Carrier Properties: II - nanoHUBCarrierProperties2b_S15.pdf · Carrier Properties: II Professor...
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![Page 1: Carrier Properties: II - nanoHUBCarrierProperties2b_S15.pdf · Carrier Properties: II Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette,](https://reader030.fdocuments.us/reader030/viewer/2022040913/5e88fb932e59b70b946d66a3/html5/thumbnails/1.jpg)
Lundstrom ECE 305 S15
ECE-305: Spring 2015
Carrier Properties: II
Professor Mark Lundstrom Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA [email protected]
1/23/15
Pierret, Semiconductor Device Fundamentals (SDF) pp. 32-49
Lundstrom ECE 305 S15 2
announcements
1. Exam 1: Friday, Jan. 30 in class see the class homepage for info https://nanohub.org/groups/ece305lundstrom
2. Do the homework!
3. Review the quizzes.
4. Ask questions on Piazza
![Page 2: Carrier Properties: II - nanoHUBCarrierProperties2b_S15.pdf · Carrier Properties: II Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette,](https://reader030.fdocuments.us/reader030/viewer/2022040913/5e88fb932e59b70b946d66a3/html5/thumbnails/2.jpg)
3
vocabulary 1. Miller indices 2. Diamond and Zinc blende lattices 3. Energy bands 4. Conduction band, valence band, band gap 5. Energy band diagrams 6. Intrinsic carriers, intrinsic carrier concentration 7. Effective mass and band structure 8. Doping 9. Intrinsic semiconductor 10. Extrinsic semiconductor 11. Density of States 12. Fermi function, Fermi level 13. Non-degenerate semiconductor
carrier concentration vs. temperature
4 4 Fig. 2.22 from R.F. Pierret, Semiconductor Device Fundamentals
extrinsic
intrinsic freeze-out
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Lundstrom ECE 305 S15 5
outline 1. Density of States
2. Fermi function
3. Carrier distributions
4. Carrier concentrations -given Fermi level -given doping densities
DOS
6
conduction “band”
valence “band”
4Na states / band
Na = 5 x 1022 /cm3 • • • • • • • • •
• • • • • • • • • How are the energy levels distributed with the bands?
density-of-states
Number of states per unit energy per unit volume. Units: (J-m3)-1
g E( )dE
Number of states in an energy range, dE, per m3.
![Page 4: Carrier Properties: II - nanoHUBCarrierProperties2b_S15.pdf · Carrier Properties: II Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette,](https://reader030.fdocuments.us/reader030/viewer/2022040913/5e88fb932e59b70b946d66a3/html5/thumbnails/4.jpg)
DOS
7
E
g E( )
EC
EV
ECtop
EVbot
gC E( )dE
gV E( )dE
gC E( )EC
ECtop
∫ dE = 4Na
gV E( )EVbot
EV
∫ dE = 4Na
density of states near the band edge
8
E
D E( )
EC
EV
ECtop
EVbot
gC E( ) = mn
* 2mn* E − EC( )
π 2!3
gV E( ) =
mp* 2mp
* EV − E( )π 2!3
![Page 5: Carrier Properties: II - nanoHUBCarrierProperties2b_S15.pdf · Carrier Properties: II Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette,](https://reader030.fdocuments.us/reader030/viewer/2022040913/5e88fb932e59b70b946d66a3/html5/thumbnails/5.jpg)
Lundstrom ECE 305 S15 9
outline
1. Density of States
2. Fermi function
3. Carrier distributions
4. Carrier concentrations -given Fermi level -given doping densities
✓
Occupation of states
10
1S2
2S2
2P6
3S2
3P2
4S0
Si atom (At. no. 14)
ener
gy
States below this energy have a high probability of being occupied.
States way above have very little probability of being occupied.
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Fermi level
11
E
D E( )
EC
EV
ECtop
EVbot
E = EF
(electrochemical potential)
f E( ) = 11+ e E−EF( ) kBT
(Fermi function)
occupying the bands
12
f E( )
E
0 1
small probability of being empty.
small probability of being filled.
Fermi function
f E( ) = 11+ e E−EF( ) kBT
0.5
EF f EF( ) = 12
Probability that a state at energy, E, is occupied in equilibrium.
![Page 7: Carrier Properties: II - nanoHUBCarrierProperties2b_S15.pdf · Carrier Properties: II Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette,](https://reader030.fdocuments.us/reader030/viewer/2022040913/5e88fb932e59b70b946d66a3/html5/thumbnails/7.jpg)
Fermi function
13
• • • • • • • • •
f E( )
E0
1
EF
Fermi level
kBT = 0.026 eV
f E( ) = 11+ e E−EF( ) kBT
1 2
effect of temperature
14
• • • • • • • • •
f E( )
E0
1
EF
kBT0
f E( ) = 11+ e E−EF( ) kBT
T1 > T0
T2 < T0
![Page 8: Carrier Properties: II - nanoHUBCarrierProperties2b_S15.pdf · Carrier Properties: II Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette,](https://reader030.fdocuments.us/reader030/viewer/2022040913/5e88fb932e59b70b946d66a3/html5/thumbnails/8.jpg)
electrons and holes
15
EC
EV
EG = 1.1eV
These states are way above the Fermi level.
These states are way below the Fermi level.
