bsm180d12p2c101

8/13/2019 bsm180d12p2c101

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SiC Power ModuleBSM180D12P2C101

Application Circuit diagram

Motor drive

Inverter, Converter

Photovoltaics, wind power generation.

Induction heating equipment.

Features

1) Low surge, low switching loss.

2) High-speed switching possible.

3) Reduced temperature dependence.

Construction

This product is a half bridge module consisting of SiC-DMOS from ROHM.

lDimensions & Pin layout (Unit : mm)

5 6 7 8 9 1 0

4

3

*Do not connnect to NC pin.

1

3,4

2

1098(N.C)

567(N.C)

(M2.6 FOR SELF-TAPPINGSCREW)

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BSM180D12P2C101

lAbsolute maximum ratings (Tj = 25°C)

Symbol Unit

VDSS G-S short V

V

V

ID DC(Tc=60°C) AIDRM Pulse (Tc=60°C) 1ms *

2 A

IS Tc=60°C A

A

A

Total power disspation *4 Ptot Tc=25°C W

Tj °C

Tstg °C

Main Terminals : M6 screw N · m

N · m

(*1) Measurement of Tc is to be done at the point just under the chip.

(*2) Repetition rate should be kept within the range where temperature rise of die should not exceed Tj max.

(*4) Tj is less than 150°C (*5) Actual measurement is 3000Vrms/1sec. in accordance with UL1557.

lElectrical characteristics (Tj=25°C)

Symbol Min. Typ. Max. Unit

Tj=25°C － 2.3 3.2 V

Tj=125°C － 3.3 4.4 V

IDSS － - 10 m A

Tj=25°C － 5.4 －

Tj=125°C － 5.1 －

Tj=25°C － 2.3 －

Tj=125°C － 3.3 －

VGS(th) 1.6 2.7 4.0 V

－－ 0.5 m A

-0.5 －－ m A

td(on) －

80 －

nstr － 90 － ns

trr － 50 － ns

td(off) － 300 － ns

tr － 90 － ns

Ciss VDS=10V, VGS=0V, f=1MHz － 23 － nF

Internal gate resistor RGint Tj=25°C - 1.15 - W

(*6) Measurement of Tc is to be done at the point just beneath the chip.

(*7) Typical value is measured by using thermally conductive grease of l=0.9W / (m · K).

°C/WCase-to-heat sink

Thermal resistanceRth(c-f)

Case to heat sink, per 1 module,

Thermal grease appied *7

Mounting to heat shink : M5 screw

- 0.035 -

-

0.11 °C/W

VGS(on)=18V, VGS(off)=0VVDS=600V

ID=180A

RG=5.6W

inductive load

Switching characteristics

VGS=22V, VDS=0V

VGS= -6V, VDS=0V

Junction-to-case thermal

resistance

360

180

360

Limit

1200

22

-6

180

360

1130

-40 to150

-40 to125

2500VisolTerminals to baseplate,

f=60Hz AC 1min.

Conditions

Source current *1

Storage temperature

VGSS D-S short

Junction temperature

Drain current *1

Parameter

Drain-source voltage

Gate-source voltage(+)

Gate-source voltage(-)

ISRM*2*3

Pulse (Tc=60°C) 1ms VGS=18V

Pulse (Tc=60°C) 10ms VGS=0V

Mounting torque

Isolation voltage*5

V

Input capacitance

Gate-source leakage current IGSS

(*3) Duration of current conduction at gate-off state should not exceed 10msec.

Parameter

Drain cutoff current

Gate-source threshold voltage

Static drain-source on-state

voltage

Source-drain voltage

Rth(j-c) DMOS (1/2 module) *6

Vrms

4.5

3.5

VDS(on)

－－

VGS=18V, IS=180A

VSD

Conditions

IC=180A, VGS=18V

VDS=1200V, VGS=0V

VGS=0V, IS=180A

VDS=10V, ID=35.2mA

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BSM180D12P2C101

Waveform for switching test

Eon = ID× V DSEoff = I D× V DS

VDS

ID

VGS

10%

10% 2%

90%

trr

10% 2% 2%

10% 2%

90%

td (on) tr tf td (off)

Vsurge

90%

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BSM180D12P2C101

Electrical characteristic curves (Typical)

