Can we prepare organic materials for 2.1 D next generation...
Transcript of Can we prepare organic materials for 2.1 D next generation...
1
copy Hitachi Chemical Co Ltd 2014 All rights reservedcopy Hitachi Chemical Co Ltd 2010 All rights reserved
Can we prepare organic materials for 21 D next generation interposers
Hitachi Chemical Co LtdTsukuba Research Laboratory
Telecommunication Materials Development Center
Hikari Murai
2
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
3
copy Hitachi Chemical Co Ltd 2014 All rights reserved
P-BGA
Redistributed chip PKG
Coreless PKG
WL-CSPFC-DDR
Flip Chip BGA
BOC
PoP Embedded
Stacked CSPTSV PKG
Chip on chip PKG
FC mounting
Multi chip mounting
High performance mounting
Solder resist tech
Under fill techSubstrate tech
Build-up tech
Buffer coating tech
Die bonding paste tech EMC tech
Die bonding film tech
COFRFID
Sensor
LED
Solar battery Consumer equip
Auto mobilePhoto sensitive film tech
Trend of Advanced PKG
QFP
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
FCCSPfor Smartphone Tablet
Technology node PKG height [mm]
Die size [mm]Die thickness [μm]Cu pillar Pitch [μm]
Work sizeMolding methodology
Molding material
20nm0605-157050
Strip sizeTransfer
TabletGranule
16nm0555-156040
PNL300mmCompressionGranulesheet
10nm0555-156040
PNL 400mmCompLami
Sheet
lt 10nm0505-155035
PNL600mmCompLami
Sheet
lt 10nm0505-155035
PNL600mmCompLami
Sheet
Core material
Solder resist
Molding material
CUFNCF
E-705G 770G2-5ppmC
FZ-2700GA
MUFCEL-1800HF
CEL-3730 Series
E-770G
FZ SR-F
MUF EBIS
NCF
New type0-3ppmC
FZ SR-F
EBISNew type
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials4
Low CTE Substrate ( E-770G(LH) )
Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Ultra low CTE
productivity
High reliabilities
Fine-pitch available
MUF ( Tablet Granule )
Sheet MUF ( EBIS )
Sheet MUF ( Fine pitch)
Materials
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
FOWLPfor Smartphone Tablet
Technology node PKG height [mm]
Die size [mm]Die thickness [μm]
Ball Pitch [μm]Work size
Molding methodologyMolding material
20nm0455-10040040
12inchCompression
LiquidGranule
16nm0405-10035040
12inchCompressionGranulesheet
10nm0405-10035035
PNL 400mmCompLami
Sheet
lt 10nm0355-10030035
PNL600mmCompLami
Sheet
lt 10nm0355-10030030
PNL600mmCompLami
Sheet
RDL (Liquid)RDL (Film)
Temporary bond film
Molding material
HD-8930DIF
New type
CompCEL-1800HF
HD-8940DIF
CompEBIS
HD-8940New type
CompLamiNew type
PKG Trend amp Roadmap of Hitachi Materials5
Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities
Narrow pitch availableproductivity
High reliabilitiesMaterials
High resolution amp reliabilities
Die
Temporary bond filmMolding material
( LiquidGranule )
RDL ( HDDIF )
12inch
PNL400mmSheet ( EBIS )
PNL600mmSheet ( Fine pitch)
New type DIF3D-FOWLP
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
21 25 3D-PKGfor PC Server
Technology node ]Die size [mm]]Ball Pitch [μm]
Gap between Die amp SubLS [μm]
SR thickness [μm]SRO
Anti-TCT
20nm2512030
9-141870
2000cyc
16nm2810030
5-121560
2000cyc
10nm308030
5-121560
3000cyc
lt 10nm306020
3-101250
3000cyc
lt 10nm306020
3-101250
3000cyc
RDL (Film)
Buildup Air foilNFT
Glass film
UF material
DIF
55-33μm
10050μmt
CUFNCF
DIF
22μm
10050μmt
CUFNCF
DIF
11μm
10050μmt
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials6
Keywords- High electrical performance- High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Low warpage
MaterialsHigh resolution amp reliabilities
25D-PKG 3D-PKG
Si-IP
High process-abilityFine-pitch available
Low CTE amp Low tan ( Df )
Lid
Extremely low CTE substrate
High density wiring layers21D-PKG
DieCUF
Si-IP25D-PKG
TSV3D-PKG
7
copy Hitachi Chemical Co Ltd 2014 All rights reserved
POP
25D-PKG
3D-PKG
eWLB
3D-eWLB
Si-IP
QFN
Integrated technology for newly PKG
Needs Ultra Low CTE
High themal conduction
LowεLow tanδ
High modulus
High adherence
Low warpage
Reliability
High radiation of heat
Electric performance
FC-BGA
Low End Middle range High End
Needs
Ultra fine line Low cost High speedBig volume
Integrated technology
Adherence Insulation Photosensitive
Process Evaluation
Low
Per
form
ance
hi
gh
New processmaterial Proposalfor harmonized field
8
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
9
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Pre-applied under Fill CEL-C UF series
3D PKG
25D PKG Good gap filling
Good connection Short cure bonding
Temporary bonding film XTM series
Easy debonding Heat resistance
Low warpage High insulation
Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series
Fine patterning
Good molding
CMP HS series High removal rate Good planarity
High resolution TrenchPhoto-via
TSV Related Materials
Underfill CEL-C series
High thermal Good adhesion
Thermally conductive film HS series
Materials for Fine Pattering
EMC CEL seriesEMC film EB series
High resolutionDry film resist for Cu pillar
RDL DIF series
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
2
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
3
copy Hitachi Chemical Co Ltd 2014 All rights reserved
P-BGA
