BFQ790 - Infineon Technologies

BFQ790High linearity RF medium power transistor

Product descriptionThe BFQ790 is a single stage high linearity and high gain driver amplifier based on NPNsilicon germanium technology.

Feature list• OIP3 = 38.5 dBm at 900 MHz, 5 V, 250 mA• OP1dB = 27 dBm at 900 MHz, 5 V, 250 mA corresponding to 40% collector efficiency• High gain Gms = 23 dB at 900 MHz, 5 V, 250 mA• High maximum RF input power PRFin,max = 18 dBm

Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications• Commercial and industrial wireless infrastructure• ISM band medium power amplifiers and drivers• Automated test equipment• UHF television, CATV and DBS

Device informationTable 1 Part information

Product name / Ordering code Package Pin configuration Marking Pieces / ReelBFQ790 / BFQ790H6327XTSA1 SOT89 1 = B 2 = E 3 = C R3 1000

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet Please read the Important Notice and Warnings at the end of this document v3.0www.infineon.com 2018-09-26

http://www.infineon.com/bfq790/order

http://www.infineon.com/bfq790/documents

http://www.infineon.com/bfq790/simulation

http://www.infineon.com/support

https://www.infineon.com

Table of contents

Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.1 DC parameter table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.2 AC parameter tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.3 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94.4 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Package information SOT89 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22


Table of contents

Datasheet 2 v3.02018-09-26

1 Absolute maximum ratings

Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)

Parameter Symbol Values Unit Note or test conditionMin. Max.

Collector emitter voltage VCE ––

6.15.1

V TA = 25 °CTA = -40 °C

Collector base voltage VCB – 18 V –

Instantaneous total base emitterreverse voltage

vBE -2 – V DC + RF swing

Instantaneous total collector current iC – 600 mA DC + RF swing

DC collector current IC – 300 mA –

DC base current IB – 10 mA –

RF input power PRFin – 18 dBm In- and output matched

Mismatch at output VSWR – 10:1 In compression, over allphase angles

ESD stress pulse VESD -500 500 V HBM, all pins, acc. to ANSI /ESDA / JEDEC JS-001-2012

Dissipated power Pdiss – 1500 mW TS ≤ 112.5 °C 1), regardderating curve in Figure 1.

Junction temperature TJ – 150 °C –

Operating case temperature TA -40 105 2) °C –

Storage temperature TStg -55 150 °C –

Attention: Stresses above the max. values listed here may cause permanent damage to the device.Exposure to absolute maximum rating conditions for extended periods may affect devicereliability. Maximum ratings are absolute ratings; exceeding only one of these values may causeirreversible damage to the component.

1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.2 At the same time regard TJ,max.


Absolute maximum ratings

Datasheet 3 v3.02018-09-26

2 Recommended operating conditionsThis following table shows examples of recommended operating conditions. As long as maximum ratings areregarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.For further information refer to the quality report available on the BFQ790 internet page.

Table 3 Recommended operating conditions

Operatingmode

Ambienttempera-ture 1)

Collectorcurrent

DCpower 2)

RFoutputpower 3)

Efficiency 4) Dissipatedpower 5)

Thermalresistanceof PCB 6)

Junctiontempera-ture 7)

TA[°C]

IC[mA]

PDC[mW]

PRFout[mW](dBm)

η[%]

Pdiss[mW]

RthSA[K/W]

TJ[°C]

Compression 55 250 1250 500 (27) 40 750 45 110

Final stage 55 200 1000 250 (24) 25 750 45 110

High TA 85 120 600 50 (17) 8.5 550 20 110

Maximum TA 105 50 250 100 (20) 40 150 30 110

Linear 55 150 750 50 (17) 7 700 50 110

Very linear 55 250 1250 50 (17) 4 1200 20 110

1 Is the operating case temperature respectively of the heat sink.2 PDC = VCE* IC with VCE = 5 V.3 RF power delivered to the load, PRFout = η * PDC.4 Efficiency of the conversion from DC power to RF power, η = PRFout / PDC (collector efficiency).5 Pdiss = PDC - PRFout. The RF output power PRFout delivered to the load reduces the power Pdiss to be

dissipated by the device. This means a good output match is recommended.6 RthSA is the thermal resistance of the PCB including heat sink, that is between the soldering point S and

the ambient A. Regard the impact of RthSA on the junction temperature TJ, see below. The thermal designof the PCB, respectively RthSA, has to be adjusted to the intended operating mode.

7 TJ = TA + Pdiss * RthJA.RthJA = RthJS + RthSA.RthJA is the thermal resistance between the transistor junction J and the ambient A.RthJS is the combined thermal resistance of die and package, which is 25 K/W for BFQ790, see Chapter 3.


