BTS5016-1EKB SPICE Model

Part number: BTS5016-1EKBDraft V.1

Smart High-Side Power Switch

Copyright (C) Bee Technologies Inc. 2012 1

INDEX

• Block Diagram

• Characteristics

– INput-Pin

– DEN-Pin

– Ron (ON-state resistance)

– Turn ON/OFF

• Application Circuit


Block Diagram

• The power transistor is built by an N-channel power MOSFET


N-channel power MOSFET

INput channel; Input signal for

channel activation

Voltage Supply; Battery voltage

Diagnostic Enable; Digital signal to enable/disable

OUTput

GrouND; Ground connection

Sense; Sense current of the

selected channel

Characteristics

• INput-Pin

• DEN-Pin

• Ron (ON-state resistance)

• Turn ON/OFF


INput-Pin(1/3)

C 11 0 0 nI C = 0

R I S1 . 2 k

V 1

TD = 0TF = 1 s

P W = 1 0 nP E R = 2 s

V 1 = 0 V

TR = 1 s

V 2 = 5 VR L2

O U T

R I N

4 . 7 k

I N

R D E N

4 . 7 k

D E N

G N D

R P D4 . 7 k

C 21 0 0 pI C = 0

V B A T

V S1 3 . 5 V

V B A T

0

0

R I S O

1 G

U 1 B TS 5 0 1 6

I N1

D E N2

G N D3

V S4

O U T5

I S6

TA M B7

R G N D1 k

D 1D m o d

O U T

V D E N0 V

V-

V+

V-

V+

• Test Condition: VS=13.5V and RL=2• Analysis Type: Transient

• Simulation result and Comparison table show in next page


INput-Pin(2/3)


INput-Pin(3/3)


Measurement Simulation %Error

VIN(L) (V) 0.800[Max] 1.470 83.76

VIN(H) (V) 2.000[Min] 1.608 -19.60

VIN(HYS) (mV) 250.000 201.017 -19.59

• Comparison Table

DEN-Pin(1/3)

C 11 0 0 nI C = 0

R I S1 . 2 k

R L2

O U T

I NR I N

4 . 7 k

R D E N

4 . 7 k

D E N

G N D

R P D4 . 7 k

C 21 0 0 pI C = 0

V B A T

V S1 3 . 5 V

V B A T

0

0

R I S O

1 G

U 1 B TS 5 0 1 6

I N1

D E N2

G N D3

V S4

O U T5

I S6

TA M B7

R G N D1 k

D 1D m o d

O U T

V I N5 V

V D E N

TD = 0TF = 1 s

P W = 1 0 nP E R = 2 s

V 1 = 0 V

TR = 1 s

V 2 = 5 V

V-

V+

V-

V+




DEN-Pin(2/3)


DEN-Pin(3/3)



VDEN(L) (V) 0.800[Max] 3.392 324.00

VDEN(H) (V) 2.000[Min] 3.593 79.65

VDEN(HYS) (mV) 250.000 200.896 -19.64


Ron (ON-state resistance)(1/3)

• Test Condition: IL=10A, VIN=4.5V and VS=13.5V

• Analysis Type: Transient



R G N D1 k

D 1D M O D

O U T

U 1 B TS 5 0 1 6

I N1

D E N2

G N D3

V S4

O U T5

I S6

TA M B7

R 31 . 2 k

I NR I N

4 . 7 k R D E N

4 . 7 k

D E N

0

V B A T

V S1 3 . 5 V

G N D

V B A T

I L1 0 A

R I S O

1 G

V I N4 . 5 V

V D E N0 V

0

Ron=(VS-VOUT)/IL

Ron=(VS-VOUT)/IL




RDS(on)[m] 16.000 16.003 0.02


Turn ON/OFF(1/4)

C 11 0 0 nI C = 0

R I S1 . 2 k

V 1

TD = 0 . 0 5 mTF = 1 0 u

P W = 0 . 6 mP E R = 1 m

V 1 = 0 V

TR = 1 0 u

V 2 = 5 VR L2

O U T

R I N

4 . 7 k

I N

R D E N

4 . 7 k

D E N

G N D

R P D4 . 7 k

C 21 0 0 pI C = 0

V B A T

V S1 3 . 5 V

V B A T

0

0

R I S O

1 G

U 1 B TS 5 0 1 6

I N1

D E N2

G N D3

V S4

O U T5

I S6

TA M B7

R G N D1 k

D 1D m o d

O U T

V D E N0 V




VOUTVOUT

VINVIN


Turn ON/OFF(2/4)

VINVIN

VOUTVOUT

Turn ON/OFF(3/4)

• Figure 9 Switching a Resistive Load Timing (Page 15 from data sheet)


Time

1.0ms 1.2ms 1.4ms 1.6ms 1.8ms 2.0msV(OUT,GND)

-5V

0V

5V

10V

15V

20VV(IN,0)

-2.0V

2.0V

4.0V

6.0V

8.0V

SEL>>

Turn ON/OFF(4/4)



dV/dton(V/us) 0.250 0.255 2.00

dV/dtoff(V/us) 0.250 0.247 -1.20

∆dV/dt(V/us) 0.000 0.008 -

ton (us) 100.000 89.842 -10.16

toFF (us) 100.000 104.194 4.19

∆tsw (us) -10.000 14.352 -

ton_delay (us) 60.000 36.525 -39.13

toff_delay (us) 60.000 53.778 -10.37


BTS5016-1EKB SPICE Model

Engineering

Transcript of BTS5016-1EKB SPICE Model