Redistributed chip PKG
Coreless PKG
WL-CSPFC-DDR
Flip Chip BGA
BOC
PoP Embedded
Stacked CSPTSV PKG
Chip on chip PKG
FC mounting
Multi chip mounting
High performance mounting
Solder resist tech
Under fill techSubstrate tech
Build-up tech
Buffer coating tech
Die bonding paste tech EMC tech
Die bonding film tech
COFRFID
Sensor
LED
Solar battery Consumer equip
Auto mobilePhoto sensitive film tech
Trend of Advanced PKG
QFP
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
FCCSPfor Smartphone Tablet
Technology node PKG height [mm]
Die size [mm]Die thickness [μm]Cu pillar Pitch [μm]
Work sizeMolding methodology
Molding material
20nm0605-157050
Strip sizeTransfer
TabletGranule
16nm0555-156040
PNL300mmCompressionGranulesheet
10nm0555-156040
PNL 400mmCompLami
Sheet
lt 10nm0505-155035
PNL600mmCompLami
Sheet
lt 10nm0505-155035
PNL600mmCompLami
Sheet
Core material
Solder resist
Molding material
CUFNCF
E-705G 770G2-5ppmC
FZ-2700GA
MUFCEL-1800HF
CEL-3730 Series
E-770G
FZ SR-F
MUF EBIS
NCF
New type0-3ppmC
FZ SR-F
EBISNew type
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials4
Low CTE Substrate ( E-770G(LH) )
Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Ultra low CTE
productivity
High reliabilities
Fine-pitch available
MUF ( Tablet Granule )
Sheet MUF ( EBIS )
Sheet MUF ( Fine pitch)
Materials
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
FOWLPfor Smartphone Tablet
Technology node PKG height [mm]
Die size [mm]Die thickness [μm]
Ball Pitch [μm]Work size
Molding methodologyMolding material
20nm0455-10040040
12inchCompression
LiquidGranule
16nm0405-10035040
12inchCompressionGranulesheet
10nm0405-10035035
PNL 400mmCompLami
Sheet
lt 10nm0355-10030035
PNL600mmCompLami
Sheet
lt 10nm0355-10030030
PNL600mmCompLami
Sheet
RDL (Liquid)RDL (Film)
Temporary bond film
Molding material
HD-8930DIF
New type
CompCEL-1800HF
HD-8940DIF
CompEBIS
HD-8940New type
CompLamiNew type
PKG Trend amp Roadmap of Hitachi Materials5
Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities
Narrow pitch availableproductivity
High reliabilitiesMaterials
High resolution amp reliabilities
Die
Temporary bond filmMolding material
( LiquidGranule )
RDL ( HDDIF )
12inch
PNL400mmSheet ( EBIS )
PNL600mmSheet ( Fine pitch)
New type DIF3D-FOWLP
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
21 25 3D-PKGfor PC Server
Technology node ]Die size [mm]]Ball Pitch [μm]
Gap between Die amp SubLS [μm]
SR thickness [μm]SRO
Anti-TCT
20nm2512030
9-141870
2000cyc
16nm2810030
5-121560
2000cyc
10nm308030
5-121560
3000cyc
lt 10nm306020
3-101250
3000cyc
lt 10nm306020
3-101250
3000cyc
RDL (Film)
Buildup Air foilNFT
Glass film
UF material
DIF
55-33μm
10050μmt
CUFNCF
DIF
22μm
10050μmt
CUFNCF
DIF
11μm
10050μmt
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials6
Keywords- High electrical performance- High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Low warpage
MaterialsHigh resolution amp reliabilities
25D-PKG 3D-PKG
Si-IP
High process-abilityFine-pitch available
Low CTE amp Low tan ( Df )
Lid
Extremely low CTE substrate
High density wiring layers21D-PKG
DieCUF
Si-IP25D-PKG
TSV3D-PKG
7
copy Hitachi Chemical Co Ltd 2014 All rights reserved
POP
25D-PKG
3D-PKG
eWLB
3D-eWLB
Si-IP
QFN
Integrated technology for newly PKG
Needs Ultra Low CTE
High themal conduction
LowεLow tanδ
High modulus
High adherence
Low warpage
Reliability
High radiation of heat
Electric performance
FC-BGA
Low End Middle range High End
Needs
Ultra fine line Low cost High speedBig volume
Integrated technology
Adherence Insulation Photosensitive
Process Evaluation
Low
Per
form
ance
hi
gh
New processmaterial Proposalfor harmonized field
8
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
9
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Pre-applied under Fill CEL-C UF series
3D PKG
25D PKG Good gap filling
Good connection Short cure bonding
Temporary bonding film XTM series
Easy debonding Heat resistance
Low warpage High insulation
Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series
Fine patterning
Good molding
CMP HS series High removal rate Good planarity
High resolution TrenchPhoto-via
TSV Related Materials
Underfill CEL-C series
High thermal Good adhesion
Thermally conductive film HS series
Materials for Fine Pattering
EMC CEL seriesEMC film EB series
High resolutionDry film resist for Cu pillar
RDL DIF series
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
3
copy Hitachi Chemical Co Ltd 2014 All rights reserved
P-BGA
Redistributed chip PKG
Coreless PKG
WL-CSPFC-DDR
Flip Chip BGA
BOC
PoP Embedded
Stacked CSPTSV PKG
Chip on chip PKG
FC mounting
Multi chip mounting
High performance mounting
Solder resist tech
Under fill techSubstrate tech
Build-up tech
Buffer coating tech
Die bonding paste tech EMC tech
Die bonding film tech
COFRFID
Sensor
LED
Solar battery Consumer equip
Auto mobilePhoto sensitive film tech
Trend of Advanced PKG
QFP
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
FCCSPfor Smartphone Tablet
Technology node PKG height [mm]
Die size [mm]Die thickness [μm]Cu pillar Pitch [μm]
Work sizeMolding methodology
