BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz (Band 42 ...

RF and Protect ion Devices

BFP840FESD

Technical Report TR1129 Revision: Rev. 1.1

2013-06-05

Low Noise Ampl i f ier for 3.4GHz- 3.8GHz (Band 42/ 43)

Edition 2013-06-05

Published by Infineon Technologies AG 81726 Munich, Germany

© 2013 Infineon Technologies AG All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz

Technical Report, Rev. 1.1 2013-06-05 3 / 26

Technical Report TR1129

Revision History: 2013-06-05

Previous Revision:

Page Subjects (major changes since last revision)

17 to 22 Figure 17 to Figure 28: Temperature measurement results are included

Trademarks of Infineon Technologies AG

AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.

Other Trademarks

Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.

Last Trademarks Update 2011-11-11

BFP840FESD

Low Noise Amplifier for 3.4GHz- 3.8GHz


Table of Content

1 Application Circuit and Performance Overview .............................................................................. 5 1.1 Summary of Measurement Results ...................................................................................................... 5 1.2 High Gain Low Noise Amplifier using BFP840FESD for 3.4 – 3.8 GHz LTE Application .................... 6 1.3 Schematics and Bill-of-Materials .......................................................................................................... 8

2 Measured Graphs ............................................................................................................................. 10

3 Evaluation Board and layout Information ...................................................................................... 23

4 Authors .............................................................................................................................................. 25

List of Figures

Figure 1 Package and pin connections of BFP840FESD in Topview ................................................................ 6 Figure 2 Schematics of BFP840FESD Low Noise Amplifier for 3.4 – 3.8 GHz Application ............................... 8 Figure 3 Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD ................................................. 10 Figure 4 Wideband Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD ................................ 10 Figure 5 Noise Figure of BFP840FESD LNA for 3400 - 2500 MHz ................................................................. 11 Figure 6 Reverse Isolation of the 3.4 – 3.8 GHz LNA with BFP840FESD ....................................................... 11 Figure 7 Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD ........................................................... 12 Figure 8 Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart) .................................... 12 Figure 9 Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD ........................................................ 13 Figure 10 Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart) .................................. 13 Figure 11 Wideband Stability k Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD ....................................... 14 Figure 12 Wideband Stability Mu Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD.................................... 14 Figure 13 1dB Compression Point of the BFP840FESD Circuit at 3600 MHz ................................................... 15 Figure 14 Output 3

rd Order Intercept Point of BFP840FESD at 3600 MHz ........................................................ 15

Figure 15 OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD ...................... 16 Figure 16 OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD ...................... 16 Figure 17 Bias current in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ......................................... 17 Figure 18 Noise Figure of BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) .... 17 Figure 19 BFP840FESD LNA Insertion Power Gain in the Temperature Range from -40˚C to 85˚C (Vcc=3.0

V) ........................................................................................................................................................ 18 Figure 20 BFP840FESD LNA Reverse Isolation in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) 18 Figure 21 BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) .... 19 Figure 22 BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Smith Chart)

(Vcc=3.0 V) ........................................................................................................................................ 19 Figure 23 BFP840FESD LNA Output Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) ... 20 Figure 24 BFP840FESD LNA Output Matching in the temperature range from -40 ˚C to 85 ˚C (Smith Chart)

(Vcc=3.0 V) ........................................................................................................................................ 20 Figure 25 1dB Compression Point of the BFP840FESD LNA at 3.6 GHz in the Temperature Range from -40˚C

to 85˚C (Vcc=3.0 V) ............................................................................................................................ 21 Figure 26 K Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) .... 21 Figure 27 µ1 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ... 22 Figure 28 µ2 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ... 22 Figure 29 Photo Picture of Evaluation Board ..................................................................................................... 23 Figure 30 Zoom-In Picture of the BFP840FESD 3.4 – 3.8 GHz LNA Evaluation Board .................................... 23 Figure 31 Layout Proposal for RF Grounding of the 3.4 – 3.8 GHz LNA with BFP840FESD ........................... 24 Figure 32 PCB Layer Information ....................................................................................................................... 24

