BJT_CE

download BJT_CE

of 5

Transcript of BJT_CE

  • 7/31/2019 BJT_CE

    1/5

    S. S. N. COLLEGE OF ENGINEERING

    Prepared by B. RAMANI, Assistant Professor/ECE

    CHARACTERISTICS OF BJT CE CONFIGURATION

    AIM:

    To plot the input and output characteristics of a Bipolar Junction Transistor in CommonEmitter Configuration.

    EQUIPMENTS & COMPONENTS REQUIRED:

    Sl. No. Equipments & Components Range/ Specification Quantity

    1 RPS (0-30) V 2

    2 Transistor BC 107/ BC 547 1

    3 Ammeter (0-30) mA, (0-150) A 1 each

    4 Voltmeter (0-1) V, (0-30) V 1 each

    5 Resistor 1 K 2

    6 Bread Board 1

    7 Connecting wires As required

    THEORY:

    The transistor is a semiconductor device having three layers called emitter, base andcollector. It consists of two diodes namely emitter base diode and collector base diodeconnected back to back. Bipolar Junction Transistor is classified into NPN and PNP transistor.The doping varies between the three layers. Always the emitter base junction is forwardbiased and collector base is reverse biased. The DC characteristics are divided into INPUTand OUTPUT characteristics.

    PROCEDURE:

    INPUT CHARACTERISTICS:

    (1)Connect the circuit as per the circuit diagram.

    (2) Set VCE = 0V, vary VBB and note down the corresponding IB and VBE. Repeat the aboveprocedure for VCE = 5V, 10V, 15V, etc.

    (3) Plot the graph: VBE Vs IB for a constant VCE.

    (4) Find the h- parameters.

    Input Impedance, |BE

    ie CE B

    V

    h V const I

    = =

    Reverse Voltage Gain, |BEre B

    CE

    Vh I const

    V

    = =

  • 7/31/2019 BJT_CE

    2/5

    S. S. N. COLLEGE OF ENGINEERING

    Prepared by B. RAMANI, Assistant Professor/ECE

    OUTPUT CHARACTERISTICS:

    (1) Connect the circuit as per the circuit diagram.

    (2) Set IB = 10A, vary VCC and note down the corresponding IC and VCE. Repeat the

    above procedure for IB = 20 A, 30A, 40A etc.

    (3) Plot the graph: VCE Vs IC for a constant IB.

    (4) Find the h- parameters.

    Forward Current Gain, |Cfe CE

    B

    Ih V const

    I

    = =

    Output Admittance, |Coe B

    CE

    Ih I const V

    = =

    CIRCUIT DIAGRAM:

    PIN DIAGRAM:

  • 7/31/2019 BJT_CE

    3/5

    S. S. N. COLLEGE OF ENGINEERING

    Prepared by B. RAMANI, Assistant Professor/ECE

    MODEL GRAPH:

    Input Characteristics

    Output Characteristics

  • 7/31/2019 BJT_CE

    4/5

    S. S. N. COLLEGE OF ENGINEERING

    Prepared by B. RAMANI, Assistant Professor/ECE

    TABULAR COLUMN:

    INPUT CHARACTERISTICS:

    OUTPUT CHARACTERISTICS:

    VCE = _______ volts VCE = _______ volts VCE = ______ voltsVBE (volts) IB (A) VBE (volts) IB (A) VBE (volts) IB (A)

    IB = _______ A IB = _______ A IB = _______ A

    VCE (volts) IC (mA) VCE (volts) IC (mA) VCE (volts) IC (mA)

  • 7/31/2019 BJT_CE

    5/5

    S. S. N. COLLEGE OF ENGINEERING

    Prepared by B. RAMANI, Assistant Professor/ECE

    CALCULATIONS:

    RESULT:

    Thus the input and output characteristics of the given transistor are plotted and theparameters are calculated as

    hie = _______ (ohms) hre = _______ (no unit)

    hfe = _______ (no unit) hoe = _______ (mhos)