手部衞生及個人防護裝備應用 - Hospital Authority25 佩戴外科口罩的注意事項 選擇合適尺碼的口罩 戴妥口罩後,應避免再觸摸口罩 口罩如有破損或弄污,應立即更換或
奈米機電統合式服務平台User 1. NDL是否提供公版90nm光 罩? 2....
Transcript of 奈米機電統合式服務平台User 1. NDL是否提供公版90nm光 罩? 2....
-
奈米機電統合式服務平台
CONFIDENTIAL 1
2014/06/04
-
DisclaimerNDL SHALL NOT BE LIABLE FOR TECHNICAL OR EDITORIAL
ERRORS OR OMISSIONS CONTAINED HEREIN; NOR FORINCIDENTAL OR CONSEQUENTIAL DAMAGES RESULTING FROMTHE FURNISHING, PERFORMANCE, OR USE OF THIS MATERIAL.THE INFORMATION IN THIS MANUAL IS SUBJECT TO CHANGEWITHOUT ANY PRIOR NOTICE FOR THE PURPOSES OF IMPROVINGTHE PERFORMANCE AND FUNCTIONALITY OF ITS PRODUCTS.
No one is allowed to copy or distribute the whole or a part of this document without prior written permission of NDL.
NDL here means National Nano device Laboratories.
CONFIDENTIAL 2
-
Purpose
• This document is intended to help users who want toapply NDL 6” MEMS baseline process to do fabrication.
• Please be notified that users should follow the processguideline in this document to do fabrication without anyviolation.
Contact information : [email protected] (林昌賢工程師)
CONFIDENTIAL 3
-
CONTENTS
CONFIDENTIAL 4
Disclaimer ..………………………………………………………………... 02Purpose …..…………………………………………………………………. 03Process Flow Chart …………………………………………….......... 05
Metal Micromachining Process Flow ………………….... 06SOI Micromachining Process Flow ……………….......... 10
Mask layout and design rules ….……………………………….... 14Platform performance ………………………………................... 15
Metal Micromachining …………………......................... 15SOI Micromachining ………………................................ 23
製程服務申請相關事項 ………….…………......................... 28Equipment layout ……………………………….......................... 35
-
Metal Micromachining Process
(1) 4x Metal Patterning(2) Deep Dielectric Anisotropic Etching(3) Bulk Silicon Isotropic Etching
Surface Micromachining
SOI Micromachining Process
(1) Bulk Silicon anisotropic Etching(2) HF Isotropic Etching
Bulk Micromachining
Si Dielectric Metal Si SiO2
(1)(2)(3)
(1)(2)
NDL‐MEMS platform
CONFIDENTIAL 5
-
Si Substrate
ILD 沈積與Contact 曝光(ILD deposition and Lithography )
Contact 蝕刻(Contact etching)
第一層金屬層沈積與曝光(Metal 1 deposition and Lithography)
第一層金屬層圖形蝕刻(Metal 1 etching)
IMD1 沈積與CMP研磨(IMD1 deposition and CMP)
完成四層導線結構之MEMS結構堆疊(4-Metal layers structure)
氧化層蝕刻(SiO2 etching)
結構釋放(Structure Release)
Repeat 2nd to 4th Layers
下run前請先與工程師討論.
