BFP196WN - Infineon Technologies

BFP196WNLow noise silicon bipolar RF transistor

Product description• NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion

wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components andcombines ease-of-use to stable volumes production, at benchmark quality and reliability.

Features

• For high voltage applications VCE < 12 V• Maximal power Ptot = 700 mW• Transition frequency fT = 7.5 GHz• Noise figure NFmin = 1.3 dB at 900 MHz• Easy to use Pb-free (RoHS compliant) and halogen-free industry

standard SOT343 package with visible leads 2

3

1, 4

Application• GNSS active antenna• Amplifiers in antenna and telecommunications systems• CATV• Power amplifier for DECT and PCN systems

Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22

Device informationAttention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Type / Ordering code Package Pin configuration Marking Related LinksBFP196WN /BFP196WNH6327XTSA1

SOT343 1=E 2=C 3=B 4=E RLs see SOT343 Package

Preliminary datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.0www.infineon.com 2017-01-20

https://www.infineon.com

Table of contents

Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.1 DC parameter table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.2 AC parameter tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.3 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.4 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4 SOT343 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19


Table of contents

Preliminary datasheet 2 Revision 1.02017-01-20

1 Absolute maximum ratings

Table 1 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)

Parameter Symbol Values Unit Note or Test conditionMin. Max.

Collector emitter voltage VCEO – 12 V Base open

Collector emitter voltage VCES – 20 V Emitter / base short circuited

Collector base voltage VCBO – 20 V Emitter open

Emitter base voltage VEBO – 2 V Collector open

DC collector current IC – 150 mA –

DC base current IB – 15 mA –

Total power Ptot – 700 mW –

Junction temperature TJ – 150 °C –

Storage temperature TStg -55 150 °C –

Attention: Stresses above the maximum values listed here may cause permanent damage to the device.Exposure to absolute maximum rating conditions for extended periods may affect devicereliability. Maximum ratings are absolute ratings. Exceeding only one of these values may causeirreversible damage to the component.


Absolute maximum ratings


2 Thermal characteristics

Table 2 Thermal resistance

Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max.

Junction - soldering point RthJS – 115 – K/W 1)

Figure 1 Absolute maximum power dissipation Ptot vs. Ts

Note: In the horizontal part of the above curve the junction temperature TJ is lower than TJ,max. In thedeclining slope it is TJ = TJ,max. Ptot has to be reduced according to the curve in order not to exceedTJ,max. It is TJ,max = TS + Ptot * RTHJS.

1 For the definition of RthJS please refer to the application note AN077


Thermal characteristics


3 Electrical performance in test fixture

3.1 DC parameter table

Table 3 DC characteristics at TA = 25 °C

Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max.

Collector emitter breakdown voltage VCEO 12 – – V IC = 1 mA, open base

Collector emitter leakage current ICES – – 100 μA VCE = 20 V, VBE = 0 VEmitter / base shortcircuited

Collector base leakage current ICBO – – 100 nA VCB = 10 V, VBE = 0Open emitter

Emitter base leakage current IEBO – – 1 μA VEB = 1 V, IC = 0Open collector

DC current gain hFE 70 100 140 VCE = 8 V, IC = 50 mAPulse measured

3.2 AC parameter tables

Table 4 General AC characteristics at TA = 25 °C

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Transition frequency fT 5 7.5 – GHz VCE = 8 V, IC = 90 mA,f=500 MHz

Collector base capacitance CCB – 0.9 – pF VCB = 10 V, VBE = 0 V,f = 1 MHzEmitter grounded

Collector emitter capacitance CCE – 0.35 – pF VCE = 10 V, VBE = 0 V,f = 1 MHzBase grounded

Emitter base capacitance CEB – 3.8 – pF VEB = 0.5 V, VCB = 0 V,f = 1 MHzCollector grounded


Electrical performance in test fixture


Measurement setup for the AC characteristics shown in the following tables is a test fixture with Bias T’s in a 50Ω system, TA = 25 °C.

