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HITFETBSP 75

Smart Lowside Power Switch

FeaturesLogic Level InputInput protection (ESD)

Thermal shutdown (with restart)Overload protectionShort circuit protectionOvervoltage protectionCurrent limitation

ApplicationAll kinds of resistive, inductive and capacitive loads in switching applicationsC compatible power switch for 12 V and 24 V DC applicationsReplaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart PowerTechnology. Fully protected by embedded protection functions.

protection

Overvoltage

Drain

IN

ESD

HITFET

Source

1

3

Over-

protection

temperature Short circuit

protection

+

limitation

Vbb

Short circuitprotection

LOAD

2

dv/dt

limitation

4

M

Current

Pin Symbol Function

1 IN Input

2 DRAIN Output to the load

3 SOURCE Ground

TAB SUBSTRATE Must be connected to Pin 3

Product Summary

Continuous drain source voltage VDS 55 VOn-state resistance RDS(ON) 550 m

Current limitation ID(lim) 1 ANominal load current ID(Nom) 0.7 AClamping energy EAS 550 mJ

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Maximum Ratings at Tj=25C unless otherwise specified

Parameter Symbol Values Unit

Continuous drain source voltage (overvoltage protection see page 4)

VDS 55 V

Drain source voltage for short circuit protection

VDS 32 V

Load dump protectionVLoadDump=UP+US; UP=13.5 V

RI1)=2 ; td=400ms; IN=low or high (8V) RL=50

RI=2 ; td=400ms; IN=high (8V) RL=22

VLoadDump2)

80

47

V

Continuous input voltage VIN -0.2 ... +10 V

Peak input voltage VIN -0.2 ... +20 V

Operating temperature range

Storage temperature range

Tj

Tstg

-40 ...+150

-55 ...+150

C

Power dissipation (DC) Ptot 1.8 WUnclamped single pulse inductive energy

ID(ISO)= 0.7 A

EAS 550 mJ

Electrostatic discharge voltage (Human Body Model)

according to MIL STD 883D, method 3015.7 andEOS/ESD assn. standard S5.1 - 1993

VESD 4000 V

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 40/150/56

Thermal resistance junction soldering point:

junction - ambient3):

RthJS

RthJA

10

70

K/W

1)RI=internal resistance of the load dump test pulse generator LD2002) VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839.

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Electrical Characteristics

Parameter and Conditions Symbol Values Unitat Tj= 25 C, unless otherwise specified min typ max

Static CharacteristicsDrain source clamp voltage ID= 10 mA Tj=-40...+150C:

VDS(AZ) 55 -- 70 V

Off state drain current

VIN= 0 V, VDS= 32 V Tj=-40...+150C:

IDSS -- -- 5 A

Input threshold voltage ID= 10 mA VIN(th) 2 2.5 3 V

Input current normal operation, ID

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Parameter and Conditions Symbol Values Unitat Tj= 25 C, unless otherwise specified min typ max

Protection Functions

Thermal overload trip temperature Tjt 150 165 -- C

Thermal hysteresis Tjt -- 10 -- K

Unclamped single pulse inductive energy

ID(ISO)=0.7 A, Vbb=32 V T =25 C

T =150 C

EAS 550

200

--

--

--

--

mJ

Inverse DiodeContinuous source drain voltage

VIN= 0 V, -ID= 2*0.7 A

VSD -- 1 -- V

Circuit Description

The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic levelinput, an open drain DMOS output stage and integrated protection functions. It is designedfor all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial ap-plications.

Protection functions

Overvoltage protection: An internal clamp limits the output voltage at VDS(AZ) (about63 V) when inductive loads are switched off.

Current limitation:By means of an internal current measurement the drain current is lim-

ited at ID(lim)(1.4 - 1.5 A typ.). If the current limitation is active the device operates in thelinear region, so power dissipation may exceed the capability of the heatsink. This opera-tion leads to an increasing junction temperature until the overtemperature threshold isreached.

Overtemperature and short circuit protection: This protection is based on sensing thechip temperature. The location of the sensor ensures a fast and accurate junction tem-perature detection. Overtemperature shutdown occurs at minimum 150 C. A hysteresis oftyp. 10 K enables an automatical restart by cooling.

The device is ESD protected according Human Body Model (4 kV) and load dump protected(see Maximum Ratings).

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Block diagram

Terms

HITFET

IND

VIN

ID VDS1

IIN

S

Vbb

RL

2

3

Input circuit (ESD protection)

IN

ESD-ZD I

Source

ESD zener diodes are not designed for DC

current.

Inductive and overvoltage output clamp

HITFET

VZ D

S

VIN

t

VDS

VBB

VDS(AZ)

Turn on into overload or short circuit

VIN

t

ID

ID(lim)

Shut down by overtemperature and restart bycooling. Current internally limited at ID(lim).

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Maximum allowable power dissipationPtot= f (TC)

Ptot[W]

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

0 25 50 75 100 125 150

TC [C]

On-state resistanceRON= f (Tj); ID= 0.7 A; VIN= 5 V

RON [m]

0

200

400

600

800

1000

1200

1400

-50 -25 0 25 50 75 100 125 150

m a x.

ty p .

Tj [C]

On-state resistanceRON= f (Tj); ID= 0.7 A; VIN= 10 V

RON [m]

0

100

200

300

400

500

600

700

800

900

1000

-50 -25 0 25 50 75 100 125 150

m a x.

ty p .

Tj [C]

Typ. input threshold voltageVIN(th)= f (Tj); ID= 10 mA; VDS= 12 V

VIN(th) [V]

0

0.5

1

1.5

2

2.5

3

-50 -25 0 25 50 75 100 125 150

Tj [C]

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Typ. on-state resistanceRON = f (VIN) ID= 0.7 A; Tj= 25C

RON [m]

0

500

1000

1500

2000

0 2 4 6 8 1 0

VIN [V]

Typ. short circuit currentID(SC) = f (VIN); VDS=12V, Tj= 25C

ID(SC) [A]

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0 2 4 6 8 1 0

VIN [V]

Typ. current limitationID(lim) = f (Tj); VDS=12V, VIN= 10V

ID(lim) [A]

1

1.1

1.2

1.3

1.4

1.5

-50 -25 0 25 50 75 100 125 150

Tj [C]

Transient thermal impendanceZthJC = f (tp)Parameter: D=tp/T

ZthJC [K/W]

1E-2

1E-1

1E+0

1E+1

1E+2

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

0

0.005

0.01

0.02

0. 5

0. 2

0. 1

0.05

T

tp

t

P tot

D=

tp [s]

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Application examples:

Status signal of thermal shutdown by monitoring

input current

D

S

IN

C VbbHITFETV

IN

RSt

VIN

thermal shutdown

V

C

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Package and ordering code

all dimensions in mm

SOT223/4 Ordering code

BSP75 Q67060-S7200-A2

Definition of soldering point with temperature Ts:upper side of solder edge of device pin 4.

Pin 4

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This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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