MetalOxideSi substrateRelease space
Process Flow Chart
CONFIDENTIAL 6
Metal Micromachining
-
ILD Oxide deposition
Contact 1 Lithography
Contact 1 etching
Metal 1 deposition
Metal 4 Pattern etching
Passivation deposition
Post Fabrication Process
Oxide deep etching and structure release
Passivation Lithography
• 總共約 100 道製程, 製程時間約 3 個月
Metal 1 Pattern Lithography
Metal 1 Pattern etching
IMD1 Oxide deposition
Oxide CMP
Repeat Process Metal 2 ~ 4 layer
CONFIDENTIAL 7
Process Flow ChartMetal Micromachining
-
CONFIDENTIAL 8
MEMS device–光罩流程
GDS NO. Name Dark Clear Describe
1 Contact ● Contact
2 Metal‐1 ● Metal 1 layer
3 Via12 ● Via 1
4 Metal‐2 ● Metal 2 layer
5 Via23 ● Via 2
6 Metal‐3 ● Metal 3 layer
7 Via34 ● Via 3
8 Metal‐4 ● Metal 4 layer
9 Passivation ● Passivation
Metal Micromachining
-
CONFIDENTIAL 9
MEMS device– Baseline
Process Step Spec
Passivation Passivation (SiNx/SiOx) 10k/4k
Metal 4M4 dep (TiN/Al/TiN) 250A/8k/1k
IMD3, PECVD TEOS 8k
Metal 3M3 dep (TiN/Al/TiN) 1k/4k/1k
IMD2, PECVD TEOS 8k
Metal 2M2 dep. (TiN/Al/TiN) 1k/4k/1k
IMD1, PECVD TEOS 8k
Metal 1M1 dep. (TiN/Al/TiN/Ti) 1k/4k/1k/250A
ILD , PECVD TEOS 10k
Metal Micromachining
-
Si Substrate
SOI wafer Hard mask沈積與黃光製程(Hard mask deposition and Lithography )
ICP Si 蝕刻(ICP Si etching)
Si
SiO2 濕蝕刻(SiO2 wet etching)
Hard mask 蝕刻(Hard mask etching)
Hard mask (SiO2)OxideSi Release space
CONFIDENTIAL 10
SOI Micromachining
下run前請先與工程師討論.
Process Flow Chart
-
Hard mask (Oxide) deposition
Hard mask Lithography
Hard mask etching
ICP Si etching
• 總共約 8 道製程, 製程時間約 15 個工作天
SiO2 and hard mask remove
CONFIDENTIAL 11
Process Flow ChartSOI Micromachining
-
CONFIDENTIAL 12
MEMS device–光罩流程
GDS NO. Name Dark Clear Describe
1 SOI Pattern ● For Etching Mask
SOI Micromachining
-
Si Substrate
Si
Etching Mask
Si Thickness:
-
(1) Via size >4um x 4um(2) Trench size (Sensing Gap) > 3um(3) Spring size >2um
(1) Via size (2) Trench size
(3) Spring size
CONFIDENTIAL 14
Mask layout and design rules
-
4X Metal Patterning Deep Dielectric Anisotropic Etching
Bulk Silicon Isotropic Etching
CONFIDENTIAL 15
Metal Micromachining
Platform performance
-
Oxide ~1um
Oxide ~0.8um
Oxide ~0.8um
Oxide ~0.8umAl Layer ~6000A
Al Layer ~6000A
Al Layer ~6250A
Al Layer ~9250A
CONFIDENTIAL 16
Platform performance• 4 Metal Layers Patterning
Metal Micromachining
-
文字文字
製程規格製程規格
文字文字
備註備註Process Step Spec
Passivation
Passivation (SiNx/SiOx,) 10k/4k
M4M4 dep (TiN/Al/TiN,) 250A/8k/1k
IMD3, PECVD TEOS 8k
M3M3 dep (TiN/Al/TiN,) 1k/4k/1k
IMD2, PECVD TEOS 8k
M2M2 dep. (TiN/Al/TiN,) 1k/4k/1k
IMD1, PECVD TEOS 8k
M1M1 dep. (TiN/Al/TiN/Ti,) 1k/4k/1k/250A
ILD , PECVD TEOS 10k
Process Equipment:
• PE-CVD
• Metal PVD
• TCP Etcher
• ICP Si Etcher
• CMP
• Wet Bench
• I-Line & Track
• SEM & In-line SEM
(ADI & AEI)Thickness tolerance ≤ 10%
CONFIDENTIAL 17