Bias-T

GND

RFOUT

VCE

14

3 2Bias-TRFIN

VBE

Figure 2 BFP196WN testing circuit

Table 5 AC characteristics, VCE = 8 V, f = 0.45 GHz


Power gainMaximum power gainTransducer gain

Gms|S21|2

––

23.519.0

––

dB IC = 50 mAZs = ZSopt, ZL = ZLoptZS=ZL=50 Ω

Minimum noise figure NFmin – 0.95 – dB IC = 20 mA, ZS = ZSopt

Linearity1 dB compression point at output3rd order intercept point at output

OP1dBOIP3

––

1932

––

dBm IC = 50 mAZS=ZL=50 Ω




Gms|S21|2

––

17.013.0

––




OP1dBOIP3

––

1932

––








Gms|S21|2

––

12.58.5

––




OP1dBOIP3

––

1932

––


Table 8 AC characteristics, VCE = 8 V, f =1.9 GHz



Gms|S21|2

––

116.5

––




OP1dBOIP3

––

1932

––





Gms|S21|2

––

9.74.8

––




OP1dBOIP3

––

1932

––





3.3 Characteristic DC diagrams

0 2 4 6 8 10VCE [V]

0

20

40

60

80

100

120

I C [m

A]

IB=85 µA

IB=171 µA

IB=256 µA

IB=341 µA

IB=427 µA

IB=682 µA

IB=597 µA

IB=768 µA

IB=512 µA

IB=853 µA

Figure 3 Collector current IC = f(VCE), IB = parameter

0 0.02 0.04 0.06 0.08 0.1IC [A]

80

90

100

110

120

130

140

hfe

Figure 4 Current gain hFE= f(IC), VCE = 8 V




0.5 0.55 0.6 0.65 0.7 0.75 0.8VBE [V]

10-7

10-6

10-5

10-4

10-3

10-2

10-1I C

[A]

Figure 5 Collector current IC= f(VBE), VCE = 8 V

0.5 0.55 0.6 0.65 0.7 0.75 0.8VBE [V]

10-9

10-8

10-7

10-6

10-5

10-4

10-3

I B [A

]

Figure 6 Base current IB = f(VBE), VCE = 8 V




0 0.5 1 1.5 2VEB [V]

10-14

10-13

10-12

10-11

10-10

10-9I B

[A]

Figure 7 Base/emitter leakage current IB = f(VEB), VCE = 8 V

Note: Regard absolute maximum ratings for IC , VCE and Ptot (see Table 1)




3.4 Characteristic AC diagrams

0 20 40 60 80 100 120 140 160 180IC [mA]

0

1

2

3

4

5

6

7

8f T [G

Hz]

8V

5V

4V3V

2V

1V

Figure 8 Transition frequency fT = f(IC), VCE = parameter

0 1 2 3 4 5 6 7f [GHz]

0

5

10

15

20

25

30

Gai

n [d

B]

Gms

Gma

|S21|2

Figure 9 Gain Gms, Gma, IS21I2 = f(f), IC = 50 mA, VCE = 8 V




0 20 40 60 80 100IC [mA]

0

5

10

15

20

25

30

35G

ma

[dB]

0.15GHz

0.45GHz

0.90GHz

1.50GHz 1.90GHz 2.40GHz

3.50GHz

Figure 10 Maximum power gain Gmax = f(IC), VCE = 8 V, f = parameter

0 2 4 6 8 10 12 14 16VCE [V]

0

5

10

15

20

25

30

35

Gm

a [d

B]

0.15GHz

0.45GHz

0.90GHz

1.50GHz

2.40GHz 1.90GHz

3.50GHz

Figure 11 Maximum power gain Gmax = f(VCE), IC = 50 mA, f = parameter




10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

-1

1.5

-1.5

2

-2

3

-3

4

-4

5

-5

10

-10

0.5

-0.5

0.1

-0.1

0.2

-0.2

0.3

-0.3

0.4

-0.4

5.0

1.02.0

3.05.0

0.013.0

4.0

0.01

6.0

2.01.0

0.01 to 6 GHz

4.0

6.0

20mA50mA

Figure 12 Output reflection coefficient S22 = f(f) at VCE = 8 V, IC = 20, 50 mA

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

-1

1.5

-1.5

2

-2

3

-3

4

-4

5

-5

10

-10

0.5

-0.5

0.1

-0.1

0.2

-0.2

0.3

-0.3

0.4

-0.4

5.0

1.0

2.0

3.0

5.0

0.01

3.0

4.0

0.01

6.0

2.0

1.0

0.01 to 6 GHz

4.0

6.0

20mA50mA

Figure 13 Input reflection coefficient S11 = f(f) at VCE = 8 V, IC = 20, 50 mA




10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.45 to 2.4 GHz

0.450.9

1.5

1.9

2.4

0.45

0.9

1.5

1.92.4

20mA50mA

Figure 14 Source impedance for minimum noise figure ZSopt = f(f), VCE = 8 V, IC = 20, 50 mA