Recommended operating conditions

Datasheet 4 v3.02018-09-26

3 Thermal characteristics

Table 4 Thermal resistance

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Junction - soldering point RthJS – 25 – K/W –

Figure 1 Absolute maximum power dissipation Pdiss,max = f(TS)

Note: In the horizontal part of the derating curve the maximum power dissipation is givenby Pdiss,max ≈ VCE,max * IC,max. In this part, the junction temperature TJ is lower than TJ,max. In thedeclining slope, it is TJ = TJ,max. Pdiss,max has to be reduced according to the curve in order not toexceed TJ,max. It is TJ,max = TS + Pdiss,max * RthJS.


Thermal characteristics

Datasheet 5 v3.02018-09-26

4 Electrical performance in test fixture

4.1 DC parameter table

Table 5 DC characteristics at TA = 25 °C


Collector emitter breakdown voltage V(BR)CEO 6.1 6.7 – V IC = 1 mA, open base

Collector emitter leakage current ICES ––

10.1

40 1)

3nAμA

VCE = 8 V, VBE = 0 VVCE = 18 V, VBE = 0 V,E-B short circuited

Collector base leakage current ICBO – 1 40 1) nA VCB = 8 V, IE = 0,open emitter

Emitter base leakage current IEBO – 1 40 1) μA VEB = 0.5 V, IC = 0,open collector

DC current gain hFE 60 120 180 VCE = 5 V, IC = 250 mA,pulse measured 2)

4.2 AC parameter tables

Table 6 General AC characteristics at TA = 25 °C


Transition frequency fT – 20 – GHz VCE = 5 V, IC = 250 mA,f = 0.5 GHz

Collector base capacitance CCB – 1.1 – pF VCB = 5 V, VBE = 0 V,f = 1 MHz,emitter grounded

Collector emitter capacitance CCE – 2.2 – pF VCE = 5 V, VBE = 0 V,f = 1 MHz,base grounded

Emitter base capacitance CEB – 9.4 – pF VEB = 0.5 V, VCB = 0 V,f = 1 MHz,collector grounded

1 Upper spec value not limited by the device but by the short cycle time of the 100% test.2 Pulse width is 1 ms, duty cycle 10%. Regard that the current gain hFE depends on the junction temperature

TJ and TJ amongst others from the thermal resistance RthSA of the PCB, see notes to Table 3. Hence the hFEspecified in this datasheet must not be the same as in the application. It is highly recommended to applycircuit design techniques to make the collector current IC independent on the hFE production variationand temperature effects.


Electrical performance in test fixture

Datasheet 6 v3.02018-09-26

Measurement setup for the AC characteristics shown in Table 7 to Table 10 is a test fixture with Bias-T’s andtuners to adjust the source and load impedance in a 50 Ω system, TA = 25 °C.

Figure 2 BFQ790 testing circuit

Table 7 AC characteristics, VCE = 5 V, f = 0.9 GHz


Power gainMaximum power gainTransducer gain

Gms|S21|2

––

2313

––

dB IC = 250 mA

Minimum noise figureMinimum noise figure

NFmin

–

2.5

–

dB ZS = ZS,opt, IC = 70 mA

Linearity1 dB compression point at output3rd order intercept point at output

OP1dBOIP3

––

2738.5

––

dBm ZL = ZLopt, IC = 250 mA




Gma|S21|2

––

18.57.5

––

dB IC = 250 mA


NFmin

–

2.6

–



OP1dBOIP3

––

2738.5

––




Datasheet 7 v3.02018-09-26




Gma|S21|2

––

165.5

––

dB IC = 250 mA


NFmin

–

3

–



OP1dBOIP3

––

2738.5

––





Gma|S21|2

––

133

––

dB IC = 250 mA


NFmin

–

3.4

–



OP1dBOIP3

––

2738.5

––




Datasheet 8 v3.02018-09-26

4.3 Characteristic DC diagrams

0 1 2 3 4 5 6 70

50

100

150

200

250

300

350

400

450

500

VCE [V]

I C[m

A]

0mA

0.75mA

1.5mA

2.25mA

3mA

3.75mA

4.5mA

5.25mA

6mA

Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter

Note: Refer to absolute maximum ratings for IC, VCE and Pdiss.

100 101 102 103101

102

103

Ic [mA]

h FE

Figure 4 DC Current gain hFE = f(IC), VCE = 5 V



Datasheet 9 v3.02018-09-26

102 103 104 105 106 1076

8

10

12

14

16

18

20

22

24

RBE[Ω]

V(

BR)C

ER.