List of Tables

Table 1 Summary of Measurement Results ...................................................................................................... 5 Table 2 Bill-of-Materials ..................................................................................................................................... 9

BFP840FESD

Low Noise Amplifier for 3.4GHz- 3.8GHz


1 Application Circuit and Performance Overview

Device: BFP840FESD

Application: Low Noise Amplifier for 3.4GHz- 3.8GHz (Band 42/ 43)

PCB Marking: M13031106 0.6mmEDG TSFP-4-1 BFP840FESD

1.1 Summary of Measurement Results

Table 1 Summary of Measurement Results

Parameter Symbol Value Unit Note/Test Condition

DC Voltage Vcc 3.0 V

DC Current Icc 14.5 mA

Frequency Range Freq 3400 3600 3800 MHz

Gain G 18.2 17.7 17.2 dB

Noise Figure NF 1.11 1.06 1.11 dB SMA and PCB losses (~0.05 dB) are subtracted

Input Return Loss RLin 11.6 12.2 13.3 dB

Output Return Loss RLout 23.8 23.7 15.0 dB

Reverse Isolation IRev 29.6 29.2 29.0 dB

Input P1dB IP1dB -12.6 dBm Measured @ 3600MHz

Output P1dB OP1dB 4.1 dBm

Input IP3 IIP3 -3 dBm Measured @ 3600MHz, ∆f =1 MHz, Pin= - 30 dBm

Output IP3 OIP3 14.7 dBm

Stability k > 1.0 -- Measured up to 15 GHz

BFP840FESD

Low Noise Amplifier for 3.4GHz- 3.8GHz Application Circuit and Performance Overview


1.2 High Gain Low Noise Amplifier using BFP840FESD for 3.4 – 3.8 GHz LTE Application

The BFP840FESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed

for high performance 3.4 – 3.8 GHz low noise amplifier (LNA) solutions for LTE connectivity

applications. It combines the 80 GHz fT silicon-germanium:carbide (SiGe:C) B9HFM process

with special device geometry engineering to reduce the parasitic capacitance between

substrate and transistor that degrades high-frequency characteristics, resulting in an inherent

input matching and a major improvement in power gain Band 42/43 together with a low noise

figure performance that is industry's best.

The BFP840FESD has an integrated 1.5kV HBM ESD protection which makes the device

robust against electrostatic discharge and extreme RF input power. The device offers its high

performance at low current and voltage and is especially well-suited for portable battery

powered applications in which energy efficiency is a key requirement.

The BFP840FESD is housed in flat-leads TSFP-4-1 package. Further variants are available

in industry standard visible-leads SOT343 package (BFP840ESD) and in the low-height

0.31mm TSLP-3-9 package (BFR840L3RHESD) specially fitting into modules.

Figure 1 shows the pin assignment of package of BFP840FESD in the top view:

XYs

1 4

2 3

BFPXXXF

B

E

E

C

Figure 1 Package and pin connections of BFP840FESD in Topview

BFP840FESD



This application note presents the measurement results of the Low Noise Amplifier using

BFP840FESD for 3400 MHz to 3800 MHz LTE applications. It requires 10 passive 0402 SMD

components and can provide 17.7 dB gain at 3600 MHz. The noise figure varies from 1.03

dB to 1.08 dB (SMA and PCB losses are subtracted) over the frequency band.

The circuit achieves an input return loss of 12 dB and output return loss 24 dB. Furthermore,

the circuit is unconditionally stable from 10 MHz to 15 GHz. However, Proper RF grounding

on PCB has to be ensured in order to achieve stability k-factor > 1 (Figure 3111).

At 3600 MHz, using two tones spacing of 1 MHz, the output third order intercept point OIP3

reaches 14.7 dBm. Besides, we obtain input 1dB input compression point IP1dB of -12.6

dBm at 3600 MHz.

