BSM180C12P2E202 : SiC Power...

www.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

DatasheetSiC Power Module

BSM180C12P2E202

Application Circuit diagramConverter

Photovoltaics, wind power generation.

Induction heating equipment.

Features1) Low surge, low switching loss.

2) High-speed switching possible.

3) Reduced temperature dependence.

ConstructionThis product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

Dimensions & Pin layout (Unit : mm)

1/10 2017.11 - Rev.A


DatasheetBSM180C12P2E202

Absolute maximum ratings (Tj = 25°C)

Symbol UnitVDSS G-S short

Repetitive reverse voltage VDSS Clamp diode

G - S Voltage (tsurge<300nsec) VGSS_surge D-S shortID DC (Tc=60°C)

IDRM Pulse (Tc=60°C) 1ms　*2

IDRM Pulse (Tc=60°C) 10us　*2 *3

IS DC (Tc=60°C ) VGS=18VISRM

ISRM

IF DC (Tc=60°C )IFRM

IFRM

Total power dissipation *3 Ptot Tc=25°C WMax Junction Temperature Tjmax

Tjop

Tstg

Main Terminals : M6 screw

(*1) Case temperature (Tc) is defined on the surface of base plate just under the chips.(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tj max.

(*3) Please use an appropriate external gate resistor not to exceed maximum ratings of Drain - Source Voltage. (*4) Tj is less than 175°C

Example of acceptable VGS waveform

204

Pulse (Tc=60°C) 1ms *2 360

Pulse (Tc=60°C) 10us *2 *3 540

Conditions

360

Limit1200

22

6

20410 to 26

1200

ParameterDrain-source voltage

Gate-source voltage()Gate-source voltage()

Operating junction temperature

Drain current *1

Forward current (clamp diode) *1

Source current *1

VGSS D-S short

Mounting torque

Isolation voltage

Mounting to heat shink : M5 screw

Storage temperature

Pulse (Tc=60°C) 1ms VGS=18V　*2

VisolTerminals to baseplate, f=60Hz AC 1min.

Pulse (Tc=60°C) 10us VGS=18V　*2 *3

V

175°C

N · m

Vrms

4.53.5

1360

40 to15040 to125

2500

360

540204

540A

26V

0V

6V

10V

22Vtsurge

tsurge

2/10 2017.11 - Rev.A



Electrical characteristics (Tj=25°C)

Symbol Min. Typ. Max. UnitTj=25°C － 2.2 3.2

Tj=125°C － 3.1 －Tj=150°C － 3.5 5.0

IDSS － - 10 ATj=25°C － 1.6 2.2

Tj=125°C 2.0 -Tj=150°C － 2.2 3.3

IRRM - - 3.2 mAVGS(th) 1.6 - 4 V

－－ 0.5

0.5 －－td(on) － 49 －

tr － 36 －trr － 20 －

td(off) － 139 －tf － 32 －

Ciss VDS=10V, VGS=0V, 200kHz － 20 － nF

Gate Registance RGint Tj=25°C - 1.2 - NTC Rated Resistance R25 5.0 kNTC B Value B50/25 3370 K

Stray Inductance Ls 13.0 - nH

Terminal to heat sink 14.5 - mm

Terminal to terminal 15.0 - mm

Terminal to heat sink 12.0 - mm

Terminal to terminal 9.0 - mm

DMOSFET (1/2 module) *5 －－ 0.11

SBD (1/2 module) *5 －－ 0.14

(*5) Measurement of Tc is to be done at the point just beneath the chip.

(*6) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K).

(*7) If the Product is used beyond absolute maximum ratings defined in the Specifications,

as its internal structure may be damaged, please replace such Product with a new one.

