ n+
p-Si
p-Si p-Si
poly poly
polypoly
p-Si p-Si
p-Si p-Si
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NMOS Process Sequence
PSG Etch
Metal Etch
Metal Dep.
Nitride Dep.
PSG Dep. PSG Reflow
n+ n+
poly
poly
poly
poly
poly
polyPSG
PSG
PSG PSG
PSG
PSG
Al·Si
Al·SiAl·Si
SiN
p-Si
p-Si
p-Si
p-Si
p-Si
p-Si
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CMOS
• In the 1980s MOSFET IC surpassed bipolar• LCD replaced LED• Power consumption of circuit• CMOS replaced NMOS• Still dominates the IC market
• Backbone of information revolution
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Advantages of CMOS
• Low power consumption• High temperature stability• High noise immunity
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CMOS Inverter, Its Logic Symbol and Logic Table
Vin Vout
Vss
VddVin Vout
PMOS
NMOS In Out
0 1
1 0
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CMOS Chip with 2 Metal Layers
P-type substrate
p+p+
N-well
SiO2LOCOSBPSG
Al·Cu·Si
Metal 2, Al·Cu·Si
NitrideOxide
USG dep/etch/dep
Poly Si Gate
IMD
PMD
PD2PD1
p+ p+n+n+
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FSG
Metal 4 Copper
Passivation 1, USGPassivation 2, nitride
Lead-tin alloy bump
FSG
CopperMetal 2
FSG
FSG
CopperMetal 3
FSG
P-epiP-wafer
N-wellP-welln+STI p+ p+USGn+
PSG TungstenFSG
Cu Cu
Tantalum barrier layer
Nitride etch stop layer
Nitride seal layer
M 1
Tungsten local Interconnection
Tungsten plug
PMD nitride barrier layer
T/TiN barrier & adhesion layer
Tantalum barrier layer
CMOS Chip with 4 MetalLayers
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Summary
• Semiconductors are the materials with conductivity between conductor and insulator
• Its conductivity can be controlled by dopant concentration and applied voltage
• Silicon, germanium, and gallium arsenate • Silicon most popular: abundant and stable
oxide
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Summary
• Boron doped semiconductor is p-type, majority carriers are holes
• P, As, or Sb doped semiconductor is p-type, the majority carriers are electrons
• Higher dopant concentration, lower resistivity• At the same dopant concentration, n-type has
lower resistivity than p-type
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Summary
• R=ρ l/A• C=κ A/d• Capacitors are mainly used in DRAM • Bipolar transistors can amplify electric signal,
mainly used for analog systems• MOSFET electric controlled switch, mainly
used for digital systems
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Summary
• MOSFETs dominated IC industry since 1980s • Three kinds IC chips microprocessor,
memory, and ASIC• Advantages of CMOS: low power, high
temperature stability, high noise immunity, and clocking simplicity
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Summary
• The basic CMOS process steps are transistor making (front-end) and interconnection/passivation (back-end)
• The most basic semiconductor processes are adding, removing, heating, and patterning processes.