Typically, we will find the Fermi level somewhere inside the bandgap.
conduction band
16
• • • • • • • • •
f E( )
E0
1
EF
f E( ) = 11+ e E−EF( ) kBT
small probability of being full
f E( ) ≈ e EF−E( ) kBT
non-degenerate semiconductor E >> EF
EC
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valence band
17
• • • • • • • • •
f E( )
E0
1
EF
f E( ) = 11+ e E−EF( ) kBT
small probability of being empty
non-degenerate semiconductor
fh E( ) = 1− f E( ) = 11+ e EF −E( ) kBT
E << EF fh E( ) ≈ e E−EF( ) kBT
Non-degenerate semiconductors
18
EC
EV
EG = 1.1eV
≈ 3kBT
f EC( ) = 11+ e EC−EF( ) kBT
f EC( ) ≈ EF−EC( ) kBT
f EV( ) = 11+ e EV −EF( ) kBT
1− f EV( ) ≈ e EV −EF( ) kBT
![Page 10: Carrier Properties: II - nanoHUBCarrierProperties2b_S15.pdf · Carrier Properties: II Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette,](https://reader030.fdocuments.us/reader030/viewer/2022040913/5e88fb932e59b70b946d66a3/html5/thumbnails/10.jpg)
energy band diagram of an intrinsic semiconductor
19
EC
EV
EG = 1.1eV f E( ) = 11+ e E−EF( ) kBT
n = ni
EF = Ei
p = ni
temperature dependence of intrinsic density
20
EC
EV
EG = 1.1eV
f E( )
E
0 1
small probability of being empty.
Fermi function
1 2
EF
T2
T1 > T2n = ni T( )
p = ni T( )
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carrier concentration vs. temperature
21 21 Fig. 2.22 from R.F. Pierret, Semiconductor Device Fundamentals
intrinsic
energy band diagram of an n-type semiconductor
22
EC
EV
EG = 1.1eV f E( ) = 11+ e E−EF( ) kBT
n >> ni
EF
n ∝ e EF−EC( ) kBT
Expect:
n = NCeEF−EC( ) kBT
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carrier concentration vs. temperature
23 23 Fig. 2.22 from R.F. Pierret, Semiconductor Device Fundamentals
extrinsic
energy band diagram of an p-type semiconductor
24
EC
EV
EG = 1.1eV f E( ) = 11+ e E−EF( ) kBT
EF
p >> ni
p ∝ e EV −EF( ) kBT
Expect:
p = NVeEV −EF( ) kBT
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Lundstrom ECE 305 S15 25
outline
1. Density of States
2. Fermi function
3. Carrier distributions
4. Carrier concentrations -given Fermi level -given doping densities
✓
✓
distribution of electrons within a band
26
E
g E( )
EC
EV
ECtop
EVbot
gC E( )∝ E − EC( )
EF
n E( )dE = gC E( )dE × f E( )
p E( )dE = gV E( )dE × 1− f E( )( )
gV E( )∝ EV − E( )
![Page 14: Carrier Properties: II - nanoHUBCarrierProperties2b_S15.pdf · Carrier Properties: II Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette,](https://reader030.fdocuments.us/reader030/viewer/2022040913/5e88fb932e59b70b946d66a3/html5/thumbnails/14.jpg)
carrier distribution
27
from R.F. Pierret, Semiconductor Device Fundamentals
more carrier distributions
28 from R.F. Pierret, Semiconductor Device Fundamentals
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question
29
1) At T = 0 K, what is the density of holes in the valence band of a pure semiconductor?
a) the atomic density of the material. b) Avogadro’s number. c) The density of dopants. d) The packing fraction of the material. e) Zero
another question
30
2) At T = 0 K, where is the Fermi level located in a pure semiconductor?
a) Deep inside the conduction band b) Near EC. c) Near the middle of the bandgap. d) Near EV. e) Deep inside the valence band.
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electrons and holes
31
EC
EV
EG = 1.1eV
How many electrons in the conduction band?
How many holes in the valence band?
gC E( )dE
n E( )dE = f E( )gC E( )dEEF
n E( )dEEC
∞
∫ = f E( )gC E( )dEEC
∞
∫
final result (electrons)
32
n = NCeEF −EC( ) kBT
NC = 2
mn*kBT( )2π!2
⎡
⎣⎢⎢
⎤
⎦⎥⎥
3/2
“effective density of states”
For Si at T = 300K:
mn* = 1.182 (DOS effective mass)
NC = 3.23×1019 cm-3
E
x
EC
EV
EF
EC − EF > 3kBT
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final result (holes)
33
p = NVeEV −EF( ) kBT
NV = 2mp*kBT( )2π!2
⎡
⎣⎢⎢
⎤
⎦⎥⎥
3/2
“effective density of states”
For Si at T = 300K:
mn* = 0.81 (DOS effective mass)
NV = 1.83×1019 cm-3
E
x
EC
EV
EF
EF − EV > 3kBT
summary
34
p = NVeEV −EF( ) kBT
NV = 2mp*kBT( )2π!2
⎡
⎣⎢⎢
⎤
⎦⎥⎥
3/2
E
x
EC
EV
EF
n = NCeEF −EC( ) kBT
NC = 2
mn*kBT( )2π!2
⎡
⎣⎢⎢
⎤
⎦⎥⎥
3/2
Fermi level should be at least 3kBT away from a band edge.
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summary
35
1) Semiconductor devices are made by controllably putting a few electrons in the conduction band and a few holes in the valence band.
2) In equilibrium, the Fermi function gives the probability that a state at energy, E, is occupied by an electron.
3) The two parameters in the Fermi function are the Fermi level and the temperature.
4) The density of states, g(E), tells how the states are distributed in energy.
5) From the DOS and the Fermi function, we can relate the electron and hole densities to the location of the Fermi level.