Waveform for switching test

Rth(c-f)

Parameter Conditions

On-state staticDrain-Source Voltage

VDS(on) ID=180A, VGS=18V V

A

ns

Forward Voltage VF V

Reverse current Clamp diodeGate-Source Threshold Voltage VDS=10V, ID=35.2mA

Gate-Source Leakage Current IGSSVGS=22V, VDS=0V

VGS= 6V, VDS=0V

Switching Characteristics

VGS(on)=18V, VGS(off)=0VVDS=600VID=180A

RG(on)=1.0, RG(off)=0.2inductive load

K/W

Drain cutoff current VDS=1200V, VGS=0V

IF=180A

Case to heat sink, per 1 module,

Thermal grease appied *6 - 0.035

Junction-to-Case ThermalResistance

Rth(j-c)

-

Input Capacitance

-

-

Creepage Distance

Clearance Distance

Case-to -heat sinkThermal Resistance

ID

VDS

10%

VGS10%

90%

10% 10%

90%

Eon=Id×Vds

2%

td(on) tr

2%

trr

90%

2%2%

Eoff=Id×Vds

td(off) tf

Vsurge

3/10 2017.11 - Rev.A



Electrical characteristic curves (Typical)

　

Fig.1 Typical Output Characteristics [ Tj=25ºC ]

Dra

in C

urre

nt :

ID

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Drain-Source Voltage vs. Drain Current

Dra

in-S

ourc

e V

olta

ge :

VD

S[V

]

Drain Current : ID [A]

Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ Tj=25ºC ]

Dra

in-S

ourc

e V

olta

ge :

VD

S[V

]

Gate-Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[m

]

Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature

0

60

120

180

240

300

360

0 2 4 6 8

VGS =16V

VGS =18V

VGS =20V

VGS =14V

VGS =12V

VGS =10V

0

1

2

3

4

5

6

7

8

0 60 120 180 240 300 360

VGS =18V

Tj=25ºC

Tj=125ºC

Tj=150ºC

0

1

2

3

4

5

12 14 16 18 20 22 24

ID=180A

Tj=25ºC

ID=120A

ID=90A

ID=60A0

5

10

15

20

25

30

35

40

0 50 100 150 200 250

ID =180A

VGS=12V VGS=14V

VGS=16V

VGS=18V

VGS=20V

4/10 2017.11 - Rev.A




　

0

60

120

180

240

300

360

0 5 10 15

VDS =20V

Tj=25ºC

Tj=125ºC

Tj=150ºC

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0 5 10 15

Tj=25ºC

Tj=125ºC

VDS =20V

Tj=150ºC

1

10

100

1000

0 1 2 3 4

Tj=25ºC

Tj=125ºC

Tj=150ºC

0

60

120

180

240

300

360

0 1 2 3 4

Tj=25ºC

Tj=125ºC

Tj=150ºC

Fig.6 Forward characteristic of Diode

For

war

d C

urre

nt :

I F[A

]

Forward Voltage : VF [V]

Fig.5 Forward characteristic of Diode

For

war

d C

urre

nt :

I F[A

]

Forward Voltage : VF [V]

Gate-Source Voltage : VGS [V]

Fig.7 Drain Current vs. Gate-Source Voltage

Dra

in C

urre

nt :

ID

[A]

Fig.8 Drain Current vs. Gate-Source Voltage

Dra

in C

urre

nt :

ID

[A]

Gate-Source Voltage : VGS [V]

5/10 2017.11 - Rev.A




Fig.12 Switching Loss vs. Drain Current [ Tj=25ºC ]


Sw

itchi

ng L

oss

[m

J]

Fig.11 Switching Characteristics [ Tj=150ºC ]

Sw

itchi

ng T

ime

: t [

ns]


0

1

2

3

4

5

6

7

8

0 100 200 300 400

Eon

Eoff

Err

VDS =600VVGS(on) =18VVGS(off) =0VRG(on) 1.0RG(off) =0.2Inductive Load

1

10

100

1000

0 100 200 300 400

td(off)

tr

td(on)

tfVDS =600VVGS(on) =18VVGS(off) =0VRG(on) 1.0RG(off) =0.2Inductive Load

1

10

100

1000

0 100 200 300 400

td(off)

tr

td(on)

tfVDS =600VVGS(on) =18VVGS(off) =0VRG(on) 1.0RG(off) =0.2Inductive Load

1

10

100

1000

0 100 200 300 400


tf

td(off)

tr

td(on)