BFP840FESD



1.3 Schematics and Bill-of-Materials

Q1

BFP840FESD J1

RF Port1

INPUT

I = 14.5 mA

R2

20 Ω

Vcc

= 3.0 V

J3DC Connector

J2

RF Port2

OUTPUT

C1

6.8 pF

C21.2 pF

Please refer to chapter 5 for layout proposal

PCB = M13031106 BFP840FESD TSFP-4-1

PCB Board Material = Standard FR4

Layer spacing (top RF to internal ground plane): 0.2 mm

33 kΩ

R1

C4

39 pF

Total Component Count = 10

including BFP840FESD transistor

Inductors = 2 (Low Q)

Resistors = 4

Capacitors = 4

All passives are “0402“ case size

Inductors: LQG Series

Capacitors: Various

L11.8 nH

C339 pF

R3

100 Ω

R4

5.1 Ω

L2

1.6 nH

Figure 2 Schematics of BFP840FESD Low Noise Amplifier for 3.4 – 3.8 GHz Application

BFP840FESD



Table 2 Bill-of-Materials

Symbol Value Unit Size Manufacturer Comment

C1 6.8 pF 0402 Various DC block & input matching

C2 1.2 pF 0402 Various DC block & output matching

C3 39 pF 0402 Various RF decoupling

C4 39 pF 0402 Various RF decoupling

L1 1.8 nH 0402 LQG Input matching

L2 1.6 nH 0402 LQG Output matching and high frequency stability improvement

R1 33 kΩ 0402 Various DC biasing

R2 20 Ω 0402 Various

DC biasing (provides DC negative feedback to stabilize DC operating point over temperature variation, transistor hFE variation, etc.)

R3 100 Ω 0402 Various Stability and input/output mathcing

R4 5.1 Ω 0402 Various Output matching and stability improvement

Q1 TSLP-4-1 Infineon Technologies BFP840FESD SiGe: C Heterojunction Bipolar RF Transistor

BFP840FESD

Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs


2 Measured Graphs

2000 3000 4000 5000

Frequency (MHz)

Insertion Power Gain InBand

-30

-20

-10

0

10

20

3600 MHz17.7 dB

3800 MHz17.2 dB

3400 MHz18.2 dB

Figure 3 Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD

100 2100 4100 6100 8100 10000

Frequency (MHz)

Insertion Power Gain WideBand

-30

-20

-10

0

10

20

3400 MHz18.2 dB

3600 MHz17.7 dB

3800 MHz17.2 dB

Figure 4 Wideband Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD

BFP840FESD



3400 3500 3600 3700 3800

Frequency (MHz)

Noise Figure_3G4_3G8

0

0.5

1

1.5

2

NF

(dB

)

3800 MHz1.08 dB

3400 MHz1.08 dB

3600 MHz1.03 dB

Figure 5 Noise Figure of BFP840FESD LNA for 3400 - 2500 MHz

2000 3000 4000 5000

Frequency (MHz)

Reverse Isolation

-100

-80

-60

-40

-20

3400 MHz-29.6 dB

3600 MHz-29.2 dB

3800 MHz-29 dB

Figure 6 Reverse Isolation of the 3.4 – 3.8 GHz LNA with BFP840FESD

BFP840FESD



2000 3000 4000 5000

Frequency (MHz)

Input Matching

-40

-30

-20

-10

0

3800 MHz-13.3 dB

3600 MHz-12.2 dB

3400 MHz-11.6 dB

Figure 7 Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD

0 1.0

1.0

-1.0

10.0

10.0

-10.0

5.0

5.0

-5.0

2.0

2.0

-2.0

3.0

3.0

-3.0

4.0

4.0

-4.0

0.2

0.2

-0.2

0.4

0.4

-0.4

0.6

0.6

-0.6

0.8

0.8

-0.8

Input Matching SmithSwp Max

5000MHz

Swp Min

2000MHz

3800 MHzr 0.790891x -0.327001

3600 MHzr 0.831217x -0.434733

3400 MHzr 0.93369x -0.52487

Figure 8 Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart)