Molding material
20nm0605-157050
Strip sizeTransfer
TabletGranule
16nm0555-156040
PNL300mmCompressionGranulesheet
10nm0555-156040
PNL 400mmCompLami
Sheet
lt 10nm0505-155035
PNL600mmCompLami
Sheet
lt 10nm0505-155035
PNL600mmCompLami
Sheet
Core material
Solder resist
Molding material
CUFNCF
E-705G 770G2-5ppmC
FZ-2700GA
MUFCEL-1800HF
CEL-3730 Series
E-770G
FZ SR-F
MUF EBIS
NCF
New type0-3ppmC
FZ SR-F
EBISNew type
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials4
Low CTE Substrate ( E-770G(LH) )
Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Ultra low CTE
productivity
High reliabilities
Fine-pitch available
MUF ( Tablet Granule )
Sheet MUF ( EBIS )
Sheet MUF ( Fine pitch)
Materials
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
FOWLPfor Smartphone Tablet
Technology node PKG height [mm]
Die size [mm]Die thickness [μm]
Ball Pitch [μm]Work size
Molding methodologyMolding material
20nm0455-10040040
12inchCompression
LiquidGranule
16nm0405-10035040
12inchCompressionGranulesheet
10nm0405-10035035
PNL 400mmCompLami
Sheet
lt 10nm0355-10030035
PNL600mmCompLami
Sheet
lt 10nm0355-10030030
PNL600mmCompLami
Sheet
RDL (Liquid)RDL (Film)
Temporary bond film
Molding material
HD-8930DIF
New type
CompCEL-1800HF
HD-8940DIF
CompEBIS
HD-8940New type
CompLamiNew type
PKG Trend amp Roadmap of Hitachi Materials5
Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities
Narrow pitch availableproductivity
High reliabilitiesMaterials
High resolution amp reliabilities
Die
Temporary bond filmMolding material
( LiquidGranule )
RDL ( HDDIF )
12inch
PNL400mmSheet ( EBIS )
PNL600mmSheet ( Fine pitch)
New type DIF3D-FOWLP
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
21 25 3D-PKGfor PC Server
Technology node ]Die size [mm]]Ball Pitch [μm]
Gap between Die amp SubLS [μm]
SR thickness [μm]SRO
Anti-TCT
20nm2512030
9-141870
2000cyc
16nm2810030
5-121560
2000cyc
10nm308030
5-121560
3000cyc
lt 10nm306020
3-101250
3000cyc
lt 10nm306020
3-101250
3000cyc
RDL (Film)
Buildup Air foilNFT
Glass film
UF material
DIF
55-33μm
10050μmt
CUFNCF
DIF
22μm
10050μmt
CUFNCF
DIF
11μm
10050μmt
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials6
Keywords- High electrical performance- High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Low warpage
MaterialsHigh resolution amp reliabilities
25D-PKG 3D-PKG
Si-IP
High process-abilityFine-pitch available
Low CTE amp Low tan ( Df )
Lid
Extremely low CTE substrate
High density wiring layers21D-PKG
DieCUF
Si-IP25D-PKG
TSV3D-PKG
7
copy Hitachi Chemical Co Ltd 2014 All rights reserved
POP
25D-PKG
3D-PKG
eWLB
3D-eWLB
Si-IP
QFN
Integrated technology for newly PKG
Needs Ultra Low CTE
High themal conduction
LowεLow tanδ
High modulus
High adherence
Low warpage
Reliability
High radiation of heat
Electric performance
FC-BGA
Low End Middle range High End
Needs
Ultra fine line Low cost High speedBig volume
Integrated technology
Adherence Insulation Photosensitive
Process Evaluation
Low
Per
form
ance
hi
gh
New processmaterial Proposalfor harmonized field
8
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
9
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Pre-applied under Fill CEL-C UF series
3D PKG
25D PKG Good gap filling
Good connection Short cure bonding
Temporary bonding film XTM series
Easy debonding Heat resistance
Low warpage High insulation
Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series
Fine patterning
Good molding
CMP HS series High removal rate Good planarity
High resolution TrenchPhoto-via
TSV Related Materials
Underfill CEL-C series
High thermal Good adhesion
Thermally conductive film HS series
Materials for Fine Pattering
EMC CEL seriesEMC film EB series
High resolutionDry film resist for Cu pillar
RDL DIF series
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
FCCSPfor Smartphone Tablet
Technology node PKG height [mm]
Die size [mm]Die thickness [μm]Cu pillar Pitch [μm]
Work sizeMolding methodology
Molding material
20nm0605-157050
Strip sizeTransfer
TabletGranule
16nm0555-156040
PNL300mmCompressionGranulesheet
10nm0555-156040
PNL 400mmCompLami
Sheet
lt 10nm0505-155035
PNL600mmCompLami
Sheet
lt 10nm0505-155035
PNL600mmCompLami
Sheet
Core material
Solder resist
Molding material
CUFNCF
E-705G 770G2-5ppmC
FZ-2700GA
MUFCEL-1800HF
CEL-3730 Series
E-770G
FZ SR-F
MUF EBIS
NCF
New type0-3ppmC
FZ SR-F
EBISNew type
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials4
Low CTE Substrate ( E-770G(LH) )
Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Ultra low CTE
productivity
High reliabilities
Fine-pitch available
MUF ( Tablet Granule )
Sheet MUF ( EBIS )
Sheet MUF ( Fine pitch)
Materials
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
FOWLPfor Smartphone Tablet
Technology node PKG height [mm]
Die size [mm]Die thickness [μm]
Ball Pitch [μm]Work size
Molding methodologyMolding material
20nm0455-10040040
12inchCompression
LiquidGranule
16nm0405-10035040
12inchCompressionGranulesheet
10nm0405-10035035
PNL 400mmCompLami
Sheet
lt 10nm0355-10030035
PNL600mmCompLami
Sheet
lt 10nm0355-10030030
PNL600mmCompLami
Sheet
RDL (Liquid)RDL (Film)
