BPW85

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BPW85

Document Number 81531

Rev. 1.5, 08-Mar-05

Vishay Semiconductors

www.vishay.com

1

94 8396

Silicon NPN Phototransistor

DescriptionBPW85 is a high speed and high sensitive siliconNPN epitaxial planar phototransistor in a standardT-1 ( 3 mm) plastic package. Due to its waterclear

epoxy the device is sensitive to visible and nearinfrared radiation.

The viewing angle of 25 makes it insensible toambient straylight.

Features

Fast response times

High photo sensitivity Standard T-1 ( 3 mm ) clear plastic package

Axial terminals

Angle of half sensitivity = 25

Suitable for visible and near infrared radiation

Selected into sensitivity groups

Lead-free component

Component in accordance to RoHS 2002/95/ECand WEEE 2002/96/EC

Applications

Detector in electronic control and drive circuits

Absolute Maximum RatingsTamb = 25 C, unless otherwise specified

Electrical CharacteristicsTamb = 25 C, unless otherwise specified

Parameter Test condition Symbol Value Unit

Collector Emitter Voltage VCEO 70 V

Emitter Collector Voltage VECO 5 V

Collector current IC 50 mA

Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA

Total Power Dissipation Tamb 55 C Ptot 100 mW

Junction Temperature Tj 100 C

Storage Temperature Range Tstg - 55 to + 100 C

Soldering Temperature t 3 s, 2 mm from case Tsd 260 C

Thermal Resistance Junction/

Ambient

RthJA

450 K/W

Parameter Test condition Symbol Min Typ. Max Unit

Collector Emitter Breakdown

Voltage

IC = 1 mA V(BR)CEO 70 V

Collector-emitter dark current VCE = 20 V, E = 0 ICEO 1 200 nA

Collector-emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF

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BPW85Vishay Semiconductors

Optical CharacteristicsTamb = 25 C, unless otherwise specified

Type Dedicated Characteristics

Typical Characteristics (Tamb = 25 C unless otherwise specified)

Parameter Test condition Symbol Min Typ. Max Unit

Angle of Half Sensitivity 25 deg

Wavelength of Peak Sensitivity p

850 nm

Range of Spectral Bandwidth 0.5 620 to 980 nm

Collector Emitter Saturation

VoltageEe = 1 mW/cm

2, = 950 nm,

IC = 0.1 mA

VCEsat 0.3 V

Turn-On Time VS = 5 V, IC = 5 mA, RL = 100 ton 2.0 s

Turn-Off Time VS = 5 V, IC = 5 mA, RL = 100 toff 2.3 s

Cut-Off Frequency VS = 5 V, IC = 5 mA, RL = 100 fc 180 kHz

Parameter Test condition Part Symbol Min Typ. Max Unit

Collector Light Current Ee = 1 mW/cm2, = 950 nm,

VCE = 5 V

BPW85A Ica 0.8 1.5 2.5 mA

BPW85B Ica 1.5 2.5 4.0 mA

BPW85C Ica 3.0 5.0 8.0 mA

Figure 1. Total Power Dissipation vs. Ambient Temperature

0 20 40 60 80

0

25

50

75

100

125

P

TotalPowe

rDissipation(mW)

tot

Tamb Ambient Temperature ( C )

100

94 8308

RthJA

Figure 2. Collector Dark Current vs. Ambient Temperature

94 8304

20

I

-CollectorD

arkCurrent(nA)

CEO

10040 60 80

Tamb - Ambient Temperature ( C )

100

101

102

103

104

VCE = 20 V

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Figure 3. Relative Collector Current vs. Ambient Temperature

Figure 4. Collector Light Current vs. Irradiance

Figure 5. Collector Light Current vs. Collector Emitter Voltage

94 8239

0

0.6

0.8

1.0

1.2

1.4

2.0

I

-RelativeCollectorCurrent

carel

20 40 60 80 100

1.6

1.8

VCE = 5 VEe = 1 mW/cm

2

= 950 nm

Tamb - Ambient Temperature ( C )

0.01 0.1 1

0.01

0.1

1

10

I

CollectorLightCurrent(mA)

ca

Ee Irradiance ( mW/cm2)

10

94 8271

BPW85C

BPW85B

VCE = 5V

= 950 nm

BPW85A

0.5mW/cm2

0.2mW/cm2

0.1mW/cm2

0.05mW/cm2

0.1 1 10

0.01

0.1

1

10

I

Col

lectorLightCurrent(mA)

ca

VCE Collector Emitter Voltage ( V )

100

94 8275

BPW 85 A = 950 nm

Ee=1mW/cm2



Figure 8. Collector Emitter Capacitance vs. Collector Emitter

Voltage

0.1 1 10

0.01

0.1

1

10

I

CollectorLightC

urrent(mA)

ca


100

94 8276

0.5mW/cm2

0.2mW/cm2

0.1mW/cm2

0.05mW/cm2

= 950 nm

BPW 85 B Ee=1mW/cm2

0.1 1 10

0.01

0.1

1

10

I

CollectorLightCurrent(mA)

ca


100

94 8277

Ee =1mW/cm2

0.5mW/cm2

0.2mW/cm2

0.1mW/cm2

0.05mW/cm2

BPW 85 C= 950 nm

0.1 1 10

0

2

4

6

8

10

VCE - Collector Emitter Voltage ( V )

100

94 8294

C

-

Collecto

rEmitterCapacitance(pF)

CEO

f = 1 MHz

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Figure 9. Turn On/Turn Off Time vs. Collector Current

Figure 10. Relative Spectral Sensitivity vs. Wavelength

Figure 11. Relative Radiant Sensitivity vs. Angular Displacement

0

2

8

94 8293

t

/t

-Turnon/TurnoffTime

(s

)

off

IC - Collector Current ( mA )

on

6

4

VCE = 5 VRL = 100

= 950 nm

t off

t on

20 4 6 1412108

400 600 1000

0

0.2

0.4

0.6

0.8

1.0

S

(

)

RelativeSpectralSensitivity

rel

Wavelength ( nm )94 8348

800

0.4 0.2 0 0.2 0.4

S

RelativeSensitivity

rel

0.6

94 8295

0.6

0.9

0.8

0

30

10 20

0.7

1.0

40

50

70

60

80

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Package Dimensions in mm

96 12190

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Rev. 1.5, 08-Mar-05


Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, aswell as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the useof ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.

We reserve the right to make changes to improve technical designand may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for eachcustomer application by the customer. Should the buyer use Vishay Semiconductors products for anyunintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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BPW85

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