BFP840FESD



2000 3000 4000 5000

Frequency (MHz)

Output Matching

-40

-30

-20

-10

0

3400 MHz-23.8 dB

3600 MHz-23.7 dB

3800 MHz-15 dB

Figure 9 Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD

0 1.0

1.0

-1.0

10.0

10.0

-10.0

5.0

5.0

-5.0

2.0

2.0

-2.0

3.0

3.0

-3.0

4.0

4.0

-4.0

0.2

0.2

-0.2

0.4

0.4

-0.4

0.6

0.6

-0.6

0.8

0.8

-0.8

Output Matching SmithSwp Max

5000MHz

Swp Min

2000MHz

3800 MHzr 1.36842x 0.198658

3400 MHzr 0.965828x -0.12063

3600 MHzr 1.13344x 0.0318644

Figure 10 Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart)

BFP840FESD



100 5100 10100 15000

Frequency (MHz)

Stability k Factor

0

0.5

1

1.5

2

2.5

3

10081 MHz1.3

Figure 11 Wideband Stability k Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD

10 5010 10010 15000

Frequency (MHz)

Stability Mu Factor

0

1

2

3

4MU1 MU2

Figure 12 Wideband Stability Mu Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD

BFP840FESD



-25 -20 -15 -10 -5 0

Pin (dBm)

Input 1dB Compression Point_3G6

0

5

10

15

20

25

Ga

in(d

B)

-25 dBm17.78 dB

-12.6 dBm16.78 dB

Figure 13 1dB Compression Point of the BFP840FESD Circuit at 3600 MHz

3598 3599 3600 3601 3602 3603

Frequency (MHz)

Output 3rd Order Intercept Point_3G6

-100

-80

-60

-40

-20

0

Pow

er

(dB

m)

3601 MHz-20.1

3599 MHz-87.9

3600 MHz-20.1

3602 MHz-89.7

Figure 14 Output 3rd

Order Intercept Point of BFP840FESD at 3600 MHz

BFP840FESD



1000 3000 5000 7000 9000 10000

Frequency (MHz)

OFF_Mode

-100

-80

-60

-40

-20

0

3400 MHz-25.1 dB

3600 MHz-24.8 dB

3800 MHz-24.7 dB

Figure 15 OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD

1000 3000 5000 7000 9000 10000

Frequency (MHz)

OFF_Mode

-100

-80

-60

-40

-20

0

3400 MHz-25.1 dB

3600 MHz-24.8 dB

3800 MHz-24.7 dB

Figure 16 OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD

BFP840FESD



-40 -15 10 35 60 85

Temperature (DegC)

Bias Current

10

12

14

16

18

20

Icc (

mA

)

25 DegC14.6

85 DegC12

-40 DegC16.8

PlotCol(1,2)Bias_current

Figure 17 Bias current in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)

3.4 3.5 3.6 3.7 3.8

Frequency (GHz)

Noise Figure

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

NF

(d

B)

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 18 Noise Figure of BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V)

BFP840FESD



2 2.5 3 3.5 4 4.5 5

Frequency (GHz)

10

12

14

16

18

20

22

S21 (

dB

)

3.8 GHz17.83 dB

3.4 GHz18.9 dB

3.8 GHz16.4 dB

3.4 GHz17.38 dB

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 19 BFP840FESD LNA Insertion Power Gain in the Temperature Range from -40˚C to 85˚C

(Vcc=3.0 V)

3.2 3.4 3.6 3.8 4

Frequency (GHz)

-35

-33

-31

-29

-27

-25

S12 (

dB

)

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 20 BFP840FESD LNA Reverse Isolation in the Temperature Range from -40˚C to 85˚C

(Vcc=3.0V)

BFP840FESD



2.5 3 3.5 4 4.5 5 5.5 6

Frequency (GHz)