Temporary bond film
Molding material
HD-8930DIF
New type
CompCEL-1800HF
HD-8940DIF
CompEBIS
HD-8940New type
CompLamiNew type
PKG Trend amp Roadmap of Hitachi Materials5
Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities
Narrow pitch availableproductivity
High reliabilitiesMaterials
High resolution amp reliabilities
Die
Temporary bond filmMolding material
( LiquidGranule )
RDL ( HDDIF )
12inch
PNL400mmSheet ( EBIS )
PNL600mmSheet ( Fine pitch)
New type DIF3D-FOWLP
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
21 25 3D-PKGfor PC Server
Technology node ]Die size [mm]]Ball Pitch [μm]
Gap between Die amp SubLS [μm]
SR thickness [μm]SRO
Anti-TCT
20nm2512030
9-141870
2000cyc
16nm2810030
5-121560
2000cyc
10nm308030
5-121560
3000cyc
lt 10nm306020
3-101250
3000cyc
lt 10nm306020
3-101250
3000cyc
RDL (Film)
Buildup Air foilNFT
Glass film
UF material
DIF
55-33μm
10050μmt
CUFNCF
DIF
22μm
10050μmt
CUFNCF
DIF
11μm
10050μmt
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials6
Keywords- High electrical performance- High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Low warpage
MaterialsHigh resolution amp reliabilities
25D-PKG 3D-PKG
Si-IP
High process-abilityFine-pitch available
Low CTE amp Low tan ( Df )
Lid
Extremely low CTE substrate
High density wiring layers21D-PKG
DieCUF
Si-IP25D-PKG
TSV3D-PKG
7
copy Hitachi Chemical Co Ltd 2014 All rights reserved
POP
25D-PKG
3D-PKG
eWLB
3D-eWLB
Si-IP
QFN
Integrated technology for newly PKG
Needs Ultra Low CTE
High themal conduction
LowεLow tanδ
High modulus
High adherence
Low warpage
Reliability
High radiation of heat
Electric performance
FC-BGA
Low End Middle range High End
Needs
Ultra fine line Low cost High speedBig volume
Integrated technology
Adherence Insulation Photosensitive
Process Evaluation
Low
Per
form
ance
hi
gh
New processmaterial Proposalfor harmonized field
8
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
9
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Pre-applied under Fill CEL-C UF series
3D PKG
25D PKG Good gap filling
Good connection Short cure bonding
Temporary bonding film XTM series
Easy debonding Heat resistance
Low warpage High insulation
Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series
Fine patterning
Good molding
CMP HS series High removal rate Good planarity
High resolution TrenchPhoto-via
TSV Related Materials
Underfill CEL-C series
High thermal Good adhesion
Thermally conductive film HS series
Materials for Fine Pattering
EMC CEL seriesEMC film EB series
High resolutionDry film resist for Cu pillar
RDL DIF series
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
FOWLPfor Smartphone Tablet
Technology node PKG height [mm]
Die size [mm]Die thickness [μm]
Ball Pitch [μm]Work size
Molding methodologyMolding material
20nm0455-10040040
12inchCompression
LiquidGranule
16nm0405-10035040
12inchCompressionGranulesheet
10nm0405-10035035
PNL 400mmCompLami
Sheet
lt 10nm0355-10030035
PNL600mmCompLami
Sheet
lt 10nm0355-10030030
PNL600mmCompLami
Sheet
RDL (Liquid)RDL (Film)
Temporary bond film
Molding material
HD-8930DIF
New type
CompCEL-1800HF
HD-8940DIF
CompEBIS
HD-8940New type
CompLamiNew type
PKG Trend amp Roadmap of Hitachi Materials5
Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities
Narrow pitch availableproductivity
High reliabilitiesMaterials
High resolution amp reliabilities
Die
Temporary bond filmMolding material
( LiquidGranule )
RDL ( HDDIF )
12inch
PNL400mmSheet ( EBIS )
PNL600mmSheet ( Fine pitch)
New type DIF3D-FOWLP
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
21 25 3D-PKGfor PC Server
Technology node ]Die size [mm]]Ball Pitch [μm]
Gap between Die amp SubLS [μm]
SR thickness [μm]SRO
Anti-TCT
20nm2512030
9-141870
2000cyc
16nm2810030
5-121560
2000cyc
10nm308030
5-121560
3000cyc
lt 10nm306020
3-101250
3000cyc
lt 10nm306020
3-101250
3000cyc
RDL (Film)
Buildup Air foilNFT
Glass film
UF material
DIF
55-33μm
10050μmt
CUFNCF
DIF
22μm
10050μmt
CUFNCF
DIF
11μm
10050μmt
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials6
Keywords- High electrical performance- High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Low warpage
MaterialsHigh resolution amp reliabilities
25D-PKG 3D-PKG
Si-IP
High process-abilityFine-pitch available
Low CTE amp Low tan ( Df )
Lid
Extremely low CTE substrate
High density wiring layers21D-PKG
DieCUF
Si-IP25D-PKG
TSV3D-PKG
7
copy Hitachi Chemical Co Ltd 2014 All rights reserved
POP
25D-PKG
3D-PKG
eWLB
3D-eWLB
Si-IP
QFN
Integrated technology for newly PKG
Needs Ultra Low CTE
High themal conduction
LowεLow tanδ
High modulus
High adherence
Low warpage
Reliability
High radiation of heat
Electric performance
FC-BGA
Low End Middle range High End
Needs
Ultra fine line Low cost High speedBig volume
Integrated technology
Adherence Insulation Photosensitive
Process Evaluation
Low
Per
form
ance
hi
gh
New processmaterial Proposalfor harmonized field
8
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
9
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Pre-applied under Fill CEL-C UF series
3D PKG
25D PKG Good gap filling
