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NPN Silicon AF Transistors BC 635 BC 639

Type Ordering CodeMarking Package1)Pin Configuration

BC 635BC 637BC 639

Q68000-A3360Q68000-A2285Q68000-A3361

TO-92E C B

1 2 3

If desired, selected transistors, type BC 63 5 10 (hFE = 63 160), or BC 63 5 16(hFE = 100 250) are available. Ordering codes upon request.

q High current gain

q High collector current

q Low collector-emitter saturation voltage

q Complementary types: BC 636, BC 638,BC 640 (PNP)

1

23

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Maximum Ratings

Parameter Values Unit

Collector-emitter voltage V

Peak collector current

Collector current A

Junction temperature C

Total power dissipation, TC = 90 C1) W

Storage temperature range

Collector-base voltage

Thermal Resistance

Junction - ambient1) 156 K/W

60

1

1.5

0.8 (1)

150

65 + 150

Emitter-base voltage

Base current mA100

Junction - case2) 75

45 80

6045 100

BC 637BC 635 BC 639

5

Peak base current 200

Symbol

VCE0

ICM

IC

Tj

Ptot

Tstg

VCB0

Rth JA

VEB0

IB

Rth JC

IBM

1) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm 10 mm large copper areaf th ll t t i l R 125 K/W d th P 1 W t T 25 C

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Electrical Characteristicsat TA = 25 C, unless otherwise specified.

DC current gainIC = 5 mA; VCE = 2 VIC = 150 mA; VCE = 2 V1)

IC = 500 mA; VCE = 2 V1)

VCollector-emitter breakdown voltageIC = 10 mA

BC 635BC 637BC 639

V(BR)CE0

456080

nA

A

Collector cutoff currentVCB = 30 V

VCB = 30 V, TA = 150 C

ICB0

100

20

UnitValuesParameter Symbol

min. typ. max.

DC characteristics

Collector-base breakdown voltageIC = 100 A

BC 635BC 637BC 639

V(BR)CB0

4560100

Emitter-base breakdown voltageIE = 10 A

V(BR)EB0 5

mVCollector-emitter saturation voltage1)

IC = 500 mA; IB = 50 mAVCEsat 500

hFE254025

250

VBase-emitter voltage1)IC = 500 mA; VCE = 2 V

VBE) 1

nAEmitter cutoff currentVEB = 4 V

IEB0 100

AC characteristics

MHzTransition frequencyIC = 50 mA, VCE = 10 V, f= 20 MHz

fT 100

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Total power dissipation Ptot = f (TA; TC)

Permissible pulse load RthJA = f (tp)VCE = 2 V

Collector cutoff current ICB0 = f (TA)VCB = 30 V

Collector current IC = f (VBE)

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DC current gain hFE = f (IC)VCE = 2 V

Transition frequency fT = f(IC)VCE = 10 V, f= 20 MHz

Collector-emitter saturation voltageVCEsat = f (IC)

hFE = 10

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