Sw

itchi

ng T

ime

: t [

ns]

Drain Current : ID [A]Drain Current : ID [A]


Sw

itchi

ng T

ime

: t [

ns]

6/10 2017.11 - Rev.A




1

10

100

1

10

100

0 100 200 300 400

trr

Irr


1

10

100

1

10

100

0 100 200 300 400

Irr

trr



Fig.16 Recovery Characteristics vs.Drain Current [ Tj=125ºC ]

Rec

over

y T

ime

: t rr

[ns]

Rec

over

y C

urre

nt :

I rr

[A]

Rec

over

y C

urre

nt :

I rr

[A]

Rec

over

y T

ime

: t rr

[ns]



0

1

2

3

4

5

6

7

8

0 100 200 300 400

Eon

Eoff

Err


0

1

2

3

4

5

6

7

8

0 100 200 300 400

Eon

Eoff

Err



Sw

itchi

ng L

oss

[m

J]



Sw

itchi

ng L

oss

[m

J]


7/10 2017.11 - Rev.A




10

100

1000

10000

0.1 1 10 100

VDS =600VID =180AVGS(on) =18VVGS(off) =0VInductive Load

td(off)

td(on)

tr

tf

10

100

1000

10000

0.1 1 10 100

td(off)

td(on)


tf

tr

Sw

itchi

ng T

ime

: t [

ns]

Gate Resistance : RG []

Fig.19 Switching Characteristics vs. Gate Resistance [ Tj=125ºC ]



Sw

itchi

ng T

ime

: t [

ns]

10

100

1000

10000

0.1 1 10 100

td(off)

td(on)


tf

tr

1

10

100

1

10

100

0 100 200 300 400

trr

Irr


Sw

itchi

ng T

ime

: t [

ns]





Rec

over

y T

ime

: t rr

[ns]

Rec

over

y C

urre

nt :

I rr

[A]

8/10 2017.11 - Rev.A




0

2

4

6

8

10

12

14

0.1 1 10 100


Eon

Eoff

Err

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

0.01 0.1 1 10 100 1000

Tj=25ºCVGS =0V200kHz

Coss

Ciss

Crss

Fig.23 Switching Loss vs. Gate Resistance [ Tj=150ºC ]

Sw

itchi

ng L

oss

[m

J]


Fig.24 Typical Capacitance vs. Drain-Source Voltage

Drain-Source Voltage : VDS [V]

Cap

asita

nce

: C

[F

]

0

2

4

6

8

10

12

14

0.1 1 10 100


Eon

Eoff

Err

0

2

4

6

8

10

12

14

0.1 1 10 100


Eon

Eoff

Err


Sw

itchi

ng L

oss

[m

J]



Sw

itchi

ng L

oss

[m

J]


9/10 2017.11 - Rev.A




Total Gate charge : Qg [nC]

0

5

10

15

20

25

0 200 400 600 800 1000 1200

ID =180ATj=25ºCVDS =600V

Fig.25 Gate Charge Characteristics [ Tj=25ºC ]

Gat

e-S

ourc

e V

olta

ge :

VG

S[V

]

Time [s]

Fig.26 Normalized Transient Thermal Impedance

Nor

mal

ized

Tra

nsie

nt T

herm

al Im

peda

nce

: Z

th

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Single PulseTc=25ºC

Per unit base DMOS part : 0.11K/WSBD part : 0.14K/W

10/10 2017.11 - Rev.A

R1107 Swww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

Notice

ROHM Customer Support System http://www.rohm.com/contact/

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

N o t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions.

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

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BSM180C12P2E202 : SiC Power...

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