Dated : 22/08/2003

SEMTECH ELECTRONICS LTD.(Subsidiary of Semtech International Holdings Limited, acompany

listed on the Hong Kong Stock Exchange, Stock Code: 724) ®

MMBTSB624LT1

PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications

The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.

SOT-23 Plastic Package

Absolute Maximum Ratings (Ta = 25 oC)

Symbol Value Unit

Collector Base Voltage -VCBO 30 V

Collector Emitter Voltage -VCEO 25 V

Emitter Base Voltage -VEBO 5 V

Collector Current -IC 700 mA

Power Dissipation Ptot 200 mW

Junction Temperature Tj 150 OC

Storage Temperature Range TS -55 to +150 OC

G S P FORM A IS AVAILABLE

Dated : 22/08/2003

SEMTECH ELECTRONICS LTD.(Subsidiary of Semtech International Holdings Limited, acompany

listed on the Hong Kong Stock Exchange, Stock Code: 724) ®

MMBTSB624LT1

Characteristics at Tamb=25 oC

Symbol Min. Typ. Max. Unit DC Current Gain at -VCE=1V, -IC=100mA at -VCE=1V, -IC=700mA

BV1 BV2 BV3 BV4 BV5

hFE

hFE

hFE

hFE hFE

hFE*

110 135 170 200 250 50

- - - - - -

180 220 270 320 400

-

- - - - - -

Collector Cutoff Current at -VCB=30V -ICBO - - 100 nA

Emitter Cutoff Current at -VEB=5V -IEBO - - 100 nA

Collector Saturation Voltage* at -IC=700mA, -IB=70mA -VCE(sat) - - 0.6 V

Base Emitter On Voltage* at -VCE=6V , -IC=10mA -VBE(on) 0.6 - 0.7 V

Output Capacitance at -VCB=6V, f=1MHz Cob - 17 - pF

Transition Frequency at -VCE=6V, -IC=10mA fT - 160 - MHz

*Pulsed PW≦350µs, Duty Cycle≦2%

G S P FORM A IS AVAILABLE