-40

-30

-20

-10

0

S11 (

dB

)

3.8 GHz-15.58 dB

3.4 GHz-12.81 dB

3.8 GHz-11.64 dB

3.4 GHz-9.963 dB

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 21 BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)

0 1.0

1.0

-1.0

10.0

10.0

-10.0

5.0

5.0

-5.0

2.0

2.0

-2.0

3.0

3.0

-3.0

4.0

4.0

-4.0

0.2

0.2

-0.2

0.4

0.4

-0.4

0.6

0.6

-0.6

0.8

0.8

-0.8

S11Swp Max

4GHz

Swp Min

3.2GHz

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 22 BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Smith

Chart) (Vcc=3.0 V)

BFP840FESD



2.5 3 3.5 4 4.5 5 5.5 6

Frequency (GHz)

-50

-40

-30

-20

-10

0

10

S2

2 (

dB

)

3.8 GHz-12.79 dB

3.4 GHz-27.93 dB

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 23 BFP840FESD LNA Output Matching in the Temperature Range from -40˚C to 85˚C

(Vcc=3.0V)

0 1.0

1.0

-1.0

10.0

10.0

-10.0

5.0

5.0

-5.0

2.0

2.0

-2.0

3.0

3.0

-3.0

4.0

4.0

-4.0

0.2

0.2

-0.2

0.4

0.4

-0.4

0.6

0.6

-0.6

0.8

0.8

-0.8

S22Swp Max

4GHz

Swp Min

3.2GHz

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 24 BFP840FESD LNA Output Matching in the temperature range from -40 ˚C to 85 ˚C (Smith

Chart) (Vcc=3.0 V)

BFP840FESD



-20 -18 -16 -14 -12 -10 -8

Input power (dBm)

12

14

16

18

20

Outp

ut pow

er

(dB

m)

-20 dBm18.263

-20 dBm16.808

-12.84 dBm15.8

-12.91 dBm17.26

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 25 1dB Compression Point of the BFP840FESD LNA at 3.6 GHz in the Temperature Range from

-40˚C to 85˚C (Vcc=3.0 V)

0.2 5.2 10.2 15

Frequency (GHz)

K factor

0

1

2

3

4

5

10.18 GHz1.117

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 26 K Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)

BFP840FESD



0.01 5.01 10.01 15

Frequency (GHz)

u1

0

1

2

3

4

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 27 µ1 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)

0.05 5.05 10.05 15

Frequency (GHz)

u2

0

1

2

3

4

-40 °C 0 °C 25 °C 50 °C 85 °C

Figure 28 µ2 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V)

BFP840FESD

Low Noise Amplifier for 3.4GHz- 3.8GHz Evaluation Board and layout Information


3 Evaluation Board and layout Information

In this Technical Report, the following PCB is used:

PCB Marking: M13031106 0.6mmEDG TSFP-4-1 BFP840FESD

PCB Board Material: Standard FR4

ᵋr of PCB Material: 4.3 (FR4)

Figure 29 Photo Picture of Evaluation Board

Figure 30 Zoom-In Picture of the BFP840FESD 3.4 – 3.8 GHz LNA Evaluation Board

BFP840FESD

Low Noise Amplifier for 3.4GHz- 3.8GHz Evaluation Board and layout Information


0.3mm

0.6mm

BFP840FESD

Figure 31 Layout Proposal for RF Grounding of the 3.4 – 3.8 GHz LNA with BFP840FESD

Figure 32 PCB Layer Information

Copper

35µm

FR4 Core, 0.2 mm

FR4 Prepreg,

0.8 mm

Vias

BFP840FESD

Low Noise Amplifier for 3.4GHz- 3.8GHz Authors


4 Authors

Shamsuddin Ahmed, Application Engineer of Business Unit “RF and Protection Devices” Fang Jie, Application Engineer of Business Unit “RF and Protection Devices”

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG TR1129

BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz (Band 42 ...

Documents

Transcript of BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz (Band 42 ...