Platform performance• 4 Metal Layers Patterning
Metal Micromachining
-
5um
Al Hard Mask
CONFIDENTIAL 18
Platform performance• Deep Dielectric Anisotropic Etching
Metal Micromachining
-
製程規格製程規格 備註備註Process Structure Spec
Hard Mask 5KA Al/1KA Si3N4/ 9K Al
10k/4k
Oxide PE Oxide 5~6um 250A/8k/1k10k
4‐Metal Layers Structure Spec
M4M4 dep (TiN/Al/TiN,) 250A/8k/1k
IMD3, PECVD TEOS 8k
M3M3 dep (TiN/Al/TiN,) 1k/4k/1k
IMD2, PECVD TEOS 8k
M2M2 dep. (TiN/Al/TiN,) 1k/4k/1k
IMD1, PECVD TEOS 8k
M1M1 dep. (TiN/Al/TiN/Ti,) 1k/4k/1k/250A
ILD , PECVD TEOS 10k
Process Capabilities:
•Via Size >4um x 4um
• Trench Size (Sensing Gap) > 3um
• Al HM ≥1um
• Etch Deep 85o
• Open Area 10 (Ox/Al)
CONFIDENTIAL 19
Platform performance• Deep Dielectric Anisotropic Etching
Metal Micromachining
-
• Bulk Si Isotropic Etch
CONFIDENTIAL 20
Platform performanceMetal Micromachining
-
30um
Sidewall Underetch (~30um)
CONFIDENTIAL 21
Platform performance• Bulk Si Isotropic Etch
Metal Micromachining
-
製程規格製程規格 備註備註
CONFIDENTIAL 22
Process Structure Spec
TopLayer
Oxide MEMS Structure 5~6um4‐Metal Layers MEMS
Structure
BottomLayer
Si substrate4um x 4um
•Trench Size(Sensing Gap) >3um
• Hard Mask = MEMS Structure
• Sidewall Etch 5um/min
• Undercut Sidewall
-
CONFIDENTIAL 23
SOI Micromachining
Bulk Silicon anisotropic Etching
HF Isotropic Etching
Platform performance
-
20um Depth SOI Structure Etching Performance
CONFIDENTIAL 24
SOI Micromachining
• Bulk Silicon anisotropic Etching
Platform performance
-
製程規格製程規格 備註備註
Process Structure Spec.
MaskPhoto Resist 0.8um
HM : Oxide ; Nitride ; Al 2~5 kA
StructureLayer
Si Substrate(No Stop Layer) 4um x 4um
• Trench Size (Sensing Gap) > 3um
• HM = Oxide
• Etch Deep 30 (Si/PR)
CONFIDENTIAL 25
SOI Micromachining
• Bulk Silicon anisotropic Etching
Platform performance
-
2um Oxide Layer Etching
CONFIDENTIAL 26
SOI Micromachining
• HF Isotropic Etching
Platform performance
-
製程規格製程規格 備註備註
Process Structure Spec.
StructureLayer
Oxide on Si Substrate2 um
SOI Substrate
Equipment : Wet Bench
Process Release Process
Reactant BOE 7:1
Temp. Room Temp. 30 0C
Process Capabilities:
• Oxide Etch Rate > 1000A / min
• HF : NH4F = 7 : 1
CONFIDENTIAL 27
SOI Micromachining
• HF Isotropic Etching
Platform performance
-
MES線上申請MES線上申請
對外服務處
(簡秀芳,7610)
對外服務處
(簡秀芳,7610)
1.資料註冊 2.結案
3.通知取貨
1.資料註冊 2.結案
3.通知取貨
製程服務組(林昌賢,7538)製程服務組(林昌賢,7538)
1.接單 2.審核3.下線 4.完工1.接單 2.審核3.下線 4.完工
光罩製作
(洪鶯玲,7746)
光罩製作
(洪鶯玲,7746)
1.接單 2.審核
3.製作 4.交件
1.接單 2.審核
3.製作 4.交件
CONFIDENTIAL 28
NDL MEMS device ‐連續製程委託送件流程
-
•Mask manufacture•Lithography
•PR Trimming•Etch
•Customer management•Job arrangement•Manufacture
•ADI•ATI•AEI
委託者製程服務組
微影光罩組
蝕刻薄膜組
CONFIDENTIAL 29
NDL MEMS device ‐相關事務
-
CONFIDENTIAL 30
Coordinator Assistant(Co-work)
Question Answer
委託接單 製程整合工程師(林昌賢)
User,製程整合工程師(林昌賢)
1. 如何送件?
