BC546/547/548/549/550 Transistor data sheet

4
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC546/547/548/549/550 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25°C unless otherwise noted Electrical Characteristics T a =25°C unless otherwise noted h FE Classification Symbol Parameter Value Units V CBO Collector-Base Voltage : BC546 : BC547/550 : BC548/549 80 50 30 V V V V CEO Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549 65 45 30 V V V V EBO Emitter-Base Voltage : BC546/547 : BC548/549/550 6 5 V V I C Collector Current (DC) 100 mA P C Collector Power Dissipation 500 mW T J Junction Temperature 150 °C T STG Storage Temperature -65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units I CBO Collector Cut-off Current V CB =30V, I E =0 15 nA h FE DC Current Gain V CE =5V, I C =2mA 110 800 V CE (sat) Collector-Emitter Saturation Voltage I C =10mA, I B =0.5mA I C =100mA, I B =5mA 90 200 250 600 mV mV V BE (sat) Base-Emitter Saturation Voltage I C =10mA, I B =0.5mA I C =100mA, I B =5mA 700 900 mV mV V BE (on) Base-Emitter On Voltage V CE =5V, I C =2mA V CE =5V, I C =10mA 580 660 700 720 mV mV f T Current Gain Bandwidth Product V CE =5V, I C =10mA, f=100MHz 300 MHz C ob Output Capacitance V CB =10V, I E =0, f=1MHz 3.5 6 pF C ib Input Capacitance V EB =0.5V, I C =0, f=1MHz 9 pF NF Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 V CE =5V, I C =200µA f=1KHz, R G =2KV CE =5V, I C =200µA R G =2K, f=30~15000MHz 2 1.2 1.4 1.4 10 4 4 3 dB dB dB dB Classification A B C h FE 110 ~ 220 200 ~ 450 420 ~ 800 BC546/547/548/549/550 Switching and Applications High Voltage: BC546, V CEO =65V Low Noise: BC549, BC550 Complement to BC556 ... BC560 1. Collector 2. Base 3. Emitter TO-92 1

Transcript of BC546/547/548/549/550 Transistor data sheet

Page 1: BC546/547/548/549/550 Transistor data sheet

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

BC

546/547/548/549/550

NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise noted

Electrical Characteristics Ta=25°C unless otherwise noted

hFE Classification

Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC546

: BC547/550: BC548/549

805030

VVV

VCEO Collector-Emitter Voltage : BC546 : BC547/550: BC548/549

654530

VVV

VEBO Emitter-Base Voltage : BC546/547: BC548/549/550

65

VV

IC Collector Current (DC) 100 mAPC Collector Power Dissipation 500 mWTJ Junction Temperature 150 °CTSTG Storage Temperature -65 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. UnitsICBO Collector Cut-off Current VCB=30V, IE=0 15 nAhFE DC Current Gain VCE=5V, IC=2mA 110 800VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA

IC=100mA, IB=5mA90

200250600

mVmV

VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mAIC=100mA, IB=5mA

700900

mVmV

VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mAVCE=5V, IC=10mA

580 660 700720

mVmV

fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHzCob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pFCib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pFNF Noise Figure : BC546/547/548

: BC549/550: BC549: BC550

VCE=5V, IC=200µAf=1KHz, RG=2KΩVCE=5V, IC=200µARG=2KΩ, f=30~15000MHz

21.21.41.4

10443

dBdBdBdB

Classification A B ChFE 110 ~ 220 200 ~ 450 420 ~ 800

BC546/547/548/549/550

Switching and Applications• High Voltage: BC546, VCEO=65V• Low Noise: BC549, BC550• Complement to BC556 ... BC560

1. Collector 2. Base 3. Emitter

TO-921

Page 2: BC546/547/548/549/550 Transistor data sheet

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

BC

546/547/548/549/550Typical Characteristics

Figure 1. Static Characteristic Figure 2. Transfer Characteristic

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage

Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product

0 2 4 6 8 10 12 14 16 18 200

20

40

60

80

100

IB = 50µA

IB = 100µA

IB = 150µA

IB = 200µA

IB = 250µA

IB = 300µAIB = 350µA

IB = 400µA

I C[m

A], C

OLL

ECTO

R C

UR

REN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

0.0 0.2 0.4 0.6 0.8 1.0 1.20.1

1

10

100

VCE = 5V

I C[m

A], C

OLL

ECTO

R C

UR

REN

T

VBE[V], BASE-EMITTER VOLTAGE

1 10 100 10001

10

100

1000

VCE = 5V

h FE,

DC

CU

RR

ENT

GAI

N

IC[mA], COLLECTOR CURRENT

1 10 100 100010

100

1000

10000

IC = 10 IB

VCE(sat)

VBE(sat)

V B

E(sa

t), V

CE(

sat)[

mV]

, SAT

UR

ATIO

N V

OLT

AGE

IC[A], COLLECTOR CURRENT

1 10 100 10000.1

1

10

100

f=1MHzIE = 0

Cob

[pF]

, CAP

AC

ITAN

CE

VCB[V], COLLECTOR-BASE VOLTAGE

0.1 1 10 1001

10

100

1000

VCE = 5V

f T, C

UR

RE

NT

GAI

N-B

AN

DW

IDTH

PR

OD

UC

T

IC[mA], COLLECTOR CURRENT

Page 3: BC546/547/548/549/550 Transistor data sheet

Package DimensionsB

C546/547/548/549/550

0.46 ±0.10

1.27TYP

(R2.29)

3.86

MA

X

[1.27 ±0.20]

1.27TYP

[1.27 ±0.20]

3.60 ±0.20

14.4

7 ±0

.40

1.02

±0.

10

(0.2

5)4.

58 ±

0.20

4.58+0.25–0.15

0.38+0.10–0.05

0.38

+0.1

0–0

.05

TO-92

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

Page 4: BC546/547/548/549/550 Transistor data sheet

©2002 Fairchild Semiconductor Corporation Rev. I1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

FACT™FACT Quiet series™FAST®

FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™

ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®

OPTOPLANAR™

PACMAN™POP™Power247™PowerTrench®

QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER®

SMART START™

SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET®

VCX™

ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™