Good connection Short cure bonding
Temporary bonding film XTM series
Easy debonding Heat resistance
Low warpage High insulation
Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series
Fine patterning
Good molding
CMP HS series High removal rate Good planarity
High resolution TrenchPhoto-via
TSV Related Materials
Underfill CEL-C series
High thermal Good adhesion
Thermally conductive film HS series
Materials for Fine Pattering
EMC CEL seriesEMC film EB series
High resolutionDry film resist for Cu pillar
RDL DIF series
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Year 2014 15 2016 17 2018
21 25 3D-PKGfor PC Server
Technology node ]Die size [mm]]Ball Pitch [μm]
Gap between Die amp SubLS [μm]
SR thickness [μm]SRO
Anti-TCT
20nm2512030
9-141870
2000cyc
16nm2810030
5-121560
2000cyc
10nm308030
5-121560
3000cyc
lt 10nm306020
3-101250
3000cyc
lt 10nm306020
3-101250
3000cyc
RDL (Film)
Buildup Air foilNFT
Glass film
UF material
DIF
55-33μm
10050μmt
CUFNCF
DIF
22μm
10050μmt
CUFNCF
DIF
11μm
10050μmt
Photo NCF
PKG Trend amp Roadmap of Hitachi Materials6
Keywords- High electrical performance- High density fine pitch- Low warpage amp high reliabilities
Narrow pitch available
Low warpage
MaterialsHigh resolution amp reliabilities
25D-PKG 3D-PKG
Si-IP
High process-abilityFine-pitch available
Low CTE amp Low tan ( Df )
Lid
Extremely low CTE substrate
High density wiring layers21D-PKG
DieCUF
Si-IP25D-PKG
TSV3D-PKG
7
copy Hitachi Chemical Co Ltd 2014 All rights reserved
POP
25D-PKG
3D-PKG
eWLB
3D-eWLB
Si-IP
QFN
Integrated technology for newly PKG
Needs Ultra Low CTE
High themal conduction
LowεLow tanδ
High modulus
High adherence
Low warpage
Reliability
High radiation of heat
Electric performance
FC-BGA
Low End Middle range High End
Needs
Ultra fine line Low cost High speedBig volume
Integrated technology
Adherence Insulation Photosensitive
Process Evaluation
Low
Per
form
ance
hi
gh
New processmaterial Proposalfor harmonized field
8
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
9
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Pre-applied under Fill CEL-C UF series
3D PKG
25D PKG Good gap filling
Good connection Short cure bonding
Temporary bonding film XTM series
Easy debonding Heat resistance
Low warpage High insulation
Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series
Fine patterning
Good molding
CMP HS series High removal rate Good planarity
High resolution TrenchPhoto-via
TSV Related Materials
Underfill CEL-C series
High thermal Good adhesion
Thermally conductive film HS series
Materials for Fine Pattering
EMC CEL seriesEMC film EB series
High resolutionDry film resist for Cu pillar
RDL DIF series
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
7
copy Hitachi Chemical Co Ltd 2014 All rights reserved
POP
25D-PKG
3D-PKG
eWLB
3D-eWLB
Si-IP
QFN
Integrated technology for newly PKG
Needs Ultra Low CTE
High themal conduction
LowεLow tanδ
High modulus
High adherence
Low warpage
Reliability
High radiation of heat
Electric performance
FC-BGA
Low End Middle range High End
Needs
Ultra fine line Low cost High speedBig volume
Integrated technology
Adherence Insulation Photosensitive
Process Evaluation
Low
Per
form
ance
hi
gh
New processmaterial Proposalfor harmonized field
8
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
9
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Pre-applied under Fill CEL-C UF series
3D PKG
25D PKG Good gap filling
Good connection Short cure bonding
Temporary bonding film XTM series
Easy debonding Heat resistance
Low warpage High insulation
Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series
Fine patterning
Good molding
CMP HS series High removal rate Good planarity
High resolution TrenchPhoto-via
TSV Related Materials
Underfill CEL-C series
High thermal Good adhesion
Thermally conductive film HS series
Materials for Fine Pattering
EMC CEL seriesEMC film EB series
High resolutionDry film resist for Cu pillar
RDL DIF series
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
8
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
9
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Pre-applied under Fill CEL-C UF series
3D PKG
25D PKG Good gap filling
Good connection Short cure bonding
Temporary bonding film XTM series
Easy debonding Heat resistance
Low warpage High insulation
Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series
Fine patterning
Good molding
CMP HS series High removal rate Good planarity
High resolution TrenchPhoto-via
TSV Related Materials
Underfill CEL-C series
High thermal Good adhesion
Thermally conductive film HS series
Materials for Fine Pattering
EMC CEL seriesEMC film EB series
High resolutionDry film resist for Cu pillar
RDL DIF series
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
9
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Pre-applied under Fill CEL-C UF series
3D PKG
25D PKG Good gap filling
Good connection Short cure bonding
Temporary bonding film XTM series
Easy debonding Heat resistance
Low warpage High insulation
Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series