[V]

102 103 104 105 106 1076

8

10

12

14

16

18

20

22

24

RBE[Ω]

V(

BR)C

ER.

[V]

RBE

BC

E

Figure 5 Collector emitter breakdown voltage V(BR)CER = f(RBE)

Note: The above figure shows the collector-emitter breakdown voltage V(BR)CER with a resistor RBE betweenbase and emitter. Only for very high RBE values ("open base") the breakdown voltage V(BR)CER is as lowas V(BR)CEO (here 6.6 V). With decreasing RBE values V(BR)CER increases, e.g. at RBE = 10 kΩ to V(BR)CEO =10 V. In the application the biasing base resistance together with block capacitors take over thefunction of RBE and allows the RF voltage amplitude to swing up to voltages much higher thanV(BR)CEO, without clipping. Due to this effect the transistor can be biased at VCE = 5 V and still high RFoutput powers achieved, see the OP1dB values reported in Chapter 4.2.



Datasheet 10 v3.02018-09-26

4.4 Characteristic AC diagrams

0 100 200 300 400 500 6000

5

10

15

20

25

IC [mA]

f T[G

Hz]

0.50V

1.00V

2.00V

3.00V 4.00V 5.00V

Figure 6 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter

0 100 200 300 400 500 6001

1.4

1.8

2.2

2.6

3

IC [mA]

CC

B [p

F]

5.00V 4.00V 3.00V

2.00V

1.00V

Figure 7 Collector base capacitance CCB = f(IC), f = 30 MHz, VCB = parameter



Datasheet 11 v3.02018-09-26

0 1 2 3 4 5 60

3

6

9

12

15

18

21

24

27

30

33

36

f [GHz]

G [d

B]Gms

Gma

|S21|2

Figure 8 Gain Gms, Gma, IS21I2 = f(f), VCE = 5 V, IC = 250 mA

0 100 200 300 400 500 6006

9

12

15

18

21

24

27

30

33

36

IC [mA]

Gm

ax[d

B]

3.50GHz

2.60GHz 1.80GHz 1.50GHz

0.90GHz

0.45GHz

0.15GHz

Figure 9 Maximum power gain Gmax = f(IC), VCE = 5 V, f = parameter



Datasheet 12 v3.02018-09-26

0 1 2 3 4 5 6 76

9

12

15

18

21

24

27

30

33

36

VCE [V]

Gm

ax[d

B]

3.50GHz

2.60GHz

1.80GHz 1.50GHz

0.90GHz

0.45GHz

0.15GHz

Figure 10 Maximum power gain Gmax = f(VCE), IC = 250 mA, f = parameter

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.01 to 6 GHz

1.0

2.0

3.0

4.0 5.0

6.0

0.01

70 mA150 mA200 mA250 mA

Figure 11 Input reflection coefficient S11 = f(f), VCE = 5 V, IC = parameter



Datasheet 13 v3.02018-09-26

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.01 to 6 GHz

1.0

2.0

3.0

4.05.0

6.0

0.01

70 mA150 mA200 mA250 mA

Figure 12 Output reflection coefficient S22 = f(f), VCE = 5 V, IC = parameter

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.45 to 3.5 GHz0.45

0.9

1.5

1.8

2.6

3.0

3.5

70 mA150 mA200 mA250 mA

Figure 13 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 5 V, IC = parameter



Datasheet 14 v3.02018-09-26

0 0.5 1 1.5 2 2.5 3 3.5 41

1.5

2

2.5

3

3.5

4

4.5

5

f [GHz]

NF m

in[d

B]

IC = 70 mA

IC = 150 mA

IC = 200 mA

IC = 250 mA

Figure 14 Noise figure NFmin = f(f), VCE = 5 V, ZS = ZS,opt, IC = parameter

0 50 100 150 200 2501

1.5

2

2.5

3

3.5

4

4.5

5

IC [mA]

NF m

in[d

B]

f = 1.5 GHzf = 1.8 GHzf = 2.6 GHzf = 3.5 GHz

Figure 15 Noise figure NFmin = f(IC), VCE = 5 V, ZS = ZS,opt, f = parameter



Datasheet 15 v3.02018-09-26

0 50 100 150 200 2502

2.5

3

3.5

4

4.5

5

5.5

6

6.5

7

7.5

8

IC [mA]