0

1

2

3

4

5

6

7

8

0 100 200 300 400

Tj=125ºC

VGS =18V

Tj=25ºC

0

1

2

3

4

5

6

7

8

9

10

10 15 20 25

ID=180A

Tj=25ºC

ID=120A

ID=80A

ID=40A

1

10

100

1000

0 2 4 6

Tj=125ºC

Tj=125ºC

Tj=25ºC

Tj=25ºC

VGS =0VVGS =18V

0

50

100

150

200

250

300

350

400

0 2 4 6 8

Tj=25ºCVGS =16V

VGS =18V

VGS =20V

VGS =14V

VGS =12VV

GS =10V

VGS =6V VGS =8V

Fig.1 Typical Output Characteristics

D

r a i n C u r r e n t : I D

[ A ]

Drain-Source Voltage : VDS [V]

Fig.2 Drain-Source Voltage vs. Drain Current

D r a i n

- S o u r c e V o l t a g e : V D S

[ V ]

Drain Current : ID [A]

Fig.3 Drain-Source Voltage vs.Gate-Source Voltage

D r a i n - S o

u r c e V o l t a g e : V D S

[ V ]

Gate-Source Voltage : VGS [V]

Fig.4 Forward characteristic of Diode

S o u r c

e C u r r e n t : I s

[ A ]

Source-Drain Voltage : VSD [V]

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BSM180D12P2C101


1

10

100

1000

0 100 200 300 400

td(off)

tr

td(on)

VDS =600V

VGS(on) =18VVGS(off) =0V

RG =5.6 W

Inductive Load

tf

1

10

100

1000

0 100 200 300 400

VDS

=600VVGS(on) =18VVGS(off) =0V

RG =5.6 W Inductive Load

tf

td(off)tr

td(on)

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

0 1 2 3 4

Tj=25ºC

Tj=125ºC

VDS =10V

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0 1 2 3 4

Tj=25ºC

Tj=125ºC

VDS =10V


Fig.5 Drain Current vs. Gate-Source Voltage

D r a i n C u r r e n t : I D

[ A ]

Fig.6 Drain Current vs. Gate-Source Voltage

D r a i n C u r r e n t : I D

[ A ]



Fig.7 Switching Characteristics [ Tj=25ºC ]

S w i t c

h i n g T i m e : t [ n s ]

Fig.8 Switching Characteristics [ Tj=125ºC ]

S w i t c h i n g T i m e : t [ n s ]


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BSM180D12P2C101


0

5

10

15

20

25

30

0 100 200 300 400

Eon

VDS =600VVGS(on) =18VVGS(off) =0V


Eoff

Err

0

5

10

15

20

25

30

0 100 200 300 400

Eon

Eoff

Err



1

10

100

1000

1

10

100

1000

0 100 200 300 400

trr

Irr



1

10

100

1000

1

10

100

1000

0 100 200 300 400

trr

VDS

=600VVGS(on) =18VVGS(off) =0V


Irr

Fig.10 Switching Loss vs. Drain Current[ Tj=125ºC ]

Fig.9 Switching Loss vs. Drain Current[ Tj=25ºC ]

S w i t c h i n g L o s s

[ m J ]



[ m J ]


R e c o v

e r y C u r r e n t : I r r [ A ]

Fig.12 Recovery Characteristics vs.Drain Current [ Tj=125ºC ]

R e c o v

e r y C u r r e n t : I r r [ A ]

R e c o v

e r y T i m e : t r r [ n s ]

Fig.11 Recovery Characteristics vs.

Drain Current [ Tj=25ºC ]

Drain Current : ID [A] Drain Current : ID [A]

R e c o v e r y T i m e : t r r [ n s ]

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BSM180D12P2C101


10

100

1000

10000

1 10 100

td(off)

td(on)

VDS =600VID =180AVGS(on) =18VVGS(off) =0VInductive Load

tf

tr

10

100

1000

10000

1 10 100

VDS =600VID =180AVGS(on) =18VVGS(off) =0VInductive Load

td(off)

td(on)

tr

tf

0

2

46

8

10

12

14

16

18

20

1 10 100

VDS =600V

ID =180AVGS(on) =18VVGS(off) =0VInductive Load

EonEoff

Err

0

2

4

6

8

10

12

14

16

18

20

1 10 100

VDS =600V

ID =180AVGS(on) =18VVGS(off) =0VInductive Load

EonEoff

Err

Gate Resistance : RG [ W]Gate Resistance : RG [ W]

Fig.13 Switching Characteristics vs. GateResistance [ Tj=25ºC ]


Fig.14 Switching Characteristics vs. GateResistance [ Tj=125ºC ]


Fig.15 Switching Loss vs. Gate Resistance

[ Tj=25ºC ]

S w i t

c h i n g L o s s

[ m J ]

Gate Resistance : RG [ W]

Fig.16 Switching Loss vs. Gate Resistance

[ Tj=125ºC ]


[ m J ]

Gate Resistance : RG [ W]

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