Fine patterning
Good molding
CMP HS series High removal rate Good planarity
High resolution TrenchPhoto-via
TSV Related Materials
Underfill CEL-C series
High thermal Good adhesion
Thermally conductive film HS series
Materials for Fine Pattering
EMC CEL seriesEMC film EB series
High resolutionDry film resist for Cu pillar
RDL DIF series
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
10
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability
High density wiring layers
21D-PKG
Low Warpage reflowafter reflow
Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)
Required properties of 21D interposer
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
11
LS=33μm Ultra fine line
High resolution Photosensitive Film RYRD series
Ultra fine pitch primer AirFoil (flat surface)
Ultra Low CTE LaminateE-770G Mary(next generation)
Thinner seed copperNewly Copper treatment NFT(Nano copper treat)
Integrated Technology
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
12
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2013 All rights reserved
13
Year
2005 2010 2015
CTE
ppm
ordmC
15
10
5
0
E-700G(R)
E-705G(L)
E-705G(LH)
E-679GT
E-679FG E glass S glass S HD glass Q glassOrganic
gt35GPa gt50GPagt50GPa
20142013
E-800G(L)
Ultra Low CTE Core Materials
E-770G(LH)
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
14
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Scharpery formula (Approximate formula of CTE)
Molecular design of new resin systemCTE formula for ultra low CTE material
CTE(material)≒ErVr + EgVg + EfVf
arErVr + agEgVg + afEfVf
- Er rArr 0
- arrArr 0
- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)
Low CTE resinLow CTE resin
Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass
Low elastic modulus Low elastic modulus
a CTEV Volume ratioE Modulusr Resing Glass clothf Filler
CTE(material) rArr Smaller
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2013 All rights reserved
15
The relationship between Resin shrinkage and Warpage (PKG)
Decreasing of resin shrinkageWarpage reduction
Warpage reduced by decreasing of resin shrinkage even in same CTE value
Substrate
Die mount
(RT260oCRT)
After mount
0
20
40
6080
020 025 030 035 040Resin shrinkage()
War
page
(PK
G) (
mm
)
(33)(34)
(35)(33)
( )CTE (ppm
Study of Resin shrinkage
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
16
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Hard segment (New rigid matrix)
Soft segment (New low elastic matrix)
3 Molecular design of new resin system(4)Molecular design of new resin
Ultra low CTELow shrinkageUltra low CTELow shrinkage
Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
17
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property
Aggregation
Filler
Original coupling agentGood dispersion (no aggregation)
FICS
Low CTEImprovement in properties
Low CTEImprovement in properties
Poor dispersion of fillerEnabling higher filler content
3 Molecular design of new resin system(5)Close packing of filler
Conventional
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
18
copy Hitachi Chemical Co Ltd 2012 All rights reserved
High Density Glass cloth3 Core Prepreg Portfolio
2116 ( 100m standard type)Fabric count 59 x 57 inch
2118 ( 100m HD type)Fabric count 65 x 62 inch
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
19
copy Hitachi Chemical Co Ltd 2013 All rights reserved
4 General properties of new ultra low CTE material(2)General properties
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
20
copy Hitachi Chemical Co Ltd 2013 All rights reserved
30 oC 270 oC
Shrinkage
Heating
Cooling
Temperature
Dim
ensi
on C
hang
e
30 oC 260 oC 260 oC 30 oC
Heating process Cooling process
5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage
Assembly process
WarpageWarpageTMA mesurment of core material
The Mismatch of CTE between core material and chipin the cooling process
The Mismatch of CTE between core material and chipin the cooling process
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
21
copy Hitachi Chemical Co Ltd 2013 All rights reserved
5 Influence of resin shrinkage(2)Measurement result of the shrinkage
Resin shrinkage ()
Cor
e sh
rinka
ge (
)
Core shrinkage ()
CTE
inco
olin
g pr
oces
s(pp
mo C
)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage
The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process
CTE of 18 ppmoCin heating process
The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core
The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
22
copy Hitachi Chemical Co Ltd 2014 All rights reserved
6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)
Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m
Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m
Underfill
Chip
substrate
Overview Cross section
Chip
Underfill
Bump
Solder resist
Cu
CuCore
Prepreg
Dimensions
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
23
copy Hitachi Chemical Co Ltd 2013 All rights reserved
Shadow-moire measurement system
Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s
Camera
Chamber
Reference grating
Light Analyzer