NF 50

[dB]

f = 2.6 GHz

f = 1.5 GHz

f = 1.8 GHz

f = 3.5 GHz

Figure 16 Noise figure NF50 = f(IC), VCE = 5 V, ZS = 50 Ω, f = parameter

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

26.5 26 25.2 23.9

25.6 24.7

23.4

21.3

24.3

23.4

21.3

27

Figure 17 Load pull contour OP1dB [dBm], VCE = 5 V, IC = 250 mA, f = 900 MHz



Datasheet 16 v3.02018-09-26

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

37.9 37.4 36.3

35.7

34.7

32.5

36.8

35.2

33

38.5

Figure 18 Load pull contour OIP3 [dBm], VCE = 5 V, IC = 250 mA, f = 900 MHz

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

19.6 19 18 17

18.517.5

16.515.5

13.4

16.516

14.4

Figure 19 Load pull contour gain G [dB], VCE = 5 V, IC = 250 mA, f = 900 MHz



Datasheet 17 v3.02018-09-26

−20 −15 −10 −5 0 5 10 15 200

10

20

30

40

50

60

70

80

Pin [dBm]

Pout

[dBm

], G

ain

[dB]

, PAE

[%]

Pout

G

PAE

IC

140

160

180

200

220

240

260

280

300

I C[m

A]

IP1dB

Figure 20 Pout, Gain, IC, PAE = f(Pin), VCE = 5 V, ICq = 155 mA, f = 900 MHz, ZL = ZL,opt (Pout)

−25 −20 −15 −10 −5 0 5 10 15−20

−10

0

10

20

30

40

50

60

Pin [dBm]

Pout

[dBm

], G

ain

[dB]

, PAE

[%]

Pout

G

PAE

IC

250

260

270

280

290

I C[m

A]

IP1dB

Figure 21 Pout, Gain, IC, PAE = f(Pin), VCE = 5 V, ICq = 250 mA, f = 900 MHz, ZL = ZL,opt (Pout)



Datasheet 18 v3.02018-09-26

−25 −20 −15 −10 −5 0 5 10 15−10

0

10

20

30

40

50

Pin [dBm]

Pout

[dBm

], G

ain

[dB]

, PAE

[%]

Pout

G

PAE

IC

250

255

260

265

270

275

280

I C[m

A]

IP1dB

Figure 22 Pout, Gain, IC, PAE = f(Pin), VCE = 5 V, ICq = 250 mA, f = 2.6 GHz, ZL = ZL,opt (Pout)

50 100 150 200 25032

33

34

35

36

37

38

39

IC [mA]

OIP

3 [d

Bm]

Figure 23 OIP3 = f(IC), VCE = 5 V, f = 900 MHz, ZL = ZL,opt (Pout)

Note: The curves shown in this chapter have been generated using typical devices but shall not beunderstood as a guarantee that all devices have identical characteristic curves. TA = 25 °C.



Datasheet 19 v3.02018-09-26

5 Package information SOT89

SOT89-PO V02

0.45 +0.2

1) Ejector pin markings possible

1.5

30.2

-0.1

B

0.251)

±0.05

45˚

0.152.

5±0.

1

4±0.

25M B

B

0.15

±0.10.35

±0.2

1

1.5 ±0.1

±0.21.6

-0.1

5+0

.12.

75

±0.14.5

±0.1

1

x3

0.2 MAX.1)

1 2 3

Figure 24 Package outline (dimensions in mm)

0.80.8

2.0

1.0

1.2

2.5

0.7SOT89-FP V02

Figure 25 Foot print (dimension in mm)

Figure 26 Marking layout example

ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ]

8

4

4.6

4.3

12

0.2

1.6

Figure 27 Tape information


Package information SOT89

Datasheet 20 v3.02018-09-26

Revision historyDocumentversion

Date ofrelease

Description of changes

3.0 2018-09-26 New datasheet layout.


Revision history

Datasheet 21 v3.02018-09-26

TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2018-09-26Published byInfineon Technologies AG81726 Munich, Germany © 2018 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-hws1468299808712

IMPORTANT NOTICEThe information given in this document shall in noevent be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”) .With respect to any examples, hints or any typical valuesstated herein and/or any information regarding theapplication of the product, Infineon Technologieshereby disclaims any and all warranties and liabilities ofany kind, including without limitation warranties ofnon-infringement of intellectual property rights of anythird party.In addition, any information given in this document issubject to customer’s compliance with its obligationsstated in this document and any applicable legalrequirements, norms and standards concerningcustomer’s products and any use of the product ofInfineon Technologies in customer’s applications.The data contained in this document is exclusivelyintended for technically trained staff. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the productinformation given in this document with respect to suchapplication.

WARNINGSDue to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest InfineonTechnologies office.Except as otherwise explicitly approved by InfineonTechnologies in a written document signed byauthorized representatives of Infineon Technologies,Infineon Technologies’ products may not be used inany applications where a failure of the product orany consequences of the use thereof can reasonablybe expected to result in personal injury

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