2. 如何聯絡?
1. 請上NDL網頁註冊帳號,並使用MES系統申請連續製程委託代工服務,請特別標註MEMS製程委託。
2. 對於MEMS連續製程委託代工服務有任何疑問,請與工程師林昌賢先生(分機7538)聯絡,或E‐mail : [email protected]信箱聯絡。
MASK 光罩工程師(洪鶯玲)
User 1. NDL是否提供公版90nm光罩?
2. 請問90nm光罩設計需要注意什麼? (Test key, Mark…etc.)
1. NDL並無提供公版MEMS光罩,需由委託者自行設計申請。
2. Mask design rule 由微影組同仁提供。
NDL MEMS device ‐Q&A
-
Coordinator Assistant(Co-work)
Question Answer
Lithography 黃光技術員 User,黃光工程師(許進財)
1. 每次黃光製程後欲確認線寬是否正確?
1. 黃光製程後可請技術員幫忙操作In‐line SEM確認,但委託者需提供相關圖形位置便於找尋,或可提前與技術員預約時段,一同觀測。
Thin film 薄膜技術員 User,薄膜工程師(周科吟)
1. 如何確認沈積厚度是否正確?
1. 薄膜設備會定時進行SPC測試,確保製程厚度,委託者亦可附上控片,用於量測該道製程之厚度。
Etching 蝕刻技術員 User,蝕刻工程師(許倬倫)
1. 請問如何確認蝕刻結果?
1. 除了以不同薄膜顏色來區分外,亦可使用 P‐10 或 N&K來量測蝕刻結果。
CMP CMP工程師 User,CMP工程師(段佑宗)
1. 請問要如何確認研磨速率?
1. 因研磨率每次都會不太一樣,故均需附上控片先測試研磨率,以確認研磨厚度一致。
ADI,AEI User User,黃光技術員蝕刻技術員製程工程師
1. 委託者如欲自行操作In‐line SEM,可依規定考核,通過後即可自行使用。
2. 如有相關之製程問題,可隨時詢問相關人員。
CONFIDENTIAL 31
NDL MEMS device ‐Q&A
-
Metal Micromachining Process
Post Fabrication Process
Oxide deposition (PECVD)Metal deposition (PVD)
LithographyEtching (Etcher)平坦化 (CMP)
Wet Etch (Wet Bench)Deep Oxide Etching (TCP Etcher)
Si Release (ICP Etcher)
ADI, AEI
AEI
CONFIDENTIAL 32
NDL MEMS device ‐委託送件流程Metal Micromachining
-
SOI Micromachining Process
Post Fabrication Process
Oxide deposition (Furnace)Lithography
Mask Etching (Etcher)
Deep Si Etching (ICP Etcher)
ADI, AEI
AEI
CONFIDENTIAL 33
NDL MEMS device ‐委託送件流程SOI Micromachining
-
1. 所有MEMS 製程委託送件皆須符合NDL一般送件流程與應遵守之相關規定,委託者須充分了解並同意後,始得送件;如有任何問題,請於申請委託前與各相關負責人連絡。
2. 委託者可於 NDL MES系統上自行查看委託件之進度,並依照技術員指定之時間,配合 ADI、ATI、AEI等檢測,如有任何問題,可與技術員或工程師連絡。
3. 使用者自行提供 SOI晶片(下線前請與工程師討論晶片容許規格)。
4. MEMS光罩,需由委託者自行設計申請。
5. SOI 元件之結構釋放 (BOE etching),請由使用者自行操作。
NDL MEMS device ‐注意事項
CONFIDENTIAL 34
-
NDL fab Equipment Layout
CONFIDENTIAL 35