ChipSubstrate
Shadow moire image(Interference pattern)
Imageanalysis
Analysis result
6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)
Overview of Shadow-Moire measurement system
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
24
copy Hitachi Chemical Co Ltd 2013 All rights reserved
6 Warpage property of thinner PKG substrate(3) Measurement result of warpage
Measurement result of PKG substrate(Ball area warpage)
Lowest warpage
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
25
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Warpage Evaluation
Underfill
Chip
substrate
Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper
MCL-E-770G MCL-E-705G MCL-E-700G(R)
Warpage mode
Convex
Concave
Room Temp(Start)
Reflow Temp
Room Temp(after reflow)
As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
26
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Contents
1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology
4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates
5 Conclusion
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
28
PF Profile-free Cu Foil with resin (Hitachi-chemical)
LP Low Profile Cu Foil
Conventionalfilm
LS (microm)
PF-E-12SAPP (Primer)
Conventional LP Cu foil
404035353030252520201515101055
100microm100microm100microm
SAP
01
02
03
04
05
06 M-SAP Subtra
PF-E series (Priner)PF-E-3
PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R
a (micro
m)
Air Foil (Primer)
Fine line fabrication of glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
29
Item Glass-cloth prepreg Insulating film
Low CTE good poor
Low warpage good poor
High density wiring(by semi-additive process) difficult possible
Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage
Advantage of applying glass-cloth prepreg for Build up material
Advantage of applying glass-cloth prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
30Product formation of Airfoil
Carrier film (Organic film)
Prepreg
Core
For multilayer
Airfoil
Primer
Conventional core material
For core material
Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
31
PrepregCore
Semi-AdditiveProcess
X functional group of interaction with Cu
Higher peel strength on smooth surface
Application Core Prepreg Film
XX XX X Plated copperPrimer
XX XX X
[High adhesive energy material](Chemical bonding)
Primer
Technology concept of Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
32
Peel strength Surface roughness
Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech
Peel strength of Air Foil
Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties
0
02
04
06
08
1 2 3 4 5
Peel
str
engt
h (k
Nm
)
0
02
04
06
08
1 2 3 4 5
Surf
ace
roug
hnes
s (μ
m)
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
679FG(R)+Air Foil
679GT+Air Foil
700G(R)+Air Foil
705G+Air Foil
800G+Air Foil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
33
Item Unit Airfoil PF-ELPrimer
Thickness microm 25 2 or 38
Carrier -
Organic Film LP copper
SurfaceFormation
Method
-
Desmearing Replica of copper
Ra microm 005-008 030-040
Peel kNm 07-08 07-09
LS microm lt 55 1010
Laser formability - excellent good
Airfoil properties and spec
10 μm 10 μm
10 μm 10 μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
34Surface flatness of Airfoil
Carrier Non profile copper foil Carrier Organic film
Airfoil (film carrier) can reduce uneven of surface
EquipmentWyko NT9100
Waves from copper foil Unevenness of surface increases
Surface roughness of Airfoil on substrate after carrier removal
Ra = 002-005 micromRa = 01-02 microm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
35
Item Airfoil PF-EL
Ra (microm) 009 038
Peel strength(kNm) 076 079
Surface image(After desmear)
Cross-sectionimage
(After plating)
Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min
Surface roughness of the Airfoil after desmear is lt 01 microm
5 μm5 μm
Plating copper
PF-EL
PrepregPrepreg
Plating copper
Air Foil
Surface roughness and plating property
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
Resistance of seed layer
E-700G(R) + Airfoil
86 mmwidth
200 μm
Desmear rarr Eless-plating
PatterningR
esis
tanc
e m
easu
rem
ent
Seed layer
Evaluating method
Adhesive property of pattern plating copper
Res
ista
nce
(Ω)
Thickness of seed layer (μm)
Airfoil shows good adhesive property of pattern plating copper
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
AirFoil is available for thin seed layer less than 02um
Current Film material
Air Foil
Material Seed layer007μm Seed layer014μm
Electroless copper (seed layer) fixing property
20μm
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
38
Design Surface photograph Cross section
73μm
100 μm 10 μm
DFR RY-5319
W293 μm
10 μm
DFR formation with Airfoil
3 μm width of DFR line on the E-less copper is successfully fabricated
Resist formability of Airfoil with E-700G(R)
DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm
sharpcut filter 100 mJcm2
Development 1 Na2CO3 30 ordmC 18 s
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2013 All rights reserved
39
Surface photograph
Prepreg
Core Airfoil50 microm 50 microm