0 0.5 1 1.5 2 2.5f [GHz]

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

NF m

in [d

B]

20mA

50mA

Figure 15 Noise figure NFmin = f(f), VCE = 8 V, IC = 20, 50mA, ZS = ZSopt




0 20 40 60 80 100IC [mA]

0

0.5

1

1.5

2

2.5

3

3.5N

F min

[dB]

0.45GHz0.9GHz

1.9GHz

1.5GHz

2.4GHz

Figure 16 Noise figure NFmin = f(IC), VCE = 8 V, f = parameter, ZS = ZSopt

0 0.5 1 1.5 2 2.5f [GHz]

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

NF5

0 [d

B]

20mA

50mA

Figure 17 Noise figure NF50 = f(f), VCE = 8 V, IC = 20, 50 mA, ZS = 50 Ω




0 20 40 60 80 100IC [mA]

0

1

2

3

4

5

6

7N

F50

[dB]

0.45GHz0.9GHz

1.9GHz

1.5GHz

2.4GHz

Figure 18 Noise figure NF50 = f(IC), VCE = 8 V, f = parameter, ZS = 50 Ω

Note: The curves shown in this chapter Characteristic AC diagrams have been generated using typicaldevices but shall not be understood as a guarantee that all devices have identical characteristiccurves. TA = 25 °C.




4 SOT343 Package

SOT343-PO V08

1.25

±0.1

0.1 MAX.

2.1±

0.1

0.15 +0.1-0.050.3 +0.1

2 ±0.2±0.10.9

3

2

4

1

A

+0.10.6AM0.2

1.3

-0.05

-0.05

0.15

0.1 M4x

0.1

0.1

MIN

.

Figure 19 SOT343 package outline (dimension in mm)

0.6

SOT343-FP V08

0.8

1.6

1.15

0.9

Soldering Type: Reflow Soldering

Figure 20 SOT343 footprint (dimension in mm)

2005, JuneDate code (YM)

BGA420Type codePin 1

Manufacturer

Figure 21 SOT343 marking layout

SOT323-TP V02

0.24

2.15

82.

3

1.1Pin 1

Reel ø180 mm: 3.000 Pieces/ReelReels/Box: 1 x 3.000 = 3.000

Reel ø330 mm: 10.000 Pieces/ReelReels/Box: 1 x 10.000 = 10.000

Figure 22 SOT343 standard packing (dimension in mm)


SOT343 Package


Revision historyMajor changes since previous revision

Reference DescriptionRevision History: 2016-12-21, Revision 0.9

rev 0.9 Preliminary datasheet


Revision history


Trademarks of Infineon Technologies AGµHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™,DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™,HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™,PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™,SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™.

Trademarks Update 2015-12-22

Other TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2017-01-20Published byInfineon Technologies AG81726 Munich, Germany © 2017 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-kst1478698311373

IMPORTANT NOTICEThe information given in this document shall in noevent be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”) .With respect to any examples, hints or any typical valuesstated herein and/or any information regarding theapplication of the product, Infineon Technologieshereby disclaims any and all warranties and liabilities ofany kind, including without limitation warranties ofnon-infringement of intellectual property rights of anythird party.In addition, any information given in this document issubject to customer’s compliance with its obligationsstated in this document and any applicable legalrequirements, norms and standards concerningcustomer’s products and any use of the product ofInfineon Technologies in customer’s applications.The data contained in this document is exclusivelyintended for technically trained staff. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the productinformation given in this document with respect to suchapplication.

WARNINGSDue to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest InfineonTechnologies office.Except as otherwise explicitly approved by InfineonTechnologies in a written document signed byauthorized representatives of Infineon Technologies,Infineon Technologies’ products may not be used inany applications where a failure of the product orany consequences of the use thereof can reasonablybe expected to result in personal injury

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BFP196WN - Infineon Technologies

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