Airfoil
Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm
Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319
Fine circuit formation with Airfoil
Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm
Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)
Cross section
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
40HAST results with SR (FZ-2700GA)
FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)
Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V
Linespace = 55 microm Line thickness5 micromAirfoil
Structure
Insu
latio
n re
sist
ance
(ohm
)
Time (hr)
Hast test with SR (FZ-2700GA) shows good results
LS=55 μm
evaluation still ongoing up to 300hr
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
41
Transmission loss in micro strip-line structurewith fine patterning material
< Measurement Conditions > Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068~0082 mmTrace thickness 20 μmDielectric thickness 40 μm
Copper foil or Plating Cu
Pattern for Proofreading
Pattern for S21
Prepreg (GEA-700G(R)) w or wo primer
Core(E-700G(R))
Transmission linefor measurement
Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)
Standard foil
PF-EL-12SAPP
Airfoil
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
New copper surface treatment technology For next generation package substrates
NFT Nano Fractal Treatment
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
Application of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 43
Package substrate
NFT has the high-resolution of the DFR and high adhesion of the wiring
Core
Build-up material
Solder resist (SR)
Multilayer board
NFT
Inner layer Resinrarr Inner layer treatments
Chemical treatment(Etching)
Black-oxide treatment
Cu layer(DFR Seed- layer)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved 44
CuO
Cu
Oxidation
Precious metal
Dissolution of CuO (acid treatment)This step microscopic indentation is formed
Dry treatment
Activation
This step thin CuO film is formed
1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good
Features amp Process flow of NFT
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
Conventional treatment New treatment
Etching Oxi-Red NFT
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 45
10 μm
SEM image (times5K times100K)1) Surface shape of copper
The surface of NFT is very flat shape
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
Conventional treatment New treatment
Etching(20 - 30 μm)
Oxi-Red(05 - 07 μm)
NFT(004 - 006 μm)
Characteristic of NFT
copy Hitachi Chemical Co Ltd 2014 All rights reserved 46
1 μm
SIM image used with FIB (45ordm)
(Surface roughness Rz)
2) Cross-section of copper
NFT of surface roughness (Rz) is less than 01 um
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
Formation of seed layer
Thickness of seed layer is 05 μm
AS-Z3Air Foil
DFR RY5319 46
9
5
8
Etching of seed layer
Cu
19(Unit μm)
copy Hitachi Chemical Co Ltd 2014 All rights reserved 47
Pattern formation of DFR
(Unit μm)
Pattern plating
Wiring formation example of 55um
The precision of the fine pattern is good
(Unit μm)
Item AS-Z3 AirfoilRa (μm) 015 008
Surface
Cross-section(FIB)
Width height(μm) 4785 5797
50 μm 50 μm
5 μm 5 μm
Characteristic of NFT
W W
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved 48
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved 49
1) L 3 μm S 3 μm H 4 μm
L 29 μm
H 45 μm
50 μm 10 μm
Ultra Fine Line formation
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Ultra Low Loss(Df) material- MCL-LW-900G -
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
51
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Item ConditionsE-705G E-770G LW-900G
705G 705G(LH) 770G 770G(LH) 900G 900G(LH)
PrepregGlass Style 1037 1030 1037 1030 1037 1030
Resin Content() 73 69 72 67 72 65
Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass
Weave density Std HD Std HD Std HD
Dk(SPDR)
1GHz 39 41 38 40 34 33
10GHz 38 40 38 39 33 33
Df(SPDR)
1GHz 0008 0008 0007 0007 0004 0004
10GHz 0012 0012 0009 0009 0005 0005
Tg DMA oC 300 300 310 310 260 260
CTE (pull) a1 (XY)ppmC
110 58 65 52 194 93
a2 (XY) 25 25 25 25 60 20
Young Modulus A GPa 220 241 219 233 124 165
Hitachi Low DkDf PrepregPPG thickness 50m
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
52
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
30
31
32
33
34
35
36
37
38
0 10 20 30 40 50 60 70
Dk
Frequency (GHz)
0
0002
0004
0006
0008
0010
0012
0 10 20 30 40 50 60 70
Df
Frequency (GHz)
Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)
LW-900G(LH) Prepreg (1030N65S-Glass)
Hitachi Low DkDf PPG
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
copy Hitachi Chemical Co Ltd 2014 All rights reserved 53
5Conclusion
1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG
2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material
3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production
54
copy Hitachi Chemical Co Ltd 2014 All rights reserved
Thank you for your attentionThank you for your attention
The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production